CN105629076B - A kind of manufacture method of the seven-electrode conductivity sensor based on MEMS silica glass techniques - Google Patents

A kind of manufacture method of the seven-electrode conductivity sensor based on MEMS silica glass techniques Download PDF

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CN105629076B
CN105629076B CN201510993098.XA CN201510993098A CN105629076B CN 105629076 B CN105629076 B CN 105629076B CN 201510993098 A CN201510993098 A CN 201510993098A CN 105629076 B CN105629076 B CN 105629076B
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electrode
silicon chip
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cavity
metal
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CN105629076A (en
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刘海韵
魏爽
郭洁
王娴珏
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Hohai University HHU
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G01R27/22Measuring resistance of fluids
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00047Cavities

Abstract

The invention discloses a kind of manufacture method of the seven-electrode conductivity sensor based on MEMS silica glass techniques, it is included in N-type silicon chip and deposits metal electrode, metal electrode is deposited on the glass sheet, golden gold bonding is carried out to the end face of metal electrode, cylindrical cavity is set to form the steps such as the conductance cell of closing, the manufacture method of seven-electrode conductivity sensor provided by the invention is simple, compact, based on MEMS process technologies, it can be mass-produced, reduce production cost, machining accuracy is high, reliability is high, versatile.

Description

A kind of manufacture of the seven-electrode conductivity sensor based on MEMS si-glass techniques Method
Technical field
The present invention relates to a kind of manufacture method of the seven-electrode conductivity sensor based on MEMS si-glass techniques, it is related to Microelectromechanical systems manufacture, Ocean Surveying application scenario, especially suitable for high accuracy, high-volume, inexpensive, small size electricity The manufacture of conductivity sensor.
Background technology
At present, oceanographic observation is constantly subjected to widely pay close attention to, and sea water conductivity is the most basic physical element of ocean water body, Various phenomenons, process in ocean, the existence and breeding of marine organisms, and the offshore activities of the mankind, including it is marine military living It is dynamic, it is nearly all directly or indirectly related to the spatial and temporal distributions of sea water conductivity.
The sensor of in-site measurement sea water conductivity is broadly divided into electric pole type and induction type, wherein electric pole type conductivity sensors Device subsequent process circuit is simple, measurement accuracy is high, easy to use, is widely used in the conductivity measurement of seawater.Electric pole type conductance Rate sensor typically uses multiple electrode structure, wherein, seven-electrode conductivity sensor and two conventional electrodes, three electrodes, four electricity Electrode conductance rate sensor is compared, and precision is higher, and performance is more preferable.In the prior art, the manufacture to seven-electrode conductivity sensor is adopted With traditional machining, machining accuracy is low, difficulty of processing is big, high processing costs, unsuitable high-volume manufacture.And use MEMS Technology manufactures conductivity sensor, can realize high accuracy, low-cost, high-volume processing, the sensor that MEMS is produced is also With small volume, it is low in energy consumption, be easy to electronic circuit realize interact the characteristics of, be suitably applied it is automatic, online, long-term, continuous, Multi-platform, networking oceanographic observation.
The content of the invention
It is a primary object of the present invention to overcome the shortcomings of tradition machinery process technology, there is provided one kind is based on MEMS silicon-glass The manufacture method of the seven-electrode conductivity sensor of glass technique, the manufacture method is simple to operate, can be mass-produced, and reduces production Cost, machining accuracy is high, and reliability is high, versatile.The conductivity sensor compact of manufacture, measurement accuracy is high, measurement Speed is fast, easy to use.
