CN105137676B - A kind of pixel unit, array base palte and vertical alignment liquid crystal display device - Google Patents

A kind of pixel unit, array base palte and vertical alignment liquid crystal display device Download PDF

Info

Publication number
CN105137676B
CN105137676B CN201510648818.9A CN201510648818A CN105137676B CN 105137676 B CN105137676 B CN 105137676B CN 201510648818 A CN201510648818 A CN 201510648818A CN 105137676 B CN105137676 B CN 105137676B
Authority
CN
China
Prior art keywords
electrode
pixel electrode
pixel
film transistor
tft
Prior art date
Application number
CN201510648818.9A
Other languages
Chinese (zh)
Other versions
CN105137676A (en
Inventor
林家强
Original Assignee
京东方科技集团股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京东方科技集团股份有限公司 filed Critical 京东方科技集团股份有限公司
Priority to CN201510648818.9A priority Critical patent/CN105137676B/en
Publication of CN105137676A publication Critical patent/CN105137676A/en
Application granted granted Critical
Publication of CN105137676B publication Critical patent/CN105137676B/en

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/134309Electrodes characterised by their geometrical arrangement
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device

Abstract

The present embodiments relate to display technology field, more particularly to a kind of pixel unit, array base palte and vertical alignment liquid crystal display device, can reduce carefully the secretly quantity of line while the deflection efficiency of liquid crystal is improved.A kind of pixel unit provided in an embodiment of the present invention, including:First pixel electrode, first pixel electrode include the strip electrode group at least two directions being connected with each other, and each have slit between the electrode in the strip electrode group;The second pixel electrode below first pixel electrode, second pixel electrode are at least overlapped in the slit region of first pixel electrode;First film transistor, the second thin film transistor (TFT) and the 3rd thin film transistor (TFT).Preparation for pixel unit, array base palte and vertical alignment liquid crystal display device.

Description

A kind of pixel unit, array base palte and vertical alignment liquid crystal display device

Technical field

The present invention relates to display technology field, more particularly to a kind of pixel unit, array base palte and vertical orientation type liquid crystal Display device.

Background technology

Polymer stabilizing vertical orientation (Polymer Stabilization Vertical Alignment, abbreviation PSVA) Technology is one layer of polymeric layer that can make VA Formation of liquid crystals pre-tilt angles of generation on alignment film.Wherein, the formation of polymeric layer Process is as shown in Fig. 1 a to Fig. 1 c.As shown in Figure 1a, not before upper and lower base plate applies voltage, the director of common liquid crystals molecule It is perpendicular to upper and lower base plate arrangement.Before applying voltage, first a certain proportion of high-purity is mixed in common VA liquid crystal Reactive liquid crystals (English is:Reactive Mesogen), reactive liquid crystals have the liquid crystal core of common liquid crystals molecule, end With one or more acrylic bases, (English is:Acrylate Group) etc can reactive functional group base.Can reactive functional group base Macromolecule network is aggregated into after ultraviolet light (Ultra Violet, abbreviation UV) irradiation, can reach and be permanently fixed.

As shown in Figure 1 b, before the irradiation of UV light, first apply voltage on upper and lower base plate, liquid crystal molecule is produced one in advance Inclination angle, wherein, corresponding to the liquid crystal molecule in the different farmlands in pixel unit, incline direction is respectively different, and (Fig. 1 b are not shown not With the incline direction of liquid crystal molecule in farmland);When because apply applied voltage, and cause liquid crystal produce inclination angle after, Ke Yijin Row UV irradiates, and due to being mixed with reactive liquid crystals in common liquid crystals, and after reactive liquid crystals are subject to UV to irradiate, can aggregate into Macromolecule network, reaches and is permanently fixed, therefore can make it that the liquid crystal molecule close to upper and lower base plate forms fixed pre-tilt angle.Such as Shown in Fig. 1 c, after UV irradiates, after removing applied voltage.Since the liquid crystal molecule close to upper and lower base plate is subject to macromolecule The influence of network, forms fixed pre-tilt angle, and the liquid crystal molecule in intermediate layer is not affected by the influence of macromolecule network molecule, then extensive Multiple is the arrangement mode perpendicular to upper and lower base plate.

The plane that Fig. 2 illustrates pixel electrode in multi-domain vertical alignment type liquid crystal display device in the prior art is shown It is intended to.As shown in Fig. 2, in order to realize that vertical orientation multidomain is shown, it will usually which by pixel electrode figure, (English is:pixel Pattern) making the pixel electrode with slit, (English is:Pixel slit) so that liquid crystal is in the pixel electrode and color film It under the action of public electrode on substrate, can be tilted to multiple directions, form liquid crystal multidomain orientation.Due to the electricity of pixel electrode There are gap between the striped of pole, the electric field strength for causing to be formed between the gap between electrode striped and public electrode can be weaker than electricity The electric field strength formed between pole striped and public electrode, so the electric field pair formed between electrode striped and public electrode Liquid crystal molecule, which acts power, can be more than the electric field formed between the gap between electrode striped and public electrode to liquid crystal point The active force that son produces, causes the deflection efficiency of liquid crystal than relatively low, so that dark fringe can be formed at interstitial site.

In order to solve above-mentioned dark stripes problem, reduce the electrode of pixel electrode in industry using pixel electrode manufacture craft Gap between striped, can reduce the width of dark fringe.The above method is used, although the width of dark fringe can be reduced, It is that still cannot reduce dark fringe.

The content of the invention

The embodiment of the present invention provides a kind of pixel unit, array base palte and vertical alignment liquid crystal display device, Ke Yi While improving liquid crystal deflection rate, the quantity of dark fringe is reduced.

The embodiment of the present invention provides a kind of pixel unit, including:

First pixel electrode, first pixel electrode include the strip electrode group at least two directions being connected with each other, There is slit between electrode in each strip electrode group;

The second pixel electrode below first pixel electrode, second pixel electrode are at least overlapped in described The slit region of first pixel electrode;

First film transistor is used for the first pixel electrode transmission data wire signal;

Second thin film transistor (TFT) is used to transmit the data line signal to second pixel electrode;

3rd thin film transistor (TFT) is used for the data line signal of first pixel electrode or second pixel electrode It is transferred to voltage grading electrode.

