CN105234559A - Miniature etching device for laser channel - Google Patents
Miniature etching device for laser channel Download PDFInfo
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- CN105234559A CN105234559A CN201510723682.3A CN201510723682A CN105234559A CN 105234559 A CN105234559 A CN 105234559A CN 201510723682 A CN201510723682 A CN 201510723682A CN 105234559 A CN105234559 A CN 105234559A
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- etching device
- power meter
- shtter
- miniature
- laser
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Abstract
The invention provides a miniature etching device for a laser channel. The miniature etching device comprises a circuit assembly, a full reflector, a Q-Switch, a crystal cavity, a reflector, a power meter, a Shtter and an optical fiber coupler. According to the specific structure, the full reflector is connected with the Q-Switch, the Q-Switch is connected with the crystal cavity and located between the full reflector and the crystal cavity, the crystal cavity is connected with the reflector and located between the Q-Switch and the reflector, the reflector is connected with the power meter and located between the crystal cavity and the power meter, the power meter is connected with the Shtter and located between the reflector and the Shtter, the Shtter is connected with the optical fiber coupler and located between the power meter and the optical fiber coupler, the optical fiber coupler is connected with an optical fiber and located between the Shtter and the optical fiber, and a circuit assembly is a connection circuit provided for the miniature etching device for the laser channel. The miniature etching device for the laser channel can adapt to the development of the laser etching technology, the laser etching device is simple and practical, and the technology can be developed.
Description
Technical field
The present invention relates to laser equipment field, particularly about the miniature etching device of a kind of laser channeling.
Background technology
Etching technique belongs to photographic chemistry technical field, is a kind of method with photoetching corrosion processing thin type precision metallic goods.Its general principle is the light sensitive characteristic utilizing chemical photosensitive material, photoetching method is adopted at parent metal substrate two sides even application photosensitive material, aperture plate on glued membrane plate is produced mask photosensitive layer mask that profiling shape accurately copies to metal substrate two sides being removed not photosensitive part by development, exposed metallic member is directly sprayed with corrosive liquid in follow-up processing and to contact and by ablation, final obtain needed for geometry and the product technology etching technique of high accuracy size.
Now, research confirms that the essential characteristic of laser ablation is that spontaneous radiation photon constantly produces on laser application technique, directive operation material simultaneously, then excites operation material to produce a lot of new photon (stimulated radiation).A photon in the air part is mapped on speculum, and another part is then run away by the transparency material of side.Light is got back in operation material again under the effect of speculum, then excites particle on high level to low-lying level transition, and produces new photon.In these photons, not at the photon moved along resonator direction of principal axis.Just not with the material effect in chamber.The photon axially moved, two speculum multiple reflections in resonator, make the strength increases of stimulated radiation strong.The particle on high level is impelled constantly to send light.If light amplification produces the vibration of light to (loss such as diffraction, absorption, scattering) when exceeding light loss, make the light be accumulated in axially, from partially reflecting mirror, penetrate this just form laser.
Have again, in the feedback procedure of resonator, we recognize that light can only along the Propagation of resonator, and therefore laser has very high directionality.Spacing again due to two speculums in resonator is different, and light constantly reflects in chamber, is strengthened.And the light of other wavelength is attenuated very soon in chamber, resonator just can select a fixed wave length, illustrates that laser has monochromaticjty.And the brightness height of laser is produced by light amplification.
At present, the research and development on laser etching techniques is in the primary stage, and especially the development process of similar laser channel etch device is slow, is thus necessary to propose the miniature etching device of a kind of laser channeling.
Summary of the invention
Technical problem to be solved by this invention is, provides a kind of laser channeling miniature etching device, can adapt to laser etching techniques development, realize the simple and practical of laser ablation device, technical development.
Object of the present invention is achieved through the following technical solutions:
The miniature etching device of a kind of laser channeling, comprise circuit assembly, be all-trans light microscopic, Q-Switch, crystal intracavity, reflective mirror, power meter, Shtter, fiber coupler.
