CN105226147B - 一种氮化物白光发光二极管 - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/645—Heat extraction or cooling elements the elements being electrically controlled, e.g. Peltier elements
Abstract
本发明公开了一种氮化物白光发光二极管,包括:衬底;外延层;N型电极以及P型电极;通过在衬底和外延层上分别形成沟道,并在沟道上形成低导热系数材料的温度隔离层,使单一芯片形成三个独立温区(I/II/III区),在I/II/III区的外延层侧壁和衬底背面形成高导热系数材料的控温层,分别用于控制外延层和衬底的温度,从而根据热膨胀系数差异,分别调节I/II/III区的氮化物和衬底的晶格常数,进而调节氮化物受到的双轴应力,而量子阱受不同双轴应力的作用会改变导带底和价带顶的位置,改变禁带宽度和发光波长,从而通过调节双轴应力可调控同一铟组分的发光二极管实现红、绿、蓝光的发光,实现单一芯片的白光发射。
Description
技术领域
本发明涉及半导体光电器件领域,特别是一种氮化物白光发光二极管。
背景技术
现今,发光二极管(LED),特别是氮化物发光二极管因其较高的发光效率,在普通照明领域已取得广泛的应用。氮化物白光发光二极管一般采用蓝光或紫外芯片激发荧光粉实现白光发射,但存在显色系数不高的问题;而采用红绿蓝(RGB)的集成芯片的方法通常需要3颗芯片进行集成封装,封装难度和成本较高,且稳定性不佳,同时封装完的器件尺寸偏大。
鉴于现有技术的氮化物白光发光二极管存在较多问题影响其商业应用,因此有必出一种新的氮化物白光发光二极管。
发明内容
为解决上述技术问题,本发明的目的在于:提供一种氮化物白光发光二极管,通过在单一芯片制作三个独立温区,分别控制三个独立温区的温度,从而控制衬底和氮化物产生不同的晶格常数,使三个独立温区的氮化物发光二极管的多量子阱受到不同的双轴应力,进而使同一铟组分的氮化物量子阱的导带底和价带顶的位置发生改变,形成不同的禁带宽度和发光波长,实现单一芯片发出红绿蓝光的白光出射。
本发明公开了一种氮化物白光发光二极管,包括:衬底;N型氮化物、量子阱和P型氮化物构成的外延层;N型电极以及P型电极;通过在衬底和外延层上分别形成沟道,并在沟道上形成低导热系数材料的温度隔离层,使单一芯片形成三个独立温区(I/II/III区),在I/II/III区的外延层侧壁和衬底背面形成高导热系数材料的控温层,分别用于控制外延层和衬底的温度,从而根据热膨胀系数差异,分别调节I/II/III区的氮化物和衬底的晶格常数,进而调节氮化物受到的双轴应力,而量子阱受不同双轴应力的作用会改变导带底和价带顶的位置,改变禁带宽度和发光波长,从而通过调节双轴应力可调控同一铟组分的发光二极管实现红、绿、蓝光的发光,实现单一芯片的白光发射。
进一步地,所述衬底为碳化硅或硅或氮化镓或氮化铝或氧化锌。
进一步地,所述量子阱材料为InxGa1-xN/GaN,其中0<x<1,单一芯片的铟组分x相同,三个独立温区I/II/III的量子阱的铟组分x相同,优选铟In组分x=0.15~0.25。
进一步地,所述在衬底上形成的沟道与在外延层上形成的沟道在垂直方向上下对应。
进一步地,所述在衬底上形成的沟道宽度为10nm~100μm,优选500nm;深度为100~650μm,优选150μm。
进一步地,所述在外延层上形成的沟道宽度为10nm~100μm,优选500nm;深度为10nm~5μm,优选2μm。
进一步地,所述沟道的形成方式为干法蚀刻或者湿法蚀刻或者二者结合。
进一步地,所述低导热系数材料的温度隔离层、高导热系数材料的控温层的形成方式为干法镀膜或者湿法镀膜或者二者结合。
进一步地,所述低导热系数的温度隔离层材料的导热系数<1W/(m·K)。
进一步地,所述高导热系数的控温层材料的导热系数为>100W/(m·K)。
附图说明
图1为本发明实施例的一种氮化物白光发光二极管的同一铟组分多量子阱在受到不同应力作用下的波长变化示意图。
图2为本发明实施例的一种氮化物白光发光二极管在蚀刻完沟道并沉积低导热系数材料的温度隔离层的示意图。
图3为本发明实施例的一种氮化物白光发光二极管的完整示意图。
图4为图3的俯视图。
图示说明:100:衬底;101:N型氮化物;102:N型电极;103:多量子阱;104:P型氮化物;105:P型电极;106a:氮化物一侧低导热系数的温度隔离层;106b:衬底一侧低导热系数的温度隔离层;107a/b/c:I/II/III的三个温区的氮化物侧壁沉积的高导热系数的控温层;108a/b/c:I/II/III的三个温区的衬底侧壁沉积的高导热系数的控温层。
具体实施方式
以下结合附图和具体实施例对本发明作进一步的详细描述,有关本发明的相关技术内容,特点与功效,将可清楚呈现。
下面结合实施例和附图对本发明的具体实施方式做进一步的说明。
本发明所提出的一种的氮化物白光发光二极管,其原理如图1所示。相同铟组分(x=0.15~0.25)的氮化物发光二极管,在受到不同双轴应力的作用下,多量子阱InxGa1-xN/GaN导带底和价带顶的位置会产生变化,导致禁带宽度发生变化,使相同铟组分的氮化物发光二极管可发射紫外至红外的光,实现发光波长的调控。因此,可通过调控氮化物发光二极管的双轴应力来控制发光波长,实现单一芯片不同区域发出红绿蓝光,从而出射白光。
