CN105609631A - Phase change storage device and manufacture method thereof - Google Patents
Phase change storage device and manufacture method thereof Download PDFInfo
- Publication number
- CN105609631A CN105609631A CN201510757164.3A CN201510757164A CN105609631A CN 105609631 A CN105609631 A CN 105609631A CN 201510757164 A CN201510757164 A CN 201510757164A CN 105609631 A CN105609631 A CN 105609631A
- Authority
- CN
- China
- Prior art keywords
- phase
- transition material
- heater
- conductive
- change memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 230000008859 change Effects 0.000 title abstract description 9
- 238000003860 storage Methods 0.000 title abstract description 3
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims description 87
- 239000004020 conductor Substances 0.000 claims description 20
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 15
- 230000004888 barrier function Effects 0.000 claims description 14
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 7
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 6
- 229910010037 TiAlN Inorganic materials 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 claims description 4
- 150000001786 chalcogen compounds Chemical class 0.000 claims description 4
- 238000012856 packing Methods 0.000 claims description 4
- 229910001245 Sb alloy Inorganic materials 0.000 claims description 2
- 229910001215 Te alloy Inorganic materials 0.000 claims description 2
- 229910000927 Ge alloy Inorganic materials 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 2
- 239000012782 phase change material Substances 0.000 abstract 2
- 229910052787 antimony Inorganic materials 0.000 description 13
- 229910052714 tellurium Inorganic materials 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 9
- 229910052732 germanium Inorganic materials 0.000 description 9
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 9
- 239000007772 electrode material Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 238000005240 physical vapour deposition Methods 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000003989 dielectric material Substances 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000002955 isolation Methods 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002927 oxygen compounds Chemical class 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052798 chalcogen Inorganic materials 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 150000001787 chalcogens Chemical class 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000866 electrolytic etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 108010052322 limitin Proteins 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- NHDHVHZZCFYRSB-UHFFFAOYSA-N pyriproxyfen Chemical compound C=1C=CC=NC=1OC(C)COC(C=C1)=CC=C1OC1=CC=CC=C1 NHDHVHZZCFYRSB-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Abstract
A manufacture method of a phase change storage device comprises that a first substrate which comprises at least one access circuit and at least one first plug is provided, the first conductive plug is electrically connected with the access circuit, and a top surface of the first conductive plug is exposed; part of the first conductive plug is removed to form at least one groove; a phase change material is deposited in the groove; a heater is formed on the phase change material; and a top electrode is formed on the heater. Via the manufacture method, multiple shades can be omitted, the manufacture process is simplified, and the manufacture cost is reduced.
Description
[technical field]
The present invention is relevant a kind of storage device and manufacture method, particularly a kind of phase-change memory and manufacture thereofMethod.
[background technology]
Phase-change memory is a non-volatile random access memory. Phase-transition material in phase-change memoryCan between crystalline state is with noncrystalline state, change by applying suitable electric current. Different conditions (for example knot of phase-transition materialBrilliant, hypocrystalline or noncrystalline) represent different resistance values. Generally speaking, noncrystalline state person has higher compared to crystalline state personResistance value, therefore, throughput measuring resistance value gets final product access data.
A kind of manufacture method of known phase-change memory is as shown in Fig. 1 a to Fig. 1 d. First, on a substrate 10Make access circuit 11, then sequentially make hearth electrode 22 and heater 23 on substrate 10, and electrical with access circuit 11Connect, as shown in Figure 1a. For example, hearth electrode 22 can be electrically connected via conductive plunger 21 and access circuit 11. Can manageSeparate, between multiple conductive plungers 21, between multiple hearth electrode 22 and between multiple heater 23, there is dielectric and fill materialMaterial 31,32. Then form a phase-transition material 40 and a top electrode material 50 at the exposed surface of heater 23.
