CN105140193A - Power module welding structure of copper-clad ceramic heat radiation substrate - Google Patents
Power module welding structure of copper-clad ceramic heat radiation substrate Download PDFInfo
- Publication number
- CN105140193A CN105140193A CN201510219976.2A CN201510219976A CN105140193A CN 105140193 A CN105140193 A CN 105140193A CN 201510219976 A CN201510219976 A CN 201510219976A CN 105140193 A CN105140193 A CN 105140193A
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- CN
- China
- Prior art keywords
- copper
- ceramic heat
- dissipating substrate
- copper ceramic
- heat radiation
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3511—Warping
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention relates to a power module welding structure of a copper-clad ceramic heat radiation substrate. The power module welding structure comprises the copper-clad ceramic heat radiation substrate which is assembled with an insulation casing and is then mounted on a heat radiator through a fastening member, wherein the copper-clad ceramic heat radiation substrate is welded with multiple chips, before welding the chips, the middle of the copper-clad ceramic heat radiation substrate generates outwardly-convex bending deformation at a certain radian downwards, the thermal expansion coefficient of a copper layer is greater than the thermal expansion coefficient of ceramic sintered with the copper layer and is greater than the thermal expansion coefficient of the chips, after the copper-clad ceramic heat radiation substrate is welded with the chips, a heat radiation face of the copper-clad ceramic heat radiation substrate contacting with the heat radiator is a flat plane, and the chips are welded on a welding face on the copper-clad ceramic heat radiation substrate through welding materials, after the power module is welded, the copper-clad ceramic heat radiation substrate excellently contacts with the heat radiator, and stability and service life of the power module are effectively improved.
Description
Technical field
What the present invention relates to is a kind ofly be provided with the power model Welding Structure that copper ceramic heat-dissipating substrate is covered in deformation-compensated welding, and belongs to design and the encapsulation technology field of semi-conductor power module.
Background technology
Semiconductor is covered copper pottery power model and is chip, covers copper ceramic heat-dissipating substrate (DirectBondedCopper, DBC) and connect by soldering and be assembled into together.Semiconductor covers copper pottery power model operationally, and chip can produce heat, and most of caloric requirement is distributed by the transmission of solder → DBC → thermal grease conduction → radiator.
Semiconductor covers copper pottery power model and first applies one deck heat-conducting silicone grease at the radiating surface covering copper ceramic heat-dissipating substrate in a pre-installation, then installs on a heat sink; The thickness of heat-conducting silicone grease is generally between 0.08mm ~ 0.15mm, and the thermal conductivity ratio radiating surface of heat-conducting silicone grease is that the copper ceramic heat-dissipating substrate conductive coefficient that covers made of copper is large, so require that covering copper ceramic heat-dissipating substrate inherently has good contact with between radiator, realize effective transmission of heat, thus guaranteed output module there is good electric property.
And generally, chip is that the material using thermal coefficient of expansion different manufactures from covering copper ceramic heat-dissipating substrate, in the process cooled after high-temperature soldering, because coefficient of thermal expansion is different, covers copper ceramic heat-dissipating substrate stressed, can occur bending and deformation.
Summary of the invention
The object of the invention is to the deficiency overcoming prior art existence, and provide a kind of structure simple, reliably easy to assembly, semiconductor can be made to cover copper pottery power model after welding, it covers copper ceramic heat-dissipating substrate and radiator has good contact, and the heat produced when making power model work effectively can conduct, distribute, and effectively can improve the stability of power model and the power model Welding Structure covering copper ceramic heat-dissipating substrate in useful life.
The object of the invention is to have come by following technical solution, a kind of power model Welding Structure covering copper ceramic heat-dissipating substrate, it comprises one piece with after insulation crust assembles, and be arranged on by securing member a radiator covers copper ceramic heat-dissipating substrate, this covers the chip being welded with some above copper ceramic heat-dissipating substrate, the described copper ceramic heat-dissipating substrate that covers in the state before integral with some chips welding is: cover the evagination flexural deformation downwards in certain radian in the middle of copper ceramic heat-dissipating substrate, and the thermal coefficient of expansion of described layers of copper is greater than the ceramic thermal coefficient of expansion being sintered in one with it and the thermal coefficient of expansion being greater than chip, and make the described copper ceramic heat-dissipating substrate that covers after integral with chips welding, covering the radiating surface contacted with radiator below copper ceramic heat-dissipating substrate is burnishing surface.
Described chip is welded in the solder side covered above copper ceramic heat-dissipating substrate by solder; The described radiating surface covered below copper ceramic heat-dissipating substrate applies certain thickness thermal grease conduction, and is installed on a heat sink by securing member.
The described copper ceramic heat-dissipating substrate that covers mainly is made up of ceramic layer two sides sintering red copper, and red copper surface is coated with at least one metal level in Cu, Ni, Au, Sn, and guarantee fund's metal surface has good welded activity and non-oxidizability, and good outward appearance.
