CN105448976A - Enhanced AlGaN/GaN high-electron-mobility transistor (HEMT) and fabrication method thereof - Google Patents
Enhanced AlGaN/GaN high-electron-mobility transistor (HEMT) and fabrication method thereof Download PDFInfo
- Publication number
- CN105448976A CN105448976A CN201510992401.4A CN201510992401A CN105448976A CN 105448976 A CN105448976 A CN 105448976A CN 201510992401 A CN201510992401 A CN 201510992401A CN 105448976 A CN105448976 A CN 105448976A
- Authority
- CN
- China
- Prior art keywords
- gan
- layer
- algan
- hemt
- gan layer
- Prior art date
Links
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 112
- 229910002704 AlGaN Inorganic materials 0.000 title claims abstract description 110
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000010410 layers Substances 0.000 claims abstract description 121
- 239000000758 substrates Substances 0.000 claims abstract description 19
- 239000011248 coating agents Substances 0.000 claims description 17
- 238000000576 coating method Methods 0.000 claims description 17
- 230000012010 growth Effects 0.000 claims description 12
- 238000002360 preparation methods Methods 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- 239000000126 substances Substances 0.000 claims description 4
- 239000011777 magnesium Substances 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- 230000004224 protection Effects 0.000 claims description 3
- 238000000034 methods Methods 0.000 abstract description 11
- 238000005530 etching Methods 0.000 abstract description 10
- 101000345976 Thermus thermophilus (strain HB8 / ATCC 27634 / DSM 579) Dodecin Proteins 0.000 description 8
- 238000010586 diagrams Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 239000004065 semiconductors Substances 0.000 description 7
- 239000000463 materials Substances 0.000 description 4
- 238000005516 engineering processes Methods 0.000 description 3
- 230000005533 two-dimensional electron gas Effects 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 210000002381 Plasma Anatomy 0.000 description 2
- 280000874760 Third Generation companies 0.000 description 2
- 230000000295 complement Effects 0.000 description 2
- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound data:image/svg+xml;base64,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 data:image/svg+xml;base64,PD94bWwgdmVyc2lvbj0nMS4wJyBlbmNvZGluZz0naXNvLTg4NTktMSc/Pgo8c3ZnIHZlcnNpb249JzEuMScgYmFzZVByb2ZpbGU9J2Z1bGwnCiAgICAgICAgICAgICAgeG1sbnM9J2h0dHA6Ly93d3cudzMub3JnLzIwMDAvc3ZnJwogICAgICAgICAgICAgICAgICAgICAgeG1sbnM6cmRraXQ9J2h0dHA6Ly93d3cucmRraXQub3JnL3htbCcKICAgICAgICAgICAgICAgICAgICAgIHhtbG5zOnhsaW5rPSdodHRwOi8vd3d3LnczLm9yZy8xOTk5L3hsaW5rJwogICAgICAgICAgICAgICAgICB4bWw6c3BhY2U9J3ByZXNlcnZlJwp3aWR0aD0nODVweCcgaGVpZ2h0PSc4NXB4JyB2aWV3Qm94PScwIDAgODUgODUnPgo8IS0tIEVORCBPRiBIRUFERVIgLS0+CjxyZWN0IHN0eWxlPSdvcGFjaXR5OjEuMDtmaWxsOiNGRkZGRkY7c3Ryb2tlOm5vbmUnIHdpZHRoPSc4NScgaGVpZ2h0PSc4NScgeD0nMCcgeT0nMCc+IDwvcmVjdD4KPHRleHQgZG9taW5hbnQtYmFzZWxpbmU9ImNlbnRyYWwiIHRleHQtYW5jaG9yPSJzdGFydCIgeD0nMjkuNTA2JyB5PSc0OC4zNzUnIHN0eWxlPSdmb250LXNpemU6MzhweDtmb250LXN0eWxlOm5vcm1hbDtmb250LXdlaWdodDpub3JtYWw7ZmlsbC1vcGFjaXR5OjE7c3Ryb2tlOm5vbmU7Zm9udC1mYW1pbHk6c2Fucy1zZXJpZjtmaWxsOiM0Mjg0RjQnID48dHNwYW4+TjwvdHNwYW4+PHRzcGFuIHN0eWxlPSdiYXNlbGluZS1zaGlmdDpzdXBlcjtmb250LXNpemU6MjguNXB4Oyc+LTM8L3RzcGFuPjx0c3Bhbj48L3RzcGFuPjwvdGV4dD4KPC9zdmc+Cg== [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 239000007792 gaseous phases Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006011 modification reactions Methods 0.000 description 1
- 229920002120 photoresistant polymers Polymers 0.000 description 1
- 230000002269 spontaneous Effects 0.000 description 1
- 238000006467 substitution reactions Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
- H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
- H01L29/454—Ohmic electrodes on AIII-BV compounds on thin film AIII-BV compounds
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
Abstract
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to a kind of enhanced AlGaN/GaN High Electron Mobility Transistor (HEMT).
