CN105206741A - Magnetic tunnel junction unit and method for preparing same - Google Patents
Magnetic tunnel junction unit and method for preparing same Download PDFInfo
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- CN105206741A CN105206741A CN201410283814.0A CN201410283814A CN105206741A CN 105206741 A CN105206741 A CN 105206741A CN 201410283814 A CN201410283814 A CN 201410283814A CN 105206741 A CN105206741 A CN 105206741A
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Abstract
The invention discloses an annular magnetic tunnel junction unit and a method for preparing the same. The annular magnetic tunnel junction unit comprises a lower electrode, an annular magnetic tunnel junction and an upper electrode. The annular magnetic tunnel junction is arranged above the lower electrode, and the upper electrode is arranged above the annular magnetic tunnel junction. The annular magnetic tunnel junction unit further comprises a conductive connecting layer arranged between the upper electrode and the annular magnetic tunnel junction. According to the annular magnetic tunnel junction unit, the conductive connecting layer is additionally arranged between the annular magnetic tunnel junction and the upper electrode. In the forming process of the upper electrode, the conductive connecting layer provides a large reference size for the alignment of the upper electrode. Moreover, even if the upper electrode is slightly deviated in the process of alignment, the conductive connecting layer can form a conductive path between the upper electrode and the upper surface of the annular magnetic tunnel junction to prevent an open circuit between the upper electrode and the annular magnetic tunnel junction.
Description
Technical field
The application relates to field of semiconductor manufacture, in particular to a kind of annular magnet tunneling junction cell and the method preparing annular magnet tunneling junction cell.
Background technology
In recent years, along with the rapid raising of semiconductor technology, require that semiconductor device is to light, thin, short and smallization development.Also mean that semiconductor device is to high speed, high integration, low power consumption future development simultaneously.As the important member in semiconductor device family, the development of magnetic RAM (MRAM) also becomes the focal point of people.
Magnetic RAM device is widely used as nonvolatile memory.In a mram, data are stored by the magnetic state of memory element.The magnetic tunneling junction cell (MTJ) of transistor and storage data is generally included in MRAM.Existing magnetic tunneling junction cell comprises top electrode, bottom electrode and is positioned at middle MTJ.And MTJ usually has and comprises magnetic layer, tunnel barrier layer and upper magnetosphere.Wherein, lower magnetosphere is connected with bottom electrode, and upper magnetosphere is connected with top electrode.Between upper/lower electrode, the periphery of MTJ and centre be also filled with protective layer, MTJ to be isolated.The requirement that MTJ power is low in order to meet, drive current is little, is set to loop configuration by each layer (magnetic layer, tunnel barrier layer and upper magnetosphere) of MTJ usually.
But undersized due to above-mentioned each loop configuration layer, is formed in the process of top electrode, probably occurs the problem being difficult to aim at, make to power on and very easily depart from, thus affect the conductivity between top electrode and upper magnetosphere above upper magnetosphere.In addition, in the forming process of top electrode, also easily there is the problem of overetch, injure each loop configuration layer, the final serviceability reducing magnetic tunneling junction cell.
Summary of the invention
The application aims to provide a kind of annular magnet tunneling junction cell and prepares the method for annular magnet tunneling junction cell, the problem of the poorly conductive easily occurred with the top electrode and annular magnet tunnel junction that solve annular magnet tunneling junction cell in prior art.
To achieve these goals, according to an aspect of the application, provide a kind of annular magnet tunneling junction cell, comprise bottom electrode, top electrode and the annular magnet tunnel junction between bottom electrode and top electrode; Wherein, annular magnet tunneling junction cell also comprises the conductive tie layers be arranged between top electrode and annular magnet tunnel junction.
Further, the upper surface of above-mentioned annular magnet tunnel junction is positioned within the region that conductive tie layers covers, and the lower surface of top electrode is positioned within the region that conductive tie layers covers.
Further, the distance between the external margin of above-mentioned annular magnet tunnel junction and conductive tie layers external margin is
distance between the external margin of top electrode and conductive tie layers external margin is
Further, the thickness of above-mentioned conductive tie layers is 1/12 ~ 1/10 of top electrode thickness.
Further, the material of above-mentioned conductive tie layers is metal nitride.
According to the another aspect of the application, provide a kind of method preparing annular magnet tunneling junction cell, it comprises the following steps: provide the substrate being formed with bottom electrode, and forms annular magnet tunnel junction on the bottom electrode; The conductive tie layers covering annular MTJ is formed at annular magnet tunnel junctions; And top electrode is formed on conductive tie layers.
Further, the method preparing annular magnet tunneling junction cell comprises the following steps: form annular magnet tunnel junction on the bottom electrode; Above bottom electrode, form the first insulating barrier of upper surface and annular magnet tunnel junction upper surface flush around annular magnet tunnel junction outer wall; The conductive tie layers covering annular MTJ upper surface is formed at annular magnet tunnel junctions; Above the first insulating barrier, form second insulating barrier with groove structure, groove structure is formed at the top of conductive tie layers; Top electrode is formed in groove structure.
Further, the step forming the first insulating barrier of upper surface and annular magnet tunnel junction upper surface flush comprises: above bottom electrode, forms the first preparation insulating barrier covering annular MTJ; With the upper surface of annular magnet tunnel junction for stop-layer, planarization first preparation insulating barrier, forms the first insulating barrier of upper surface and annular magnet tunnel junction upper surface flush.
Further, above-mentioned first insulating barrier comprises the Part I covering bottom electrode upper surface, and the Part II be looped around on annular magnet tunnel junction sidewall, the step forming the first insulating barrier of upper surface and annular magnet tunnel junction upper surface flush comprises: along the upper surface of bottom electrode, and the outer surface of annular magnet tunnel junction forms the first preparation insulating barrier; First preparation insulating barrier forms the first preparation dielectric layer; With the upper surface of annular magnet tunnel junction for stop-layer, planarization first preparation insulating barrier and the first preparation dielectric layer, form the first insulating barrier and the first medium layer of the upper surface flush of upper surface and annular magnet tunnel junction; Wherein, first medium layer is formed at the top of the Part I of the first insulating barrier, and around the Part II of the first insulating barrier.
