CN105242500B - Photoetching system based on ultraviolet broad spectrum Talbot self-imaging - Google Patents
Photoetching system based on ultraviolet broad spectrum Talbot self-imaging Download PDFInfo
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- CN105242500B CN105242500B CN201510758399.4A CN201510758399A CN105242500B CN 105242500 B CN105242500 B CN 105242500B CN 201510758399 A CN201510758399 A CN 201510758399A CN 105242500 B CN105242500 B CN 105242500B
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- 238000003384 imaging method Methods 0.000 title claims abstract description 47
- 238000001259 photo etching Methods 0.000 title claims abstract description 14
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- 238000001228 spectrum Methods 0.000 claims abstract description 32
- 239000002086 nanomaterial Substances 0.000 claims abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
- 239000010703 silicon Substances 0.000 claims abstract description 12
- 238000009826 distribution Methods 0.000 claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 claims abstract description 11
- 230000000694 effects Effects 0.000 claims abstract description 3
- 238000005530 etching Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 9
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- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 2
- 238000001914 filtration Methods 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 239000011734 sodium Substances 0.000 claims description 2
- 238000002211 ultraviolet spectrum Methods 0.000 claims description 2
- 238000002329 infrared spectrum Methods 0.000 claims 1
- 230000000737 periodic effect Effects 0.000 abstract description 10
- 230000003287 optical effect Effects 0.000 abstract description 7
- 238000005286 illumination Methods 0.000 abstract description 3
- 230000010363 phase shift Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 238000011161 development Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
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- 238000000025 interference lithography Methods 0.000 description 2
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- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
Abstract
The invention relates to a photoetching system based on ultraviolet broad spectrum Talbot self-imaging, which mainly utilizes the optical Talbot effect self-imaging principle, and self-imaging light fields of different spectrums and different orders are mutually staggered and incoherently superposed when a periodic mask is illuminated by non-monochromatic ultraviolet light, so that a continuous imageable area is formed at a certain rear distance below the mask. Compared with a self-imaging photoetching system with single-wavelength illumination, the ultraviolet wide-spectrum self-imaging imageable area can be expanded to several millimeters or even centimeter magnitude. When the silicon chip is arranged at any position of the continuous imageable area, self-imaging and phase-shift self-imaging light field distribution with approximately equal intensity can be obtained, so that periodic frequency doubling is realized, and the resolution for manufacturing the periodic micro-nano structure is improved. Meanwhile, when the periodic micro-nano structure is manufactured according to the principle, a complex optical lens system is not needed, and the manufacturing cost is greatly reduced.
Description
Technical field
The invention belongs to microelectronic device and micro processing field, and in particular to one kind based on ultraviolet wide spectrum Taibo from into
The etching system of picture, the resolution ratio for improving fabrication cycle micro-nano structure reduces cost of manufacture.
Background technology
21 century is not only the epoch of information explosion, is also the continuous material time node to Exploring Substructure of Matter of the mankind.
Micro-nano structure also progressively develops into current scientific and technological circle and ground as the connection mankind and important " bridge " of microcosmos, its technology of preparing
The heat subject studied carefully.European and American developed countries and Japan prepare in the micro-nano structure of new, the high-resolution line width of research, having high output ratio
Substantial amounts of financial resource and material resource technically have been put into, and have achieved the achievement in research attracted people's attention, the prostatitis in the world has been walked.
At the same time, as commercial measurement, Aero-Space, display illumination, biologic medical etc. are closely bound up with national development
Production technology constantly improve, have ten in multiple key areas with grating, array of orifices etc. for representative periodicity micro-nano structure
Divide and be widely applied, the market demand is huge.On the other hand, because development in science and technology is maked rapid progress, people are to periodic micro/nano structure
It is required that also harshness increasingly is, it is necessary to which it meets the bars such as large area, high accuracy, pattern complication, short preparation period, yields height simultaneously
Part.