It is preferred that the grid of the first film transistor, source electrode, drain electrode respectively with the first scan line, data cable, described First pixel electrode electrically connects;

The grid of second thin film transistor (TFT), source electrode, drain electrode respectively with first scan line, the data cable, institute The second pixel electrode is stated to electrically connect, wherein, the data cable is used for transmission data line signal;

The grid of 3rd thin film transistor (TFT), source electrode, drain electrode respectively with the second scan line, first pixel electrode or The second pixel electrode, voltage grading electrode electrically connect described in person.

It is preferred that first pixel electrode is in " rice " word structure, including:Two the first bar shapeds electricity of Cheng " Ha " words arrangement Pole group, two the second bar shaped electrode groups arranged in " eight " word, and be connected with each strip electrode group, farmland in a cross-shaped mode Between electrode.

It is preferred that electrode in two the first strip electrode groups is respectively between the transverse electrode between farmland in electrode Angle is between 35~55 °;Transverse electrode between electrode and farmland in the second bar shaped electrode group in left side in electrode it Between angle between 35 °~55 °;Laterally electricity between electrode and farmland in the second bar shaped electrode group on right side in electrode Angle between pole is between 35 °~65 °.

It is preferred that the spacing of the slit is between 3~20 microns.

It is preferred that second pixel electrode includes the strip electrode group at least two directions being connected with each other, Mei Gesuo Stating between the electrode in strip electrode group has slit.

It is preferred that second pixel electrode is plane-shape electrode.

It is preferred that the source electrode of the first film transistor is connected with the data cable, and second thin film transistor (TFT) Source electrode be connected with the source electrode of the first film transistor.

It is preferred that the source electrode of the 3rd thin film transistor (TFT) is the part in the drain electrode of second thin film transistor (TFT).

It is preferred that the voltage grading electrode forms the first storage capacitance with the first pixel electrode overlapping region;

The voltage grading electrode forms the second storage capacitance with the second pixel electrode overlapping region.

The embodiment of the present invention also provides a kind of array base palte, including:

The first scan line, the second scan line arranged in pairs;

The data cable arranged in a crossed manner with first scan line and second scan line;

The pixel unit being connected with first scan line, second scan line and the data cable, the pixel unit For the pixel unit in above-described embodiment.

The embodiment of the present invention also provides a kind of vertical alignment liquid crystal display device, including:

Array base palte in above-described embodiment;

Color membrane substrates, the color membrane substrates are oppositely arranged with the array base palte, and are provided with public affairs on the color membrane substrates Common electrode;

Liquid crystal layer, is arranged between the array base palte and the color membrane substrates.

In the embodiment of the present invention, there is provided the first pixel electrode include be connected with each other at least two directions strip electrode Group, each has slit between the electrode in the strip electrode group;The second pixel below first pixel electrode Electrode, second pixel electrode are at least overlapped in the slit region of first pixel electrode;First film transistor For to the first pixel electrode transmission data wire signal;Second thin film transistor (TFT) is used to transmit to second pixel electrode The data line signal;3rd thin film transistor (TFT) is used for the data cable of first pixel electrode or second pixel electrode Signal transmission is to voltage grading electrode;In the dot structure, the second pixel electrode is overlapped between the strip electrode of the first pixel electrode Septal area domain, when the electric field formed between the strip electrode and the public electrode that is arranged on color membrane substrates of the first pixel electrode is more than Strip electrode interval region and when being arranged on the electric field formed between the public electrode on color membrane substrates, due to the second pixel electrode The strip electrode interval region of the first pixel electrode is overlapped in, so that the second pixel electrode can be with being arranged on color membrane substrates Also electric field is formed between public electrode.Liquid crystal i.e. positioned at the first pixel electrode strip electrode interval region is subject to the second pixel electric Pole and the active force for being arranged on the electric field formed between the public electrode on color membrane substrates, can produce enough deflection, so that While liquid crystal deflection rate is improved, reduce the dark fringe number produced positioned at the first pixel electrode strip electrode interval region Amount.

Brief description of the drawings

In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing There is attached drawing needed in technology description to be briefly described, it should be apparent that, drawings in the following description are only this Some embodiments of invention, for those of ordinary skill in the art, without creative efforts, can be with Other attached drawings are obtained according to these attached drawings.

Fig. 1 a are arrangement schematic diagram of the common liquid crystals molecule in upper and lower base plate in the prior art;

Fig. 1 b is in the prior art, after upper and lower base plate applies voltage, arrangement schematic diagram of the liquid crystal molecule in upper and lower base plate;

Fig. 1 c is in the prior art, after UV irradiations, arrangement schematic diagram of the liquid crystal molecule in upper and lower base plate;

Fig. 2 is the floor map of multi-domain vertical alignment type pixel unit in the prior art;

Fig. 3 is a kind of pixel cell structure schematic diagram provided in an embodiment of the present invention;

Fig. 4 a are a kind of distribution situation schematic diagram of the first pixel electrode provided in an embodiment of the present invention in pixel unit;

Fig. 4 b are another distribution situation signal of the first pixel electrode provided in an embodiment of the present invention in pixel unit Figure;

Fig. 5 a are the pixel cell structure schematic diagram that the first pixel electrode provided in an embodiment of the present invention is " rice " word structure;

Fig. 5 b are a kind of pixel unit including the first pixel electrode and the second pixel electrode provided in an embodiment of the present invention Structure diagram;

Fig. 5 c are the vertical cut-away schematic view of the first pixel electrode provided in an embodiment of the present invention and the second pixel electrode;

Fig. 5 d are another pixel list for including the first pixel electrode and the second pixel electrode provided in an embodiment of the present invention Meta structure schematic diagram;

Fig. 5 e show for the vertical section of another first pixel electrode provided in an embodiment of the present invention and the second pixel electrode It is intended to;

Fig. 6 is a kind of array base-plate structure schematic diagram provided in an embodiment of the present invention;

Fig. 7 is a kind of liquid crystal display device structure schematic diagram provided in an embodiment of the present invention.