Further, after the step forming annular magnet tunnel junction, also comprise the step being formed and cover the protective medium preparation layers of bottom electrode and annular magnet tunnel junction outer surface, formed in the step of the first preparation insulating barrier, protective medium preparation layers forms the first preparation insulating barrier; In the step of formation first insulating barrier; with the upper surface of annular magnet tunnel junction for stop-layer; planarization first preparation insulating barrier, protective medium preparation layers and optional first preparation dielectric layer, form the first insulating barrier, protective dielectric layer and optional first medium layer.
Further, form the step of conductive tie layers to comprise: form the conduction connection preparation layers covering annular magnet tunnel junctions surface, the first insulating barrier upper surface, optional first medium layer upper surface and optional protective dielectric layer continuously; Position etching conductive according to annular magnet tunnel junctions surface connects preparation layers, forms the conductive tie layers that diameter is greater than the outer annular diameter of annular magnet tunnel junction.
Further, above-mentioned first insulating barrier comprises the Part I covering bottom electrode upper surface, and the Part II be looped around on annular magnet tunnel junction outer wall, formed in the step of conductive tie layers, etching conductive connects preparation layers, form edge line to overlap with the outward flange of the Part II of the first insulating barrier, or edge line be positioned at the Part II of the first insulating barrier outward flange inside conductive tie layers.
Further, form the step with the second insulating barrier of groove structure to comprise: form the second preparation insulating barrier at the upper surface of conductive tie layers, exposed described first insulating barrier, optional described first medium layer and optional described protective dielectric layer; Corresponding on the position of conductive tie layers in the second preparation insulating barrier, etching forms described second insulating barrier after forming groove structure.
Further, formed in the step of the second insulating barrier, before etching forms the step of groove structure, also comprise the step that planarization second preparation insulating barrier forms the second transition insulating barrier, and corresponding on the position of conductive tie layers in the second transition insulating barrier, etching forms groove structure, forms the second insulating barrier.
Further, formed in the step of the second insulating barrier, also comprise before etching forms the step of groove structure: form the second preparation dielectric layer at the upper surface of the second preparation insulating barrier; Planarization second preparation dielectric layer, forms the second transition medium layer of upper surface flush; Formed in etching in the step of groove structure, corresponding to the position of conductive tie layers, etch the second transition medium layer and the second preparation insulating barrier downwards successively, form groove structure.
Further, the step forming top electrode comprises: in described groove structure, form the copper seed layer covering groove inner wall; Plated metal copper in the groove structure forming copper seed layer, forms top electrode;
Further, the diameter of above-mentioned conductive tie layers is 1.3 ~ 1.5 times of annular magnet tunnel junction outer annular diameter.
Further, the material of above-mentioned protective dielectric layer is low-temperature nitride; The material of the first insulating barrier and the second insulating barrier is nitrogen-doped silicon carbide; First medium layer and second dielectric layer are black diamond.
Annular magnet tunneling junction cell and the method preparing annular magnet tunneling junction cell of application the application.One deck conductive tie layers has been set up between annular magnet tunnel junction and top electrode.In the forming process of top electrode, this layer of conductive tie layers can make to have relatively large reference size in the alignment procedures of top electrode.And even if top electrode occurs slightly to depart from the aligning process, this layer of conductive tie layers also can form conductive path between top electrode and annular magnet tunnel junctions surface, thus prevent the situation occurring open circuit therebetween.
Accompanying drawing explanation
The Figure of description forming a application's part is used to provide further understanding of the present application, and the schematic description and description of the application, for explaining the application, does not form the improper restriction to the application.In the accompanying drawings:
Fig. 1 shows the structural representation of annular magnet tunneling junction cell in a kind of execution mode of the application;
Fig. 2 shows the processing step schematic flow sheet preparing the method for annular magnet tunneling junction cell in a kind of execution mode of the application;
Fig. 3 to Fig. 8 shows the matrix generalized section that each step of a kind of method preparing annular magnet tunneling junction cell in execution mode is formed;
Fig. 3 shows and form bottom electrode on substrate (not shown), forms the generalized section of the matrix after annular magnet tunnel junction on the bottom electrode;
Fig. 4 shows the generalized section forming the matrix after the first insulating barrier of upper surface and annular magnet tunnel junction upper surface flush on the matrix shown in Fig. 3 around the outer wall of annular magnet tunnel junction;
Fig. 5 shows the first insulating barrier forming upper surface and annular magnet tunnel junction upper surface flush on the matrix shown in Fig. 3 around the outer wall of annular magnet tunnel junction, and on the Part I of the first insulating barrier, form the generalized section of the matrix after the first medium layer of upper surface and annular magnet tunnel junction upper surface flush;
Fig. 5-1 shows the upper surface along bottom electrode on the matrix shown in Fig. 3, and the outer surface of annular magnet tunnel junction forms the first preparation insulating barrier, and on the first preparation insulating barrier, form the generalized section of the matrix after the first preparation dielectric layer;
Fig. 6 shows the protective dielectric layer forming upper surface and annular magnet tunnel junction upper surface flush on the matrix shown in Fig. 3 around the outer wall of annular magnet tunnel junction, protective dielectric layer is formed the first insulating barrier of upper surface and annular magnet tunnel junction upper surface flush, and on the Part I of the first insulating barrier, forms the generalized section of the matrix after the first medium layer of upper surface and annular magnet tunnel junction upper surface flush;
Fig. 6-1 shows the upper surface along bottom electrode on the matrix shown in Fig. 3, and the outer surface of annular magnet tunnel junction forms protective medium preparation layers, the upper surface of protective medium preparation layers forms the first preparation insulating barrier, and on the first preparation insulating barrier, forms the generalized section of the matrix after the first preparation dielectric layer;
Fig. 7 shows to be formed on the matrix shown in Fig. 6 and covers annular magnet tunnel junctions surface, protective dielectric layer upper surface and the first insulating barrier upper surface continuously, and the outward flange of the Part II of edge line and the first insulating barrier is positioned at the generalized section of the matrix after the conductive tie layers of same curved surface;
Fig. 7-1 show to be formed on the matrix shown in Fig. 6 cover continuously annular magnet tunnel junctions surface, protective dielectric layer upper surface, the first insulating barrier upper surface and first medium layer upper surface conduction connect the generalized section of the matrix after preparation layers;
Fig. 8 shows to be formed on the matrix shown in Fig. 7 has the second insulating barrier of groove structure, and on the upper surface of the second insulating barrier, form upper surface flush, the generalized section of matrix after the second dielectric layer with the groove structure corresponding with the groove structure on the second insulating barrier;
Fig. 8-1 shows and form the second preparation insulating barrier along on first medium layer upper surface and conductive tie layers upper surface on the matrix shown in Fig. 7, and on the second preparation insulating barrier upper surface, form the generalized section of the matrix after the second preparation dielectric layer;
Fig. 8-2 shows planarization second preparation dielectric layer on the matrix shown in Fig. 8-1, forms the generalized section of the matrix after the second transition medium layer;
Fig. 9 shows the generalized section of the matrix to form annular magnet tunneling junction cell top electrode in the groove structure shown in Fig. 8 after.
