CN105675051B - The method of manufacturing a sensor integrated circuit and an integrated circuit using the method of producing - Google Patents

The method of manufacturing a sensor integrated circuit and an integrated circuit using the method of producing Download PDF

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CN105675051B
CN105675051B CN201610018737.5A CN201610018737A CN105675051B CN 105675051 B CN105675051 B CN 105675051B CN 201610018737 A CN201610018737 A CN 201610018737A CN 105675051 B CN105675051 B CN 105675051B
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integrated circuit
sensor
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CN105675051A (en
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赖建文
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上海申矽凌微电子科技有限公司
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Abstract

本发明提供的种制造传感器集成电路的方法及使用该方法制造的集成电路,包括如下步骤:步骤1,在第衬底硅片上制造温湿度传感器集成电路,在第衬底硅片上制造与温湿度传感器集成电路连接的第金属铝布线;步骤2,在第衬底硅片上制造第二衬底硅片,在第二衬底硅片上制造红外光和可见光亮度传感器,在第二衬底硅片面向第衬底硅片的侧设有与红外光和可见光亮度传感器连接的第二金属铝布线;步骤3,连接红外光和可见光亮度传感器与温湿度传感器集成电路;步骤4,封装。 A method of fabricating an integrated circuit sensor according to the present invention provides a method for producing and using the integrated circuit, comprising the following steps: Step 1, the temperature and humidity sensor producing a first integrated circuit on a silicon wafer substrate, silicon wafer fabricated on the first substrate and the first aluminum wiring metal temperature and humidity sensors connected to the integrated circuit; step 2, for producing a second silicon wafer substrate on the first silicon wafer substrate, for producing visible light and infrared light sensor on the second substrate wafer, the second substrate facing the bottom side of the silicon wafer substrate provided with a second aluminum wiring connected with the infrared and visible light illuminance sensor; step 3, infrared and visible light luminance sensor connected with the temperature and humidity sensor integrated circuit; step 4, the package. 本发明的有益效果如下:可将温度、湿度传感器以及红外光和可见光亮度传感器集合制造在起,成为个单器件,减少体积,功耗和制造成本,提高测量的精度。 Advantageous effects of the present invention are as follows: temperature, humidity, light and visible light sensor and an infrared light sensor may be manufactured from a collection, become single device, thereby reducing size, power consumption and manufacturing cost, improve the measurement accuracy.

Description

制造传感器集成电路的方法及使用该方法制造的集成电路 The method of manufacturing a sensor integrated circuit and an integrated circuit using the method of producing

技术领域 FIELD

[0001] 本发明涉及一种制造传感器集成电路的方法,特别是一种温度、湿度和光学传感器同时制造成单一集成电路的方法及使用该方法制造的集成电路。 [0001] The present invention relates to a method of manufacturing an integrated circuit sensor, in particular a temperature, humidity, and simultaneously the optical sensor fabricated as a single integrated circuit and a method of using an integrated circuit manufactured by the method.

背景技术 Background technique

[0002] 温度传感器集成电路和湿度传感器集成电路己经分别存在多时,单独的红外光和可见光亮度传感器集成电路也有存在。 [0002] The temperature sensor and a humidity sensor integrated circuit IC are already exists for a long time, a separate infrared and visible light luminance sensor integrated circuit also exist. 它们的制造方法也分别有相关专利申报或授予。 Methods for their manufacture are also related patent application or grant. 但是,当需要同时测量温湿度以及红外光和可见光亮度时,人们通常使用将上述几种集成电路集合在一个电路板的系统上实现,因此体积大,成本高,功耗大。 However, when the need to measure the temperature and humidity as well as infrared and visible light luminance, it is generally used in the above-described set of several integrated circuits on a circuit board of the system implemented, and therefore bulky, high cost, high power consumption. 本专利发明一种将温湿度以及红外光和可见光亮度传感器同时集合在一起的制造方法,使得温湿度以及红外光和可见光亮度传感器成为一个单一产品,可以同时测量温度,湿度以及红外光和可见光亮度, 减少器件的体积,功耗和制造成本。 A patent of the present invention the temperature and humidity sensor and the infrared and visible light luminance while producing method set together, such that the temperature and humidity sensor and the infrared and visible light brightness as a single product, can simultaneously measure temperature, humidity, and infrared and visible light luminance reduce device size, power consumption and manufacturing costs. 同时,因为温湿度以及红外光和可见光亮度的测量灵敏度互相关联,所以当同步得到温湿度以及红外光和可见光的数据时,测量可以得到有效补偿,测量结果更加准确。 Meanwhile, since the temperature and humidity associated with the measurement of visible light and infrared light and the brightness of each of the sensitivity, when the synchronization is temperature and humidity data as well as infrared and visible light, the measurement can be effectively compensated, more accurate measurement results.