Embodiment

The preferred embodiment of the present invention is illustrated below in conjunction with Figure of description, it will be appreciated that described herein Preferred embodiment is merely to illustrate and explain the present invention, and is not intended to limit the present invention, and in the case where there is no conflict, this hair The feature in embodiment and embodiment in bright can be mutually combined.

The embodiment of the present invention provides a kind of pixel unit, which is generally arranged at the array base palte of display device On, specifically as shown in figure 3, thin including the first pixel electrode 301, the second pixel electrode 302, first film transistor 303, second 304 and the 3rd thin film transistor (TFT) 305 of film transistor;Wherein, the first pixel electrode 301 includes at least two directions being connected with each other Strip electrode group, and there is slit m between the electrode in each strip electrode group;Second pixel electrode 302 is located at first The lower section of pixel electrode 301, and the 302 some or all of bar shaped electricity for being overlapped in the first pixel electrode 301 of the second pixel electrode The slit m regions of pole group.

As shown in figure 3, the pixel unit further includes the first scan line 306, data cable 307, the second scan line 308 and partial pressure Electrode 309.Specifically, first film transistor 303 is used for the 301 transmission data wire signal of the first pixel electrode, and second Thin film transistor (TFT) 304 is used to transmit the data line signal to second pixel electrode 302, and the 3rd thin film transistor (TFT) 305 is used In the data line signal of first pixel electrode 301 is transferred to voltage grading electrode 309.

It should be noted that in above-described embodiment, the 3rd thin film transistor (TFT) 305 is additionally operable to second pixel electrode 302 data line signal is transferred to voltage grading electrode 309.In embodiments of the present invention, to the 3rd thin film transistor (TFT) to voltage grading electrode The data line signal for whether transmitting the first pixel electrode or the data line signal for transmitting the second pixel electrode do not do specific limit It is fixed.

As described in Figure 3, the grid of first film transistor 303 is electrically connected with the first scan line 306, first film transistor 303 source electrode is electrically connected with data cable 307, and the drain electrode of first film transistor 303 is electrically connected with the first pixel electrode 301;The The grid of two thin film transistor (TFT)s 304 is electrically connected with the first scan line 306, source electrode and the data cable 307 of the second thin film transistor (TFT) 304 Electrically connect, the drain electrode of the second thin film transistor (TFT) is electrically connected with the second pixel electrode 302;The grid of 3rd thin film transistor (TFT) 305 with Second scan line 308 is electrically connected, and the source electrode of the 3rd thin film transistor (TFT) 305 is electrically connected with the second pixel electrode 302, and the 3rd film is brilliant The drain electrode of body pipe 305 is electrically connected with voltage grading electrode 309.

It should be noted that when the grid of first film transistor 303 is electrically connected with the first scan line 306, the first film The source electrode of transistor 303 is electrically connected with data cable 307, the drain electrode of first film transistor 303 and 301 Electricity Federation of the first pixel electrode When connecing, data cable 307 is 301 transmission data wire signal of the first pixel electrode;When the grid and first of the second thin film transistor (TFT) 304 Scan line 306 electrically connects, and source electrode and the data cable 307 of the second thin film transistor (TFT) 304 electrically connect, the drain electrode of the second thin film transistor (TFT) When being electrically connected with the second pixel electrode 302, data cable 307 is the second pixel electrode transmission data wire signal.

In the above-described embodiments, it is necessary to which explanation, the source electrode of the 3rd thin film transistor (TFT) 305 can also be with the first pixel electricity Pole 301 electrically connects, and is not electrically connected with the second pixel electrode 302.

In practical applications, electrically connect that (English is:Electrically coupled to), including directly or indirectly Connection, and including inductively etc;It is electrically connected that (English is:Electrically connected to), it is often referred to directly Connection, is not included inductively etc.

In the embodiment of the present invention, pair specific limit is not done with the pixel electrode that the source electrode of the 3rd thin film transistor (TFT) electrically connects It is fixed, meanwhile, the connection mode of pair pixel electrode being connected with the source electrode of the 3rd thin film transistor (TFT) does not do specific display.

Here, in order to meet the electrode in the first pixel electrode electrode group and the public electrode that is arranged on color membrane substrates it Between the electric field energy that is formed equal active force is provided for the liquid crystal of liquid crystal layer, it is preferable that can be by same bar shaped electrode group Slit m between electrode is arranged to same widths, the width of each electrode in same bar shaped electrode group can also be arranged to phase Same width;Slit m between electrode in same bar shaped electrode group can also be arranged to same widths, while by same The width of multiple electrodes in shape electrode group is arranged to identical width.In the embodiment of the present invention, in same bar shaped electrode group Electrode between slit width and the width of the electrode in same bar shaped electrode group do not do specific restriction.

In embodiments of the present invention, strip electrode group includes multiple electrodes being parallel to each other, and has gap between electrode, I.e. a strip electrode group has one group of electrode of same direction arrangement.

In embodiments of the present invention, explanation is introduced for convenience, and electrode above in pixel electrode is known as first Pixel electrode, underlying electrode is known as the second pixel electrode in pixel electrode.It is mutual included by first pixel electrode The strip electrode group at least two directions of connection, wherein, distribution situation of the strip electrode group in pixel unit is not limited to Fig. 3 Shown distribution situation, in embodiments of the present invention, as long as the first pixel electrode meets the following conditions:

(1) at least there is the strip electrode group of both direction;

(2) it is connected with each other between above-mentioned strip electrode group;

(3) electrode in each strip electrode group has slit.

Fig. 4 a illustrate a kind of distribution situation of first pixel electrode in pixel unit.As shown in fig. 4 a, first Pixel electrode 401a includes the strip electrode group of the interconnection with both direction, and between the electrode in strip electrode group With slit.First pixel electrode 401a is located at the top of pixel electrode, and the second pixel electrode 402a is located under pixel electrode Square (not shown), wherein, it is connected with each other between strip electrode group, in embodiments of the present invention, between strip electrode group Tie point can be located at the top of strip electrode group, can be located at the lower section of strip electrode group, can also be located at strip electrode group Centre, the embodiment of the present invention do not do specific restriction to the tie point between strip electrode group.