Embodiment
It should be noted that, when not conflicting, the embodiment in the application and the feature in embodiment can combine mutually.Below with reference to the accompanying drawings and describe the application in detail in conjunction with the embodiments.
It should be noted that used term is only to describe embodiment here, and be not intended to the illustrative embodiments of restricted root according to the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative is also intended to comprise plural form, in addition, it is to be further understood that, when use belongs to " comprising " and/or " comprising " in this manual, it indicates existing characteristics, step, operation, device, assembly and/or their combination.
For convenience of description, here can usage space relative terms, as " ... on ", " in ... top ", " at ... upper surface ", " above " etc., be used for the spatial relation described as a device shown in the figure or feature and other devices or feature.Should be understood that, space relative terms is intended to comprise the different azimuth in use or operation except the described in the drawings orientation of device.Such as, " in other devices or structure below " or " under other devices or structure " will be positioned as after if the device in accompanying drawing is squeezed, being then described as the device of " above other devices or structure " or " on other devices or structure ".Thus, exemplary term " in ... top " can comprise " in ... top " and " in ... below " two kinds of orientation.This device also can other different modes location (90-degree rotation or be in other orientation), and relatively describe space used here and make respective explanations.
Introduce as background technology part, undersized due to annular magnet tunnel junction, easily occur alignment issues when annular magnet tunnel junctions forms top electrode.In order to address this problem, the application applicant provides a kind of annular magnet tunneling junction cell, as shown in Figure 1, comprise bottom electrode 100, top electrode 300 and the annular magnet tunnel junction 200 between bottom electrode 100 and top electrode 300 wherein, also comprise the conductive tie layers 310 be arranged between top electrode 300 and annular magnet tunnel junction 200.
Each structure sheaf of annular magnet tunnel junction 200 is loop configuration, and the size of annular is less.When forming top electrode above undersized loop configuration like this, probably occur being difficult to alignment issues, the top electrode 300 in unit is departed from, thus affects the conductivity between top electrode 300 and annular magnet tunnel junction 200 upper surface.In the above-mentioned annular magnet tunneling junction cell that the application provides, between annular magnet tunnel junction 200 and top electrode 300, set up one deck conductive tie layers 310.In the forming process of top electrode 300, this layer of conductive tie layers 310 can make to have relatively large reference size in the alignment procedures of top electrode 300.And even if top electrode 300 occurs slightly to depart from the aligning process, this layer of conductive tie layers 310 also can form conductive path between top electrode 300 and annular magnet tunnel junction 200 upper surface, thus prevent the situation occurring open circuit therebetween.
In the above-mentioned annular magnet tunneling junction cell of the application, bottom electrode 100, annular magnet tunnel junction 200 (comprising magnetic layer 210, tunnel barrier layer 220 and upper magnetosphere 230), top electrode 300 and the conductive tie layers between top electrode 300 and annular magnet tunnel junction 200 310 are the agent structure of magnetic tunneling junction cell.In addition, be in the object of isolation magnetic tunneling junction cell, can also be positioned at above bottom electrode 100, around the insulating barrier that annular magnet tunnel junction 200, conductive tie layers 310 and top electrode 300 are arranged, for the ease of making, this insulating barrier can be included between bottom electrode 100 and conductive tie layers 310 around the first insulating barrier 150 that the outer wall of annular magnet tunnel junction 200 is arranged, and above the first insulating barrier 150, the second insulating barrier 180 that the outer wall around conductive tie layers 310 and top electrode 300 is arranged.More preferably, for the ease of forming the upper surface flushed in preparation process, can also comprise in above-mentioned annular magnet tunneling junction cell, be located between the first insulating barrier 150 and the second insulating barrier 180 and first medium layer 160 is set, and be positioned at above the second insulating barrier 180 around the second dielectric layer 190 that top electrode 300 is arranged.In addition, for the consideration protecting annular MTJ 200 further, the protective dielectric layer 150 of the periphery being wrapped in annular magnet tunnel junction 200 can also be formed, and be filled in the intermediate protective layer 110 of annular magnet tunnel junction 200 inside.This intermediate protective layer 110 can adopt same material to be formed with protective dielectric layer 150.
