CN105552213B - A magnetic resistance method for controlling the ratio - Google Patents

A magnetic resistance method for controlling the ratio Download PDF

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CN105552213B
CN105552213B CN201510902153.XA CN201510902153A CN105552213B CN 105552213 B CN105552213 B CN 105552213B CN 201510902153 A CN201510902153 A CN 201510902153A CN 105552213 B CN105552213 B CN 105552213B
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alternating current
magneto
resistance
i1
magnetic field
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CN105552213A (en
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颜世申
田玉峰
梅良模
李欢欢
张昆
黄启坤
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山东大学
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Abstract

一种调控磁电阻比值的方法,包括:1)在具有整流磁电阻器件的两端施加一个固定幅值的交流电流;2)同时,在所述交流电流的基础上耦合上一个直流电流I1,此时输出的交流电流信号存在I1的平移:i=I0sin(wt)+I1;3)检测所述器件随外磁场变化所产生的整流电压VH:其中H代表外磁场的强度,T代表所述交流电流的周期;4)调节施加在所述器件上电流的直流分量I1的大小,从而调节整流电压VH的大小,最终调节磁电阻比值MR=(VH‑V0)/V0。 A method of magneto-resistance ratio regulation, comprising: 1) a fixed magnitude alternating current is applied at both ends of the magnetic resistance device having a rectifier; 2) at the same time, on the basis of the alternating current on a direct current to the coupling I1, in this case the presence of the alternating current signal output I1 translation: i = I0sin (wt) + I1; rectified voltage VH 3) detecting the magnetic field change with external devices produced: wherein H represents the intensity of the external magnetic field, T represents the cycle alternating current; 4) on the adjusting device of the DC component of the current magnitude I1 is applied, thereby adjusting the magnitude of the rectified voltage VH, final adjustment magneto-resistance ratio MR = (VH-V0) / V0. 本发明是利用所述于器件既具有整流磁电阻,又具有直流磁电阻,进而实现调节整流电压VH的大小,最终达到调节磁电阻比值的技术效果。 The present invention utilizes both a rectifying device in the magnetoresistance, but also has a DC magnetic resistance, so as to realize the size of the adjustment of the rectified voltage VH, and ultimately achieve the technical effect of adjusting the magneto-resistance ratio.

Description

_种调控磁电阻比值的方法 _ Regulation method magnetoresistance ratio

技术领域 FIELD

[0001] 本发明涉及一种调控磁电阻比值的方法,属于磁传感器以及磁电控制技术领域。 [0001] The present invention relates to a magneto-resistance ratio control, and belongs to the magnetic sensor control magnetic field.

背景技术 Background technique

[0002] 通常来说,磁电阻指的是电阻率随外磁场的变化而变化的现象。 [0002] In general, magnetoresistive refers resistivity changes with the external magnetic field varies phenomenon. 磁电阻的大小通常用MR = (Rh-Rq) /Ro来衡量,其中Rh为外磁场H下的电阻,Ro为没有外磁场下的电阻。 Usually the size of the magnetic resistance MR = (Rh-Rq) / Ro measured, wherein Rh is the resistance of the external magnetic field H, Ro is the resistance at no external magnetic field. 磁电阻效应在磁存储,磁传感器领域有巨大的应用前景。 Magnetoresistance have potential application in the magnetic memory, a magnetic field sensor. 磁电阻越大,则制成的磁传感器越灵敏, 信噪比也越高。 The larger the magnetoresistance, the magnetic sensor is made more sensitive, higher signal to noise ratio. 由于受洛伦兹力的影响,所有的材料都有磁电阻效应,但是一般磁电阻很小,没有实际应用的价值。 Due to the impact of the Lorentz force, all materials have magnetic resistance effect, but generally magnetic resistance is small, there is no practical value. 目前为止,各向异性磁电阻、巨磁电阻、隧穿磁电阻、庞磁电阻以及奇异磁电阻等具有较大磁电阻比值,并成功应用到磁传感器或磁读头领域。 So far, the anisotropic magnetoresistance, giant magnetoresistance, tunneling magnetoresistance, colossal magnetoresistance, and the like having a large singular magnetoresistive magneto-resistance ratio, and successfully applied to a magnetic sensor or read head magnetic field.