The present invention mainly utilizes to be had the deformation-compensated copper ceramic heat-dissipating substrate that covers and covers copper pottery power model for semiconductor, namely the radiating surface covering copper ceramic heat-dissipating substrate is the curved surface with certain radian before welding, after covering the solder side welding chip of copper ceramic heat-dissipating substrate, the radiating surface covering copper ceramic heat-dissipating substrate has good contact with assembling radiator.
It is simple that the present invention has structure, reliably easy to assembly, semiconductor can be made to cover copper pottery power model after welding, it covers copper ceramic heat-dissipating substrate and radiator has good contact, and the heat produced when making power model work effectively can conduct, distribute, and effectively can improve the features such as the stability of power model and useful life.
Accompanying drawing explanation
The copper ceramic heat-dissipating substrate that covers that Fig. 1 is chip of the present invention, solder side is curved surface welds front sectional drawing.
The copper ceramic heat-dissipating substrate that covers that Fig. 2 is chip of the present invention, solder side is curved surface welds rear sectional drawing.
Fig. 3 is the sectional drawing that power model of the present invention installs on a heat sink.
Embodiment
Below in conjunction with accompanying drawing, the present invention will be described in detail: shown in Fig. 1-3, a kind of power model Welding Structure covering copper ceramic heat-dissipating substrate of the present invention, it comprises one piece with after insulation crust 4 assembles, and be arranged on by securing member a radiator 7 covers copper ceramic heat-dissipating substrate 3, this covers the chip 1 that copper ceramic heat-dissipating substrate 3 is welded with some above, covering copper ceramic heat-dissipating substrate 3 described in it is characterized in that in the state before integrally welded with some chips 1 is: cover the evagination flexural deformation downwards in certain radian in the middle of copper ceramic heat-dissipating substrate 3, and the thermal coefficient of expansion of described layers of copper is greater than the ceramic thermal coefficient of expansion being sintered in one with it and the thermal coefficient of expansion being greater than chip, and make the described copper ceramic heat-dissipating substrate 3 that covers after integrally welded with chip 1, covering the radiating surface 331 contacted with radiator 7 below copper ceramic heat-dissipating substrate 3 is burnishing surface.
Described chip 1 is welded in the solder side 311 covered above copper ceramic heat-dissipating substrate 3 by solder 2; The described radiating surface 331 covered below copper ceramic heat-dissipating substrate 3 applies certain thickness thermal grease conduction 5, and is arranged on radiator 7 by securing member 6.
The described copper ceramic heat-dissipating substrate 3 that covers mainly is made up of ceramic layer 32 two sides sintering red copper, and red copper surface is coated with at least one metal level in Cu, Ni, Au, Sn.
Semiconductor covers copper pottery power model operationally can effective distribute heat, and covering copper ceramic heat-dissipating substrate radiating surface must have good contact with radiator.And welding in functional part process covering on copper ceramic heat-dissipating substrate due to power model, both thermal coefficient of expansions are different, and heat-radiating substrate radiating surface can produce Inward deflection.Make power model in use, cover between copper ceramic heat-dissipating substrate and radiator and produce cavity, can not efficiently radiates heat.
So there is the deformation-compensated copper ceramic heat-dissipating substrate that covers substitute with a kind of and general cover copper ceramic heat-dissipating substrate, this deformation-compensated can slightly larger than the deflection after heat-radiating substrate welding, the contact that after power model is installed, radiating surface still can be good with radiator; This deformation-compensated be that the radiating surface covering copper ceramic heat-dissipating substrate outwards has certain evagination flexural deformation.
Embodiment: shown in Fig. 1, the radiating surface 331 covering copper ceramic heat-dissipating substrate 3 outwards has certain evagination flexural deformation, and chip 1 is welded in the solder side 311 covering copper ceramic substrate heat-radiating substrate 3 by solder 2.
Shown in Fig. 2, chip 1 is welded on and covers on copper ceramic heat-dissipating substrate 3, because both thermal coefficient of expansions are different, chip 1 thermal coefficient of expansion < pottery 32 thermal coefficient of expansion < copper 31 thermal coefficient of expansions, so in cooling procedure after welding, cover copper ceramic heat-dissipating substrate solder side 331 tension stress, solder side 311 is protruding, i.e. radiating surface 331 Inward deflection, but still old certain outwardly convex or smooth.
Shown in Fig. 3, semiconductor covers covering on copper ceramic heat-dissipating substrate radiating surface 331 of power model of copper pottery and applies certain thickness thermal grease conduction 5, use securing member 6 to be arranged on radiator 7, have certain projection or smooth radiating surface 331 to contact with radiator 7 better.
Claims (3)
1. one kind covers the power model Welding Structure of copper ceramic heat-dissipating substrate, it comprises one piece with after insulation crust (4) assembles, and be arranged on by securing member a radiator (7) covers copper ceramic heat-dissipating substrate (3), this covers the chip (1) that copper ceramic heat-dissipating substrate (3) is welded with some above, covering copper ceramic heat-dissipating substrate (3) described in it is characterized in that in the state before integrally welded with some chips (1) is: cover the evagination flexural deformation downwards in certain radian in the middle of copper ceramic heat-dissipating substrate (3), and the thermal coefficient of expansion of described layers of copper is greater than the ceramic thermal coefficient of expansion being sintered in one with it and the thermal coefficient of expansion being greater than chip, and make the described copper ceramic heat-dissipating substrate (3) that covers after integrally welded with chip (1), covering the radiating surface (331) contacted with radiator (7) below copper ceramic heat-dissipating substrate (3) is burnishing surface.