Be understandable that, phase-transition material 40 and top electrode material 50 are lighttight, therefore, and cannot be by phase transformationAlignment mark 12 under formed material 40 and top electrode material 50 defines the figure of phase-transition material 40 and top electrode material 50Case. Known manufacture method is first with photoresist layer 61 rough definition one perforate 61a, to open phase-transition material 40 and topElectrode material 50, it is visible making the alignment mark 12 under phase-transition material 40 and top electrode material 50, as shown in Figure 1 b. ItAfter sequentially form dielectric layer 33 and photoresist layer 62, then by alignment mark 12 explication photoresist layers 62, as shown in Fig. 1 c. ?After, remove partial phase change formed material 40 and top electrode material 50 can form defined pattern according to the pattern of photoresist layer 62Change phase-transition material 40 and top electrode material 50, as shown in Figure 1 d.
From the above, the manufacture method of known phase-change memory needs multiple tracks shade, thereby significantly increases systemMake operation and manufacturing cost. In view of this processing procedure, how to simplify phase-change memory is the order that the current utmost point need be made great effortsMark.
[summary of the invention]
The invention provides a kind of phase-change memory and manufacture method thereof, it is first to form phase-transition material to form and add againHot device, on phase-transition material, therefore can reduce multiple tracks shade, to simplify manufacturing process and to reduce manufacturing cost.
The manufacture method of the phase-change memory of one embodiment of the invention comprises: a substrate is provided, and it comprises at least oneAccess circuit and at least one the first conductive plunger, wherein, the first conductive plunger and access circuit are electrically connected, and the first conductionOne top surface of connector comes out; Remove part the first conductive plunger, to form at least one groove; Deposit a phase-transition materialIn groove; Form a heater on phase-transition material; And form a top electrode on heater.
The phase-change memory of another embodiment of the present invention comprises a substrate and at least one memory cell. Substrate bagContaining an access circuit. Memory cell is arranged at substrate and comprises a hearth electrode, a phase-transition material, a heater and a top electricityThe utmost point. Hearth electrode and access circuit are electrically connected. Phase-transition material is arranged on hearth electrode, and is electrically connected with hearth electrode. HeatingDevice is arranged on phase-transition material, and is electrically connected with phase-transition material. Top electrode is arranged on heater, and with heater electricityProperty connects.
Coordinate appended graphic explanation in detail by specific embodiment below, when being easier to understand object of the present invention, skillArt content, feature and effect of reaching thereof.
[brief description of the drawings]
Fig. 1 a to Fig. 1 d is a schematic diagram, shows the manufacturing step of known phase-change memory.
Fig. 2 a to Fig. 2 i is a schematic diagram, shows the manufacturing step of the phase-change memory of one embodiment of the invention.
Fig. 3 a and Fig. 3 b are a schematic diagram, show the manufacture step of the heater of the phase-change memory of one embodiment of the inventionSuddenly.
Fig. 4 a to Fig. 4 e is a schematic diagram, shows the manufacture step of the heater of the phase-change memory of another embodiment of the present inventionSuddenly.
[symbol description]
10 substrates
11 access circuits
12 alignment marks
21 conductive plungers
22 hearth electrodes
23 heaters
31,32 dielectric fill material
33 dielectric layers
40 phase-transition materials
50 top electrode materials
61,62 photoresist layers
61a perforate
210 substrates
211 grids
212 source electrodes
213 drain electrodes
214 isolation structures
220 dielectric layers
221,222 first conductive plungers
223,252,254 barrier layers
224 grooves
230 phase-transition materials
240,250 dielectric layers
241 heaters
241a conductive material
251 top electrodes
253 second conductive plungers
261～264 shades
261a～264a through hole
270 sacrifice layers
271 packing materials
[detailed description of the invention]
Various embodiments of the present invention below will be described in detail in detail, and coordinate graphic as illustrating. Except the plurality of detailed description,The present invention also can be performed in other embodiment widely, any described embodiment easily substitute, amendment, equivalence change allBe as the criterion within the scope of the present invention, and with claim. In the description of description, in order to make reader to the present inventionThere is more complete understanding, many specific detail are provided; But the present invention may be before clipped or whole specific detailPut, still can implement. In addition, well-known step or element are not described in details, the present invention are formed not avoidingNecessary restriction. In graphic, same or similar element will represent with identical or simileys. Pay special attention to, only graphicFor the use of signal, not size or the quantity of representation element reality, some details may not drawn completely, in the hope of graphic letterClean.