[0003] 2015年山东大学自旋电子学课题组在Al/Ge肖特基结中成功发现了整流磁电阻效应,并申请了专利。 [0003] 2015 spintronics research group of Shandong University in Al / Ge Schottky rectifying junction successfully found magnetoresistance effect, and applied for a patent. 不同于之前提到的各类磁电阻效应,整流磁电阻指的是输入一个纯的正弦交流电流,测量整流后的直流电压,该整流电压随着磁场显著变化的现象。 Various types of magnetoresistance effect different from the previously mentioned rectifying magnetoresistance refers to a pure sinusoidal input AC current, DC voltage measurement rectified, the rectified voltage with a magnetic field significant change phenomenon. 该整流磁电阻被定义为:MR= (Vh-Vq) /Vq,其中Vh为外磁场H下的整流电压,Vq为没有外磁场下的整流电压。 The rectifying magnetoresistance is defined as: MR = (Vh-Vq) / Vq, where Vh is the rectified voltage at the external magnetic field H, Vq is no external magnetic field in the rectified voltage. Al/Ge肖特基结室温下的整流磁电阻效应高达200%,而其直流磁电阻仅有80%。 Rectifying the magnetoresistance effect of Al / Ge Schottky junction temperature up to 200%, while only 80% of the DC magnetic resistance. 整流磁电阻效应正是整流效应和磁电阻效应协同作用的结果。 Results synergy is rectified magnetoresistance effect and the magnetoresistance effect rectification.

[0004] 目前为止,不管采用何种磁电阻机制,磁电阻的大小是无法调控的。 [0004] So far, regardless of the use of magnetic resistance mechanism, the size of the magnetic resistance is not regulated. 一旦样品被制备出来,磁电阻的比值就已经固定,这极大的限制了磁电阻的应用场景。 Once the sample is prepared out of the magnetoresistance ratio has been fixed, which greatly limits the application scenario magnetoresistance. 鉴于以上情况,我们在整流磁电阻的基础上,通过调控直流电流和交流电流的成分比实现了调控磁电阻大小的目标。 In view of the above, based on the rectifying we magnetoresistance on the component by the direct current and alternating current regulation ratio magnetoresistance achieve the goal of the regulation size. 该调控方法可以应用到所有具有整流磁电阻效应的器件中,在磁传感器以及磁电调控领域有极大的应用前景。 The regulation method can be applied to all devices having a rectifying the magnetoresistance effect, there is great potential applications in magnetic sensors and the magnetic field of regulation.

发明内容 SUMMARY

[0005] 针对现有技术的不足,本发明提供一种调控磁电阻比值的方法。 [0005] for the deficiencies of the prior art, the present invention provides a method of modulating the magneto-resistance ratio. 本发明利用交流电流和直流电流共同作用来增大磁电阻比值,并提高磁传感器的信噪比和测量精度。 The present invention utilizes interaction alternating current and direct current to increase the magnetic resistance ratio, and improve the signal to noise ratio and measurement accuracy of the magnetic sensor.

[0006] 本发明的技术方案如下: [0006] aspect of the present invention is as follows:

[0007] —种调控磁电阻比值的方法,包括: [0007] - Method Species regulation magnetoresistance ratio, comprising:

[0008] 1)在具有整流磁电阻器件的两端施加一个固定幅值的交流电流,由于所述器件具有整流磁电阻,故所述器件产生一个随外磁场变化的整流电压; Alternating current [0008] 1) a fixed magnitude is applied to both ends of the magnetic resistance device having a rectifier, since the rectifying device having a magnetoresistive, so that the device produces a rectified voltage with external magnetic field variation;

[0009] 2)同时,在所述交流电流的基础上耦合上一个直流电流I1,此时输出的交流电流ί目号存在Ii的平移:i = I〇Sin (wt) +Ii; [0009] 2) At the same time, the coupler a direct current I1, the alternating current output at this time ί mesh number translation Ii on the basis of the presence of the alternating current on: i = I〇Sin (wt) + Ii;

