CN105336570A - Substrate etching method - Google Patents
Substrate etching method Download PDFInfo
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- CN105336570A CN105336570A CN201410333557.7A CN201410333557A CN105336570A CN 105336570 A CN105336570 A CN 105336570A CN 201410333557 A CN201410333557 A CN 201410333557A CN 105336570 A CN105336570 A CN 105336570A
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- lithographic method
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Abstract
A substrate etching method provided in the invention comprises the following steps of a main etching step: etching a graph on a substrate and increasing a bottom width of a profile graph through reducing a substrate surface temperature and lower electrode power during an etching process; an over etching step: continuously etching the substrate, increasing a height of the profile graph through increasing the substrate surface temperature and the lower electrode power and simultaneously modifying a graphic morphology. The main etching step is stopped when a mask layer begins to carry out transverse shrinkage and simultaneously the over etching step begins to carry out. By using the substrate etching method, the ideal graphic morphology can be acquired, and the bottom width and the height of the profile graph can satisfy a technology requirement.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly a kind of substrate lithographic method.
Background technology
PSS (PatternedSapphireSubstrate, graphical sapphire substrate) technology is a kind of method for improving blue-light LED chip light extraction efficiency comparatively popular at present.By producing and testing proof, PSS figure pattern has very large impact to the degree improving light extraction efficiency, wherein, the circular cone pattern (side section is triangle) that sidewall is straight improves the Be very effective of light extraction efficiency because of it, and be subject to increasing welcome, become a kind of technic index comparatively popular at present.Usually, desirable PSS figure pattern requires that the height of its profile graphics (for triangle) is at 1.6 ± 0.1 μm, and bottom width is at 2.6 ± 0.15 μm; Smooth-sided is without radian, and bottom is without obvious turning, as shown in Figure 1.
At present, inductively coupled plasma (InductivelyCoupledPlasma, hereinafter referred to as ICP) equipment is usually adopted to etch Sapphire Substrate.The upper radio system of ICP equipment generally selects 13.56MHz power supply, and coordinates helical coil to produce induction plasma; Lower radio system both can select 13.56MHz power supply, and also can select 2MHz power supply, the two respectively has pluses and minuses: the former easily occurs the upper and lower RF-coupled problem causing energy loss and interference; And the latter can cause the problem of the bottom width deficiency of PSS figure because particle bombardment ability strengthens.
Existing a kind of substrate lithographic method is: select 2MHz power supply, and adopt pure BCl
3gas as etching gas, and mainly comprises the following steps:
Main etch step (MainEtch), for modifying mask pattern, etching forms the base profile of figure simultaneously;
Over etching step (OverEtch), for modifying figure pattern (sidewall and turning), reaches technological requirement to make its size and dimension.
In main etch step, up to standard in order to ensure the leg-of-mutton height of section obtained, just need relatively high etching selection ratio.The parameter configuration of high etching selection ratio is selected usually: lower electrode power (300 ~ 450W), low chamber pressure, low discharge, high-temperature and low back of the body helium pressure.So-called back of the body helium pressure, refer to when carrying out technique, to substrate lower surface and carrying this substrate bogey (such as pedestal, electrostatic chuck) loading end between gap carry helium, in order to regulate substrate surface temperature by carrying out heat exchange with substrate, this helium is back of the body helium pressure towards substrate lower surface applied pressure.In addition, the selection standard of etch period is: stop main etch step when mask thicknesses residue 200 ~ 700nm.Typical parameter configuration is: chamber pressure is 2.5mT; Upper electrode power is 1700W; Lower electrode power is 380W; BCl
3flow be 100sccm; Process time is 1620s; Back of the body helium pressure is 4T.The figure pattern obtained after completing main etch step as shown in Figure 2 A.
In over etching step, in order to improve the energy of physical bombardment, strengthen the ability that turning is modified, the lower chamber pressure of general employing and higher lower electrode power (500 ~ 700W).Typical parameter configuration is: chamber pressure is 2.5mT; Upper electrode power is 1400W; Lower electrode power is 700W; BCl
3flow be 90sccm; Process time is 240s; Back of the body helium pressure is 4T.The figure pattern obtained after completing main etch step as shown in Figure 2 B.