Please refer to Fig. 2 a to Fig. 2 i, so that the manufacture method of phase-change memory of one embodiment of the invention to be described. First,One substrate 210 is provided, and it comprises an access circuit. For example, substrate 210 can be silicon substrate, but is not limited to this, and other is applicable toMaterial also can be used as substrate 210, for example ceramic material, organic material or glass material. Access circuit can comprise a switch unitPart, for example metal oxide semiconductcor field effect transistor (MetalOxideSemiconductorFieldEffectTransistor, MOSFET), it comprises grid 211, source electrode 212 and drain electrode 213. In an embodiment, adjacent drain electrode 213Between have an isolation structures 214. For example, isolation structures 214 is with shallow isolating trough method (shallowtrenchIsolation, STI) be made, or available selective oxidation method (localoxidation, LOCOS) is made. By controlThe grid voltage of MOSFET can be controlled the read-write of each memory cell. Be understandable that the source electrode 212 of MOSFET and leakageThe utmost point 213 can be respectively by running through the first conductive plunger 221,222 and outside electric connection of dielectric layer 220. In other words, first leadThe top surface of electric plug 221,222 is exposed to the surface of dielectric layer 220. In an embodiment, the material of dielectric layer 220 can be oxygenCompound or nitride, for example silica, silicon oxynitride, silicon nitride or other dielectric material; The first conductive plunger 221,222Material can be tungsten, titanium, tantalum, titanium nitride, tantalum nitride, TiAlN or titanium silicon nitride. Structure shown in Fig. 2 a can be with existingManufacture of semiconductor technology is realized, and does not repeat them here.
Please refer to Fig. 2 b, with Wet-type etching skills such as the dry-etching such as electrolytic etching or plasma etching technology or chemical etchingsArt removes part the first conductive plunger 221,222, to form at least one groove 224. Be understandable that, insert according to the first conductionPlug 221,222 and the difference of dielectric layer 220 materials, select suitable etching technique can etching the first conductive plunger 221,222 and have higher selection ratio when dielectric layer 220, more specifically, select etching the first conductive plunger 221,222 to compare etchingThe engraving method that dielectric layer 220 is fast, that is the speed that removes the first conductive plunger 221,222 is greater than the speed that removes dielectric layer 220Rate, preferably situation is that the speed that removes the first conductive plunger 221,222 is far longer than the speed that removes dielectric layer 220.
Please refer to Fig. 2 c, then, utilize physical vapour deposition (PVD) (physicalvapordeposition, PVD), chemistryVapour deposition (chemicalvapordeposition, CVD) or ald (atomiclayerdeposition,Etc. ALD) deposition techniques one phase-transition material 230 is in groove 224. Again with cmp (chemical-mechanicalPolish, CMP) etc. technology planarization phase-transition material 230, to expose dielectric layer 220, as shown in Figure 2 d. In an embodimentIn, phase-transition material 230 can be comprise germanium, antimony and tellurium at least one of them chalcogen compound (chalcogenide) or closeGold. Chalcogen compound comprises the compound with more positive electricity element or foundation. Chalcogen compound alloy comprises chalcogen chemical combinationThing and other materials are as combinations such as transition metal. In addition, following alloy also can be used as phase-transition material, for example gallium/antimony, germanium/antimony,Indium/antimony, antimony/tellurium, germanium/tellurium, germanium/antimony/tellurium, indium/antimony/tellurium, gallium/selenium/tellurium, tin/antimony/tellurium, indium/antimony/germanium, silver/indium/antimony/tellurium,Germanium/tin/antimony/tellurium, germanium/antimony/selenium/tellurium and tellurium/germanium/antimony/sulphur etc., wherein preferably is germanium/antimony/tellurium alloy family.
