CN105280657B - 半导体装置及半导体装置的制造方法 - Google Patents
半导体装置及半导体装置的制造方法 Download PDFInfo
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- CN105280657B CN105280657B CN201510321410.0A CN201510321410A CN105280657B CN 105280657 B CN105280657 B CN 105280657B CN 201510321410 A CN201510321410 A CN 201510321410A CN 105280657 B CN105280657 B CN 105280657B
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Abstract
Description
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JP2014140390A JP2016018879A (ja) | 2014-07-08 | 2014-07-08 | 半導体装置および半導体装置の製造方法 |
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JP2016219660A (ja) | 2015-05-22 | 2016-12-22 | ソニー株式会社 | 半導体装置、製造方法、固体撮像素子、および電子機器 |
JP6890004B2 (ja) * | 2016-12-08 | 2021-06-18 | 日本放送協会 | 固体撮像素子およびその製造方法 |
US20180182665A1 (en) * | 2016-12-28 | 2018-06-28 | Invensas Bonding Technologies, Inc. | Processed Substrate |
JP2018129412A (ja) * | 2017-02-09 | 2018-08-16 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置、および半導体装置の製造方法 |
JP7128178B2 (ja) * | 2017-04-04 | 2022-08-30 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置、半導体装置の製造方法、及び電子機器 |
US10879212B2 (en) | 2017-05-11 | 2020-12-29 | Invensas Bonding Technologies, Inc. | Processed stacked dies |
JP2019047043A (ja) * | 2017-09-05 | 2019-03-22 | 日本放送協会 | 積層型半導体素子および半導体素子基板、ならびにこれらの製造方法 |
US10283471B1 (en) * | 2017-11-06 | 2019-05-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Micro-connection structure and manufacturing method thereof |
US10685935B2 (en) * | 2017-11-15 | 2020-06-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Forming metal bonds with recesses |
DE102018103431A1 (de) * | 2018-02-15 | 2019-08-22 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Verbindung zwischen Bauteilen und Bauelement aus Bauteilen |
US11056348B2 (en) * | 2018-04-05 | 2021-07-06 | Invensas Bonding Technologies, Inc. | Bonding surfaces for microelectronics |
US10790262B2 (en) * | 2018-04-11 | 2020-09-29 | Invensas Bonding Technologies, Inc. | Low temperature bonded structures |
US11244916B2 (en) * | 2018-04-11 | 2022-02-08 | Invensas Bonding Technologies, Inc. | Low temperature bonded structures |
US11296044B2 (en) | 2018-08-29 | 2022-04-05 | Invensas Bonding Technologies, Inc. | Bond enhancement structure in microelectronics for trapping contaminants during direct-bonding processes |
JP2020043263A (ja) * | 2018-09-12 | 2020-03-19 | キオクシア株式会社 | 半導体装置およびその製造方法 |
CN109729639B (zh) * | 2018-12-24 | 2020-11-20 | 奥特斯科技(重庆)有限公司 | 在无芯基板上包括柱体的部件承载件 |
JP2020123697A (ja) | 2019-01-31 | 2020-08-13 | キヤノン株式会社 | 半導体装置、半導体ウエハ、機器、製造方法 |
EP3955278A4 (en) * | 2019-05-15 | 2022-04-27 | Huawei Technologies Co., Ltd. | HYBRID BOND STRUCTURE AND HYBRID BOND METHOD |
KR20210025156A (ko) | 2019-08-26 | 2021-03-09 | 삼성전자주식회사 | 반도체 장치 및 그 제조방법 |
JP2021044347A (ja) * | 2019-09-10 | 2021-03-18 | キオクシア株式会社 | 半導体装置 |
GB2589329B (en) * | 2019-11-26 | 2022-02-09 | Plessey Semiconductors Ltd | Substrate bonding |
JP2022179135A (ja) * | 2021-05-21 | 2022-12-02 | キオクシア株式会社 | 半導体装置 |
US12021057B2 (en) * | 2021-08-31 | 2024-06-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structure and semiconductor die |
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CN1467837A (zh) * | 2002-06-06 | 2004-01-14 | ��ʿͨ��ʽ���� | 半导体器件及其制造方法 |
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