CN105575300A - 阵列基板的esd检测方法 - Google Patents

阵列基板的esd检测方法 Download PDF

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CN105575300A
CN105575300A CN201510943309.9A CN201510943309A CN105575300A CN 105575300 A CN105575300 A CN 105575300A CN 201510943309 A CN201510943309 A CN 201510943309A CN 105575300 A CN105575300 A CN 105575300A
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test site
array base
base palte
esd
metal layer
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CN105575300B (zh
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李亚锋
彭香艺
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Changsha HKC Optoelectronics Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to US14/912,924 priority patent/US10126343B2/en
Priority to PCT/CN2016/072776 priority patent/WO2017101205A1/zh
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Abstract

本发明提供一种阵列基板的ESD检测方法，通过在阵列基板的第一金属层上引出第一导线并连接至第一测试位点；在阵列基板的第二金属层上引出第二导线并连接至第二测试位点；当阵列基板发生ESD故障时，通过电阻检测装置测量所述第一测试位点与第二测试位点之间的电阻值；若所述第一测试位点与第二测试位点之间的电阻值为正无穷，则所述第一金属层与第二金属层之间未发生ESD；若所述第一测试位点与第二测试位点之间的电阻值在可测范围内，则所述第一金属层与第二金属层之间发生ESD；从而根据所测量的第一测试位点与第二测试位点之间的电阻值检测出阵列基板上发生ESD的位置；可快速准确地检测出阵列基板上发生ESD的位置，省时省力，同时可以节省检测成本。