Background technology
Along with the development of the technology such as modern weapons equipment and Aero-Space, radio communication, automotive electronics, the performance of semiconductor device is had higher requirement.With Si and GaAs for before representative two generation semi-conducting material can not meet these requirements, third generation semiconductor material with wide forbidden band is because the performance of its excellence obtains development at full speed.Wherein GaN material is the representational third generation semi-conducting material of most, and compared to Si, GaAs and carborundum (SiC), GaN material has polarity effect.Utilize this property, people have developed AlGaN/GaN High Electron Mobility Transistor (HEMT).
Owing to having the advantages such as large energy gap, high electron mobility, high electron saturation velocities and large disruptive field intensity, become the study hotspot of microwave power device and circuit field in the nearest more than ten years based on the AlGaN/GaN High Electron Mobility Transistor (HEMT) of GaN material.Monolithic integrated microwave circuit (MMIC) due to its relatively other microwave circuits have less size, so be more suitable for being used in high-frequency microwave applications.
Although AlGaN/GaNHEMT has many advantages, also encounter a lot of problem, one of them be exactly common process make AlGaN/GaNHEMT be depletion type (threshold voltage vt h < 0V).Because use negative cut-in voltage, depletion type HEMT is more more complex than enhancement mode (Vth > 0V) HEMT circuit design, which increases the cost of HEMT circuit.Enhancement mode HEMT is an important component part of speed-sensitive switch, high temperature GaN integrated circuit, radio frequency integrated circuit (RFIC) and microwave monolithic integrated circuit (MMIC).From the angle of application, the advantage that enhancement mode HEMT has depletion type HEMT incomparable.In microwave power amplifier and low noise power amplifier field, enhancement mode HEMT does not need negative electrode voltage, reduces complexity and the cost of circuit; In high-power switchgear field, enhancement mode HEMT can improve the fail safe of circuit; In digital fast circuit application, nitride-based semiconductor, owing to lacking p channel device, cannot form the complementary logic of low-power consumption, and enhancement mode HEMT can alleviate the problem lacking p raceway groove, realizes the circuit structure simplified.Therefore the research carrying out enhanced AlGaN/GaNHEMT device is necessary.
The minus method of threshold voltage of current main solution AlGaN/GaNHEMT adopts the recessed grid of etching, etch recessed grid can reduce grid to the distance of raceway groove thus raising grid for the control of raceway groove, effectively can improve the threshold voltage of device.Meanwhile, recessed grid etching can improve device transconductance, improves the high frequency performance of AlGaN/GaN, reduces the short-channel effect caused due to long the shortening of grid.
But, the manufacturing process of existing recessed grid-type AlGaN/GaNHEMT device due to the thickness of AlGaN layer and the accurate control of recessed grid etching depth more difficult, therefore process repeatability is poor, and the controllability of threshold voltage is poor.In addition, in etching process, plasma can damage interface, affects the stability of device.
