CN105321836A - Test structure and test method of metal insulator metal (MIM) capacitor - Google Patents
Test structure and test method of metal insulator metal (MIM) capacitor Download PDFInfo
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- CN105321836A CN105321836A CN201510680458.0A CN201510680458A CN105321836A CN 105321836 A CN105321836 A CN 105321836A CN 201510680458 A CN201510680458 A CN 201510680458A CN 105321836 A CN105321836 A CN 105321836A
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- mim capacitor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
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- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention discloses a test structure and test method of a metal insulator metal (MIM) capacitor. The test method comprises the following steps of providing the MIM capacitor, wherein the MIM capacitor comprises an upper metal layer, a lower metal layer, an upper pole plate, a lower pole plate and a dielectric layer, wherein the upper pole plate and the lower pole plate arranged between the upper metal layer and the lower metal layer, the dielectric layer is arranged between the upper pole plate and the lower pole plate, a plurality of through holes are formed at the periphery of the upper pole plate and connected to the upper metal layer and the lower pole plate to form the test structure of the MIM capacitor; and testing the above device to determine whether metal residue exists in the upper pole plate or not. After the through holes are formed at the periphery of the upper pole plate of the MIM capacitor and connected to the upper metal layer and the lower pole plate to form the test structure of the MIM capacitor, and then test is carried out, thus, the situation whether metal residue exists in the upper pole plate of the MIM capacitor or not can be effectively tested, and the risk of short circuit formed with the through holes of the lower pole plate in subsequent process is avoided.
Description
Technical field
The present invention relates to IC manufacturing field, particularly a kind of test structure of MIM capacitor and method of testing.
Background technology
A kind of MIM (MetalinsulatorMetal is had in semiconductor technology, metal-insulator-metal) capacitor, as shown in Figure 1, described MIM capacitor is by the upper metal level 1 parallel with wafer, lower metal layer 2, the additional dielectric layer 5 be positioned in the middle of upper and lower pole plate 3,4 of upper and lower pole plate 3,4 between described upper and lower metal level 1,2 forms, wherein, described upper and lower pole plate 3,4 is drawn by through hole respectively and is connected to the upper metal level 1 of the superiors' connection.The capacitance Controlling Technology of this device is comparatively simple, and uniformity is good, is therefore widely used.
As shown in Figure 2, in the manufacture process of MIM capacitor, problem due to technique may cause the metal of top crown 3 not to be etched totally, causes top crown 3 to there is metal material residual 6, causes in subsequent technique, have the risk forming short circuit with the through hole of bottom crown 4.
But at present also without any test structure and method of testing, Efficient Evaluation can be carried out to this problem of MIM capacitor.
Summary of the invention
The invention provides a kind of test structure and method of testing of MIM capacitor, to solve the above-mentioned technical problem existed in prior art.
For solving the problems of the technologies described above, the invention provides a kind of method of testing of MIM capacitor, comprising:
There is provided MIM capacitor, the dielectric layer that this MIM capacitor comprises upper and lower metal level, is arranged on the upper and lower pole plate between upper and lower metal level and is located between described upper and lower pole plate;
In described top crown surrounding, some through holes are set, described through hole is connected to metal level and bottom crown, form the test structure of MIM capacitor, and the spacing between described through hole with described top crown is produce 90% of minimum spacing or the minimum spacing specified in design rule corresponding to this MIM capacitor technique;
Above-mentioned device is tested, to confirm whether top crown exists metal residual.
As preferably, described through hole is evenly arranged around described top crown surrounding.
As preferably, adopt dielectric layer puncture voltage method of testing, confirm whether top crown exists metal residual.
As preferably, described dielectric layer puncture voltage method of testing is: by the voltage difference between upper and lower pole plate until dielectric layer is breakdown, and record puncture voltage, processes test result, confirms whether top crown exists metal residual.
As preferably, described employing testing chain is tested MIM capacitor test structure, and described testing chain is positioned on wafer Cutting Road.
As preferably, the test structure of described MIM capacitor is arranged in parallel combination.