Please refer to Fig. 2 e, then, form a heater 241 on phase-transition material 230. Form the method for heater 241Explanation after holding. In an embodiment, the material of heater 241 can be tungsten, titanium, tantalum, titanium nitride, tantalum nitride, TiAlN or nitrogenSiClx titanium. It should be noted that all there is a phase-transition material 230 on each first conductive plunger 221,222, but, heater241 are only formed on the phase-transition material 230 of corresponding drain electrode 213. In the embodiment shown in Fig. 2 e, connect the of drain electrode 213One conductive plunger 222 can be considered a hearth electrode.
Then, form a top electrode on heater 241. For example, first form a dielectric layer 250 to cover heater241. In an embodiment, the material of dielectric layer 250 can be oxide or nitride, for example silica, silicon oxynitride, nitrogenizeSilicon or other dielectric material. Then, then according to the pattern of shade 261, utilize suitable etching technique to form and run through dielectric layer 250Through hole 261a, to expose heater 241, as shown in Fig. 2 f. Then, utilize the deposition techniques conduction materials such as PVD, CVD or ALDExpect in through hole 261a, conductive material and heater 241 be electrically connected, then with technology planarize conductive material such as CMP with cruellyExpose dielectric layer 250, form top electrode 251 as shown in Figure 2 g.
The manufacture method of phase-change memory of the present invention more comprises and forms at least one the second conductive plunger, itself and accessCircuit (for example source electrode 212) is electrically connected. For example, according to the pattern of shade 262, utilize suitable etching technique to form and pass throughWear the through hole 262a of dielectric layer 240,250, and remove selected phase-transition material 230, to expose the first conductive plunger 221,As shown in Fig. 2 h. Then, utilize the deposition techniques conductive materials such as PVD, CVD or ALD in through hole 262a, make conductive material andOne conductive plunger 221 is electrically connected, then with technology planarize conductive material such as CMP to expose dielectric layer 250, form as figureThe second conductive plunger 253 shown in 2i. In an embodiment, the material of the second conductive plunger 253 can be tungsten, titanium, tantalum, nitrogenChange titanium, tantalum nitride, TiAlN or titanium silicon nitride.
Below the method for heater 241 is made in explanation. A kind of step of making heater 241 is as Fig. 3 a and Fig. 3 b instituteShow. First, form a dielectric layer 240 to cover phase-transition material 230. In an embodiment, the material of dielectric layer 240 can be oxygenCompound or nitride, for example silica, silicon oxynitride, silicon nitride or other dielectric material. Then, then according to shade 263Pattern, utilizes suitable etching technique to form the through hole 263a that runs through dielectric layer 240, to expose partial phase change formed material 230,In other words, the area of the phase-transition material 230 coming out is less than the top surface of phase-transition material 230, as shown in Figure 3 a. Connect, utilize the deposition techniques one conductive material 241a such as PVD, CVD or ALD in through hole 263a, make conductive material 241a and phase transformationFormed material 230 is electrically connected, as shown in Figure 3 b. Finally, with technology planarize conductive material 241a such as CMP to expose dielectric layer240, form structure as shown in Figure 2 e, and conductive material 241a in through hole 263a can be used as heater 241.
Another kind of step of making heater 241 is as shown in Fig. 4 a to Fig. 4 e. First, form a dielectric layer 240 to coverPhase-transition material 230, then form a sacrifice layer 270 on dielectric layer 240, as shown in Fig. 4 a. In an embodiment, dielectric layer240 material can be oxide or nitride, for example silica, silicon oxynitride, silicon nitride or other dielectric material; Sacrifice layer270 material can be monoxide. Then,, according to the pattern of shade 264, utilize suitable etching technique to form and run through sacrifice layer270 through hole 264a, to expose dielectric layer 240, as shown in Figure 4 b. Then, form a packing material 271 in through hole 264a'sSidewall and bottom, so that footpath dwindles within through hole 264a, as shown in Fig. 4 c. In an embodiment, packing material 271 can be oxidationThing or nitride, for example silica, silicon oxynitride, silicon nitride or other dielectric material. Then the through hole, dwindling according to internal diameter264a, removes part dielectric layer 240, to expose partial phase change formed material 230, in other words, the phase-transition material coming out230 area is less than the top surface of phase-transition material 230, as shown in Fig. 4 d. Then, utilize the deposition techniques such as PVD, CVD or ALDOne conductive material 241a, in through hole 264a, is electrically connected conductive material 241a and phase-transition material 230, as shown in Fig. 4 e.Finally,, form structure as shown in Figure 2 e, and lead to expose dielectric layer 240 with technology planarize conductive material 241a such as CMPConductive material 241a in the 264a of hole can be used as heater 241.
