CN105671492A - SERS substrate based on REBCO template and preparation method - Google Patents
SERS substrate based on REBCO template and preparation method Download PDFInfo
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- CN105671492A CN105671492A CN201610031709.7A CN201610031709A CN105671492A CN 105671492 A CN105671492 A CN 105671492A CN 201610031709 A CN201610031709 A CN 201610031709A CN 105671492 A CN105671492 A CN 105671492A
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- 239000000758 substrate Substances 0.000 title claims abstract description 77
- 238000002360 preparation method Methods 0.000 title claims abstract description 30
- 238000004416 surface enhanced Raman spectroscopy Methods 0.000 title claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 84
- 239000002184 metal Substances 0.000 claims abstract description 84
- 238000000034 method Methods 0.000 claims abstract description 48
- 230000004048 modification Effects 0.000 claims abstract description 32
- 238000012986 modification Methods 0.000 claims abstract description 32
- 239000010409 thin film Substances 0.000 claims abstract description 7
- 239000002923 metal particle Substances 0.000 claims abstract description 4
- 238000000576 coating method Methods 0.000 claims description 94
- 239000011248 coating agent Substances 0.000 claims description 85
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
- 238000001704 evaporation Methods 0.000 claims description 11
- 230000008020 evaporation Effects 0.000 claims description 11
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 11
- 239000001301 oxygen Substances 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- 238000004544 sputter deposition Methods 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 5
- 238000011065 in-situ storage Methods 0.000 claims description 4
- 238000005034 decoration Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 17
- 230000008901 benefit Effects 0.000 abstract description 4
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 4
- 238000009776 industrial production Methods 0.000 abstract description 3
- 230000007246 mechanism Effects 0.000 abstract description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 37
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- 230000000694 effects Effects 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 7
- 239000004020 conductor Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 239000003960 organic solvent Substances 0.000 description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 5
- 238000001514 detection method Methods 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000002105 nanoparticle Substances 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 229910000420 cerium oxide Inorganic materials 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 229910001882 dioxygen Inorganic materials 0.000 description 4
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000010970 precious metal Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 238000002207 thermal evaporation Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000000089 atomic force micrograph Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000007735 ion beam assisted deposition Methods 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910000851 Alloy steel Inorganic materials 0.000 description 1
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000003495 polar organic solvent Substances 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000012779 reinforcing material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910001256 stainless steel alloy Inorganic materials 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
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- C—CHEMISTRY; METALLURGY
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/24—Vacuum evaporation
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/65—Raman scattering
- G01N21/658—Raman scattering enhancement Raman, e.g. surface plasmons
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Abstract
本发明公开了一种基于REBCO模版的SERS基底及其制备方法,所述SERS基底包括REBCO模版层及所述REBCO模版层外表镀覆的金属修饰层;其中,所述REBCO模版层的厚度在10~2000nm连续可调,结构从非晶到多晶,a、b轴取向及c轴取向或混合取向任意可调;所述金属修饰层为金属薄膜或者金属颗粒层;所述金属修饰层的厚度为5~200nm。本发明的基底及其制备方法与现有技术相比,优势在于:利用本发明制备的SERS基底均一性好,灵敏度高,且具有金属柔性特征,可满足多种应用需求;REBCO生长机理和生长方法已被大量研究,精确控制下的产业化生产容易实现;同时本发明的制备方法简单,生长过程中的实验参数相对化学方法更加容易控制,产业化制备成本可以低于0.5$/cm2。
The invention discloses a SERS substrate based on a REBCO template and a preparation method thereof. The SERS substrate includes a REBCO template layer and a metal modification layer coated on the outer surface of the REBCO template layer; wherein, the REBCO template layer has a thickness of 10 ~2000nm is continuously adjustable, the structure is from amorphous to polycrystalline, a, b axis orientation and c axis orientation or mixed orientation can be adjusted arbitrarily; the metal modification layer is a metal thin film or metal particle layer; the thickness of the metal modification layer 5-200nm. Compared with the prior art, the substrate and its preparation method of the present invention have the advantages of: the SERS substrate prepared by the present invention has good uniformity, high sensitivity, and has the characteristics of metal flexibility, which can meet various application requirements; REBCO growth mechanism and growth The method has been studied extensively, and industrial production under precise control is easy to realize; meanwhile, the preparation method of the present invention is simple, and the experimental parameters in the growth process are easier to control than chemical methods, and the cost of industrial production can be lower than 0.5$/cm 2 .
Description
技术领域technical field
本发明涉及一种基于REBCO模版的SERS基底及其制备方法,即一种利用稀土氧化物涂层导体作为模板制备的SERS基底及其制备方法,特别是涉及利用脉冲激光沉积技术(以后简称PLD)和化学方法制备具有一定取向和缺陷的稀土氧化物(以后简称REBCO,RE=稀土元素)涂层,然后以此为模板在柔性基底上制备均匀性好、增强效果明显、成本低且可重复性强的SERS基底的方法。The invention relates to a SERS substrate based on a REBCO template and a preparation method thereof, that is, a SERS substrate prepared using a rare earth oxide coated conductor as a template and a preparation method thereof, in particular to a pulsed laser deposition technology (hereinafter referred to as PLD) and chemical methods to prepare rare earth oxide (referred to as REBCO, RE=rare earth element) coatings with certain orientation and defects, and then use this as a template to prepare uniform, obvious enhancement effect, low cost and repeatability on flexible substrates. A method for a strong SERS substrate.