Inevitably there is following problem in above-mentioned substrate lithographic method, that is: in actual applications
Due to process time of main etch step, often accounting is comparatively large, and etching selection is higher, and this makes the figure obtained after completing main etch step have obvious turning, and the height at this turning higher (usually at about 300 ~ 700nm); And the bottom width of profile graphics is less.In addition, after completing main etch step, the surplus of mask is less, and the pattern of mask is the triangle being highly approximately 200 ~ 700nm, as shown in Figure 2.
Over etching step mainly plays the effect of modifying figure pattern, accounting for of its process time is smaller, and etching substrate is continued when the surplus of mask is less and the height at turning is higher, often occur that mask exhausts, and sidewall corner still Problems existing, thus having to continue etching, could to obtain section be leg-of-mutton figure pattern, and then cause the height deficiency of profile graphics, as shown in Figure 3.
Although can obtain comparatively ideal figure pattern by above-mentioned substrate lithographic method, the leg-of-mutton bottom width broadening of its section only at about 2.4 μm, thus cannot meet the technological requirement that bottom width broadening reaches more than 2.6 μm.
Summary of the invention
The present invention is intended at least to solve one of technical problem existed in prior art, and propose a kind of substrate lithographic method, it not only can obtain comparatively ideal figure pattern, and the bottom width of this profile graphics and highly all can meet technological requirement.
Thering is provided a kind of substrate lithographic method for realizing object of the present invention, comprising the following steps:
Main etch step, etched features on substrate, and in etching process, by reducing substrate surface temperature and reducing lower electrode power, increase the bottom width of profile graphics;
Over etching step, continues etching substrate, simultaneously by improving substrate surface temperature and improving lower electrode power, increases the height of profile graphics, modifies figure pattern simultaneously;
Wherein, described main etch step terminates when mask starts cross-direction shrinkage, starts to carry out described over etching step simultaneously.
Preferably, in described main etch step, reduce described substrate surface temperature by improving back of the body helium pressure; In described over etching step, improve described substrate surface temperature by reducing back of the body helium pressure.
Preferably, in described main etch step, reduce described substrate surface temperature by the temperature reducing attemperating unit; In described over etching step, improve described substrate surface temperature by the temperature improving attemperating unit.
Preferably, in described main etch step, the span of described back of the body helium pressure is at 6 ~ 8T.
Preferably, in described over etching step, the span of described back of the body helium pressure is at 3 ~ 4T.
Preferably, in described main etch step, the span of described lower electrode power is at 150 ~ 300W.
Preferably, in described over etching step, the span of described lower electrode power is at 400 ~ 650W.
Preferably, the process time of described over etching step is 1 ~ 1.2 times of the process time of described main etch step.
Preferably, described substrate lithographic method adopts inductively coupled plasma equipment to carry out etching technics to substrate, and the lower radio system of described inductively coupled plasma equipment adopts frequency to be the radio-frequency power supply of 2MHz.
Preferably, the span of upper electrode power is at 1400 ~ 2000W.
The present invention has following beneficial effect:
Substrate lithographic method provided by the invention, it compared with prior art has following advantage:
One, start cross-direction shrinkage (sidewall is about to occur turning) time by making main etch step at mask to terminate, start to carry out over etching step simultaneously, the surplus of mask after main etch step completes can be increased, thus carrying out in over etching step, can avoid because mask is depleted and have to continue etching when the height of sidewall corner is still high, thus cause the problem of the height deficiency of profile graphics.
Its two, main etch step weakens ion bombardment energy by reducing lower electrode power, can realize modifying the primary morphology of mask, and can obtain highly lower sidewall corner at the end of main etch step; Meanwhile, reducing etching selection ratio by reducing substrate surface temperature, the width of profile graphics can be increased.
They are three years old, over etching step is while mask starts cross-direction shrinkage, ion bombardment energy is strengthened by improving lower electrode power, improve etching selection ratio by improving substrate surface temperature simultaneously, the height of profile graphics can be improved, figure pattern is modified simultaneously, thus the comparatively ideal figure pattern of final acquisition.
Thus, substrate lithographic method provided by the invention not only can obtain comparatively ideal figure pattern, and the bottom width of this profile graphics and highly all can meet technological requirement.