Description

阵列基板的ESD检测方法
技术领域
本发明涉及显示技术领域，尤其涉及一种阵列基板的ESD检测方法。
背景技术
液晶显示装置(LiquidCrystalDisplay，LCD)具有机身薄、省电、无辐射等众多优点，得到了广泛的应用，如：移动电话、个人数字助理(PDA)、数字相机、计算机屏幕或笔记本电脑屏幕等。
现有市场上的液晶显示装置大部分为背光型液晶显示装置，其包括壳体、设于壳体内的液晶面板及设于壳体内的背光模组(Backlightmodule)。传统的液晶面板的结构是由一彩色滤光片基板(ColorFilterSubstrate)、一薄膜晶体管阵列基板(ThinFilmTransistorArraySubstrate，TFTArraySubstrate)以及一配置于两基板间的液晶层(LiquidCrystalLayer)所构成，其工作原理是通过在两片玻璃基板上施加驱动电压来控制液晶层的液晶分子的旋转，将背光模组的光线折射出来产生画面。
低温多晶硅(LowTemperaturePoly-silicon，LTPS)技术是新一代TFT基板的制造技术，与传统非晶硅(a-Si)技术的最大差异在于，低温多晶硅显示器反应速度较快，且有高亮度、高解析度与低耗电量等优点。
随着低温多晶硅半导体薄膜晶体管的发展，而且由于LTPS半导体本身超高载流子迁移率的特性，相应的面板周边集成电路也成为大家关注的焦点，并且很多人投入到SOP(SystemonPanel，系统集成于面板)的相关技术研究，并逐步成为现实。但是由于LTPS制程比较复杂，需要的工艺数目比较多，这样发生ESD(Electro-StaticDischarge，静电释放)的几率就比较大。
ESD是液晶显示屏中最常见的一种工艺故障，当发生ESD时，ESD相关的线路由于瞬间强电流而熔融，冷却后使本应不相连的金属连接在一起，从而加剧了ESD产生的损害，因此ESD检测是极其重要且非常必要的。当前ESD的检测只能通过在显微镜下寻找ESD损害处去查找，这样不仅费时费力，且成本也高。
因此，有必要提供一种阵列基板的ESD检测方法，以解决上述问题。
发明内容
本发明的目的在于提供一种阵列基板的ESD检测方法，可快速准确地检测出阵列基板上发生ESD的位置。
为实现上述目的，本发明提供一种阵列基板的ESD检测方法，包括如下步骤：
步骤1、提供待进行ESD检测的阵列基板，所述阵列基板上设有第一金属层与第二金属层，所述第一金属层通过第一导线连接至阵列基板表面的第一测试位点，所述第二金属层通过第二导线连接至阵列基板表面的第二测试位点；
步骤2、提供电阻检测装置，通过所述电阻检测装置测量所述第一测试位点与第二测试位点之间的电阻值；
若所述第一测试位点与第二测试位点之间的电阻值为正无穷，则所述第一金属层与第二金属层之间未发生ESD；若所述第一测试位点与第二测试位点之间的电阻值在可测范围内，则所述第一金属层与第二金属层之间发生ESD；从而根据所测量的第一测试位点与第二测试位点之间的电阻值检测出阵列基板上发生ESD的位置。
所述阵列基板上的第一金属层与第二金属层位于不同层。
所述第一金属层与第二金属层之间设有绝缘层。
所述阵列基板上的第一金属层与第二金属层位于同一层。
所述阵列基板为低温多晶硅薄膜晶体管阵列基板。
所述第一金属层与第二金属层为钼、铝、铜中的一种或多种的堆栈组合。
所述绝缘层的材料为氮化硅、氧化硅、或二者的组合。
所述第一导线、第二导线均为金属线，所述第一测试位点、及第二测试位点均为金属块。
所述第一导线与第二导线的材料为铜或铝。
所述第一测试位点与第二测试位点的材料为铜或铝。
本发明的有益效果：本发明的阵列基板的ESD检测方法，通过在阵列基板的第一金属层上引出第一导线并连接至第一测试位点；在阵列基板的第二金属层上引出第二导线并连接至第二测试位点；当阵列基板发生ESD故障时，通过电阻检测装置测量所述第一测试位点与第二测试位点之间的电阻值；若所述第一测试位点与第二测试位点之间的电阻值为正无穷，则所述第一金属层与第二金属层之间未发生ESD；若所述第一测试位点与第二测试位点之间的电阻值在可测范围内，则所述第一金属层与第二金属层之间发生ESD；从而根据所测量的第一测试位点与第二测试位点之间的电阻值检测出阵列基板上发生ESD的位置；本发明的阵列基板的ESD检测方法与现有技术中通过显微镜寻找ESD位置的方法相比，可更加快速准确地检测出阵列基板上发生ESD的位置，省时省力，同时可以节省检测成本。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为本发明的阵列基板的ESD检测方法的示意流程图；
图2为本发明的阵列基板的ESD检测方法的第一实施例的步骤1的示意图；
图3为本发明的阵列基板的ESD检测方法的第一实施例的步骤1中提供的阵列基板上的第一金属层与第二金属层在正常情况下的示意图；
图4为图3中的第一金属层与第二金属层的剖面结构示意图；
图5为图3中的第一金属层与第二金属层在发生ESD后的示意图；
图6为图5中的第一金属层与第二金属层的剖面结构示意图；
图7为本发明的阵列基板的ESD检测方法的第二实施例的步骤1的示意图；
图8为本发明的阵列基板的ESD检测方法的第二实施例的步骤1中提供的阵列基板上的第一金属层与第二金属层在正常情况下的示意图；
图9为图8中的第一金属层与第二金属层在发生ESD后的示意图；
图10为本发明的阵列基板的ESD检测方法的第三实施例的步骤1的示意图；
图11为本发明的阵列基板的ESD检测方法的第三实施例的步骤1中提供的阵列基板上的第一金属层与第二金属层在正常情况下的示意图；
图12为图11中的第一金属层与第二金属层在发生ESD后的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，并结合图2至图6，为本发明的一种阵列基板的ESD检测方法的第一实施例，包括如下步骤：
步骤1、如图2所示，提供待进行ESD检测的阵列基板，所述阵列基板上设有第一金属层11与第二金属层12，所述第一金属层11通过第一导线21连接至阵列基板表面的第一测试位点31，所述第二金属层12通过第二导线22连接至阵列基板表面的第二测试位点32。
优选的，所述第一测试位点31与第二测试位点32均设置于所述阵列基板的周边区域的表面。
具体地，所述阵列基板为低温多晶硅薄膜晶体管阵列基板。
具体地，所述阵列基板上的第一金属层11与第二金属层12位于不同层，并且所述第一金属层11与第二金属层12均为块状结构。
具体地，所述第一金属层11与第二金属层12为钼(Mo)、铝(Al)、铜(Cu)中的一种或多种的堆栈组合。
具体地，所述第一金属层11与第二金属层12之间设有绝缘层13。
具体地，所述绝缘层13的材料为氮化硅(SiNx)、氧化硅(SiOx)、或二者的组合。
具体地，所述第一导线21、第二导线22均为金属线，所述第一测试位点31、及第二测试位点32均为金属块。
具体地，所述第一导线21与第二导线22的材料为铜或铝。
具体地，所述第一测试位点31与第二测试位点32的材料为铜或铝。
步骤2、提供电阻检测装置(未图示)，通过所述电阻检测装置测量所述第一测试位点31与第二测试位点32之间的电阻值。
请参阅图3至图4，若所述第一测试位点31与第二测试位点32之间的电阻值为正无穷，则说明所述第一金属层11与第二金属层12之间并未因ESD而导致相互连接，因此可判断所述第一金属层11与第二金属层12之间未发生ESD；请参阅图5至图6，若所述第一测试位点31与第二测试位点32之间的电阻值在可测范围内，则说明所述第一金属层11与第二金属层12之间因ESD而导致相互连接，因此可判断所述第一金属层11与第二金属层12之间发生ESD；从而根据所测量的第一测试位点31与第二测试位点32之间的电阻值检测出阵列基板上发生ESD的位置。
具体的，所述电阻检测装置为万用表或兆欧表，优选为万用表。
请参阅图7至图9，为本发明的一种阵列基板的ESD检测方法的第二实施例，其与上述第一实施例的区别在于，待进行ESD检测的阵列基板上的第一金属层11与第二金属层12均为线状结构，其余部分均与第一实施例相同，此处不再赘述。
请参阅图10至图12，为本发明的一种阵列基板的ESD检测方法的第三实施例，其与上述第一实施例的区别在于，待进行ESD检测的阵列基板上的第一金属层11与第二金属层12位于同一层，且均为线状结构，其余部分均与第一实施例相同，此处不再赘述。
综上所述，本发明的阵列基板的ESD检测方法，通过在阵列基板的第一金属层上引出第一导线并连接至第一测试位点；在阵列基板的第二金属层上引出第二导线并连接至第二测试位点；当阵列基板发生ESD故障时，通过电阻检测装置测量所述第一测试位点与第二测试位点之间的电阻值；若所述第一测试位点与第二测试位点之间的电阻值为正无穷，则所述第一金属层与第二金属层之间未发生ESD；若所述第一测试位点与第二测试位点之间的电阻值在可测范围内，则所述第一金属层与第二金属层之间发生ESD；从而根据所测量的第一测试位点与第二测试位点之间的电阻值检测出阵列基板上发生ESD的位置；本发明的阵列基板的ESD检测方法与现有技术中通过显微镜寻找ESD位置的方法相比，可更加快速准确地检测出阵列基板上发生ESD的位置，省时省力，同时可以节省检测成本。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。

