CN105024651A - Radio frequency power amplifier and method for improving power added efficiency and linearity - Google Patents

Radio frequency power amplifier and method for improving power added efficiency and linearity Download PDF

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Publication number
CN105024651A
CN105024651A CN201410178942.9A CN201410178942A CN105024651A CN 105024651 A CN105024651 A CN 105024651A CN 201410178942 A CN201410178942 A CN 201410178942A CN 105024651 A CN105024651 A CN 105024651A
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inductance
electrically connected
impedance
power
value
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CN201410178942.9A
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CN105024651B (en
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王柏之
杨雅雯
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Realtek Semiconductor Corp
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Realtek Semiconductor Corp
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Abstract

The invention provides a radio frequency power amplifier. The radio frequency power amplifier comprises an impedance-transformation circuit, a current unit gain amplifier and an output matching circuit. The impedance-switching circuit receives a first input power signal and correspondingly outputs a second input power signal, wherein the impedance-transformation circuit is used for transforming the input impedance of the current unit gain amplifier to the output impedance of a pre-stage circuit according to an impedance matching parameter so as to improve the power added efficiency of the pre-stage circuit. The current unit gain amplifier provides linear transresistance so as to linearly transmit input current to output impedance to generate linear output power so as to improve the power added efficiency of the current unit gain amplifier, wherein the impedance matching parameter is determined according to a first system voltage, a second system voltage and a preset power gain value.

Description

Radio-frequency power amplifier and the method improving power added efficiency and the linearity
Technical field
The present invention relates to a kind of radio-frequency power amplifier, particularly a kind ofly can promote the power added efficiency of front stage circuits and the radio-frequency power amplifier framework of this power amplifier of linearisation.
Background technology
In communication system, because the mode of modulation signal is different, the specification of therefore required power transmitter is also not identical.In recent years, cordless communication network, such as meet the communication network of IEEE802.11a/b/g specification, its OFDM used (Orthogonal frequency-division multiplexing, OFDM) modulation signal is similar to amplitude modulation (Amplitude Modulation, AM) modulation system, therefore it needs the power amplifier of high linearity.Generally speaking, the power amplifier of high linearity is all to improve the linearity with the common-source configuration power amplifier of classification A (Class A) or classification AB (Class AB).But in order to improve communication quality, the linearity improving power amplifier is further necessary with the power added benefit of enhancement.
Summary of the invention
The embodiment of the present invention provides a kind of radio-frequency power amplifier, is electrically connected front stage circuits to receive the first input power signal.Radio-frequency power amplifier comprises impedance inverter circuit, current unit gain amplifier and output matching circuit.Impedance inverter circuit is electrically connected front stage circuits, described impedance inverter circuit receives the first input power signal and exports the second input power signal accordingly, wherein impedance inverter circuit carries out power match by impedance transformation, by this to promote power added efficiency and the linearity of this radio-frequency power amplifier.Current unit gain amplifier is electrically connected impedance inverter circuit, described current unit gain amplifier receives the second input power signal and exports a power output signal accordingly, and current unit gain amplifier decides predetermined power yield value according to impedance reference value, wherein the input impedance of current unit gain amplifier is made to equal in fact the input impedance of radio-frequency power amplifier by impedance inverter circuit.Output matching circuit is electrically connected current unit gain amplifier, and described output matching circuit has impedance reference value and in order to received power output signal is carried out power match, and exports radio frequency output signal accordingly.
The embodiment of the present invention separately provides a kind of method improving power added efficiency and the linearity, and it is for a radio-frequency power amplifier.Radio-frequency power amplifier is electrically connected front stage circuits to receive the first input power signal, and radio-frequency power amplifier comprises impedance inverter circuit, current unit gain amplifier and output matching circuit.Impedance inverter circuit is electrically connected front stage circuits and the first system voltage, current unit gain amplifier is electrically connected impedance inverter circuit and second system voltage, output matching circuit is electrically connected current unit gain amplifier, the method wherein improving power added efficiency comprises the following steps: receive the first input power signal by impedance inverter circuit and export the second input power signal accordingly, wherein impedance inverter circuit carries out power match by impedance transformation, by this to promote power added efficiency and the linearity of radio-frequency power amplifier; Receive the second input power signal by current unit gain amplifier and export a power output signal accordingly, and current unit gain amplifier decides predetermined power yield value according to impedance reference value, wherein the input impedance of current unit gain amplifier is made to equal in fact the input impedance of radio-frequency power amplifier by impedance inverter circuit; And by output matching circuit in order to received power output signal is carried out power match, and export radio frequency output signal accordingly, wherein output matching circuit has impedance reference value.
In sum, the radio-frequency power amplifier that the embodiment of the present invention proposes and the method improving power added efficiency, according to impedance matching parameter, input impedance can be converted to output impedance by impedance inverter circuit, the power added efficiency and the linearity that promote radio-frequency power amplifier when fixing input power can be made by this.
Further understand feature of the present invention and technology contents for enable, refer to following detailed description for the present invention and accompanying drawing, but these illustrate and Figure of description is only used to the present invention is described, but not any restriction is done to interest field of the present invention.
Accompanying drawing explanation
Fig. 1 is the module diagram of radio-frequency power amplifier illustrated according to an exemplary embodiment of the present.
The module diagram of radio-frequency power amplifier of Fig. 2 for illustrating according to another embodiment exemplifying.
The module diagram of radio-frequency power amplifier of Fig. 3 for illustrating according to exemplifying another embodiment.
The module diagram of radio-frequency power amplifier of Fig. 4 for illustrating according to exemplifying another embodiment.
Fig. 5 is the flow chart of the method for raising power added efficiency illustrated according to an exemplary embodiment of the present.