背景技术Background technique
表面增强拉曼光谱(SERS)是一种非常强大的高灵敏分析技术,它可以探测和分析物质表层所吸附的各类分子,对于有些体系,它的灵敏度甚至达到检测单分子水平。经过近几十年的发展,目前SERS领域仍然存在一些亟待解决的问题,总体来说包括以下三个方面:其一,扩大SERS增强材料的范围;其二,制备适当粗糙的SERS基底的工艺探索;其三,实现SERS定量分析的理论和技术。获取具有高敏感性、高稳定性、重复性的基底,并使基底具有很好的选择性,为目前拉曼检测基底设计与制造的关键问题。然而,SERS基底真正走向应用除了需要满足上诉要求外,还很大程度取决于SERS基底的产业化能力、生产工艺和生产成本。目前,常用SERS基底的制备方法为自下而上(Bottom-Up)和自上而下(Top-Down)两种方法。通常来讲,自下而上的方法是基于金和银等纳米颗粒的化学合成方法,虽然该方法简单、容易合成,但有很大的缺点,具体包括:1、利用溶液法合成的纳米颗粒制备的SERS基底,事实上只有很少一部分颗粒具有SERS活性,其他的纳米颗粒覆盖在基底表面抑制了SERS检测效果。2、溶液制备的纳米颗粒很难控制他们的团聚效果,必然会影响SERS检测效果的稳定性和重复性。3、特别重要的是,对于控制合成稳定纳米SERS活性热点的方法还不成熟,也就是说关于控制合成具有特定形貌的纳米结构还带有一定的随意性。自上而下方法一般是基于一些常规的物理技术,主要包括聚焦离子束法、模板印刷、CVD法、光刻法等,利用它们可以构建新颖且宏观的SERS活性基底。这类基底的劣势主要是:1、这种大表面积的基底很难从技术上实现完全控制,进而有可能导致不同批次衬底之间表面形貌不是完全一致。2、通常这种衬底具有较差的机械性能,尤其是柔韧性不好,容易断裂。除此之外,还有利用生物模版制备三维活性基底、表面功能修饰、激光溶蚀等方法。虽然其中的一些方法已经能够在小范围内实现周期性结构并获得较高的增益,但同时具备产业化应用所有要求的SERS基底尚未出现。Surface-enhanced Raman spectroscopy (SERS) is a very powerful and highly sensitive analytical technique that can detect and analyze various molecules adsorbed on the surface of a substance. For some systems, its sensitivity even reaches the single-molecule level. After decades of development, there are still some urgent problems to be solved in the field of SERS, which generally include the following three aspects: first, expanding the range of SERS reinforcing materials; second, exploring the process of preparing appropriately rough SERS substrates ; Third, realize the theory and technology of SERS quantitative analysis. Obtaining a substrate with high sensitivity, high stability, and repeatability, and making the substrate have good selectivity, is a key issue in the design and manufacture of Raman detection substrates. However, in addition to meeting the appeal requirements, the real application of SERS substrates also depends to a large extent on the industrialization capabilities, production processes and production costs of SERS substrates. At present, there are two commonly used methods for preparing SERS substrates: bottom-up (Bottom-Up) and top-down (Top-Down). Generally speaking, the bottom-up method is based on the chemical synthesis of nanoparticles such as gold and silver. Although this method is simple and easy to synthesize, it has great disadvantages, including: 1. Nanoparticles synthesized by solution method In the prepared SERS substrate, in fact, only a small part of the particles have SERS activity, and other nanoparticles cover the surface of the substrate to inhibit the SERS detection effect. 2. It is difficult to control the agglomeration effect of the nanoparticles prepared from the solution, which will inevitably affect the stability and repeatability of the SERS detection effect. 3. It is particularly important that the method for controlling the synthesis of stable nano-SERS active hotspots is still immature, that is to say, there is a certain degree of randomness in controlling the synthesis of nanostructures with specific morphologies. The top-down method is generally based on some conventional physical techniques, mainly including focused ion beam method, stencil printing, CVD method, photolithography, etc., which can be used to construct novel and macroscopic SERS active substrates. The main disadvantages of this type of substrate are: 1. It is difficult to completely control the substrate with such a large surface area technically, which may lead to inconsistent surface morphology between different batches of substrates. 2. Generally, this kind of substrate has poor mechanical properties, especially poor flexibility and is easy to break. In addition, there are methods such as the use of biological templates to prepare three-dimensional active substrates, surface functional modification, and laser ablation. Although some of these methods have been able to achieve periodic structures in a small area and obtain high gains, SERS substrates that meet all the requirements for industrial applications have not yet appeared.
作为一种最具应用潜力的高温超导材料,REBCO涂层导体因其具有的独特优势,被认为很可能取代以铋系为代表的第1代高温超导带材,应用于众多超导强电技术。自其诞生以来,国内外均给予高度关注,世界各国均投入了大量研究经费对其产业化制备技术进行研究,已取得了一系列的理论和实验成果。REBCO涂层导体本质上是一种颗粒型陶瓷氧化物,柔韧性较差,且具有很强的各向异性,因此第二代高温超导带材的普遍工艺,是采用各种镀膜手段在很薄(40~100微米)的传统金属基带(镍基合金或不锈钢等合金)上镀一层大约1到几个微米厚且同时应具备双轴织构的REBCO薄膜,这对工艺要求非常苛刻(其典型结构见说明书附图1)。As a high-temperature superconducting material with the most application potential, REBCO coated conductors are considered likely to replace the first-generation high-temperature superconducting strips represented by bismuth systems due to their unique advantages, and are used in many superconducting strong materials. electric technology. Since its birth, it has been highly concerned at home and abroad, and countries all over the world have invested a lot of research funds in the research of its industrial preparation technology, and a series of theoretical and experimental results have been obtained. The REBCO coated conductor is essentially a granular ceramic oxide with poor flexibility and strong anisotropy. Therefore, the common process of the second-generation high-temperature superconducting strip is to use various coating methods in a very Thin (40-100 microns) traditional metal substrates (nickel-based alloys or stainless steel alloys) are coated with a layer of REBCO film with a thickness of about 1 to several microns and should have a biaxial texture at the same time, which is very demanding on the process ( Its typical structure is shown in Figure 1 of the description.
直接沉积在金属基带上的REBCO超导膜会存在大量缺陷,超导性能很差,因此超导应用的制备必须在金属基带上加一缓冲层。缓冲层的作用一方面是诱导REBCO超导膜的取向生长,另一方面也可以作为隔离层防止REBCO与金属基底的反应和元素扩散。根据涂层导体技术路线的不同,缓冲层的选材也会有所不同。显然,缓冲层材料的选取、厚度、掺杂及生长条件,将会在很大程度上影响REBCO的生长状况,进而影响其表面形貌。例如,CeO2与超导层、金属基底均具有较小的晶格失配度,一直以来被用作高温超导体的缓冲层材料。但是,在制备高温超导涂层导体的时候,当CeO2缓冲层在金属基底上厚度超过一定值(约为50nm)就会出现微裂纹。微裂纹的出现进而影响超导层在缓冲层上的外延生长。除此之外,由于结构复杂,REBCO本身对于生长条件极其敏感。制备高性能超导带材的关键在于通过这些因素的调控使产生特定的缺陷,然而就表面形貌而言,对这些因素的调控同时可以使REBCO表面形貌产生一系列的变化(见说明书附图2)。就稳定性而言,REBCO超导涂层已经可以实现公里级300A/cm的一次性制备,这意味着所制备的REBCO涂层的均匀性、稳定性可以在生产过程中得到保证。与此同时,随着工艺的稳定性提高,REBCO的生产成本正逐年降低,目前使用PLD制备方法生产的REBCO涂层平均成本低于3¥/cm2。这就为用REBCO涂层导体作为模板修饰币族金属薄膜及纳米颗粒,制备具有信号均匀、SERS活性高、工艺稳定、制备速度快且制造成本低的SERS柔性基底提供了可能。The REBCO superconducting film deposited directly on the metal substrate will have a large number of defects, and the superconducting performance is very poor. Therefore, a buffer layer must be added on the metal substrate for the preparation of superconducting applications. On the one hand, the role of the buffer layer is to induce the orientation growth of the REBCO superconducting film, and on the other hand, it can also be used as an isolation layer to prevent the reaction between REBCO and the metal substrate and element diffusion. Depending on the technical route of the coated conductor, the material selection of the buffer layer will also be different. Obviously, the selection, thickness, doping and growth conditions of the buffer layer material will greatly affect the growth condition of REBCO, and then affect its surface morphology. For example, CeO 2 has a small lattice mismatch with superconducting layers and metal substrates, and has been used as a buffer layer material for high-temperature superconductors. However, when preparing a high-temperature superconducting coated conductor, when the thickness of the CeO 2 buffer layer on the metal substrate exceeds a certain value (about 50nm), microcracks will appear. The appearance of microcracks in turn affects the epitaxial growth of the superconducting layer on the buffer layer. In addition, REBCO itself is extremely sensitive to growth conditions due to its complex structure. The key to preparing high-performance superconducting strips is to produce specific defects through the regulation of these factors. However, as far as the surface morphology is concerned, the regulation of these factors can also produce a series of changes in the surface morphology of REBCO (see the appendix figure 2). In terms of stability, REBCO superconducting coatings can be prepared at one time at a kilometer level of 300A/cm, which means that the uniformity and stability of the prepared REBCO coatings can be guaranteed during the production process. At the same time, with the improvement of process stability, the production cost of REBCO is decreasing year by year. At present, the average cost of REBCO coating produced by PLD preparation method is lower than 3¥/cm 2 . This makes it possible to use REBCO-coated conductors as templates to modify coin-family metal thin films and nanoparticles to prepare SERS flexible substrates with uniform signal, high SERS activity, stable process, fast preparation speed and low manufacturing cost.
