CN105244057A - Status register writing method for nonvolatile memory - Google Patents

Status register writing method for nonvolatile memory Download PDF

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Publication number
CN105244057A
CN105244057A CN201510633909.5A CN201510633909A CN105244057A CN 105244057 A CN105244057 A CN 105244057A CN 201510633909 A CN201510633909 A CN 201510633909A CN 105244057 A CN105244057 A CN 105244057A
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status register
data
operation
step
programming
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CN201510633909.5A
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舒清明
薛子恒
潘荣华
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北京兆易创新科技股份有限公司
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Priority to CN201510633909.5A priority Critical patent/CN105244057A/en
Publication of CN105244057A publication Critical patent/CN105244057A/en

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Abstract

The present invention discloses a status register writing method for a nonvolatile memory. The method comprises: steps 1, reading raw data of a status register; step 2, comparing data transmitted by a user with the raw data; step 3, determining whether bit data needing to be erased exists in the data of the user, and if so, performing a pre-programming operation, an erasing operation and a programming operation on the raw data sequentially and ending a write operation process, or otherwise, performing the step 4; and step 4, determining whether the data of the user is same with the raw data, and if so, ending a process of writing the status register, or otherwise, performing the programming operation on the raw data and ending the process of writing the status register. According to the technical scheme provided by an embodiment of the present invention, repeated programming and erasing operations on a storage unit of the status register are reduced, so that the service life of the status register is prolonged, and the product quality is improved.

Description

一种非易失性存储器写状态寄存器的方法 A method of non-volatile memory write status register

技术领域 FIELD

[0001] 本发明涉及非易失性存储器技术领域,尤其涉及一种非易失性存储器写状态寄存器的方法。 [0001] The present invention relates to a non-volatile memory technology, and more particularly relates to a method of non-volatile memory write status register.

背景技术 Background technique

[0002] 半导体存储器包括易失性存储器和非易失性存储器。 [0002] The semiconductor memory includes volatile memory and nonvolatile memory. 易失性存储器在断电时会丢失存储的内容。 Volatile memory when power is lost content store. 非易失性存储器即使在断电时也可以保持存储的内容。 The nonvolatile memory even when the power outage stored contents can be maintained. 非易失性存储器包括只读存储器(ROM,Read-only Memory)、可编程只读存储器(PROM,ProgrammableRed-Only Memory)、电可擦除只读存储器(EEPR0M,Electrically Erasable ProgrammableRead-Only Memory)和闪存(Flash memory)。 Nonvolatile memory can include read only memory (ROM, Read-only Memory), programmable read only memory (PROM, ProgrammableRed-Only Memory), an electrically erasable read-only memory (EEPR0M, Electrically Erasable ProgrammableRead-Only Memory), and Flash memory (Flash memory). 闪存存储器包括NOR(或非)Flash和NAND(与非)Flash0 Comprising the NOR flash memory (or) the Flash and the NAND (NAND) Flash0

[0003] 非易失性存储器由存储阵列组成,每个存储阵列包括大量的存储单元,每个存储单元能够存放I位二进制数据(“O”或“I”)。 [0003] The nonvolatile memory of memory arrays, each memory array comprising a plurality of memory cells, each memory cell capable of storing a binary data bit I ( "O" or "I"). 存储器中的存储单元有一部分被用作为状态寄存器,用户通过发送写状态寄存器指令更新状态寄存器的数据值。 Memory storage unit has a portion of the status register is updated with a status register, the user sends a write status register command data values. 以闪存中的NOR Flash为例,对NOR Flash中的状态寄存器进行写操作,可通过06H指令+01指令+数据来实现。 In an example flash memory NOR Flash, NOR Flash of the status register write, may be implemented by instructions +01 + 06H instruction data.

[0004] 图1是现有技术中对非易失性存储器的状态寄存器进行写操作的流程示意图。 [0004] FIG. 1 is a prior art schematic flow diagram of a write operation of the nonvolatile memory status register. 参见图1,所述写操作具体包括如下步骤: Referring to Figure 1, the write operation includes the following steps:

[0005] 步骤SlOl:对状态寄存器进行预编程操作,将状态寄存器中所有存储单元的阈值电压都调整到编程单元的阈值范围内。 [0005] Step SlOl: the status register pre-programming operation, the threshold voltage of all the memory cells in the status register are adjusted within the range of the threshold value of the programming unit.