Description of reference numerals:
100,200,300,400: radio-frequency power amplifier
101: front stage circuits
102: antenna
110: impedance inverter circuit
120: current unit gain amplifier
130: output matching circuit
C1: the first electric capacity
C2: the second electric capacity
GND: earthed voltage
FL1: the first direct current feed-in inductance
FL2: the second direct current feed-in inductance
FL3: the three direct current feed-in inductance
L1, L2, L3, L4, L5, L6, L7, L8, L9, L10: inductance
MT1, MT2, MT3, MT4, MT5: transistor
PI1: the first input power signal
PI2: the second input power signal
POUT: power output signal
RFOUT: radio frequency output signal
Rid: differential input resistance
Vb1, Vb2: bias voltage
VDD1: the first system voltage
VDD2: second system voltage
VRB: reference bias voltage
S510, S520, S530: step
Embodiment
Hereafter various exemplary embodiment will be described more fully referring to Figure of description, in Figure of description, show some exemplary embodiments.But concept of the present invention may embody in many different forms, and should not be construed as and be limited to set forth exemplary embodiment herein.Specifically, these exemplary embodiments are provided to make the present invention for detailed and complete, and will will fully pass on the category of concept of the present invention to those who familiarize themselves with the technology.All graphic in, can in order to clear and lavish praise on oneself size and the relative size in Ceng Ji district.Similar numeral indicates like all the time.
Although should be understood that and term first, second, third, etc. may be used herein to describe various element, these elements should not limit by these terms.These terms are distinguish an element and another element.Therefore, the first element hereafter discussed can be described as the second element and does not depart from the teaching of concept of the present invention.As used herein, term " and/or " comprise all combinations listing any one and one or many person in project be associated.
Below will coordinate with various embodiments and graphic described radio-frequency power amplifier is described, but following embodiment is not in order to limit the present invention.
(embodiment of radio-frequency power amplifier)
Please refer to Fig. 1, Fig. 1 is the module diagram of radio-frequency power amplifier illustrated according to an exemplary embodiment of the present.As shown in Figure 1, radio-frequency power amplifier 100 comprises impedance inverter circuit 110, current unit gain amplifier 120 and output matching circuit 130.Impedance inverter circuit 110 is electrically connected front stage circuits 101 and the first system voltage VDD1, current unit gain amplifier 120 are electrically connected impedance inverter circuit 110 and second system voltage VDD2, output matching circuit 130 are electrically connected current unit gain amplifier 120, and output matching circuit 130 is electrically connected antenna 102.In the present embodiment, the form of antenna 120 is not in order to limit present disclosure.
About impedance inverter circuit 110, impedance inverter circuit 110 is in order to receive the first input power signal PI1 and to export the second input power signal PI2 by magnetic energy transition effects (that is mutual inductance effect) accordingly according to impedance matching parameter.Moreover, impedance inverter circuit carries out power match by impedance transformation, that is high input impedance is converted into low output impedance or low input impedance is converted into high output impedance to reach the effect of power match, by this with adjustment or the power added efficiency (Power Added Efficiency, PAE) and the linearity (linearity) that promote radio-frequency power amplifier further.
About current unit gain amplifier 120, current unit gain amplifier 120 is in order to receive the second input power signal PI2 and to export described power output signal POUT accordingly, and current unit gain amplifier 120 decides predetermined power yield value according to impedance reference value, wherein the input impedance of current unit gain amplifier 120 is made to equal in fact the input impedance of radio-frequency power amplifier 100 by impedance inverter circuit 110.Furthermore, in the present embodiment, designer can carry out numerical Design according to practical application request to predetermined power yield value, and designs corresponding impedance reference value by predetermined power yield value, and wherein impedance reference value is the input impedance of input matching circuit 130.Moreover impedance matching parameter decides according to the first system voltage VDD1, second system voltage VDD2 and predetermined power yield value.
About output matching circuit 130, output matching circuit 130 in order to received power output signal POUT is carried out power match to provide preferably power match usefulness, and exports radio frequency output signal RFOUT accordingly.
Next will illustrate, be the operation principle further illustrating radio-frequency power amplifier 100.
Because the turning of current unit gain amplifier 120 of present disclosure hinders (transimpedance) for having high linearity, and then make its power output be linear relative to the ratio of input current, if the output current of front stage circuits 101 is linear current, the object that this circuit is high linearity power amplifier can be reached, because its power gain of current unit gain amplifier 120 (power gain) is a finite value, therefore under fixed antenna through-put power condition, the power output of front stage circuits 101 can reduce, the ratio reduction that the power consumption making it consume is shared in the entire system, therefore linear current can be produced for electric current unity gain amplifier 120 increasing not significantly in system power dissipation situation.Moreover, impedance inverter circuit 110 is electrically connected between current unit gain amplifier 120 and front stage circuits 101 by present disclosure, by this to amplify the electric current that front stage circuits 101 exports via the magnetic energy transition effects in impedance inverter circuit 110, and then improve the power added efficiency (Power Added Efficiency, PAE) of radio-frequency power amplifier 100.Specifically, when impedance inverter circuit 110 receives the electric current or the first input power signal PI1 that front stage circuits 101 transmits, impedance inverter circuit 110 can utilize magnetic energy transition effects to carry out impedance transformation (high impedance is to Low ESR or Low ESR to high impedance); That is the first input power signal PI1 can be converted to the second input power signal PI2 according to impedance matching parameter by impedance inverter circuit 110.It is worth mentioning that, in this disclosure, impedance matching parameter can be decided by the first system voltage VDD1, second system voltage VDD2 and predetermined power yield value, and wherein system voltage VDD1, VDD2 and predetermined power yield value can be set according to practical application request by designer.In other words, impedance matching parameter can be set according to practical application request by designer, and impedance matching parameter directly has influence on the conversion usefulness of impedance inverter circuit 110, and then can have influence on the usefulness of the PAE adjusting front stage circuits 101.
Next, current unit gain amplifier 120 receives the electric current or the second input power signal PI2 that are transmitted by impedance inverter circuit 110.Because current unit gain amplifier 120 equals 1 in fact, so present disclosure is analyzed from power perspective current unit gain amplifier 120 for the multiplication factor of electric current.The power gain (that is predetermined power yield value) of current unit gain amplifier 120 is proportional to impedance reference value (that is input impedance of output matching circuit 130), so designer can set desired predetermined power yield value, then obtain impedance reference value by predetermined power yield value.It is worth mentioning that, in one embodiment, designer can carry out design optimization by above-mentioned setting value, but the present embodiment is not in this, as restriction.
Afterwards, current unit gain amplifier 120 transmits power output signal POUT to output matching circuit 130 to carry out the power match of output, and radio frequency output signal RFOUT can be sent to antenna 102 to transmit by output matching circuit 130 accordingly.
In order to illustrate in greater detail the operation workflow of radio-frequency power amplifier 100 of the present invention, one of be at least further described in multiple embodiment below.