[0003] 温度、湿度和光亮度作为最基本的物理参数,与人们的生活和工作环境的舒适度息息相关。 [0003] temperature, humidity, and luminance as the basic physical parameters closely related to the comfort of people's living and working environment. 近几年来,随着可穿戴设备市场的发展,人们希望这些可穿戴设备可以测量环境的温度湿度和光亮度。 In recent years, with the development of the wearable device market, it is desirable to measure these wearable device brightness and temperature and humidity environments. 比如,实时测量温湿度可以使得用户体验环境的舒适度,从而判断出行计划。 For example, real-time measurement of temperature and humidity can make the comfort of the user experience in order to determine travel plans. 又比如,仪器设备的屏幕显示亮度,可以根据实时的环境光亮度来自动调节,使得人体对屏幕的亮度感觉更为舒适。 As another example, the screen of the equipment display brightness can be automatically adjusted according to real-time ambient light, making the body of the brightness of the screen feel more comfortable. 再比如,红外光传感器可以检测人体反射回来的红外光信号,从而判断设备与人体的距离。 As another example, infrared light sensors can detect infrared light signals reflected back body, so that the distance determination device and the human body. 但是,现在的温湿度传感器和红外光以及可见光亮度传感器不能集成一起,使得在应用中只能采用两个或三个集成电路,因此设备体积较大,功耗多,成本高。 However, the present temperature and humidity sensor and the infrared light and the visible light luminance sensor can not be integrated together, so that the application can only use two or three integrated circuits, so bulky equipment, power consumption, high cost. 因此,可穿戴设备需要一种可以满足体积,功耗和成本要求的产品和制造方法。 Thus, a need for a wearable device and a method of manufacturing the product size, power and cost requirements to meet.

[0004] 比如申请号201310117713.1的专利申请,是关于一个单独制造湿度传感器集成电路的方法。 [0004] Application No. 201310117713.1 such patent application, relates to a method for producing a moisture sensor separate integrated circuit.

[0005] 又比如申请号2〇151〇6〇8600的专利申请,是关于一个同时测量温度和湿度的温湿度传感器的制造方法。 [0005] Another example application No. 2〇151〇6〇8600 patent application, a method of manufacturing a humidity sensor temperature and simultaneous measurement of temperature and humidity.

[0006] 又比如申请号2〇141〇351826.2的专利申请,是关于红外光测量传感器的集成电路制造方法。 [0006] Another example of the application No. 2〇141〇351826.2 patent application, a method of manufacturing an integrated circuit on the infrared light measuring sensor.

[0007] 本专利是关于温度,湿度传感器以及红外光和可见光亮度传感器等不同的传感器集成在单一封装上的制造方法。 [0007] This patent is about the manufacturing method different from the temperature sensor, a humidity sensor, and infrared and visible light sensors integrated luminance in a single package.

发明内容 SUMMARY

[0008] 针对现有技术中的缺陷,本发明的目的是提供一种将温度、湿度传感器以及红外光和可见光亮度传感器等不同的传感器集成在单一封装上的制造传感器集成电路的方法及使用该方法制造的集成电路。 [0008] For the prior art drawbacks, an object of the present invention is to provide a method different temperature sensors, humidity sensors, and infrared and visible light luminance sensor integrated on a single IC package manufacture and use of the sensor the method for manufacturing integrated circuits.

[0009] 为解决上述技术问题,本发明提供一种制造传感器集成电路的方法,包括如下步骤: [0009] To solve the above problems, the present invention provides a method of manufacturing a sensor integrated circuit, comprising the steps of:

[0010]步骤1,在第一衬底硅片上制造温湿度传感器集成电路,在所述第一衬底硅片上制造与所述温湿度传感器集成电路连接的第一金属铝布线; [0010] Step 1, the temperature and humidity sensor integrated circuit for producing on a first silicon wafer substrate, for producing a first aluminum wire connected to the temperature-humidity sensor integrated circuit on the first silicon wafer substrate;

[0011]步骤2,在所述第一衬底硅片上制造第二衬底硅片,在所述第二衬底硅片上制造红外光和可见光亮度传感器,在所述第二衬底硅片面向所述第一衬底硅片的一侧设有与所述红外光和可见光亮度传感器连接的第二金属铝布线; [0011] Step 2, in fabricating a second silicon wafer substrate on the first substrate wafer, infrared and visible light producing a luminance sensor on the second substrate wafer, the second silicon substrate sheet facing side of the first silicon wafer substrate provided with a second aluminum wiring connected with the brightness of infrared and visible light sensors;

[0012]步骤3,连接所述红外光和可见光亮度传感器与所述温湿度传感器集成电路; [0012] Step 3, connecting the infrared and visible light sensor and the brightness of the temperature and humidity sensor integrated circuit;

[0013] 步骤4,封装。 [0013] Step 4, the package.

[0014] 优选地,所述步骤2包括: [0014] Preferably, the step 2 comprises:

[0015]步骤2.1,在所述第二衬底硅片内通过离子注入和高温扩散的方法制造第一二极管、第二二极管、第三二极管、第四二极管及第五二极管; [0015] Step 2.1, in the second silicon wafer substrate by the method for producing a high temperature ion implantation and diffusion of a first diode, a second diode, a third diode, a fourth diode and the second five diodes;

[0016]步骤2.2,在所述第二衬底硅片的表面通过等离子体增强化学气相沉积法淀积第一'电隔尚层; [0016] Step 2.2, depositing a first 'layer is still electrically separated surface of the second substrate wafer by enhanced plasma chemical vapor deposition;

[0017]步骤2.3,在所述第一电隔离层上通过光刻和干法刻蚀方法刻出第一接触孔,所述第一接触孔贯穿所述第一电隔离层; [0017] Step 2.3, on the first electrically isolating layer carve a first contact hole by photolithography and dry etching method, the first contact hole through the first electrically isolating layer;

[0018]步骤2 • 4,在所述第一接触孔内通过化学气相沉积法沉积金属钨,所述金属钨与所述第一二极管、所述第二二极管、所述第三二极管、所述第四二极管及所述第五二极管连接; [0018] Step 2 • 4, in the first contact hole by depositing a metal chemical vapor deposition of tungsten, a tungsten metal and the first diode, the second diode, the third diode, the fourth diode and the fifth diode-connected;