Figure CN105552213BD00041

[0010] 3)检测所述器件随外磁场变化所产生的整流电压VH: 其中H代表外磁场的强度,T代表所述交流电流的周期; Rectified voltage VH [0010] 3) detecting means with the external magnetic field generated by: wherein H represents the intensity of an external magnetic field, T representative of the cycle of the alternating current;

[0011] 4)调节施加在所述器件上电流的直流分量I1的大小,从而调节整流电压Vh的大小, 最终调节磁电阻比值MR= (Vh-Vo) /V〇。 [0011] 4) exerted on the adjusting device of the DC component of current I1 of magnitude, thereby adjusting the magnitude of the rectified voltage Vh, final adjustment magneto-resistance ratio MR = (Vh-Vo) / V〇. 本发明是利用所述器件既具有整流磁电阻,又具有直流磁电阻,进而实现调节整流电压Vh的大小,最终达到调节磁电阻比值的技术效果。 The present invention utilizes the magnetoresistive device has both a rectifier, a DC magnetic resistance and, thus achieving size adjustment rectified voltage Vh, and ultimately achieve the technical effect of adjusting the magneto-resistance ratio.

[0012] 本发明的原理是: [0012] The principle of the invention is:

[0013] 在整流磁电阻的基础上,通过调节不同直流电流和交流电流的比例,由于直流磁电阻和交流磁电阻两者非线性耦合,通过直流磁电阻和交流磁电阻之间的竞争作用,从而调节整流电压随磁场的变化曲线,达到调控磁电阻比值的目的。 [0013] On the basis of the rectified magnetoresistance, by adjusting the ratio of the different alternating current and direct current, since the non-linear resistors coupling and DC magnetic AC magnetic resistance both by the action of the competition between the DC and the AC magnetic resistance of the magnetic resistance, thereby adjusting the curve of the rectified voltage changes with magnetic fields, to control the target magnetoresistance ratio.

[0014] 基于此方法,在室温条件下,我们在硅基整流磁电阻器件中实现了高达2000%的磁电阻比值,与此同时其整流磁电阻仅为49.3%,直流磁电阻为66.1%。 [0014] Based on this method, at room temperature, we have achieved in the silicon rectifying magnetic resistance device in the magneto-resistance ratio of up to 2000%, while it was only 49.3% magnetoresistance rectifier, DC magnetic resistance is 66.1%.

[0015] 理论上说,只要具有整流磁电阻,即可使用这种方法调控。 [0015] In theory, as long as a rectifier magnetoresistance, regulation of this method can be used. 整流磁电阻效应原则上可以在同时具有整流效应和磁电阻效应的PN结、肖特基结和非对称势垒的磁隧道结中实现。 It can be Schottky junction and asymmetric magnetic tunnel junction barrier be implemented in a PN junction with a rectifying effect at the same time and on the principle of magnetoresistance effect magnetoresistance effect rectification.

[0016] 本发明的优势在于: [0016] The advantage of the present invention:

[0017] 1、本发明所述调控磁电阻比值的方法能够提高磁电阻比值,提高传感器的测量精度和信噪比。 [0017] 1, the regulation method of the present invention can be improved magneto-resistance ratio of the magnetic resistance ratio, signal to noise ratio and improve the measurement accuracy of the sensor. 在硅基肖特基器件中,本发明在室温实现了高达2000%的磁电阻比值。 Silicon Schottky devices, the present invention is achieved at room temperature magnetoresistance ratio up to 2000%.

[0018] 2、本发明所述调控磁电阻比值的方法具有通用性。 [0018] 2, the present invention is a method of modulating magneto-resistance ratio has versatility. 能够应用到所有具有整流磁电阻效应的器件中。 Can be applied to all devices having a rectifying the magnetoresistance effect. 例如在基于硅和锗的肖特基结,PN结以及在非对称势垒的磁隧道结中。 For example, in the Schottky junction, PN junction based on silicon and germanium and asymmetric barrier in a magnetic tunnel junction.