In ensuing multiple embodiment, the part being different from above-mentioned Fig. 1 embodiment will be described, and all the other clippeds are identical with the part of above-mentioned Fig. 1 embodiment.In addition, for illustrating for the purpose of facility, similar reference number or label indicate similar element.
(another embodiment of radio-frequency power amplifier)
Please refer to Fig. 2, the module diagram of radio-frequency power amplifier of Fig. 2 for illustrating according to another embodiment exemplifying.As shown in Figure 2, with above-mentioned Fig. 1 embodiment unlike, comprise the first inductance L 1 and the second inductance L 2 at the impedance inverter circuit 110 of the present embodiment.Current unit gain amplifier 120 comprises the first transistor MT1 and the first direct current feed-in inductance FL1.One end of first inductance L 1 is electrically connected front stage circuits 101 to receive the first input power signal PI1, and the other end of the first inductance L 1 is electrically connected the first system voltage VDD1, and wherein the first inductance L 1 has the first inductance value.One end of second inductance L 2 is electrically connected current unit gain amplifier 120 and exports the second input power signal PI2, and the other end of the second inductance L 2 is electrically connected earthed voltage GND, and wherein the second inductance L 2 has the second inductance value.The source electrode of the first transistor MT1 is electrically connected one end of the second inductance L 2 to receive the second input power signal PI2, and the grid of the first transistor MT1 is electrically connected reference bias voltage VRB, that is AC earth (AC ground).One end of first direct current feed-in inductance FL1 is electrically connected the drain electrode of the first transistor MT1 and output matching circuit 130 and exports described power output signal POUT, the other end of the first direct current feed-in inductance FL1 is electrically connected second system voltage VDD2, and wherein the first direct current feed-in inductance FL1 has the first direct current feed-in inductance value.
Next will describe, be the operation principle further illustrating radio-frequency power amplifier 200.
In the present embodiment, because the first transistor MT1 is common gate (Common Gate, CG) configuration, so the resistance (transimpedance) that turns of the first transistor MT1 be linearly and power gain (power gain) is finite value.Therefore, the impedance inverter circuit 110 with the first inductance L 1 and the second inductance L 2 is electrically connected between front stage circuits 101 and the first transistor MT1 by the present embodiment, by this to be amplified the electric current that front stage circuits 101 exports by the magnetic energy transition effects of the first inductance L 1 and the second inductance L 2, and then improve the power added efficiency (PAE) of front stage circuits 101.Specifically, when the first inductance L 1 receives the electric current or the first input power signal PI1 that front stage circuits 101 transmits, energy can be sent to the second inductance L 2 by magnetic energy transition effects (mutual inductance effect) by the first inductance L 1, and the ratio wherein flowed through between the electric current of the second inductance L 2 and the electric current flowing through the first inductance L 1 is impedance matching parameter.It is noted that, impedance matching parameter is defined as the ratio between the first inductance value and the second inductance value, and when impedance matching parameter is determined according to the first system voltage VDD1, second system voltage VDD2 and predetermined power yield value, then designer can decide between the first inductance value and the second inductance value by impedance matching parameter ratio, by this to adjust the power added efficiency (PAE) of front stage circuits 101.
Next, electric current or the second input power signal PI2 can be sent to the first transistor MT1 by the second inductance L 2, and wherein the first input power signal PI1 can be converted to the second input power signal PI2 according to impedance matching parameter by the first inductance L 1 and the second inductance L 2.Because the first transistor MT1 (common gate configuration) equals 1 in fact, so present disclosure is analyzed from power perspective the first transistor MT1 for the multiplication factor of electric current.The power gain (that is predetermined power yield value) of the first transistor MT1 equals the product of the resistance of the input resistance of input matching circuit 130 and transduction (transconductance) value of transistor MT1, so designer can set the power output of desired predetermined antenna, and then tried to achieve the resistance of the input resistance of input matching circuit 130 by second system voltage VDD2, then obtain the transduction of transistor MT1 by the desired predetermined power yield value of designer.The impedance matching parameter of impedance inverter circuit 110 is then by the first system voltage VDD1, the power output (power gain of antenna delivering power deduction transistor MT1, in units of dB) provided needed for the transduction of transistor MT1 and front stage circuits 101 decides.Similarly, designer can carry out design optimization by above-mentioned setting value, but the present embodiment is not in this, as restriction.
In order to illustrate in greater detail the operation workflow of radio-frequency power amplifier 200 of the present invention, one of be at least further described in multiple embodiment below.
In ensuing multiple embodiment, the part being different from above-mentioned Fig. 2 embodiment will be described, and all the other clippeds are identical with the part of above-mentioned Fig. 2 embodiment.In addition, for illustrating for the purpose of facility, similar reference number or label indicate similar element.
(embodiment again of radio-frequency power amplifier)
Please refer to Fig. 3, the module diagram of radio-frequency power amplifier of Fig. 3 for illustrating according to an exemplifying embodiment again.As shown in Figure 3, with above-mentioned Fig. 2 embodiment unlike, impedance inverter circuit 110 comprises the 3rd inductance L 3, the 4th inductance L 4, the 5th inductance L 5 and the 6th inductance L 6.Current unit gain amplifier 120 comprises transistor seconds MT2, third transistor MT3, the second direct current feed-in inductance FL2, the 4th transistor MT4, the 5th transistor MT5 and the 3rd direct current feed-in inductance FL3.