Further, if the first pixel electrode 401a in Fig. 4 a is rotated in pixel unit, can obtain The first picture shown in the first pixel electrode 402a and Fig. 4 a shown in the first pixel electrode 402a, Fig. 4 b as shown in Figure 4 b The structure of plain electrode 401a is identical, has the strip electrode group of the interconnection of both direction, and the electricity in strip electrode group There is slit between pole, and positioned at the top of pixel electrode;The second pixel electrode 402b (not shown)s in Fig. 4 b are located at The lower section of pixel electrode.And be also connected with each other between the first pixel electrode 402a in Fig. 4 b, and in connection method and Fig. 4 a Connection method it is consistent, details are not described herein.

Further, if the first pixel electrode 401a in Fig. 4 a is continued to rotate in pixel electrode, can obtain with The first pixel electrode of the first pixel electrode 401a directions conversely in Fig. 4 a;If by the first pixel electrode 401a in Fig. 4 a after Continue and rotated in pixel electrode, the first pixel electricity opposite with the first pixel electrode 402a directions in Fig. 4 b can also be obtained Pole.In embodiments of the present invention, to the first pixel electrode with both direction and interconnection, and in strip electrode group The direction of the electrode group with slit does not do specific restriction between electrode.

In embodiments of the present invention, the first pixel electrode includes the strip electrode group at least two directions being connected with each other, There is slit between electrode in each strip electrode group;Second pixel electrode is located at below the first pixel electrode, and the second picture Plain electrode is at least overlapped in the slit region of the first pixel electrode;The grid of first film transistor, source electrode, drain electrode difference Electrically connected with the first scan line, data cable and the first pixel electrode;The grid of second thin film transistor (TFT), source electrode, drain electrode respectively with First scan line, data cable, the second pixel electrode electrically connect;The grid of 3rd film, source electrode, drain electrode are scanned with second respectively Line, the first pixel electrode or the second pixel electrode, voltage grading electrode electrically connect.When first film transistor and the second film crystal When pipe is opened, data cable can charge to the first pixel electrode and the second pixel electrode at the same time, wait the first pixel electrode and the second picture After the completion of plain electrode charge, the first scan line is in low-voltage state, closes first film transistor and the second thin film transistor (TFT);The Two scan lines are in high-voltage state, can be opened the 3rd thin film transistor (TFT), due to the grid, source electrode, leakage of the 3rd thin film transistor (TFT) Pole is electrically connected with the second scan line, the second pixel electrode or the first pixel electrode, voltage grading electrode respectively.Such as with it is the 3rd thin What the source electrode in film transistor was electrically connected is the second pixel electrode, when the 3rd thin film transistor (TFT) is opened, in the second pixel electrode The electric charge of storage can charge to voltage grading electrode, or voltage grading electrode can charge to the second pixel electrode, so the second pixel electrode The electric charge of memory storage can be different from the electric charge of the first pixel internal storage storage.

Formed when between the electrode in the first pixel electrode strip electrode group and the public electrode being arranged on color membrane substrates Electric field when, the slit between electrode in the first pixel electrode strip electrode group also can be arranged on it is public on color membrane substrates Electric field is formed between electrode.Since the first pixel electrode memory contains electric charge, and the electricity in the first pixel electrode strip electrode group Slit areas between pole does not store electric charge, so, between electrode and it is arranged on shape between the public electrode on color membrane substrates Into electric field can be more than slit areas and be arranged on the electric field formed between the public electrode on color membrane substrates.I.e. slit areas with The active force that the electric field formed between the public electrode on color membrane substrates provides for the liquid crystal of liquid crystal layer is arranged on, electrode can be less than The active force provided with being arranged on the electric field formed between the public electrode on color membrane substrates for the liquid crystal of liquid crystal layer.It is meanwhile narrow The deflection efficiency for stitching the liquid crystal in the corresponding liquid crystal layer in region also can be than relatively low.

In embodiments of the present invention, the second pixel electrode is located at the lower section of the first pixel electrode, and at least part or The slit region of the first pixel electrode is totally overlapped at, since the electric charge of the first pixel electrode memory storage is different from the second picture The electric charge of plain electrode memory storage, i.e., the strip electrode of the first pixel electrode and be arranged on shape between the public electrode on color membrane substrates Into electric field can also be different from the second pixel electrode and being arranged on the electric field formed between the public electrode on color membrane substrates, due to At least some or all of slit areas for being overlapped in the first pixel electrode of second pixel electrode, so, the first pixel electrode Slit areas and be arranged on the electric field formed between the public electrode on color membrane substrates it is weaker when, the second pixel electrode can be with Electric field is formed with being arranged between the public electrode on color membrane substrates, and the intensity of the electric field can be more than the first pixel electrode Slit areas and it is arranged on the electric field strength formed between the public electrode on color membrane substrates.Therefore, the second pixel electrode is with setting Put the electric field formed between the public electrode on color membrane substrates and be more than slit areas for the active force that the liquid crystal of liquid crystal layer provides The active force provided with being arranged on the electric field formed between the public electrode on color membrane substrates for the liquid crystal of liquid crystal layer.Using this hair The method that bright embodiment is provided, the strip electrode that while liquid crystal deflection rate is improved, can reduce by the first pixel electrode are narrow Stitch the quantity that region forms dark fringe.

Based on identical inventive concept, illustrate provided in an embodiment of the present invention one below in conjunction with attached drawing 5a, Fig. 5 b and Fig. 5 c Kind pixel unit.Fig. 5 a it is exemplary show the first pixel electrode structure schematic diagram provided in an embodiment of the present invention;Fig. 5 b are Structure diagram provided in an embodiment of the present invention including the first pixel electrode and the second pixel electrode, Fig. 5 c embodiment of the present invention In the vertical cut-away schematic view of the first pixel electrode and the second pixel electrode.

The embodiment of the present invention only does further restriction to concrete shape of first pixel electrode in pixel unit, on picture The other structures of plain unit may be referred to above-described embodiment.

In embodiments of the present invention, distribution of first pixel electrode in pixel unit is referring to Fig. 5 a, the first pixel electrode 501a (not shown)s are in " rice " word structure in pixel unit, including Cheng " Ha " two the first strip electrode groups of word arrangement 501a-1, in " eight " word arrange two the second bar shaped electrode group 501a-2, and be connected with each strip electrode group, in " ten " Electrode 501a-3 between the farmland of shape.