The person of should be noted, the method for making heater 241 is not limited to above-mentioned two kinds of embodiment, the less chi of other existing makingThe method of very little heater also can be applicable to the manufacture method of phase-change memory of the present invention. In addition, heater 241 is not limitIn forming with same material, it also can be formed so that different materials is stacking. For example, near phase-transition material 230 1 sidesSection formed with the material with higher electric resistivity, for example tantalum nitride; The section of another opposite side is lower to haveThe material of resistivity forms, for example titanium nitride. Can promote the efficiency of heating surface of heater according to this structure.
In the embodiment shown in Fig. 2 a to Fig. 2 i, sidewall and the bottom of the first conductive plunger 221,222 comprise a screenBarrier layer 223; The sidewall of phase-transition material 230 comprises a barrier layer 223; The sidewall of top electrode 251 and bottom comprise a barrierLayer 252; The sidewall of the second conductive plunger 253 and bottom comprise a barrier layer 254. Barrier layer 223,252,254 can provide expansionThe function of loose barrier, with the pollution that element was caused that prevents from being spread by other metal level. For example, phase-transition material230 in the process of heating repeatedly, and barrier layer 223 can prevent that phase-transition material 230 from causing the change of composition to external diffusion, orDielectric layer 220 materials cause the pollution of phase-transition material 230 toward interior diffusion, thereby improve the reliability of phase-change memory.Barrier layer 223,252,254 can be realized with existing manufacture of semiconductor technology. For example, top electrode can formedBefore 251, first deposition barrier layer 252 is in through hole 261a, and deposits conductive material, in through hole 261a, so gets final product shape more afterwardsBecome the structure of coated top electrode 251 sidewalls of barrier layer 252 and bottom. In an embodiment, the material of barrier layer 223,252,254Material can be titanium, titanium nitride, tantalum nitride or tantalum.
Please refer to Fig. 2 i, the phase-change memory of one embodiment of the invention comprises a substrate 210 and at least one is depositedStorage unit. Substrate 210 comprises an access circuit, for example, comprise grid 211, source electrode 212 and drain electrode 213. Memory cell arrangesIn substrate 210, and each memory cell comprises a hearth electrode (the first conductive plunger 222), a phase-transition material 230, a heatingDevice 241 and a top electrode 251. Hearth electrode (the first conductive plunger 222) is electrically connected with access circuit. Phase-transition material 230Be arranged on hearth electrode, and be electrically connected with hearth electrode. Heater 241 is arranged on phase-transition material 230, and with phase change materialMaterial 230 is electrically connected. Top electrode 251 is arranged on heater 241, and is electrically connected with heater 241. In an embodiment,Memory cell more comprises one second conductive plunger 253, and itself and access circuit are electrically connected. In an embodiment, memory cell moreComprise a barrier layer 223,252,254, it is arranged at hearth electrode, phase-transition material 230, top electrode 251 and the second conduction and insertsAt least sidewall of one of them of plug 253. The detailed structure of phase-change memory of the present invention as previously mentioned, no longer superfluous at thisState.
Comprehensively above-mentioned, phase-change memory of the present invention and manufacture method thereof are first to form phase-transition material to form and add againHot device is on phase-transition material, and phase-transition material is to be filled in to remove the groove producing after part the first conductive plunger, because ofThis can reduce the step of multiple tracks shade, and simplifies manufacturing process and reduce manufacturing cost. In addition, the first conductive plunger can be directAs hearth electrode, therefore, reduce by reducing the thickness of the first conductive plunger the impact that resistance capacitance postpones (RCdelay).
Above-described embodiment is only for technological thought of the present invention and feature are described, its object makes to have the knack of this skillThe personage of skill can understand within the present invention and to hold and to implement according to this, when can not with restriction the scope of the claims of the present invention, generallyThe equalization of doing according to disclosed spirit changes or modifies, and must be encompassed in the scope of the claims of the present invention.
