CN105088141A - Inductive coupling type plasma processing chamber, anti-corrosion insulation window of inductive coupling type plasma processing chamber and manufacturing method of anti-corrosion insulation window - Google Patents

Inductive coupling type plasma processing chamber, anti-corrosion insulation window of inductive coupling type plasma processing chamber and manufacturing method of anti-corrosion insulation window Download PDF

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CN105088141A
CN105088141A CN 201410222472 CN201410222472A CN105088141A CN 105088141 A CN105088141 A CN 105088141A CN 201410222472 CN201410222472 CN 201410222472 CN 201410222472 A CN201410222472 A CN 201410222472A CN 105088141 A CN105088141 A CN 105088141A
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corrosion
window
insulating
coating
resistant coating
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CN 201410222472
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Chinese (zh)
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贺小明
倪图强
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中微半导体设备(上海)有限公司
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Abstract

The invention provides an inductive coupling type plasma processing chamber, an anti-corrosion insulation window of the inductive coupling type plasma processing chamber and a manufacturing method of the anti-corrosion insulation window. The face, facing plasma, of the insulation window is coated with an anti-corrosion coating through enhanced physical or chemical vapor deposition, and heat treatment is carried out on the insulation window coated with the anti-corrosion coating. Heat treatment comprises the step of heat annealing. The manufactured anti-corrosion coating is large in thickness, even in texture, stable in structure and low in stress and cannot be broken.

Description

电感耦合型等离子体处理腔室及其抗腐蚀绝缘窗口及制造方法 Inductively coupled plasma processing chamber and the corrosion resistance and manufacturing method of the insulating window

技术领域 FIELD

[0001] 本发明涉及半导体制造领域,尤其涉及一种电感耦合型等离子体处理腔室及其抗腐蚀绝缘窗口及制造方法。 [0001] The present invention relates to semiconductor manufacturing, and more particularly relates to a method for producing an insulating window and inductively-coupled plasma processing chamber and corrosion resistance.

背景技术 Background technique

[0002] 等离子体处理腔室利用真空反应室的工作原理进行半导体基片和等离子平板的基片的加工。 [0002] The plasma processing chamber for processing a substrate and a semiconductor substrate by plasma flat working principle of the vacuum reaction chamber. 真空反应室的工作原理是在真空反应室中通入含有适当刻蚀剂源气体的反应气体,然后再对该真空反应室进行射频能量输入,以激活反应气体,来激发和维持等离子体,以便分别刻蚀基片表面上的材料层或在基片表面上淀积材料层,进而对半导体基片和等离子平板进行加工。 Working principle of the vacuum chamber is introduced into a vacuum reaction chamber a reaction gas containing a suitable etchant source gas, and then the RF energy input to the vacuum chamber to activate the reaction gas, and maintaining a plasma is excited, so that respectively etchable material layer on the surface layer of the substrate or depositing material on a substrate surface, and thus the semiconductor substrate and the flat plasma processing.

[0003] 由于等离子体处理腔室中存在等离子体,等离子体处理腔室曝露于等离子体的组件或者腔壁都会受到不同程度的腐蚀。 [0003] Because of the presence of a plasma in a plasma processing chamber, the plasma processing chamber components exposed to the plasma chamber wall, or are subject to different levels of corrosion. 业内也提出了不同的制造抗腐蚀组件的机制。 The industry also made a different mechanism of corrosion-resistant components manufacturing.

[0004] 如何制造稳定可靠的抗腐蚀组件,是本领域技术人员研发的目标。 [0004] how to make a stable and reliable corrosion-resistant components, it is skilled in the art R & D objectives.

发明内容 SUMMARY

[0005] 针对背景技术中的上述问题,本发明提出了一种电感耦合型等离子体处理腔室及其抗腐蚀绝缘窗口及制造方法。 [0005] In view of the above problems of the background art, the present invention provides an inductively coupled plasma processing chamber and the corrosion resistance and manufacturing method of the insulating window.

[0006] 本发明第一方面提供了一种抗腐蚀的电感耦合型等离子体处理腔室的绝缘窗口, 其中:所述绝缘窗口上利用增强型物理或者化学气相沉积在其面对等离子体的一面涂覆抗腐蚀涂层,所述涂覆了抗腐蚀涂层的绝缘窗口进行了热处理步骤。 [0006] The first aspect of the present invention provides an insulating window inductively coupled plasma processing chamber of an anti-corrosion, wherein: with enhanced physical or chemical vapor deposition on the insulating window side thereof facing the plasma coated with corrosion resistant coating, the coated corrosion-resistant coating insulating window of the heat treatment step.

[0007] 进一步地,所述热处理步骤包括热退火处理。 [0007] Further, the heat treatment step comprises a thermal annealing process.

[0008] 进一步地,所述抗腐蚀层涂层的材料包括以下任一种或任多种:Y203、YF3、Er02、 Al203、SiC、AlN、Zr02。 [0008] Furthermore, the anti-corrosion layer of the coating material comprises any one or more of any of the following: Y203, YF3, Er02, Al203, SiC, AlN, Zr02.

[0009] 进一步地,所述抗腐蚀涂层的厚度为大于40um。 [0009] Further, the corrosion resistant coating has a thickness greater than 40um.

[0010] 进一步地,所述抗腐蚀层涂层具有多层结构。 [0010] Further, the corrosion resistant coating layer having a multilayer structure.

[0011] 进一步地,所述绝缘窗口的陶瓷基体为石英或者氧化铝。 [0011] Further, the insulating ceramic base window is made of quartz or alumina.

[0012] 本发明第二方面提供了一种抗腐蚀的电感耦合型等离子体处理腔室的绝缘窗口的制造方法,其中,所述制造方法包括如下步骤: [0012] The second aspect of the present invention provides a method of manufacturing an insulating window inductively-coupled plasma processing chamber of an anti-corrosion, wherein, said method comprising the steps of:

[0013] 提供一绝缘窗口基体; [0013] providing a window insulating substrate;

[0014] 在所述绝缘窗口基体上利用增强型物理或者化学气相沉积在其面对等离子体的一面涂覆有一层抗腐蚀涂层; [0014] With enhanced chemical or physical vapor on the insulating substrate depositing a window facing the plasma side is coated with a corrosion resistant coating;

[0015] 然后对涂覆了抗腐蚀涂层的绝缘窗口执行热处理步骤。 [0015] and the insulating window of a corrosion resistant coating coated heat treatment step is performed.

[0016] 进一步地,所述热处理步骤包括热退火处理。 [0016] Further, the heat treatment step comprises a thermal annealing process.

[0017] 进一步地,所述制造方法还包括如下步骤:对绝缘窗口曝露于等离子体的一面进行粗糙化处理步骤,然后在所述绝缘窗口基体上利用增强型物理或者化学气相沉积在其面对等离子体的一面涂覆有一层抗腐蚀涂层。 [0017] Further, the method further comprising the step of: insulating window of the plasma exposed to one surface roughening treatment step, and with enhanced physical or chemical vapor deposition on the insulating base thereof facing window the plasma side is coated with a corrosion resistant coating.

[0018] 进一步地,所述粗糙化处理使得绝缘窗口的表面粗糙度小于0. 5um。 [0018] Further, roughening treatment such that the surface roughness of the insulating window is less than 0. 5um.

[0019] 进一步地,所述粗糙化处理使得绝缘窗口的表面粗糙度大于2um。 [0019] Further, roughening treatment such that the surface roughness of the insulating window is greater than 2um.

[0020] 进一步地,当所述抗腐蚀涂层具有多层结构时,所述制造方法还包括如下步骤:在对涂覆了抗腐蚀涂层的绝缘窗口执行热退火处理步骤之后,对绝缘窗口之上的多层结构的抗腐蚀涂层进行表面抛光或者研磨处理。 [0020] Further, when the corrosion-resistant coating having a multilayer structure, the method further comprising the step of: performing a thermal annealing step in the window of the insulating coating layer coated with a corrosion resistant Thereafter, the insulating window corrosion-resistant coating on the multilayer structure of the polished surface or the polishing process.

[0021] 进一步地,利用增强型物理或者化学气相沉积制造抗腐蚀涂层的温度取值范围为高于室温。 [0021] Further, with enhanced physical or chemical vapor deposition for producing corrosion-resistant coating temperature range is above room temperature.