[0006] 步骤S102:将编程好的编程单元进行擦除操作,每进行一次擦除操作都要进行擦除校验,如果校验失败再次进行擦除操作。 [0006] the step S102: good programming unit programming erase operation, an erase operation must be performed every erase verify, erase operation If the check fails again.

[0007] 步骤S103:擦除成功后,利用用户发送的数据对状态寄存器中存储单元进行编程操作,每次编程操作都要进行编程校验,如果校验失败再次进行编程操作。 [0007] Step S103: After successfully erased, the user data using the transmission status register memory cell programming operation, a program operation should be carried out each time the programming verification, validation fails if the program operation again.

[0008] 步骤S104:编程成功后,将状态寄存器中存储单元中的数据读出来,放到锁存器中,供芯片工作时使用。 [0008] Step S104: after successful programming, the data state stored in the register unit are read out into latches for use during chip operation.

[0009] 由上述非易失性存储器状态寄存器的写操作流程可以看出,现有技术中,在软件实现中,会重复对寄存器中的存储单元进行编程和擦除操作,增加了对状态寄存器中存储单元的擦除和编程次数,降低了写状态寄存器的整体操作的速度,缩短了状态寄存器的使用寿命,降低了广品品质。 [0009] As can be seen from the above-described write process of the nonvolatile memory status register, the prior art, the software implementation will be repeated register memory cell program and erase operations, an increase of the status register erase and programming times in the memory cell, reducing the write speed of the overall operation of the status register, the status register shorten the life, reduce product quality wide.

发明内容 SUMMARY

[0010] 本发明实施例提供一种非易失性存储器写状态寄存器的方法,以实现节约写状态寄存器的时间以及延长状态寄存器的使用寿命。 [0010] Example embodiments provide a nonvolatile memory status register write method of the present invention, to achieve a time saving status register write and status register extend the life.

[0011] 本发明实施例提供了一种非易失性存储器写状态寄存器的方法,包括: [0011] The present invention provides a method of non-volatile memory write status register, comprising:

[0012] 步骤1、读取状态寄存器的原始数据; [0012] Step 1, the original data read status register;

[0013] 步骤2、比较用户发送的数据与所述状态寄存器的原始数据; [0013] Step 2, the data comparison with the original data transmitted by the user of the status register;

[0014] 步骤3、判断所述用户发送的数据中是否存在需要进行擦除的位数据,若是,则对所述状态寄存器的原始数据依次进行预编程操作、擦除操作、编程操作和结束写操作过程,否则执行步骤4 ; [0014] Step 3, the user determines whether the data transmission needs to be present in the data erasure bits, and if yes, the original data of the status register sequentially pre-program operation, the erase operation, program operation and the write end during operation, otherwise step 4;

[0015] 步骤4、判断所述用户发送的数据和所述状态寄存器的原始数据是否相同,若是,则结束写状态寄存器的过程,否则,对所述状态寄存器的原始数据进行编程操作,结束写状态寄存器的过程。 [0015] Step 4, the original data of the data sent by the user and determines the status register are the same, if the process, the end of the write status register, otherwise, the original data of the status register programming operation, the write end process status register.

[0016] 进一步的,所述预编程操作,包括:预编程校验;判断预编程校验是否成功,若是,则执行擦除操作,否则预编程所述状态寄存器的数据,直至预编程校验成功。 [0016] Further, the pre-programming operation, comprising: a pre-programming verification; determining whether the pre-programmed verification is successful, if yes, performing an erase operation, or preprogrammed data of the status register until the preprogrammed check success.

[0017] 进一步的,所述擦除操作,包括:擦除所述状态寄存器的所有数据;擦除校验;判断擦除校验是否成功,若是,则执行后续操作,否则擦除所述状态寄存器的数据,直至擦除校验成功。 [0017] Further, the erase operation, comprising: erasing all data of said status register; erase verify; determining whether the erase verification is successful, if yes, performing a subsequent operation, or the erasing state data register until the erase verify success.

[0018] 进一步的,所述擦除操作是擦除所述状态寄存器的所有存储单元数据。 [0018] Further, the erase operation data of all memory cells are erased in the status register.