[0019]步骤2.5,在所述第一电隔离层上通过物理气相沉积法溅射金属铝连线,所述金属铝连线与所述金属钨连接; [0019] Step 2.5, by sputtering physical vapor deposition of aluminum metal on said first wiring layer is electrically isolated from the wires connected to the aluminum metal tungsten;

[0020]步骤2.6,在所述第一电隔离层上通过涂布和光刻的方法设置红光过滤薄膜,所述红光过滤薄膜的位置与所述第三二极管对应; [0020] Step 2.6, corresponding to the third diode on the first electrically isolating layer disposed position red filter membrane, said red filter membrane by the method of coating and lithography;

[0021]步骤2.7,在所述第一电隔离层上通过涂布和光刻的方法设置黄光过滤薄膜,所述黄光过滤薄膜的位置与所述第二二极管对应; [0021] Step 2.7, corresponding to said second diodes in said first position electrically isolating layer disposed yellow filter membrane, the filter membrane by the method of the yellow coating and lithography;

[0022]步骤2.8,在所述第一电隔离层上通过涂布和光刻的方法设置蓝光过滤薄膜,所述蓝光过滤薄膜的位置与所述第一二极管对应; [0022] Step 2.8, on the first electrically isolating layer blue filter film is provided by coating and photolithography methods, the position corresponding to the blue filter membrane and the first diode;

[0023]步骤2.9,在所述第一电隔离层上通过等离子体增强化学气相沉积法淀积第二电隔离层,所述第二电隔离层包裹所述金属铝连线、所述红光过滤薄膜、所述黄光过滤薄膜及所述蓝光过滤薄膜; [0023] Step 2.9, on the first electrically isolating layer by plasma enhanced chemical vapor deposition method of depositing a second electrically isolating layer, said second layer of electrically isolating the wrapped metallic aluminum wires, said red filtration membrane, the yellow light and the blue filter membrane filter membrane;

[0024]步骤2.10,在所述第二电隔离层上通过物理气相沉积法溅射和光刻的方法设置红外光吸收薄膜,所述红外光吸收薄膜的位置与所述第一二极管、所述第二二极管、所述第三二极管及所述第四二极管对应; [0024] Step 2.10, on the second electrically isolating layer is provided by an infrared method of physical vapor deposition sputtering and photolithography light absorption film, the infrared light absorbing film and the position of the first diode, said second diode, the third diode and the fourth diode corresponds;

[0025]步骤2.11,在所述第二电隔离层上淀积介质层,所述介质层包裹所述红外光吸收薄膜。 [0025] Step 2.11, depositing a dielectric layer on said second electrically isolating layer, said dielectric layer wrapping the infrared light absorbing film.

[0026]优选地,所述第一电隔离层及所述第二电隔离层的厚度为1微米。 Thickness [0026] Preferably, the first electrically isolating layer and the second electrically isolating layer is 1 micron.

[0027]优选地,所述第一电隔离层及所述第二电隔离层的材质为二氧化硅。 [0027] Preferably, the first electrically isolating layer and the electrically isolating material of the second layer is silica.

[0028] 优选地,所述红光过滤薄膜的厚度为0.5微米〜1.0微米,所述红光过滤薄膜允许光谱波长为610纳米〜760纳米的红光通过; [0028] Preferably, said red filter film thickness of 0.5 m ~1.0 microns, the filter membrane allows red spectrum having a wavelength of 610 nanometers ~760 nm red light through;

[0029]所述黄光过滤薄膜的厚度为0.5微米〜1.0微米,所述黄光过滤薄膜允许光谱波长为490纳米〜570纳米的黄光通过; Thickness [0029] The yellow filter membrane of 0.5 micron ~1.0 microns, the filter membrane allows yellow light having a wavelength of 490 nanometers spectral ~570 nm by yellow;

[0030]所述蓝光过滤薄膜的厚度为0.5微米〜1.0微米,所述蓝光过滤薄膜允许光谱波长为450纳米〜480纳米的蓝光通过。 [0030] The blue filter membrane thickness of 0.5 microns ~1.0 microns filter membrane allows the blue light spectrum having a wavelength of 450 nm ~480 nm blue light.

[0031] 优选地,所述红外光吸收薄膜吸收波长为760纳米〜30000纳米的红外光频谱的光束。 [0031] Preferably, the infrared light absorbing film absorption spectrum light beam having a wavelength of 760 nanometers ~30000 nm infrared.

[0032] 优选地,所述步骤3包括: [0032] Preferably, the step 3 comprises:

[0033]步骤3.1,在所述第二衬底硅片上设置通孔,所述通孔贯穿所述第一电隔离层和所述第二衬底鞋片; [0033] Step 3.1, a through hole is provided on the second silicon substrate, the through hole through the first electrically isolating layer and the second substrate sheet shoe;

[0034]步骤3.2,在所述通孔内填充金属铜,所述金属铜的两端分别与所述金属铝连线及所述第二金属铝布线连接; [0034] Step 3.2, the through hole is filled in the metallic copper, the copper metal at both ends respectively connected to the aluminum wiring metal and the second metal aluminum wiring;

[0035]步骤3 • 3,在所述第一衬底硅片上涂布聚希亚胺层,所述聚希亚胺层包裹所述第一金属铝布线,在所述聚希亚胺层上设有第二接触孔,在所述第二接触孔内设置所述金属球; [0036]步骤3.4,通过所述金属球连接所述第一金属铝布线及所述第二金属铝布线。 [0035] Step 3 • 3, on the first silicon wafer substrate coated with polyethylene amines Mejia layer, wrapping the layer of polyethylene amine Mejia aluminum wiring of the first metal, the layer of polyethylene amine Mejia is provided on the second contact hole, the second contact hole disposed in said metal balls; [0036] step 3.4, the aluminum wiring connecting the first metal and the second metal by the aluminum wiring metal ball.