[0022] 进一步地,所述抗腐蚀涂层的厚度为大于40um。 [0022] Further, the corrosion resistant coating has a thickness greater than 40um.

[0023] 进一步地,当所述抗腐蚀涂层具有多层结构时,其多层结构中的每一层单层结构的厚度取值范围为〇.Ium到30um,多层结构的数目能够达到1到100层。 [0023] Further, when the corrosion-resistant coating having a multilayer structure, the thickness of each layer ranges from single-layer structure in which a multilayer structure is 〇.Ium to 30um, the number of the multilayer structure can be achieved 1 to 100 layers.

[0024] 根据本发明一个具体实施例,本发明采用增强型物理或者化学气相沉积沉积的抗腐蚀涂层具有较高厚度,在绝缘窗口上执行热退火步骤,以稳定涂覆了涂层的绝缘窗口的结构稳定性。 [0024] According to a particular embodiment of the present invention, the present invention uses corrosion resistant coating enhanced physical vapor deposition or chemical deposition with a higher thickness, thermal annealing step performed on the insulating window, to stabilize the coated insulating coating structural stability window. 由于不同材料以及利用增强型物理或者化学气相沉积在离子轰击作用下形成抗腐蚀涂层,绝缘窗口上涂覆的抗腐蚀涂层必然具有剩余应力。 Due to the different materials and with enhanced physical vapor deposition or chemical corrosion resistant coating at the ion bombardment, the coated corrosion-resistant coating on the insulating window must have residual stress.

附图说明 BRIEF DESCRIPTION

[0025] 图1是电感耦合型等离子体处理腔室的结构示意图; [0025] FIG. 1 is a schematic view of an inductively coupled plasma processing chamber;

[0026] 图2a是现有技术的电感耦合型等离子体处理腔室的绝缘窗口的采用等离子体喷涂的方法制造表面涂层的剖面示意图; [0026] FIG 2a is a plasma spraying method of using a prior art insulating window inductively coupled plasma processing chamber for producing a schematic cross-sectional view of a surface coating;

[0027] 图2b是现有技术的电感耦合型等离子体处理腔室的绝缘窗口的利用块体陶瓷直接掺杂氧化钇的方法制造表面涂层的剖面示意图; [0027] FIG. 2b using bulk ceramic insulating window inductively-coupled plasma processing chamber is a schematic sectional view of the prior art method of producing the yttrium oxide surface coating doped directly;

[0028] 图3是根据本发明一个具体实施例的抗腐蚀的电感耦合型等离子体处理腔室的绝缘窗口的剖面结构示意图; [0028] FIG. 3 is a schematic cross-sectional structure of the insulating window of the inductively-coupled plasma processing chamber anticorrosion a particular embodiment of the present invention;

[0029] 图4是根据本发明一个具体实施例的一种抗腐蚀的电感耦合型等离子体处理腔室的绝缘窗口的制造方法步骤流程图; [0029] FIG. 4 is a step of a method of manufacturing an insulating window inductively-coupled plasma processing chamber of an anti-corrosion embodiment of the present invention, a particular embodiment of a flow diagram;

[0030] 图5是根据本发明一个具体实施例的一种抗腐蚀的电感耦合型等离子体处理腔室的绝缘窗口的制造方法的PEPVD的原理示意图; [0030] FIG. 5 is a schematic diagram of the principle of the method for manufacturing the insulating PEPVD window inductively-coupled plasma processing chamber of one embodiment of a corrosion resistant particular embodiment according to the present invention;

[0031] 图6是根据本发明一个具体实施例的一种抗腐蚀的电感耦合型等离子体处理腔室的绝缘窗口的制造方法的热退火步骤的曲线原理示意图; [0031] FIG. 6 is a schematic view of the principle of a thermal annealing step curve method of manufacturing an insulating window inductively-coupled plasma processing chamber is a particular example of a corrosion-resistant embodiment of the present invention;

[0032] 图7是根据本发明一个具体实施例的一种抗腐蚀的电感耦合型等离子体处理腔室的绝缘窗口的制造方法的热退火步骤针对不同材料层的参数列表; [0032] FIG. 7 is a list of parameters for the different material layers in accordance with the manufacturing method of thermal annealing step insulating window inductively-coupled plasma processing chamber of one embodiment of a corrosion resistant particular embodiment of the present invention;

[0033] 图8是布拉格原理示意图; [0033] FIG. 8 is a schematic view of the principle of Bragg;

[0034] 图9是利用布拉格原理进行直线拟合求斜率对本发明的发明效果进行分析的曲线图。 [0034] FIG. 9 is the slope of the linear fit method of the present invention the effect of a graph of the analysis of Bragg principle.

具体实施方式 detailed description

[0035] 以下结合附图,对本发明的具体实施方式进行说明。 [0035] conjunction with the drawings, specific embodiments of the present invention will be described.

[0036] 要指出的是,"半导体工艺件"、"晶圆"和"基片"这些词在随后的说明中将被经常互换使用,在本发明中,它们都指在处理反应室内被加工的工艺件,工艺件不限于晶圆、衬底、基片、大面积平板基板等。 [0036] It is noted that, "semiconductor process device", "wafer" and "substrate" these words are often used interchangeably in the following description, in the present invention, they all refer to the reaction chamber is in the process processing technology member member is not limited to the wafer process, the substrate, the substrate, a large area flat panel substrates. 为了方便说明,本文在实施方式说明和图示中将主要以"基片"为例来作示例性说明。 For convenience of explanation, in the description herein and in the illustrated embodiment primarily "substrate" as an example to be illustrative.

[0037] 本发明适用于所有的等离子体处理腔室中容易被等离子体腐蚀的组件,包括电容耦合型等离子体处理腔室(CCP)和电容耦合型等离子体处理腔室(ICP)。 [0037] The present invention is applicable to all plasma processing chamber assembly is easily plasma etching, comprising a capacitively coupled plasma processing chamber (CCP) and a capacitively coupled plasma processing chamber (ICP). 例如,电容耦合型等离子体处理腔室的气体喷淋头(showerhead),以及各种腔室侧壁顶板等部位。 For example, the gas shower head capacitively coupled plasma processing chamber (showerhead), as well as various other parts of the top plate of the chamber sidewall. 下文将以电容耦合性等离子体处理腔室的绝缘窗口为例进行说明。 Insulating window will capacitively coupled plasma processing chamber described below as an example. 需要说明的是,虽然本文将以电容耦合性等离子体处理腔室的绝缘窗口为例进行说明,但是其不能用于限制本发明,本发明的应用范围不限于此。 Note that, herein, although an insulating window will capacitively coupled plasma processing chamber described as an example, but it is not intended to limit the present invention, the scope of application of the present invention is not limited thereto.

[0038] 图1是根据本发明一个具体实施例的电感耦合等离子体处理装置的结构示意图。 [0038] FIG. 1 is a schematic view of an inductively coupled plasma processing apparatus according to the present embodiment of the invention, a particular embodiment. 图2示出根据本发明一个实施例的等离子处理装置200。 Figure 2 shows an embodiment of the present invention, the plasma processing apparatus 200. 应当理解,其中的电感耦合等离子体处理装置200仅仅是示例性的,所述200实际上也可以包括更少或额外的部件,部件的排列也可以不同于图2中所示出。 It should be appreciated wherein the inductively coupled plasma processing apparatus 200 is merely exemplary, and the arrangement 200 may actually include fewer or additional components, two components also shown may be different from the FIG.