Principle currently used for fabrication cycle micro-nano structure has：(1) close to ＆ contact photolithography methods.For making relatively low essence
The micro-nano structure of degree, principle is simple, and technical threshold is low, and cost is relatively low, but is limited by equipment, masking process, most of
Millimeter magnitude is rested on close to ＆ contact photolithography resolution ratio, it is impossible to adapt to the development of future technology.(2) nano-imprint method.As
A kind of emerging micro-nano technology means, advantage is that can realize that large area, high-precision periodic micro/nano structure make.But it is high-precision
Spend impression block manufacture difficulty it is high, by template limit more seriously grade some problems have to be solved.(3) interference light lithography.
The most typical technological means of manufacturing cycle micro-nano structure the most at this stage, it is possible to achieve large area, mask, high-precision micro-nano graph
Processing.On the other hand, for different lithographic pattern structures, interference lithography needs accurately to adjust optical interference circuit, operation
More difficult control；And interference lithography can graphics processing it is single, flexibility is poor, be not suitable for processing with complex pattern cycle
Micro-nano structure.
Since the self-imaging of micro-nano structure is found, high-precision periodic micro/nano structure has been prepared based on this principle
Research begins to development.But it is most from imaging and photo-etching principle, proximity lithography method is all based on, and utilize periodic structure
The fixation optical field distribution of mask, realizes that large area sends out periodic micro/nano structure miscellaneous by the gap between precise control substrate and mask
Processing.This kind of method can be collectively referred to as " positioning exposure type from imaging and photo-etching art ", be the characteristics of its self-imaging, depth of focus with it is micro-
The micro-nano structure cycle square is directly proportional, therefore when reducing in the figure cycle to be exposed, its depth of focus is great to be shortened.Meanwhile, to ensure to expose
Light graphical quality, this method has strict demand to flatness of substrate, photoresist thickness etc., and needs between mask and substrate
Absolute interstitial carry out nanoscale control, in actual micro-nano preparation process it is extremely difficult realize, it is difficult to be really applied.
In order to overcome existing a variety of deficiencies from imaging and photo-etching from imaging means, ultraviolet width is based on invention describes one kind
Spectrum Taibo can be effectively reduced from imaging and photo-etching art to silicon chip pattern and positioning precision from the photolithography method of image-forming principle
It is required that.
The content of the invention
The present invention propose it is a kind of based on ultraviolet wide spectrum Taibo from the etching system of image-forming principle, can effectively reduce
From requirement of the imaging and photo-etching art to silicon chip pattern and positioning precision.
The technical solution adopted by the present invention is：A kind of etching system being imaged certainly based on ultraviolet wide spectrum Taibo, the photoetching
System is made up of light source, beam collimation extender lens, mask plate and silicon chip；The ultraviolet light of certain spectrum width is produced by light source, is passed through
Beam collimation extender lens is crossed to be irradiated on mask plate, the Taibo that mask plate rear is formed from imaging field areas, Taibo from into
As light field region is divided into the imaging certainly of mask plate and is mutually moved from imaging region；Due to using broad spectrum light source, therefore in Thailand
Uncle is from imaging region, and the Taibo that can form very long range is from imaging region, to silicon chip pattern when greatly reducing photolithographic exposure
With the requirement of precise positioning, and cycle frequency multiplication is realized, improve the resolution ratio of fabrication cycle type micro-nano structure.
Wherein, the etching system course of work is：When wide spectrum ultraviolet lighting is mapped to mask plate, according to Taibo from into
As principle formula：D is the cycle, and λ is different, can form different Taibo image distances from so as to widen Taibo from imaging
Region；When silicon chip to be placed in the optional position in region, it can obtain the approximately equalised imaging certainly of intensity and mutually be moved from imaging
Field distribution, so that frequency multiplication performance period, improves the resolution ratio of imaging.
Wherein, the etching system uses high-pressure sodium lamp light source, and spectrum is included：Ultraviolet light, visible ray and infrared light
Spectrum, by repeatedly filtering, remaining ultraviolet spectra realizes the even light and collimating effect to spectrum by light beam collimation lens.
