CN105024573A - CoolMosfet T-type three-level topological circuit and inverter - Google Patents

CoolMosfet T-type three-level topological circuit and inverter Download PDF

Info

Publication number
CN105024573A
CN105024573A CN201510390571.5A CN201510390571A CN105024573A CN 105024573 A CN105024573 A CN 105024573A CN 201510390571 A CN201510390571 A CN 201510390571A CN 105024573 A CN105024573 A CN 105024573A
Authority
CN
China
Prior art keywords
coolmosfet
igbt
level
circuit
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201510390571.5A
Other languages
Chinese (zh)
Inventor
王勇
谢尚玉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Jiao Tong University
State Grid Corp of China SGCC
NR Electric Co Ltd
State Grid Liaoning Electric Power Co Ltd
Original Assignee
Shanghai Jiao Tong University
State Grid Corp of China SGCC
NR Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Jiao Tong University, State Grid Corp of China SGCC, NR Electric Co Ltd filed Critical Shanghai Jiao Tong University
Priority to CN201510390571.5A priority Critical patent/CN105024573A/en
Publication of CN105024573A publication Critical patent/CN105024573A/en
Pending legal-status Critical Current

Links

Abstract

The invention provides a CoolMosfet T-type three-level topological circuit, and the circuit comprises a CoolMosfet S1c, a CoolMosfet S2c, a CoolMosfet S3, a CoolMosfet S4, an IGBT S1, an IGBT S2, a diode D1, and a diode D2. Meanwhile, the invention also provides an inverter which employs the above circuit. A zero level current passes through two CoolMosfet+CoosMosfet parallel circuits, and a CoolMosfet trench is greatly low in resistance. The conduction loss of an inversion circuit is greatly reduced, and the conduction loss of the circuit is effectively reduced. A PWM signal does not need a dead zone because of the existing of direct-connection induction prevention, thereby achieving no-dead-zone control. There is no reverse recovery loss of a clamping diode, thereby further reducing the conduction loss of the circuit.