[0039] 图1示出了根据本发明第一实施例的电感耦合等离子体处理装置的截面图。 [0039] FIG. 1 shows a sectional view of an inductively coupled plasma processing apparatus according to the first embodiment of the present invention. 电感耦合等离子体处理装置200包括金属侧壁202和绝缘顶板204,构成一个气密的真空封闭壳体,并且由抽真空泵(未示出)抽真空。 Inductively coupled plasma processing apparatus 200 includes a metal top plate 204 and the insulating side walls 202, constituting a closed housing in an airtight vacuum, and evacuated by a vacuum pump (not shown). 所述绝缘顶板204仅作为示例,也可以采用其它的顶板样式,比如穹顶形状的,带有绝缘材料窗口的金属顶板等。 The insulating top plate 204 of example only, the top plate may be employed other patterns, such as a dome shape, a metal roof window with an insulating material, and the like. 基座206包括一静电夹盘(未示出),所述静电夹盘上放置着待处理的基片W。 Base 206 includes an electrostatic chuck (not shown), the placement of the electrostatic clamp a substrate to be processed on the disc W. 偏置功率被施加到所述静电夹盘上,以产生对基片W的夹持力。 Bias power is applied to the electrostatic chuck on the disc, to generate a clamping force on the substrate W. 射频电源208的射频功率被施加到位于绝缘顶板204上的射频功率发射装置上。 RF RF power supply 208 is applied to the insulating top plate 204 on the RF power transmitting device. 其中,在本实施例中,所述射频发射装置包括射频线圈210。 In the present embodiment, the radio frequency transmitting means 210 comprises a radio frequency coil. 处理气体从气源经过管线被供应到反应腔内,以点燃并维持等离子,从而对基片W进行加工。 Process gas from a gas source via a line is supplied to the reaction chamber to ignite and sustain the plasma, so that the substrate W to be processed. 优选地,处理气体从气体注入口212进入腔室。 Preferably, the process gas from the gas injection port 212 into the chamber.

[0040] 参见图1,可知,绝缘窗口204的背面直接曝露于制程区域P,长期处于制程区域P 中的等离子体的腐蚀之下。 [0040] Referring to Figure 1, it is found, the back surface of the insulating window 204 is directly exposed to the processing region P, P long-term corrosion under the plasma processing region. 因此,现有技术也采用了很多抗腐蚀机制试图解决这个问题,但是也带来了新的问题。 Therefore, the prior art also uses a lot of anti-corrosion mechanism of trying to solve this problem, but it also brings new problems. 例如,利用氧化铝Al2O3制造的绝缘窗口204会引起Al金属污染,金属污染是等离子体处理腔室中的大忌,绝缘窗口204位于基片W的正上方,若金属污染从绝缘窗口204掉落在基片W上,将会对基片造成不可逆转的损坏。 For example, the use of an insulating window 204 made of alumina Al2O3 Al causes metal contamination is metal contamination in the plasma processing chamber taboo, located directly above the substrate W insulating window 204, when the metal contamination from the insulating window 204 Dropped on the substrate W, it will cause irreversible damage to the substrate. 而用石英制造的绝缘窗口又往往使用寿命短。 The insulation of windows made of quartz is often short life.

[0041] 为了制造出稳定可靠的绝缘窗口,工程师采用了许多不同方法来制造具有一抗腐蚀层的电感耦合型等离子体绝缘窗口。 [0041] In order to produce a stable and reliable insulation window, engineers use many different methods for producing inductively coupled plasma insulating window having a corrosion resistant layer. 图2a是现有技术的电感耦合型等离子体处理腔室的绝缘窗口的采用等离子体喷涂的方法制造表面涂层的剖面示意图。 Figure 2a is a schematic cross-sectional view of the plasma spraying method using the insulating window prior art inductively coupled plasma processing chamber for producing a surface coating. 如图2a所示,利用等离子喷涂(plasmaspray)制造涂覆在绝缘窗口104表面104a之上的抗腐蚀涂层dll由于利用喷涂的氧化钇粒子形成的,质地松软,并且具有多孔状疏松组织,如图2所示其中具有很多孔洞a。 As shown in FIG. 2a using plasma spraying (plasmaspray) manufactured dll coated corrosion-resistant coating on the surface 104a of the insulating window 104 since the particles sprayed yttria formed, soft texture, and a porous mass of loose tissue, such as Figure 2 has a number of holes wherein a. 利用等离子喷涂(plasmaspray)制造的抗腐蚀涂层dll通常导致形成的涂层具有高表面粗糙度(Ra大于4微米或更多)和相应地高孔隙度(体积率大于3 % ),在等离子体环境中中易产生颗粒污染。 By plasma spraying (plasmaspray) producing an anti-corrosion coating typically results dll formed coating has a high surface roughness (Ra greater than 4 microns or more) and a correspondingly high porosity (volume ratio of greater than 3%) in plasma environment, is easy to produce particle contamination. 此外,由于孔洞a中还包含其他气体,例如氮气等,使得抗腐蚀层dll的抗腐蚀材料纯度下降非常多,当抗腐蚀层dll由于腐蚀作用逐渐变薄,孔洞a 中的气体会逐渐被放出,也会成为基片制程过程中的杂质气体。 Further, since the holes in a further comprise other gases, such as nitrogen, such that the anti-corrosion layer purity corrosion-resistant material dll decreased very much, when the anti-corrosion layer due to the corrosive effect of tapering dll, a hole in the gas will gradually be released , the substrate will become the impurity gas during the process. 因此,现有技术利用等离子体喷涂方法制造的绝缘窗口抗腐蚀层dll具有高粗糙度和多孔结构,使得绝缘窗口104或者抗腐蚀层易产生颗粒,其有可能导致制程基片的污染。 Thus, the prior art insulating window by a plasma spray process for producing corrosion resistant layer having a high roughness dll and porous structure, so that the insulating window 104 or the anti-corrosion layer is easy to produce particles, which may lead to contamination of the process substrate. 另外,由于气体注入孔内的等离子体喷涂层非常粗糙并和绝缘窗口104的基体具有较弱的粘附力,当这种被喷涂过的气体喷淋头在等离子处理腔室中使用时,所述颗粒会从气体注入口出来,掉落到基片上。 Further, since the gas injection holes and a plasma sprayed layer very rough and the base insulating window 104 having weak adhesion, when this gas is sprayed through the shower head in a plasma processing chamber using the said particles may come out from the gas inlet, dropping onto the substrate.

[0042] 图2b是现有技术的电感耦合型等离子体处理腔室的绝缘窗口的采用块体陶瓷直接掺杂氧化钇的方法制造表面涂层的剖面示意图,其利用块体陶瓷直接掺杂氧化钇抗腐蚀材料来制造绝缘窗口104,但是这样制造的绝缘窗口104抗热冲击性能差,存在较大的开裂失效风险。 [0042] FIG 2b is a schematic cross-sectional view of the surface coating method using a ceramic block directly yttria-doped insulating window prior art inductively coupled plasma processing chamber manufactured utilizing bulk ceramic oxide doped directly yttrium corrosion resistant material to make the insulating window 104, but the heat insulating window 104 for producing such a shock performance is poor, there is a large risk of cracking failure. 如图2b所示,这样制造的绝缘窗口104仍然存在很多孔洞a。 As shown in FIG 2b, the insulating window 104 thus produced are still many holes a.

[0043] 此外,工程师还采用许多其他方法来制造绝缘窗口,例如块体氧化钇基陶瓷固溶体或复相陶瓷,但是制造成本非常高高。 [0043] In addition, engineers also use many other methods of producing an insulating window, e.g. bulk yttria-based ceramic composite ceramics or a solid solution, but the manufacturing cost is very high. 再例如,复合结构陶瓷的绝缘窗口,如用氧化铝和氧化钇双层粉料烧结压制陶瓷窗口,加工复杂,成本高。 As another example, a ceramic composite structure of an insulating window, such as double pressing with sintered alumina powder and yttria ceramic window, processing is complicated and costly.

[0044] 为了解决上文出现的缺陷,本发明一种抗腐蚀的电感耦合型等离子体处理腔室200的绝缘窗口204,以改善由氧化铝制程的电感耦合型等离子体处理腔室200的性能。 [0044] In order to solve the above defects, the present invention is an inductively coupled plasma processing chamber corrosion-resistant insulating window 200 204, to improve the performance of the inductively-coupled plasma processing chamber 200 made of alumina process . 图3是根据本发明一个具体实施例的电感耦合型等离子体处理腔室的绝缘窗口及其抗腐蚀涂层的剖面示意图,本发明利用等离子体增强型物理或者化学气相沉积(PEPVD或者PECVD) 制程在绝缘窗口204上面对等离子体的一面204a沉积了一层厚且致密的抗腐蚀涂层d2,然后对所述涂覆了抗腐蚀涂层的绝缘窗口204进行了热处理步骤。 Figure 3 is an insulating window according to the present invention, inductively-coupled plasma processing chamber according to a schematic cross-sectional view of a corrosion-resistant coating and the particular embodiment, the present invention utilizes plasma-enhanced chemical or physical vapor deposition (PEPVD or PECVD) process plasma-facing side 204a is deposited a corrosion-resistant coating layer thickness d2 and dense, and the insulating window of the coated corrosion-resistant coating of the heat treatment step 204 is performed on the insulating window 204.