It should be noted that the first strip electrode group 501a-1 that the first pixel electrode includes and the second bar shaped electrode group Electrode shape in 501a-2 can be identical, can also part it is identical, in the embodiment of the present invention, to the first strip electrode group Whether the shape of 501a-1 and the second bar shaped electrode group 501a-2 are identical, do not do specific restriction.

Specifically, the transverse electrode between the electrode in the left side of the first strip electrode group 501a-1 and farmland in electrode 501a-3 it Between angle be a, wherein, angle a is between 35~55 °;Between the electrode on the right side of the first strip electrode group 501a-1 and farmland The angle between transverse electrode in electrode 501a-3 is b, wherein, angle b is between 35~55 °;Second bar shaped electrode group The angle between transverse electrode between the left electrodes of 501a-2 and farmland in electrode 501a-3 is d, wherein, angle d between 35~ Between 55 °;The angle between transverse electrode between the right electrodes of second bar shaped electrode group 501a-2 and farmland in electrode 501a-3 For c, wherein, angle c is between 35~65 °.

In embodiments of the present invention, to the horizontal stroke in electrode 501a-3 between the electrode in the first strip electrode group 501a-1 and farmland Specific restriction is not done to the angle between electrode, to electrode 501a-3 between the electrode in the second bar shaped electrode group 501a-2 and farmland In transverse electrode between angle do not do specific restriction yet.

There is slit, if in the first pixel electrode between electrode in the strip electrode group included due to the first pixel electrode Slit spacing it is smaller, the electrode in strip electrode group in the first pixel electrode with the common electrical that is arranged on color membrane substrates The electric field formed between pole, meeting and be overlapped in or partially overlap the first pixel electrode slit areas the second pixel electrode and set Put and interfere with each other between the electric field formed between the public electrode on color membrane substrates.

In embodiments of the present invention, in order to reduce in the first pixel electrode electrode in strip electrode group and be arranged on color film base The electric field formed between public electrode on plate, the second pixel electricity with being overlapped in or partially overlapping the first pixel slit areas Pole and it is arranged between the electric field formed between the public electrode on color membrane substrates and can interferes with each other, it is preferable that the first pixel electricity The slit spacing between electrode in the strip electrode group of pole is between 3~20 microns.

In embodiments of the present invention, the second pixel electrode is located at the lower section of the first pixel electrode, and the second pixel electrode is extremely Small part is overlapping or is totally overlapped at the slit region of the first pixel.The the second pixel electricity provided in the embodiment of the present invention The shape of pole includes at least following two situations:

In a kind of embodiment, the second pixel electrode can be fabricated to the shape similar with the first pixel electrode, such as, the Two pixel electrodes include the strip electrode group at least two directions being connected with each other, and have between the electrode in each strip electrode group There is slit.Since the second pixel electrode need at least be overlapped in the slit region of the first pixel electrode, the second pixel electricity Electrode in the strip electrode group of pole can be partially or entirely located in the slit region of the first pixel electrode, the second pixel The slit between electrode in the strip electrode group of electrode is also located exactly at below the strip electrode of the first pixel electrode.

As shown in Figure 5 b, the shape of the second pixel electrode 501b has similar shape with the first pixel electrode 501a, by In the first pixel electrode slit width between 3~20 microns, so, in embodiments of the present invention, the first pixel electrode 501a Slit spacing can be less than the second pixel electrode 501b electrode width;Can be wide more than the electrode of the second pixel electrode 501b Degree;The electrode width of the second pixel electrode 501b can also be equal to.

When the slit spacing of the first pixel electrode 501a is more than the electrode width of the second pixel electrode 501b, the second pixel The electrode of electrode 501b can only partially overlap the slit region of the first pixel electrode, i.e., the first pixel electrode 501a's is narrow Seam region has part not shared by the electrode of the second pixel electrode;When the slit spacing of the first pixel electrode 501a During electrode width equal to the second pixel electrode 501b, the electrode of the second pixel electrode 501b can be totally overlapped at the first pixel The slit region of electrode;When the slit of the first pixel electrode 501a is smaller than the electrode width of the second pixel electrode 501b When, the electrode of the second pixel electrode 501b can not only be totally overlapped at the slit region of the first pixel electrode, Er Qiehui There is the base part that subregion can extend to the first pixel electrode.In embodiments of the present invention, to the narrow of the first pixel electrode The size of the electrode width of slit width degree and the second pixel electrode does not do specific restriction.

Fig. 5 c are the diagrammatic cross-section of AA lines in Fig. 5 b, and in figure 5b, AA lines include the first pixel electrode 501a and second Pixel electrode 501b, wherein, there are three electrodes in the first pixel electrode 501a electrode groups, in the second pixel electrode 501b electrode groups There are four electrodes, and the electrode width phase of the width of the slit region of the first pixel electrode 501a and the second pixel electrode Deng.As shown in Figure 5 c, where the slit of the electrode width in the second pixel electrode 501b electrode groups and the first pixel electrode 501a The width in region is equal, i.e. the second pixel electrode 501b is completely overlapped in the slit region of the first pixel electrode 501a, and The electrode of second pixel electrode 501b does not extend to the base part of the first pixel electrode 501a.

In above-described embodiment, what the slit areas of the first pixel electrode was formed with the public electrode being arranged on color membrane substrates Electric field, it is weaker than the electric field that the electrode in the electrode group of the first pixel electrode is formed with the public electrode being arranged on color membrane substrates, Since the second pixel electrode is positioned at the lower section of the first pixel electrode, and the second pixel electrode is least partially overlapped in the first picture The slit region of plain electrode, i.e. slit region are less than electrode institute for the deflecting action power that the liquid crystal in liquid crystal layer provides During the deflecting action power provided in region for the liquid crystal in liquid crystal layer, the electrode in the electrode group of the second pixel electrode is with being arranged on The electric field that public electrode on color membrane substrates is formed, can provide deflection for the liquid crystal in the corresponding liquid crystal layer in slit region Active force.Therefore, when the second pixel electrode is located at below the first pixel electrode, and at least partial pixel electrode is overlapped in first During the slit region of pixel electrode, the deflection efficiency of liquid crystal can be improved, while reduce the number of dark fringe in the prior art Amount.