Description

The T-shaped three-level topology circuit of CoolMosfet and inverter
Technical field
The present invention relates to electric electronic current change technology field, be specifically related to the T-shaped three-level topology circuit of a kind of novel CoolMosfet and inverter.
Background technology
The intrinsic topological structure of the T-shaped three-level topology circuit of tradition determines it and there is limitation.As shown in Figure 1, traditional T-shaped three-level topology is by 4 IGBT (igbt), i.e. S1, S2, S1c, S2c composition in figure.
As shown in Figure 2, the course of work of analysis conventional T-shaped three-level topology circuit is known, and when brachium pontis exports zero level, electric current, through two power tubes (IGBT+ diode), is defined as long guiding path here; Diode is in each PWM cycle in addition, when plus or minus level and zero level switch, all there is diode reverse recovery losses.It can thus be appreciated that traditional T-shaped three-level topology circuit causes T-shaped topological structure loss larger.
Summary of the invention
For above shortcomings in prior art, the object of this invention is to provide the T-shaped three-level topology circuit of a kind of CoolMosfet and inverter, effectively reduce traditional T-shaped three-level inverter loss, improve inverter conversion efficiency.
CoolMosfet is a kind of channel-type gate MOS FET, " T " conductive path in vertical conduction type VDMOSFET is shortened to two parallel vertical-type conductive paths, thus reduces on state resistance.
To achieve these goals, the present invention is achieved by the following technical solutions.
According to an aspect of the present invention, provide the T-shaped three-level topology circuit of a kind of CoolMosfet, comprise CoolMosfet S1c, CoolMosfet S2c, CoolMosfet S3, CoolMosfet S4, IGBT S1, IGBT S2 and diode D1 and diode D2; Wherein:
IGBT S1 and IGBT S2 connects and forms loop;
The branch road formed after series connection that CoolMosfet S3 drains and CoolMosfet S2c drain electrode is connected is connected between IGBT S1 emitter and ground (zero potential point);
The branch road formed after CoolMosfet S4 source electrode and CoolMosfet S1c source series is connected between IGBT S2 collector electrode and ground (zero potential point);
Described diode D1 and diode D2 tie point position be in circuit following any one:
The first: reversal connection in parallel is in IGBT S1 and S2 respectively for diode D1 and D2, and namely diode D1 anode is connected to IGBT S1 emitter, and negative electrode is connected to IGBT S1 and drains, and diode D2 anode is connected to IGBT S2 emitter, and negative electrode is connected to IGBT S2 and drains;
The second: diode D1 anode is connected to IGBT S2 collector electrode, negative electrode is connected to IGBT S1 collector electrode, and diode D2 anode is connected to IGBT S2 emitter, and negative electrode is connected to IGBT S1 emitter.
Preferably, the output of described CoolMosfetT type three-level topology circuit is also provided with anti-straight-through inductance.
Preferably, in the positive half period of the T-shaped three-level topology circuit of CoolMosfet, the positive level of the T-shaped three-level topology circuit of CoolMosfet and zero level conversion;
In the negative half-cycle of the T-shaped three-level topology circuit of CoolMosfet, the negative level of the T-shaped three-level topology circuit of CoolMosfet and zero level conversion.
Preferably, the positive half period course of work of the T-shaped three-level topology circuit of described CoolMosfet is:
When IGBT S1, CoolMosfet S4 and CoolMosfet S2c open-minded, CoolMosfet S3, IGBT S2 and CoolMosfet S1c turn off, now circuit export positive level; When electric current is positive direction, flowing through path is from IGBT S1 collector electrode to IGBT S1 emitter; When electric current is opposite direction, flowing through path is from diode D1 anode to diode D1 negative electrode;
When CoolMosfet S1c opens, circuit enters the first transient process;
When IGBT S1 turns off, circuit enters the second transient process;
When CoolMosfet S3 opens, circuit enters zero level stable state, now on off state is that CoolMosfetS3, CoolMosfet S4, CoolMosfet S1c and CoolMosfet S2c is open-minded, IGBT S1 and IGBT S2 turns off, and current path is two sections of CoolMosfet+CoosMosfet branch circuit parallel connections; Comprise the following two kinds situation:
If electric current is greater than zero, then current path comprises following two-way:
The first via, electric current is from N point reverses through CoolMosfet S3 raceway groove, and forward, through CoolMosfet S2c raceway groove, arrives O point;
Second tunnel, electric current flows through CoolMosfet S4 raceway groove from N point forward, arrives O point reverses through CoolMosfet S1c raceway groove;
If electric current is less than zero, then current path comprises following two-way:
The first via, electric current is from O point reverses through CoolMosfet S2c raceway groove, and forward, through CoolMosfet S3 raceway groove, arrives N point;
Second tunnel, electric current flows through CoolMosfet S1c raceway groove from O point forward, arrives N point reverses through CoolMosfet S4 raceway groove;
The syndeton of described two sections of CoolMosfet+CoosMosfet branch roads is respectively:
-CoolMosfet S3 drain electrode is connected with CoolMosfet S2c drain electrode;
