CN105112860B - A kind of cavitation method for implantation and device based on induced with laser shock wave focusing - Google Patents
A kind of cavitation method for implantation and device based on induced with laser shock wave focusing Download PDFInfo
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- CN105112860B CN105112860B CN201510596857.9A CN201510596857A CN105112860B CN 105112860 B CN105112860 B CN 105112860B CN 201510596857 A CN201510596857 A CN 201510596857A CN 105112860 B CN105112860 B CN 105112860B
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Abstract
It is positioned over the invention discloses a kind of cavitation method for implantation and device based on induced with laser shock wave focusing, including by elliptical reflector and workpiece to be processed in working solution；Incident laser passes through the reflection of light path system and acts on the near-end focal point of elliptical reflector by the focusing of convex lens, its focus；Laser caused shock wave during plasma stock wave and cavitation bubble caused by the induction of near-end focal point are crumbled and fall, centered on the near-end focal point of elliptical reflector, sphere is outwards propagated；Shock wave passes through the reflection of elliptical reflector, again in the distal end focal point convergence of elliptical reflector, converges the subparticle that the shock wave of enhancing is directly acted in working solution again, is implanted into workpiece surface.The invention enables induced with laser shock wave energy more to be concentrated, and improves the utilization ratio of induced with laser shock wave, and shock wave focusing position and its energy are adjustable, and the subparticle in working solution more effectively is implanted into workpiece surface, improves target implantation precision.
Description
Technical field
The present invention relates to micro-nano Ultraprecision Machining field, more particularly to it is a kind of based on induced with laser shock wave focusing
Cavitation method for implantation and device.
Background technology
Microcircuit refer to high density equivalent-circuit component and（Or）Part, and can be as the microelectronics device of separate piece
Part.MEMS (MEMS) refers to size at several millimeters or even smaller high-tech device, and its internal structure is typically in micron
Even nanometer scale, is an independent intelligence system.Mainly by sensor, actuator（Actuator）With micro- energy three parts
Composition.With miniaturization, intelligent, multi-functional, high integration and suitable for producing these features in enormous quantities.Electronics, medical science,
Had a wide range of applications in terms of industry, automobile and aerospace system.
Electrochemical deposition, particularly precise electrotyping technology have obtained extremely successful answer in the preparation of surface fine structure
With.Zheng Xiao tigers et al. (Zheng Xiaohu, Zhu obtain the electrotyping forming optical precision engineerings of metal micro structure arrays, and 2008,16
(3):The negative electrode sedimentary effect of metal ion 473-477.) is utilized, conductive core or insulation mask etc. is used in combination, reaches choosing
The effect of selecting property deposition, can prepare the fine structures such as dimpling array in matrix surface.Zhu of Nanjing Aero-Space University obtains (D.
Zhu , Y.B. Zeng. Micro electroforming of high-aspect-ratio metallic
Microstructures by using a movable mask.) etc. proposition movement plating technology, constantly move up
Mask, and be carried out continuously can eletroforming, the fine structure with high-aspect-ratio can be prepared in metal surface.They utilize this
Kind method, it is hundreds of microns to be successfully prepared characteristic size, highly reaches the fine structure array of several millimeters and sidewall.
Precise electrotyping prepares component by way of ion deposition, is very suitable for micro pipes from principle, and damage in the absence of instrument
Consumption and elaboration power etc..
The content of the invention
For deficiency of the prior art, present invention solves the technical problem that being to propose that one kind is based on induced with laser shock wave
The cavitation method for implantation and device of focusing so that induced with laser shock wave energy is more concentrated, and improves induced with laser shock wave
Utilization ratio, and improve shock wave and strengthen effect, the precision of target implantation.
In order to solve the above-mentioned technical problem, the cavitation provided in an embodiment of the present invention based on induced with laser shock wave focusing is planted
Enter method, comprise the following steps：
S1：Elliptical reflector and workpiece to be processed are positioned in working solution；
S2：Incident laser passes through the reflection of light path system and acts on elliptical reflecting by the focusing of convex lens, its focus
The near-end focal point of mirror；
S3：When laser energy is more than the breakdown threshold of liquid, the plasma of HTHP is produced, plasma is external
Radiation blast wave；Shock wave is also externally given off when cavitation bubble caused by induction is crumbled and fall after plasma disappearance；
S4：Laser caused punching during plasma stock wave and cavitation bubble caused by the induction of near-end focal point are crumbled and fall
Ripple is hit, centered on the near-end focal point of elliptical reflector, sphere is outwards propagated；
S5：Shock wave passes through the reflection of elliptical reflector, again in the distal end focal point convergence of elliptical reflector, converges again
The shock wave of poly- enhancing is directly acted on the subparticle in working solution, is implanted into the surface of workpiece.