One end of 3rd inductance L 3 is electrically connected front stage circuits 101 to receive the first input power signal PI1, and the other end of the 3rd inductance L 3 is electrically connected the first system voltage VDD1, and wherein the 3rd inductance L 3 has the 3rd inductance value.One end of 4th inductance L 4 is electrically connected current unit gain amplifier 120 and exports the second input power signal PI2, the other end of the 4th inductance L 4 is electrically connected earthed voltage GND, and the 4th inductance L 4 has the 4th inductance value, the ratio wherein between the 3rd inductance value and the 4th inductance value is defined as bridge impedance matching parameter on first.One end of 5th inductance L 5 is electrically connected front stage circuits 101 to receive the first input power signal PI1, and the other end of the 5th inductance L 5 is electrically connected the first system voltage VDD1, and wherein the 5th inductance L 5 has the 5th inductance value.One end of 6th inductance L 6 is electrically connected current unit gain amplifier 120 to export the second input power signal PI2, the other end of the 6th inductance L 6 is electrically connected earthed voltage GND, and the 6th inductance L 6 has the 6th inductance value, the ratio wherein between the 5th inductance value and the 6th inductance value is defined as first time bridge impedance matching parameter.The source electrode of transistor seconds MT2 is electrically connected one end of the 4th inductance L 4 to receive the second input power signal PI2, and the grid of transistor seconds MT2 receives the first bias voltage Vb1.The source electrode of third transistor MT3 is electrically connected the drain electrode of transistor seconds MT2, and the grid of third transistor MT3 receives the second bias voltage Vb2, and wherein third transistor MT3 is high voltage device.The drain electrode that one end of second direct current feed-in inductance FL2 is electrically connected third transistor MT3 is with output matching circuit 130 and export described power output signal POUT, the other end electric connection second system voltage VDD2 of the second direct current feed-in inductance FL2.The source electrode of the 4th transistor MT4 is electrically connected the other end of the 6th inductance L 6 to receive the second input power signal PI2, and the grid of the 4th transistor MT4 receives the first bias voltage Vb1.The source electrode of the 5th transistor MT5 is electrically connected the drain electrode of the 4th transistor, and the grid of the 5th transistor MT5 receives the second bias voltage Vb2, and wherein the 5th transistor MT5 is high voltage device.The drain electrode that one end of 3rd direct current feed-in inductance FL3 is electrically connected the 5th transistor MT5 is with output matching circuit 130 and export described power output signal POUT, and the other end of the 3rd direct current feed-in inductance FL3 electric connection second system voltage VDD2.
Next will describe, be the operation principle further illustrating radio-frequency power amplifier 300.
In the present embodiment, when current unit gain amplifier 120 receives AC signal, bias voltage Vb1 and Vb2 can by AC earth (AC ground); That is transistor MT2, MT3, MT4 and MT5 grid can be considered and be electrically connected to earthed voltage.Due to, transistor MT2, MT3, MT4 and MT5 are common gate configuration, so transistor MT2, MT3, MT4 and MT5 turn resistance for linear and power gain (power gain) is finite value, wherein transistor MT2 is identical in fact with transistor MT4 and transistor MT3 and transistor MT5 is identical in fact.Therefore, in the present embodiment, by have inductance L 3, L4, L5 and L6 impedance inverter circuit 110 be electrically connected between front stage circuits 101 and current unit gain circuitry 120, by this to be changed the electric current that front stage circuits 101 exports by the magnetic energy transition effects of inductance L 3, L4, L5 and L6, and then improve the power added efficiency (PAE) of front stage circuits 101, wherein inductance L 3 is identical in fact with inductance L 5, and inductance L 4 is identical in fact with inductance L 6.Before being described below, what must first illustrate is, the signal that front stage circuits 101 exports is differential input signals (Differential input signal), and therefore the internal circuit of radio-frequency power amplifier 300 receives differential input signals for using differential circuit framework.Moreover the input impedance of the output matching circuit 130 shown in Fig. 3 is a differential input resistance Rid.Specifically, when the 3rd inductance L 3 receives the electric current or the first input power signal PI1 that front stage circuits 101 transmits, energy can be sent to the 4th inductance L 4 by magnetic energy transition effects by the 3rd inductance L 3, the ratio wherein flowed through between the electric current of the 4th inductance L 4 and the electric current flowing through the 3rd inductance L 3 is bridge impedance matching parameter on first, and on first, bridge impedance matching parameter is defined as the ratio between the 3rd inductance value and the 4th inductance value.It is worth mentioning that, 3rd inductance L 3 and the 4th inductance L 4 according to bridge impedance matching parameter on first input impedance is converted to output impedance and on first bridge impedance matching parameter according to when on the first system voltage VDD1, second system voltage VDD2 and first, bridge predetermined power yield value is determined, then designer can decide between the 3rd inductance value and the 4th inductance value by bridge impedance matching parameter on first ratio, by this to improve the power added efficiency (PAE) of radio-frequency power amplifier 300.
Next, differential current or the second input power signal PI2 can be sent to transistor MT2 and MT3 by the 4th inductance L 4, and wherein the first input power signal PI1 can be converted to the second input power signal PI2 according to bridge impedance matching parameter on first by the 3rd inductance L 3 and the 4th inductance L 4.Because transistor MT2 and MT3 (common gate configuration) equals 1 in fact, so present disclosure is analyzed from power perspective transistor MT2 and MT3 for the multiplication factor of electric current.The power gain of transistor seconds MT2 and third transistor MT3 (that is on first bridge predetermined power yield value) equals the product of the half resistance of differential input resistance Rid and transduction (transconductance) value of transistor MT2, so designer can set the power output of desired predetermined antenna, and then tried to achieve the resistance of differential input resistance Rid by second system voltage VDD2, then obtain the transduction of transistor MT2 by the desired predetermined power yield value of designer.Impedance inverter circuit 110 first on the power output (antenna delivering power deducts the power gain of radio-frequency power amplifier 300) that then provides needed for the transduction of the first system voltage VDD1, transistor MT2 and front stage circuits 101 of bridge impedance matching parameter decide.Similarly, designer can carry out design optimization by above-mentioned setting value, but the present embodiment is not in this, as restriction.In other words, transistor seconds MT2 and third transistor MT3 decides bridge predetermined power yield value on first according to the half resistance of differential input resistance Rid, and the power gain of transistor MT2 and MT3 (that is on first bridge predetermined power yield value) is proportional to the resistance of differential input resistance Rid, so designer can set bridge predetermined power yield value on desired first, then obtained the resistance of differential input resistance Rid by bridge predetermined power yield value on first.On first, bridge impedance matching parameter is according to when on the first system voltage VDD1, second system voltage VDD2 and first, bridge predetermined power yield value is determined, then decide the ratio between the 3rd inductance value and the 4th inductance value by bridge impedance matching parameter on first.
Afterwards, similarly, third transistor MT3 can transmit power output signal POUT to output matching circuit 130 to carry out the power match of output, and radio frequency output signal RFOUT can be sent to antenna 102 to transmit by output matching circuit 130 accordingly.