[0045] 根据本发明的一个优选实施例,所述热处理步骤包括热退火处理。 [0045] According to a preferred embodiment of the present invention, the heat treatment step comprises a thermal annealing process. 增强型物理或者化学气相沉积沉积的抗腐蚀涂层虽然可以达到较高厚度,但是抗腐蚀涂层中的组织稳定性欠佳,原子之间的晶体结合度有缺陷,具有较高应力,这样的抗腐蚀涂层容易开裂,开裂的抗腐蚀层在制程过程中容易被制程用等离子体轰击从而掉落在腔室内成为颗粒污染或者金属污染,甚至掉落在基片W上使得基片W报废。 Enhanced corrosion resistant coating or physical vapor deposition, chemical deposition, although the thickness can reach high, but corrosion-resistant coating of poor structural stability, binding between atoms of the crystal defects, has a higher stress, such anti-corrosion coating prone to cracking, the cracking process in the anti-corrosion layer during the process can easily be bombarded by a plasma in the chamber thereby falling into particles or metal contamination contamination, even falling on the substrate such that the substrate W W scrapped. 热退火步骤能够使得抗腐蚀涂层中的原子之间相互震动,填补原子间空隙,使得相互之间结合得更加紧密。 Thermal annealing step can be made between the corrosion-resistant coating atom to shock, to fill the voids between the atoms, so that the more tightly bound to each other. 本发明利用增强型物理或者化学气相沉积制造的抗腐蚀层厚度厚,并且结构上无空隙,其具有良好致密的原子结构或者无定型结构。 The present invention utilizes enhanced chemical vapor deposition or physical anti-corrosion layer made thick, and the void free structure, which structure has good dense atom or amorphous structure. 如图3所示,绝缘窗口204上的抗腐蚀层d2厚度高,且质地紧密,表面光滑,并未产生任何孔洞。 3, the high anti-corrosion layer thickness d2 of the insulating window 204 and close texture, smooth surface, does not have any holes. 等离子体增强型物理气相沉积(PEPVD)工艺来能够制造一种具有良好或者紧密颗粒结构和随机晶体取向(randomcrystalorientation)的抗腐蚀涂层d2。 Plasma enhanced physical vapor deposition (PEPVD) processes or can be produced having a good grain structure and compact random crystal orientation (randomcrystalorientation) corrosion resistant coating layer d2.

[0046] 典型地,加热的速率应小于3°C或者min。 [0046] Typically, the heating rate should be less than 3 ° C or min. 典型地,加热温度的取值范围应当在KKTC至750°C甚至更高,加热时间的取值范围应当在IOmin到12h或者更久。 Typically, the range of the heating temperature should be even higher in KKTC to 750 ° C, the heating time should range in IOmin to 12h or longer. 上述热退火步骤的时间和条件应依赖于所需抗腐蚀涂层的厚度、绝缘窗口的厚度和尺寸等。 Time and conditions for the above thermal annealing step should be dependent on the thickness, dielectric window size and thickness desired corrosion resistant coating, and the like.

[0047] 进一步地,所述抗腐蚀层涂层的材料包括以下任一种或任多种:Y203、YF3、Er02、 Al203、SiC、AlN、Zr02。 [0047] Furthermore, the anti-corrosion layer of the coating material comprises any one or more of any of the following: Y203, YF3, Er02, Al203, SiC, AlN, Zr02. 进一步地,所述绝缘窗口204 的陶瓷基体为石英或者氧化铝。 Further, the insulating ceramic base 204 window made of quartz or alumina. 进一步地,所述抗腐蚀涂层的厚度为大于40um,例如45um、50um、58um、63. 5um、IOOum等。 Further, the corrosion resistant coating has a thickness of more than 40um, e.g. 45um, 50um, 58um, 63. 5um, IOOum like.

[0048] 根据本发明一个变形例,所述抗腐蚀层涂层具有多层结构。 [0048] According to a modified embodiment of the present invention, the corrosion resistant coating layer having a multilayer structure. 所述抗腐蚀涂层具有多层结构,其中,所述抗腐蚀层的剩余应力(residualstress)在多层结构中之间的界面得到了释放,因此厚且致密的抗腐蚀层能够以良好的粘附力和性能粘附于绝缘窗口204之上。 The corrosion-resistant coating having a multilayer structure, wherein the residual stress of said anti-corrosion layer (residualstress) interface between the multilayer structure has been released, so thick and dense corrosion layer with good adhesion can be attachment force and adhered on the insulating properties of the window 204. 当所述抗腐蚀涂层具有多层结构时,其多层结构中的每一层单层结构的厚度取值范围为0.Ium到30um,多层结构的数目能够达到1到100层。 When the corrosion-resistant coating having a multilayer structure, the thickness of each layer ranges from single-layer structure in which a multilayer structure is 0.Ium to 30um, the multilayer structure can reach the number of 1 to 100 layers. 根据本发明一个优选实施例,将最优选的每个单层材料复合在一起形成具有一定厚度的多层结构的抗腐蚀涂层,其厚度可以利用增强型物理或者化学气相沉积达到60um及以上。 According to a preferred embodiment of the present invention, the most preferred composite together each form a single layer of material corrosion-resistant coating layer of the multilayer structure having a certain thickness, the thickness may be enhanced by using physical or chemical vapor deposition to achieve the above and 60um. 多层结构的之间界面的增加可以有效地降低由多层材料结构(例如不同晶体结构或者弹性模量)或者不同材料特性(例如不同的热膨胀系数)带来的涂层剩余应力。 Increase the interface between the multilayer structure can effectively reduce the residual stress in the coating material, a multilayer structure (e.g. crystal structure or different modulus of elasticity) or a different material characteristics (e.g., different coefficients of thermal expansion) brings. 绝缘窗口204上沉积有多层抗腐蚀涂层,以使得被涂覆抗腐蚀涂层的绝缘窗口204具有增大的涂层厚度、面对等离子体化学的稳定表面以及预期功能,以改善等离子体处理腔室的制程性能。 The multilayer corrosion-resistant coating deposited on the insulating window 204, so that the window is coated with corrosion resistant insulating coating layer 204 has a coating thickness increased, the surface facing the plasma chemical stability and the intended function, to improve plasma treatment process performance chamber. 区别于单层涂层的结构,相同材料被沉积但具有多层结构的涂层结构能够达到增大的厚度,由于多层结构增加的界面面积可以释放涂层应力(所述涂层应力通常随着材料层或涂层的厚度增加而增加),其产生裂缝或裂开的风险被降低。 Different from the structure of a single layer coating, the same material but having a multilayer structure is deposited a coating structure can achieve an increased thickness, due to the increased interfacial area of ​​the multilayer structure may be a stress release coating (typically with the coating stress the thickness of the layer or coating material increases), the risk that cracks or rupture is reduced. 其中,多层材料结构的顶层材料必然是抗腐蚀涂层材料,以克服等离子体制程环境的腐蚀。 Wherein the top layer material is a multilayer structure of the material must be corrosion-resistant coating material, in order to overcome the corrosive plasma process environment.

[0049] 如图4所示,本发明第二方面提供了一种抗腐蚀的电感耦合型等离子体处理腔室200的绝缘窗口204的制造方法,其中,所述制造方法包括如下步骤:首先执行步骤S11,提供一绝缘窗口204基体;然后执行步骤S12,在所述绝缘窗口204基体上利用增强物理或者化学气相沉积在其面对等离子体的一面204a上涂覆有一层抗腐蚀涂层d2 ;然后对涂覆了抗腐蚀涂层d2的绝缘窗口204执行热处理步骤根据本发明一个具体实施例,所述热处理步骤包括热退火处理。 [0049] As shown in FIG 4, a second aspect of the present invention provides a method of manufacturing an inductively coupled plasma processing chamber is an anti-corrosion of the insulating window 200 to 204, wherein said method comprising the steps of: performing first step S11, the window 204 providing an insulating substrate; then execute step S12, the window 204 on the insulating substrate with enhanced physical or chemical vapor deposition at a plasma side thereof facing 204a is coated with a corrosion-resistant coating D2; then the window of the insulating coated corrosion-resistant coating 204 performs heat treatment step d2 is a specific embodiment of the present invention, the heat treatment step comprises a thermal annealing process.