Also include being provided with adjusting apparatus in the cavitation method for implantation based on induced with laser shock wave focusing of the present invention, in step
The position for changing Laser Focusing in elliptic reflector can be adjusted by the position of adjusting apparatus movement convex lens in rapid S2
Put.
Preferably, in step s 5, the structural parameters of elliptical reflector are adjusted, and then changes and focuses on rushing for distal end focus
Hit the position of intensity of wave and distal end focus.
Preferably, increase anisotropic material particle (such as CNT) in the working solution, pushed away using shock wave
Dynamic anisotropic material is implanted to the surface of workpiece.
Accordingly, implementing the cavitation implanted device based on induced with laser shock wave focusing of the present invention includes workpiece, work
Liquid, elliptical reflector, incident laser and light path system, the elliptical reflector and workpiece are located in the working solution, and incidence swashs
For light by the focusing reflected and pass through convex lens of light path system, its focus acts on the near-end focal point of elliptical reflector, sharp
Light produces shock wave during plasma stock wave and cavitation bubble caused by the induction of near-end focal point are crumbled and fall, and shock wave is with ellipse
Centered on the near-end focal point of circular irror, sphere is outwards propagated；Shock wave passes through the reflection of elliptical reflector, again in ellipse
The distal end focal point convergence of speculum, the shock wave for converging enhancing again are directly acted on the subparticle in working solution, will
It is implanted to the surface of workpiece.
Cavitation method for implantation and device provided in an embodiment of the present invention based on induced with laser shock wave focusing, have as follows
Beneficial effect：
Laser in cavitation method for implantation and device provided in an embodiment of the present invention based on induced with laser shock wave focusing
Focus acts on the near-end focal point of elliptical reflector, is converged at using elliptical reflector by shock reflection and again oval anti-
The distal end focal point of mirror is penetrated, on the subparticle in working solution, is planted using the shock wave of distal end focal point convergence
Enter the surface to workpiece.The invention enables induced with laser shock wave energy more to concentrate, and improves the utilization of induced with laser shock wave
Efficiency, the particle in working solution is more effectively implanted into workpiece surface, improves target implantation precision.The present invention is anti-using ellipse
Penetrate mirror and shock wave energy is converged at into distal end focal point, energy is more concentrated, and the target that more can be suitably used for complicated workpiece is planted
Enter.The cavitation method for implantation and device based on induced with laser shock wave focusing of the present invention employs elliptical reflector, and utilization is ellipse
The convergence effect of circular irror, carries out vernier focusing by shock wave caused by induced with laser, can thus improve impact Pohle
With rate, target implantation precision, whole processing unit (plant) is positioned among working solution, and the target particle of implantation is by working solution not cut-off
To give, workpiece surface will be put on again after shock wave focusing by elliptical reflector, shock wave focusing position and its energy are adjustable,
The target implantation that can adapt to various complicated workpiece requires.
Brief description of the drawings
Fig. 1 is the implantation for the cavitation method for implantation based on induced with laser shock wave focusing that the preferred embodiment of the present invention provides
Schematic diagram.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other under the premise of creative work is not made
Embodiment, belong to the scope of protection of the invention.
As shown in figure 1, the cavitation method for implantation based on induced with laser shock wave focusing that the preferred embodiment of the present invention provides
Implantation schematic diagram, Laser Focusing of the invention is in working solution, when laser energy is more than the breakdown threshold of liquid, it will production
The plasma of raw HTHP.The external radiation blast wave of plasma, plasma-induced caused cavitation bubble is when crumbling and fall
Also can external radiation blast wave.Shock wave is converged to the distal end focus strengthened in elliptical reflector again using elliptical reflector
Place, using the shock wave of enhancing is converged again on the subparticle in working solution, is implanted into the surface of workpiece.