Claims (10)
1. a manufacture method for phase-change memory, is characterized in that, comprises:
One substrate is provided, and it comprises at least one access circuit and at least one the first conductive plunger, wherein this first conductive plungerBe electrically connected with this access circuit, and a top surface of this first conductive plunger comes out;
Remove this first conductive plunger of part, to form at least one groove;
Deposit a phase-transition material in this groove;
Form a heater on this phase-transition material; And
Form a top electrode on this heater.
2. the manufacture method of phase-change memory as claimed in claim 1, is characterized in that, more comprises:
After this top electrode of formation is on this heater, forms at least one the second conductive plunger and this access circuit and electrically connectConnect.
3. the manufacture method of phase-change memory as claimed in claim 1, is characterized in that, forms the step of this heaterComprise:
Form a dielectric layer to cover this phase-transition material;
Form a through hole and run through this dielectric layer, to expose this phase-transition material of part;
Deposit a conductive material in this through hole, wherein this conductive material and this phase-transition material are electrically connected, using as this heatingDevice; And
This conductive material of planarization is to expose this dielectric layer.
4. the manufacture method of phase-change memory as claimed in claim 1, is characterized in that, forms the step of this heaterComprise:
Form a dielectric layer to cover this phase-transition material;
Form a sacrifice layer in this dielectric layer;
Form a through hole and run through this sacrifice layer, to expose this dielectric layer;
Form a packing material in the sidewall of this through hole, to dwindle footpath within this through hole;
According to this through hole, remove this dielectric layer of part, to expose this phase-transition material of part;
Deposit a conductive material in this through hole, wherein this conductive material and this phase-transition material are electrically connected, using as this heatingDevice; And
This conductive material of planarization is to expose this dielectric layer.
5. the manufacture method of phase-change memory as claimed in claim 1, is characterized in that,
This first conductive plunger, this phase-transition material and this top electrode at least one of them sidewall comprise a barrier layer.
6. the manufacture method of phase-change memory as claimed in claim 1, is characterized in that,
The material of this first conductive plunger comprises tungsten, titanium, tantalum, titanium nitride, tantalum nitride, TiAlN or titanium silicon nitride; This phase transformationFormed material comprises at least one of them chalcogen compound or alloy of germanium, antimony and tellurium; And the material of this heater comprise tungsten,Titanium, tantalum, titanium nitride, tantalum nitride, TiAlN or titanium silicon nitride.
7. a phase-change memory, is characterized in that, comprises:
One substrate, it comprises an access circuit; And
At least one memory cell, it is arranged at this substrate, and wherein this memory cell comprises:
One hearth electrode, itself and this access circuit is electrically connected;
One phase-transition material, it is arranged on this hearth electrode, and is electrically connected with this hearth electrode;
One heater, it is arranged on this phase-transition material, and is electrically connected with this phase-transition material; And
One top electrode, it is arranged on this heater, and is electrically connected with this heater.
8. phase-change memory as claimed in claim 7, is characterized in that, this hearth electrode, this phase-transition material and shouldTop electrode at least one of them sidewall comprises a barrier layer.
9. phase-change memory as claimed in claim 7, is characterized in that, this memory cell more comprises one second conduction and insertsPlug is electrically connected with this access circuit.