[0019] 进一步的,所述编程操作,包括:编程校验;判断编程校验是否成功,若是,则执行后续操作,否则编程所述状态寄存器的数据,直至编程成功。 [0019] Further, the programming operation, comprising: a programming verification; Analyzing programming verification is successful, if yes, performing the subsequent operation, the program or the data status register until the programming was successful.

[0020] 进一步的,所述编程操作是将所述状态寄存器数据中不同于所述用户发送数据中的位数据,编程为与所述用户发送数据中相同的位数据。 [0020] Further, the data programming operation is a bit in the status register is different from the user data transmission data, is programmed to transmit the user data in the same data bit.

[0021] 进一步的,所述方法在步骤1、读取所述状态寄存器的原始数据之前,还包括:接收用户发送的写状态寄存器的数据。 Before [0021] Further, the method step 1, the status register is read original data, further comprising: receiving a write data sent by the user of the status register.

[0022] 进一步的,所述方法在结束写状态寄存器过程之后,还包括:读取所述状态寄存器的当前数据,并存放到所述非易失性存储器对应的锁存器中。 [0022] Further, the process after the process of writing the status register, further comprising: reading the status register of the current data, the nonvolatile memory and place the corresponding latch.

[0023] 本发明实施例提供的技术方案,通过读取状态寄存器的原始数据,对用户发送的数据和状态寄存器的原始数据进行比较,根据比较结果,对状态寄存器数据进行写操作,加快了写状态寄存器的整体操作速度,减少了对寄存器中的存储单元重复编程和擦除的操作,延长了状态寄存器的使用寿命,提高了产品品质。 [0023] The technical solution provided by the embodiment of the present invention, the raw data sent by the user and a status register by comparing the raw data read status register, based on the comparison, the data status register write, write accelerated the overall operating speed of the status register, reduces register of reprogrammable memory cells and erasing operations, extending the life of the status register, to improve product quality.

附图说明 BRIEF DESCRIPTION

[0024] 图1是现有技术中对非易失性存储器的状态寄存器进行写操作的流程示意图; [0024] FIG. 1 is a prior art schematic diagram of a write operation in process state non-volatile memory registers;

[0025] 图2是本发明实施例一提供的一种非易失性存储器写状态寄存器的方法流程示意图; [0025] FIG. 2 is a schematic diagram of an embodiment of a nonvolatile memory provided in the status register write flowchart of a method embodiment of the present invention;

[0026]图3是本发明实施例二提供的一种非易失性存储器写状态寄存器的方法中预编程操作的流程示意图; [0026] FIG. 3 is a write status register A nonvolatile memory according to a second embodiment of the present invention, the method of operating a schematic flow diagram preprogrammed;

[0027]图4是本发明实施例二提供的一种非易失性存储器写状态寄存器的方法中擦除操作的流程示意图; [0027] FIG. 4 is a schematic diagram of a method according to the second non-volatile memory of the status register write erase operation flow of embodiment of the present invention;

[0028] 图5是本发明实施例二提供的一种非易失性存储器写状态寄存器的方法中编程操作的流程示意图。 [0028] FIG. 5 is a schematic flow diagram of a method according to the second non-volatile memory write status register programming operation embodiment of the present invention.

具体实施方式 Detailed ways

[0029] 下面结合附图和实施例对本发明作进一步的详细说明。 Drawings and embodiments of the present invention will be further described in detail [0029] below in conjunction. 可以理解的是,此处所描述的具体实施例仅仅用于解释本发明,而非对本发明的限定。 It will be appreciated that the specific embodiments described herein are merely to illustrate the invention, not limitation of the invention. 另外还需要说明的是,为了便于描述,附图中仅示出了与本发明相关的部分而非全部结构。 Also to be noted also that, for convenience of description, the accompanying drawings illustrate only some, but not all of the structure associated with the present invention.