-CoolMosfet S4 source electrode is connected with CoolMosfet S1c source electrode.
Preferably, in the positive half period course of work, within described first transient process second transient process all maintains several microsecond, in order to provide the commutation time between positive level and zero level.
Preferably, the negative half-cycle course of work of the T-shaped three-level topology circuit of described CoolMosfet is:
When CoolMosfet S3, IGBT S2 and CoolMosfet S1c open-minded, IGBT S1, CoolMosfet S4 and CoolMosfet S2c turn off, now circuit exports negative level, and when electric current is positive direction, flowing through path is from IGBT S2 collector electrode to IGBT S2 emitter; When electric current is opposite direction, flowing through path is from diode D2 anode to diode D2 negative electrode;
When CoolMosfet S2c opens, circuit enters the first transient process;
When IGBT S2 turns off, circuit enters the second transient process;
When CoolMosfet S4 is open-minded, circuit enters zero level stable state, now on off state is that CoolMosfet S3, CoolMosfet S4, CoolMosfet S1c and CoolMosfet S2c are open-minded, IGBT S1 and IGBT S2 turns off, and current path is two sections of CoolMosfet+CoosMosfet branch circuit parallel connections; Comprise the following two kinds situation:
If electric current is greater than zero, then current path comprises following two-way:
The first via, electric current is from N point reverses through CoolMosfet S3 raceway groove, and forward, through CoolMosfet S2c raceway groove, arrives O point;
Second tunnel, electric current flows through CoolMosfet S4 raceway groove from N point forward, arrives O point reverses through CoolMosfet S1c raceway groove;
If electric current is less than zero, then current path comprises following two-way:
The first via, electric current is from O point reverses through CoolMosfet S2c raceway groove, and forward, through CoolMosfet S3 raceway groove, arrives N point;
Second tunnel, electric current flows through CoolMosfet S1c raceway groove from O point forward, arrives N point reverses through CoolMosfet S4 raceway groove;
The syndeton of described two sections of CoolMosfet+CoosMosfet branch roads is respectively:
-CoolMosfet S3 drain electrode is connected with CoolMosfet S2c drain electrode;
-CoolMosfet S4 source electrode is connected with CoolMosfet S1c source electrode.
Preferably, in the negative half-cycle course of work, within described first transient process second transient process all maintains several microsecond, in order to provide the commutation time between negative level and zero level.
According to another aspect of the present invention, provide a kind of inverter based on the T-shaped three-level topology circuit of CoolMosfet, adopt the T-shaped three-level topology circuit of the above-mentioned CoolMosfet of at least one.
Compared with prior art, the present invention has following beneficial effect:
1, due to the T-shaped three-level topology circuit of CoolMosfet provided by the invention, its zero level electric current is through two CoolMosfet+CoosMosfe parallel branches, and CoolMosfet channel resistance is extremely low, inverter circuit conduction loss reduces greatly, effectively reduces circuit turn-on loss;
2, due to the existence of anti-straight-through inductance, pwm signal does not need to add dead band (between IGBT S1 and CoolMosfetS1c, between IGBT S2 and CoolMosfet S2c), achieves no dead-time control;
3, the T-shaped three-level topology circuit of CoolMosfet provided by the invention, does not have the reverse recovery loss of clamp diode, reduce further circuit turn-on loss.
Accompanying drawing explanation
By reading the detailed description done non-limiting example with reference to the following drawings, other features, objects and advantages of the present invention will become more obvious:
Fig. 1 is traditional T-shaped three-level topology structure chart;
Fig. 2 is the long guiding path schematic diagram of traditional T-shaped three level;
Fig. 3 is T-shaped the first structural representation of three-level topology circuit of CoolMosfet of the present invention;
Fig. 4 is CoolMosfet of the present invention T-shaped three-level topology the first structure of circuit positive half cycle job analysis schematic diagram, wherein, a () is positive level stable state, b () changes the first transient state for positive level & zero level, c () changes the second transient state for positive level & zero level, (d) is zero level stable state;
Fig. 5 is the first structure negative half period job analysis schematic diagram of the T-shaped three-level topology circuit of CoolMosfet of the present invention, wherein, a () is negative level stable state, b () changes the first transient state for negative level & zero level, c () changes the second transient state for negative level & zero level, (d) is zero level stable state;
Fig. 6 is CoolMosfet of the present invention T-shaped three-level topology circuit the second structural representation;
Fig. 7 is CoolMosfet of the present invention T-shaped three-level topology circuit the second structure positive half cycle job analysis schematic diagram, wherein, a () is positive level stable state, b () changes the first transient state for positive level & zero level, c () changes the second transient state for positive level & zero level, (d) is zero level stable state;