Summary of the invention
The object of this invention is to provide a kind of enhanced AlGaN/GaN High Electron Mobility Transistor (HEMT), poor to solve existing recessed grid-type enhanced AlGaN/GaNHEMT device technology repeatability, the technical problem that the controllability of threshold voltage is poor and device stability is bad.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: propose a kind of enhanced AlGaN/GaN High Electron Mobility Transistor (HEMT), it comprises:
Substrate;
GaN (i-GaN) layer of involuntary doping, described i-GaN layer is positioned at substrate, and each GaN (p-GaN) layer embedding the doping of one deck p-type in the left part of described i-GaN layer surface and right part surface, but the middle part surface of described i-GaN layer does not embed p-GaN layer.
Certainly, above-mentioned transistor also can comprise the following conventional component part of transistor:
Source S, described source S is positioned in the p-GaN layer that described i-GaN layer left part is surperficial or right part is surperficial, and the width of described source S is less than the width of this p-GaN layer;
Drain D, described drain D is positioned in another p-GaN layer of described i-GaN layer, and the width of described drain D is less than the width of this p-GaN layer;
AlGaN (i-AlGaN) layer of involuntary doping, described i-AlGaN layer is positioned in the intermediate surface of described i-GaN layer, and described i-AlGaN layer covers described i-GaN layer left part surface and the described p-GaN layer embedded by right part surface on the surface, and described i-GaN layer does not embed the i-GaN surface of p-GaN layer on the surface;
AlGaN (n-AlGaN) layer of N-shaped doping, described n-AlGaN layer is positioned on described i-AlGaN layer, and described source S contacts with described i-AlGaN layer with described n-AlGaN layer with described drain D;
Grid G ate, described grid G ate are positioned on described n-AlGaN layer, and the width of described grid G ate is less than the width of described n-AlGaN layer.
Enhanced AlGaN as above/GaN High Electron Mobility Transistor (HEMT), further, wherein said substrate is Sapphire Substrate.
Enhanced AlGaN as above/GaN High Electron Mobility Transistor (HEMT), further, wherein said p-GaN layer and described drain D are ohmic contact with contacting of described source electrode, and its thickness meets when without grid voltage, described enhanced AlGaN/GaN High Electron Mobility Transistor (HEMT) can not be opened automatically.
Enhanced AlGaN as above/GaN High Electron Mobility Transistor (HEMT), further, wherein said p-GaN is formed by mixing Mg element.
Enhanced AlGaN as above/GaN High Electron Mobility Transistor (HEMT), further, source S, drain D also can be positioned in AlGaN layer.
Manufacture method as above, further, comprises the following steps:
Step 102, in the assigned address growth p-GaN layer of i-GaN resilient coating;
Step 103, at other position of described i-GaN resilient coating growth i-GaN layer;
Manufacture method as above, further, the assigned address wherein in step 102 refers to left part and the right part of described i-GaN resilient coating, and described other position of i-GaN resilient coating uses mask protection.
Manufacture method as above, further, also comprised the steps: before described step 102
Step 101, at Grown i-GaN resilient coating.
Manufacture method as above, further, described substrate is Sapphire Substrate.
Manufacture method as above, further, also comprises the steps: after described step 103
Step 104, etches and high annealing whole GaN layer, activates doped chemical and guarantees that the defect at GaN interface is few as much as possible.
Step 105, carries out the subsequent step such as epitaxial growth and electrode preparation, passivation of i-AlGaN and n-AlGaN layer until complete the preparation of device.
The invention has the beneficial effects as follows:
The advantage of enhanced AlGaN/GaNHEMT device that the present invention proposes is not need to etch grid G ate and AlGaN layer interface, therefore grid and AlGaN layer interface can be kept well, thus improve the stability of device, owing to not needing to etch, therefore process repeatability is better.
Accompanying drawing explanation
By detailed description done in conjunction with the following drawings, above-mentioned and/or other aspects of the present invention and advantage will become clearer and be easier to understand, and these accompanying drawings just schematically, do not limit the present invention, wherein:
Fig. 1 is the AlGaN/GaNHEMT schematic diagram of prior art;
Fig. 2 is the recessed grid-type AlGaN/GaNHEMT device schematic diagram of prior art;
Fig. 3 is the enhanced AlGaN/GaNHEMT schematic diagram of an embodiment of the present invention;
Fig. 4 is the schematic flow sheet of the enhanced AlGaN/GaNHEMT manufacture method of an embodiment of the present invention.