请参照图2,为了实现单一芯片的红绿蓝(RGB)的白光出射,首先,利用金属有机化学气相沉积(MOCVD)在衬底100上依次外延生长N型氮化物101、多量子阱103和P型氮化物104构成的外延层,再通过光刻技术分别在P型氮化物104和N型氮化物102上,沉积形成P型电极105和 N型电极102。然后,通过光刻技术从单一芯片的P型氮化物,由上至下采用干法蚀刻方式出2条宽度为500nm,深度为2μm的沟道,并在沟道中采用干法镀膜方式沉积低导热系数材料的温度隔离层106a,该温度隔离层材料的导热系数<1W/(m·K),优选石棉或石蜡;将衬底100减薄至250μm并抛光,从衬底背面由下至上蚀刻出2条宽度为500nm,深度为150μm的沟道,该沟道与在外延层上形成的沟道在垂直方向上下对应,并在沟道中采用干法镀膜方式沉积低导热系数材料的温度隔离层106b,该温度隔离层材料的导热系数<1W/(m·K),优选石棉或石蜡,从而形成三个独立温区(I/II/III区),用于分别控制单一芯片各温区的氮化物外延层和衬底的温度。
接着,请参照图3和图4,利用光刻技术在氮化物外延层的温度隔离层106a旁湿法蚀刻出4条宽度为500nm,深度为2μm的沟道,并在4条沟道及单一芯片的外侧壁采用干法镀膜方式沉积高导热系数的控温层107a/b/c,该控温层材料的导热系数为>100W/(m·K),优选铜或银或碳化硅;同时,在衬底背面采用湿法镀膜方式沉积高导热系数的控温材料108a/b/c,从而可通过控温层材料分别控制I/II/III温区的氮化物和衬底的温度,进而可根据热膨胀系数精确地控制三个独立温区的氮化物和衬底的晶格常数,调控氮化物量子阱受到的应力,从而改变禁带宽度和发光波长,实现同一铟组分的氮化物芯片发射红、绿、蓝光,实现单一芯片的白光发射。例如,采用绿光外延片,发光波长为455nm,调控控温材料107b/108b,降低II区的氮化物的温度,升温II区蓝宝石衬底的温度,使氮化物受到张应力作用,与原来的应力相抵消,从而受到的应力为0%,使绿光芯片发出绿光;同时,调控控温材料107a/108a以及107c/108c,升温I区的氮化物温度,降低I区的衬底温度,使I区氮化物受到上升的压应力作用,从而调控带隙发出红光;降低III区的氮化物温度,提升III区的衬底温度,使氮化物受到上升的张应力作用,最终使III区氮化物受到压应力作用,调控带隙发出蓝光。通过温度控制使同一组分的绿光外延片可发出红、绿、蓝光,实现白光出射。
以上实施方式仅用于说明本发明,而并非用于限定本发明,本领域的技术人员,在不脱离本发明的精神和范围的情况下,可以对本发明做出各种修饰和变动,因此所有等同的技术方案也属于本发明的范畴,本发明的专利保护范围应视权利要求书范围限定。
Claims (10)
1.一种氮化物白光发光二极管,包括:衬底;N型氮化物、量子阱和P型氮化物构成的外延层;N型电极以及P型电极;通过在衬底和外延层上分别形成沟道,并在沟道上形成低导热系数材料的温度隔离层,使单一芯片形成三个独立温区:I/II/III区,在I/II/III区的外延层侧壁和衬底背面形成高导热系数材料的控温层,分别用于控制外延层和衬底的温度,从而根据热膨胀系数差异,分别调节I/II/III区的氮化物和衬底的晶格常数,进而调节氮化物受到的双轴应力,而量子阱受不同双轴应力的作用会改变导带底和价带顶的位置,改变禁带宽度和发光波长,从而通过调节双轴应力可调控同一铟组分的发光二极管实现红、绿、蓝光的发光,实现单一芯片的白光发射。
2.根据权利要求1所述的一种氮化物白光发光二极管,其特征在于:所述衬底为碳化硅或硅或氮化镓或氮化铝或氧化锌。
3.根据权利要求1所述的一种氮化物白光发光二极管,其特征在于:所述量子阱材料为InxGa1-xN/GaN,其中0<x<1,单一芯片的三个独立温区量子阱的铟组分相同。
4.根据权利要求1所述的一种氮化物白光发光二极管,其特征在于:所述在衬底上形成的沟道与在外延层上形成的沟道在垂直方向上下对应。
5.根据权利要求1所述的一种氮化物白光发光二极管,其特征在于:所述在衬底上形成的沟道宽度为10nm~100μm,深度为100~650μm。
6.根据权利要求1所述的一种氮化物白光发光二极管,其特征在于:所述在外延层上形成的沟道宽度为10nm~100μm,深度为10nm~5μm。
7.根据权利要求1所述的一种氮化物白光发光二极管,其特征在于:所述沟道的形成方式为干法蚀刻或者湿法蚀刻或者二者结合。
8.根据权利要求1所述的一种氮化物白光发光二极管,其特征在于:所述低导热系数材料的温度隔离层、高导热系数材料的控温层的形成方式为干法镀膜或者湿法镀膜或者二者结合。
9.根据权利要求1所述的一种氮化物白光发光二极管,其特征在于:所述低导热系数的温度隔离层材料的导热系数<1W/(m·K)。
10.根据权利要求1所述的一种氮化物白光发光二极管,其特征在于:所述高导热系数的控温层材料的导热系数为>100W/(m·K)。
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CN201510689197.9A CN105226147B (zh) | 2015-10-23 | 2015-10-23 | 一种氮化物白光发光二极管 |
PCT/CN2016/097761 WO2017067332A1 (zh) | 2015-10-23 | 2016-09-01 | 一种氮化物白光发光二极管 |