Accompanying drawing explanation
Fig. 1 is the electron-microscope scanning figure of desirable figure pattern;
Fig. 2 is the electron-microscope scanning figure of the figure pattern that existing substrate lithographic method obtains after completing main etch step;
Fig. 3 is the electron-microscope scanning figure of the figure pattern that existing substrate lithographic method obtains after completing over etching step.
The FB(flow block) of the substrate lithographic method that Fig. 4 provides for the embodiment of the present invention;
The schematic diagram of the figure pattern that the main etch step of the substrate lithographic method that Fig. 5 A provides for the embodiment of the present invention obtains in different phase;
The electron-microscope scanning figure of the figure pattern that the main etch step of the substrate lithographic method that Fig. 5 B provides for the embodiment of the present invention obtains in different phase;
The schematic diagram of the figure pattern that the main etch step of the substrate lithographic method that Fig. 6 A provides for the embodiment of the present invention obtains in different phase; And
The electron-microscope scanning figure of the figure pattern that the over etching step of the substrate lithographic method that Fig. 6 B provides for the embodiment of the present invention obtains in different phase.
Embodiment
For making those skilled in the art understand technical scheme of the present invention better, below in conjunction with accompanying drawing, substrate lithographic method provided by the invention is described in detail.
The substrate lithographic method that the embodiment of the present invention provides adopts existing plasma processing device to carry out etching technics, preferably, this plasma processing device can be inductively coupled plasma equipment, and it mainly comprises reaction chamber, inductance coil, upper radio system and lower radio system.Wherein, in reaction chamber, be provided with the bogey for carrying substrates, such as pedestal, mechanical chuck or electrostatic chuck etc.And, in reaction chamber, be also provided with attemperating unit, in order to regulate the temperature of substrate.In addition, in the process of carrying out etching technics, to the gap conveying helium between substrate lower surface and the loading end of bogey, substrate surface temperature is regulated in order to play by carrying out heat exchange with substrate, and the effect of the uniformity of raising substrate temperature, helium is back of the body helium pressure towards substrate lower surface applied pressure.Upper radio system is used for being applied with electrode power to inductance coil, in order to etching gas (the such as pure BCl in provocative reaction chamber
3) form plasma; Lower radio system is used for applying lower electrode power, to make plasma etched features on substrate to substrate.Preferably, the lower radio system of inductively coupled plasma equipment adopts frequency to be the radio-frequency power supply of 2MHz, to improve the bombardment ability of plasma intermediate ion.
Substrate lithographic method provided by the invention comprises main etch step and over etching step, these two steps all adopt following etching process to etch substrate, and by adopting different parameter configuration to realize respective function, that is: pass into etching gas to reaction chamber, and open the power supply of upper radio system and lower radio system simultaneously; Further, in etching process, utilize attemperating unit substrate to be adjusted to temperature needed for technique, and carry out heat exchange by helium and substrate and regulate substrate surface temperature.Above-mentioned parameter configuration mainly comprises the kind of etching gas and flow, upper electrode power, lower electrode power, process atmospheric pressures (that is, the chamber pressure of reaction chamber), the temperature of attemperating unit, back of the body helium pressure and process time etc.
The FB(flow block) of the substrate lithographic method that Fig. 2 provides for inventive embodiments.Refer to Fig. 2, substrate lithographic method comprises the following steps:
Main etch step, etched features on substrate, and in etching process, by reducing substrate surface temperature and reducing lower electrode power, increase the width of profile graphics;
Over etching step, continues etching substrate, simultaneously by improving substrate surface temperature and improving lower electrode power, increases the height of profile graphics, modifies figure pattern simultaneously;
Wherein, above-mentioned main etch step starts cross-direction shrinkage at mask (such as photoresist), that is, terminate when sidewall is about to occur turning, starts to carry out over etching step simultaneously.This is compared with prior art advanced by the time point starting to carry out over etching step, alternatively, changes the process time accounting of main etch step and over etching step, that is: reduce the process time of main etch step, increases the process time of over etching step.And, by mask being started the moment of cross-direction shrinkage as the time point starting to carry out over etching step, the surplus of mask after main etch step completes can be increased, thus carrying out in over etching step, can avoid because mask is depleted and have to continue etching when the height of sidewall corner is still high, thus cause the problem of the height deficiency of profile graphics.Preferably, the process time of over etching step is 1 ~ 1.2 times of the process time of main etch step.