Because conductive tie layers 310 is solid constructions, as long as it covers on the upper surface of annular magnet tunnel junction 200, certain connection annular MTJ 200 and the effect of top electrode 300 just can be played.One preferred embodiment in, the upper surface of annular magnet tunnel junction 200 is positioned within the region that conductive tie layers 310 covers, and the lower surface of top electrode 300 is positioned within the region that conductive tie layers 310 covers.Its essence is the outer ring size being set to the size of conductive tie layers 310 to exceed annular magnet tunnel junction 200, conductive tie layers 310 is covered completely and exceeds the upper surface of annular magnet tunnel junction 200.The conductive tie layers 310 of such larger area is set at the upper surface of annular magnet tunnel junction 200, between the top electrode 300 that can prevent the problem because being difficult to aim at from occurring further and annular magnet tunnel junction 200, the problem of poorly conductive, ensures the serviceability of annular magnet tunneling junction cell further.And conductive tie layers 310 size and annular magnet tunnel junction 200 upper surface size, relation between top electrode 300 size can adjust arbitrarily.Preferably, be difficult to alignment issues for solution and avoid the consideration between leakage current, the distance between the external margin of annular magnet tunnel junction 200 and conductive tie layers 310 external margin is
distance between the external margin of top electrode 300 and conductive tie layers 310 external margin is
" external margin and the distance between conductive tie layers 310 external margin of annular magnet tunnel junction 200 " herein refers to: in the plane that the upper surface of annular magnet tunnel junction 200 contacts with the lower surface of conductive tie layers 310, make the ray that is end points with the upper surface circle centre position of annular magnet tunnel junction 200, this line is crossing with the outer shroud of annular magnet tunnel junction 200, there is intersection point 1, and it is crossing with the edge line of conductive tie layers 310, there is intersection point 2, distance between intersection point 1 and intersection point 2 i.e. " distance between the external margin of annular magnet tunnel junction 200 and conductive tie layers 310 external margin ".In like manner, " external margin and the distance between conductive tie layers 310 external margin of top electrode 300 " refers to: in the plane that the lower surface of top electrode 300 contacts with the upper surface of conductive tie layers 310, the center making the lower surface of one or more electrode 300 is the ray of end points, this line intersects respectively at the edge line of the lower surface of top electrode 300, there is intersection point 3, crossing with the edge line of the upper surface of conductive tie layers 310 again, there is intersection point 4, in the same manner as distance between intersection point 3 with intersection point 4 i.e. " external margin and the distance between conductive tie layers 310 external margin of top electrode 300 ", the thickness of conductive tie layers 310 also can adjust according to the overall dimensions of device.Such as, the thickness of conductive tie layers 310 is 1/12 ~ 1/10 of top electrode 300 thickness, and the thickness of preferred conductive tie layers 310 is
In the above-mentioned annular magnet tunneling junction cell of the application, as long as the material of conductive tie layers 310 can conduct electricity.One preferred embodiment in, the material of conductive tie layers 310 is metal nitride, and preferable alloy nitride is TaN.The conductance of TaN is higher, and has higher adhesiveness with the upper surface of the annular magnet tunnel junction 200 of routine, can improve the connective stability of conductive tie layers 310.
Present invention also provides a kind of method preparing annular magnet tunneling junction cell, as shown in Figure 2, it comprises the following steps: provide the substrate being formed with bottom electrode 300, and forms annular magnet tunnel junction 200 on bottom electrode 100; Annular magnet tunnel junction 200 is formed the conductive tie layers 310 covering annular MTJ 200 upper surface; And top electrode 300 is formed on conductive tie layers 310.By forming the conductive tie layers 310 covering annular MTJ 200 on annular magnet tunnel junction 200, the alignment issues be difficult in later stage top electrode 300 forming process can be improved, make top electrode 300 keep higher conductivity by conductive tie layers 310 and annular magnet tunnel junction 200.
Illustrative embodiments according to the application will be described in more detail below.But these illustrative embodiments can be implemented by multiple different form, and should not be interpreted as being only limited to execution mode set forth herein.Should be understood that, there is provided these execution modes be in order to make the application open thorough and complete, and the design of these illustrative embodiments is fully conveyed to those of ordinary skill in the art, in the accompanying drawings, for the sake of clarity, expand the thickness in layer and region, and use the device that identical Reference numeral represents identical, thus will omit description of them.
Fig. 3 to Fig. 8 shows the method preparing annular magnet tunneling junction cell provided according to a kind of execution mode of the application, the generalized section of the matrix formed after each step.Below in conjunction with Fig. 3 to Fig. 8, further illustrate the preparation method of the annular magnet tunneling junction cell that the application provides.
First, provide the substrate being formed with bottom electrode 100, and form annular magnet tunnel junction 200 on bottom electrode 100, and then form basal body structure as shown in Figure 3.Wherein substrate can be monocrystalline silicon, silicon-on-insulator (SOI) or germanium silicon (SiGe) etc.Exemplarily, in the present embodiment, substrate selects single crystal silicon material to form.Annular magnet tunnel junction 200 comprises magnetic layer 210, tunnel barrier layer 220 and upper magnetosphere 230.In order to improve the switching performance between annular magnet tunnel junction 200 and bottom electrode 100, in annular magnet tunnel junction 200, first tack coat can be set the lower surface of magnetic layer 210.In like manner, in annular magnet tunnel junction 200, the upper surface of magnetosphere 230 arranges the second tack coat, in order to improve the bonding strength between annular magnet tunnel junction 200 and top electrode.The material of the first tack coat and the second tack coat can adjust according to the concrete material of magnetic layer 210, bottom electrode 100, upper magnetosphere 230 and conductive tie layers 310.Such as, the material of the first tack coat includes but not limited to as TaN or TiN, and the material of the second tack coat includes but not limited to as metal Ta.In addition; for protection and the consideration supporting annular MTJ 200; intermediate protective layer 110 is also formed in the inside of annular magnet tunnel junction 200; this intermediate protective layer 110 otherwise affect the effect of annular magnet tunnel junction 200; and can play a supporting role, the step forming this intermediate protective layer 110 adopts common process.The material of this intermediate protective layer 110 can be the dielectric material that those skilled in the art are usual,
After completing the step forming annular magnet tunnel junction 200 on bottom electrode 100, form the first insulating barrier 150 of upper surface and annular magnet tunnel junction 200 upper surface flush around annular magnet tunnel junction 200 outer wall, and then form basal body structure as shown in Figure 4.。The method forming this first insulating barrier 150 adopts those skilled in the art's customary way.