发明内容Contents of the invention
针对这一问题,本申请设计人凭借REBCO薄膜生长的实验经验,积极研究,提出了一种利用REBCO涂层作为模板制备SERS基底的方案,即一种基于REBCO模版的SERS基底及制备方法。In response to this problem, the designer of the present applicant actively researched based on the experimental experience of REBCO thin film growth, and proposed a method of using REBCO coating as a template to prepare a SERS substrate, that is, a SERS substrate and its preparation method based on a REBCO template.
本发明的目的之一是提供一种以REBCO为模版的具有优异特性的柔性SERS基底。One of the objectives of the present invention is to provide a flexible SERS substrate with excellent properties using REBCO as a template.
本发明的又一目的是提供一种以REBCO为模版的具有优异特性的柔性SERS基底的制备方法。Another object of the present invention is to provide a method for preparing a flexible SERS substrate with excellent properties using REBCO as a template.
本发明的目的是通过以下技术方案实现的:The purpose of the present invention is achieved through the following technical solutions:
为了达到本发明的第一目的,本发明提供一种基于REBCO模版的SERS基底,所述SERS基底包括REBCO(R=Y)模版层及所述REBCO模版层外表涂覆的金属修饰层。In order to achieve the first object of the present invention, the present invention provides a SERS substrate based on a REBCO stencil, the SERS substrate includes a REBCO (R=Y) stencil layer and a metal modification layer coated on the surface of the REBCO stencil layer.
优选地,所述REBCO模版层的厚度在10-2000nm连续可调,结构从非晶到多晶,a、b轴取向及c轴取向或混合取向任意可调。Preferably, the thickness of the REBCO template layer is continuously adjustable from 10 to 2000 nm, the structure is from amorphous to polycrystalline, and the a, b axis orientation and c axis orientation or mixed orientation can be adjusted arbitrarily.
优选地,所述金属修饰层为金属薄膜或者金属颗粒层;所述金属修饰层的厚度为5~200nm。Preferably, the metal modification layer is a metal thin film or a metal particle layer; the thickness of the metal modification layer is 5-200 nm.
进一步优选地,所述金属修饰层为单一金属层或者不同金属层的叠加。Further preferably, the metal modification layer is a single metal layer or a stack of different metal layers.
进一步优选地,所述金属修饰层金属包括Au、Ag、Cu或Al。Further preferably, the metal of the metal modification layer includes Au, Ag, Cu or Al.
为了达到本发明的又一目的,本发明提供一种所述基于REBCO模版的SERS基底的制备方法,包括以下步骤:In order to achieve another object of the present invention, the present invention provides a method for preparing the SERS substrate based on the REBCO template, comprising the following steps:
步骤一,将REBCO靶材升温至生长温度,调节激光能量和频率,通入氧气,镀膜系统传送装置带动金属基带穿过镀膜区,即可在金属基带缓冲层表面形成REBCO模版层;Step 1: Heating the REBCO target material to the growth temperature, adjusting the laser energy and frequency, introducing oxygen, and the conveying device of the coating system drives the metal base tape through the coating area to form a REBCO template layer on the surface of the metal base band buffer layer;
步骤二,REBCO靶材原位更换为修饰金属靶材,通过脉冲沉积方法、磁控溅射方法或热蒸镀方法在所述REBCO模版层表面镀金属修饰层,即得柔性SERS基底。In step 2, the REBCO target is replaced with a modified metal target in situ, and a metal modification layer is coated on the surface of the REBCO template layer by pulse deposition, magnetron sputtering or thermal evaporation to obtain a flexible SERS substrate.
优选地,步骤一中,所述金属基带在使用前需要用有机溶剂对其进行清洗,目的在于清洗长在金属基带上具有一定取向的缓冲层,以去除表面杂质。Preferably, in step 1, the metal base tape needs to be cleaned with an organic solvent before use, in order to clean the buffer layer with a certain orientation on the metal base tape to remove surface impurities.
优选地,步骤一中,所述REBCO是通过高温烧结制备的;所述有机溶剂指如丙酮等的无极性有机溶剂。Preferably, in step 1, the REBCO is prepared by high-temperature sintering; the organic solvent refers to a non-polar organic solvent such as acetone.
优选地,步骤一中,所述生长温度为650~850℃。Preferably, in step 1, the growth temperature is 650-850°C.
优选地,步骤一中,所述激光能量和频率具体为:E=50~300mJ,f=1~200Hz。Preferably, in Step 1, the laser energy and frequency are specifically: E=50-300mJ, f=1-200Hz.
优选地,步骤一中,所述氧气具体指纯氧,纯度为99.99%。Preferably, in step 1, the oxygen specifically refers to pure oxygen with a purity of 99.99%.
进一步地,通入氧气前,镀膜区为真空状态,通入氧气后镀膜区气压为5~200mTorr;更进一步地,所述真空状态具体气压为1×10-4~1×10-7Torr。Further, the coating area is in a vacuum state before the oxygen is introduced, and the air pressure in the coating area is 5-200 mTorr after the oxygen is introduced; further, the specific air pressure in the vacuum state is 1×10 -4 to 1×10 -7 Torr.