[0050] 图5是根据本发明一个具体实施例的一种抗腐蚀的电感耦合型等离子体处理腔室的绝缘窗口的制造方法的PEPVD的原理示意图。 [0050] FIG. 5 is a schematic diagram of the principle of the method for manufacturing the insulating PEPVD window inductively-coupled plasma processing chamber of one embodiment of a corrosion resistant particular embodiment according to the present invention. 具体地,其中,所述增强型物理或者化学气相沉积在低压或真空腔室环境下执行,其中至少一个沉积元素或成份从一材料源被蒸发或溅射出来,被蒸发或溅射出来的材料浓缩在绝缘窗口204的基体表面,这部分制程是一个物理过程,在这里被称为物理气相沉积或PVD部分。 In particular, wherein the enhanced physical or chemical vapor deposition is performed under a low pressure environment or vacuum chamber, wherein the at least one deposition element or component is evaporated or sputtered from a source material, the material is sputtered or evaporated concentrated base surface of the insulating window 204, which is part of the process is a physical process, referred to herein as part of a physical vapor deposition or PVD. 同时,一个或多个等离子体源被用来发出离子或产生等离子体以围绕气体喷淋头表面,至少一沉积元素或成份被电离并与被蒸发或溅射的元素或成份在等离子体中或在气体喷淋头表面上反应。 At the same time, one or more plasma ion source is used to emit or to surround a plasma generating gas shower head surface, or at least a deposition of elemental components are ionized and the elements or components are evaporated or sputtered or plasma the reaction on the surface of the gas shower head. 从而,绝缘窗口204耦接于负电压,使得其在沉积制程过程中被电离原子或离子轰击,这是是PEPVD中的"等离子体增强"(plasmaenhanced,或者PE)功能。 Thus, the insulating window 204 is coupled to a negative voltage, so that it is ionized atom or ion bombardment during the deposition process, in which PEPVD yes "plasma-enhanced" (plasmaenhanced, or PE) function.

[0051] -源材料820包括待沉积组份,其通常为固体形式。 [0051] - the source material 820 comprises a set of parts to be deposited, which is usually in solid form. 例如,如果待沉积薄膜是Y203 或YF3,源材料820应包括钇(或氟)--可能还有其它材料,例如氧气,氟(或钇)等。 For example, if the film is to be deposited or Y203 of YF3, source material 820 include yttrium (or fluoro) - There may be other materials, such as oxygen, fluorine (or yttrium) and the like. 为了形成物理沉积,所述源材料被蒸发或溅射。 To form a physical deposition, the source material is evaporated or sputtered. 在图1所示的具体实施例中,利用电子枪(electrongun)825来执行蒸发,其将电子束(electronbeam)830导向源材料820之上。 In the particular embodiment illustrated in FIG. 1, an electron gun (electrongun) 825 performs evaporation, the guide 830 on which an electron beam source material (electronbeam) 820. 当源材料被蒸发,原子和分子位置向待涂覆部件绝缘窗口204飘移并凝结于待涂覆部件绝缘窗口204上,图示中用虚线箭头示出。 When the source material is evaporated atoms and molecules to the position of the window to be coated insulating member 204 and condensed on the drift member to be coated insulating window 204, shown dashed arrow shown.

[0052] 等离子体增强型部件由气体注入口(gasinjector)212组成,其向腔室100内注入活性或非活性源气体,例如包含氩、氧、氟的气体,图示中用虚线示出。 [0052] The plasma enhanced member by the gas injection port (gasinjector) consisting of 212, active or inactive source gas injected into the chamber 100, for example comprising argon, oxygen, fluorine gas, illustrated by dashed lines. 等离子体利用等离子体源被维持于绝缘窗口204的前方,等离子体源例如射频、微波等,在本实施例中示例性地由耦合于射频源214的线圈121示出。 Plasma using a plasma source is maintained at the front of the insulating window 204, a plasma source such as radio frequency, microwave, etc., in the exemplary embodiment by the coil 121 coupled to the RF source 214 is shown in this embodiment. 不受理论的束缚,我们认为在PE部分有几个过程发生。 Without being bound by theory, we believe that there are several processes take place in the PE section. 首先,非活性离子化气体组份,例如氩,轰击绝缘窗口204,当它被聚集后从而使得薄膜变得致密。 First, parts of the inert gas is ionized groups, such as argon bombardment insulating window 204, when it is condensed so that the film becomes dense. 离子轰击的效果源自于负偏压施加至绝缘窗口204,或源自于由等离子体源发出的并对准绝缘窗口204的离子。 Effects of ion bombardment derived from a negative bias is applied to the insulating window 204, or an ion derived from the alignment of the insulating window 204 and emitted by the plasma source. 此外,例如氧或氟的活性气体组份或自由基与蒸发的或溅射的源材料反应,所述反应或者位于绝缘窗口204的表面上或者位于腔室内。 Further, for example, parts of oxygen gas or reactive groups or fluorine radicals and the sputtering evaporation source material, or reaction, or a reaction on the surface of the insulating window 204 or in the chamber. 例如,源材料钇与氧气反应生成了含钇涂层,例如Y203或者YF3。 For example, yttrium source material react with oxygen to generate yttrium-containing coating, such as Y203 or YF3. 因此,上述制程具有物理过程(轰击和凝结)和化学过程(例如,氧化和电离化)。 Accordingly, the above-described processes have physical processes (coagulation and bombardment) and chemical processes (e.g., oxidation and ionization).

[0053] 其中,上述等离子体源可以被用于离子化、分解和激发反应气体以使得沉积制程能够在低衬底温度和高涂覆生长速度下执行(由于等离子体产生更多的离子和自由基), 或者被用于产生针对绝缘窗口204的能量离子(energeticions),以使得离子轰击绝缘窗口204的表面并有助于在之上形成厚的和浓缩的抗腐蚀涂层。 [0053] wherein said plasma source may be used for ionization, excitation and decomposition of the reaction gas so that the deposition process can be performed at a low substrate temperature and high coating growth rates (due to the plasma generating more ions and free yl), or insulated window is used to generate energy for the ions (energeticions) 204 so that the ion bombardment of the surface of the insulating window 204 contributes to formation of a thick and concentrated and corrosion resistant coating on top.

[0054] 进一步地,所述制造方法还包括在步骤S12和S13之间执行如下步骤:对绝缘窗口204曝露于等离子体的一面进行粗糙化处理步骤,然后在所述绝缘窗口204基体上利用增强物理或者化学气相沉积在其面对等离子体的一面204a涂覆一层抗腐蚀涂层。 [0054] Further, the manufacturing method further comprising performing the following steps between steps S12 and S13: an insulating window 204 is exposed to a plasma processing one surface roughening step, and then using the window on the insulating substrate 204 reinforced physical or chemical vapor deposition coating 204a on its side facing the plasma corrosion resistant coating layer.

[0055] 其中一种可能的状况是涂覆于绝缘窗口上的抗腐蚀涂层具有抗压应力并且绝缘窗口204具有较高应力。 [0055] One possible condition is a corrosion resistant coating coated on the insulating window having a compressive stress and the insulating window 204 has a higher stress. 典型地,热退火步骤包括热处理。 Typically, thermal annealing step includes a heat treatment. 将涂覆了抗腐蚀涂层的绝缘窗口204在一段时间保持在特定温度和热度下,则能够有效地降低应力。 The coated corrosion-resistant coating of the insulating window 204 is maintained at a period of time at a specific temperature and heat, it is possible to effectively reduce the stress. 这是由于抗腐蚀涂层中的微结构缺陷,例如原子在晶体或者界面区域中的变位、晶界以及不均匀分布。 This is due to micro structural defects in the corrosion-resistant coating, for example in crystalline or displaced atoms in the interface region, the grain boundary and distributed unevenly. 上述抗腐蚀涂层中的微结构缺陷可以通过原子扩散得到减少乃至消除。 Micro structural defect in the above-described corrosion-resistant coating may be reduced or even eliminated by atomic diffusion. 因此,热退火步骤可以帮助减少抗腐蚀涂层的剩余应力,因此能够改善抗腐蚀涂层的结构稳定性。 Therefore, thermal annealing step may help to reduce the residual stress corrosion-resistant coating, it is possible to improve the structural stability of the corrosion-resistant coating.