Fig. 8 is the inverter structure schematic diagram adopting the T-shaped three-level topology circuit of single-phase CoolMosfet;
Fig. 9 is the inverter structure schematic diagram adopting the T-shaped three-level topology circuit of three-phase CoolMosfet.
Embodiment
Below embodiments of the invention are elaborated: the present embodiment is implemented under premised on technical solution of the present invention, give detailed execution mode and concrete operating process.It should be pointed out that to those skilled in the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.
Embodiment 1
Present embodiments provide a kind of CoolMosfetT type three-level topology circuit, comprise CoolMosfet S1c, CoolMosfet S2c, CoolMosfet S3, CoolMosfet S4, IGBT S1, IGBT S2 and diode D1 and diode D2; Wherein:
IGBT S1 and IGBT S2 connects and forms loop;
CoolMosfet S3 drain and after CoolMosfet S2c drain series the branch road that formed be connected to IGBT S1 emitter and between (zero potential point);
The branch road formed after CoolMosfet S4 source electrode and CoolMosfet S1c source series is connected between IGBT S2 collector electrode and ground (zero potential point).
Described diode D1 and diode D2 tie point position is in circuit: (as shown in Figure 3)
Reversal connection in parallel is in IGBT S1 and S2 respectively for diode D1 and D2, and namely diode D1 anode is connected to IGBTS1 emitter, and negative electrode is connected to IGBT S1 and drains, and diode D2 anode is connected to IGBT S2 emitter, and negative electrode is connected to IGBT S2 and drains;
Further, the output of described CoolMosfetT type three-level topology circuit is also provided with anti-straight-through inductance.
Further, in the positive half period of the T-shaped three-level topology circuit of CoolMosfet, the positive level of the T-shaped three-level topology circuit of CoolMosfet and zero level conversion;
In the negative half-cycle of the T-shaped three-level topology circuit of CoolMosfet, the negative level of the T-shaped three-level topology circuit of CoolMosfet and zero level conversion.
Further, the positive half period course of work of the T-shaped three-level topology circuit of described CoolMosfet is:
When IGBT S1, CoolMosfet S4 and CoolMosfet S2c open-minded, CoolMosfet S3, IGBT S2 and CoolMosfet S1c turn off, now brachium pontis (namely circuit O, N two point voltage is poor) export positive level; When electric current is positive direction, flowing through path is from IGBT S1 collector electrode to IGBT S1 emitter; When electric current is opposite direction, flowing through path is from diode D1 anode to diode D1 negative electrode;
When CoolMosfet S1c opens, circuit enters the first transient process;
When IGBT S1 turns off, circuit enters the second transient process;
When CoolMosfet S3 opens, circuit enters zero level stable state, now on off state is that CoolMosfetS3, CoolMosfet S4, CoolMosfet S1c and CoolMosfet S2c is open-minded, IGBT S1 and IGBT S2 turns off, and current path is two sections of CoolMosfet+CoosMosfet branch circuit parallel connections; Comprise the following two kinds situation:
If electric current is greater than zero, then current path comprises following two-way:
The first via, electric current is from N point reverses through CoolMosfet S3 raceway groove, and forward, through CoolMosfet S2c raceway groove, arrives O point;
Second tunnel, electric current flows through CoolMosfet S4 raceway groove from N point forward, arrives O point reverses through CoolMosfet S1c raceway groove;
If electric current is less than zero, then current path comprises following two-way:
The first via, electric current is from O point reverses through CoolMosfet S2c raceway groove, and forward, through CoolMosfet S3 raceway groove, arrives N point;
Second tunnel, electric current flows through CoolMosfet S1c raceway groove from O point forward, arrives N point reverses through CoolMosfet S4 raceway groove;
The syndeton of described two sections of CoolMosfet+CoosMosfet branch roads is respectively:
-CoolMosfet S3 drain electrode is connected with CoolMosfet S2c drain electrode;
-CoolMosfet S4 source electrode is connected with CoolMosfet S1c source electrode.
Further, the negative half-cycle course of work of the T-shaped three-level topology circuit of described CoolMosfet is: (negative half-cycle refers to that circuit exports negative level and zero level is changed mutually, and negative level and positive level are symmetric relation)
When CoolMosfet S3, IGBT S2 and CoolMosfet S1c open-minded, IGBT S1, CoolMosfet S4 and CoolMosfet S2c turn off, now circuit exports negative level, and when electric current is positive direction, flowing through path is from IGBT S2 collector electrode to IGBT S2 emitter; When electric current is opposite direction, flowing through path is from diode D2 anode to diode D2 negative electrode;
When CoolMosfet S2c opens, circuit enters the first transient process;
When IGBT S2 turns off, circuit enters the second transient process;
When CoolMosfet S4 is open-minded, circuit enters zero level stable state, now on off state is that CoolMosfet S3, CoolMosfet S4, CoolMosfet S1c and CoolMosfet S2c are open-minded, IGBT S1 and IGBT S2 turns off, and current path is two sections of CoolMosfet+CoosMosfet branch circuit parallel connections; Comprise the following two kinds situation:
If electric current is greater than zero, then current path comprises following two-way:
The first via, electric current is from N point reverses through CoolMosfet S3 raceway groove, and forward, through CoolMosfet S2c raceway groove, arrives O point;
Second tunnel, electric current flows through CoolMosfet S4 raceway groove from N point forward, arrives O point reverses through CoolMosfet S1c raceway groove;
If electric current is less than zero, then current path comprises following two-way:
The first via, electric current is from O point reverses through CoolMosfet S2c raceway groove, and forward, through CoolMosfet S3 raceway groove, arrives N point;
Second tunnel, electric current flows through CoolMosfet S1c raceway groove from O point forward, arrives N point reverses through CoolMosfet S4 raceway groove;
The syndeton of described two sections of CoolMosfet+CoosMosfet branch roads is respectively:
-CoolMosfet S3 drain electrode is connected with CoolMosfet S2c drain electrode;
-CoolMosfet S4 source electrode is connected with CoolMosfet S1c source electrode.
Further, in the positive half period course of work, within described first transient process second transient process all maintains several microsecond, in order to provide the commutation time between positive level and zero level.
Further, in the negative half-cycle course of work, within described first transient process second transient process all maintains several microsecond, in order to provide the commutation time between negative level and zero level.
Below in conjunction with accompanying drawing, the present embodiment is further described.
As shown in Figure 3, CoolMosfetT type three-level topology circuit comprises four CoolMosfet (S1c, S2c, S3, S4), two IGBT (S1, S2), and circuit output end has anti-straight-through inductance.
For positive half period process, in positive half cycle, mutually change between the positive level of CoolMosfetT type three level and zero level, its course of work as shown in Figure 4.
As shown in (a) in Fig. 4, S1 & S4 & S2c is open-minded, and S3 & S2 & S1c turns off, and now brachium pontis exports positive level.When electric current is positive direction, flowing through path is IGBT; Arrow represents the path that the sense of current is contrary in the other direction.
When S1c is open-minded, circuit enters the first transient process as Suo Shi (b) in Fig. 4.
S1 turns off afterwards, and circuit enters the second transient process, as shown in (c) in Fig. 4
Above first transient process, the second transient process are very of short duration, within only maintaining several microsecond, in order to provide the commutation time between positive level and zero level.
Last S3 is open-minded, and circuit enters zero level stable state, and now on off state is that S3 & S4 & S1c & S2c is open-minded, and S1 & S2 turns off.As shown in (d) in Fig. 4, at this moment current path is two sections of CoolMosfet+CoosMosfet branch circuit parallel connections.If electric current is greater than zero, then electric current is from N point one tunnel reverses through S3 raceway groove, and forward, through S2c raceway groove, arrives O point; S4 raceway groove is flow through from N point forward in an other road, arrives O point reverses through S1c raceway groove.Otherwise when the current direction is reversed, arrive N point through two sections of CoolMosfet+CoosMosfet branch circuit parallel connections from O point equally.
In like manner, the process that brachium pontis output zero level is changed to positive level is:
As shown in (d) in Fig. 4, S3 & S4 & S1c & S2c is open-minded, and S1 & S2 turns off, and now brachium pontis exports zero level.At this moment current path is two sections of CoolMosfet+CoosMosfet branch circuit parallel connections.If electric current is greater than zero, then electric current is from N point one tunnel reverses through S3 raceway groove, and forward, through S2c raceway groove, arrives O point; S4 raceway groove is flow through from N point forward in an other road, arrives O point reverses through S1c raceway groove.Otherwise when the current direction is reversed, arrive N point through two sections of CoolMosfet+CoosMosfet branch circuit parallel connections from O point equally.
When S3 closes, circuit enters the second transient process as Suo Shi (c) in Fig. 4.
S1 is open-minded afterwards, and circuit enters the first transient process, as shown in (b) in Fig. 4
Above first transient process, the second transient process are very of short duration, within only maintaining several microsecond, in order to provide the commutation time between positive level and zero level.
Last S1c closes, and circuit enters positive level stable state, and now on off state is that S1 & S4 & S2c is open-minded, and S3 & S2 & S1c turns off.As shown in (a) in Fig. 4, when electric current is positive direction, flowing through path is IGBT; Arrow represents the path that the sense of current is contrary in the other direction.
For negative half-cycle process, in negative half period, mutually change between the negative level of CoolMosfetT type three level and zero level, its course of work as shown in Figure 5.
As shown in (a) in Fig. 5, S3 & S2 & S1c is open-minded, and S1 & S4 & S2c turns off, and now brachium pontis exports negative level.When electric current is positive direction, flowing through path is IGBT; Arrow represents the path that the sense of current is contrary in the other direction.
When S2c is open-minded, circuit enters the first transient process as Suo Shi (b) in Fig. 5.