[0019] 3、本发明所述调控磁电阻比值的方法不需要高的工作电压(〈IV),具有低功耗的优势。 [0019] 3, the method of the present invention does not require the regulation of magneto-resistance ratio of the high operating voltage (<IV), having the advantages of low power consumption. 器件不会长时间处于高电压状态,使用寿命更长。 The device will not for a long time at a high voltage state, longer life.

[0020] 4、本发明所述调控磁电阻比值的方法,交流和直流电混合在高频信号传输,金属电解以及微分电导测量等方面有重要的应用价值,因而直流和交流的混合是一种非常成熟的技术,只需要用电容和电阻等基础元件,电路连接简单。 [0020] 4, the present invention is the regulation of the magneto-resistance ratio method, mixed AC and DC have important application in the high-frequency signal transmission, and a metal electrolytic differential conductance measurements, thus mixing DC and AC is a very mature technology, capacitance and resistance just use the base element, the circuit connection is simple.

[0021] 5、本发明所述调控磁电阻比值的方法,是基于肖特基结、PN结等,与当今的半导体工艺相兼容,有助于大规模生产。 [0021] 5. The method of regulation of the magneto-resistance ratio of the present invention, is based on a Schottky junction, the PN junction and the like, compatible with today's semiconductor technology, contributes to mass production.

附图说明 BRIEF DESCRIPTION

[0022] 图1为硅基整流磁电阻器件的结构示意图,其中,所述电流方向垂直于该硅衬底, 所述外部磁场方向同所述电流方向垂直; [0022] FIG. 1 is a schematic view of a silicon rectifier magnetic resistance device, wherein the current direction perpendicular to the silicon substrate, the same external magnetic field in a direction perpendicular to the current direction;

[0023] 图2为300K的环境温度下,在硅基肖特基结中,固定交流电流的幅值为50μΑ,ΒΡΐο = 50μΑ;调节不同电流直流分量I1 (-ΙΟμΑ〜ΙΟμΑ),测得整流电压随磁场的变化曲线; [0023] FIG 2 is at ambient temperature of 300K, in the silicon Schottky junction, the magnitude of the alternating current is fixed 50μΑ, ΒΡΐο = 50μΑ; adjusting the DC component of different current I1 (-ΙΟμΑ~ΙΟμΑ), measured rectifier voltage curve with a varying magnetic field;

[0024] 图3为300Κ的环境温度下,磁电阻比值随着电流直流分量1!的变化图。 The [0024] FIG. 3 is a 300Κ ambient temperature, the ratio of change in magnetoresistance as current DC component of FIG 1! Is. 最高实现了高达2000 %的磁电阻比值。 Magneto-resistance ratio of the maximum to achieve up to 2000%.

具体实施方式: Detailed ways:

[0025] 下面结合实施例和说明书附图对本发明做详细的说明,但不仅限于此。 [0025] The following Examples and accompanying drawings a detailed description of the present invention, but is not limited thereto.

[0026] 如图1-3所示。 [0026] Figure 1-3.

[0027] 实施例1、 [0027] Example 1,

[0028] 一种调控磁电阻比值的方法,包括: [0028] A magneto-resistance ratio regulation, comprising:

[0029] 1)在具有整流磁电阻器件的两端施加一个固定幅值的交流电流i = Iosin (wt);由于所述器件具有整流磁电阻,故所述器件产生一个随外磁场变化的整流电压; [0029] 1) a fixed magnitude is applied to both ends of the magnetic resistance device having a rectifying alternating current i = Iosin (wt); Since the rectifying device having a magnetoresistive, so that the device produces an external magnetic field with the rectification Voltage;

[0030] 2)同时,在所述交流电流的基础上耦合上一个直流电流I1,此时输出的交流电流信号存在Ii的平移:i = I〇sin (wt) +Ii; [0030] 2) At the same time, the coupler a direct current I1, is present on the basis of the translation Ii alternating current on the alternating current signal output at this time: i = I〇sin (wt) + Ii;

Figure CN105552213BD00061

[0031] 3)检测所述器件随外磁场变化所产生的整流电压Vh 其中H代表外磁场的强度,T代表所述交流电流的周期; Rectified voltage [0031] 3) detecting means with the external magnetic field H generated wherein Vh represents the intensity of an external magnetic field, T representative of a period of the alternating current;