Specifically, in the cavitation method for implantation based on induced with laser shock wave focusing of the present embodiment, elliptical reflector 5 and
Workpiece to be processed 8 is positioned over containing in working solution, the Parameter adjustable of incident laser 1, and by light path system reflection and through excess convexity
Lens（Do not indicated in figure）Focusing, its focus acted at the near-end focus 3 of elliptical reflector 5, and laser is at near-end focus 3
Plasma stock wave caused by induction and cavitation bubble 4 caused shock wave 2 during crumbling and fall, by with the near of elliptical reflector 5
Centered on holding at focus 3, sphere is outwards propagated.Shock wave passes through the reflection of elliptical reflector 5, again in elliptical reflector 5
Converged at distal end focus 6, the shock wave for converging enhancing is directly acted on the subparticle 7 in working solution, is implanted into work
The surface of part 8.
Preferably, the present invention can pass through adjusting apparatus（Do not indicated in figure）Swash to adjust to change the position of mobile convex lens
The position that light is focused in elliptic reflector 5；And the structural parameters of elliptical reflector 5 are adjustable, and then focusing can be changed
In the shock strength of distal end focus 6 and the position of distal end focus 6.
The present invention the cavitation method for implantation based on induced with laser shock wave focusing can also increase in working solution it is each to
Unlike material particle 7 (such as CNT), the surface of workpiece is implanted to using shock wave promotion anisotropic material particle.
Laser spot in cavitation method for implantation provided in an embodiment of the present invention based on induced with laser shock wave focusing is made
At the near-end focus 3 of elliptical reflector 5, shock wave 2 is reflected using elliptical reflector 5 and converges at elliptical reflecting again
At the distal end focus 6 of mirror 5, using the shock wave converged at distal end focus 6 on the subparticle 7 in working solution, by it
It is implanted to the surface of workpiece 8.The invention enables induced with laser shock wave energy more to concentrate, and improves the profit of induced with laser shock wave
With efficiency, the target implantation for adapting to various complicated workpiece requires, and improves the strong target implantation precision of shock wave.The present invention
Shock wave energy is converged at distal end focus 6 using elliptical reflector 5, energy is more concentrated, and more can be suitably used for complicated
The target implantation precision of workpiece.
The present invention, which implements the cavitation implanted device based on induced with laser shock wave focusing, includes workpiece 8, working solution, ellipse instead
Mirror 5, incident laser 1 and light path system are penetrated, the elliptical reflector 5 and workpiece 8 are located in the working solution, and incident laser 1 passes through
Cross the reflection of light path system and acted on by the focusing of convex lens, its focus at the near-end focus 3 of elliptical reflector 5, laser 1
Produce shock wave 2 during plasma stock wave and cavitation bubble 4 are crumbled and fall caused by induction at the near-end focus 3, shock wave 2 with
Centered at the near-end focus 3 of elliptical reflector 5, sphere is outwards propagated；Shock wave 2 passes through the reflection of elliptical reflector 5, again
Converged at the distal end focus 6 of elliptical reflector 5, converge fine that the shock wave of enhancing is directly acted in working solution again
On grain 7, the surface of workpiece 8 is implanted into.
The cavitation method for implantation and device based on induced with laser shock wave focusing of the present invention employs elliptical reflector 5,
Acted on using the convergence of elliptical reflector 5, shock wave caused by induced with laser 2 is subjected to vernier focusing, can thus be improved
Shock wave utilization rate, target implantation precision, whole processing unit (plant) are positioned among working solution, and the target particle of implantation is by working solution
It is continuing to supply, workpiece surface, shock wave focusing position and its energy will be put on again after shock wave focusing by elliptical reflector 5
Measure it is adjustable, can adapt to various complicated workpiece target implantation require.
Described above is the preferred embodiment of the present invention, it is noted that for those skilled in the art
For, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications are also considered as
Protection scope of the present invention.