Claims (10)

1.一种阵列基板的ESD检测方法，其特征在于，包括如下步骤：
步骤1、提供待进行ESD检测的阵列基板，所述阵列基板上设有第一金属层(11)与第二金属层(12)，所述第一金属层(11)通过第一导线(21)连接至阵列基板表面的第一测试位点(31)，所述第二金属层(12)通过第二导线(22)连接至阵列基板表面的第二测试位点(32)；
步骤2、提供电阻检测装置，通过所述电阻检测装置测量所述第一测试位点(31)与第二测试位点(32)之间的电阻值；
若所述第一测试位点(31)与第二测试位点(32)之间的电阻值为正无穷，则所述第一金属层(11)与第二金属层(12)之间未发生ESD；若所述第一测试位点(31)与第二测试位点(32)之间的电阻值在可测范围内，则所述第一金属层(11)与第二金属层(12)之间发生ESD；从而根据所测量的第一测试位点(31)与第二测试位点(32)之间的电阻值检测出阵列基板上发生ESD的位置。
2.如权利要求1所述的阵列基板的ESD检测方法，其特征在于，所述阵列基板上的第一金属层(11)与第二金属层(12)位于不同层。
3.如权利要求2所述的阵列基板的ESD检测方法，其特征在于，所述第一金属层(11)与第二金属层(12)之间设有绝缘层(13)。
4.如权利要求1所述的阵列基板的ESD检测方法，其特征在于，所述阵列基板上的第一金属层(11)与第二金属层(12)位于同一层。
5.如权利要求1所述的阵列基板的ESD检测方法，其特征在于，所述阵列基板为低温多晶硅薄膜晶体管阵列基板。
6.如权利要求1所述的阵列基板的ESD检测方法，其特征在于，所述第一金属层(11)与第二金属层(12)为钼、铝、铜中的一种或多种的堆栈组合。
7.如权利要求3所述的阵列基板的ESD检测方法，其特征在于，所述绝缘层(13)的材料为氮化硅、氧化硅、或二者的组合。
8.如权利要求1所述的阵列基板的ESD检测方法，其特征在于，所述第一导线(21)、第二导线(22)均为金属线，所述第一测试位点(31)、及第二测试位点(32)均为金属块。
9.如权利要求8所述的阵列基板的ESD检测方法，其特征在于，所述第一导线(21)与第二导线(22)的材料为铜或铝。
10.如权利要求8所述的阵列基板的ESD检测方法，其特征在于，所述第一测试位点(31)与第二测试位点(32)的材料为铜或铝。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109285510A (zh) * 2018-09-11 2019-01-29 重庆惠科金渝光电科技有限公司 一种显示器、显示装置和接地电阻调节方法
CN110969972A (zh) * 2019-12-27 2020-04-07 Tcl华星光电技术有限公司 显示面板的检测方法、装置、控制器和存储介质