One preferred embodiment in, the step forming the first insulating barrier 150 of upper surface and annular magnet tunnel junction 200 upper surface flush comprises: above bottom electrode 100, forms the first preparation insulating barrier 150 ' of the annular MTJ 200 of covering; With the upper surface of annular magnet tunnel junction 200 for stop-layer, planarization first preparation insulating barrier 150 ', forms the first insulating barrier 150 of upper surface and annular magnet tunnel junction 200 upper surface flush.
In a kind of preferred execution mode, as shown in Figure 5, this first insulating barrier 150 comprises the Part I covering bottom electrode 100 upper surface, and is looped around the Part II on annular magnet tunnel junction 200 sidewall.Now, the step forming the first insulating barrier of upper surface and annular magnet tunnel junction 200 upper surface flush comprises: along the upper surface of bottom electrode 100, and the outer surface of annular magnet tunnel junction 200 forms the first preparation insulating barrier 150 '; And at the upper formation first preparation dielectric layer 160 ' of the first preparation insulating barrier 150 ', and then form basal body structure as shown in fig. 5-1.Then, with the upper surface of annular magnet tunnel junction 200 for stop-layer, planarization first preparation insulating barrier 150 ' and the first preparation dielectric layer 160 ', form the first insulating barrier 150 and the first medium layer 160 of the upper surface flush of upper surface and annular magnet tunnel junction 200; Wherein, first medium layer 160 is formed at the top of the Part I of the first insulating barrier 150, and around the Part II of the first insulating barrier 150, forms basal body structure as shown in Figure 5.Form the first insulating barrier 150, be conducive to annular magnet tunnel junction 200 to be isolated, and then the leakage current that minimizing device produces under electric field action.Meanwhile, for cost-saving consideration, the Part I of the first insulating barrier 150 defines first medium layer 160.As long as the material of this first insulating barrier 150 has good insulating properties, such as, it can be nitrogen-doped silicon carbide.This first medium layer 160 can adopt conventional dielectric material, and preferably, for the ease of the graphical of each layer and etching, simplify operation, above-mentioned first medium layer 160 also can adopt mask material to make, and above-mentioned mask material includes but not limited to black diamond.
In addition, existingly prepare in the method for annular magnet tunneling junction cell, after forming bottom electrode and annular magnet tunnel junction, directly in exposed lower electrode surface He above annular magnet tunnel junction, form insulating barrier, then, form mask layer on the insulating layer, adopt the downward etching mask layer of mode and the insulating barrier of dry etching or wet etching after graphical, form groove structure.And in the above-mentioned method of the application, utilize the means of planarization to remove part higher than annular magnet tunnel junction 200 in the first preparation insulating barrier 150 ' and the first preparation dielectric layer 160 '.Compared to the mode of etching, the mode of planarization is more conducive to the accuracy keeping removal amount, thus is conducive to the damage of avoiding annular magnet tunnel junction 200 to bring because of overetch, improves the serviceability of device further.
One more preferred embodiment in; before the step of formation first insulating barrier 150; outer wall around annular magnet tunnel junction 200 forms the protective dielectric layer 170 of upper surface and annular magnet tunnel junction 200 upper surface flush; protective dielectric layer 170 is formed the first insulating barrier 150 of upper surface and annular magnet tunnel junction 200 upper surface flush; and on the Part I of the first insulating barrier 150, form the first medium layer 160 of upper surface and annular magnet tunnel junction 200 upper surface flush, form basal body structure as shown in Figure 6.The method of the above-mentioned each layer of concrete formation adopts those skilled in the art's customary way.
In a kind of preferred implementation, after the step forming annular magnet tunnel junction 200, also comprise the step being formed and cover the protective medium preparation layers 170 ' of bottom electrode 100 and annular magnet tunnel junction 200 outer surface; Formed in the step of the first preparation insulating barrier 150 ', at the upper formation first preparation insulating barrier 150 ' of protective medium preparation layers 170 ', and then form basal body structure as in Figure 6-1.Then, with the upper surface of annular magnet tunnel junction 200 for stop-layer, planarization first preparation insulating barrier 150 ', protective medium preparation layers 170 ' and optional first preparation dielectric layer 160 ', and then form basal body structure as shown in Figure 6.Wherein, the material of protective dielectric layer 170 includes but not limited to low-k materials, such as LTN (low-temperature nitride), " low-temperature nitride " should refer to depositing temperature lower than the nitride of 350 DEG C.
After completing the step of formation first insulating barrier 150, optional protective dielectric layer 170 and optional first medium layer 160, form conductive tie layers 310.The size of the conductive tie layers 310 formed can adjust according to the outer annular diameter of annular magnet tunnel junction 200.As long as conductive tie layers 310 can cover annular MTJ 200 upper surface and exceed the outer rim of annular magnet tunnel junction 200 upper surface completely.In a preferred embodiment, form the conductive tie layers 310 that edge line overlaps with the outward flange of the Part II of the first insulating barrier 150, form basal body structure as shown in Figure 7.Or formation edge line is positioned at the conductive tie layers 310 inside the outward flange of the Part II of the first insulating barrier.The outward flange of conductive tie layers 310 is controlled the outward flange at the Part II being less than or equal to the first insulating barrier 150, be conducive to making conductive tie layers 310 by insulating material isolation, make final device have good electrical property.