Present invention advantage compared with prior art is：
(1), ultraviolet wide spectrum of the present invention, can be produced by mercury lamp, compared to other from the light source of imaging lithography,
It is easier to obtain, and it is cheap.
(2), the present invention can work close under photolithographicallpatterned, large area micro-nano photoetching can be realized, with preferable
Technological adaptability.
(3), the present invention is to use wide spectrum lighting system, and can greatly expand can patterned area, i.e. overlength depth of focus.
(4), the present invention uses fixed exposure mode, simplifies experiment mechanism, and imaging certainly can be recorded simultaneously and is mutually moved from
Imaging, realizes the cycle frequency multiplication relative to mask.
(5), intensity control of the present invention is simple, can effectively reduce half, and resolving power can reach or close to diffraction limit.
Brief description of the drawings
Fig. 1 is a kind of structure principle chart of etching system based on ultraviolet wide spectrum Taibo from imaging of the present invention.
Fig. 2 is the curve of spectrum in present invention experiment using light source.
The Taibo that Fig. 3 is measured in being tested for the present invention is from the spectrum information for being imaged light field, it can be seen that the principle
The cycle frequency multiplication of photoengraving pattern can be realized, so as to improve photolithography resolution.
Embodiment
Technical scheme for a better understanding of the present invention, is described in further detail below in conjunction with accompanying drawing.
The present invention be it is a kind of based on ultraviolet wide spectrum Taibo from be imaged etching system, principle as shown in figure 1, the system by
Light source 1, beam collimation extender lens 2, mask plate 3 and silicon chip 6 are constituted.The ultraviolet light of certain spectrum width is produced by light source 1, is passed through
Beam collimation extender lens 2 is irradiated on mask plate 3, and the Taibo that mask plate rear is formed is from imaging field areas.Now, by silicon
Piece is placed in the continuous imageable areas of the light field, in the region, can obtain the approximately equalised imaging 4 certainly of intensity and mutually be moved from
5 optical field distributions are imaged, so that frequency multiplication performance period.
According to Taibo from imaging theory, the complex amplitude transmitance for One Dimension Periodic object can be expressed as：
Wherein, d is the cycle, and n is integer, CnFor Fourier space, x0For lateral coordinates, its spatial frequency spectrum is：
Wherein, fxFor spatial frequency.
In fresnel diffraction, system transter is：
H(fx)=exp (- i π λ zfx 2)exp(-ikz)
Wherein, z is image space distance.
The frequency spectrum that optical field distribution is obtained on sightingpiston is：
Obviously, whenWhen N is integer,Above formula is represented by,
That is diffraction intensity distribution is identical with object | t'(x0)|2=| t (x0)|2, that is to say, thatAway from
From upper, it is observed that the picture of object,It is known as talbot distance.Talbot distance is relevant with wavelength X, therefore, different
Correspondence different talbot distance when the light of wavelength is imaged certainly.
During using ultraviolet broad spectrum light source illumination period mask, different spectrum, the imaging optical field distribution phase certainly of different levels
Mutually staggeredly, coherent superposition, certain rear forms continuous imageable areas below mask.Illuminated compared to Single wavelength from imaging
Field distribution, the imageable areas of ultraviolet wide spectrum imaging can be expanded to several millimeters, or even centimetres, and silicon chip is placed in continuously
During the optional position of imageable areas, it can obtain the approximately equalised imaging certainly of intensity and mutually be moved from imaging field distribution, so that
Frequency multiplication performance period (such as Fig. 3), improves the resolution ratio of photoetching.
Generally, the etching system of the present invention being imaged certainly based on ultraviolet wide spectrum Taibo, with preferable technique
Adaptability, low cost, large area micro-nano photoetching can be realized and with higher photolithography resolution, disclosure satisfy that high efficiency, height
The requirement of precision fabrication cycle type micro-nano structure.The technology and principle that the present invention is not elaborated belong to field personnel institute of the present invention
Known technology.