On concrete structure, the light microscopic that is all-trans is connected with Q-Switch, Q-Switch is connected with crystal intracavity and is in and is all-trans between light microscopic and crystal intracavity, crystal intracavity is connected with reflective mirror and is between Q-Switch and reflective mirror, reflective mirror is connected with power meter and is between crystal intracavity and power meter, power meter is connected with Shtter and is between reflective mirror and Shtter, Shtter is connected with fiber coupler and is between power meter and optical fiber coupler, fiber coupler and Fiber connection are also between Shtter and optical fiber, circuit assembly is the connecting circuit for this kind of miniature etching device of laser channeling provides.This connecting circuit is the visible attainable mode of technical staff within the scope of this area.
Further, described reflective mirror selects reflecting rate to be reflective mirror between 70% ~ 80%.
Further, the crystal in described crystal intracavity is YAG crystal.
Further, the light source in described crystal intracavity is LED light source.
Further, in order to realize the miniature etching device of this kind of laser channeling to the control of energy, described Q-Switch divides X-axis and Y-axis.
The present invention compared to the beneficial effect of prior art is: provide a kind of laser channeling miniature etching device, can adapt to laser etching techniques development, realize the simple and practical of laser ablation device, technical development.
Accompanying drawing explanation
Fig. 1 is the structure principle chart of the miniature etching device of a kind of laser channeling of the present invention.
Fig. 2 is the etching effect figure of the miniature etching device of a kind of laser channeling of the present invention under 900mm/s speed.
Fig. 3 is the etching effect figure under the 500mm/s speed of the miniature etching device of a kind of laser channeling of the present invention.
Fig. 4 is the etching effect figure under the 100mm/s speed of the miniature etching device of a kind of laser channeling of the present invention.
Detailed description of the invention
The present invention to be described in further detail below in conjunction with accompanying drawing and embodiment for the ease of it will be appreciated by those skilled in the art that.
Go out as shown in Figure 1, the miniature etching device of a kind of laser channeling, comprises circuit assembly, the light microscopic 1, Q-Switch2 that is all-trans, crystal intracavity 3, reflective mirror 4, power meter 5, Shtter6, fiber coupler 7, optical fiber 8.
On concrete structure, the light microscopic 1 that is all-trans is connected with Q-Switch2, Q-Switch2 is connected with crystal intracavity 3 and is in and is all-trans between light microscopic 1 and crystal intracavity 3, crystal intracavity 3 is connected with reflective mirror 4 and is between Q-Switch6 and reflective mirror 4, reflective mirror 4 is connected with power meter 5 and is between crystal intracavity 3 and power meter 5, power meter 5 is connected with Shtter6 and is between reflective mirror 4 and Shtter6, Shtter6 is connected with fiber coupler 7 and is between power meter 5 and optical fiber coupler 7, fiber coupler 7 is connected with optical fiber 8 and is between Shtter6 and optical fiber 8, circuit assembly is the connecting circuit for this kind of miniature etching device of laser channeling provides.This connecting circuit is the visible attainable mode of technical staff within the scope of this area.
Further, described reflective mirror 4 selects reflecting rate to be reflective mirror between 70% ~ 80%.
Further, the crystal in described crystal intracavity 3 is YAG crystal.
Further, the light source in described crystal intracavity 3 is LED light source.
Further, in order to realize the miniature etching device of this kind of laser channeling to the control of energy, described Q-Switch6 divides X-axis and Y-axis.
To those skilled in the art, obviously the invention is not restricted to the details of above-mentioned one exemplary embodiment, and when not deviating from spirit of the present invention or essential characteristic, the present invention can be realized in other specific forms.Therefore, no matter from which point, all should embodiment be regarded as exemplary, and be nonrestrictive, scope of the present invention is limited by claims instead of above-mentioned explanation, and all changes be therefore intended in the implication of the equivalency by dropping on claim and scope are included in the present invention.Any Reference numeral in claim should be considered as the claim involved by limiting.
Going out as shown in Figure 2, is in a specific embodiment, adopt the miniature etching device of a kind of laser channeling disclosed in invention to select under 900mm/s speed, the etching effect figure after etching ito thin film glass.
Going out as shown in Figure 3, is in a specific embodiment, adopt the miniature etching device of a kind of laser channeling disclosed in invention to select under 500mm/s speed, the etching effect figure after etching ito thin film glass.
Going out as shown in Figure 4, is in a specific embodiment, adopt the miniature etching device of a kind of laser channeling disclosed in invention to select under 100mm/s speed, the etching effect figure after etching ito thin film glass.