[0032] 4)调节施加在所述器件上电流的直流分量I1的大小,从而调节整流电压Vh的大小, 最终调节磁电阻比值MR= (Vh-Vo)/Vo。 [0032] 4) exerted on the adjusting device of the DC component of current I1 of magnitude, thereby adjusting the magnitude of the rectified voltage Vh, final adjustment magneto-resistance ratio MR = (Vh-Vo) / Vo. 本发明是利用所述于器件既具有整流磁电阻,又具有直流磁电阻,进而实现调节整流电压Vh的大小,最终达到调节磁电阻比值的技术效果。 The present invention utilizes both a rectifying device in the magnetoresistance, but also has a DC magnetic resistance, so as to realize adjusting the size of the rectified voltage Vh, and ultimately achieve the technical effect of adjusting the magneto-resistance ratio.

[0033] 对硅基整流磁电阻器件利用如实施例1所述调控磁电阻比值方法,使所述硅基肖整流磁电阻器件获得高达2000%的磁电阻比值。 [0033] the silicon rectifying device using magnetoresistive as regulated by the magneto-resistance ratio method embodiment, the silicon rectifying Jixiao magnetic resistance device obtained magneto-resistance ratio of up to 2000%.

[0034] 应用例1、 [0034] Application Example 1,

[0035] 在所述实施例1中,所述器件为硅基肖特基结,其具体处理方法包括: [0035] In one embodiment, the device 1 of the embodiment is a silicon Schottky junction, which specific processing method comprising:

[0036] (1)将电阻率>1000 Ω · cm,厚度为〇.5mm的本征Si衬底用去离子水、酒精、丙酮、酒精分别超声10分钟,然后放入烘箱烘烤,温度设定100 °C,时间为两个小时;将本征硅裁剪成3mm X 3mm的方块; [0036] (1) The resistivity> 1000 Ω · cm, a thickness of the intrinsic Si substrate 〇.5mm deionized water, alcohol, acetone, ethanol were sonicated for 10 minutes and then placed in an oven baking, the temperature set set 100 ° C, time is two hours; the intrinsic silicon 3mm X 3mm was cut into a block;

[0037] (2)将切好的方块放入浓度为0.2%的氢氟酸中除去在本征硅上自然氧化形成的大约2nm的二氧化娃层; [0037] (2) will be cut into squares baby dioxide concentration of 0.2% hydrofluoric acid layer removing native oxide formed on the intrinsic silicon of about 2nm;

[0038] (3)在方块形的衬底的上下两面焊接铟电极,通过控制烙铁焊接的时间不同,在硅衬底上形成两个不对称的肖特基势垒结,如图1所示; [0038] (3) at the top and bottom surfaces of the box-shaped welding electrode is indium substrate, by controlling the soldering iron at different times, in two asymmetric formed on a silicon substrate a Schottky barrier junction, shown in Figure 1 ;

[0039] ⑷用Keithley 6221作为交流源接入器件两端,同时用Keithley 2182检测两端整流电压变化,超导量子干涉仪提供外部磁场环境,磁场与电流方向垂直; [0039] ⑷ used as a diac Keithley 6221 source access device, with a Keithley 2182 while the rectified voltage across the sense changes SQUID environment provides an external magnetic field, the magnetic field perpendicular to the current direction;

[0040] (5)固定Keithley 6221输出的交流振幅为50μΑ,即Ιο = 50μΑ,调节电流源的零点漂移(offset),即在交流信号上叠加一个直流信号I1,范围从_10μΑ到ΙΟμΑ。 [0040] (5) AC output amplitude is fixed Keithley 6221 50μΑ, i.e. Ιο = 50μΑ, adjust the zero drift current source (offset), i.e., a DC signal is superimposed on the alternating current signal I1, to range from _10μΑ ΙΟμΑ. 测得不同直流分量1:下,整流电压随外部磁场的变化曲线,如图2所示; Different measured dc component 1: rectifying the voltage curve with the external magnetic field, shown in Figure 2;