优选地,步骤一中,所述穿过是以5~10m/h的速度一次通过镀膜区,或者以30~50m/h的速度通过多通道镀膜区。Preferably, in Step 1, the passage is to pass through the coating area once at a speed of 5-10 m/h, or pass through the multi-channel coating area at a speed of 30-50 m/h.
优选地,步骤一中,所述REBCO靶材至镀膜区的距离为5~25cm;Preferably, in step 1, the distance from the REBCO target to the coating area is 5-25 cm;
优选地,步骤一中,所述REBCO模版层10~2000nm。Preferably, in step 1, the REBCO template layer is 10-2000 nm.
优选地,步骤二中,所述原位更换具体是在用于加热REBCO靶材的加热器温度降低到50℃、镀膜区的真空度低于1×10-7Torr的条件下进行的。Preferably, in step 2, the in-situ replacement is specifically carried out under the conditions that the temperature of the heater used to heat the REBCO target is reduced to 50° C. and the vacuum degree of the coating area is lower than 1×10 −7 Torr.
优选地,步骤二中,所述通过脉冲激光沉积方法在所述REBCO模版层表面镀金属修饰层具体包括:调节激光能量和频率,镀有REBCO模版层的金属基带通过镀膜区,即可在REBCO模版层的表面镀上金属修饰层。Preferably, in step 2, the metal modification layer coated on the surface of the REBCO template layer by the pulsed laser deposition method specifically includes: adjusting the laser energy and frequency, and the metal substrate coated with the REBCO template layer passes through the coating area, and the REBCO The surface of the template layer is plated with a metal decoration layer.
进一步优选地,所述激光能量和频率具体指:E=50~300mJ,f=1~200Hz。Further preferably, the laser energy and frequency specifically refer to: E=50-300mJ, f=1-200Hz.
进一步优选地,所述通过指镀有REBCO模版层的金属基带以30m/h的速度一次通过镀膜区,或者以150m/h的速度通过多通道镀膜区。Further preferably, the passing means that the metal substrate coated with the REBCO stencil layer passes through the coating area once at a speed of 30m/h, or passes through the multi-channel coating area at a speed of 150m/h.
优选地,步骤二中,所述通过磁控溅射方法在所述REBCO模版层表面镀金属修饰层具体包括:将镀有REBCO模版层的金属基带缠绕设置在磁控溅射镀膜系统内,通入氩气,控制溅射功率,镀有REBCO模版层的金属基带通过多道镀膜区,即可在REBCO模版层的表面镀上金属修饰层。Preferably, in step 2, said plating a metal modification layer on the surface of the REBCO stencil layer by magnetron sputtering specifically includes: winding the metal base tape coated with the REBCO stencil layer in a magnetron sputtering coating system, through Enter argon gas, control the sputtering power, and the metal substrate coated with the REBCO template layer passes through the multi-channel coating area, and the metal modification layer can be coated on the surface of the REBCO template layer.
进一步优选地,通入氩气后镀膜区的气压应达到起辉条件。Further preferably, the gas pressure in the coating area should reach glowing conditions after the argon gas is introduced.
进一步优选地,所述溅射功率具体为10~1000W。Further preferably, the sputtering power is specifically 10-1000W.
进一步优选地,所述通过具体指将镀有REBCO模版层的金属基带以1~50m/h的速度一次通过镀膜区,或者以7~200m/h的速度通过多通道镀膜区。Further preferably, the passing specifically refers to passing the metal substrate coated with the REBCO template layer through the coating area at a speed of 1-50 m/h once, or passing through the multi-channel coating area at a speed of 7-200 m/h.
优选地,步骤二中,所述通过热蒸镀方法在所述REBCO模版层表面镀金属修饰层具体包括:对所述镀有REBCO模版层的金属基带进行切割、固定,调节真空度,融化修饰金属靶材,打开MASK蒸镀至修饰金属层,即可。Preferably, in step 2, said plating a metal modification layer on the surface of the REBCO stencil layer by means of thermal evaporation specifically includes: cutting and fixing the metal substrate coated with the REBCO stencil layer, adjusting the vacuum degree, melting and modifying For the metal target, turn on the MASK and vapor-deposit to the modified metal layer.
进一步优选地,所述真空度具体指真空度低于3×10-6Torr。Further preferably, the vacuum degree specifically means that the vacuum degree is lower than 3×10 -6 Torr.
上述技术方案提供了一种以REBCO为模版制备具有光学应用潜力的柔性贵金属薄膜方法。REBCO模板层通过激光脉冲沉积(PLD)系统制备在常规金属基带上,其上的金属修饰层可以通过物理气相沉积实现(如磁控溅射、热蒸镀)。RBCO的表面形貌多样性可以通过改变生长温度、薄膜厚度等沉积条件有效调控,得益于超导薄膜生长控制技术,过程中薄膜具有很高的形貌稳定性和重复性。同时,RBCO的金属修饰层也可以通过改变沉积时间等方法来进行调控,以期获得最佳SERS增益效果。最优化的样品对10-11M的R6G仍然具有明显检测信号(接近单分子级别),且增益效果在样品表面均匀分布。就生产速度和性价比而言,本发明制备工艺相对超导线材而言更为简单,因此具有更快的生产速度和更低的成本。并且,得益于功能薄膜生长于柔性金属衬底上,这也使本发明的SERS基底可以根据实际使用中的需要加工成所需形状。The technical solution above provides a method for preparing a flexible noble metal thin film with optical application potential using REBCO as a template. The REBCO template layer is prepared on a conventional metal substrate by a laser pulse deposition (PLD) system, and the metal modification layer on it can be realized by physical vapor deposition (such as magnetron sputtering, thermal evaporation). The diversity of surface morphology of RBCO can be effectively controlled by changing the deposition conditions such as growth temperature and film thickness. Thanks to the superconducting film growth control technology, the film has high morphology stability and repeatability during the process. At the same time, the metal modification layer of RBCO can also be regulated by changing the deposition time and other methods, in order to obtain the best SERS gain effect. The optimized sample still has an obvious detection signal (close to the single molecule level) for R6G at 10 -11 M, and the gain effect is evenly distributed on the sample surface. In terms of production speed and cost performance, the preparation process of the present invention is simpler than that of the superconducting wire, so it has faster production speed and lower cost. Moreover, thanks to the growth of the functional thin film on the flexible metal substrate, the SERS substrate of the present invention can also be processed into a desired shape according to the needs in actual use.