Claims (5)
1. a kind of cavitation method for implantation based on induced with laser shock wave focusing, it is characterised in that comprise the following steps：
S1：By elliptical reflector（5）And workpiece to be processed（8）It is positioned in working solution；
S2：Incident laser (1) passes through the reflection of light path system and acts on elliptical reflector by the focusing of convex lens, its focus
（5）Near-end focus（3）Place；
S3：When laser (1) energy is more than the breakdown threshold of liquid, the plasma of HTHP is produced, plasma is external
Radiation blast wave；Cavitation bubble caused by induction after plasma disappearance（4）Also shock wave is externally given off when crumbling and fall；
S4：Laser (1) is in near-end focus（3）Plasma stock wave and cavitation bubble caused by place's induction（4）Produced during crumbling and fall
Raw shock wave, with elliptical reflector（5）Near-end focus（3）Centered on place, sphere is outwards propagated；
S5：Shock wave passes through elliptical reflector（5）Reflection, again in elliptical reflector（5）Distal end focus（6）Place's convergence,
Again the subparticle that the shock wave of enhancing is directly acted in working solution is converged（7）On, it is implanted into workpiece（8）Table
Face.
2. the cavitation method for implantation based on induced with laser shock wave focusing as claimed in claim 1, it is characterised in that also include
Provided with adjusting apparatus, the position that can move convex lens by adjusting apparatus in step s 2 changes Laser Focusing ellipse to adjust
Circular reflector（5）Interior position.
3. the cavitation method for implantation based on induced with laser shock wave focusing as claimed in claim 1, it is characterised in that in step
In S5, elliptical reflector is adjusted（5）Structural parameters, and then change focus on distal end focus（6）Shock strength and remote
Hold focus（6）Position.
4. the cavitation method for implantation based on induced with laser shock wave focusing as claimed in claim 1, it is characterised in that described
Increase anisotropic material in working solution, anisotropic material is promoted using shock wave, is implanted to workpiece（8）Surface.
5. a kind of device for implementing claim 1 methods described, it is characterised in that including workpiece（8）, working solution, elliptical reflecting
Mirror（5）, incident laser (1) and light path system, the elliptical reflector（5）And workpiece（8）In the working solution, incidence swashs
Light (1) passes through the reflection of light path system and acts on elliptical reflector by the focusing of convex lens, its focus（5）Near-end focus
（3）Place, laser (1) is in near-end focus（3）Plasma stock wave and cavitation bubble caused by place's induction（4）Produced during crumbling and fall
Shock wave, shock wave is with elliptical reflector（5）Near-end focus（3）Centered on place, sphere is outwards propagated；Shock wave is by oval
Speculum（5）Reflection, again in elliptical reflector（5）The convergence of distal end focus (6) place, the shock wave for converging enhancing again is straight
Connect the subparticle acted in working solution（7）On, it is implanted into workpiece（8）Surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510596857.9A CN105112860B (en) | 2015-09-18 | 2015-09-18 | A kind of cavitation method for implantation and device based on induced with laser shock wave focusing |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510596857.9A CN105112860B (en) | 2015-09-18 | 2015-09-18 | A kind of cavitation method for implantation and device based on induced with laser shock wave focusing |
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| Publication Number | Publication Date |
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| CN105112860A CN105112860A (en) | 2015-12-02 |
| CN105112860B true CN105112860B (en) | 2017-12-22 |
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| CN109019755B (en) * | 2018-07-16 | 2021-07-20 | 江苏大学 | Annular device for treating organic wastewater through laser cavitation |
| CN111300273B (en) * | 2020-02-17 | 2021-05-28 | 中国石油大学(华东) | Texture processing test device based on controllable cavitation erosion technology |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102248308A (en) * | 2011-06-24 | 2011-11-23 | 广东工业大学 | Method for performing microprocessing by utilizing laser cavitation micro jet flow |
| CN104907713A (en) * | 2015-06-03 | 2015-09-16 | 江苏大学 | Device and method for preparing spherical cavitation bubble |
| CN204918746U (en) * | 2015-09-18 | 2015-12-30 | 广东工业大学 | Device is implanted to cavitation based on focus of laser induction shock wave |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6960307B2 (en) * | 2002-01-18 | 2005-11-01 | Leclair Mark L | Method and apparatus for the controlled formation of cavitation bubbles |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102248308A (en) * | 2011-06-24 | 2011-11-23 | 广东工业大学 | Method for performing microprocessing by utilizing laser cavitation micro jet flow |
| CN104907713A (en) * | 2015-06-03 | 2015-09-16 | 江苏大学 | Device and method for preparing spherical cavitation bubble |
| CN204918746U (en) * | 2015-09-18 | 2015-12-30 | 广东工业大学 | Device is implanted to cavitation based on focus of laser induction shock wave |
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Granted publication date: 20171222 Termination date: 20190918 |