The method forming above-mentioned conductive tie layers 310 adopts those skilled in the art's customary way.One preferred embodiment in; the step forming conductive tie layers 310 comprises: form the conduction covering annular magnet tunnel junction 200 upper surface, the first insulating barrier 150 upper surface, optional first medium layer 160 upper surface and optional protective dielectric layer 170 continuously and connect preparation layers 310 ', form the basal body structure as shown in Fig. 7-1.Then connect preparation layers 310 ' according to the position etching conductive of annular magnet tunnel junction 200 upper surface, form the conductive tie layers 310 that diameter is greater than the outer annular diameter of annular magnet tunnel junction 200, form basal body structure as shown in Figure 7.According to the size of annular magnet tunnel junction 200, can adjust the size of conductive tie layers 310.For solving the consideration being difficult to the problem of aiming at, the diameter of conductive tie layers 310 is 1.3 ~ 1.5 times of annular magnet tunnel junction 200 outer annular diameter.
After the making step completing conductive tie layers 310, conductive tie layers 310 forms top electrode 300.Concrete top electrode manufacture method can adopt those skilled in the art's customary way.One preferred embodiment in, formed above the first insulating barrier 150 and have the second insulating barrier 180 of groove structure 300 ', groove structure 300 ' is formed at the top of conductive tie layers 310; Top electrode 300 is formed in groove structure 300 '.
Form the step with the second insulating barrier 180 of groove structure to comprise: form the second preparation insulating barrier 180 ' at the upper surface of conductive tie layers 310, the first exposed insulating barrier 150, optional first medium layer 160 and optional protective dielectric layer 170; On position corresponding to conductive tie layers 310 in the second preparation insulating barrier 180 ', etching forms the second insulating barrier 180 after forming groove structure 300 '.More preferably, formed in the step of the second insulating barrier 180, before etching forms the step of groove structure 300 ', also comprise the step that planarization second preparation insulating barrier 180 ' forms the second transition insulating barrier, and on position corresponding to conductive tie layers 310 in the second transition insulating barrier, etching forms groove structure 300 ', forms the second insulating barrier 180.With above-mentioned first insulating barrier 150, as long as the material insulating material of the second insulating barrier 180.Such as, can be the nitrogen-doped silicon carbide the same with the first insulating barrier 150 material.Formed in the process of groove structure 300 ', the position directly according to annular magnet tunnel junction etches the second transition insulating barrier after the second preparation insulating barrier 180 ' or planarization.
More preferably, formed in the step of the second insulating barrier 180, also comprise before etching forms the step of groove structure 300 ': form the second preparation dielectric layer 190 at the upper surface of the second preparation insulating barrier 180 ' ", form the basal body structure as shown in Fig. 8-1.Then, planarization second preparation dielectric layer 190 ", form the second transition medium layer 190 ' of upper surface flush, form the basal body structure as shown in Fig. 8-2.Complete planarization second preparation dielectric layer 190 " form the step of the second transition medium layer 190 ' after; corresponding to the position of conductive tie layers 310; etch the second transition medium layer 190 ' and the second preparation insulating barrier 180 ' successively downwards; form the second insulating barrier 180, second dielectric layer 190 and groove structure 300 ', and then form basal body structure as shown in Figure 8.Similarly, the material of second dielectric layer 190 can adopt arbitrary dielectric material, more preferably, for the consideration simplifying operation, mask material can be adopted to prepare above-mentioned second dielectric layer 190.Mask material also can be the black diamond that same first medium layer 160 material is the same.
After completing the step making groove structure 300 ', in groove structure 300 ', form top electrode 300, form basal body structure as shown in Figure 9.The method forming top electrode 300 adopts those skilled in the art's customary way.One preferred embodiment in, form the step of top electrode 300 and comprise: in groove structure 300 ', form the copper seed layer covering groove inner wall; Plated metal copper in the groove structure 300 ' forming copper seed layer, forms top electrode 300, and then forms basal body structure as shown in Figure 9.Material using metallic copper as top electrode 300, makes top electrode have electric performance stablity, advantage that conductivity is high.
The beneficial effect of the application is further illustrated below with reference to embodiment 1 to 3 and comparative example 1:
Embodiment 1
Monocrystalline substrate is provided, substrate is formed metallic copper bottom electrode;
Form annular magnet tunnel junction on the bottom electrode, this comprises from the bottom to top: the first tack coat TiN layer, magnetic tunnel portion, the second tack coat Ta layer, and annular magnet tunnel junction center-filled has LTN medium, and the annular diameters of annular magnet tunnel junction is
outer annular diameter is
The first insulating barrier nitrogen-doped silicon carbide layer of upper surface and annular magnet tunnel junction upper surface flush is formed around above-mentioned annular magnet tunnel junction;
On the surface of the first insulating barrier and annular magnet tunnel junction form the conductive tie layers TaN layer covering annular MTJ upper surface on the surface, its diameter is
On the surface of the first exposed insulating barrier and conductive tie layers form the second insulating barrier nitrogen-doped silicon carbide layer on the surface, and on the second surface of insulating layer, form the mask layer black diamond layer that flushes of surface; The position etching mask layer of corresponding annular magnet tunnel junction and the second insulating barrier, forming diameter is
groove structure;
Form copper seed layer in above-mentioned groove structure after, plated metal copper forms top electrode, thus forms annular magnet tunneling junction cell.