In order to achieve the above object, the technical solution adopted in the present invention is:
A kind of manufacture method of the seven-electrode conductivity sensor based on MEMS si-glass techniques, it is characterised in that including Following steps:
(1) photoresist is deposited in N-type silicon chip and carries out photoetching, the centre of silicon chip is exposed a rectangular area conduct Spread window;
(2) using the photoresist in step (1) as mask, P is carried out to silicon chip at the diffusion window of formation from step (1) Type is adulterated, and the p type diffused layer of semi-cylindrical is internally formed in silicon chip;
(3) PN junction etch stop technology is used, the p type diffused layer of semi-cylindrical is corroded, forms semicircle column type Cavity;
(4) the silicon chip upper surface formed in step (3) is aoxidized, the oxide layer of formation combines to be formed with N-type silicon chip Dielectric substrate;
(5) semi-circular cross-sections side of the semicircle column type cavity upper surface formed in step (4) along semicircle column type cavity To the metal electrode of seven semi-circular shape of parallel deposition, one end of each metal electrode respectively carries a metal anchors area;Seven Metal electrode is arranged all along the length direction of semicircle column type cavity, is parallel to each other between electrode, positioned at outermost two electricity Extremely grounding electrode, an electrode positioned at centre is galvanic electrode, and remaining four electrode is voltage electrode, and each two is adjacent Voltage electrode be a pair, the point centered on the galvanic electrode of centre, the pair of grounding electrode and two pairs of voltage electrodes are along empty Cavity length direction is symmetrical arranged;Described two grounding electrodes are identical with one galvanic electrode size, four voltage electricity Pole size is identical, wherein, the equal length of all electrodes, the width of voltage electrode is less than the width of galvanic electrode and grounding electrode Degree;
(6) rectangular groove will be etched on the substrate silicon chip of sheet glass, p-type in the length and width and step (2) of institute's fluting Size of the diffusion layer on N-type silicon chip surface is identical;
(7) anode linkage, sheet glass and base are carried out using the substrate silicon chip after the cutting obtained in sheet glass and step (6) The thermal coefficient of expansion of bottom silicon chip is identical;
(8) using the device after the bonding of high temperature stove heat, glass melting under high temperature action, the gas quilt in rectangular recess Heating produces pressure and expanded, and makes to form semicircle column type glass cover on sheet glass;
(9) substrate silicon chip is eroded using selective corrosion agent, retains glass chip architecture;
(10) metal electrode with step (5) seven semi-circular shape without anchor area of identical is manufactured on the glass sheet;
(11) by the sheet glass Partial Resection of semicircle column type cavity side so that the edge of sheet glass cutting side to semicolumn Distance of the distance of type cavity less than metal anchors area in step (5) to N-type silicon chip semicircle column type cavity;
(12) seven metal electrodes in step (5), step (10) are correspondingly arranged respectively, and to seven metal electrodes End face carries out gold-gold bonding, forms seven circular metal electrodes, cylindrical cavity is formed in circular metal electrode;
(13) packaging plastic is filled from cylindrical cavity side, closes cylindrical cavity side wall;Along cylindrical cavity The direction of cross section is cut off to N-type silicon chip and sheet glass, retains cylindrical cavity and seven annular metal electrodes, by N Two corroding electrodes excision of type silicon chip, while expose the both ends of cylindrical cavity along its length, when measuring, by electricity Conductivity sensor is immersed in seawater, and seawater can be flowed into cavity from the both ends of cylindrical cavity, and the cylindrical cavity is conductance The conductance cell of rate sensor.
The present invention is further arranged to:In the step (1), the rectangular area (spreading window) that is exposed among silicon chip Narrower in width, about in 5 microns.
The present invention is further arranged to:In the step (2), using diffusion technique, boron doping is carried out at window to spreading, Because diffusion has the characteristics of isotropic, while again because the narrower in width of diffusion window, the p type diffused layer of generation are approximately One semi-cylindrical.
The present invention is further arranged to:In the step (3), photoresist is removed first, respectively in p type diffused layer upper end Face and N-type silicon chip lower surface make a corroding electrode, and the corroding electrode of p type diffused layer is located at p type diffused layer upper surface, along partly One end of cylindrical p type diffused layer length direction, the corroding electrode of N-type silicon chip are located at N-type silicon chip lower surface and p type diffused layer Corroding electrode align in vertical direction;Then it is overall to immerse in TMAH solution, using PN junction etch stop technology, in PN Applying reverse biased between knot, the positive voltage for making to apply in N-type silicon chip is higher than passivation potential, and p type diffused layer is at open circuit potential, So as to which N-type silicon chip is passivated without being corroded, p type diffused layer is etched to be terminated with N-type silicon chip junction, corrosion.
The present invention is further arranged to:In the step (4), N-type silicon chip upper surface is aoxidized using oxidation technology, Generation layer of silicon dioxide is connected as insulating barrier, silicon dioxide layer with the upper surface of the N-type silicon chip, silicon dioxide layer and N Type silicon chip forms dielectric substrate together.