The present invention also provides a kind of test structure of MIM capacitor, is applied in described method of testing, comprises: upper and lower metal level, the dielectric layer being arranged on the upper and lower pole plate between upper and lower metal level and being located between described upper and lower pole plate; In described top crown surrounding, some through holes are set, described through hole is connected to metal level and bottom crown, and the spacing between described through hole with described top crown is produce 90% of minimum spacing or the minimum spacing specified in design rule corresponding to this MIM capacitor technique.
As preferably, between described upper metal level and top crown, be also provided with through hole.
Compared with prior art, a kind of test structure of MIM capacitor and method of testing, this method of testing comprises: comprising: provide MIM capacitor, the dielectric layer that this MIM capacitor comprises upper and lower metal level, is arranged on the upper and lower pole plate between upper and lower metal level and is located between described upper and lower pole plate; In described top crown surrounding, some through holes are set, described through hole is connected to metal level and bottom crown, form the test structure of MIM capacitor, and the spacing between described through hole with described top crown is produce 90% of minimum spacing or the minimum spacing specified in design rule corresponding to this MIM capacitor technique; Above-mentioned device is tested, to confirm whether top crown exists metal residual.The present invention arranges through hole by the top crown surrounding in MIM capacitor, and make through hole be connected to metal level and bottom crown, after forming the test structure of MIM capacitor, test again, the situation of metal residual can be there is by the Validity Test top crown that goes out MIM capacitor, avoid in subsequent technique, have the risk forming short circuit with the through hole of bottom crown.
Accompanying drawing explanation
Fig. 1 is the structural representation of MIM capacitor in prior art;
Fig. 2 is the structural representation with the MIM capacitor of metal residual in prior art;
Fig. 3 is the schematic diagram of MIM capacitor in the embodiment of the invention;
Fig. 4 is the schematic diagram of the test structure of MIM capacitor in the specific embodiment of the present invention;
Fig. 5 is the schematic top plan view of the test structure of MIM capacitor in the embodiment of the invention;
Fig. 6 is the flow chart of the method for testing of MIM capacitor in the embodiment of the invention.
Shown in Fig. 1 to Fig. 2:
The upper metal level of 1-, 2-lower metal layer, 3-top crown, 4-bottom crown, 5-dielectric layer, 6-metal residual.
Shown in Fig. 3 to Fig. 5:
The upper metal level of 10-, 20-lower metal layer, 30-top crown, 40-bottom crown, 50-dielectric layer, 60-first through hole, 70-second through hole, 80-metal residual.
Embodiment
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.It should be noted that, accompanying drawing of the present invention all adopts the form of simplification and all uses non-ratio accurately, only in order to object that is convenient, the aid illustration embodiment of the present invention lucidly.
Please refer to Fig. 3 to Fig. 6, the method for testing of a kind of MIM capacitor provided by the invention, comprising:
Step 1: MIM capacitor is provided, this MIM capacitor comprises upper and lower metal level 10,20, the dielectric layer 50 being arranged on the upper and lower pole plate 30,40 between upper and lower metal level 10,20 and being located between described upper and lower pole plate 30,40;
Particularly, described upper and lower pole plate 30,40 forms by etching or grinding by metal material, can there is metal residual 80 when not etching clean to top crown 30.Further, the first through hole 60 is provided with between described top crown 30 and upper metal level 10.
Step 2: arrange some second through holes 70 in described top crown 30 surrounding, described second through hole 70 is connected to metal level 10 and bottom crown 40, forms the test structure of MIM capacitor.
Particularly, in order to increase the detectivity optional position of MIM capacitor being occurred to this kind of metal residual 80, therefore, described second through hole 70 is evenly arranged around described top crown 30 surrounding.