[0037]优选地,所述介质层的厚度为1.0微米[0038] 优选地,所述第二衬底硅片的厚度为100微米。 [0037] Preferably, the thickness of the dielectric layer is 1.0 [mu] m [0038] Preferably, the thickness of the second silicon wafer substrate 100 micrometers.

[0039]集成电路,所述集成电路采用制造传感器集成电路的方法制造。 [0039] integrated circuit manufacturing method of manufacturing an integrated circuit sensor.

[0040]与现有技术相比,本发明的有益效果如下: [0040] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0041] 1)可将温度、湿度传感器以及红外光和可见光亮度传感器集合制造在一起,成为一个单一器件,减少体积,功耗和制造成本,提高测量的精度;体积小:在wafer level层次焊接两片硅片,使得其体积可以明显比其它单独使用温湿度传感器以及红外光和可见光传感器系统小;成本低:使用两片硅片分别制造温湿度传感器和红外光和可见光传感器,然后利用TSV衬底通孔的金属焊接技术集成在一起,其成品率可以显著提高,使其成本可以降低;功耗低:可以明显降低传感器的功率消耗;精度高:同时测量温度和湿度,以及红外光和可见光亮度,所以可以做温度和湿度的补偿,使得测量湿度,红外光和可见光亮度更加准确; [0041] 1) The temperature and humidity sensors and infrared and visible light producing a luminance sensor set together into a single device, to reduce the size, power consumption and manufacturing cost, improve the measurement accuracy; Small Volume: welded wafer level hierarchy two wafers, such that its volume can be clearly used than other individual temperature and humidity sensor and the infrared and visible light sensor system small; low cost: separately producing a silicon wafer using two temperature and humidity sensors and infrared and visible light sensors, and then using the TSV liner end of the through hole of metal welding technology integrated, which can significantly improve the yield, the cost thereof can be reduced; low power consumption: can significantly reduce power consumption of the sensor; high accuracy: simultaneous measurement of temperature and humidity, as well as infrared and visible light luminance, it is possible to make temperature and humidity compensation, so that the measured humidity, infrared and visible light brightness more accurate;

[0042] 2)虽然三种可见光过滤薄膜可以有效地吸收三种除对应颜色以外的可见光,但一般不能有效吸收红外光,使得红外光可以到达三个对应的可见光光电二极管,引起测量误差和噪声。 [0042] 2) Although three kinds of light filter film can effectively absorb than visible light corresponding to the other three kinds of color, but generally can not effectively absorb infrared light, visible light so that infrared light can reach the three corresponding photodiodes, and measurement error caused by noise . 红外光吸收薄膜的应用可以阻挡红外光谱进入其下面的可见光二极管,从而有效提高可见光的测量精度;在第四二极管上面虽然没有可见光过滤膜,但因为有红外光吸收薄膜,所以第四二极管可以测量除红外光以外的全可见光谱的亮度信号;在第五二极管上面因为既没有可见光过滤薄膜,也没有红外光吸收薄膜,所以第五二极管可以测量包括红外光和可见光在内的全光谱的亮度信号; Infrared light absorbing barrier film can be applied into its infrared spectrum, visible light diode below, so as to effectively improve the measurement accuracy of visible light; although not above a fourth diode light filter film, but because the infrared light absorbing film, the fourth two the diode can be measured luminance signal other than the whole visible spectrum, infrared light; a fifth diode in the above filtration membrane because neither visible nor infrared light absorbing film, the fifth diode may include an infrared light and visible light measured including the full spectrum luminance signal;

[0043] 3)五个光电二极管由于结构位置和光过滤薄膜的不同,可以给出不同的测量信号,通过分析这些信号,可以更精确地测量红外光,可见光的亮度。 [0043] 3) five photodiode light due to the structure and position of the different filter film can be given different measurement signals, and analyzing the signals to be measured more accurately the infrared light, visible light brightness.

附图说明 BRIEF DESCRIPTION

[0044]通过阅读参照以下附图对非限制性实施例所作的详细描述,本发明的其它特征目的和优点将会变得更明显。 [0044] By reading the following detailed description of non-limiting embodiments of the drawings Other features and advantages of the object of the present invention will become more apparent.

[0045]图1为本发明制造传感器集成电路的方法示意图一; Method [0045] FIG. 1 for manufacturing an integrated circuit of the present invention. FIG sensor a;

[0046]图2为本发明制造传感器集成电路的方法示意图二; [0046] FIG. 2 is a schematic view of two sensor integrated circuit manufacturing method of the present invention;

[0047]图3为本发明制造传感器集成电路的方法示意图三; Method [0047] FIG. 3 for manufacturing an integrated circuit of the present invention. FIG sensor III;

[0048]图4为本发明制造传感器集成电路的方法示意图四; [0048] FIG. 4 is a schematic view of four sensor integrated circuit manufacturing method of the present invention;

[0049]图5为本发明制造传感器集成电路的方法示意图五| Method [0049] FIG. 5 for manufacturing an integrated circuit of the present invention. FIG sensor five |

[0050]图6为本发明制造传感器集成电路的方法示意图六; Method [0050] FIG. 6 for manufacturing an integrated circuit of the present invention. FIG sensor six;

[0051 ]图7为本发明制造传感器集成电路的方法示意图七。 Method [0051] FIG. 7 for producing an integrated circuit of the present invention. FIG sensor VII.