[0056] 可选地,绝缘窗口204的表面粗糙度小于0. 5um,以使得之后在其表面上涂覆抗腐蚀涂层,例如粗糖度为〇• 45um、0. 3um、0. 32um、0. 28um、0. 25um、0. 13um等。 [0056] Alternatively, the insulating window 204 surface roughness of less than 0. 5um, so that after the coated corrosion-resistant coating on its surface, for example, crude sugar content billion • 45um, 0. 3um, 0. 32um, 0 . 28um, 0. 25um, 0. 13um and so on.

[0057] 可选地,绝缘窗口的表面粗糙度大于2um,例如2. 8、3、3. 53、4. 85、5. 83等。 [0057] Alternatively, the surface roughness of the insulating window is larger than 2um, for example, 2. 8,3,3. 53,4. 85,5. 83 and the like. 当抗腐蚀涂层致密并且厚度达到40um以上时,粗糙度比较大的绝缘窗口可以对抗腐蚀涂层具有良好的粘附力。 When the dense and corrosion resistant coating thickness of 40um or more, a relatively large roughness of the insulating window against corrosion coating having good adhesion. 这是由于绝缘窗口表面粗糙度的增加,增加了抗腐蚀涂层和基体表面之间界面区域的接触面积,将抗腐蚀涂层接触区域从二维片段(2-dimensionalfraction)变为三维片段(3-dimensionalfraction)。 This is due to the increased surface roughness of the insulating window, increases the contact area between the interface region of the corrosion-resistant coating and the substrate surface, the contact area of ​​the corrosion-resistant coating from a two dimensional segment (2-dimensionalfraction) segment becomes a three-dimensional (3 -dimensionalfraction). 粗糙表面上的沉积抗腐蚀涂层能够导致涂层随机晶体取向的形成,并导致抗腐蚀涂层和绝缘窗口204基体之间的界面应力的释放,这增强了绝缘窗口204基体与抗腐蚀涂层的吸附力,并促进了厚的和致密的涂层在其上形成。 Depositing on the roughened surface of the corrosion-resistant coating can result in coating form a random crystal orientation, and results in the release of the interfacial stress between the corrosion-resistant coating and the insulating base window 204, window 204 which enhances the insulating substrate and the corrosion-resistant coating adsorption, and it promotes the thick and dense coating is formed thereon.

[0058] 进一步地,当所述抗腐蚀涂层具有多层结构时,所述制造方法还包括如下步骤:在对涂覆了抗腐蚀涂层的绝缘窗口204执行热退火处理步骤之后,对绝缘窗口之上的多层结构的抗腐蚀涂层进行表面抛光或者研磨处理。 [0058] Further, when the corrosion-resistant coating having a multilayer structure, the method further comprising the step of: the window in the insulating coating of the corrosion-resistant coating of step 204 after performing a thermal annealing process, the insulation corrosion-resistant coating on top of the multilayer structure of the window or surface finish grinding. 结合表面粗糙度的修整以及多层结构的形成,具有较高厚度的等离子体抗腐蚀涂层可以以增强界面粘附力沉积于绝缘窗口之上。 Binding finishing surface roughness and forming a multilayer structure, the plasma having a high corrosion-resistant coating thickness to enhance the interfacial adhesion may be deposited on the insulating window. 减少表面的粗糙度可以帮助减少工艺制程过程中的聚合物沉积,因此能够减少金属污染。 Reducing the surface roughness can help reduce the polymer deposition during the process recipe, metal contamination can be reduced. 典型地,所述绝缘窗口的表面可以通过研磨或者抛光的方式根据工艺需要具有特定粗糙度, 优选地为〇•Ium以下。 Typically the surface of the insulating window may have a certain roughness by grinding process according to the need or polishing manner, preferably less square • Ium. 可选地,通过悬浮液清洗(slurrycleaning)、雾化清洁(aerosol cleaning)、爆炸(blasting)对抗腐蚀涂层或者绝缘窗口表面进行粗糙化处理。 Alternatively, the suspension by washing (slurrycleaning), cleaning spray (aerosol cleaning), blast (DEMOLITION) against corrosion coating or an insulating window surface roughening treatment. 上述粗糙化表面处理可以修复绝缘窗口表面的沉积,以减少刻蚀制程中的颗粒污染。 The above-described surface roughening treatment can be repaired depositing an insulating surface of the window, to reduce particle contamination of the etching process. 上述抛光或者研磨或者粗糙化处理等表面处理步骤可以根据工艺需要在热退火步骤之前或者之后进行。 Said buffing or polishing a surface roughening treatment or a treatment step may be performed before or after the thermal annealing step according to process needs.

[0059] 进一步地,利用增强型物理或者化学气相沉积制造抗腐蚀涂层的温度取值范围为高于室温至300°C甚至更高。 [0059] Further, the anti-corrosion coating to be higher than a temperature in the range from room temperature to 300 ° C or even higher with enhanced physical vapor deposition or chemical manufacturing. 其中,增强型物理或者化学气相沉积的工艺系数包括温度、压力、功率都是可调的,其调整为形成良好粘附性的抗腐蚀涂层,也可选地形成抗腐蚀涂层为光滑或者粗糙表面,还可选地形成抗腐蚀层为单一或者多层结构。 Wherein an enhanced physical or chemical vapor deposition process coefficient include temperature, pressure, power is adjustable, it is adjusted to form a good adhesion corrosion resistant coating, optionally also corrosion-resistant coating is formed smooth or a rough surface, optionally also anti-corrosion layer is formed as a single layer or multilayer structure.

[0060] 进一步地,本发明还可以在涂覆了抗腐蚀涂层的绝缘窗口204之上执行再次处理步骤,以使得其使用寿命提高,成本降低。 The insulating window corrosion-resistant coating [0060] Further, the present invention can also be coated on top of step 204 performs the process again, so that its service life and reduce costs. 其中一个再次处理步骤为机械加工绝缘窗口204 表面。 Wherein the processing step is a re-machined surface of the insulating window 204. 再次处理步骤在使用过的绝缘窗口上执行,其中,该绝缘窗口204的表面在等离子体损坏过,或者其表面的涂层在等离子体刻蚀制程中的沉积物所重叠或者污染,因此执行了该再次处理的绝缘窗口204可以使用更长时间,其生产成本得到了降低。 Again the process steps used in performing the insulating window, wherein a surface of the insulating window 204 through the plasma damage, or it deposits the coating surface in a plasma etch process in the overlap or contamination, thus performs the the insulating window 204 again, the process can be used longer, the production cost has been reduced.

[0061] 进一步地,所述抗腐蚀涂层具有不同的表面特征,例如设定特定的表面粗糙度使得厚且致密的抗腐蚀涂层能够以良好的粘附力粘附于绝缘窗口之上。 [0061] Further, the corrosion-resistant coating having different surface characteristics, for example, set such that the specific surface roughness of the thick and dense corrosion resistant coating with good adhesion can be adhered to the window over the insulation. 上述进行了多层涂覆或者抛光得到的涂覆了抗腐蚀涂层的绝缘窗口的使用寿命也会得到相应地延长。 Above were coated with a multilayer coating or the life of the polishing obtained insulating window corrosion resistant coating layer obtained will be extended accordingly.