[0041] 图3为本实例在300Κ温度下,不同I1直流分量下的磁电阻大小。 [0041] In Example 3 of the present 300Κ temperature magnetoresistance in different sizes I1 DC component. 从图3中得到,当I1 =1.53μΑ时磁电阻比值达到最大,为2000% ;其纯的整流磁电阻,SPI1 = O时,磁电阻比值为49.3% ;其直流磁电阻为66.1 %。 Obtained from FIG. 3, when the magneto-resistance ratio when I1 = 1.53μΑ maximum as 2000%; its pure rectifying magnetoresistance, SPI1 = O, magneto-resistance ratio of 49.3%; the DC magnetic resistance of 66.1%. 尽管直流磁电阻比整流磁电阻大,但是通过直流和交流混合的方式,将磁电阻增大40倍,这将在磁传感器以及磁电控制领域有广泛的应用前景。 Although the resistance is larger than the rectified DC magnetic magnetoresistance, but the mixing of the DC and AC manner, the magnetic resistance increases 40 times, it will have broad application prospect in the magnetic sensor and magnetic control field.

[0042] 应用例2、 [0042] Application Example 2,

[0043] 在所述实施例1中,所述器件为锗基肖特基结,其具体处理方法包括: [0043] In the embodiment in Example 1, the device is based Schottky junction germanium, and specific processing method comprising:

[0044] (1)将电阻率55.6-59.4Ω · cm,厚度为〇.5mm的本征Ge衬底用去离子水、酒精、丙酮、酒精分别超声10分钟,然后放入烘箱烘烤,温度设定l〇〇°C,时间为两个小时; [0044] (1) The resistivity 55.6-59.4Ω · cm, a thickness of 〇.5mm intrinsic Ge substrate with deionized water, alcohol, acetone, ethanol were sonicated for 10 minutes and then placed in an oven bake temperature setting l〇〇 ° C, time is two hours;

[0045] (2)将本征锗衬底放入磁控溅射仪腔室,溅射生长IOOnm的铝电极,形成Al/Ge肖特基接触界面; [0045] (2) the intrinsic germanium substrate into the magnetic sputtering chamber, the sputtering growth IOOnm aluminum electrode formed Al / Ge Schottky contact interface;

[0046] (3)将生长完铝电极的锗衬底取出,用超声切片仪裁切成直径3_的圆形; [0046] (3) After the growth of the germanium substrate taken out of the aluminum electrode, with an ultrasonic cutting instrument sections of circular diameter 3_;

[0047] ⑷锗衬底的另一面焊接铟电极,形成欧姆接触; [0047] the other surface of the welding electrode ⑷ indium germanium substrate, an ohmic contact;

[0048] (5)用Keithley 6221作为交流源接入器件两端,同时用Keithley 2182检测两端整流电压变化,超导量子干涉仪提供外部磁场环境,磁场与电流方向垂直; [0048] (5) as a diac with a Keithley 6221 source access device, with a Keithley 2182 while the rectified voltage across the sense changes SQUID environment provides an external magnetic field, the magnetic field perpendicular to the current direction;

[0049] (6)固定Keithley 6221输出的交流振幅为0. 1mA,调节电流源的零点漂移(off set),即在交流信号上叠加一个直流信号I1,范围从-5μΑ到20μΑ;测得不同1!下,整流电压随外磁场的变化曲线; [0049] (6) a fixed AC amplitude output from Keithley 6221 is 0. 1mA, adjust the zero drift current source (off set), i.e., a DC signal is superimposed on the alternating current signal I1, to range from -5μΑ 20μΑ; measured at different ! 1, the change in the rectified voltage with external magnetic field curve;

[0050] 在300K温度下,当11 = 5.2281^时磁电阻比值达到最大,为32500%,远远高于其整流磁电阻(120%)和直流磁电阻(45%)。 [0050] at a temperature of 300K, 11 = 5.2281 ^ when the magnetic resistance ratio is maximized, 32,500%, far higher than the rectified magnetoresistance (120%) and the DC magnetic resistance (45%).