[0030] 在更加详细地讨论示例性实施例之前应当提到的是,一些示例性实施例被描述成作为流程图描绘的处理或方法。 [0030] Before discussing in more detail exemplary embodiments should be mentioned that some exemplary embodiments is described as a method or process as depicted in the flowchart. 虽然流程图将各项操作(或步骤)描述成顺序的处理,但是其中的许多操作可以被并行地、并发地或者同时实施。 Although the operations (or steps) as a sequential process flowchart will be described, but in which many of the operations can be performed in parallel, concurrently or simultaneously. 此外,各项操作的顺序可以被重新安排。 Further, the order of the operations may be rearranged. 当其操作完成时所述处理可以被终止,但是还可以具有未包括在附图中的附加步骤。 When the operation is completed the process may be terminated, but may also have additional steps not included in the drawings. 所述处理可以对应于方法、函数、规程、子例程、子程序等等。 The process may correspond to a method, a function, a procedure, a subroutine, a subprogram and so on.

[0031] 实施例一 [0031] Example a

[0032] 图2是本发明实施例一提供的一种非易失性存储器写状态寄存器的方法流程示意图。 [0032] FIG. 2 is a process flow diagram of a nonvolatile memory according to a write status register provided in the present embodiment of the invention. 所述方法适用于对非易失性存储器的状态寄存器进行写操作。 The method is applicable to the status register of the nonvolatile memory write operation. 所述状态寄存器由多个存储单元组成,每个存储单元能够存储一位的二进制数(“O”或“I”)。 The status register by a plurality of memory cells, each memory cell capable of storing a binary number ( "O" or "I") bit. 所述方法具体包括如下步骤: The method includes the following steps:

[0033] 步骤S210、读取状态寄存器的原始数据,继续执行步骤S220 ; [0033] step S210, status register read raw data, proceed to step S220;

[0034] 步骤S220、比较用户发送的数据与所述状态寄存器的原始数据,继续执行步骤S230 ; [0034] step S220, the data comparison with the original data transmitted by the user of the status register, proceed to step S230;

[0035] 步骤S230、判断所述用户发送的数据中是否存在需要进行擦除的位数据,若是,则执行步骤S250,否则执行步骤S240 ; [0035] In step S230, the data bit is determined whether there is a need for erasing data sent by the user, if yes, perform step S250, the else step S240;

[0036] 步骤S240、判断所述用户发送的数据和所述状态寄存器的原始数据是否相同,若是,则执行步骤时S280,否则执行步骤S270 ; [0036] step S240, the original data is determined whether the status register and data sent by the same user, while if yes, perform step S280, the else step S270;

[0037] 步骤S250、对所述状态寄存器的原始数据进行预编程操作,继续执行步骤S260 ; [0037] step S250, the raw data of the status register is pre-programmed operation, proceed to step S260;

[0038] 步骤S260、对所述状态寄存器的原始数据进行擦除操作,继续执行步骤S270 ; [0038] step S260, the raw data of the status register erase operation, continue with step S270;

[0039] 步骤S270、对所述状态寄存器的原始数据进行编程操作,继续执行步骤S280 ; [0039] In step S270, the raw data of the status register programming operation, continue with step S280;

[0040] 步骤S280、结束写状态寄存器过程。 [0040] step S280, the process ends the write status register.

[0041] 其中,所述状态寄存器的原始数据可以是全部为擦除数据、全部为编程数据或者部分为擦除数据。 [0041] wherein the raw data may be a status register all erase data, all or part of the program data erase data. 擦除数据是指状态寄存器中存储单元的阈值电压处于擦除单元的阈值电压范围内。 Refers to erase the data within a threshold voltage range of the threshold voltage of the memory cell status register is erased cells. 编程数据是指状态寄存器中需要编程的存储单元的阈值电压处于编程单元的阈值电压范围内。 It refers to the program data within a threshold voltage range of the threshold voltage of the status register to be programmed in the memory cell programming unit.

[0042] 当用户发送的数据和状态寄存器的原始数据相等时,状态寄存器的原始数据不需要进行任何预编程操作、擦除操作和/或编程操作,因此可以结束写状态寄存器的过程。 [0042] When the values ​​of the original data and the data sent by a user of the status register, the status register of the original data does not require any pre-program operation, the erase operation and / or programming operations, thereby ending the write process status register. 与对所有状态寄存器全部进行预编程操作、擦除操作和编程操作的现有技术相比,本发明的上述操作加快了写状态寄存器的速度,减少了对状态寄存器重复进行擦除操作和编程操作,极大程度地延长了状态寄存器的使用寿命。 Compared with the prior art for all status registers of all pre-program operation, the erase and program operations, the above-described operation of the present invention accelerates the speed of writing the status register, the status register to reduce repeated programming and erase operations , greatly extending the life of the state register.