本发明的优点和积极效果:Advantage and positive effect of the present invention:
1、利用本发明制备的SERS基底均一性好,表面形貌及颗粒大小、密度连续可调;1. The SERS substrate prepared by the present invention has good uniformity, and the surface morphology, particle size and density are continuously adjustable;
2、利用本发明制备的SERS基底灵敏度较高,优化后的样品探测极限接近单分子级别;2. The SERS substrate prepared by the present invention has high sensitivity, and the detection limit of the optimized sample is close to the single-molecule level;
3、本发明具有金属柔性特征,可满足多种应用需求,并且可以将样品机械切割成所需大小,降低使用成本;3. The invention has the characteristics of metal flexibility, which can meet various application requirements, and can mechanically cut samples into required sizes, reducing the cost of use;
4、REBCO生长机理和产业化生长方法已被大量研究,精确控制下的产业化生产容易实现;4. The growth mechanism and industrialized growth method of REBCO have been extensively studied, and the industrialized production under precise control is easy to realize;
5、同时本发明的制备方法简单,生长过程中的实验参数相对化学方法更加容易控制,产业化制备成本可以低于0.5$/cm2。5. At the same time, the preparation method of the present invention is simple, the experimental parameters in the growth process are easier to control than chemical methods, and the industrial production cost can be lower than 0.5$/cm 2 .
附图说明Description of drawings
通过阅读参照以下附图对非限制性实施例所作的详细描述,本发明的其它特征、目的和优点将会变得更明显:Other characteristics, objects and advantages of the present invention will become more apparent by reading the detailed description of non-limiting embodiments made with reference to the following drawings:
图1基于IBAD技术制备的REBCO模版截面图;Figure 1 The cross-sectional view of the REBCO template prepared based on IBAD technology;
图2REBCO在不同温度条件下的表面形貌AFM图片(10μm*10μm);Figure 2 AFM images of the surface morphology of REBCO under different temperature conditions (10μm*10μm);
图3REBCO不同厚度时表面形貌AFM图片(20μm20μm);Fig.3 AFM images of surface morphology of REBCO with different thicknesses (20μm20μm);
图4REBCO的XRD衍射图;The XRD diffraction pattern of Fig. 4REBCO;
图5同一样品对不同浓度R6G溶液的增强效果;The enhancement effect of the same sample in Fig. 5 to different concentrations of R6G solutions;
图6不同基底对同一浓度R6G溶液的增强效果;The enhancing effect of Fig. 6 different substrates to the same concentration R6G solution;
图7不同厚度基底对同一浓度R6G溶液的增强效果;The enhancement effect of the same concentration R6G solution on different thickness substrates of Fig. 7;
图8200nm厚模版的RAMmapping结果;Figure 8 RAMmapping results of 200nm thick stencil;
图9实际样品。Figure 9 Actual sample.
具体实施方式detailed description
下面结合具体实施例对本发明进行详细说明。以下实施例将有助于本领域的技术人员进一步理解本发明,但不以任何形式限制本发明。应当指出的是,对本领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干变形和改进。这些都属于本发明的保护范围。The present invention will be described in detail below in conjunction with specific embodiments. The following examples will help those skilled in the art to further understand the present invention, but do not limit the present invention in any form. It should be noted that those skilled in the art can make several modifications and improvements without departing from the concept of the present invention. These all belong to the protection scope of the present invention.
如说明书附图1所示,是本发明实施过程中采用IBAD技术制备的REBCO涂层导体截面图。其特征在于,使REBCO生长在具有一定织构的衬底上。下面,本实施例在以本发明技术方案为前提下进行实施,给出了详细的实施方式和具体的操作过程,但本发明的保护范围不限于下述的实施例。As shown in Figure 1 of the description, it is a cross-sectional view of a REBCO coated conductor prepared by IBAD technology during the implementation of the present invention. It is characterized in that REBCO is grown on a substrate with a certain texture. In the following, this embodiment is implemented on the premise of the technical solution of the present invention, and the detailed implementation and specific operation process are given, but the protection scope of the present invention is not limited to the following embodiments.
实施例1Example 1
本实施例提供一种在金属基底上制备REBCO模板层和金属修饰层的PLD制备方法,包括以下步骤:This embodiment provides a PLD preparation method for preparing a REBCO template layer and a metal modification layer on a metal substrate, comprising the following steps:
步骤1、样品准备;Step 1, sample preparation;
步骤1.1、将所需长度的生长着有取向缓冲层的金属基带取出并用有机溶剂清洗;Step 1.1, taking out the metal base tape with the oriented buffer layer of the desired length and cleaning it with an organic solvent;
步骤1.2、将具有双轴织构的氧化铈衬底基带多次缠绕设置在多通道激光镀膜系统内;Step 1.2, the cerium oxide substrate base tape with biaxial texture is wound multiple times and placed in a multi-channel laser coating system;
步骤2、实验准备;Step 2, experiment preparation;
步骤2.1、开启设备,把经高温烧结制备的REBCO靶材及贵金属靶材分别装在腔体中的靶托上;Step 2.1, turn on the equipment, and install the REBCO target and the precious metal target prepared by high-temperature sintering on the target holder in the cavity;
步骤2.2、调节靶材到基带镀膜区的距离为25cm;Step 2.2, adjust the distance from the target to the baseband coating area to be 25cm;
步骤2.3、关闭镀膜系统的真空门,并抽真空至1×10-7Torr;Step 2.3, close the vacuum door of the coating system, and evacuate to 1×10 -7 Torr;
步骤3、启动加热器,同时转动REBCO靶材,升温至所需生长温度850℃;Step 3. Turn on the heater and turn the REBCO target at the same time to heat up to the required growth temperature of 850°C;
步骤4、关闭分子泵,将氧气通入镀膜系统,并将总气压控制到所需气压值,如200mTorr;Step 4. Turn off the molecular pump, pass oxygen into the coating system, and control the total air pressure to the required air pressure value, such as 200mTorr;