[0052]图中: [0052] FIG:

[0053] 1-第一衬底硅片2_第一金属铝布线3_聚希亚胺层 [0053] 1- 2_ first silicon wafer substrate a first metal aluminum wiring layer 3_ polyethylene amine Mejia

[0054] 4-第一衬底娃片5-第一二极管6-第二二极管 [0054] wa first substrate sheet 4- 5- 6- first diode a second diode

[0055] 7-桌二一极管8-第四二极管9-第五二极管 [0055] Table twenty-one diode 7- 8- 9- fifth diode of the fourth diode

[0056] 10-第一电隔呙层11-第一接触孔12-金属错连线 [0056] The first contact hole 11- 10- 12- a first metal layer electrically isolated Guo wrong connection

[0057] 13-金属钨14-红光过滤薄膜15_第二电隔离层 [0057] 13- 14- tungsten film 15_ red filter layer, a second electrically isolating

[0058] 16-黄光过滤薄膜17-蓝光过滤薄膜i8_红外光吸收薄膜 [0058] 16- 17- yellow blue filter membrane filtration membrane i8_ infrared light absorbing film

[0059] 19-介顧20-通孔21_第二金属铝布线 [0059] 19- GU via the through hole 20 of the second aluminum wirings 21_

[0060] 22-金属球 [0060] The metal balls 22-

具体实施方式 Detailed ways

[0061]下面结合具体实施例对本发明进行详细说明。 Specific embodiments of the present invention will be described in detail [0061] below in conjunction. 以下实施例将有助于本领域的技术人员进一步理解本发明,但不以任何形式限制本发明。 The following examples will assist those skilled in the art a further understanding of the invention, but do not limit the present invention in any way. 应当指出的是,对本领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干变化和改进。 It should be noted that one of ordinary skill in the art, without departing from the spirit of the present invention, can make various changes and modifications. 这些都属于本发明的保护范围。 All these fall within the scope of the present invention.

[0062]如图1〜图7所示,本发明制造传感器集成电路的方法,包括如下步骤:在第一衬底硅片1先制造出温湿度传感器集成电路,其最顶层第一金属铝布线2的一部分裸露出来,同时在裸露的金属铝上面涂布聚希亚胺层3,在聚希亚胺层3上面利用光刻方法刻出第二接触孔(图中未示出),再在第二接触孔(图中未示出)内焊接金属球22,为连接到第二衬底硅片4 上的红外光和可见光亮度传感器做准备。 Manufacturing an integrated circuit sensor of the present invention is the method shown in [0062] As shown in FIG. 1 ~ 7, comprising the steps of: a first metal at its topmost silicon aluminum wiring of the first substrate 1 to a temperature and humidity sensor for producing an integrated circuit, expose part 2, while applying polyethylene amine Mejia aluminum top layer 3 exposed by a photolithographic method in the above polyethylene layer 3 Mejia amine carve a second contact hole (not shown), and then in a second contact hole (not shown) are welded metal ball 22, is connected to the second silicon wafer substrate infrared and visible light luminance sensor 4 on the preparation.

[0063]在第二衬底硅片4制造红外光和可见光亮度传感器,具体步骤如下: [0063] In the second silicon wafer substrate 4 for producing visible light and the infrared light sensor, the following steps:

[0064]红外光和可见光亮度传感器的制造从第二衬底硅片4开始。 [0064] Production of infrared and visible light from the second illuminance sensor 4 silicon wafer substrate. 先通过离子注入和高温扩散的方法在第二衬底硅片4上制造五个PN结的第一二极管5、第二二极管6、第三二极7 管、第四二极管8及第五二极管9,形成五个光电转换二极管。 Producing first five PN junction by the method of ion implantation and diffusion at high temperature wafer 4 on the second substrate 5 first diode, the second diode 6, the third diode 7, a fourth diode fifth diode 8 and 9, five photovoltaic diode is formed. 五个PN结二极管作为五种光谱的光电转化器,分别为红光,黄光,蓝光,红外光和全光谱光电转化器。 Five PN junction diode as a photoelectric converter five kinds of spectra, respectively, red, yellow, blue, infrared light, the full spectrum of the photoelectric converter.

[0065]通过PECVD (PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION,等离子体增强化学气相沉积法)工艺淀积一层二氧化硅作为第一电隔离层10,厚度为1微米。 [0065] by PECVD (PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION, plasma enhanced chemical vapor deposition) process, depositing a layer of silicon dioxide as a first electrically isolating layer 10, a thickness of 1 micron.

[0066] 在二氧化硅的第一电隔离层1〇上通过光刻和干法刻蚀方法刻出第一接触孔11。 [0066] 11 on the first electrically isolating layer of silicon dioxide 1〇 carve a first contact hole by photolithography and dry etching method.

[0067]用CVD (CHEMICAL VAPOR DEPOSITION,化学气相沉积法)工艺在第一接触孔11上沉积并填满金属钨13,做为PN结二极管与上层金属铝连线12的连接。 [0067] depositing a metallic tungsten and fill 13, as a PN junction diode 12 is connected to the upper aluminum wiring on the first contact hole 11 by CVD (CHEMICAL VAPOR DEPOSITION, chemical vapor deposition) process.