[0062] 下面将详细对热退火步骤及其技术效果进行介绍。 [0062] The following will describe the thermal annealing step and the technical effects are described. 参见图6,图6是根据本发明一个具体实施例的一种抗腐蚀的电感耦合型等离子体处理腔室的绝缘窗口的制造方法的热退火步骤的曲线原理示意图,其横坐标表示时间,纵坐标表示温度。 Referring to FIG. 6, FIG. 6 is a diagram illustrating the principle of a thermal annealing step according to the method for producing a graph of the insulating window inductively-coupled plasma processing chamber, a particular embodiment of one kind of embodiment of the present invention, corrosion resistance, which the abscissa represents time, the vertical axis represents the temperature. 如图所示,以氧化钇制成的电感耦合型等离子体处理腔室的绝缘窗口204为加工组件为例,首先将绝缘窗口204 送入热退火炉,在tl时间段内以2°C或者min的速度将绝缘窗口204的温度升高到400°C, 然后在接下来3小时时间内将绝缘窗口204保持在400°C,最后在t2时间段内以1°C或者min的速度将绝缘窗口204的温度降低到0。 As shown, insulating window inductively coupled plasma processing chamber 204 made of yttrium oxide processing component is, for example, an insulating window 204 into the first heat annealing furnace at 2 ° C in a period of time tl or min in an insulating window 204 is raised to a temperature of 400 ° C, and then within the next 3 hours to the insulating window 204 is maintained at 400 ° C, in the last period t2 to 1 ° C min of the speed or insulating the temperature of the window 204 is reduced to zero. 需要说明的是,tl和t2时间段在这里仅示意性地表示一段时间,tl和t2的具体数据也没有具体限定,只要将绝缘窗口204的温度升高或者降低的速度控制在一定范围内,并且最后达到最高温度或者降低到〇就可以了。 Incidentally, tl and t2 period here only schematically represents a period of time, tl and t2 specific data is not particularly limited as long as the temperature of the insulating window 204 is increased or decreased to control the speed within a certain range, and finally reach the highest temperature or reduced to a square on it.

[0063] 本领域技术人员应当理解,热退火步骤执行的具体参数要求,包括时间、最高温度、升温速度、降温速度等都由具体的材料及其层数来决定。 [0063] Those skilled in the art will appreciate, the specific parameters of the thermal annealing step is performed, comprising particular materials and by the time the number of layers, the maximum temperature, heating speed, cooling speed, etc. is determined. 图7是根据本发明一个具体实施例的一种抗腐蚀的电感耦合型等离子体处理腔室的绝缘窗口的制造方法的热退火步骤针对不同材料层的参数列表。 FIG 7 is a list of parameters for the different material layers in accordance with the manufacturing method of thermal annealing step insulating window inductively-coupled plasma processing chamber of one embodiment of a corrosion resistant particular embodiment of the present invention. 如图7示意的表格所示,当材料选择为阳极处理后的A1,要求其最后形成的厚度为75um,层数为1层时,热退火步骤需要保持在200°C达到4h。 FIG 7 schematically shown in the table, when the material is selected A1 after anodizing, requires a thickness of 75um which is finally formed, the number of layers one layer, thermal annealing step needs to be maintained to achieve 200 ° C 4h. 在执行热退火步骤之前其初始应力为3. 27GPa,在执行热退火步骤之后的后续应力为2. 71,其应力减小幅度达到17%。 Before performing a thermal annealing step which is the initial stress 3. 27GPa, stress after performing subsequent thermal annealing step is 2.71, which stress reduction rate reached 17%. 当材料选择为Al2O3,要求其最后形成的厚度为75um,层数为4层时, 热退火步骤需要保持在400°C达到3h。 When the material is selected Al2O3, required thickness of the final formed is 75um, the number of layers is four layers, thermal annealing step needs to be maintained to achieve 400 ° C 3h. 在执行热退火步骤之前其初始应力为3. 13GPa,在执行热退火步骤之后的后续应力为2. 24,其应力减小幅度达到28%。 Before performing a thermal annealing step which is the initial stress 3. 13GPa, stress after performing subsequent thermal annealing step is 2.24, the amplitude of the stress is reduced to 28%. 当材料选择为A1,要求其最后形成的厚度为90um,层数为2层时,热退火步骤需要保持在200°C达到4h。 When the material is selected A1, its final desired thickness of 90um is formed, the number of layers of two layers, thermal annealing step needs to be maintained to achieve 200 ° C 4h. 在执行热退火步骤之前其初始应力为I. 97GPa,在执行热退火步骤之后的后续应力为1. 71,其应力减小幅度达到13%。 Before performing a thermal annealing step which is the initial stress I. 97GPa, stress after performing subsequent thermal annealing step is 1.71, the amplitude of the stress is reduced to 13%. 当材料选择为Al,要求其最后形成的厚度为130um,层数为4层时,热退火步骤需要保持在200°C达到4h。 When the material is selected Al, its final required thickness is formed 130um, the number of layers is four layers, thermal annealing step needs to be maintained to achieve 200 ° C 4h. 在执行热退火步骤之前其初始应力为3. 82GPa,在执行热退火步骤之后的后续应力为2. 53,其应力减小幅度达到34%。 Before performing a thermal annealing step which is the initial stress 3. 82GPa, stress after performing subsequent thermal annealing step is 2.53, the amplitude of the stress is reduced to 34%. 由此可见,本发明方法提供的热退火步骤对各种材料的应力降低都具有显著效果,这说明了本发明的优越性。 Thus, the thermal annealing step method of the present invention provides various materials to reduce stress have a significant effect, which illustrates the advantages of the present invention.

[0064] 我们还通过布拉格原理分析了应力变化。 [0064] We also analyzed the stress change by the principle of Prague. 图8是布拉格原理示意图,如图8所示, 将利用本发明提供的绝缘窗口的制造方法制得的电感耦合型等离子体处理腔室的绝缘窗口204上的抗腐蚀层d2利用布拉格原理进行分析,具体地,从抗腐蚀层d2的上表面入射至少两个X光射线Sll和S21至抗腐蚀层d2的上表面和下表面,分别经过反射和衍射以后得到反射光线S12和衍射光线S22。 8 is a schematic Bragg principle, as shown, using anti-corrosion layer on the insulating window 204 inductively-coupled plasma processing chamber of the manufacturing methods available insulating window of the present invention provides d2 analyzed using the principles of Bragg 8 , in particular, from at least two X-ray Sll and S21 to the anti-corrosion layer d2 upper and lower surfaces of the anti-corrosion layer on the surface of incident d2, respectively, after reflection and diffraction obtained after the reflected light diffracted ray S12 and S22. 因此上表面的X光射线会发生反射,下表面的X光射线会发生衍射。 Thus the X-rays is reflected surface, the lower surface of the X-ray will be diffracted. 其中9为衍射角(布拉格角),X为X光波长,2d为晶面距,S=d*sin0。 9 wherein the diffraction angle (Bragg angle), X is the wavelength of X-rays, 2d is a crystal plane distance, S = d * sin0. 按照布拉格原理,若无应力存在,在不同倾角W(PSI)下,同一(hkl)晶面的2 0角、晶面距d 无变化。 According to the Bragg principle, the presence of absence of stress, at different inclinations W (PSI), the same (hkl) crystal plane angle 20, the crystal plane distance d unchanged. 若存在残余应力,在不同倾角W(PSI)下,同一(hkl)晶面的2 0角、晶面距d随倾角W的变化而变化。 If the residual stress at different inclinations W (the PSI), the same (hkl) crystal plane angle 20, the crystal plane distance d varies with the angle of inclination W. 若为拉应力,W越大,d越大。 If the tensile stress, W, the greater the d. 若为压应力,W越大,d越小。 If the compressive stress, the greater the W, the smaller d. 若为理想的平面应力状态,则有以下关系式: If an ideal plane stress state, there is the following relationship:

[0065] 〇=K•M [0065] square = K • M

Figure CN105088141AD00101

[0068] 其中,E为杨氏模量,E= 171. 5GPa。 [0068] wherein, E is Young's modulus, E = 171. 5GPa. V为泊松比,V= 0.298。 V is Poisson's ratio, V = 0.298. M为多个转交V条件下同一晶面2 0值的变化,下面进行直线拟合求斜率,斜率即为上述关系式的M。 M is transmitted to a plurality of variations on the same crystal plane V 20 value under conditions, following the slope of the linear fit method, is the slope of the relational equations M.

[0069] 图9示出了利用布拉格原理直线拟合求斜率M的曲线图,其横坐标表示Sin2nr,纵坐标为2 0,如图所示,得到其斜率M= 0.5614。 [0069] FIG. 9 illustrates the principle of Bragg linear fitting curve slope M of FIG request which abscissa indicates Sin2nr, the ordinate is 20, as shown, to obtain the slope M = 0.5614. 因此,可以得知,在不同倾角W(PSI)下, 同一(hkl)晶面的2 0角、晶面距d变化很小,因此说明本发明对应力降低具有显著效果。 Thus, it is possible that, at different inclinations W (PSI), the same (hkl) plane of the crystal 20 angle, small changes in the crystal plane distance d, the present invention thus described has a significant effect on reducing stress.