步骤5、启动准分子激光器,并将激光能量和频率升到REBCO模板层镀膜工艺所需的值,E=300mJ,f=200Hz;Step 5, start the excimer laser, and increase the laser energy and frequency to the value required by the REBCO template layer coating process, E=300mJ, f=200Hz;
步骤6、等气压、温度、激光能量、激光频率稳定后,打开激光光路开关,开始激光靶表面预蒸发过程,这一过程大约持续5分钟;Step 6. After the air pressure, temperature, laser energy, and laser frequency are stable, turn on the laser light path switch to start the pre-evaporation process on the surface of the laser target. This process lasts for about 5 minutes;
步骤7、等激光蒸发形成的椭球状等离子体稳定后,启动镀膜系统传动装置,使预先固定在镀膜系统内的基带以10m/h的速度一次通过镀膜区,或者以50m/h的速度通过多通道镀膜区;Step 7. After the ellipsoidal plasma formed by laser evaporation is stable, start the transmission device of the coating system, so that the base tape pre-fixed in the coating system passes through the coating area at a speed of 10m/h, or passes through the coating area at a speed of 50m/h. Channel coating area;
步骤8、完成REBCO模版层镀膜后,关闭激光光路开关,关闭加热器电源开关,关闭氧气气体流量计阀门,打开抽真空系统,逐步降低机关器频率并关闭准分子激光器;Step 8. After the REBCO stencil layer coating is completed, turn off the laser light path switch, turn off the heater power switch, turn off the oxygen gas flow meter valve, turn on the vacuum system, gradually reduce the shutdown frequency and turn off the excimer laser;
步骤9、待加热器温度降低到50℃以下,同时真空度低于1×10-7Torr,通过原位换靶直接在真空腔内更换REBCO靶材为贵金属靶材;Step 9. After the temperature of the heater drops below 50°C and the vacuum degree is lower than 1×10 -7 Torr, replace the REBCO target directly in the vacuum chamber with a noble metal target through in-situ target replacement;
步骤10、启动准分子激光器,并将激光能量和频率升到金属层镀膜工艺所需的值,E=200mJ,f=50Hz;Step 10, start the excimer laser, and raise the laser energy and frequency to the value required by the metal layer coating process, E=200mJ, f=50Hz;
步骤11、等温度、激光能量、激光频率稳定后,打开激光光路开关,等激光蒸发形成的椭球状等离子体稳定后,启动镀膜系统传动装置,使基带以30m/h的速度一次通过镀膜区,或者以150m/h的速度通过多通道镀膜区;Step 11. After the temperature, laser energy, and laser frequency are stable, turn on the laser optical path switch, and wait for the ellipsoidal plasma formed by laser evaporation to be stable, start the transmission device of the coating system, so that the baseband passes through the coating area at a speed of 30m/h. Or pass through the multi-channel coating area at a speed of 150m/h;
步骤12、完成金属层镀膜后,关闭激光光路开关逐步降低机关器频率并关闭准分子激光器;Step 12. After the metal layer coating is completed, turn off the laser light path switch to gradually reduce the shutdown frequency and turn off the excimer laser;
步骤13、打开氮气充气阀门,使真空腔内充大气至1个大气压,取出样品并切割成所需大小,检测其SERS特性。Step 13. Open the nitrogen inflation valve to inflate the vacuum chamber to 1 atmosphere, take out the sample and cut it into the required size, and test its SERS characteristics.
实施例2Example 2
本实施例提供一种在金属基底上用PLD制备REBCO并利用磁控溅射制备金属修饰层的方法,包括以下步骤:This embodiment provides a method for preparing REBCO with PLD on a metal substrate and using magnetron sputtering to prepare a metal modification layer, including the following steps:
步骤1、样品准备;Step 1, sample preparation;
步骤1.1、将所需长度的生长着有取向缓冲层的金属基带取出并用有机溶剂清洗;Step 1.1, taking out the metal base tape with the oriented buffer layer of the desired length and cleaning it with an organic solvent;
步骤1.2、将具有双轴织构的氧化铈衬底基带多次缠绕设置在多通道激光镀膜系统内;Step 1.2, the cerium oxide substrate base tape with biaxial texture is wound multiple times and placed in a multi-channel laser coating system;
步骤2、实验准备;Step 2, experiment preparation;
步骤2.1、开启设备,把经高温烧结制备的REBCO靶材及贵金属靶材分别装在腔体中的靶托上;Step 2.1, turn on the equipment, and install the REBCO target and the precious metal target prepared by high-temperature sintering on the target holder in the cavity;
步骤2.2、调节靶材到基带镀膜区的距离为5cm;Step 2.2, adjust the distance from the target to the baseband coating area to be 5cm;
步骤2.3、关闭镀膜系统的真空门,并抽真空至1×10-4Torr;Step 2.3, close the vacuum door of the coating system, and evacuate to 1×10 -4 Torr;
步骤3、启动加热器,同时转动REBCO靶材,升温至所需生长温度650℃;Step 3. Turn on the heater and turn the REBCO target at the same time to heat up to the required growth temperature of 650°C;
步骤4、关闭分子泵,将氧气通入镀膜系统,并将总气压控制到所需气压值,如5mTorr;Step 4. Turn off the molecular pump, pass oxygen into the coating system, and control the total air pressure to the required air pressure value, such as 5mTorr;
步骤5、启动准分子激光器,并将激光能量和频率升到REBCO模板层镀膜工艺所需的值,E=50mJ,f=1Hz;Step 5, start the excimer laser, and increase the laser energy and frequency to the value required by the REBCO template layer coating process, E=50mJ, f=1Hz;
步骤6、等气压、温度、激光能量、激光频率稳定后,打开激光光路开关,开始激光靶表面预蒸发过程,这一过程大约持续5分钟;Step 6. After the air pressure, temperature, laser energy, and laser frequency are stable, turn on the laser light path switch to start the pre-evaporation process on the surface of the laser target. This process lasts for about 5 minutes;
步骤7、等激光蒸发形成的椭球状等离子体稳定后,启动镀膜系统传动装置,使预先固定在镀膜系统内的基带以5m/h的速度一次通过镀膜区,或者以30m/h的速度通过多通道镀膜区;Step 7. After the ellipsoidal plasma formed by laser evaporation is stable, start the transmission device of the coating system, so that the base tape pre-fixed in the coating system passes through the coating area at a speed of 5m/h, or passes through the coating area at a speed of 30m/h. Channel coating area;