[0068]用PVD (PHYSICAL VAPOR DEPOSITION,物理气相沉积法)減射的方法在二氧化硅第一电隔离层10的表面淀积金属铝,并通过光刻的方法刻蚀连线,形成金属铝连线12,把五个PN结的十个电极通过第一接触孔丨丨内的金属钨13连接出来。 [0068] with PVD (PHYSICAL VAPOR DEPOSITION, physical vapor deposition) method for reducing emitted in a first electrically isolating layer 10 of silica deposited on the surface of aluminum metal, and the connection by means of photolithography etching to form a metallic aluminum connection 12, the ten electrodes connected to five out through the PN junction of tungsten in the first contact hole 13 Shushu.

[0069] 在二氧化硅第一电隔离层10的表面用涂布和光刻的方法制作红光过滤薄膜14。 [0069] The red filter membrane 14 prepared by the method of coating and lithography of a first surface of the silica layer 10 is electrically isolated. 该薄膜厚度为0 • 5微米〜1. 〇微米,可以让光谱波长为610纳米〜760纳米的红光通过,到达其下面对应的第三二极管7,同时有效的吸收其他波长的可见光。 The film thickness was ~ 1 0 • 5 microns. Square microns, allowing spectral wavelength of 610 nanometers ~760 nm red light to pass through to its corresponding third diode 7 below, while effectively absorb visible light of other wavelengths.

[0070] 在二氧化硅第一电隔离层10的表面用涂布和光刻的方法制作黄光过滤薄膜16。 [0070] Production yellow filter film 16 by photolithography and the method of coating a first surface of the silica layer 10 is electrically isolated. 该薄膜厚度为〇• 5微米〜1.0微米,可以让光谱波长为490纳米〜570纳米的黄光通过,到达其下面对应的第二二极管6,同时有效的吸收其他波长的可见光。 The film thickness of ~1.0 microns square • 5 microns, allows the spectral wavelength of 490 nanometers ~570 nm yellow light to pass through to the underlying corresponding second diode 6, while effectively absorb visible light of other wavelengths.

[0071] 在二氧化硅第一电隔离层10的表面用涂布和光刻的方法制作蓝光过滤薄膜17。 [0071] Production blue filter film 17 by photolithography and the method of coating a first surface of the silica layer 10 is electrically isolated. 该薄膜厚度为〇. 5微米〜1 • 0微米,可以让光谱波长为450纳米〜480纳米的蓝光通过,到达其下面对应的第一二极管5,同时有效的吸收其他波长的可见光。 The film thickness is square. 5 microns ~1 • 0 microns, allowing spectral wavelength of 450 nm ~480 nm blue light to pass through to its corresponding first diode 5 below, while effectively absorb visible light of other wavelengths.

[0072] 通过PECVD (PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION,等离子体增强化学气相沉积法)工艺淀积第二层二氧化硅第二电隔离层15,厚度为1.0微米。 [0072] by PECVD (PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION, plasma enhanced chemical vapor deposition) process, depositing a second silicon dioxide layer a second electrically isolating layer 15, a thickness of 1.0 microns.

[0073] 在这第二电隔离层15上面通过PVD (PHYSICAL VAPOR DEPOSITION,物理气相沉积法)溅射和光刻的方法制作红外光吸收薄膜18。 [0073] In the above that the second electrically isolating layer 15 by a PVD (PHYSICAL VAPOR DEPOSITION, physical vapor deposition) method of the light absorbing film 18 made of sputtering and photolithography infrared. 红外光吸收薄膜18由多层两种不同介电常数的介质交替组成,通过光学干涉的原理使得其可以有效吸收波长为760纳米〜30000纳米的红外光频谱的光束,使其不能到达底层的第一二极管5、第二二极管6、第三二极7管及第四二极管8。 The first infrared light absorbing film 18 is a dielectric permittivity of plurality of alternating layers of two different compositions, by the principle of optical interference so that it can effectively absorb light having a wavelength of 760 nanometers ~30000 nm infrared light spectrum, that it can not reach the bottom of the 5 a diode, the second diode 6, a third diode and a fourth diode 7 8.

[0074] 在红外光吸收薄膜18上面再淀积一层厚度为1.0微米的介质层19,保护红外光吸收薄膜18。 [0074] The above infrared absorbing film 18 and then depositing a dielectric layer 19 is light having a thickness of 1.0 m, the protective film 18 infrared light absorbing.

[0075] 通过背面抛光研磨的方法将第二衬底硅片4减薄到100微米的厚度。 [0075] A second silicon wafer substrate 4 is thinned to a thickness of 100 m by polishing the back grinding method.

[0076] 通过光刻和刻蚀的方法刻蚀出金属铝的TSV衬底通孔20,用PVD的方法在第二衬底硅片4淀积金属铝薄膜,利用光刻和干法刻蚀刻出背面第二金属铝布线21,同时在TSV衬底通孔20内填充金属铜以连接其两端的金属铝连线12和第二金属铝布线21,准备与第一衬底硅片1上的温湿度传感器集成电路的金属球22连接。 [0076] The metallic aluminum etched by photolithography and etching of TSV through hole 20 of the substrate, the PVD method in the second silicon wafer substrate 4 deposited aluminum film by photolithography and dry etching carved the back surface of the second metal aluminum wiring 21, simultaneously filled in the metallic copper substrate TSV vias 20 are connected to both ends of the aluminum wires 12 and a second aluminum wiring 21, on the first substrate to prepare the silicon wafer 1 temperature and humidity sensor 22 is connected to the integrated circuit a metal ball.