On the other hand, when the 5th inductance L 5 receives the electric current or the first input power signal PI1 that front stage circuits 101 transmits, energy can be sent to the 6th inductance L 6 by magnetic energy transition effects by the 5th inductance L 5, the ratio wherein flowed through between the electric current of the 6th inductance L 6 and the electric current flowing through the 5th inductance L 5 is first time bridge impedance matching parameter, and first time bridge impedance matching parameter is defined as the ratio between the 5th inductance value and the 6th inductance value.It is worth mentioning that, input impedance is converted to output impedance according to first time bridge impedance matching parameter and when first time bridge impedance matching parameter is determined according to the first system voltage VDD1, second system voltage VDD2 and first time bridge predetermined power yield value by the 5th inductance L 5 and the 6th inductance L 6, then designer can decide between the 5th inductance value and the 6th inductance value by first time bridge impedance matching parameter ratio, by this to improve the power added efficiency (PAE) of radio-frequency power amplifier 300.
Next, differential current or the second input power signal PI2 can be sent to transistor MT4 and MT5 by the 6th inductance L 4, and wherein the first input power signal PI1 can be converted to the second input power signal PI2 according to first time bridge impedance matching parameter by the 5th inductance L 5 and the 6th inductance L 6.Similarly, because transistor MT4 and MT5 (common gate configuration) equals 1 in fact, so present disclosure is analyzed from power perspective transistor MT4 and MT5 for the multiplication factor of electric current.The power gain (that is first time bridge predetermined power yield value) of the 4th transistor MT4 and the 5th transistor MT5 equals the product of the half resistance of differential input resistance Rid and transduction (transconductance) value of transistor MT4, so designer can set the power output of desired predetermined antenna, and then tried to achieve the resistance of differential input resistance Rid by second system voltage VDD2, then obtain the transduction of transistor MT4 by the desired predetermined power yield value of designer.First time bridge impedance matching parameter of impedance inverter circuit 110 is then by the first system voltage VDD1, the power output (antenna delivering power deducts the power gain of radio-frequency power amplifier 300) provided needed for the transduction of transistor MT2 and front stage circuits 101 decides. similarly, designer can carry out design optimization by above-mentioned setting value, but the present embodiment is not in this, as restriction.In other words, 4th transistor MT4 and the 5th transistor MT5 decides first time bridge predetermined power yield value according to the half resistance of differential input resistance Rid, and the power gain of transistor MT4 and MT5 (that is first time bridge predetermined power yield value) is proportional to the resistance of differential input resistance Rid, so designer can set desired first time bridge predetermined power yield value, then obtained the resistance of differential input resistance Rid by first time bridge predetermined power yield value.When first time bridge impedance matching parameter is determined according to the first system voltage VDD1, second system voltage VDD2 and first time bridge predetermined power yield value, then decide the ratio between the 5th inductance value and the 6th inductance value by first time bridge impedance matching parameter.
In order to illustrate in greater detail the operation workflow of radio-frequency power amplifier 300 of the present invention, one of be at least further described in multiple embodiment below.
In ensuing multiple embodiment, the part being different from above-mentioned Fig. 3 embodiment will be described, and all the other clippeds are identical with the part of above-mentioned Fig. 3 embodiment.In addition, for illustrating for the purpose of facility, similar reference number or label indicate similar element.
(a more embodiment of radio-frequency power amplifier)
Please refer to Fig. 4, the module diagram of radio-frequency power amplifier of Fig. 4 for illustrating according to an exemplifying more embodiment.As shown in Figure 4, with above-mentioned Fig. 3 embodiment unlike, impedance inverter circuit 110 comprises the 7th inductance L 7, the 8th inductance L 8, the 9th inductance L 9, the tenth inductance L 10, first electric capacity C1 and the second electric capacity C2.One end of 7th inductance L 7 is electrically connected front stage circuits 101 to receive the first input power signal PI1, and the other end of the 7th inductance L 7 is electrically connected the first system voltage VDD1, and the 7th inductance L 7 has the 7th inductance value.One end of first electric capacity C1 is electrically connected one end of the 7th inductance L 7.One end of 8th inductance L 8 is electrically connected the other end of the first electric capacity C1 and exports the second input power signal PI2, the other end of the 8th inductance L 8 is electrically connected earthed voltage GND, 8th inductance L 8 has the 8th inductance value, and the ratio wherein between the 7th inductance value and the 8th inductance value is defined as bridge impedance matching parameter on second.One end of 9th inductance L 9 is electrically connected front stage circuits 101 to receive the first input power signal PI2, and the other end of the 9th inductance L 9 is electrically connected the first system voltage VDD1, and the 9th inductance L 9 has the 9th inductance value.One end of second electric capacity C2 is electrically connected one end of the 9th inductance L 9.One end of tenth inductance L 10 is electrically connected the other end of the second electric capacity C2 to export the second input power signal PI2, the other end of the tenth inductance L 10 is electrically connected earthed voltage GND, described tenth inductance L 10 has the tenth inductance value, and the ratio wherein between the 9th inductance value and the tenth inductance value is defined as second time bridge impedance matching parameter.
When the 3rd inductance L 3 receives the electric current or the first input power signal PI1 that front stage circuits 101 transmits, energy can be sent to the 4th inductance L 4 by magnetic energy transition effects by the 3rd inductance L 3, the ratio wherein flowed through between the electric current of the 4th inductance L 4 and the electric current flowing through the 3rd inductance L 3 is bridge impedance matching parameter on first, and on first, bridge impedance matching parameter is defined as the ratio between the 3rd inductance value and the 4th inductance value.It is worth mentioning that, 3rd inductance L 3 and the 4th inductance L 4 according to bridge impedance matching parameter on first input impedance is converted to output impedance and on first bridge impedance matching parameter according to when on the first system voltage VDD1, second system voltage VDD2 and first, bridge predetermined power yield value is determined, then designer can decide between the 3rd inductance value and the 4th inductance value by bridge impedance matching parameter on first ratio, by this to improve the power added efficiency (PAE) of radio-frequency power amplifier 300.