Embodiment 2
Monocrystalline substrate is provided, substrate is formed metallic copper bottom electrode;
Form annular magnet tunnel junction on the bottom electrode, this comprises from the bottom to top: the first tack coat TiN layer, magnetic tunnel portion, the second tack coat Ta layer, and annular magnet tunnel junction center-filled has LTN medium, and the annular diameters of annular magnet tunnel junction is
outer annular diameter is
Surface and annular magnet tunnel junctions surface form protective medium preparation layers LTN layer on the bottom electrode, form the first preparation insulating barrier nitrogen-doped silicon carbide layer at protective medium preparation layers upper surface, form the first preparation dielectric layer black diamond layer at the first preparation insulating barrier upper surface; With annular magnet tunnel junctions surface for stop-layer, planarization first preparation dielectric layer, the first preparation insulating barrier and protective medium preparation layers, the first medium layer forming the protective dielectric layer around annular magnet tunnel junction outer wall, the first insulating barrier around protective dielectric layer surface and be positioned at above the first insulating barrier Part I;
On the surface of the first insulating barrier and annular magnet tunnel junction formed on the surface and cover annular MTJ upper surface, and edge line and the first insulating barrier outer edge line are positioned at the conductive tie layers TaN layer of same curved surface, and its diameter is
On the surface of exposed first medium layer and conductive tie layers form the second insulating barrier nitrogen-doped silicon carbide layer on the surface, and on the second surface of insulating layer, form the second dielectric layer black diamond layer that flushes of surface; The position etching mask layer of corresponding annular magnet tunnel junction and the second insulating barrier, forming diameter is
groove structure;
Form copper seed layer in above-mentioned groove structure after, plated metal copper forms top electrode, thus forms annular magnet tunneling junction cell.
Embodiment 3
Monocrystalline substrate is provided, substrate is formed metallic copper bottom electrode;
Form annular magnet tunnel junction on the bottom electrode, this comprises from the bottom to top: the first tack coat TiN layer, magnetic tunnel portion, the second tack coat Ta layer, and annular magnet tunnel junction center-filled has LTN medium, and the annular diameters of annular magnet tunnel junction is
outer annular diameter is
Surface and annular magnet tunnel junctions surface form protective medium preparation layers LTN layer on the bottom electrode, form the first preparation insulating barrier nitrogen-doped silicon carbide layer at protective medium preparation layers upper surface, form the first preparation dielectric layer black diamond layer at the first preparation insulating barrier upper surface; With annular magnet tunnel junctions surface for stop-layer, planarization first preparation dielectric layer, the first preparation insulating barrier and protective medium preparation layers, the first medium layer forming the protective dielectric layer around annular magnet tunnel junction outer wall, the first insulating barrier around protective dielectric layer surface and be positioned at above the first insulating barrier Part I;
On the surface of the first insulating barrier and annular magnet tunnel junction formed on the surface and cover annular MTJ upper surface, and edge line and the first insulating barrier outer edge line are positioned at the conductive tie layers TaN layer of same curved surface, and its diameter is
On the surface of exposed first medium layer and conductive tie layers form the second insulating barrier nitrogen-doped silicon carbide layer on the surface, and on the second surface of insulating layer, form the second dielectric layer black diamond layer that flushes of surface; The position etching mask layer of corresponding annular magnet tunnel junction and the second insulating barrier, forming diameter is
groove structure;
Form copper seed layer in above-mentioned groove structure after, plated metal copper forms top electrode, thus forms annular magnet tunneling junction cell.
Comparative example 1
Monocrystalline substrate is provided, substrate is formed metallic copper bottom electrode;
Form annular magnet tunnel junction on the bottom electrode, this comprises from the bottom to top: the first tack coat TiN layer, magnetic tunnel portion, the second tack coat Ta layer, and annular magnet tunnel junction center-filled has LTN medium, and the annular diameters of annular magnet tunnel junction is
outer annular diameter is
Surface forms dielectric layer LTN layer with annular magnet tunnel junctions surface on the bottom electrode, and dielectric layer is formed insulating barrier nitrogen-doped silicon carbide layer, forms mask layer black diamond layer on the insulating layer; After planarization mask layer, according to the downward etching mask layer in the position of annular magnet tunnel junction, insulating barrier and dielectric layer, forming diameter is
groove structure;
Form copper seed layer in above-mentioned groove structure after, plated metal copper forms top electrode, thus forms annular magnet tunneling junction cell.
The annular magnet tunneling junction cell of preparation in above-described embodiment 1 ~ 3 and comparative example 1 is tested, to characterize the conductivity between its top electrode and annular magnet tunnel junction;
Method of testing: carry out reliability test to the annular magnet tunneling junction cell in above-described embodiment and comparative example, percent of pass result is as shown in table 1:
Table 1
| Percent of pass (%) | |
| Embodiment 1 | 95 |
| Embodiment 2 | 98 |
| Embodiment 3 | 99 |
| Comparative example 1 | 85 |
From above data with describing, can find out, the application's the above embodiments achieve following technique effect: by setting up one deck conductive tie layers between annular magnet tunnel junction and top electrode, can when prepared by the top electrode of annular magnet tunneling junction cell, solve top electrode and be difficult to alignment issues, make, between top electrode and annular magnet tunnel junction, there is good conductivity.Thus improve the serviceability of annular magnet tunneling junction cell.
The foregoing is only the preferred embodiment of the application, be not limited to the application, for a person skilled in the art, the application can have various modifications and variations.Within all spirit in the application and principle, any amendment done, equivalent replacement, improvement etc., within the protection range that all should be included in the application.
Claims (18)
1. an annular magnet tunneling junction cell, comprise bottom electrode, top electrode and the annular magnet tunnel junction between described bottom electrode and described top electrode, it is characterized in that, described annular magnet tunneling junction cell also comprises the conductive tie layers be arranged between described top electrode and described annular magnet tunnel junction.
2. annular magnet tunneling junction cell according to claim 1, it is characterized in that, the upper surface of described annular magnet tunnel junction is positioned within the region that described conductive tie layers covers, and the lower surface of described top electrode is positioned within the region that described conductive tie layers covers.
3. annular magnet tunneling junction cell according to claim 2, is characterized in that, the distance between the external margin of described annular magnet tunnel junction and described conductive tie layers external margin is
distance between the external margin of described top electrode and described conductive tie layers external margin is
4. annular magnet tunneling junction cell according to claim 1, is characterized in that, the thickness of described conductive tie layers is 1/12 ~ 1/10 of described top electrode thickness.