2. the power model Welding Structure covering copper ceramic heat-dissipating substrate according to claim 1, is characterized in that described chip (1) is welded in the solder side (311) covered above copper ceramic heat-dissipating substrate (3) by solder (2); The described radiating surface (331) the certain thickness thermal grease conduction of upper coating (5) covered below copper ceramic heat-dissipating substrate (3), and be arranged on radiator (7) by securing member (6).
3. the power model Welding Structure covering copper ceramic heat-dissipating substrate according to claim 1 and 2, it is characterized in that the described copper ceramic heat-dissipating substrate (3) that covers mainly is made up of ceramic layer (32) two sides sintering red copper, red copper surface is coated with at least one metal level in Cu, Ni, Au, Sn.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510219976.2A CN105140193A (en) | 2015-05-04 | 2015-05-04 | Power module welding structure of copper-clad ceramic heat radiation substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510219976.2A CN105140193A (en) | 2015-05-04 | 2015-05-04 | Power module welding structure of copper-clad ceramic heat radiation substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105140193A true CN105140193A (en) | 2015-12-09 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510219976.2A Pending CN105140193A (en) | 2015-05-04 | 2015-05-04 | Power module welding structure of copper-clad ceramic heat radiation substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105140193A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109075159A (en) * | 2016-04-21 | 2018-12-21 | 三菱电机株式会社 | Semiconductor device and its manufacturing method |
| CN109155295A (en) * | 2016-03-30 | 2019-01-04 | 西门子股份公司 | Adhesive for power electronics component to be connect with radiator and the component being made from it |
| CN110429070A (en) * | 2019-07-03 | 2019-11-08 | 惠州市乾野微纳电子有限公司 | Can two-side radiation power component |
| CN112349663A (en) * | 2020-10-16 | 2021-02-09 | 上海大郡动力控制技术有限公司 | Double-layer heat dissipation structure for power semiconductor module |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102969283A (en) * | 2011-09-01 | 2013-03-13 | 英飞凌科技股份有限公司 | Elastic mounting of power modules |
| CN103779316A (en) * | 2014-01-25 | 2014-05-07 | 嘉兴斯达半导体股份有限公司 | Power module soldering structure |
| CN103794571A (en) * | 2014-01-25 | 2014-05-14 | 嘉兴斯达半导体股份有限公司 | Novel metal-ceramic insulating substrate for power semiconductor |
| CN203746836U (en) * | 2014-01-25 | 2014-07-30 | 嘉兴斯达半导体股份有限公司 | Power module welding structure |
| CN204045563U (en) * | 2014-01-25 | 2014-12-24 | 嘉兴斯达半导体股份有限公司 | Power semiconductor novel metal-ceramic insulation substrate |
-
2015
- 2015-05-04 CN CN201510219976.2A patent/CN105140193A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102969283A (en) * | 2011-09-01 | 2013-03-13 | 英飞凌科技股份有限公司 | Elastic mounting of power modules |
| CN103779316A (en) * | 2014-01-25 | 2014-05-07 | 嘉兴斯达半导体股份有限公司 | Power module soldering structure |
| CN103794571A (en) * | 2014-01-25 | 2014-05-14 | 嘉兴斯达半导体股份有限公司 | Novel metal-ceramic insulating substrate for power semiconductor |
| CN203746836U (en) * | 2014-01-25 | 2014-07-30 | 嘉兴斯达半导体股份有限公司 | Power module welding structure |
| CN204045563U (en) * | 2014-01-25 | 2014-12-24 | 嘉兴斯达半导体股份有限公司 | Power semiconductor novel metal-ceramic insulation substrate |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109155295A (en) * | 2016-03-30 | 2019-01-04 | 西门子股份公司 | Adhesive for power electronics component to be connect with radiator and the component being made from it |
| CN109075159A (en) * | 2016-04-21 | 2018-12-21 | 三菱电机株式会社 | Semiconductor device and its manufacturing method |
| CN110429070A (en) * | 2019-07-03 | 2019-11-08 | 惠州市乾野微纳电子有限公司 | Can two-side radiation power component |
| CN110429070B (en) * | 2019-07-03 | 2024-05-28 | 无锡市乾野微纳科技有限公司 | Power element capable of radiating heat from two sides |
| CN112349663A (en) * | 2020-10-16 | 2021-02-09 | 上海大郡动力控制技术有限公司 | Double-layer heat dissipation structure for power semiconductor module |
| CN112349663B (en) * | 2020-10-16 | 2022-09-16 | 正海集团有限公司 | Double-layer heat dissipation structure for power semiconductor module |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20151209 |
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| RJ01 | Rejection of invention patent application after publication |