Next, when the 7th inductance L 7 receives the electric current or the first input power signal PI1 that front stage circuits 101 transmits, energy can be sent to the 8th inductance L 8 by the first electric capacity C1 by the 7th inductance L 7, the ratio wherein flowed through between the electric current of the 8th inductance L 8 and the electric current flowing through the 7th inductance L 3 is bridge impedance matching parameter on second, and on second, bridge impedance matching parameter is defined as the ratio between the 7th inductance value and the 8th inductance value.It is worth mentioning that, 7th inductance L 8 and the 8th inductance L 8 according to bridge impedance matching parameter on second input impedance is converted to output impedance and on second bridge impedance matching parameter according to when on the first system voltage VDD1, second system voltage VDD2 and second, bridge predetermined power yield value is determined, then designer can decide between the 3rd inductance value and the 4th inductance value by bridge impedance matching parameter on second ratio, by this to improve the power added efficiency (PAE) of radio-frequency power amplifier 400.On the other hand, when the 9th inductance L 9 receives the electric current or the first input power signal PI1 that front stage circuits 101 transmits, energy can be sent to the tenth inductance L 10 by the second electric capacity C2 by the 9th inductance L 9, the ratio wherein flowed through between the electric current of the tenth inductance L 10 and the electric current flowing through the 9th inductance L 9 is second time bridge impedance matching parameter, and second time bridge impedance matching parameter is defined as the ratio between the 9th inductance value and the tenth inductance value.It is worth mentioning that, input impedance is converted to output impedance according to second time bridge impedance matching parameter and when second time bridge impedance matching parameter is determined according to the first system voltage VDD1, second system voltage VDD2 and second time bridge predetermined power yield value by the 9th inductance L 9 and the tenth inductance L 10, then designer can decide between the 3rd inductance value and the 4th inductance value by second time bridge impedance matching parameter ratio, by this to improve the power added efficiency (PAE) of radio-frequency power amplifier 400.All the other working mechanisms are identical with above-mentioned Fig. 3 embodiment, do not repeat them here.
(improving an embodiment of the method for power added efficiency)
Please refer to Fig. 5, Fig. 5 is the flow chart of the method for raising power added efficiency illustrated according to an exemplary embodiment of the present.Exemplary steps flow process described in the present embodiment can utilize the radio-frequency power amplifier 100,200,300 and 400 as shown in Fig. 1,2,3 and 4 to implement, therefore please with reference to Fig. 1,2,3 and 4 to illustrate and to understand.The method improving power added efficiency and the linearity comprises the following steps: receive the first input power signal by impedance inverter circuit and export the second input power signal accordingly, wherein impedance inverter circuit carries out power match by impedance transformation, by this to promote power added efficiency and the linearity (step S510) of radio-frequency power amplifier; Receive the second input power signal by current unit gain amplifier and export a power output signal accordingly, and current unit gain amplifier decides predetermined power yield value according to impedance reference value, wherein the input impedance of current unit gain amplifier is made to equal in fact the input impedance (step S520) of radio-frequency power amplifier by impedance inverter circuit; And by output matching circuit in order to received power output signal is carried out power match, and export radio frequency output signal accordingly, wherein output matching circuit has impedance reference value (step S530).
Correlative detail about each step of the method for the raising power added efficiency of radio-frequency power amplifier describes in detail in above-mentioned Fig. 1 ~ Fig. 4 embodiment, does not repeat for this reason at this.Should be noted that at this, each step of Fig. 5 embodiment is only described for convenience, and the embodiment of the present invention is not using each step order to each other as the restrictive condition implementing each embodiment of the present invention.
(possible effect of embodiment)
In sum, the radio-frequency power amplifier that the embodiment of the present invention proposes and the method improving power added efficiency, can provide linear by current unit gain amplifier and turn resistance linearly to transmit input current to output impedance and then generation linear power output, also improve the power added benefit of this current unit gain amplifier by this, the power added efficiency promoting radio-frequency power amplifier when fixing input power can be made by this.
The present invention can implement in any applicable form, comprises these any combination of hardware, software, firmware or more.The present invention also can partly implement with the calculator software performed on one or more data processor and/or digital signal processor.The unit of the embodiment of the present invention and assembly, can physically, functionally and logically implement in any suitable manner.In fact, certain function can be implemented in a part for single unit, a plurality of unit or other functional unit.With regard to the present invention itself, can implement on single unit, or physically and functionally be distributed between different units and processor.
The foregoing is only embodiments of the invention, it is also not used to limit to the scope of the claims of the present invention.

Claims (14)

1. a radio-frequency power amplifier, be electrically connected a front stage circuits to receive one first input power signal, this radio-frequency power amplifier comprises:
One impedance inverter circuit, be electrically connected this front stage circuits, this impedance inverter circuit receives this first input power signal and exports one second input power signal accordingly, wherein this impedance inverter circuit carries out power match by impedance transformation, by this to promote a power added efficiency and a linearity of this radio-frequency power amplifier;
One current unit gain amplifier, be electrically connected this impedance inverter circuit, this current unit gain amplifier receives this second input power signal and exports a power output signal accordingly, and this current unit gain amplifier decides a predetermined power yield value according to an impedance reference value, wherein the input impedance of this current unit gain amplifier is made to equal in fact the input impedance of this radio-frequency power amplifier by this impedance inverter circuit; And
One output matching circuit, is electrically connected this current unit gain amplifier, and this output matching circuit has this impedance reference value and in order to this received power output signal is carried out power match, and exports a radio frequency output signal accordingly.
2. radio-frequency power amplifier as claimed in claim 1, wherein this impedance inverter circuit comprises:
One first inductance, its one end is electrically connected this front stage circuits to receive this first input power signal, and its other end is electrically connected a first system voltage, and this first inductance has one first inductance value; And
One second inductance, its one end is electrically connected this current unit gain amplifier and exports this second input power signal, and its other end is electrically connected an earthed voltage, and this second inductance has one second inductance value,
Wherein an impedance matching parameter is defined as the ratio between this first inductance value and this second inductance value, and when this impedance matching parameter is determined according to this first system voltage, a second system voltage and this predetermined power yield value, then decide the ratio between this first inductance value and this second inductance value by this impedance matching parameter, to adjust this power added efficiency and this linearity of this radio-frequency power amplifier.
3. radio-frequency power amplifier as claimed in claim 2, wherein this current unit gain amplifier comprises:
One the first transistor, its source electrode is electrically connected one end of this second inductance to receive this second input power signal, and its grid is electrically connected a reference bias voltage; And
One first direct current feed-in inductance, its one end is electrically connected the drain electrode of this first transistor and this output matching circuit and exports this power output signal, and its other end is electrically connected this second system voltage.