[0070] 尽管本发明的内容已经通过上述优选实施例作了详细介绍,但应当认识到上述的描述不应被认为是对本发明的限制。 [0070] While the present invention have been described in detail by the above preferred embodiments, it should be appreciated that the above description should not be construed as limiting the present invention. 在本领域技术人员阅读了上述内容后,对于本发明的多种修改和替代都将是显而易见的。 After the skilled artisan reading the foregoing, various modifications and alternatives to the present invention will be apparent. 因此,本发明的保护范围应由所附的权利要求来限定。 Accordingly, the scope of the invention be defined by the appended claims. 此外,不应将权利要求中的任何附图标记视为限制所涉及的权利要求;"包括"一词不排除其它权利要求或说明书中未列出的装置或步骤;"第一"、"第二"等词语仅用来表示名称,而并不表示任何特定的顺序。 Further, in the claims should not be considered as any reference numerals as claimed in claim limitations involved; "comprising" does not exclude other steps or apparatus as claimed in claim or the specification are not listed; "first," "second two "and other terms are only used to indicate the name, but does not indicate any particular sequence.

Claims (15)

  1. 1. 一种抗腐蚀的电感耦合型等离子体处理腔室的绝缘窗口,其特征在于:所述绝缘窗口上利用等离子体增强型物理或化学气相沉积在其面对等离子体的一面涂覆抗腐蚀涂层, 所述涂覆了抗腐蚀涂层的绝缘窗口进行了热处理步骤。 Insulating window inductively coupled plasma processing chamber 1. A corrosion-resistant, comprising: depositing a coating on one side thereof facing the plasma corrosion by plasma enhanced chemical or physical vapor on the insulating window coating, the coated corrosion-resistant coating insulating window of the heat treatment step.
  2. 2. 根据权利要求1所述的绝缘窗口,其特征在于:所述热处理步骤包括热退火处理。 2. The insulating window according to claim 1, wherein: said heat treatment step comprises a thermal annealing process.
  3. 3. 根据权利要求2所述的绝缘窗口,其特征在于:所述抗腐蚀层涂层的材料包括以下任一种或任多种:Y20 3、YF3、Er02、A1203、SiC、AIN、Zr0 2。 The insulating window according to claim 2, wherein: said anti-corrosion layer coating material comprises any one or more of any of the following: Y20 3, YF3, Er02, A1203, SiC, AIN, Zr0 2 .
  4. 4. 根据权利要求3所述的绝缘窗口,其特征在于:所述抗腐蚀涂层的厚度为大于40um。 The insulating window according to claim 3, wherein: said corrosion-resistant coating has a thickness greater than 40um.
  5. 5. 根据权利要求3所述的绝缘窗口,其特征在于:所述抗腐蚀层涂层具有多层结构。 The insulating window according to claim 3, wherein: said anti-corrosion layer coating having a multilayer structure.
  6. 6. 根据权利要求2所述的绝缘窗口,其特征在于:所述绝缘窗口的陶瓷基体为石英或者氧化铝。 The insulating window according to claim 2, wherein: said insulating ceramic matrix window is made of quartz or alumina.
  7. 7. -种抗腐蚀的电感耦合型等离子体处理腔室的绝缘窗口的制造方法,其特征在于, 所述制造方法包括如下步骤: 提供一绝缘窗口基体; 在所述绝缘窗口基体上利用增强型物理或者化学气相沉积在其面对等离子体的一面涂覆一层抗腐蚀涂层; 然后对涂覆了抗腐蚀涂层的绝缘窗口执行热处理步骤。 7. - A method for producing an insulating window inductively-coupled plasma processing chamber corrosion resistant species, wherein, the method comprising the steps of: providing a window insulating substrate; with enhanced window on said insulating substrate physical or chemical vapor deposition in a layer coated on one side thereof facing the plasma corrosion resistant coating; then coated with an insulating window, the heat treatment step performed in the corrosion resistant coating.
  8. 8. 根据权利要求7所述的制造方法,其特征在于:所述热处理步骤包括热退火处理。 8. The method according to claim 7, wherein: said heat treatment step comprises a thermal annealing process.
  9. 9. 根据权利要求8所述的制造方法,其特征在于,所述制造方法还包括如下步骤:对绝缘窗口曝露于等离子体的一面进行粗糙化处理步骤,然后在所述绝缘窗口基体上利用增强型物理或者化学气相沉积在其面对等离子体的一面涂覆一层抗腐蚀涂层。 9. The method according to claim 8, characterized in that, the method further comprising the step of: insulating window of the plasma exposed to one surface roughening treatment step, and then using the window on the insulating base enhanced type of physical or chemical vapor deposition in a layer coated on one side thereof facing the plasma corrosion resistant coating.
  10. 10. 根据权利要求9所述的制造方法,其特征在于:所述粗糙化处理使得绝缘窗口的表面粗糙度小于〇• 5um。 10. The method according to claim 9, wherein: the roughened surface of the insulating window so that the treatment is less than the square roughness • 5um.
  11. 11. 根据权利要求9所述的制造方法,其特征在于:所述粗糙化处理使得绝缘窗口的表面粗糙度大于2um。 11. The method according to claim 9, wherein: the roughened surface roughness of the treatment so that the insulating window is greater than 2um.
  12. 12. 根据权利要求8所述的制造方法,其特征在于,当所述抗腐蚀涂层具有多层结构时,所述制造方法还包括如下步骤:在对涂覆了抗腐蚀涂层的绝缘窗口执行热退火处理步骤之后,对绝缘窗口之上的多层结构的抗腐蚀涂层进行表面抛光或者研磨处理。 12. The method according to claim 8, wherein, when the corrosion-resistant coating having a multilayer structure, the method further comprising the step of: the window in the insulating coating of the corrosion-resistant coated after performing a thermal annealing step of the multilayer structure of the corrosion-resistant coating on the surface of the insulating window polishing or grinding treatment.
  13. 13. 根据权利要求8所述的制造方法,其特征在于:利用增强型物理或者化学气相沉积制造抗腐蚀涂层的温度取值范围为高于室温。 13. A method according to claim 8, characterized in that: the use of enhanced physical or chemical vapor deposition for producing corrosion-resistant coating temperature range is above room temperature.
  14. 14. 根据权利要求8所述的制造方法,其特征在于:所述抗腐蚀涂层的厚度为大于40um〇 14. A method according to claim 8, wherein: said corrosion-resistant coating has a thickness of greater than 40um〇
  15. 15. 根据权利要求8所述的制造方法,其特征在于:当所述抗腐蚀涂层具有多层结构时,其多层结构中的每一层单层结构的厚度取值范围为〇• Ium到30um,多层结构的数目能够达到1到100层。 15. A method according to claim 8, wherein: when the corrosion-resistant coating having a multilayer structure, the thickness of each layer ranges from single-layer structure in which a multilayer structure is square • Ium to 30um, the multilayer structure can reach the number of 1 to 100 layers.
CN 201410222472 2014-05-23 2014-05-23 Inductive coupling type plasma processing chamber, anti-corrosion insulation window of inductive coupling type plasma processing chamber and manufacturing method of anti-corrosion insulation window CN105088141A (en)

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CN106937474A (en) * 2015-12-31 2017-07-07 中微半导体设备(上海)有限公司 Inductively-coupled plasma processor
KR101885570B1 (en) * 2016-07-05 2018-08-07 세메스 주식회사 Window member, method for manufacturing the same, and substrate treatment apparatus comprising the same

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JPH0594950A (en) * 1990-12-11 1993-04-16 Lam Res Corp Design of reaction chamber and method for minimizing generation of particle in chemical vapor deposition reaction equipment
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CN106937474A (en) * 2015-12-31 2017-07-07 中微半导体设备(上海)有限公司 Inductively-coupled plasma processor
KR101885570B1 (en) * 2016-07-05 2018-08-07 세메스 주식회사 Window member, method for manufacturing the same, and substrate treatment apparatus comprising the same

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