The present invention is further arranged to:In the step (5), metal electrode is made using metal miromaching, Metal material is using gold.
The present invention is further arranged to:In step (6)-(11), the sheet glass is using silicon chip cutting, si-glass The step of bonding, high-temperature molding, corrosion of silicon, is fabricated to, the metal electrode of seven on the sheet glass semi-circular shape use with N-type silicon chip identical technique, material and step manufacture, the semicolumn cavity of sheet glass, semicircular ring metal electrode and N-type silicon chip Semicolumn cavity, the size of semicircular ring metal electrode and position are all identical, it is unique unlike, the metal electrode of sheet glass without Metal anchors area, and one end of the metal electrode of N-type silicon chip carries metal anchors area.
The present invention is further arranged to:In the step (12), N-type silicon chip and sheet glass pass through gold-gold bonding technique phase Even, due in the step (11), entering to the segment glass chip architecture for corresponding to N-type silicon chip metal anchors zone position on sheet glass Go excision, the metal anchors area of N-type silicon chip is after the completion of the step (12), exposed to outside, convenient drawing with external circuit Line is connected.
Compared with prior art, a kind of seven-electrode conductivity sensing based on MEMS si-glass techniques provided by the invention The manufacture method of device, there is manufacture method to be simple and convenient to operate, that machining accuracy is high, processing cost is low, can be mass-produced etc. is all More advantages, while using the conductivity sensor of MEMS process technologies manufacture, also with small volume, it is low in energy consumption, be easy to and electronics The characteristics of circuit realiration interacts, is suitably applied automatic, online, long-term, continuous, multi-platform, networking oceanographic observation.
The above is only the general introduction of technical solution of the present invention, in order to be better understood upon the technological means of the present invention, under With reference to accompanying drawing, the invention will be further described in face.
Brief description of the drawings
Fig. 1 is the profile of the N-type silicon chip of silicon chip;
Fig. 2 is silicon chip profile of the covering photoresist as mask;
Fig. 3 is silicon chip top view of the covering photoresist as mask;
Fig. 4 is the silicon chip profile of formation p type diffused layer after progress p-type doping;
Fig. 5 is the N-type silicon chip profile after deposit corroding electrode;
Fig. 6 is the N-type silicon chip top view after deposit corroding electrode;
Fig. 7 is the N-type silicon chip bottom view after deposit corroding electrode;
Fig. 8 is the N-type silicon chip profile after corrosion p type diffused layer;
Fig. 9 is the N-type silicon chip profile after oxidation;
Figure 10 is the N-type silicon chip profile after 7 test electrodes of deposit;
Figure 11 is the N-type silicon chip top view after 7 test electrodes of deposit;
Figure 12 is the profile of the substrate silicon chip of sheet glass;
Figure 13 is the profile after the base silicon piece cutting of sheet glass;
Figure 14 is the substrate silicon chip of sheet glass and the profile after sheet glass anode linkage;
Figure 15 is the profile after the heating of sheet glass high temperature;
Figure 16 is after the substrate silicon chip of sheet glass removes, to deposit metal electrode and cut off the profile after right side structure;
After the substrate silicon chip that Figure 17 is sheet glass b removes, deposit metal electrode and cut off the top view after right side structure;
Figure 18 is the seven-electrode conductivity sensor profile after gold-gold bonding.
Embodiment
Make further describe in detail to the present invention below in conjunction with the accompanying drawings.