5. annular magnet tunneling junction cell according to any one of claim 1 to 4, is characterized in that, the material of described conductive tie layers is metal nitride.
6. prepare a method for annular magnet tunneling junction cell, it is characterized in that, comprise the following steps:
The substrate being formed with bottom electrode is provided, and on described bottom electrode, forms described annular magnet tunnel junction;
The conductive tie layers covering described annular magnet tunnel junction is formed at described annular magnet tunnel junctions; And
Described conductive tie layers forms top electrode.
7. preparation method according to claim 6, is characterized in that, the method preparing described annular magnet tunneling junction cell comprises the following steps:
Described bottom electrode is formed described annular magnet tunnel junction;
Above described bottom electrode, form the first insulating barrier of upper surface and described annular magnet tunnel junction upper surface flush around described annular magnet tunnel junction outer wall;
The described conductive tie layers covering described annular magnet tunnel junctions surface is formed at described annular magnet tunnel junctions;
Above described first insulating barrier, form second insulating barrier with groove structure, described groove structure is formed at the top of described conductive tie layers;
Described top electrode is formed in described groove structure.
8. preparation method according to claim 7, is characterized in that, the step forming described first insulating barrier of upper surface and described annular magnet tunnel junction upper surface flush comprises:
Above described bottom electrode, form the first preparation insulating barrier covering described annular magnet tunnel junction;
With the upper surface of described annular magnet tunnel junction for stop-layer, the first preparation insulating barrier described in planarization, forms the first insulating barrier of described upper surface and described annular magnet tunnel junction upper surface flush.
9. preparation method according to claim 7, it is characterized in that, described first insulating barrier comprises the Part I covering described bottom electrode upper surface, and the Part II be looped around on described annular magnet tunnel junction sidewall, the step forming described first insulating barrier of upper surface and described annular magnet tunnel junction upper surface flush comprises:
Along the upper surface of described bottom electrode, and the outer surface of described annular magnet tunnel junction forms the first preparation insulating barrier;
Described first preparation insulating barrier forms the first preparation dielectric layer;
With the upper surface of described annular magnet tunnel junction for stop-layer, the first preparation insulating barrier described in planarization and described first preparation dielectric layer, form described first insulating barrier and the first medium layer of the upper surface flush of upper surface and described annular magnet tunnel junction;
Wherein, described first medium layer is formed at the top of the Part I of described first insulating barrier, and around the Part II of described first insulating barrier.
10. the preparation method according to any one of claim 7 to 9, is characterized in that,
After the step forming described annular magnet tunnel junction, also comprise the step being formed and cover the protective medium preparation layers of described bottom electrode and described annular magnet tunnel junction outer surface,
Formed in the step of described first preparation insulating barrier, described protective medium preparation layers is formed described first preparation insulating barrier;
In the step forming described first insulating barrier; with the upper surface of described annular magnet tunnel junction for stop-layer; first preparation insulating barrier, described protective medium preparation layers and optionally described first preparation dielectric layer described in planarization, form described first insulating barrier, protective dielectric layer and optional described first medium layer.
11. preparation methods according to claim 10, is characterized in that, the step forming described conductive tie layers comprises:
Form the conduction connection preparation layers covering described annular magnet tunnel junctions surface, described first insulating barrier upper surface, optional described first medium layer upper surface and optional described protective dielectric layer continuously;
The position described conduction of etching according to described annular magnet tunnel junctions surface connects preparation layers, forms the described conductive tie layers that diameter is greater than the outer annular diameter of described annular magnet tunnel junction.
12. preparation methods according to claim 11, it is characterized in that, described first insulating barrier comprises the Part I covering described bottom electrode upper surface, and the Part II be looped around on described annular magnet tunnel junction outer wall, formed in the step of described conductive tie layers, etch described conduction and connect preparation layers, form edge line to overlap with the outward flange of the Part II of described first insulating barrier, or edge line be positioned at the Part II of described first insulating barrier outward flange inside described conductive tie layers.
13. methods of attachment according to claim 6, is characterized in that, form the step with described second insulating barrier of described groove structure and comprise:
The second preparation insulating barrier is formed at the upper surface of described conductive tie layers, exposed described first insulating barrier, optional described first medium layer and optional described protective dielectric layer;
On position corresponding to described conductive tie layers in described second preparation insulating barrier, etching forms described second insulating barrier after forming described groove structure.
14. methods of attachment according to claim 13, it is characterized in that, formed in the step of described second insulating barrier, before etching forms the step of described groove structure, also comprise the second preparation insulating barrier described in planarization and form the step of the second transition insulating barrier, and on position corresponding to described conductive tie layers in described second transition insulating barrier, etching forms groove structure, forms described second insulating barrier.
15. methods of attachment according to claim 14, is characterized in that, are formed in the step of described second insulating barrier,
Also comprise before etching forms the step of described groove structure: form the second preparation dielectric layer at the upper surface of described second preparation insulating barrier; Second preparation dielectric layer described in planarization, forms the second transition medium layer of upper surface flush;
Formed in etching in the step of described groove structure, corresponding to the position of described conductive tie layers, etch described second transition medium layer and described second preparation insulating barrier downwards successively, form described groove structure.
16. methods of attachment according to claim 6, is characterized in that, the step forming described top electrode comprises:
The copper seed layer covering groove inner wall is formed in described groove structure;
Plated metal copper in the described groove structure forming described copper seed layer, forms described top electrode.
17. methods of attachment according to any one of claim 6 to 16, it is characterized in that, the diameter of described conductive tie layers is 1.3 ~ 1.5 times of described annular magnet tunnel junction outer annular diameter.
18. methods of attachment according to any one of claim 6 to 16, it is characterized in that, the material of described protective dielectric layer is low-temperature nitride; The material of described first insulating barrier and described second insulating barrier is nitrogen-doped silicon carbide; Described first medium layer and described second dielectric layer are black diamond.
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