US15/687,458 US10026867B2 (en) | 2015-10-23 | 2017-08-26 | Nitride white-light light-emitting diode |
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CN107017274B (zh) * | 2017-03-28 | 2019-08-20 | 厦门市三安光电科技有限公司 | 一种led显示组件及其制作方法 |
CN108133995A (zh) * | 2017-12-20 | 2018-06-08 | 西安智盛锐芯半导体科技有限公司 | 基于蓝光材料和红光材料的led光源制备方法及led芯片 |
CN107946423A (zh) * | 2017-12-20 | 2018-04-20 | 西安智盛锐芯半导体科技有限公司 | 基于GaN材料的RGBW四色LED芯片及其制备方法 |
CN108054250B (zh) * | 2017-12-20 | 2022-12-16 | 山东晶大光电科技有限公司 | 基于横向排布的四色led制备方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102095093A (zh) * | 2010-11-16 | 2011-06-15 | 东莞市科磊得数码光电科技有限公司 | 一种新型的大功率led集成光源 |
CN102214651A (zh) * | 2011-05-25 | 2011-10-12 | 映瑞光电科技(上海)有限公司 | 一种led像素单元器件结构及其制备方法 |
CN103296046A (zh) * | 2012-03-05 | 2013-09-11 | 上海微电子装备有限公司 | 一种led发光器件 |
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Publication number | Priority date | Publication date | Assignee | Title |
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US6777883B2 (en) * | 2002-04-10 | 2004-08-17 | Koninklijke Philips Electronics N.V. | Integrated LED drive electronics on silicon-on-insulator integrated circuits |
CN2643486Y (zh) * | 2003-08-01 | 2004-09-22 | 艾笛森光电股份有限公司 | 半导体光源 |
JP4359263B2 (ja) * | 2005-05-18 | 2009-11-04 | ローム株式会社 | 半導体発光装置 |
CN101582473B (zh) * | 2008-05-13 | 2011-05-04 | 北京大学 | 通过应力调节led发光波长的方法及相应的白光led |
US20100006873A1 (en) * | 2008-06-25 | 2010-01-14 | Soraa, Inc. | HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaN |
CN102130143B (zh) * | 2010-09-28 | 2012-11-28 | 映瑞光电科技(上海)有限公司 | 白色led芯片及其形成方法 |
WO2015123566A1 (en) * | 2014-02-14 | 2015-08-20 | The Regents Of The University Of California | Monolithically integrated white light-emitting devices |
CN105226147B (zh) * | 2015-10-23 | 2017-08-18 | 厦门市三安光电科技有限公司 | 一种氮化物白光发光二极管 |
-
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102095093A (zh) * | 2010-11-16 | 2011-06-15 | 东莞市科磊得数码光电科技有限公司 | 一种新型的大功率led集成光源 |
CN102214651A (zh) * | 2011-05-25 | 2011-10-12 | 映瑞光电科技(上海)有限公司 | 一种led像素单元器件结构及其制备方法 |
CN103296046A (zh) * | 2012-03-05 | 2013-09-11 | 上海微电子装备有限公司 | 一种led发光器件 |
Non-Patent Citations (1)
Title |
---|
应变对InGaN/GaN量子阱发光的影响;王钇心;《中国优秀硕士学位论文全文数据库 基础科学辑》;20150930;全文 * |
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