As Fig. 1~14 show a kind of manufacture method of the seven-electrode conductivity sensor based on MEMS si-glass techniques, Comprise the following steps:
(1) as shown in Figures 1 to 3, photoresist 2a is deposited on N-type silicon chip 101a and carries out photoetching, makes N-type silicon chip 101a's Centre exposes a rectangular area as diffusion window 3a, diffusion window 3a narrower in width, about in 5 microns;
(2) as shown in figure 4, using the photoresist 2a in step (1) as mask, using diffusion technique, the shape from step (1) Into diffusion window 3a to N-type silicon chip carry out boron doping, because diffusion has the characteristics of isotropic, while again because spreading Window 3a narrower in width, it is seemingly a semi-cylindrical in the p type diffused layer 4a that N-type silicon chip 101a is internally formed;
(3) as shown in figures 5-8, photoresist 2a is removed first, respectively in p type diffused layer 4a upper surfaces and N-type silicon chip 101a lower surfaces make corroding electrode a 5a and 6a for being used to corrode, corroding electrode 5a surrounding, semi-cylindrical p type diffused layer 4a upper surface covering layer of oxide layer 501a is as protective layer, and protection corroding electrode 5a is in corrosion process without departing from p-type Diffusion layer 4a;The corroding electrode 5a of the p type diffused layer 4a, spread positioned at p type diffused layer 4a upper surfaces, along semi-cylindrical p-type One end of layer 4a length directions;The corroding electrode 6a of the N-type silicon chip 101a is located at N-type silicon chip 101a lower surfaces, spread with p-type Layer 4a corroding electrode 5a aligns in vertical direction;Then N-type silicon chip is immersed in TMAH solution, it is rotten using PN junction self-stopping technology Erosion technology, applies reverse biased between PN junction, and the positive voltage for making to apply on N-type silicon chip 101a is higher than passivation potential, p type diffused layer 4a is at open circuit potential, and so as to which N-type silicon chip 101a is passivated without being corroded, p type diffused layer 4a is corroded until eroding to N At type silicon chip 101a, corrosion terminates;Because corrosion money p type diffused layer 4a is in semi-cylindrical, semicircle column type sky will be formed after corrosion Chamber 7a;
(4) as shown in figure 9, being aoxidized using oxidation technology to N-type silicon chip 101a upper surfaces, a thin layer of two are generated Silica 102a is connected as insulating barrier, the silicon dioxide layer 102a with the upper surface of the N-type silicon chip 101a, silica Layer 102a and N-type silicon chip 101a composition dielectric substrates 1a;
(5) as shown in Figure 10~11, seven semi-circular shape metal electrode 8a (bags are made using metal miromaching Include 801a~807a), metal material is using gold;Seven metal electrode 8a (including 801a~807a) and the step (4) In dielectric substrate 1a upper surface be connected;Each metal electrode 801a~807a is horizontal all along semi-cylindrical cavity 7a semicircle Cross-wise direction deposits, and metal electrode 801a~807a is in semicircular ring shape on the inside of cavity 7a, and each metal electrode 801a~ 807a both ends all stretch out a segment distance from semicircle column type cavity 7a edge along the direction parallel with cavity diameter, Wherein the end of one end also respectively carries a square metal anchors area 9 (including 901~907), and metal anchors area 9 is used for metal electricity The lead of pole 801a~807a and outer treatment circuit connects;Seven metal electrode 801a~807a grow along semicolumn cavity 7a Direction arrangement is spent, is parallel to each other between electrode and electrode, position is located at outermost two electrodes 801a and 807a for ground connection electricity Pole, it is galvanic electrode positioned at a most middle electrode 804a, remaining four electrodes 802a, 803a, 805a and 806a are voltage Electrode, the adjacent voltage electrode of each two (802a and 803a, 805a and 806a) be a pair, using centre galvanic electrode 804a as Central point, the pair of grounding electrode 801a and 807a and two couple of voltage electrode 802a and 803a, 805a and 806a are along cavity 7a Length direction is symmetrical arranged;Described two grounding electrode 801a and 807a are identical with one galvanic electrode 804a sizes, institute It is identical with 806a sizes to state four voltage electrodes 802a, 803a, 805a, wherein, all electrode 801a~807a equal length, Voltage electrode 802a, 803a, 805a and 806a width are thinner, galvanic electrode 804a and grounding electrode 801a and 807a width It is wider.
(6) as shown in Figure 12~15, cutting 10, substrate silicon chip 101b and sheet glass on the substrate silicon chip 101b of sheet glass 1b is bonded, sheet glass expansion molding under high temperature, forms the cavity 7b of semicircle column type, rotten to glass using high to silicon slice corrosion The low corrosive agent of corrosion is corroded, and substrate silicon chip 101b is eroded, and retains glass chip architecture.