S2 turns off afterwards, and circuit enters the second transient process, as shown in (c) in Fig. 5
Above first transient process, the second transient process are very of short duration, within only maintaining several microsecond, in order to provide the commutation time between negative level and zero level.
Last S4 is open-minded, and circuit enters zero level stable state, and now on off state is that S3 & S4 & S1c & S2c is open-minded, and S1 & S2 turns off.As shown in (d) in Fig. 5, at this moment current path is two sections of CoolMosfet+CoosMosfet branch circuit parallel connections.If electric current is greater than zero, then electric current is from N point one tunnel reverses through S3 raceway groove, and forward, through S2c raceway groove, arrives O point; S4 raceway groove is flow through from N point forward in an other road, arrives O point reverses through S1c raceway groove.Otherwise when the current direction is reversed, arrive N point through two sections of CoolMosfet+CoosMosfet branch circuit parallel connections from O point equally.
In like manner, the process that brachium pontis output zero level is changed to negative level is:
As shown in (d) in Fig. 5, S3 & S4 & S1c & S2c is open-minded, and S1 & S2 turns off, and now brachium pontis exports zero level.At this moment current path is two sections of CoolMosfet+CoosMosfet branch circuit parallel connections.If electric current is greater than zero, then electric current is from N point one tunnel reverses through S3 raceway groove, and forward, through S2c raceway groove, arrives O point; S4 raceway groove is flow through from N point forward in an other road, arrives O point reverses through S1c raceway groove.Otherwise when the current direction is reversed, arrive N point through two sections of CoolMosfet+CoosMosfet branch circuit parallel connections from O point equally.
When S4 closes, circuit enters the second transient process as Suo Shi (c) in Fig. 5.
S2 is open-minded afterwards, and circuit enters the first transient process, as shown in (b) in Fig. 5
Above first transient process, the second transient process are very of short duration, within only maintaining several microsecond, in order to provide the commutation time between positive level and zero level.
Last S2c closes, and circuit enters negative level stable state, and now on off state S3 & S2 & S1c is open-minded, and S1 & S4 & S2c turns off.As shown in (a) in Fig. 5, when electric current is positive direction, flowing through path is IGBT; Arrow represents the path that the sense of current is contrary in the other direction.
The CoolMosfetT type three-level topology circuit tool that the present embodiment provides has the following advantages:
1) because this topological zero level electric current is through two parallel branches, and CoolMosfet channel resistance is extremely low, and inverter circuit conduction loss will reduce greatly;
2) due to the existence of anti-straight-through inductance, pwm signal does not need to add dead band (between S1 & S1c, between S2 & S2c);
3) reverse recovery loss of clamp diode is not had.
Embodiment 2
Embodiment 2 is the change case of embodiment 1, and in the present embodiment, diode D1 and diode D2 tie point position is in circuit: (as shown in Figure 6)
Diode D1 anode is connected to IGBT S2 collector electrode, and negative electrode is connected to IGBT S1 collector electrode, and diode D2 anode is connected to IGBT S2 emitter, and negative electrode is connected to IGBT S1 emitter.
As shown in Figure 7, the guiding path of the positive half period process of CoolMosfet T-shaped three-level topology circuit that provides of the present embodiment is identical with embodiment 1 (in Fig. 4 in (a) ~ Fig. 4 (d)) described cardinal principle.That is, the CoolMosfet T-shaped three-level topology circuit that the present embodiment provides has all advantages of the CoolMosfet T-shaped three-level topology circuit that embodiment 1 provides.In addition, (b) first is in transient process in the figure 7, when electric current is from the D1 change of current to S1c & S4 path, as (b) in Fig. 4, do not lead directly to inductance through anti-, so the T-shaped three-level topology circuit of CoolMosfet that the CoolMosfet T-shaped three-level topology circuit that the present embodiment provides provides compared to embodiment 2, can more effectively reduce commutation time, inductor loss.
Embodiment 3
Present embodiments provide a kind of inverter based on the T-shaped three-level topology circuit of CoolMosfet, the T-shaped three-level topology circuit of the CoolMosfet adopting at least one embodiment 1 and/or embodiment 2 to provide.
In the present embodiment, the inversion topological exported can be selected as required, such as, adopt a CoolMosfetT type three-level topology circuit, form the inverter with the T-shaped three-level topology circuit of single-phase CoolMosfet, as shown in Figure 8; Or adopt three T-shaped three-level topology circuit of CoolMosfet, form the inverter with three-phase CoolMosfetT type three-level topology circuit, as shown in Figure 9; Finally realize the optimum working efficiency of inverter.
Above specific embodiments of the invention are described.It is to be appreciated that the present invention is not limited to above-mentioned particular implementation, those skilled in the art can make various distortion or amendment within the scope of the claims, and this does not affect flesh and blood of the present invention.