10. phase-change memory as claimed in claim 9, is characterized in that, the sidewall of this second conductive plunger and the endPortion comprises a barrier layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510757164.3A CN105609631B (en) | 2015-11-09 | 2015-11-09 | Phase-change memory and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510757164.3A CN105609631B (en) | 2015-11-09 | 2015-11-09 | Phase-change memory and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105609631A true CN105609631A (en) | 2016-05-25 |
| CN105609631B CN105609631B (en) | 2018-11-02 |
Family
ID=55989387
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510757164.3A Active CN105609631B (en) | 2015-11-09 | 2015-11-09 | Phase-change memory and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105609631B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109119350A (en) * | 2017-06-23 | 2019-01-01 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof, the method for measuring resistance |
| CN109509835A (en) * | 2018-12-12 | 2019-03-22 | 江苏时代全芯存储科技有限公司 | The method for manufacturing phase-change memory |
| CN109545963A (en) * | 2018-12-12 | 2019-03-29 | 江苏时代全芯存储科技有限公司 | The method for manufacturing phase-change memory |
| CN110098325A (en) * | 2019-05-23 | 2019-08-06 | 江苏时代全芯存储科技股份有限公司 | Phase-change memory and its manufacturing method |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200832771A (en) * | 2007-01-25 | 2008-08-01 | Ind Tech Res Inst | Phase change memory device and method of fabricating the same |
| CN101237026A (en) * | 2007-01-31 | 2008-08-06 | 旺宏电子股份有限公司 | Memory cell having a side electrode |
| CN101882627A (en) * | 2009-05-06 | 2010-11-10 | 中芯国际集成电路制造(上海)有限公司 | Phase change memory device and manufacturing method thereof |
| US20110266511A1 (en) * | 2010-04-29 | 2011-11-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Phase Change Memory Device with Air Gap |
| CN102237492A (en) * | 2010-04-29 | 2011-11-09 | 中芯国际集成电路制造(上海)有限公司 | Formation method for phase-change memory unit |
| CN102694119A (en) * | 2011-03-22 | 2012-09-26 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing phase-change random access memory |
| US20130256621A1 (en) * | 2012-03-29 | 2013-10-03 | Samsung Electronics Co., Ltd. | Phase-change memory devices |
| CN104851976A (en) * | 2015-05-13 | 2015-08-19 | 宁波时代全芯科技有限公司 | Phase-change memory and manufacturing method thereof |
-
2015
- 2015-11-09 CN CN201510757164.3A patent/CN105609631B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200832771A (en) * | 2007-01-25 | 2008-08-01 | Ind Tech Res Inst | Phase change memory device and method of fabricating the same |
| CN101237026A (en) * | 2007-01-31 | 2008-08-06 | 旺宏电子股份有限公司 | Memory cell having a side electrode |
| CN101882627A (en) * | 2009-05-06 | 2010-11-10 | 中芯国际集成电路制造(上海)有限公司 | Phase change memory device and manufacturing method thereof |
| US20110266511A1 (en) * | 2010-04-29 | 2011-11-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Phase Change Memory Device with Air Gap |
| CN102237492A (en) * | 2010-04-29 | 2011-11-09 | 中芯国际集成电路制造(上海)有限公司 | Formation method for phase-change memory unit |
| CN102694119A (en) * | 2011-03-22 | 2012-09-26 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing phase-change random access memory |
| US20130256621A1 (en) * | 2012-03-29 | 2013-10-03 | Samsung Electronics Co., Ltd. | Phase-change memory devices |
| CN104851976A (en) * | 2015-05-13 | 2015-08-19 | 宁波时代全芯科技有限公司 | Phase-change memory and manufacturing method thereof |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109119350A (en) * | 2017-06-23 | 2019-01-01 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof, the method for measuring resistance |
| CN109509835A (en) * | 2018-12-12 | 2019-03-22 | 江苏时代全芯存储科技有限公司 | The method for manufacturing phase-change memory |
| CN109545963A (en) * | 2018-12-12 | 2019-03-29 | 江苏时代全芯存储科技有限公司 | The method for manufacturing phase-change memory |
| CN109509835B (en) * | 2018-12-12 | 2022-09-23 | 北京时代全芯存储技术股份有限公司 | Method for manufacturing phase change memory |
| CN110098325A (en) * | 2019-05-23 | 2019-08-06 | 江苏时代全芯存储科技股份有限公司 | Phase-change memory and its manufacturing method |