Embodiment
Hereinafter, the embodiment of enhanced AlGaN of the present invention/GaN High Electron Mobility Transistor is described with reference to the accompanying drawings.
The embodiment recorded at this is specific embodiment of the present invention, for illustration of design of the present invention, is all explanatory and exemplary, should not be construed as the restriction to embodiment of the present invention and the scope of the invention.Except the embodiment recorded at this, those skilled in the art can also adopt other technical scheme apparent based on the content disclosed in the application's claims and specification, and these technical schemes comprise the technical scheme making any apparent substitutions and modifications adopted the embodiment recorded at this.
The accompanying drawing of this specification is schematic diagram, and aid illustration design of the present invention schematically shows shape and the correlation thereof of each several part.Note that the structure of each parts for the ease of clearly showing the embodiment of the present invention, not according to identical scale between each accompanying drawing.Identical reference marker is for representing identical part.
Fig. 1 illustrates the AlGaN/GaNHEMT schematic diagram of prior art.As shown in Figure 1, the basic structure of AlGaN/GaNHEMT is made up of resilient coating, GaN channel layer, intrinsic AlGaN separator and doped with Al GaN layer.AlGaN/GaN heterojunction forms high density two-dimensional electron gas (2DEG) by piezoelectricity and spontaneous polarization effect at heterojunction boundary place, this two-dimensional electron gas has very high mobility, thus makes AlGaN/GaNHEMT have very low conducting resistance.Compared with traditional field-effect transistor (FET), GaNHEMT has high transconductance, the good characteristics such as high saturation current and higher cutoff frequency.
But the AlGaN/GaNHEMT made by common process is depletion type (threshold voltage vt h < 0V).If use negative cut-in voltage, the circuit design of depletion type HEMT is more more complex than the circuit design of enhancement mode (Vth > 0V) HEMT, and this obviously can increase the cost of HEMT circuit.From the angle of application, the advantage that enhancement mode HEMT has depletion type HEMT incomparable.In microwave power amplifier and low noise power amplifier field, enhancement mode HEMT does not need negative electrode voltage, reduces complexity and the cost of circuit; In high-power switchgear field, enhancement mode HEMT can improve the fail safe of circuit; In digital fast circuit application, nitride-based semiconductor, owing to lacking p channel device, cannot form the complementary logic of low-power consumption, and enhancement mode HEMT can alleviate the problem lacking p raceway groove, realizes the circuit structure simplified.Therefore, in speed-sensitive switch, high temperature GaN integrated circuit, radio frequency integrated circuit (RFIC) and microwave monolithic integrated circuit (MMIC), enhancement mode HEMT is indispensable.Therefore be necessary to explore a kind of method, produce the enhanced AlGaN/GaNHEMT device with very large using value.
Fig. 2 illustrates the recessed grid-type AlGaN/GaNHEMT device schematic diagram of prior art.Recessed grid etching is carried out to the AlGaN/GaNHEMT device that common process is made, grid can be reduced to the distance of raceway groove and improve grid for the control of raceway groove, thus effectively can improve the threshold voltage of device, the depletion-mode AlGaN that common process is made/GaNHEMT device becomes enhanced AlGaN/GaNHEMT device.Meanwhile, recessed grid etching can improve device transconductance, thus improves the high frequency performance of AlGaN/GaN, reduces the short-channel effect caused due to long the shortening of grid.
But, the method for this recessed grid etching due to the thickness of AlGaN layer and the accurate control of recessed grid etching depth more difficult, therefore process repeatability is poor, poor to the controllability of threshold voltage.In addition, the plasma used in etching process knows from experience damage interface, affects the stability of device.Therefore, be necessary to propose a kind of other enhanced AlGaN/GaNHEMT device architecture and manufacture method, to avoid the defect of prior art.