4. radio-frequency power amplifier as claimed in claim 1, wherein this impedance inverter circuit comprises:
One the 3rd inductance, its one end is electrically connected this front stage circuits to receive this first input power signal, and its other end is electrically connected a first system voltage, and the 3rd inductance has one the 3rd inductance value;
One the 4th inductance, its one end is electrically connected this current unit gain amplifier and exports this second input power signal, its other end is electrically connected an earthed voltage, 4th inductance has one the 4th inductance value, and the ratio wherein between the 3rd inductance value and the 4th inductance value is defined as bridge impedance matching parameter on one first;
One the 5th inductance, its one end is electrically connected this front stage circuits to receive this first input power signal, and its other end is electrically connected this first system voltage, and the 5th inductance has one the 5th inductance value; And
One the 6th inductance, its one end is electrically connected this current unit gain amplifier to export this second input power signal, its other end is electrically connected this earthed voltage, 6th inductance has one the 6th inductance value, ratio wherein between the 5th inductance value and the 6th inductance value is defined as one first time bridge impedance matching parameter
Wherein the 3rd inductance and the 4th inductance according to this on first bridge impedance matching parameter input impedance is converted to output impedance and in order to this power added efficiency of promoting this radio-frequency power amplifier and the linearity, and input impedance is converted to output impedance according to this first time bridge impedance matching parameter and in order to this power added efficiency of promoting this radio-frequency power amplifier and this linearity by the 5th inductance and the 6th inductance
Wherein this impedance matching parameter comprises this bridge impedance matching parameter and this first time bridge impedance matching parameter on first.
5. radio-frequency power amplifier as claimed in claim 4, wherein this current unit gain amplifier comprises:
One transistor seconds, its source electrode is electrically connected one end of the 4th inductance to receive this second input power signal, and its grid receives one first bias voltage;
One third transistor, its source electrode is electrically connected the drain electrode of this transistor seconds, and its grid receives one second bias voltage;
One second direct current feed-in inductance, its one end is electrically connected the drain electrode of this third transistor and this output matching circuit and exports this power output signal, and its other end is electrically connected a second system voltage;
One the 4th transistor, its source electrode is electrically connected the other end of the 6th inductance to receive this second input power signal, and its grid receives this first bias voltage;
One the 5th transistor, its source electrode is electrically connected the drain electrode of the 4th transistor, and its grid receives this second bias voltage; And
One the 3rd direct current feed-in inductance, its one end is electrically connected the drain electrode of the 5th transistor and this output matching circuit and exports this power output signal, and its other end is electrically connected this second system voltage,
Wherein this output matching circuit has a differential input resistance, and this transistor seconds and this third transistor decide bridge predetermined power yield value on one first according to the half resistance of this differential input resistance, and the 4th transistor AND gate the 5th transistor decides one first time bridge predetermined power yield value according to this half resistance of this differential input resistance
Wherein this predetermined power yield value comprises this bridge predetermined power yield value and this first time bridge predetermined power yield value on first.
6. radio-frequency power amplifier as claimed in claim 5, wherein when this on first bridge impedance matching parameter according to this first system voltage, this second system voltage and this is when bridge predetermined power yield value is determined on first, then by this on first bridge impedance matching parameter decide the ratio between this first inductance value and this second inductance value, and when this first time bridge impedance matching parameter is according to this first system voltage, when this second system voltage and this first time bridge predetermined power yield value are determined, then decide the ratio between the 5th inductance value and the 6th inductance value by this first time bridge impedance matching parameter.
7. radio-frequency power amplifier as claimed in claim 1, wherein this impedance inverter circuit comprises:
One the 7th inductance, its one end is electrically connected this front stage circuits to receive this first input power signal, and its other end is electrically connected a first system voltage, and the 7th inductance has one the 7th inductance value;
One first electric capacity, its one end is electrically connected one end of the 7th inductance;
One the 8th inductance, its one end is electrically connected the other end of this first electric capacity and exports this second input power signal, its other end is electrically connected an earthed voltage, 8th inductance has one the 8th inductance value, and the ratio wherein between the 7th inductance value and the 8th inductance value is defined as bridge impedance matching parameter on one second;
One the 9th inductance, its one end is electrically connected this front stage circuits to receive this first input power signal, and its other end is electrically connected this first system voltage, and the 9th inductance has one the 9th inductance value;
One second electric capacity, its one end is electrically connected one end of the 9th inductance; And
The tenth inductance, its one end is electrically connected the other end of this second electric capacity to export this second input power signal, its other end is electrically connected this earthed voltage, tenth inductance has 1 the tenth inductance value, ratio wherein between the 9th inductance value and the tenth inductance value is defined as one second time bridge impedance matching parameter
Wherein the 7th inductance and the 8th inductance according to this on second bridge impedance matching parameter input impedance is converted to output impedance and in order to this power added efficiency of promoting this radio-frequency power amplifier and this linearity, and input impedance is converted to output impedance according to this second time bridge impedance matching parameter and in order to this power added efficiency of promoting this radio-frequency power amplifier and this linearity by the 9th inductance and the tenth inductance
Wherein this impedance matching parameter comprises this bridge impedance matching parameter and this second time bridge impedance matching parameter on second.
8. one kind is improved the method for power added efficiency and the linearity, for a radio-frequency power amplifier, this radio-frequency power amplifier is electrically connected a front stage circuits to receive one first input power signal, and this radio-frequency power amplifier comprises an impedance inverter circuit, one current unit gain amplifier and an output matching circuit, this impedance inverter circuit is electrically connected this front stage circuits and a first system voltage, this current unit gain amplifier is electrically connected this impedance inverter circuit and a second system voltage, this output matching circuit is electrically connected this current unit gain amplifier, wherein the method for this raising power added efficiency and the linearity comprises:
Receive this first input power signal by this impedance inverter circuit and export one second input power signal accordingly, wherein this impedance inverter circuit carries out power match by impedance transformation, by this to promote a power added efficiency and a linearity of this radio-frequency power amplifier;
Receive this second input power signal by this current unit gain amplifier and export a power output signal accordingly, and this current unit gain amplifier decides a predetermined power yield value according to an impedance reference value, wherein the input impedance of this current unit gain amplifier is made to equal in fact the input impedance of this radio-frequency power amplifier by this impedance inverter circuit; And
By this output matching circuit in order to this received power output signal is carried out power match, and export a radio frequency output signal accordingly, wherein this output matching circuit has this impedance reference value.