步骤8、完成REBCO模版层镀膜后,关闭激光光路开关,关闭加热器电源开关,关闭氧气气体流量计阀门,逐步降低机关器频率并关闭准分子激光器;Step 8. After the coating of the REBCO stencil layer is completed, turn off the laser light path switch, turn off the heater power switch, turn off the oxygen gas flow meter valve, gradually reduce the switching frequency and turn off the excimer laser;
步骤9、待温度降至50℃以下时,打开氮气充气阀门,使真空腔内内大气压至一个大气压,取出样品并将长有REBCO模板层的基带多次缠绕设置在多通道磁控溅射镀膜系统内,控制真空度低于1×10-7Torr;Step 9. When the temperature drops below 50°C, open the nitrogen inflation valve to make the atmospheric pressure in the vacuum chamber reach one atmospheric pressure, take out the sample and wind the base tape with the REBCO template layer multiple times and set it on the multi-channel magnetron sputtering coating In the system, the control vacuum degree is lower than 1×10 -7 Torr;
步骤10、通入氩气至达到起辉条件,启动电流至起辉,控制溅射的功率为10W;Step 10, feed argon gas until the ignition condition is reached, start the current until the ignition, and control the sputtering power to 10W;
步骤11、等溅射稳定后,启动镀膜系统传动装置,使基带以1m/h的速度一次通过镀膜区,或者以7m/h的速度通过多通道镀膜区;Step 11. After the sputtering is stable, start the transmission device of the coating system, so that the base tape passes through the coating area at a speed of 1m/h, or passes through the multi-channel coating area at a speed of 7m/h;
步骤13、打开氮气充气阀门,使真空腔内充大气至1个大气压,取出样品并切割成所需大小,检测其SERS特性;Step 13. Open the nitrogen inflation valve to inflate the vacuum chamber to 1 atmosphere, take out the sample and cut it into the required size, and test its SERS characteristics;
实施例3Example 3
本实施例提供一种在金属基底上利用PLD制备REBCO模板层并用真空蒸镀制备金属修饰层的方法,包括以下步骤:This embodiment provides a method for preparing a REBCO template layer using PLD on a metal substrate and preparing a metal modification layer by vacuum evaporation, including the following steps:
步骤1、样品准备;Step 1, sample preparation;
步骤1.1、将所需长度的生长着有取向缓冲层的金属基带取出并用有机溶剂清洗;Step 1.1, taking out the metal base tape with the oriented buffer layer of the desired length and cleaning it with an organic solvent;
步骤1.2、将具有双轴织构的氧化铈衬底基带多次缠绕设置在多通道激光镀膜系统内;Step 1.2, the cerium oxide substrate base tape with biaxial texture is wound multiple times and placed in a multi-channel laser coating system;
步骤2、实验准备;Step 2, experiment preparation;
步骤2.1、开启设备,把经高温烧结制备的REBCO靶材及贵金属靶材分别装在腔体中的靶托上;Step 2.1, turn on the equipment, and install the REBCO target and the precious metal target prepared by high-temperature sintering on the target holder in the cavity;
步骤2.2、调节靶材到基带镀膜区的距离为25mm;Step 2.2, adjust the distance from the target to the baseband coating area to be 25mm;
步骤2.3、关闭镀膜系统的真空门,并抽真空至1×10-6Torr;Step 2.3, close the vacuum door of the coating system, and evacuate to 1×10 -6 Torr;
步骤3、启动加热器,同时转动REBCO靶材,升温至所需生长温度700℃;Step 3. Turn on the heater and turn the REBCO target at the same time to heat up to the required growth temperature of 700°C;
步骤4、关闭分子泵,将氧气通入镀膜系统,并将总气压控制到所需气压值,如100mTorr;Step 4. Turn off the molecular pump, pass oxygen into the coating system, and control the total air pressure to the required air pressure value, such as 100mTorr;
步骤5、启动准分子激光器,并将激光能量和频率升到REBCO模板层镀膜工艺所需的值,E=200mJ,f=100Hz;Step 5, start the excimer laser, and raise the laser energy and frequency to the value required by the REBCO template layer coating process, E=200mJ, f=100Hz;
步骤6、等气压、温度、激光能量、激光频率稳定后,打开激光光路开关,开始激光靶表面预蒸发过程,这一过程大约持续5分钟;Step 6. After the air pressure, temperature, laser energy, and laser frequency are stable, turn on the laser light path switch to start the pre-evaporation process on the surface of the laser target. This process lasts for about 5 minutes;
步骤7、等激光蒸发形成的椭球状等离子体稳定后,启动镀膜系统传动装置,使预先固定在镀膜系统内的基带以10m/h的速度一次通过镀膜区,或者以50m/h的速度通过多通道镀膜区;Step 7. After the ellipsoidal plasma formed by laser evaporation is stable, start the transmission device of the coating system, so that the base tape pre-fixed in the coating system passes through the coating area at a speed of 10m/h, or passes through the coating area at a speed of 50m/h. Channel coating area;
步骤8、完成REBCO模版层镀膜后,关闭激光光路开关,关闭加热器电源开关,关闭氧气气体流量计阀门,打开抽真空系统,逐步降低机关器频率并关闭准分子激光器;Step 8. After the REBCO stencil layer coating is completed, turn off the laser light path switch, turn off the heater power switch, turn off the oxygen gas flow meter valve, turn on the vacuum system, gradually reduce the shutdown frequency and turn off the excimer laser;
步骤9、待温度降至50℃以下时,打开氮气充气阀门,使真空腔内内大气压至一个大气压,取出样品切割成所需大小;Step 9. When the temperature drops below 50°C, open the nitrogen inflation valve to make the atmospheric pressure in the vacuum chamber reach one atmospheric pressure, take out the sample and cut it into the required size;
步骤10、将样品固定于样品架,控制真空度低于3×10-6Torr;步骤11、通电流将预先放置的钛融化,打开MASK开始蒸镀至厚度约10nm后关闭MASK;Step 10, fix the sample on the sample holder, and control the vacuum degree to be lower than 3×10 -6 Torr; Step 11, turn on the current to melt the pre-placed titanium, turn on the MASK and start vapor deposition to a thickness of about 10nm, then turn off the MASK;
步骤12、通电流将预先放置的金融化,打开MASK开始蒸镀至厚度约30nm后关闭MASK;Step 12, turn on the pre-placed financialization by passing current, turn on the mask and start evaporation to a thickness of about 30nm, then turn off the mask;
步骤13、打开氮气充气阀门,使真空腔内充大气至1个大气压,取出样品并切割成所需大小,检测其SERS特性。Step 13. Open the nitrogen inflation valve to inflate the vacuum chamber to 1 atmosphere, take out the sample and cut it into the required size, and test its SERS characteristics.