Fig. 3 illustrates the enhanced AlGaN/GaNHEMT schematic diagram of an embodiment of the present invention.As shown in Figure 3, described enhanced AlGaN/GaNHEMT comprises:
Substrate;
GaN (i-GaN) layer of involuntary doping, described i-GaN layer is positioned at substrate, and each GaN (p-GaN) layer embedding the doping of one deck p-type in the left part of described i-GaN layer surface and right part surface, but the middle part surface of described i-GaN layer does not embed p-GaN layer;
Source S, described source S is positioned in the p-GaN layer that described i-GaN layer left part is surperficial or right part is surperficial, and the width of described source S is less than the width of this p-GaN layer;
Drain D, described drain D is positioned in another p-GaN layer of described i-GaN layer, and the width of described drain D is less than the width of this p-GaN layer;
AlGaN (i-AlGaN) layer of involuntary doping, described i-AlGaN layer is positioned in the intermediate surface of described i-GaN layer, and described i-AlGaN layer covers described i-GaN layer left part surface and the described p-GaN layer embedded by right part surface on the surface, and described i-GaN layer does not embed the i-GaN surface of p-GaN layer on the surface;
AlGaN (n-AlGaN) layer of N-shaped doping, described n-AlGaN layer is positioned on described i-AlGaN layer, and described source S contacts with described i-AlGaN layer with described n-AlGaN layer with described drain D;
Grid G ate, described grid G ate are positioned on described n-AlGaN layer, and the width of described grid G ate is less than the width of described n-AlGaN layer.
Compare with the recessed grid-type AlGaN/GaNHEMT device shown in Fig. 2 with the conventional AlGaN/GaNHEMT device shown in Fig. 1, the feature of enhanced AlGaN/GaNHEMT device that the present invention proposes is, i-GaN layer, near some GaN for p-type doping of electrode one deck, corresponds to the region covered from source-drain electrode to part of grid pole.The width of described p-GaN layer enables grid G ate cover the interface of p-GaN and two-dimensional electron gas (2DEG), and its thickness meets when without grid voltage, and device can not be opened, and forms good ohmic contact with source-drain electrode.In addition, the doping of the p-type of GaN can by mixing Mg element or other doped chemical epitaxial growths are formed, depending on doping effect and demand.
In the construction shown in fig. 1,2DEG directly contacts with source-drain electrode, when without element leakage larger part when grid voltage in opening, minus gate voltage must be added and make device be in off state.And in enhanced AlGaN/GaNHEMT device that the present invention proposes, exist and be positioned at p-GaN layer below source-drain electrode, not overlapping with grid, its thickness is greater than or equal to the thickness of 2DEG in raceway groove, and width is more than or equal to source electrode or drain width.Because p-GaN and 2DEG interface exists a potential barrier, electronics cannot arrive source electrode, therefore when being in off state without when grid voltage; When grid adds positive voltage, the 2DEG concentration under grid improves, and can be with and highly decline, along with the further increase of voltage, 2DEG side can be with and be declined highly further, and the potential barrier thickness of 2DEG and p-type GaN constantly reduces, until occur then to wear under the effect of source-drain voltage, realize break-over of device.So just achieve the enhancement device that grid-control is often closed.
Compared with the recessed grid-type AlGaN/GaNHEMT device shown in Fig. 2, the advantage of enhanced AlGaN/GaNHEMT device that the present invention proposes is not need to etch grid G ate and AlGaN layer interface, therefore grid and AlGaN layer interface can be kept well, thus improve the stability of device, owing to not needing to etch, therefore process repeatability is better.
Fig. 4 illustrates the schematic flow sheet of the enhanced AlGaN/GaNHEMT manufacturing process of an embodiment of the present invention.As shown in Figure 4, the method comprises the steps:
Step 101, at Grown i-GaN resilient coating;
Particularly, use MOCVD (metallo-organic compound chemical gaseous phase deposition) equipment at Grown i-GaN resilient coating, the lattice constant of described substrate should be close with the lattice constant of GaN, to form good crystallization.Such as, described substrate can be Sapphire Substrate.