Above-mentioned main etch step mainly plays the effect of the width increasing profile graphics, and lower to the requirement of etching selection ratio.Therefore, in main etch step, ion bombardment energy can be weakened by reducing lower electrode power, thus the primary morphology modifying mask can be realized, and highly lower sidewall corner can be obtained at the end of main etch step; Meanwhile, etching selection ratio can be reduced by reducing substrate surface temperature, thus be conducive to the width increasing profile graphics.It should be noted that, so-called reduction lower electrode power, refers to that the lower electrode power (usually in the scope of 300 ~ 450W) adopted relative to prior art decreases, that is, adopts lower lower electrode power.Preferably, in main etch step, the span of lower electrode power is at 150 ~ 300W.
Substrate lithographic method provided by the invention highlights the effect of over etching step more, that is: not only play the effect of modifying figure pattern (modifying sidewall and turning), also play simultaneously and increase the height of profile graphics and the effect of bottom width.Therefore, in over etching step, can while mask starts cross-direction shrinkage, ion bombardment energy is strengthened by improving lower electrode power, improve etching selection ratio by improving substrate surface temperature simultaneously, thus both can improve the height of profile graphics, can modify figure pattern again, and then the comparatively ideal figure pattern of final acquisition.
It should be noted that, in over etching step, the lower electrode power that lower electrode power just adopts relative to main etch step increases, and decreases on the contrary relative to the lower electrode power (usually in the scope of 500 ~ 700W) that prior art adopts.In fact, lower electrode power is both unsuitable too low, also unsuitable too high, this is because: although too low lower electrode power can improve etching selection ratio, the ability of modifying figure pattern can be caused more weak, thus be unfavorable for obtaining desirable figure pattern; Contrary, although too high lower electrode power can strengthen the effect of modifying figure pattern, etching selection ratio can be caused not enough, thus be unfavorable for the height improving profile graphics.Therefore, suitable lower electrode power should be selected, figure pattern can either be modified to obtain, the effect of the height of profile graphics can be increased again.Preferably, in over etching step, the span of lower electrode power is at 400 ~ 650W.
In the present embodiment, in main etch step and over etching step, the mode improving or reduce substrate surface temperature is specially: main etch step and over etching step adopt different back of the body helium pressures respectively, to make the substrate surface temperature of the two different.Particularly, back of the body helium pressure is higher, then exchange rate is higher, thus substrate surface temperature is lower; In contrast, back of the body helium pressure is lower, then exchange rate is lower, thus substrate surface temperature is higher.Therefore, in main etch step, can reduce substrate surface temperature by adopting higher back of the body helium pressure, preferably, the span of back of the body helium pressure is at 6 ~ 8T.In over etching step, can improve substrate surface temperature by adopting lower back of the body helium pressure, preferably, the span of back of the body helium pressure is at 3 ~ 4T.
It should be noted that, in main etch step, back of the body helium pressure is that the back of the body helium pressure (being generally 4T) adopted relative to prior art increases.In over etching step, back of the body helium pressure is that the back of the body helium pressure adopted relative to main etch step decreases, and both there is the situation of reduction relative to the back of the body helium pressure that prior art adopts, and also there is equal situation.
Substrate surface temperature is reduced by improving back of the body helium pressure, can when not reducing the heating-up temperature of attemperating unit, increase the bottom width of profile graphics, namely, both the heating-up temperature of higher attemperating unit had been adopted, the leg-of-mutton bottom width of larger section (after completing main etch step, the leg-of-mutton bottom width broadening of section can reach more than 0.7 μm) can be obtained again.
Certainly, in actual applications, adjustment attemperating unit can also be adopted, directly regulate substrate surface temperature.Particularly, in main etch step, reduce substrate surface temperature by the control temperature reducing attemperating unit; In over etching step, improve substrate surface temperature by the control temperature improving attemperating unit.
In actual applications, the ionization level according to plasma sets upper electrode power, and preferably, the span of upper electrode power is at 1400 ~ 2000W.