Another embodiment, can make planar structure by the second pixel electrode.As fig 5d, the second pixel electrode 502b is located at the lower section of the first pixel electrode 502a, since the shape of the second pixel electrode 502b is planar, so the second pixel Electrode 502b can be completely overlapped in the lower section of the first pixel electrode 502a.Fig. 5 e are the diagrammatic cross-section of the BB lines in Fig. 5 d, Since the second pixel electrode 502b is planar structure, in Fig. 5 e, the second pixel electrode 502b is not only completely overlapped in the first picture The lower section of the slit region of plain electrode 502a, and it is completely overlapped in the electrode region of the first pixel electrode 502a Lower section.

When the slit areas between the electrode in the strip electrode group of the first pixel electrode and it is arranged on color membrane substrates The electric field that public electrode is formed, it is weaker than the electric field that the first pixel electrode is formed with the public electrode being arranged on color membrane substrates, and When smaller for the deflecting action power of the liquid crystal offer of liquid crystal layer, the second pixel below the first pixel electrode slit areas The electric field that electrode is formed with the public electrode being arranged on color membrane substrates, can provide enough for the liquid crystal of liquid crystal layer just Deflecting action power.Therefore, when the second pixel electrode is located at below the first pixel electrode, and the second pixel electrode is completely overlapped in the During the slit region of one pixel electrode, the deflection efficiency of liquid crystal can be improved, while reduce dark fringe in the prior art Quantity.

In pixel unit in embodiments of the present invention, first film transistor, the second thin film transistor (TFT) and are further included Three thin film transistor (TFT)s.Here, the grid of first film transistor, source electrode and drain electrode, respectively with the first scan line, data cable and One pixel electrode electrically connects;The grid of second thin film transistor (TFT), source electrode and drain electrode respectively with the first scan line, data cable and second Pixel electrode electrically connects;Preferably, as shown in figure 3, can be by brilliant by the source electrode of first film transistor 303 and the second film The source electrode of body 304 is connected directly, and the source electrode and number that the source electrode of the second thin film transistor (TFT) 304 passes through first film transistor 303 It is connected according to line, it is thus possible to reduce the number of leads in pixel unit, simplifies the manufacture craft of pixel unit.

Optionally, the source electrode of the second thin film transistor (TFT) can also be directly electrically connected with data cable, first film transistor Source electrode is also directly electrically connected with data cable.

On this basis, to the connection side between the source electrode and data cable of the second thin film transistor (TFT) in the embodiment of the present invention Method does not do specific restriction.

In embodiments of the present invention, in order to control the gray scale of display picture, the problem of big viewing angle color whitens is improved.

A kind of embodiment, can change the by adjusting the first pixel electrode and the relative area of the second pixel electrode The size of one pixel electrode and the electric field for the formation being arranged between the public electrode on color membrane substrates, and change the second pixel Electrode and the size for being arranged on the electric field formed between the public electrode on color membrane substrates.

When the second pixel electrode is planar structure, since the shape of the second pixel electrode is fixed, adjusting can be passed through Electrode width in the strip electrode group of first pixel electrode, changes the opposite face between the first pixel electrode and the second pixel electrode Product ratio, by varying the relative area ratio between the first pixel electrode and the second pixel electrode, thus it is possible to vary the first pixel Electrode and the second pixel electrode and it is arranged on the electric field force formed between the public electrode on color membrane substrates;When the second pixel electrode Shape and the first pixel electrode shape version, the electrode width in the strip electrode group of the first pixel electrode can be adjusted, Keep the shape invariance of the second pixel electrode;The electrode width in the strip electrode group of the second pixel electrode can be adjusted, is kept The shape invariance of first pixel electrode;The electrode width in the strip electrode group of the first pixel electrode and can also be adjusted at the same time Electrode width in the strip electrode group of two pixel electrodes;So as to change the opposite face of the first pixel electrode and the second pixel electrode Product ratio, changes the first pixel electrode and the second pixel electrode and is arranged on what is formed between the public electrode on color membrane substrates Electric field force;Further change the deflecting action power of liquid crystal in liquid crystal layer, so as to fulfill the gray scale of control display picture, improve The problem of big viewing angle color whitens.

Another embodiment, since the source electrode of the 3rd thin film transistor (TFT) is one of drain electrode of the second thin film transistor (TFT) Point, i.e., one section in the drain electrode of the second thin film transistor (TFT) shared by the 3rd thin film transistor (TFT), the source as the 3rd thin film transistor (TFT) Pole.And the drain electrode of the 3rd thin film transistor (TFT) is electrically connected with voltage grading electrode, in embodiments of the present invention, since voltage grading electrode is located at picture The fringe region of plain electrode and lower section, you can to determine, voltage grading electrode forms first with the first pixel electrode overlapping region and deposits Storing up electricity is held, and voltage grading electrode forms the second storage capacitance with the second pixel electrode overlapping region.When voltage grading electrode and the first picture , can be by adjusting the phase between the first pixel electrode and voltage grading electrode when the overlapping region of plain electrode forms the first storage capacitance To area, so as to change the quantity of electric charge in the first storage capacitance;When voltage grading electrode and the overlapping region of the second pixel electrode are formed , can be by adjusting the relative area between the second pixel electrode and voltage grading electrode, so as to change second during the second storage capacitance The quantity of electric charge in storage capacitance.