Claims (3)
1. a kind of etching system being imaged certainly based on ultraviolet wide spectrum Taibo, it is characterised in that：The etching system by light source (1),
Beam collimation extender lens (2), mask plate (3) and silicon chip (6) composition, the ultraviolet light of certain spectrum width, warp are produced by light source (1)
Cross beam collimation extender lens (2) to be irradiated on mask plate (3), mask plate rear forms Taibo from imaging field areas, Taibo
From imaging field areas be divided into mask plate from imaging region (4) be mutually moved from imaging region (5), due to using wide spectrum
Light source, therefore in Taibo from imaging region, the Taibo that can form very long range greatly reduces photolithographic exposure from imaging region
When requirement to silicon chip pattern and precise positioning, and realize cycle frequency multiplication, improve point of fabrication cycle type micro-nano structure
Resolution.
2. the etching system according to claim 1 being imaged certainly based on ultraviolet wide spectrum Taibo, it is characterised in that：The photoetching
In system work process, when wide spectrum ultraviolet lighting is mapped to mask plate, according to Taibo from image-forming principle formula：d
For the cycle, z is image space distance, and λ is wavelength, and N is integer, and λ is different, can form different Taibo image distances from so as to widen
Taibo is from imaging region；When silicon chip to be placed in the optional position in region, intensity can be obtained approximately equalised from imaging distribution
Imaging field distribution is mutually moved from, so that frequency multiplication performance period, improves the resolution ratio of imaging.
3. the etching system according to claim 1 being imaged certainly based on ultraviolet wide spectrum Taibo, it is characterised in that：The photoetching
System uses high-pressure sodium lamp light source, and spectrum is included：Ultraviolet light, visible ray and infrared spectrum, it is remaining by repeatedly filtering
Ultraviolet spectra, the even light and collimating effect to spectrum are realized by light beam collimation lens.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510758399.4A CN105242500B (en) | 2015-11-10 | 2015-11-10 | Photoetching system based on ultraviolet broad spectrum Talbot self-imaging |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510758399.4A CN105242500B (en) | 2015-11-10 | 2015-11-10 | Photoetching system based on ultraviolet broad spectrum Talbot self-imaging |
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| CN105242500A CN105242500A (en) | 2016-01-13 |
| CN105242500B true CN105242500B (en) | 2017-07-11 |
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| CN105954971A (en) * | 2016-05-24 | 2016-09-21 | 四川科奥达技术有限公司 | Ultraviolet photoetching apparatus for restoring grating defect based on Talbot effect |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6172219A (en) * | 1984-09-15 | 1986-04-14 | Canon Inc | Exposure device |
| CN101052921A (en) * | 2004-10-22 | 2007-10-10 | 保罗·谢勒学院 | A system and a method for generating periodic and/or quasi-periodic pattern on a sample |
| CN102981197A (en) * | 2012-12-12 | 2013-03-20 | 中国科学院长春光学精密机械与物理研究所 | Reactive ion beam etching method of broad-band grating |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20030232287A1 (en) * | 2002-06-14 | 2003-12-18 | Bango Joseph J. | Method for stromal corneal repair and refractive alteration using photolithography |
| US8283111B2 (en) * | 2008-09-17 | 2012-10-09 | Tokyo Electron Limited | Method for creating gray-scale features for dual tone development processes |
| WO2012095795A2 (en) * | 2011-01-12 | 2012-07-19 | Eulitha A.G. | Method and system for printing high-resolution periodic patterns |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6172219A (en) * | 1984-09-15 | 1986-04-14 | Canon Inc | Exposure device |
| CN101052921A (en) * | 2004-10-22 | 2007-10-10 | 保罗·谢勒学院 | A system and a method for generating periodic and/or quasi-periodic pattern on a sample |
| CN102981197A (en) * | 2012-12-12 | 2013-03-20 | 中国科学院长春光学精密机械与物理研究所 | Reactive ion beam etching method of broad-band grating |
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