实施例4Example 4
本实施例提供一种在金属基底上用PLD制备REBCO并利用磁控溅射制备金属修饰层的方法,包括以下步骤:This embodiment provides a method for preparing REBCO with PLD on a metal substrate and using magnetron sputtering to prepare a metal modification layer, including the following steps:
步骤1、样品准备;Step 1, sample preparation;
步骤1.1、将所需长度的生长着有取向缓冲层的金属基带取出并用有机溶剂清洗;Step 1.1, taking out the metal base tape with the oriented buffer layer of the desired length and cleaning it with an organic solvent;
步骤1.2、将具有双轴织构的氧化铈衬底基带多次缠绕设置在多通道激光镀膜系统内;Step 1.2, the cerium oxide substrate base tape with biaxial texture is wound multiple times and placed in a multi-channel laser coating system;
步骤2、实验准备;Step 2, experiment preparation;
步骤2.1、开启设备,把经高温烧结制备的REBCO靶材及贵金属靶材分别装在腔体中的靶托上;Step 2.1, turn on the equipment, and install the REBCO target and the precious metal target prepared by high-temperature sintering on the target holder in the cavity;
步骤2.2、调节靶材到基带镀膜区的距离为5cm;Step 2.2, adjust the distance from the target to the baseband coating area to be 5cm;
步骤2.3、关闭镀膜系统的真空门,并抽真空至1×10-4Torr;Step 2.3, close the vacuum door of the coating system, and evacuate to 1×10 -4 Torr;
步骤3、启动加热器,同时转动REBCO靶材,升温至所需生长温度650℃;Step 3. Turn on the heater and turn the REBCO target at the same time to heat up to the required growth temperature of 650°C;
步骤4、关闭分子泵,将氧气通入镀膜系统,并将总气压控制到所需气压值,如5mTorr;Step 4. Turn off the molecular pump, pass oxygen into the coating system, and control the total air pressure to the required air pressure value, such as 5mTorr;
步骤5、启动准分子激光器,并将激光能量和频率升到REBCO模板层镀膜工艺所需的值,E=50mJ,f=1Hz;Step 5, start the excimer laser, and increase the laser energy and frequency to the value required by the REBCO template layer coating process, E=50mJ, f=1Hz;
步骤6、等气压、温度、激光能量、激光频率稳定后,打开激光光路开关,开始激光靶表面预蒸发过程,这一过程大约持续5分钟;Step 6. After the air pressure, temperature, laser energy, and laser frequency are stable, turn on the laser light path switch to start the pre-evaporation process on the surface of the laser target. This process lasts for about 5 minutes;
步骤7、等激光蒸发形成的椭球状等离子体稳定后,启动镀膜系统传动装置,使预先固定在镀膜系统内的基带以5m/h的速度一次通过镀膜区,或者以30m/h的速度通过多通道镀膜区;Step 7. After the ellipsoidal plasma formed by laser evaporation is stable, start the transmission device of the coating system, so that the base tape pre-fixed in the coating system passes through the coating area at a speed of 5m/h, or passes through the coating area at a speed of 30m/h. Channel coating area;
步骤8、完成REBCO模版层镀膜后,关闭激光光路开关,关闭加热器电源开关,关闭氧气气体流量计阀门,逐步降低机关器频率并关闭准分子激光器;Step 8. After the coating of the REBCO stencil layer is completed, turn off the laser light path switch, turn off the heater power switch, turn off the oxygen gas flow meter valve, gradually reduce the switching frequency and turn off the excimer laser;
步骤9、待温度降至50℃以下时,打开氮气充气阀门,使真空腔内内大气压至一个大气压,取出样品并将长有REBCO模板层的基带多次缠绕设置在多通道磁控溅射镀膜系统内,控制真空度低于1×10-7Torr;Step 9. When the temperature drops below 50°C, open the nitrogen inflation valve to make the atmospheric pressure in the vacuum chamber reach one atmospheric pressure, take out the sample and wind the base tape with the REBCO template layer multiple times and set it on the multi-channel magnetron sputtering coating In the system, the control vacuum degree is lower than 1×10 -7 Torr;
步骤10、通入氩气至5mTorr,启动电流至起辉,控制溅射的功率为1000W;Step 10, feed argon gas to 5mTorr, start the current to glow, and control the sputtering power to 1000W;
步骤11、等溅射稳定后,启动镀膜系统传动装置,使基带以50m/h的速度一次通过镀膜区,或者以200m/h的速度通过多通道镀膜区;Step 11. After the sputtering is stable, start the transmission device of the coating system, so that the base tape passes through the coating area at a speed of 50m/h, or passes through the multi-channel coating area at a speed of 200m/h;
步骤13、打开氮气充气阀门,使真空腔内充大气至1个大气压,取出样品并切割成所需大小,检测其SERS特性。Step 13. Open the nitrogen inflation valve to inflate the vacuum chamber to 1 atmosphere, take out the sample and cut it into the required size, and test its SERS characteristics.
通过上述制备方法得到一种基于REBCO模版的SERS基底,所述SERS基底包括REBCO(R=Y)模版层及所述REBCO模版层外表涂覆的金属修饰层;所述REBCO模版层的厚度在10-2000nm连续可调,结构从非晶到多晶,a、b轴取向及c轴取向或混合取向任意可调;所述金属修饰层为金属薄膜或者金属颗粒层;所述金属修饰层的厚度为5~200nm。附图2是制备过程中REBCO在不同生长温度下表面特征变化的AFM结果;附图4的XRD测量结果表明其具有a、c轴过渡生长状态的特点,表面形成柱状颗粒的纳米簇;附图3是900℃设置温度下,REBCO模板层在不同厚度时的形貌特点,根据附图4的XRD测量结果,随着REBCO模板层厚度的增加,其表面颗粒逐渐长大,数量也逐渐变多;附图6、附图7中的RAM测试前样品被浸没在相应浓度溶液中约10分钟,之后自然风干,测量结果显示增强效果其与REBCO表面形态密切相关,且多次实验显示其具有优异的制备稳定性与增强均一性(附图8);附图5是实验样品(见图9)对于10-11M的R6G溶液均仍具有明显增益。Obtain a kind of SERS substrate based on REBCO stencil by above-mentioned preparation method, described SERS substrate comprises REBCO (R=Y) stencil layer and the metal modification layer that described REBCO stencil layer exterior is coated; The thickness of described REBCO stencil layer is in 10 -2000nm is continuously adjustable, the structure is from amorphous to polycrystalline, a, b-axis orientation and c-axis orientation or mixed orientation can be adjusted arbitrarily; the metal modification layer is a metal film or metal particle layer; the thickness of the metal modification layer 5-200nm. Accompanying drawing 2 is the AFM result of the surface characteristic change of REBCO under different growth temperatures during the preparation process; The XRD measurement result of accompanying drawing 4 shows that it has the characteristics of a, c-axis transitional growth state, and nano-clusters of columnar particles are formed on the surface; 3 is the morphology characteristics of the REBCO template layer at different thicknesses at the set temperature of 900°C. According to the XRD measurement results of Figure 4, as the thickness of the REBCO template layer increases, the surface particles gradually grow and the number gradually increases ; The RAM test samples in Figure 6 and Figure 7 were immersed in the corresponding concentration solution for about 10 minutes, and then dried naturally. The measurement results showed that the enhancement effect was closely related to the surface morphology of REBCO, and multiple experiments showed that it had excellent The preparation stability and enhanced uniformity (accompanying drawing 8); accompanying drawing 5 is that the experimental sample (see figure 9) still has obvious gain for the 10 -11 M R6G solution.
以上对本发明的具体实施例进行了描述。需要理解的是,本发明并不局限于上述特定实施方式,本领域技术人员可以在权利要求的范围内做出各种变形或修改,这并不影响本发明的实质内容。Specific embodiments of the present invention have been described above. It should be understood that the present invention is not limited to the specific embodiments described above, and those skilled in the art may make various changes or modifications within the scope of the claims, which do not affect the essence of the present invention.
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