Due to the grid of the 3rd thin film transistor (TFT), source electrode, drain electrode respectively with the second scan line, the first pixel electrode or the Two pixel electrodes, voltage grading electrode are electrically connected.If the source electrode of the 3rd thin film transistor (TFT) and the second pixel electrode are electrically connected, due to second Pixel electrode has been completed to charge to the second pixel electrode when the first scan line is in high pressure conditions.Since voltage grading electrode can be with The first storage capacitance is formed with the first pixel electrode overlapping region, the second storage electricity is formed with the second pixel electrode overlapping region Hold.When the second scan line is in high-voltage state, the 3rd thin film transistor (TFT) can be opened, if the first storage capacitance and the second storage electricity Hold the quantity of electric charge of the capacitance storage after series connection less than the quantity of electric charge in the second pixel electrode, then the second pixel electrode can be to storage electricity Pole charge, wait voltage grading electrode storage capacitance memory storage electric charge and the second pixel electrode in storage electric charge it is equal after, second Pixel electrode can stop the storage capacitance charging to voltage grading electrode.If the electricity after the first storage capacitance and the series connection of the second storage capacitance Hold the quantity of electric charge of storage more than the quantity of electric charge in the second pixel electrode, then the storage electrode of voltage grading electrode can be to the second pixel electrode Charging, wait voltage grading electrode storage capacitance memory storage electric charge and the second pixel electrode in storage electric charge it is equal after, partial pressure electricity The storage capacitance of pole can stop charging to the second pixel electrode.

In embodiments of the present invention, can be by varying the face of overlapping region between voltage grading electrode and the first pixel electrode Product;Or the area by varying overlapping region between voltage grading electrode and the second pixel electrode;Or change voltage grading electrode at the same time And first overlapping region between pixel electrode and the second pixel electrode area.To change the electricity in the storage capacitance of voltage grading electrode The number of lotus amount.Meanwhile after the 3rd thin film transistor (TFT) opening, if the 3rd thin film transistor (TFT) and the first pixel electrode are electrically connected, The number of the quantity of electric charge in the first pixel electrode can be changed;If the 3rd thin film transistor (TFT) and the second pixel electrode are electrically connected, can With change the second pixel electrode in the quantity of electric charge number.So as to realize the gray scale of control display picture, improve big visual angle The problem of color whitens.

In above-described embodiment, the first pixel electrode and the second pixel electrode are transparency electrode, and transparency electrode can use Tin-oxide (Indium Tin Oxide, abbreviation ITO), indium-zinc oxide (Indium Zinc Oxide, abbreviation IZO) and At least one of transparent conductive oxide materials such as aluminium zinc oxide (Aluminum Zinc Oxide, abbreviation AZO).This hair In bright embodiment, specific restriction is not done to the composition material of the first pixel electrode and the second pixel electrode.

As shown in fig. 6, the embodiment of the present invention provides a kind of array base palte, including:The first scan line 601 for arranging in pairs, Second scan line 602;The data cable 603 arranged in a crossed manner with the first scan line 601 and the second scan line 602;With the first scan line 601st, the pixel unit 604 that the second scan line 602 and data cable 603 connect, wherein, which is institute in above-described embodiment The pixel unit stated.

As shown in fig. 7, the embodiment of the present invention also provides a kind of vertical alignment liquid crystal display device, including above-described embodiment The array base palte 701 told about, color membrane substrates 702, the color membrane substrates are oppositely arranged with array base palte, and on the color membrane substrates 702 It is provided with public electrode (not shown);Liquid crystal layer 703, is arranged between array base palte 701 and the color membrane substrates 702.

Wherein, there is public electrode, and public electrode is preferably shaped to planar on color membrane substrates 702.In liquid crystal layer 703 Liquid crystal be electronegativity liquid crystal.

In the embodiment of the present invention, there is provided the first pixel electrode include be connected with each other at least two directions strip electrode Group, each has slit between the electrode in the strip electrode group;The second pixel below first pixel electrode Electrode, second pixel electrode are at least overlapped in the slit region of first pixel electrode;First film transistor For to the first pixel electrode transmission data wire signal;Second thin film transistor (TFT) is used to transmit to second pixel electrode The data line signal;3rd thin film transistor (TFT) is used for the data cable of first pixel electrode or second pixel electrode Signal transmission is to voltage grading electrode;In the dot structure, the second pixel electrode is overlapped between the strip electrode of the first pixel electrode Septal area domain, when the electric field formed between the strip electrode and the public electrode that is arranged on color membrane substrates of the first pixel electrode is more than Strip electrode interval region and when being arranged on the electric field formed between the public electrode on color membrane substrates, due to the second pixel electrode The strip electrode interval region of the first pixel electrode is overlapped in, so that the second pixel electrode can be with being arranged on color membrane substrates Also electric field is formed between public electrode.Liquid crystal i.e. positioned at the first pixel electrode strip electrode interval region is subject to the second pixel electric Pole and the active force for being arranged on the electric field formed between the public electrode on color membrane substrates, can produce enough deflection, so that While liquid crystal deflection rate is improved, reduce the dark fringe number produced positioned at the first pixel electrode strip electrode interval region Amount.

The foregoing is merely the preferred embodiment of the application, is not limited to the application, all essences in the application With within principle, any modification, equivalent replacement, improvement and so on, should be included within the protection domain of the application god.

Although having been described for the preferred embodiment of the application, those skilled in the art once know basic creation Property concept, then can make these embodiments other change and modification.So appended claims be intended to be construed to include it is excellent Select embodiment and fall into all change and modification of the application scope.

Obviously, those skilled in the art can carry out the application essence of the various modification and variations without departing from the application God and scope.In this way, if these modifications and variations of the application belong to the scope of the application claim and its equivalent technologies Within, then the application is also intended to comprising including these modification and variations.

Claims (11)