[0051] 总之,在整流磁电阻的基础上,通过该交流和直流混合来调控磁电阻比值的方法, 能够极大的增大磁电阻比值,可以应用到磁传感器领域,提高测量的精度和信噪比,为开发新一代磁传感器提供了依据。 [0051] In summary, based on the rectifying magnetoresistance, the method magneto-resistance ratio is regulated by the AC to DC and mixed, can greatly increase the magnetic resistance ratio, it can be applied to the magnetic field sensor, to improve the accuracy and reliability of measurement noise ratio, provided the basis for the development of a new generation of magnetic sensors. 此外,该发明的创新不仅仅在于能够增大磁电阻比值,而是能动态调节磁电阻的大小,可以令器件的磁电阻比值处于任何的范围内,在磁电调控领域有重大的应用前景。 Further, the invention is not only innovative in that the magneto-resistance ratio can be increased, but can dynamically adjust the size of the magnetic resistance device can make the magneto-resistance ratio is within any range, there is the potential application of the magnetic field of regulation. 最后,该发明还具有通用性,在所有具有整流磁电阻的器件中都可以应用,不受器件本身原理限制。 Finally, the invention is also versatile, it can be applied to all devices having a rectifying magnetoresistance, the principle of the device itself without restrictions. 例如在具有磁电阻的肖特基结、PN结以及非对称势垒的磁隧道结中都能用此发明调控磁电阻比值。 For example, the Schottky junction having a magnetoresistive, PN junctions and asymmetric magnetic tunnel junction barrier can be used in this invention is the regulation of magneto-resistance ratio.

Claims (1)

  1. I. 一种调控磁电阻比值的方法,其特征在于,该方法包括: 1) 在具有整流磁电阻器件的两端施加一个固定幅值的交流电流; 2) 同时,在所述交流电流的基础上耦合上一个直流电流I1,此时输出的交流电流信号存在Ii的平移:i = I〇sin (wt) +Ii; 3) 检测所述器件随外磁场变化所产生的整流电压Vh I. A method of modulating the magneto-resistance ratio method, wherein the method comprises: 1) a fixed magnitude alternating current is applied at both ends of the magnetic resistance device having a rectifier; 2) at the same time, on the basis of the alternating current the upper coupling a direct current I1, the alternating current signal output at this time the presence of the translation Ii: i = I〇sin (wt) + Ii; 3) detecting the magnetic field change with external device rectified voltage Vh generated
    Figure CN105552213BC00031
    其中H 代表外磁场的强度,T代表所述交流电流的周期; 4) 调节施加在所述器件上电流的直流分量I1的大小,从而调节整流电压Vh的大小,最终调节磁电阻比值MR= (Vh-Vo)/Vo。 Wherein H represents the period of the external magnetic field intensity, T representative of said alternating current; 4) on the adjusting device of the DC component of the current magnitude I1 is applied, thereby adjusting the magnitude of the rectified voltage Vh, final adjustment magneto-resistance ratio MR = ( Vh-Vo) / Vo.
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US5270252A (en) * 1988-10-25 1993-12-14 United States Of America As Represented By The Secretary Of The Navy Method of forming platinum and platinum silicide schottky contacts on beta-silicon carbide
CN102509768A (en) * 2011-11-01 2012-06-20 天津大学 Fe3O4 (ferroferric oxide)/p-Si (p-type silicon) structure capable of regulating and controlling magneto-resistance effect with current and preparation method for same
CN104851974A (en) * 2015-05-05 2015-08-19 山东大学 Magnetic sensor having rectification and magneto-resistor effect, preparation method thereof and application thereof

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Publication number Priority date Publication date Assignee Title
US5270252A (en) * 1988-10-25 1993-12-14 United States Of America As Represented By The Secretary Of The Navy Method of forming platinum and platinum silicide schottky contacts on beta-silicon carbide
CN102509768A (en) * 2011-11-01 2012-06-20 天津大学 Fe3O4 (ferroferric oxide)/p-Si (p-type silicon) structure capable of regulating and controlling magneto-resistance effect with current and preparation method for same
CN104851974A (en) * 2015-05-05 2015-08-19 山东大学 Magnetic sensor having rectification and magneto-resistor effect, preparation method thereof and application thereof

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