The substrate lithographic method adopting the embodiment of the present invention to provide below carries out etching experiment.See also Fig. 5 A-6B, the parameter configuration that main etch step adopts is: chamber pressure is 2.5mT; Upper electrode power is 1600W; Lower electrode power is 200W; BCl
3flow be 90sccm; Process time is 1380s; Back of the body helium pressure is 8T.After completing main etch step, the surplus of mask is more, and remaining mask pattern is trapezoid, and this trapezoidal height is at 1000 ~ 1300nm.And figure pattern is similarly trapezoid, and sidewall corner is about to occur and not yet occur, and the bottom width of trapezoid arrives more than 0.5 μm, as shown in Figure 5 A and 5B.
The parameter configuration that over etching step adopts is: chamber pressure is 2.5mT; Upper electrode power is 1600W; Lower electrode power is 450W; BCl
3flow be 90sccm; Process time is 1620s; Back of the body helium pressure is 4T.After completing over etching step, desirable figure pattern can be obtained, and the bottom width of this profile graphics and highly all can meet the requirement of technique.
Be understandable that, the illustrative embodiments that above execution mode is only used to principle of the present invention is described and adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (10)
1. a substrate lithographic method, is characterized in that, comprises the following steps:
Main etch step, etched features on substrate, and in etching process, by reducing substrate surface temperature and reducing lower electrode power, increase the bottom width of profile graphics;
Over etching step, continues etching substrate, simultaneously by improving substrate surface temperature and improving lower electrode power, increases the height of profile graphics, modifies figure pattern simultaneously;
Wherein, described main etch step terminates when mask starts cross-direction shrinkage, starts to carry out described over etching step simultaneously.
2. substrate lithographic method as claimed in claim 1, is characterized in that, in described main etch step, reduces described substrate surface temperature by improving back of the body helium pressure; In described over etching step, improve described substrate surface temperature by reducing back of the body helium pressure.
3. substrate lithographic method as claimed in claim 1, is characterized in that, in described main etch step, reduces described substrate surface temperature by the temperature reducing attemperating unit; In described over etching step, improve described substrate surface temperature by the temperature improving attemperating unit.
4. substrate lithographic method as claimed in claim 2, it is characterized in that, in described main etch step, the span of described back of the body helium pressure is at 6 ~ 8T.
5. substrate lithographic method as claimed in claim 2, it is characterized in that, in described over etching step, the span of described back of the body helium pressure is at 3 ~ 4T.
6. substrate lithographic method as claimed in claim 1, it is characterized in that, in described main etch step, the span of described lower electrode power is at 150 ~ 300W.
7. substrate lithographic method as claimed in claim 1, it is characterized in that, in described over etching step, the span of described lower electrode power is at 400 ~ 650W.
8. substrate lithographic method as claimed in claim 1, it is characterized in that, the process time of described over etching step is 1 ~ 1.2 times of the process time of described main etch step.
9. substrate lithographic method as claimed in claim 1, it is characterized in that, described substrate lithographic method adopts inductively coupled plasma equipment to carry out etching technics to substrate, and the lower radio system of described inductively coupled plasma equipment adopts frequency to be the radio-frequency power supply of 2MHz.
10. substrate lithographic method as claimed in claim 1, it is characterized in that, the span of upper electrode power is at 1400 ~ 2000W.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102456545A (en) * | 2010-10-21 | 2012-05-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Patterned substrate etching method |
| CN102931071A (en) * | 2011-08-08 | 2013-02-13 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method and device for patterning sapphire substrate |
| US20130059450A1 (en) * | 2011-09-06 | 2013-03-07 | Lam Research Corporation | Etch process for 3d flash structures |
| CN103903964A (en) * | 2014-04-14 | 2014-07-02 | 中国科学院微电子研究所 | Method for passivating films shielded by etching adhesive through fluorine-based gas |
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2014
- 2014-07-14 CN CN201410333557.7A patent/CN105336570A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102456545A (en) * | 2010-10-21 | 2012-05-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Patterned substrate etching method |
| CN102931071A (en) * | 2011-08-08 | 2013-02-13 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method and device for patterning sapphire substrate |
| US20130059450A1 (en) * | 2011-09-06 | 2013-03-07 | Lam Research Corporation | Etch process for 3d flash structures |
| CN103903964A (en) * | 2014-04-14 | 2014-07-02 | 中国科学院微电子研究所 | Method for passivating films shielded by etching adhesive through fluorine-based gas |
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Address after: 100176 No. 8 Wenchang Avenue, Beijing economic and Technological Development Zone Applicant after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Applicant before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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