Claims (8)

1. the T-shaped three-level topology circuit of CoolMosfet, is characterized in that, comprises CoolMosfet S1c, CoolMosfet S2c, CoolMosfet S3, CoolMosfet S4, IGBT S1, IGBT S2 and diode D1 and diode D2; Wherein:
Described IGBT S1 and IGBT S2 connects and forms loop;
Described CoolMosfet S3 drains and the branch road that formed after CoolMosfet S2c drain series is connected between IGBT S1 emitter and ground;
The branch road formed after described CoolMosfet S4 source electrode and CoolMosfet S1c source series is connected between IGBT S2 collector electrode and ground;
Described diode D1 and diode D2 tie point position in circuit adopt following any one:
The reversal connection in parallel of-diode D1 and diode D2 difference is in IGBT S1 and IGBT S2, namely diode D1 anode is connected to IGBT S1 emitter, diode D1 negative electrode is connected to IGBT S1 and drains, and diode D2 anode is connected to IGBT S2 emitter, and diode D2 negative electrode is connected to IGBT S2 and drains;
-diode D1 anode is connected to IGBT S2 collector electrode, and diode D1 negative electrode is connected to IGBT S1 collector electrode, and diode D2 anode is connected to IGBT S2 emitter, and negative electrode is connected to IGBT S1 emitter.
2. the T-shaped three-level topology circuit of CoolMosfet according to claim 1, is characterized in that, in the positive half period of the T-shaped three-level topology circuit of CoolMosfet, and the positive level of the T-shaped three-level topology circuit of CoolMosfet and zero level conversion;
In the negative half-cycle of the T-shaped three-level topology circuit of CoolMosfet, the negative level of the T-shaped three-level topology circuit of CoolMosfet and zero level conversion.
3. the T-shaped three-level topology circuit of CoolMosfet according to claim 2, is characterized in that, the positive half period course of work of the T-shaped three-level topology circuit of described CoolMosfet is:
When IGBT S1, CoolMosfet S4 and CoolMosfet S2c open-minded, CoolMosfet S3, IGBT S2 and CoolMosfet S1c turn off, now circuit export positive level; When electric current is positive direction, flowing through path is from IGBT S1 collector electrode to IGBT S1 emitter; When electric current is opposite direction, flowing through path is from diode D1 anode to diode D1 negative electrode;
When CoolMosfet S1c opens, circuit enters the first transient process;
When IGBT S1 turns off, circuit enters the second transient process;
When CoolMosfet S3 opens, circuit enters zero level stable state, now on off state is that CoolMosfetS3, CoolMosfet S4, CoolMosfet S1c and CoolMosfet S2c is open-minded, IGBT S1 and IGBT S2 turns off, and current path is two sections of CoolMosfet+CoosMosfet branch circuit parallel connections; Comprise the following two kinds situation:
If electric current is greater than zero, then current path comprises following two-way:
The first via, electric current is from N point reverses through CoolMosfet S3 raceway groove, and forward, through CoolMosfet S2c raceway groove, arrives O point;
Second tunnel, electric current flows through CoolMosfet S4 raceway groove from N point forward, arrives O point reverses through CoolMosfet S1c raceway groove;
If electric current is less than zero, then current path comprises following two-way:
The first via, electric current is from O point reverses through CoolMosfet S2c raceway groove, and forward, through CoolMosfet S3 raceway groove, arrives N point;
Second tunnel, electric current flows through CoolMosfet S1c raceway groove from O point forward, arrives N point reverses through CoolMosfet S4 raceway groove;
The syndeton of described two sections of CoolMosfet+CoosMosfet branch roads is respectively:
-CoolMosfet S3 drain electrode is connected with CoolMosfet S2c drain electrode;
-CoolMosfet S4 source electrode is connected with CoolMosfet S1c source electrode.
4. the T-shaped three-level topology circuit of CoolMosfet according to claim 3, is characterized in that, within described first transient process second transient process all maintains several microsecond, in order to provide the commutation time between positive level and zero level.
5. the T-shaped three-level topology circuit of CoolMosfet according to claim 2, is characterized in that, the negative half-cycle course of work of the T-shaped three-level topology circuit of described CoolMosfet is:
When CoolMosfet S3, IGBT S2 and CoolMosfet S1c open-minded, IGBT S1, CoolMosfet S4 and CoolMosfet S2c turn off, now circuit exports negative level, and when electric current is positive direction, flowing through path is from IGBT S2 collector electrode to IGBT S2 emitter; When electric current is opposite direction, flowing through path is from diode D2 anode to diode D2 negative electrode;
When CoolMosfet S2c opens, circuit enters the first transient process;
When IGBT S2 turns off, circuit enters the second transient process;
When CoolMosfet S4 is open-minded, circuit enters zero level stable state, now on off state is that CoolMosfet S3, CoolMosfet S4, CoolMosfet S1c and CoolMosfet S2c are open-minded, IGBT S1 and IGBT S2 turns off, and current path is two sections of CoolMosfet+CoosMosfet branch circuit parallel connections; Comprise the following two kinds situation:
If electric current is greater than zero, then current path comprises following two-way:
The first via, electric current is from N point reverses through CoolMosfet S3 raceway groove, and forward, through CoolMosfet S2c raceway groove, arrives O point;
Second tunnel, electric current flows through CoolMosfet S4 raceway groove from N point forward, arrives O point reverses through CoolMosfet S1c raceway groove;
If electric current is less than zero, then current path comprises following two-way:
The first via, electric current is from O point reverses through CoolMosfet S2c raceway groove, and forward, through CoolMosfet S3 raceway groove, arrives N point;
Second tunnel, electric current flows through CoolMosfet S1c raceway groove from O point forward, arrives N point reverses through CoolMosfet S4 raceway groove;
The syndeton of described two sections of CoolMosfet+CoosMosfet branch roads is respectively:
-CoolMosfet S3 drain electrode is connected with CoolMosfet S2c drain electrode;
-CoolMosfet S4 source electrode is connected with CoolMosfet S1c source electrode.
6. the T-shaped three-level topology circuit of CoolMosfet according to claim 5, is characterized in that, within described first transient process, the second transient process all maintain several microsecond, in order to provide the commutation time between negative level and zero level.
7. the T-shaped three-level topology circuit of CoolMosfet according to any one of claim 1 to 6, is characterized in that, the output of the T-shaped three-level topology circuit of described CoolMosfet is also provided with anti-straight-through inductance.
8. based on an inverter for the T-shaped three-level topology circuit of CoolMosfet, it is characterized in that, adopt the T-shaped three-level topology circuit of CoolMosfet according to any one of claim 1 to 7.
CN201510390571.5A 2015-07-03 2015-07-03 CoolMosfet T-type three-level topological circuit and inverter Pending CN105024573A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510390571.5A CN105024573A (en) 2015-07-03 2015-07-03 CoolMosfet T-type three-level topological circuit and inverter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510390571.5A CN105024573A (en) 2015-07-03 2015-07-03 CoolMosfet T-type three-level topological circuit and inverter