[0043] 预编程操作是将状态寄存器所有存储单元的阈值电压都调整到编程单元的阈值电压范围内;擦除操作是将状态寄存器所有存储单元的阈值电压都调整到擦除单元的阈值电压范围内;编程操作是将状态寄存器中需要编程的存储单元的阈值电压都调整到编程单元的阈值电压范围内。 [0043] pre-program operation is the threshold voltage of the status register all memory cells are adjusted to within a threshold voltage range of the programming unit; erase operation is the threshold voltage of the status register all memory cells are adjusted to the erased cell threshold voltage range inside; program operation is the threshold voltage of the status register memory cells to be programmed are adjusted within the range of the threshold voltage of a programmed cell.

[0044] 进一步的,所述方法在步骤S210之前,还包括: [0044] Further, the method prior to step S210, further comprising:

[0045] 步骤S200、接收用户发送的写状态寄存器的数据。 [0045] step S200, the write status register receiving data sent by the user.

[0046] 进一步的,所述方法在步骤S280之后,还包括: [0046] Further, the process after step S280, the further comprising:

[0047] 步骤S290、读取所述状态寄存器的当前数据,并存放到所述非易失性存储器对应的锁存器中。 [0047] Step S290, the current data read status register, and place the non-volatile memory corresponding to said latch.

[0048] 本发明实施例一提供的技术方案,通过读取状态寄存器的原始数据,对用户发送的数据和状态寄存器的原始数据进行比较,根据比较结果,对状态寄存器数据进行写操作,加快了写状态寄存器的整体操作速度,减少了对寄存器中的存储单元重复编程和擦除的操作,延长了状态寄存器的使用寿命,提高了产品品质。 [0048] Technical Solution according to a first embodiment of the present invention, the original data and the data sent by a user of the status register by reading the status register is compared to the original data, based on the comparison, the data status register write, accelerated write status register overall operating speed, reduce the reprogrammable memory cells of the register and erasing operations, extending the life of the status register, to improve product quality.

[0049] 实施例二 [0049] Second Embodiment

[0050] 本发明实施例是在实施例一的基础上,对预编程操作、擦除操作和编程操作作进一步的说明。 [0050] Example embodiments of the present invention is based on the first embodiment, to pre-program operation, the erase and program operations will be further described. 图3是本发明实施例二提供的一种非易失性存储器写状态寄存器的方法中预编程操作的流程示意图。 FIG 3 is a schematic flow chart of a method of a nonvolatile memory according to a second embodiment of the present invention, the write status register pre-programming operation. 参见图3,所述预编程操作包括: Referring to Figure 3, the pre-programming operation comprises:

[0051] 步骤S311、预编程校验; [0051] Step S311, the pre-programming verification;

[0052] 步骤S312、判断预编程校验是否成功,若是,则执行步骤S260,否则执行步骤S313 ; [0052] step S312, the pre-determined programming verification is successful, if yes, perform step S260, the else step S313;

[0053] 步骤S313、预编程所述状态寄存器的数据,执行步骤S311。 [0053] step S313, the data preprogrammed in the status register, perform step S311.

[0054] 预编程校验的目的是验证状态寄存器中所有存储单元的阈值电压是否已经调整到编程单元的阈值范围内。 [0054] The purpose of the pre-programming verification is to verify that the threshold voltage of the status register whether or not all the memory cells has been adjusted to within the threshold of the programming unit. 预编程校验成功,表明状态寄存器中所有存储单元的阈值电压已经调整到编程单元的阈值范围内,可以进行擦除操作。 Preprogrammed check is successful, the status register indicates that the threshold voltages of all memory cells has been adjusted to within the threshold range of the programming unit, the erase operation can be performed.

[0055] 上述实施方式中,先进行预编程校验操作,如果校验成功则无需对状态寄存器的数据进行预编程,节约了写状态寄存器的时间,延长了状态寄存器的使用寿命。 [0055] The above-described embodiment, the first pre-programming verification operation, if the verification succeeds then the data in the status register do not need to be pre-programmed to save time the status register write, extend the life of the status register.