(7) as shown in Figure 16~17, repeat step (5), seven semi-circular shape metal electrode 8b (bags are manufactured on the glass sheet Include 801b~807b), semicolumn cavity 7b, semicircular ring metal electrode 8b (including 801b~807b) and the N-type silicon chip of sheet glass Semicolumn cavity 7a, semicircular ring metal electrode 8a (including 801a~807a) size and position it is all identical, it is unique different Be, the metal electrode 8b (including 801b~807b) of sheet glass without metal anchors area, and the metal electrode 8a of N-type silicon chip (including 801a~807a) one end carry metal anchors area 9 (including 901~907);Metal anchors in N-type silicon chip will be corresponded on sheet glass A part of barrier structure excision above area 9 (including 901~907);
(8) as shown in Figure 10~11, Figure 16~18, by seven semi-circular shape metal electrode 8a of N-type silicon chip (including 801a ~807a) and sheet glass seven semi-circular shape metal electrode 8b (including 801b~807b), and semicolumn cavity 7a and 7b Alignment, gold-gold bonding is carried out to the end face of metal electrode, forms complete cylindrical cavity 7 and seven circular metal electrodes 8; Due in the step (7), the part-structure to corresponding to silicon chip metal anchors area 9 (including 901~907) position on sheet glass Cut off, the metal anchors area 9 (including 901~907) of N-type silicon chip is after the completion of the step (7), exposed to outside, side Just it is connected with the lead of external circuit.
(9) si-glass piece is cut off along the direction of the cross section of cylindrical cavity 7, retains the He of cylindrical cavity 7 Seven circular metal electrodes 8, silicon chip a two corroding electrodes 5a, 6a are cut off, while make cylindrical cavity 7 along its length Both ends expose, and from side fill packaging plastic, make cylindrical cavity 7 formed closing conductance cell.When measuring, by described in Conductivity sensor is immersed in seawater, and seawater can be flowed into cavity from the both ends of cylindrical cavity 7, and the cylindrical cavity 7 is electricity The conductance cell of conductivity sensor.
Pass through a kind of manufacturer of the seven-electrode conductivity sensor based on MEMS si-glass techniques provided by the invention Method, it is simple and easy, easy to operate, machining accuracy is high, processing cost is low, can be mass-produced, overcome tradition machinery processing skill Art manufacture seven-electrode conductivity sensor when, machining accuracy is low, difficulty of processing is big, high processing costs, be difficult in high volume make The shortcomings that making.Sensor is based on MEMS process technologies, small volume, it is low in energy consumption, be easy to realize with electronic circuit and interact, practicality By force.
General principle, the main features and advantages of the present invention have been shown and described above.The technical staff of the industry should Understand, the present invention is not limited to the above embodiments, the original for simply illustrating the present invention described in above-described embodiment and specification Reason, without departing from the spirit and scope of the present invention, various changes and modifications of the present invention are possible, these changes and improvements It all fall within the protetion scope of the claimed invention.The claimed scope of the invention is by appended claims and its equivalent circle It is fixed.

Claims (6)

  1. A kind of 1. manufacture method of the seven-electrode conductivity sensor based on MEMS si-glass techniques, it is characterised in that including with Lower step:
    (1)Photoresist is deposited in N-type silicon chip and carries out photoetching, the centre of silicon chip is exposed a rectangular area as diffusion Window;
    (2)With step(1)In photoresist as mask, from step(1)P-type is carried out at the diffusion window of middle formation to silicon chip to mix It is miscellaneous, it is internally formed the p type diffused layer of semi-cylindrical in silicon chip;
    (3)Using PN junction etch stop technology, the p type diffused layer of semi-cylindrical is corroded, forms semicircle column type cavity;
    (4)To step(3)The silicon chip upper surface of middle formation is aoxidized, and the oxide layer of formation combines to form insulation with N-type silicon chip Substrate;
    (5)In step(4)Put down in semi-circular cross-sections direction of the semicircle column type cavity upper surface of middle formation along semicircle column type cavity The metal electrode of row seven semi-circular shape of deposit, one end of each metal electrode respectively carries a metal anchors area;Seven metals Electrode is arranged all along the length direction of semicircle column type cavity, is parallel to each other between electrode, is positioned at outermost two electrodes Grounding electrode, an electrode positioned at centre is galvanic electrode, and remaining four electrode is voltage electrode, the adjacent electricity of each two Extremely a pair of piezoelectricity, the point centered on the galvanic electrode of centre, the pair of grounding electrode and two pairs of voltage electrodes are grown along cavity Degree direction is symmetrical arranged;Described two grounding electrodes are identical with one galvanic electrode size, four voltage electrode chis It is very little identical, wherein, the equal length of all electrodes, the width of voltage electrode is less than the width of galvanic electrode and grounding electrode;