[0077] 用金属球22把第一衬底硅片1上的温湿度传感器芯片的第一金属铝布线2和第二衬底硅片4上的外光和可见光亮度传感器的第二金属铝布线21连接起来,再封装在一个集成电路封装内,从而完成这个芯片的制造。 [0077] The metal balls 22 with a first silicon wafer substrate 2, and a first aluminum wiring metal outer and visible light luminance sensor 4 on the second silicon wafer substrate temperature and humidity sensor chip 1 on the second aluminum wirings 21 are connected, and then encapsulated within an integrated circuit package, thereby completing the manufacture of the chip.

[0078] 本发明还提供了一种采用制造传感器集成电路的方法制造的集成电路。 [0078] The present invention further provides an integrated circuit manufactured using the manufacturing method of an integrated circuit sensor.

[0079] 以上对本发明的具体实施例进行了描述。 [0079] The foregoing specific embodiments of the invention have been described. 需要理解的是,本发明并不局限于上述特定实施方式,本领域技术人员可以在权利要求的范围内做出各种变化或修改,这并不影响本发明的实质内容。 Is to be understood that the present invention is not limited to the particular embodiments, those skilled in the art that various changes or modifications may be made within the scope of the appended claims, this does not affect the substance of the present invention. 在不冲突的情况下,本申请的实施例和实施例中的特征可以任意相互组合。 In case of no conflict, the embodiments of the present application features and embodiments may be arbitrarily combined with one another.

Claims (9)