| CN110098325B (en) * | 2019-05-23 | 2022-09-23 | 北京时代全芯存储技术股份有限公司 | Phase change memory and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105609631B (en) | 2018-11-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8964442B2 (en) | Integrated circuit 3D phase change memory array and manufacturing method | |
| TWI427743B (en) | Resistance variable memory cell structures and methods | |
| CN205542903U (en) | Non -volatile ic memory unit and resistive random access storage structure | |
| KR100650753B1 (en) | Phase change ram device and method of manufacturing the same | |
| CN105609631A (en) | Phase change storage device and manufacture method thereof | |
| CN100578753C (en) | Memory element and manufacturing method thereof | |
| CN106206938B (en) | Phase-change memory and its manufacturing method | |
| US9812641B2 (en) | Non-volatile memory device and methods for fabricating the same | |
| CN106206639B (en) | Phase change memory storage and its manufacturing method with needle-shaped junction | |
| CN104934531A (en) | Method of fabricating semiconductor integrated circuit having phase-change layer | |
| CN106299112A (en) | Multi-state phase-change memory unit element and preparation method thereof | |
| CN105990392A (en) | Resistive random access memory and manufacturing method thereof | |
| CN103003942B (en) | Utilize the cross point memory of Ru/Si diode | |
| KR101124341B1 (en) | Phase change random access memory and method for fabricating the same | |
| CN105098072B (en) | The manufacture method of phase-change memory | |
| CN114792755A (en) | Phase change memory and manufacturing method thereof | |
| KR100800911B1 (en) | Method for fabricating phase change ram device | |
| CN104993049B (en) | Phase-change memory and its manufacture method | |
| KR100997785B1 (en) | Phase-change memory device and method for manufacturing the same | |
| CN105226181A (en) | Phase-change memory and manufacture method thereof | |
| KR100929730B1 (en) | Nonvolatile Memory Cell Manufacturing Method | |
| US20180374898A1 (en) | Phase-change memory cell | |
| CN106997924B (en) | Phase transition storage and its manufacturing method and electronic equipment | |
| CN109256406A (en) | Resistance variable memory device and forming method thereof | |
| CN105206745B (en) | The manufacture method of phase-change memory |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20170531 Address after: No. 188 East Huaihe Road, Huaiyin District, Jiangsu, Huaian Applicant after: Jiangsu times all core storage technology Co.,Ltd. Applicant after: BEING ADVANCED MEMORY TAIWAN LIMITED Address before: 315000 Zhejiang city of Ningbo province Yinzhou Industrial Park (New Yinzhou District Jiang Shan Zhen Zhang Yu Cun) Applicant before: NINGBO ADVANCED MEMORY TECHNOLOGY Corp. Applicant before: BEING ADVANCED MEMORY TAIWAN LIMITED |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: No. 601, Changjiang East Road, Huaiyin District, Huaian, Jiangsu Co-patentee after: BEING ADVANCED MEMORY TAIWAN LIMITED Patentee after: JIANGSU ADVANCED MEMORY TECHNOLOGY Co.,Ltd. Address before: 223300 No. 188 Huaihe East Road, Huaiyin District, Huaian City, Jiangsu Province Co-patentee before: BEING ADVANCED MEMORY TAIWAN LIMITED Patentee before: Jiangsu times all core storage technology Co.,Ltd. |
|
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 802, unit 4, floor 8, building 2, yard 9, FengHao East Road, Haidian District, Beijing Patentee after: Beijing times full core storage technology Co.,Ltd. Patentee after: BEING ADVANCED MEMORY TAIWAN LIMITED Address before: 223300 No. 601 East Changjiang Road, Huaiyin District, Huaian City, Jiangsu Province Patentee before: JIANGSU ADVANCED MEMORY TECHNOLOGY Co.,Ltd. Patentee before: BEING ADVANCED MEMORY TAIWAN LIMITED |
|
| CP03 | Change of name, title or address | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220919 Address after: 802, unit 4, floor 8, building 2, yard 9, FengHao East Road, Haidian District, Beijing Patentee after: Beijing times full core storage technology Co.,Ltd. Address before: Room 802, unit 4, floor 8, building 2, yard 9, FengHao East Road, Haidian District, Beijing 100094 Patentee before: Beijing times full core storage technology Co.,Ltd. Patentee before: BEING ADVANCED MEMORY TAIWAN LIMITED |
|
| TR01 | Transfer of patent right |