Further, in order to detect metal residual 80 little as far as possible, described second through hole 70 is arranged according to producing 90% of minimum spacing or the minimum spacing specified in design rule corresponding to this MIM capacitor technique with the spacing between described top crown 30,
It should be noted that, produce the minimum spacing specified in design rule corresponding to this MIM capacitor technique to refer to: due to MIM capacitor comprise upper and lower pole plate 30,40, through hole and lead-in wire, the through hole of bottom crown 40 can not with the lead short circuit of the through hole of top crown 30, top crown 30 and top crown 30.Due in actual production process, the size of top crown 30, through hole and the lead-in wire produced has certain deviation and (as is respectively ± a, ± b, ± c), simultaneously through hole and top crown 30 and the relative position that goes between also have deviation (as ± d), therefore, in actual production, the spacing of bottom crown through hole and top crown 30 has the deviation of maximum ± (a+b+d), if the spacing at bottom crown through hole and top crown 30 edge is too small, product meeting short circuit because of the deviation of actual process can be caused.Therefore, when production integrated circuit (IC) products, factory can propose a set of design rule to IC designer.Example is designed to MIM capacitor, the board control ability used in conjunction with factory and technological ability, the minimum spacing allowed at regulation bottom crown through hole and top crown edge is greater than the maximum deviation (a+b+d) that technique may occur, ensure aborning, short circuit to be caused because of the deviation of production technology.
Step 3: test the test structure of above-mentioned MIM capacitor, to confirm whether top crown 30 exists metal residual 80.
Particularly, adopt dielectric layer 50 puncture voltage method of testing, confirm whether top crown 30 exists metal residual 80.
Further, described dielectric layer 50 puncture voltage method of testing is: by increasing the voltage difference between top crown 30 and bottom crown 40 gradually until dielectric layer 50 is breakdown, record puncture voltage now, processes test result, confirms whether top crown 30 exists metal residual 80.
As preferably, adopt testing chain to test MIM capacitor test structure, described testing chain is positioned on wafer Cutting Road.As suspected there is metal residual 80 problem in the top crown 30 of MIM capacitor in the fabrication process, then call this testing chain and measure, easy to operate.
As preferably, as shown in Figure 5, the test structure of described MIM capacitor is arranged in parallel combination, can increase the sensitivity of the test structure of MIM capacitor.
Please emphasis with reference to Fig. 3 to Fig. 5, the present invention also provides a kind of test structure of MIM capacitor, be applied in above-mentioned method of testing, comprise: the upper and lower metal level that be arranged in parallel 10,20, to be arranged between upper and lower metal level 10,20 and with described upper and lower metal level 10,20 parallel upper and lower pole plates 30,40 and the dielectric layer 50 that is located between described upper and lower pole plate 30,40; Be provided with the first through hole 60 between upper metal level 10 and top crown 30, described top crown 30 surrounding arranges some second through holes 70, and described second through hole 70 is connected to metal level 10 and bottom crown 40.
By arranging the test structure of above-mentioned MIM capacitor, can place testing chain on wafer Cutting Road, as suspected there is metal residual 80 problem in the top crown 30 of MIM capacitor in the fabrication process, then call this testing chain and measure, easy to operate.
In sum, the invention discloses a kind of test structure and method of testing of MIM capacitor, the method of testing of this MIM capacitor, comprise: MIM capacitor is provided, this MIM capacitor comprises upper and lower metal level 10,20, the dielectric layer 50 being arranged on the upper and lower pole plate 30,40 between upper and lower metal level 10,20 and being located between described upper and lower pole plate 30,40; In described top crown 30 surrounding, some second through holes 70 are set, described second through hole 70 is connected to metal level 10 and bottom crown 40, form the test structure of MIM capacitor, and described second through hole 70 is produce 90% of minimum spacing or the minimum spacing specified in design rule corresponding to this MIM capacitor technique with the spacing between described top crown 30; Above-mentioned device is tested, to confirm whether top crown 30 exists metal residual 80.The present invention arranges the second through hole 70 by top crown 30 surrounding in MIM capacitor, and make the second through hole 70 be connected to metal level 10 and bottom crown 40, after forming the test structure of MIM capacitor, test again, the situation of metal residual 80 can be there is by the Validity Test top crown 30 that goes out MIM capacitor, avoid in subsequent technique, have the risk forming short circuit with the through hole of bottom crown 40.