1.一种制造传感器集成电路的方法,其特征在于,包括如下步骤: 步骤1,在第一衬底硅片上制造温湿度传感器集成电路,在所述第一衬底硅片上制造与所述温湿度传感器集成电路连接的第一金属铝布线; 步骤2,在所述第一衬底硅片上制造第二衬底硅片,在所述第二衬底硅片上制造红外光和可见光壳度传感器,在所述第一衬底娃片面向所述第一衬底娃片的一侧设有与所述红外光和可见光亮度传感器连接的第二金属铝布线; 步骤3,连接所述红外光和可见光亮度传感器与所述温湿度传感器集成电路; 步骤4,封装。 A method of manufacturing an integrated circuit sensor, characterized by comprising the following steps: Step 1, the temperature and humidity sensor producing a first integrated circuit on a silicon wafer substrate, is fabricated on the first substrate and the silicon wafer the first aluminum wiring of said temperature and humidity sensors connected to the integrated circuit; step 2, for producing a second silicon wafer substrate on said first substrate, silicon wafer, infrared and visible light producing on the second substrate wafer sensor housing, said first substrate side facing said first sheet Wa Wa sheet substrate provided with a second aluminum wiring connected with the infrared and visible light illuminance sensor; step 3, the connector infrared and visible light sensor and the brightness of the temperature and humidity sensor integrated circuit; step 4, the package.
2. 根据权利要求1所述的制造传感器集成电路的方法,其特征在于,所述步骤2包括: 步骤2 • 1,在所述第二衬底硅片内通过离子注入和高温扩散的方法制造第一二极管、第二二极管、第三二极管、第四二极管及第五二极管; 步骤2 • 2,在所述第二衬底硅片的表面通过等离子体增强化学气相沉积法淀积第一电隔离层; 步骤2 • 3,在所述第一电隔离层上通过光刻和干法刻蚀方法刻出第一接触孔,所述第一接触孔贯穿所述第一电隔离层; 步骤2.4,在所述第一接触孔内通过化学气相沉积法沉积金属钨,所述金属钨与所述第一二极管、所述第二二极管、所述第三二极管、所述第四二极管及所述第五二极管连接; 步骤2 • 5,在所述第一电隔离层上通过物理气相沉积法溅射金属铝连线,所述金属铝连线与所述金属钨连接; 步骤2 • 6,在所述第一电隔离层上 2. The method of manufacturing a sensor integrated circuit as claimed in claim, wherein said step 2 comprises: • a step 2, produced by a method of ion implantation and diffusion of a high temperature in the second silicon wafer substrate a first diode, a second diode, a third diode, the fourth diode and the fifth diode; step 2 • 2, a surface of the second silicon wafer substrate by plasma enhanced CVD deposition of a first electrically isolating layer; step 2 • 3, carve a first contact hole on the first electrically isolating layer by photolithography and dry etching method, the first contact hole penetrating the said first electrically isolating layer; step 2.4, in the first contact hole, tungsten metal, tungsten and the metal of the first diode by a chemical vapor deposition method, said second diode, said a third diode and the fourth diode connected to the fifth diode; step 2 • 5, on the first electrically isolating layer by a sputtering physical vapor deposition of aluminum wiring, the said aluminum wiring is connected to the tungsten; step 2 • 6, the first electrically isolating layer 过涂布和光刻的方法设置红光过滤薄膜,所述红光过滤薄膜的位置与所述第三二极管对应; 步骤2.7,在所述第一电隔离层上通过涂布和光刻的方法设置黄光过滤薄膜,所述黄光过滤薄膜的位置与所述第二二极管对应; 步骤2.8,在所述第一电隔离层上通过涂布和光刻的方法设置蓝光过滤薄膜,所述蓝光过滤薄膜的位置与所述第一二极管对应; 步骤2.9,在所述第一电隔离层上通过等离子体增强化学气相沉积法淀积第二电隔离层,所述第二电隔离层包裹所述金属铝连线、所述红光过滤薄膜、所述黄光过滤薄膜及所述蓝光过滤薄膜; 步骤2.10,在所述第二电隔离层上通过物理气相沉积法溅射和光刻的方法设置红外光吸收薄膜,所述红外光吸收薄膜的位置与所述第一二极管、所述第二二极管、所述第三二极管及所述第四二极管对应; 步骤2.11,在所述第二电隔离 Lithographic coating and method is provided through the red filter membrane, the position of the red filter film corresponding to the third diode; Step 2.7, on the first electrically isolating layer by coating and photolithography Sets yellow filter membrane, the position of the yellow filter film corresponding to the second diode; step 2.8, the blue light is provided by means of filtration membrane coating and photolithography on the first electrically isolating layer the position of the blue filter film corresponding to the first diode; step 2.9, a second electrically isolating layer is deposited on the first electrically isolating layer by enhanced plasma chemical vapor deposition method, the second wrapping the layer of electrically isolated metallic aluminum wires, said red filter membrane, the yellow light and the blue filter membrane filtration membrane; step 2.10, sputtering by physical vapor deposition on the second electrically isolating layer provided the position and photolithography infrared light absorbing film, the infrared light absorbing film and the first diode, the second diode, the third diode and the fourth diode the corresponding tube; step 2.11, the second electrical isolation 上淀积介质层,所述介质层包裹所述红外光吸收薄膜。 Depositing a dielectric layer, the dielectric layer of the infrared light absorbing film wrapping.
3. 根据权利要求2所述的制造传感器集成电路的方法,其特征在于,所述第一电隔离层及所述第二电隔离层的厚度为1微米。 3. The method of manufacturing a sensor integrated circuit of claim 2, characterized in that the thickness of the first electrically isolating layer and the second electrically isolating layer is 1 micron.
4. 根据权利要求2或3所述的制造传感器集成电路的方法,其特征在于,所述第一电隔离层及所述第二电隔离层的材质为二氧化硅。 4. The method of claim 2 or 3 for producing a sensor integrated circuit as claimed in claim, wherein a material of the first electrically isolating layer and the second electrically isolating layer of silicon dioxide.
5. 根据权利要求2所述的制造传感器集成电路的方法,其特征在于,所述红光过滤薄膜的厚度为0.5微米〜1.0微米,所述红光过滤薄膜允许光谱波长为610纳米〜760纳米的红光通过; 所述黄光过滤薄膜的厚度为0.5微米〜1.0微米,所述黄光过滤薄膜允许光谱波长为490纳米〜570纳米的黄光通过; 所述蓝光过滤薄膜的厚度为0.5微米〜1.0微米,所述蓝光过滤薄膜允许光谱波长为450纳米〜480纳米的蓝光通过。 5. The method of manufacturing a sensor integrated circuit of claim 2, characterized in that said red filter film thickness of 0.5 m ~1.0 microns, the filter membrane allows red spectrum having a wavelength of 610 nanometers ~760 nanometers red light through; the yellow light filter film thickness of 0.5 m ~1.0 microns, the filter membrane allows yellow light having a wavelength of 490 nanometers spectral ~570 nm by yellow; blue filter film thickness of 0.5 m ~1.0 microns filter membrane allows the blue light spectrum having a wavelength of 450 nm ~480 nm blue light.
6.根据权利要求2所述的制造传感器集成电路的方法,其特征在于,所述红外光吸收薄膜吸收波长为760纳米〜3〇000纳米的红外光频谱的光束。 6. The method of claim 2 for producing an integrated circuit sensor according to claim, wherein the infrared light absorbing film absorption spectrum light beam having a wavelength of 760 nanometers ~3〇000 nm infrared.
7. 根据权利要求2所述的制造传感器集成电路的方法,其特征在于,所述步骤3包括: 步骤3.1,在所述第二衬底硅片上设置通孔,所述通孔贯穿所述第一电隔离层和所述第二衬底硅片; 步骤3.2,在所述通孔内填充金属铜,所述金属铜的两端分别与所述金属铝连线及所述桌一金属招布线连接; 步骤3.3,在所述第一衬底硅片上涂布聚希亚胺层,所述聚希亚胺层包裹所述第一金属铝布线,在所述聚希亚胺层上设有第二接触孔,在所述第二接触孔内设有金属球; 步骤3.4,通过所述金属球连接所述第一金属铝布线及所述第二金属铝布线。 7. The method of claim 2 for producing a sensor integrated circuit as claimed in claim, wherein said step 3 comprises: step 3.1, a through hole is provided on the second silicon substrate, the through hole penetrating the a first electrically isolating layer and the second silicon wafer substrate; step 3.2, both ends of the through-hole filled with metallic copper, the copper metal wires respectively connected to the aluminum metal and a metal of said tables move wiring connection; step 3.3, the coating layer of polyethylene amine Mejia, the polyethylene amine Mejia wrapping the first layer aluminum wirings provided on the polyethylene layer on the amine Mejia first silicon wafer substrate a second contact hole, a metal ball is provided in the second contact hole; step 3.4, aluminum wiring connecting the first metal and the second metal by the aluminum wiring metal ball.
8. 根据权利要求2所述的制造传感器集成电路的方法,其特征在于,所述介质层的厚度为1 •〇微米。 8. The method of claim 2 for producing an integrated circuit sensor according to claim, wherein the thickness of the dielectric layer is 1 • square micron.
9. 根据权利要求1、2或7所述的制造传感器集成电路的方法,其特征在于,所述第二衬底硅片的厚度为1〇〇微米。 9. The method of claim 1,2 or 7 for producing an integrated circuit sensor according to claim, characterized in that the thickness of the second silicon wafer substrate is 1〇〇 microns. .集成电路,其特征在于,所述集成电路采用权利要求1至9任意一项所述的制造传感器集成电路的方法制造。 The integrated circuit, wherein said integrated circuit using the method of any one of claims sensor for producing an integrated circuit manufacturing 1-9.
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