In addition, be to be understood that, although this description is described according to embodiment, but not each embodiment only comprises an independently technical scheme, this narrating mode of description is only for clarity sake, those skilled in the art should by description integrally, and the technical scheme in each embodiment also through appropriately combined, can form other embodiments that it will be appreciated by those skilled in the art that.
Claims (5)
1. the miniature etching device of laser channeling, comprise circuit assembly, it is characterized in that, also comprise the light microscopic that is all-trans (1), Q-Switch(2), crystal intracavity (3), reflective mirror (4), power meter (5), Shtter(6), fiber coupler (7), optical fiber (8), specifically, be all-trans light microscopic (1) and Q-Switch(2) be connected, Q-Switch(2) be connected with crystal intracavity (3) and be between the light microscopic that is all-trans (1) and crystal intracavity (3), crystal intracavity (3) is connected with reflective mirror (4) and is in Q-Switch(6) and reflective mirror (4) between, reflective mirror (4) is connected with power meter (5) and is between crystal intracavity (3) and power meter (5), power meter (5) and Shtter(6) be connected and be in reflective mirror (4) and Shtter(6) between, Shtter(6) be connected with fiber coupler (7) and be between power meter (5) and optical fiber coupler (7), fiber coupler (7) is connected with optical fiber (8) and is in Shtter(6) and optical fiber (8) between.
2. according to the miniature etching device of a kind of laser channeling according to claim 1, it is characterized in that, described reflective mirror (4) selects reflecting rate to be reflective mirror between 70% ~ 80%.
3. according to the miniature etching device of a kind of laser channeling described in claim 1 or 2, it is characterized in that, the crystal in described crystal intracavity (3) is YAG crystal.
4. according to the miniature etching device of a kind of laser channeling described in claim 1 or 2, it is characterized in that, the light source in described crystal intracavity (3) is LED light source.
5., according to the miniature etching device of a kind of laser channeling according to claim 1, it is characterized in that, described Q-Switch(6) point X-axis and Y-axis.
Priority Applications (1)
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CN201510723682.3A CN105234559A (en) | 2015-11-01 | 2015-11-01 | Miniature etching device for laser channel |
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CN201510723682.3A CN105234559A (en) | 2015-11-01 | 2015-11-01 | Miniature etching device for laser channel |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4467172A (en) * | 1983-01-03 | 1984-08-21 | Jerry Ehrenwald | Method and apparatus for laser engraving diamonds with permanent identification markings |
JPS60119786A (en) * | 1983-12-01 | 1985-06-27 | Nec Corp | Q switch laser device |
WO2005064757A1 (en) * | 2003-12-29 | 2005-07-14 | Arvindbhai Lavjibhai Patel | A novel twin side laser resonator |
CN101380692A (en) * | 2008-10-15 | 2009-03-11 | 江苏大学 | Laser surface micro forming device and method |
JP5314275B2 (en) * | 2007-12-14 | 2013-10-16 | 株式会社キーエンス | Laser processing apparatus and method for detecting abnormality of laser processing apparatus |
CN204216399U (en) * | 2014-11-26 | 2015-03-18 | 吉林省科英激光技术有限责任公司 | A kind of laser of novel adjusting energy/power division |
-
2015
- 2015-11-01 CN CN201510723682.3A patent/CN105234559A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4467172A (en) * | 1983-01-03 | 1984-08-21 | Jerry Ehrenwald | Method and apparatus for laser engraving diamonds with permanent identification markings |
JPS60119786A (en) * | 1983-12-01 | 1985-06-27 | Nec Corp | Q switch laser device |
WO2005064757A1 (en) * | 2003-12-29 | 2005-07-14 | Arvindbhai Lavjibhai Patel | A novel twin side laser resonator |
JP5314275B2 (en) * | 2007-12-14 | 2013-10-16 | 株式会社キーエンス | Laser processing apparatus and method for detecting abnormality of laser processing apparatus |
CN101380692A (en) * | 2008-10-15 | 2009-03-11 | 江苏大学 | Laser surface micro forming device and method |
CN204216399U (en) * | 2014-11-26 | 2015-03-18 | 吉林省科英激光技术有限责任公司 | A kind of laser of novel adjusting energy/power division |
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Application publication date: 20160113 |