Obviously, those skilled in the art can carry out various change and modification to invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (8)
1. a method of testing for MIM capacitor, is characterized in that, comprising: provide MIM capacitor, the dielectric layer that this MIM capacitor comprises upper and lower metal level, is arranged on the upper and lower pole plate between upper and lower metal level and is located between described upper and lower pole plate;
In described top crown surrounding, some through holes are set, described through hole is connected to metal level and bottom crown, form the test structure of MIM capacitor, and the spacing between described through hole with described top crown is produce 90% of minimum spacing or the minimum spacing specified in design rule corresponding to this MIM capacitor technique;
Above-mentioned device is tested, to confirm whether top crown exists metal residual.
2. the method for testing of MIM capacitor as claimed in claim 1, it is characterized in that, described through hole is evenly arranged around described top crown surrounding.
3. the method for testing of MIM capacitor as claimed in claim 1, is characterized in that, adopts dielectric layer puncture voltage method of testing, confirms whether top crown exists metal residual.
4. the method for testing of MIM capacitor as claimed in claim 1, it is characterized in that, described dielectric layer puncture voltage method of testing is: by increasing the voltage difference between upper and lower pole plate, until dielectric layer is breakdown, record puncture voltage, test result is processed, confirms whether top crown exists metal residual.
5. the method for testing of MIM capacitor as claimed in claim 1, is characterized in that, adopt testing chain to test MIM capacitor test structure, described testing chain is positioned on wafer Cutting Road.
6. the method for testing of MIM capacitor as claimed in claim 1, is characterized in that, the test structure of described MIM capacitor is arranged in parallel combination.
7. the test structure of a MIM capacitor, it is characterized in that, be applied in the method for testing as described in any one of claim 1-6, comprise: upper and lower metal level, the dielectric layer being arranged on the upper and lower pole plate between upper and lower metal level and being located between described upper and lower pole plate; In described top crown surrounding, some through holes are set, described through hole is connected to metal level and bottom crown, and the spacing between described through hole with described top crown is produce 90% of minimum spacing or the minimum spacing specified in design rule corresponding to this MIM capacitor technique.
8. the test structure of MIM capacitor as claimed in claim 7, is characterized in that, be also provided with through hole between described upper metal level and top crown.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510680458.0A CN105321836B (en) | 2015-10-19 | 2015-10-19 | The test structure and test method of MIM capacitor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510680458.0A CN105321836B (en) | 2015-10-19 | 2015-10-19 | The test structure and test method of MIM capacitor |
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| CN105321836A true CN105321836A (en) | 2016-02-10 |
| CN105321836B CN105321836B (en) | 2018-06-26 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7294544B1 (en) * | 1999-02-12 | 2007-11-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of making a metal-insulator-metal capacitor in the CMOS process |
| US20100155889A1 (en) * | 2008-12-24 | 2010-06-24 | Jin-Youn Cho | Capacitor and method for fabricating the same |
| CN102221668A (en) * | 2010-04-14 | 2011-10-19 | 中芯国际集成电路制造(上海)有限公司 | Method and device for detecting dielectric layer reliability of semiconductor device |
| CN102326248A (en) * | 2009-02-25 | 2012-01-18 | 日本电气株式会社 | Capacitor fabrication method, capacitor fabricating device, capacitor fabricating program, and recording medium |
| CN103364674A (en) * | 2012-03-30 | 2013-10-23 | 北大方正集团有限公司 | Method for judging glass fiber bundle anode leakage and failure |
-
2015
- 2015-10-19 CN CN201510680458.0A patent/CN105321836B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7294544B1 (en) * | 1999-02-12 | 2007-11-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of making a metal-insulator-metal capacitor in the CMOS process |
| US20100155889A1 (en) * | 2008-12-24 | 2010-06-24 | Jin-Youn Cho | Capacitor and method for fabricating the same |
| CN102326248A (en) * | 2009-02-25 | 2012-01-18 | 日本电气株式会社 | Capacitor fabrication method, capacitor fabricating device, capacitor fabricating program, and recording medium |
| CN102221668A (en) * | 2010-04-14 | 2011-10-19 | 中芯国际集成电路制造(上海)有限公司 | Method and device for detecting dielectric layer reliability of semiconductor device |
| CN103364674A (en) * | 2012-03-30 | 2013-10-23 | 北大方正集团有限公司 | Method for judging glass fiber bundle anode leakage and failure |
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| CN105321836B (en) | 2018-06-26 |
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