Step 102, in the assigned address growth p-GaN layer of i-GaN resilient coating;
Particularly, described assigned address refers to left part and the right part of described i-GaN resilient coating, and except described assigned address, all the other position mask protections, described mask can be photoresist.
Step 103, at other position of described i-GaN resilient coating growth i-GaN layer;
Particularly, remove the mask of described assigned address, at other position of described i-GaN resilient coating growth i-GaN layer.
Step 104, etches and high annealing whole GaN layer;
Particularly, etch and high annealing whole GaN layer, described GaN layer comprises i-GaN layer and p-GaN layer.
Step 105, carries out epitaxial growth and the electrode preparation of i-AlGaN and n-AlGaN layer.
Particularly, the epitaxial growth of i-AlGaN and n-AlGaN layer adopts MOCVD device to carry out, and electrode adopts Grown by Magnetron Sputtering, and carries out the subsequent steps such as Passivation Treatment to electrode, to complete the preparation of whole AlGaN/GaNHEMT device.
Each technical characteristic of above-mentioned disclosure is not limited to that disclosed with combination that is further feature, other combination that those skilled in the art also can carry out between each technical characteristic according to the object of invention, is as the criterion with the object realizing the present invention.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510992401.4A CN105448976A (en) | 2015-12-25 | 2015-12-25 | Enhanced AlGaN/GaN high-electron-mobility transistor (HEMT) and fabrication method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510992401.4A CN105448976A (en) | 2015-12-25 | 2015-12-25 | Enhanced AlGaN/GaN high-electron-mobility transistor (HEMT) and fabrication method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105448976A true CN105448976A (en) | 2016-03-30 |
Family
ID=55558972
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510992401.4A CN105448976A (en) | 2015-12-25 | 2015-12-25 | Enhanced AlGaN/GaN high-electron-mobility transistor (HEMT) and fabrication method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105448976A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110140045A (en) * | 2016-10-13 | 2019-08-16 | 标致雪铁龙汽车股份有限公司 | For detecting the detection sensor including selective high electron mobility transistor of gaseous state or liquid parts |
| CN111223933A (en) * | 2018-11-27 | 2020-06-02 | 北京大学 | Novel epitaxial layer structure for improving threshold voltage of GaN enhanced MOSFET |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101211969A (en) * | 2006-12-28 | 2008-07-02 | 富士通株式会社 | High speed high power nitride semiconductor device and manufacturing method thereof |
| CN101794815A (en) * | 2009-02-04 | 2010-08-04 | 富士通株式会社 | Compound semiconductor device and manufacture method thereof |
| CN102487079A (en) * | 2010-12-03 | 2012-06-06 | 富士通株式会社 | Compound semiconductor device and method of manufacturing same |
| CN104167440A (en) * | 2014-07-30 | 2014-11-26 | 西安电子科技大学 | Enhanced AlGaN/GaN heterojunction field effect transistor |
-
2015
- 2015-12-25 CN CN201510992401.4A patent/CN105448976A/en not_active Application Discontinuation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101211969A (en) * | 2006-12-28 | 2008-07-02 | 富士通株式会社 | High speed high power nitride semiconductor device and manufacturing method thereof |
| CN101794815A (en) * | 2009-02-04 | 2010-08-04 | 富士通株式会社 | Compound semiconductor device and manufacture method thereof |
| CN102487079A (en) * | 2010-12-03 | 2012-06-06 | 富士通株式会社 | Compound semiconductor device and method of manufacturing same |
| CN104167440A (en) * | 2014-07-30 | 2014-11-26 | 西安电子科技大学 | Enhanced AlGaN/GaN heterojunction field effect transistor |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110140045A (en) * | 2016-10-13 | 2019-08-16 | 标致雪铁龙汽车股份有限公司 | For detecting the detection sensor including selective high electron mobility transistor of gaseous state or liquid parts |