    (6)Rectangular groove, the length and width and step of institute's fluting will be etched on the substrate silicon chip of sheet glass(2)Middle p-type diffusion Size of the layer on N-type silicon chip surface is identical;
    (7)Use sheet glass and step(6)In substrate silicon chip after obtained cutting carry out anode linkage, sheet glass and base silicon The thermal coefficient of expansion of piece is identical;
    (8)Device after being bonded using high temperature stove heat, glass melting under high temperature action, the gas in rectangular recess are heated Produce pressure to expand, make sheet glass arch upward to form semicircle column type cavity upwards;
    (9)Substrate silicon chip is eroded using selective corrosion agent, retains glass chip architecture;
    (10)Deposit and step on the glass sheet(5)The metal electrode of seven semi-circular shape without anchor area of identical;
    (11)By the sheet glass Partial Resection of semicircle column type cavity side so that the edge of sheet glass cutting side is empty to semicircle column type The distance of chamber is less than step(5)Middle metal anchors area to N-type silicon chip semicircle column type cavity distance;
    (12)By step(5), step(10)In seven metal electrodes be correspondingly arranged respectively, and to the end face of seven metal electrodes Gold-gold bonding is carried out, seven circular metal electrodes is formed, cylindrical cavity is formed in circular metal electrode;
    (13)Packaging plastic is filled from cylindrical cavity side, closes cylindrical cavity side wall;Along the transversal of cylindrical cavity The direction in face is cut off to N-type silicon chip and sheet glass, retains cylindrical cavity and seven annular metal electrodes, by N-type silicon Two corroding electrodes excision of piece, while expose the both ends of cylindrical cavity along its length, when measuring, by electrical conductivity Sensor is immersed in seawater, and seawater can be flowed into cavity from the both ends of cylindrical cavity, and the cylindrical cavity is that electrical conductivity passes The conductance cell of sensor.
  2. A kind of 2. manufacturer of seven-electrode conductivity sensor based on MEMS si-glass techniques according to claim 1 Method, it is characterised in that:The step(1)In, the width of the rectangular area exposed among silicon chip is less than or equal to 5 microns.
  3. A kind of 3. manufacturer of seven-electrode conductivity sensor based on MEMS si-glass techniques according to claim 1 Method, it is characterised in that:The step(2)In, using diffusion technique, to carrying out boron doping at diffusion window.
  4. A kind of 4. manufacturer of seven-electrode conductivity sensor based on MEMS si-glass techniques according to claim 1 Method, it is characterised in that:The step(3)In, photoresist is removed first, respectively under p type diffused layer upper surface and N-type silicon chip End face makes a corroding electrode, and the corroding electrode of p type diffused layer is located at p type diffused layer upper surface, spread along semi-cylindrical p-type One end of layer length direction, the corroding electrode of N-type silicon chip is located at N-type silicon chip lower surface and the corroding electrode of p type diffused layer is being hung down Nogata aligns upwards;Then it is overall to immerse in TMAH solution, using PN junction etch stop technology, apply between PN junction reverse Bias, the positive voltage for making to apply in N-type silicon chip are higher than passivation potential, and p type diffused layer is at open circuit potential, so as to N-type silicon chip quilt Without being corroded, p type diffused layer is etched to be terminated with N-type silicon chip junction, corrosion for passivation.
  5. A kind of 5. manufacturer of seven-electrode conductivity sensor based on MEMS si-glass techniques according to claim 1 Method, it is characterised in that:The step(4)In, N-type silicon chip upper surface is aoxidized using oxidation technology, generates one layer of dioxy SiClx is connected as insulating barrier, silicon dioxide layer with the upper surface of the N-type silicon chip, silicon dioxide layer group together with N-type silicon chip Into dielectric substrate.
  6. A kind of 6. manufacturer of seven-electrode conductivity sensor based on MEMS si-glass techniques according to claim 1 Method, it is characterised in that:The step(5)In, metal electrode is made using metal miromaching, metal material uses Gold.
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