Publications (1)

Publication Number Publication Date
CN105024573A true CN105024573A (en) 2015-11-04

Family

ID=54414340

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510390571.5A Pending CN105024573A (en) 2015-07-03 2015-07-03 CoolMosfet T-type three-level topological circuit and inverter

Country Status (1)

Country Link
CN (1) CN105024573A (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103368427A (en) * 2012-04-05 2013-10-23 艾默生网络能源有限公司 Single-phase inverter and system thereof and three-phase inverter and system thereof
CN103490657A (en) * 2013-10-22 2014-01-01 安徽金峰新能源股份有限公司 Low-loss-type tri-electrical-level photovoltaic inverter
JP2014176281A (en) * 2013-03-13 2014-09-22 Meidensha Corp Control device and control method for three-level t-type npc power conversion apparatus
JP2015027170A (en) * 2013-07-26 2015-02-05 株式会社明電舎 Dc/ac conversion device
CN104578865A (en) * 2015-01-14 2015-04-29 东南大学 Tri-level four-leg T-shaped fault-tolerant converter and control method thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103368427A (en) * 2012-04-05 2013-10-23 艾默生网络能源有限公司 Single-phase inverter and system thereof and three-phase inverter and system thereof
JP2014176281A (en) * 2013-03-13 2014-09-22 Meidensha Corp Control device and control method for three-level t-type npc power conversion apparatus
JP2015027170A (en) * 2013-07-26 2015-02-05 株式会社明電舎 Dc/ac conversion device
CN103490657A (en) * 2013-10-22 2014-01-01 安徽金峰新能源股份有限公司 Low-loss-type tri-electrical-level photovoltaic inverter
CN104578865A (en) * 2015-01-14 2015-04-29 东南大学 Tri-level four-leg T-shaped fault-tolerant converter and control method thereof

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
YONG WANG, ET AL: "Diode-Free T-Type Three-Level Neutral-Point-Clamped Inverter for Low-Voltage Renewable Energy System", 《IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS》 *
YONG WANG,ET AL: "Mixed PWM for Dead-Time Elimination and Compensation in a Grid-Tied Inverter", 《IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS》 *

Similar Documents

Publication Publication Date Title
Barater et al. Performance evaluation of a three-level ANPC photovoltaic grid-connected inverter with 650-V SiC devices and optimized PWM
CN104883038B (en) A kind of half-bridge circuit and its method that half-bridge circuit driver is turned off using negative pressure
CN100596011C (en) Coupling inductance dual-buck full bridge inverter
TWI495248B (en) Ac-to-dc conversion apparatus and related control manner thereof
EP2706653A1 (en) Five-level power converter, controlling method and controlling device thereof
US7212063B2 (en) Half-bridge circuit with phase output
CN102005990B (en) H-bridge driving control circuit of motor
CN103560652B (en) Bidirectional switch circuit
CN105245096B (en) A kind of high-gain three winding cascade boost converter
CN103152017B (en) Delay circuit, the Circuits System with delay circuit and method thereof
CN103354427B (en) Single-phase inverter and three-phase inverter
CN201937493U (en) Four-level inverter
CN100459402C (en) Three level double voltage reducing type semi-bridge converter
CN103414347A (en) Bidirectional DC-DC converter and control method thereof
CN103490656B (en) Based on the carrier modulating method of four electrical level inverter topological structures of H bridge
TW200535983A (en) Synchronous rectifier circuits and method for utilizing common source inductance of the synchronous fet
CN205725436U (en) Gate driver circuit and include the bridge circuit of gate driver circuit
US9966875B2 (en) Five-level topology units and inverter thereof
CN1545195A (en) Positive and negative excitation bidirectional DC-DC converter
CN202261070U (en) H-bridge inverter circuit
CN100433526C (en) Three-level double step-down full bridge inverter
CN102611342B (en) three-level inverter
CN101902143B (en) Capacitor-clamped three-level dual-buck half-bridge inverter
KR880000142B1 (en) Output circuit
CN103715935B (en) A kind of loss based on modular multilevel voltage source converter determines method

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C41 Transfer of patent application or patent right or utility model
CB03 Change of inventor or designer information

Inventor after: Wang Yong

Inventor after: Zhang Chaolong

Inventor after: Xie Shangyu

Inventor after: Qiu Jinhui

Inventor after: Yang Fei

Inventor after: Jia Songjiang

Inventor after: Li Liqun

Inventor after: Liu Jun

Inventor after: Zhang Tao

Inventor after: Zhou Peizhong

Inventor before: Wang Yong

Inventor before: Xie Shangyu

COR Change of bibliographic data
TA01 Transfer of patent application right

Effective date of registration: 20160622

Address after: 110006 No. 18, Ningbo Road, Heping District, Liaoning, Shenyang

Applicant after: State Grid Liaoning Electric Power Co., Ltd.

Applicant after: Shanghai Jiao Tong University

Applicant after: Nanrui Relay Protection Electricity Co., Ltd., Nanjing

Applicant after: State Grid Corporation of China

Address before: 200240 Dongchuan Road, Shanghai, No. 800, No.

Applicant before: Shanghai Jiao Tong University

Applicant before: State Grid Corporation of China

Applicant before: Nanrui Relay Protection Electricity Co., Ltd., Nanjing

RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20151104