[0056]图4是本发明实施例二提供的一种非易失性存储器写状态寄存器的方法中擦除操作的流程示意图。 [0056] FIG. 4 is a schematic flow chart of a method according to the second non-volatile memory write status register in the erase operation of the present invention. 参见图4,所述擦除操作,包括: Referring to Figure 4, the erase operation, comprising:

[0057] 步骤S321、擦除所述状态寄存器的所有数据; [0057] Step S321, erasing all data of said status register;

[0058] 步骤S322、擦除校验; [0058] step S322, the erase verify;

[0059] 步骤S323、判断擦除校验是否成功,若是,则执行步骤S270,否则执行步骤S321。 [0059] step S323, judgment erase verify is successful, and if so, to step S270, otherwise step S321.

[0060] 其中,擦除校验的目的是验证状态寄存器中所有存储单元的阈值电压是否已经调整到擦除单元的阈值范围内。 [0060] wherein the erase verify purpose is to verify the threshold voltage of the status register whether or not all the memory cells has been adjusted to within the threshold of the erased cells. 擦除校验成功,表明状态寄存器中所有存储单元的阈值电压已经调整到擦除单元的阈值范围内,可以进行编程操作。 Erase verify successful, the status register indicates that the threshold voltages of all memory cells has been adjusted to within the threshold of an erased cell, the operation can be programmed.

[0061] 进一步的,所述擦除操作是擦除所述状态寄存器的所有存储单元数据。 [0061] Further, the erase operation data of all memory cells are erased in the status register.

[0062]图5是本发明实施例二提供的一种非易失性存储器写状态寄存器的方法中编程操作的流程示意图。 [0062] FIG. 5 is a schematic flow diagram of a method according to the second non-volatile memory write status register programming operation embodiment of the present invention. 参见图5,所述编程操作,包括: Referring to Figure 5, the programming operation, comprising:

[0063] 步骤S331、编程校验; [0063] Step S331, the programming verification;

[0064] 步骤S332、判断编程校验是否成功,若是,则执行步骤S280,否则执行步骤S333 ; [0064] Step S332, determines the programming verification is successful, if yes, perform step S280, the else step S333;

[0065] 步骤S333、编程所述状态寄存器的数据,执行步骤S331。 [0065] Step S333, the data of the program status register, step S331.

[0066] 编程校验的目的是验证状态寄存器中需要编程的存储单元的阈值电压是否已经调整到编程单元的阈值范围内。 [0066] The object of the programming verification is to verify the status register to be programmed threshold voltage of the memory cell is already adjusted to within the threshold of the programming unit. 编程校验成功,表明状态寄存器中需要编程的存储单元的阈值电压已经调整到编程单元的阈值范围内,可以进行后续操作。 Programming verification is successful, the status register indicates that the threshold voltage of the memory cell to be programmed has been adjusted to within the threshold range of the programming unit, you may proceed.

[0067] 上述实施方式中,先进行编程校验操作,如果编程校验成功则无需对状态寄存器的数据进行编程,节约了写状态寄存器的时间,延长了状态寄存器的使用寿命。 [0067] The above-described embodiments, the first programming verification operation, if the verification succeeds then the program status register do not need to program data, save the status register write time, extend the life of the status register.

[0068] 进一步的,所述编程操作是将所述状态寄存器数据中不同于所述用户发送数据中的位数据,编程为与所述用户发送数据中相同的位数据。 [0068] Further, the data programming operation is a bit in the status register is different from the user data transmission data, is programmed to transmit the user data in the same data bit.

[0069] 本发明实施例提供的技术方案,通过预编程操作、擦除操作和编程操作,确保状态寄存器数据操作过程中数据的准确性,节约了写状态寄存器的时间,延长了状态寄存器的使用寿命。 [0069] Using the technical solutions provided in the embodiments of the present invention, by pre-program operation, the erase and program operations, the status register to ensure the accuracy of data during the data operation, saving time to write the status register, the status register extended life.