  1. A kind of 1. pixel unit, it is characterised in that including:
    First pixel electrode, first pixel electrode include the strip electrode group at least two directions being connected with each other, each There is slit between electrode in the strip electrode group;
    The second pixel electrode below first pixel electrode, second pixel electrode are at least overlapped in described first The slit region of pixel electrode;
    First film transistor is used for the first pixel electrode transmission data wire signal;
    Second thin film transistor (TFT) is used to transmit the data line signal to second pixel electrode;
    3rd thin film transistor (TFT) is used to transmit the data line signal of first pixel electrode or second pixel electrode To voltage grading electrode;
    The grid of the first film transistor, source electrode, drain electrode are electric with the first scan line, data cable, first pixel respectively Pole electrically connects;
    The grid of second thin film transistor (TFT), source electrode, drain electrode respectively with first scan line, the data cable, described the Two pixel electrodes electrically connect, wherein, the data cable is used for transmission data line signal;
    The grid of 3rd thin film transistor (TFT), source electrode, drain electrode respectively with the second scan line, first pixel electrode or institute State the second pixel electrode, voltage grading electrode electrically connects.
  2. 2. pixel unit as claimed in claim 1, it is characterised in that first pixel electrode is in " rice " word structure, including: In " Ha " word arrange two the first strip electrode groups, in " eight " word arrange two the second bar shaped electrode groups, and with each bar Electrode between the connection of shape electrode group, in a cross-shaped mode farmland.
  3. 3. pixel unit as claimed in claim 2, it is characterised in that the electrode difference in two the first strip electrode groups The angle between transverse electrode between farmland in electrode is between 35~55 °;In the second bar shaped electrode group in left side The angle between transverse electrode between electrode and farmland in electrode is between 35 °~55 °;The second bar shaped electrode group positioned at right side In electrode and farmland between angle between transverse electrode in electrode between 35 °~65 °.
  4. 4. pixel unit as claimed in claim 1, it is characterised in that the spacing of the slit is between 3~20 microns.
  5. 5. pixel unit as claimed in claim 1, it is characterised in that second pixel electrode includes being connected with each other at least The strip electrode group of both direction, each has slit between the electrode in the strip electrode group.
  6. 6. pixel unit as claimed in claim 1, it is characterised in that second pixel electrode is plane-shape electrode.
  7. 7. pixel unit as claimed in claim 1, it is characterised in that the source electrode of the first film transistor and the data Line connects, and the source electrode of second thin film transistor (TFT) is connected with the source electrode of the first film transistor, and second film is brilliant The source electrode of body pipe is connected by the source electrode of the first film transistor with data cable.
  8. 8. pixel unit as claimed in claim 1, it is characterised in that the source electrode of the 3rd thin film transistor (TFT) is described second A part in the drain electrode of thin film transistor (TFT).
  9. 9. pixel unit as claimed in claim 1, it is characterised in that the voltage grading electrode is overlapping with first pixel electrode Region forms the first storage capacitance;
    The voltage grading electrode forms the second storage capacitance with the second pixel electrode overlapping region.
  10. A kind of 10. array base palte, it is characterised in that including:
    The first scan line, the second scan line arranged in pairs;
    The data cable arranged in a crossed manner with first scan line and second scan line;
    The pixel unit being connected with first scan line, second scan line and the data cable, the pixel unit are Pixel unit described in claim 1~9 Arbitrary Term.
  11. A kind of 11. vertical alignment liquid crystal display device, it is characterised in that including:
    Array base palte described in claim 10;
    Color membrane substrates, the color membrane substrates are oppositely arranged with the array base palte, and are provided with common electrical on the color membrane substrates Pole;
    Liquid crystal layer, is arranged between the array base palte and the color membrane substrates.
CN201510648818.9A 2015-10-09 2015-10-09 A kind of pixel unit, array base palte and vertical alignment liquid crystal display device CN105137676B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510648818.9A CN105137676B (en) 2015-10-09 2015-10-09 A kind of pixel unit, array base palte and vertical alignment liquid crystal display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510648818.9A CN105137676B (en) 2015-10-09 2015-10-09 A kind of pixel unit, array base palte and vertical alignment liquid crystal display device

Publications (2)

Publication Number Publication Date
CN105137676A CN105137676A (en) 2015-12-09
CN105137676B true CN105137676B (en) 2018-04-20

Family

ID=54723072

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510648818.9A CN105137676B (en) 2015-10-09 2015-10-09 A kind of pixel unit, array base palte and vertical alignment liquid crystal display device

Country Status (1)

Country Link
CN (1) CN105137676B (en)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101295298B1 (en) * 2006-07-28 2013-08-08 삼성디스플레이 주식회사 Liquid crystal display
KR101377007B1 (en) * 2007-08-14 2014-03-26 삼성디스플레이 주식회사 Thin film transistor array substrate and liquid crystal display panel comprising the same
CN101740581B (en) * 2008-11-26 2013-08-14 群创光电股份有限公司 Thin film transistor array substrate as well as application and manufacturing method thereof
KR20120060664A (en) * 2010-12-02 2012-06-12 삼성전자주식회사 Display apparatus and fabrication method of the same
CN102566170B (en) * 2010-12-24 2015-04-01 群创光电股份有限公司 Pixel substrate and fabrication method thereof, LCD( liquid crystal display) panel and LCD device
TWI446079B (en) * 2011-06-29 2014-07-21 Au Optronics Corp Pixel structure and driving method thereof
KR20150031387A (en) * 2013-09-13 2015-03-24 삼성디스플레이 주식회사 Liquid crystal display

Also Published As

Publication number Publication date
CN105137676A (en) 2015-12-09

Similar Documents

Publication Publication Date Title
US10551691B2 (en) Liquid crystal display device
US10520781B2 (en) Liquid crystal display
CN103869556B (en) Liquid crystal display device
US9551906B2 (en) Liquid crystal display
US9244310B2 (en) Liquid crystal display device and method of manufacturing the same
CN103852942B (en) Liquid crystal display
CN102854670B (en) Liquid crystal display method of controlling viewing angle, display panels and liquid crystal display
TW589505B (en) Liquid crystal display device
TW594147B (en) Liquid crystal display device
CN101916020B (en) Liquid crystal display
TWI374320B (en) Liquid crystal display devices
CN102692770B (en) Liquid crystal display device
CN105372886B (en) Liquid crystal display
US10168585B2 (en) Liquid crystal display
JP2014149524A (en) Liquid Crystal Display
CN102445791B (en) For liquid crystal display substrate and use the liquid crystal display of this substrate
US8982309B2 (en) Liquid crystal display device
TW594169B (en) In-plane switching mode liquid crystal display
CN103926757B (en) TFT array substrate, display panel and display device
TWI281942B (en) Liquid crystal display
CN104216180B (en) Liquid crystal display device
US8098356B2 (en) Liquid crystal display device
TWI234680B (en) A multi-domain liquid crystal display device
TWI226498B (en) Multi-domain vertical alignment LCD
TW544538B (en) Active matrix-type liquid crystal display device

Legal Events

Date Code Title Description
PB01 Publication
C06 Publication
SE01 Entry into force of request for substantive examination
C10 Entry into substantive examination
GR01 Patent grant
GR01 Patent grant