CN105504118B - 包含具有光酸产生官能团和碱溶解度增强官能团的重复单元的聚合物和相关光致抗蚀剂组合物和电子装置形成方法 - Google Patents

包含具有光酸产生官能团和碱溶解度增强官能团的重复单元的聚合物和相关光致抗蚀剂组合物和电子装置形成方法 Download PDF

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CN105504118B
CN105504118B CN201510650560.6A CN201510650560A CN105504118B CN 105504118 B CN105504118 B CN 105504118B CN 201510650560 A CN201510650560 A CN 201510650560A CN 105504118 B CN105504118 B CN 105504118B
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repetitive unit
light acid
acid
independently
base
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Chinese (zh)
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CN105504118A (zh
Inventor
P·J·拉博姆
V·吉安
J·W·萨克莱
J·F·卡梅伦
S·M·科莱
A·M·科沃克
D·A·瓦莱里
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DuPont Electronic Materials International LLC
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Rohm and Haas Electronic Materials LLC
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F228/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a bond to sulfur or by a heterocyclic ring containing sulfur
    • C08F228/02—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a bond to sulfur or by a heterocyclic ring containing sulfur by a bond to sulfur
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN201510650560.6A 2014-10-10 2015-10-09 包含具有光酸产生官能团和碱溶解度增强官能团的重复单元的聚合物和相关光致抗蚀剂组合物和电子装置形成方法 Active CN105504118B (zh)

Applications Claiming Priority (2)

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US201462062347P 2014-10-10 2014-10-10
US62/062347 2014-10-10

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CN105504118A CN105504118A (zh) 2016-04-20
CN105504118B true CN105504118B (zh) 2019-04-30

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Country Link
US (1) US9606434B2 (https=)
JP (1) JP6111306B2 (https=)
KR (1) KR101786641B1 (https=)
CN (1) CN105504118B (https=)
TW (1) TWI589596B (https=)

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WO2018194123A1 (ja) * 2017-04-20 2018-10-25 Jsr株式会社 感放射線性樹脂組成物及びレジストパターン形成方法
JP7407576B2 (ja) * 2019-12-03 2024-01-04 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
CN111138410A (zh) * 2019-12-28 2020-05-12 上海博栋化学科技有限公司 含金刚烷结构的光刻胶产酸树脂单体及其合成方法
JP7719654B2 (ja) * 2020-08-05 2025-08-06 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
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Publication number Publication date
TWI589596B (zh) 2017-07-01
CN105504118A (zh) 2016-04-20
TW201613985A (en) 2016-04-16
US20160102158A1 (en) 2016-04-14
JP6111306B2 (ja) 2017-04-05
JP2016104849A (ja) 2016-06-09
US9606434B2 (en) 2017-03-28
KR20160042776A (ko) 2016-04-20
KR101786641B1 (ko) 2017-10-19

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