9. the method improving power added efficiency and the linearity as claimed in claim 8, wherein this impedance inverter circuit comprises:
One first inductance, its one end is electrically connected this front stage circuits to receive this first input power signal, and its other end is electrically connected a first system voltage, and this first inductance has one first inductance value; And
One second inductance, its one end is electrically connected this current unit gain amplifier and exports this second input power signal, and its other end is electrically connected an earthed voltage, and this second inductance has one second inductance value,
Wherein an impedance matching parameter is defined as the ratio between this first inductance value and this second inductance value, and when this impedance matching parameter is determined according to this first system voltage, a second system voltage and this predetermined power yield value, then decide the ratio between this first inductance value and this second inductance value by this impedance matching parameter, to adjust this power added efficiency and the linearity of this radio-frequency power amplifier.
10. the method improving power added efficiency and the linearity as claimed in claim 9, wherein this current unit gain amplifier comprises:
One the first transistor, its source electrode is electrically connected one end of this second inductance to receive this second input power signal, and its grid is electrically connected a reference bias voltage; And
One first direct current feed-in inductance, its one end is electrically connected the drain electrode of this first transistor and this output matching circuit and exports this power output signal, and its other end is electrically connected this second system voltage.
11. methods improving power added efficiency and the linearity as claimed in claim 8, wherein this impedance inverter circuit comprises:
One the 3rd inductance, its one end is electrically connected this front stage circuits to receive this first input power signal, and its other end is electrically connected a first system voltage, and the 3rd inductance has one the 3rd inductance value;
One the 4th inductance, its one end is electrically connected this current unit gain amplifier and exports this second input power signal, its other end is electrically connected an earthed voltage, 4th inductance has one the 4th inductance value, and the ratio wherein between the 3rd inductance value and the 4th inductance value is defined as bridge impedance matching parameter on one first;
One the 5th inductance, its one end is electrically connected this front stage circuits to receive this first input power signal, and its other end is electrically connected this first system voltage, and the 5th inductance has one the 5th inductance value; And
One the 6th inductance, its one end is electrically connected this current unit gain amplifier to export this second input power signal, its other end is electrically connected this earthed voltage, 6th inductance has one the 6th inductance value, ratio wherein between the 5th inductance value and the 6th inductance value is defined as one first time bridge impedance matching parameter
Wherein the 3rd inductance and the 4th inductance according to this on first bridge impedance matching parameter input impedance is converted to output impedance and in order to this power added efficiency of promoting this radio-frequency power amplifier and this linearity, and input impedance is converted to output impedance according to this first time bridge impedance matching parameter and in order to this power added efficiency of promoting this radio-frequency power amplifier and this linearity by the 5th inductance and the 6th inductance
Wherein this impedance matching parameter comprises this bridge impedance matching parameter and this first time bridge impedance matching parameter on first.
12. methods improving power added efficiency and the linearity as claimed in claim 11, wherein this current unit gain amplifier comprises:
One transistor seconds, its source electrode is electrically connected one end of the 4th inductance to receive this second input power signal, and its grid receives one first bias voltage;
One third transistor, its source electrode is electrically connected the drain electrode of this transistor seconds, and its grid receives one second bias voltage;
One second direct current feed-in inductance, its one end is electrically connected the drain electrode of this third transistor and this output matching circuit and exports this power output signal, and its other end is electrically connected a second system voltage;
One the 4th transistor, its source electrode is electrically connected the other end of the 6th inductance to receive this second input power signal, and its grid receives this first bias voltage;
One the 5th transistor, its source electrode is electrically connected the drain electrode of the 4th transistor, and its grid receives this second bias voltage; And
One the 3rd direct current feed-in inductance, its one end is electrically connected the drain electrode of the 5th transistor and this output matching circuit and exports this power output signal, and its other end is electrically connected this second system voltage,
Wherein this output matching circuit has a differential input resistance, and this transistor seconds and this third transistor decide bridge predetermined power yield value on one first according to the half resistance of this differential input resistance,
And the 4th transistor AND gate the 5th transistor decides one first time bridge predetermined power yield value according to this half resistance of this differential input resistance,
Wherein this predetermined power yield value comprises this bridge predetermined power yield value and this first time bridge predetermined power yield value on first.
13. methods improving power added efficiency and the linearity as claimed in claim 12, wherein when this on first bridge impedance matching parameter according to this first system voltage, this second system voltage and this is when bridge predetermined power yield value is determined on first, then by this on first bridge impedance matching parameter decide the ratio between this first inductance value and this second inductance value, and when this first time bridge impedance matching parameter is according to this first system voltage, when this second system voltage and this first time bridge predetermined power yield value are determined, then decide the ratio between the 5th inductance value and the 6th inductance value by this first time bridge impedance matching parameter.
14. methods improving power added efficiency and the linearity as claimed in claim 8, wherein this impedance inverter circuit comprises:
One the 7th inductance, its one end is electrically connected this front stage circuits to receive this first input power signal, and its other end is electrically connected a first system voltage, and the 7th inductance has one the 7th inductance value;
One first electric capacity, its one end is electrically connected one end of the 7th inductance;
One the 8th inductance, its one end is electrically connected the other end of this first electric capacity and exports this second input power signal, its other end is electrically connected an earthed voltage, 8th inductance has one the 8th inductance value, and the ratio wherein between the 7th inductance value and the 8th inductance value is defined as bridge impedance matching parameter on one second;
One the 9th inductance, its one end is electrically connected this front stage circuits to receive this first input power signal, and its other end is electrically connected this first system voltage, and the 9th inductance has one the 9th inductance value;
One second electric capacity, its one end is electrically connected one end of the 9th inductance; And
The tenth inductance, its one end is electrically connected the other end of this second electric capacity to export this second input power signal, its other end is electrically connected this earthed voltage, tenth inductance has 1 the tenth inductance value, ratio wherein between the 9th inductance value and the tenth inductance value is defined as one second time bridge impedance matching parameter
Wherein the 7th inductance and the 8th inductance according to this on second bridge impedance matching parameter input impedance is converted to output impedance and in order to this power added efficiency of promoting this radio-frequency power amplifier and this linearity, and input impedance is converted to output impedance according to this second time bridge impedance matching parameter and in order to this power added efficiency of promoting this radio-frequency power amplifier and this linearity by the 9th inductance and the tenth inductance
Wherein this impedance matching parameter comprises this bridge impedance matching parameter and this second time bridge impedance matching parameter on second.
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