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030080748A1 (en) * 2001-10-26 2003-05-01 Scott Newman Electrostatic discharge testing apparatus
GB0608827D0 (en) * 2005-08-31 2006-06-14 Chunghwa Picture Tubes Ltd Thin film transistor array, electrostatic discharge protective device thereof, and methods for fabricating the same
US20070279036A1 (en) * 2006-06-02 2007-12-06 Research In Motion Limited Electrostatic discharge device testing system and method
US20080108217A1 (en) * 2005-12-14 2008-05-08 Freescale Semiconductor, Inc. Esd protection for passive integrated devices
US20090310052A1 (en) * 2008-06-16 2009-12-17 Wintek Corporation Liquid crystal display panel
CN201828746U (zh) * 2010-09-28 2011-05-11 北京京东方光电科技有限公司 液晶显示基板和液晶显示器
US20110169495A1 (en) * 2010-01-14 2011-07-14 Su-Young Lee Monitoring module including e-field-induced esd-sensitive pattern and photomask including the module
CN102831852A (zh) * 2012-09-12 2012-12-19 深圳市华星光电技术有限公司 一种tft-lcd阵列基板及其测试方法
CN104144557A (zh) * 2013-05-06 2014-11-12 三星显示有限公司 电子设备的基板及包括该基板的电子设备
US20150062138A1 (en) * 2013-09-04 2015-03-05 Mstar Semiconductor, Inc. Timing controller for image display and associated control method
JP2015072315A (ja) * 2013-10-01 2015-04-16 パナソニック株式会社 表示装置用パネル、表示装置、および、表示装置用パネルの検査方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7470942B2 (en) * 2005-09-07 2008-12-30 Chunghwa Picture Tube., Ltd. Thin film transistor array and electrostatic discharge protective device thereof
CN101398455B (zh) * 2007-09-28 2012-07-04 奇美电子股份有限公司 测量系统和方法
KR101844431B1 (ko) * 2011-06-24 2018-04-03 삼성디스플레이 주식회사 검사패드부를 포함하는 표시패널 및 평판표시장치
KR102210985B1 (ko) * 2014-01-14 2021-02-03 삼성디스플레이 주식회사 구동집적회로, 이를 포함하는 표시장치 및 결합저항 측정 방법
CN104008743B (zh) * 2014-05-28 2017-01-11 深圳市华星光电技术有限公司 一种静电放电保护芯片及驱动电路

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030080748A1 (en) * 2001-10-26 2003-05-01 Scott Newman Electrostatic discharge testing apparatus
GB0608827D0 (en) * 2005-08-31 2006-06-14 Chunghwa Picture Tubes Ltd Thin film transistor array, electrostatic discharge protective device thereof, and methods for fabricating the same
US20080108217A1 (en) * 2005-12-14 2008-05-08 Freescale Semiconductor, Inc. Esd protection for passive integrated devices
US20070279036A1 (en) * 2006-06-02 2007-12-06 Research In Motion Limited Electrostatic discharge device testing system and method
US20090310052A1 (en) * 2008-06-16 2009-12-17 Wintek Corporation Liquid crystal display panel
US20110169495A1 (en) * 2010-01-14 2011-07-14 Su-Young Lee Monitoring module including e-field-induced esd-sensitive pattern and photomask including the module
CN201828746U (zh) * 2010-09-28 2011-05-11 北京京东方光电科技有限公司 液晶显示基板和液晶显示器
CN102831852A (zh) * 2012-09-12 2012-12-19 深圳市华星光电技术有限公司 一种tft-lcd阵列基板及其测试方法
CN104144557A (zh) * 2013-05-06 2014-11-12 三星显示有限公司 电子设备的基板及包括该基板的电子设备
US20150062138A1 (en) * 2013-09-04 2015-03-05 Mstar Semiconductor, Inc. Timing controller for image display and associated control method
JP2015072315A (ja) * 2013-10-01 2015-04-16 パナソニック株式会社 表示装置用パネル、表示装置、および、表示装置用パネルの検査方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109285510A (zh) * 2018-09-11 2019-01-29 重庆惠科金渝光电科技有限公司 一种显示器、显示装置和接地电阻调节方法
CN109285510B (zh) * 2018-09-11 2021-04-02 重庆惠科金渝光电科技有限公司 一种显示器、显示装置和接地电阻调节方法
CN110969972A (zh) * 2019-12-27 2020-04-07 Tcl华星光电技术有限公司 显示面板的检测方法、装置、控制器和存储介质

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