| CN111223933A (en) * | 2018-11-27 | 2020-06-02 | 北京大学 | Novel epitaxial layer structure for improving threshold voltage of GaN enhanced MOSFET |
| WO2020107754A1 (en) * | 2018-11-27 | 2020-06-04 | 北京大学 | Epitaxial layer structure for increasing threshold voltage of gan-enhanced mosfet and device fabrication method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9006791B2 (en) | III-nitride P-channel field effect transistor with hole carriers in the channel | |
| JP6554530B2 (en) | Group III nitride transistor using regrowth structure | |
| US9343562B2 (en) | Dual-gated group III-V merged transistor | |
| US10103219B2 (en) | Power semiconductor device and method for manufacturing the same | |
| US9935190B2 (en) | Forming enhancement mode III-nitride devices | |
| US9543424B2 (en) | Method for growing III-V epitaxial layers and semiconductor structure | |
| Liu et al. | Enhancement-mode operation of nanochannel array (NCA) AlGaN/GaN HEMTs | |
| De Jaeger et al. | Au-free CMOS-compatible AlGaN/GaN HEMT processing on 200 mm Si substrates | |
| Su et al. | Enhancement-mode GaN-based high-electron mobility transistors on the Si substrate with a P-type GaN cap layer | |
| Zimmermann et al. | AlN/GaN insulated-gate HEMTs with 2.3 A/mm output current and 480 mS/mm transconductance | |
| KR101562879B1 (en) | Semiconductor device | |
| TWI520332B (en) | Heterostructure semiconductor transistor, heterostructure semiconductor rectifier and method for manufacturing high electron mobility transistor | |
| KR101497725B1 (en) | Cascode circuit employing a depletion-mode, gan-based fet | |
| US7795642B2 (en) | III-nitride devices with recessed gates | |
| Higashiwaki et al. | AlN/GaN insulated-gate HFETs using cat-CVD SiN | |
| JP5406452B2 (en) | Nitride-based transistors and cap and / or inert layers of transistor structures and methods for their manufacture | |
| Lu et al. | High-performance integrated dual-gate AlGaN/GaN enhancement-mode transistor | |
| Wei et al. | Low on-resistance normally-off GaN double-channel metal–oxide–semiconductor high-electron-mobility transistor | |
| US8269259B2 (en) | Gated AlGaN/GaN heterojunction Schottky device | |
| Lanford et al. | Recessed-gate enhancement-mode GaN HEMT with high threshold voltage | |
| CN101562182B (en) | Integrated hemt and a combination, method as well as a system of a horizontal field effect rectifier | |
| Palacios et al. | High-performance E-mode AlGaN/GaN HEMTs | |
| US8900939B2 (en) | Transistor with enhanced channel charge inducing material layer and threshold voltage control | |
| KR101660870B1 (en) | Compensated gate misfet and method for fabricating the same | |
| JP5281748B2 (en) | Passivation of group III nitride devices and method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| C06 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| C10 | Entry into substantive examination | ||
| CB02 | Change of applicant information |
Address after: 518102 Guangdong Province, Baoan District Xixiang street Shenzhen City Tian Yi Lu Chen Tian Bao Industrial District 37 Building 2 floor East Applicant after: SHENZHEN HUAXUN FANGZHOU MICROELECTRONIC SCIENCE & TECHNOLOGY CO., LTD. Applicant after: Shenzhen Huaxunark Technology Co., Ltd. Address before: 518102 Guangdong Province, Baoan District Xixiang street Shenzhen City Tian Yi Lu Chen Tian Bao Industrial District 37 Building 2 floor East Applicant before: SHENZHEN HUAXUN FANGZHOU MICROELECTRONIC SCIENCE & TECHNOLOGY CO., LTD. Applicant before: Shenzhen City Huaxun Fangzhou Technology Co., Ltd. |
|
| COR | Change of bibliographic data | ||
| CB03 | Change of inventor or designer information |
Inventor after: Bi Xiaobin Inventor after: Yao Jianke Inventor after: Ding Qing Inventor after: Wu Guangsheng Inventor after: Huang Yongjiang Inventor after: Li Xiaocong Inventor before: Bi Xiaobin Inventor before: Yao Jianke Inventor before: Ding Qing |
|
| CB03 | Change of inventor or designer information | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160330 |
|
| RJ01 | Rejection of invention patent application after publication |