[0070] 以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,任何熟悉本专业的技术人员,在不脱离本发明技术方案范围内,当可利用上述揭示的技术内容做出些许变更或修饰等,凡在本发明的精神和原则之内所作的任何修改、等同替换或改进等,均应包含在本发明的保护范围之内。 [0070] The foregoing is only preferred embodiments of the present invention but are not intended to limit the present invention, any Those skilled in the art, without departing from the scope of the technical solution of the present invention, when using the technique disclosed content make other modifications or changes little, and any modifications within the spirit and principle of the present invention, equivalent replacements or improvements should be included within the scope of the present invention.

Claims (8)

1.一种非易失性存储器写状态寄存器的方法,其特征在于,包括: 步骤1、读取状态寄存器的原始数据; 步骤2、比较用户发送的数据与所述状态寄存器的原始数据; 步骤3、判断所述用户发送的数据中是否存在需要进行擦除的位数据,若是,则对所述状态寄存器的原始数据依次进行预编程操作、擦除操作、编程操作和结束写操作过程,否则执行步骤4 ; 步骤4、判断所述用户发送的数据和所述状态寄存器的原始数据是否相同,若是,则结束写状态寄存器的过程,否则,对所述状态寄存器的原始数据进行编程操作,结束写状态寄存器的过程。 CLAIMS 1. A nonvolatile memory write status register, characterized by comprising: step 1, status register read raw data; Step 2 raw data, comparing the user data sent by the status register; step 3, determines whether the data sent by the user's presence needs to be bit data erasure, if yes, the original data of the status register sequentially pre-program operation, the erase operation, program operation and the write operation ends, otherwise step 4; step 4, the original data of the data sent by the user and determines the status register are the same, if the process, the end of the write status register, otherwise, the original data of the status register programming operation ends writing process status register.
2.根据权利要求1所述的方法,其特征在于,所述预编程操作,包括: 预编程校验; 判断预编程是否成功,若是,则执行擦除操作,否则预编程所述状态寄存器的数据,直至预编程校验成功。 2. The method according to claim 1, wherein the pre-program operation, comprising: a preprogrammed check; Analyzing preprogrammed successful, if yes, performing the erasing operation, or the pre-programmed status register data, until successful pre-programming verification.
3.根据权利要求1所述的方法,其特征在于,所述擦除操作,包括: 擦除所述状态寄存器的所有数据; 擦除校验; 判断擦除校验是否成功,若是,则执行后续操作,否则擦除所述状态寄存器的数据,直至擦除校验成功。 3. The method according to claim 1, wherein said erase operation, comprising: erasing all data of said status register; erase verify; determining whether the erase verification is successful, and if yes, execute a subsequent operation, erasing data or the status register until successful erase verify.
4.根据权利要求3所述的方法,其特征在于,所述擦除操作是擦除所述状态寄存器的所有存储单元数据。 4. The method according to claim 3, characterized in that the erasing operation is an erase all memory cells of the data status register.
5.根据权利要求1所述的方法,其特征在于,所述编程操作,包括: 编程校验; 判断编程校验是否成功,若是,则执行后续操作,否则编程所述状态寄存器的数据,直至编程校验成功。 5. The method according to claim 1, wherein said programming operation, comprising: a programming verification; determining whether the programming verification is successful, if yes, performing the subsequent operation, the program or the data status register until programming verification is successful.
6.根据权利要求5所述的方法,其特征在于,所述编程操作是将所述状态寄存器数据中不同于所述用户发送数据中的位数据,编程为与所述用户发送数据中相同的位数据。 6. The method according to claim 5, wherein said programming operation of the status register is different from the user data transmission in the bit data, is programmed to transmit data to the user in the same bit data.
7.根据权利要求1所述的方法,其特征在于,步骤1、读取所述状态寄存器的原始数据之前,还包括: 接收用户发送的写状态寄存器的数据。 7. The method according to claim 1, wherein the step 1, to read the status register before the original data, further comprising: receiving a write data sent by the user of the status register.
8.根据权利要求1所述的方法,其特征在于,结束写状态寄存器过程之后,还包括: 读取所述状态寄存器的当前数据,并存放到所述非易失性存储器对应的锁存器中。 8. The method according to claim 1, characterized in that, after the end of the write process status register, further comprising: reading the status register of the current data, the nonvolatile memory and place the corresponding latch in.
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