CN104993786A - Solar cell - Google Patents
Solar cell Download PDFInfo
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- CN104993786A CN104993786A CN201510279169.XA CN201510279169A CN104993786A CN 104993786 A CN104993786 A CN 104993786A CN 201510279169 A CN201510279169 A CN 201510279169A CN 104993786 A CN104993786 A CN 104993786A
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- 238000006243 chemical reaction Methods 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 16
- 230000003071 parasitic effect Effects 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 10
- 230000003287 optical effect Effects 0.000 claims description 7
- 230000003667 anti-reflective effect Effects 0.000 claims description 6
- 230000005684 electric field Effects 0.000 claims description 4
- 238000007639 printing Methods 0.000 claims description 4
- 238000011084 recovery Methods 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 230000005622 photoelectricity Effects 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 abstract 3
- 230000001939 inductive effect Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000001351 cycling effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02322—Optical elements or arrangements associated with the device comprising luminescent members, e.g. fluorescent sheets upon the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/1563—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators without using an external clock
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a solar cell. The solar cell comprises a light acquiring/switching module and a voltage increasing module. The voltage increasing module is formed by a voltage increasing circuit capable of reducing stress of a voltage switch. The voltage increasing circuit is comprises the voltage Vin input by the light acquiring/switching module, switch elements S1, S2, diodes D1, D2, an inductor L, an input capacitor C1, a middle capacitor C2 and an output capacitor Co. An input power supply generates input voltage Vin. The switch elements S1, S2 are respectively provided with stray capacitors CS1, CS2. By controlling on and off of the switch elements S1, S2, output voltage of the solar cell is increased and energy loss is reduced.
Description
[technical field]
The present invention relates to solar cell, is a kind of reduce voltage switch stress and output voltage is high-tension solar cell specifically.
[background technology]
In solar power system, what provide due to monolithic solar cell is all the direct current that voltage is lower, the need for electricity of existing power consumption equipment can not be met, grid-connected requirement can not be met, therefore need high voltage direct current low voltage and direct current being converted to actual needs.Thus the booster converter of high-gain, stable performance becomes a study hotspot, and this research has a very big significance the development promoting photovoltaic cell industry.
The most basic booster converter is single tube Boost, but the boosting scope of this converter is very limited, is difficult to the conversion requirement meeting high-gain, and switch tube voltage stress is output voltage.
At present, improving existing booster converter mainly contains following several:
The first utilizes transformer, adds the transformer of a high frequency in the middle of original DC-DC converter, realizes the object of high gain boost by changing transformer voltage ratio.Now, the conversion process of electric energy, in fact by original DC-to-DC, becomes DC-AC-AC-DC, and the energy conversion efficiency of whole system reduces.
The second utilizes coupling inductance, but coupling inductance complex structure, be unfavorable for industrial processes, be difficult to the consistency ensureing circuit, and switching device voltage stress can be caused too high, bring the impacts such as electromagnetic interference, cause converter working loss larger.
The third adds cascaded Boost unit, and unit number is more, and voltage gain is larger, but circuit elements number of packages is more, and structure is more complicated.
5th kind is crisscross parallel DC-DC converter, it comprises two inductance, two fly-wheel diodes, two power switch pipes, the drain electrode of the first power switch pipe is connected with one end of the anode of the first diode and the first inductance, the drain electrode of the second power switch pipe is connected with one end of the anode of the second diode and the second inductance, and the other end of the first inductance is connected with the other end of the second inductance.This boost interleaved parallel DC-DC converter output voltage gain is less, and the voltage stress of power switch pipe is comparatively large, and power switch pipe is hard switching work, and switching loss is comparatively large, and the reverse recovery current of fly-wheel diode is comparatively large, and reverse recovery loss is larger.
6th kind is soft switch circuit, and therefore, in recent years, researcher have studied some soft switch circuits in succession, mainly contains two classes: a class is the Sofe Switch realizing power switch pipe by being attached with the device such as source power switch and passive inductance, electric capacity; Another kind of is the Sofe Switch being realized power switch pipe by devices such as additional diode and passive inductance, electric capacity, as shown in Figure 1.Although the Sofe Switch that can realize power switch pipe of these two class methods, additional circuit is complicated, and can not reduce the voltage stress of power switch pipe.
Also have a kind of by electric capacity, diode, the DC boosting matrix circuit that triode is formed, as shown in Figure 2, namely the connection of out-put supply and matrix is only in one end of one end of the first row electric capacity and last column electric capacity, input power is only connected by triode in one end of first row electric capacity and one end of last column capacitance with matrix, with adjacent 2 row of a line electric capacity by 2 in the same way diodes in parallel and the diode of adjacent 2 row for sharing diode, each electric capacity series aiding connections of same row and in the end one end of a line electric capacity be connected with 2 diodes, it is 2 triodes conducting simultaneously that every electric capacity of same a line can be allowed to form charge circuit by suitable control method, and the triode one_to_one corresponding conducting of the triode and last column capacitance that are connected to first row electric capacity makes each row electric capacity be wheel current charge.But the elements such as the switch needed for this booster circuit, electric capacity, diode are too many, cause circuit structure complexity, cost too high.
[summary of the invention]
Technical problem to be solved by this invention, is for the defect in aforementioned background art and deficiency, provides a kind of solar cell of output HIGH voltage, improves output voltage, reduces energy loss.
The present invention includes light collection modular converter and boost module.
Described brilliance and modular converter comprise:
Semiconductor substrate;
Emitter layer, is formed on the sensitive surface of this semiconductor substrate, and and form pn between this semiconductor substrate and tie; Anti-reflective film, is formed on this emitter layer;
First electrode, it is connected with this emitter layer;
Second electrode, is formed on the shady face of this semiconductor substrate;
Light conversion layer, is formed on this shady face of this semiconductor substrate, has first light of long wavelength and launches second light with short wavelength, carry out photoelectricity and can change, and then improve the usefulness of this solar cell for this solar cell in order to reception.
Back surface electric field layer, is formed between this semiconductor substrate and this second electrode, and is connected with this second electrode and this semiconductor substrate.
Encapsulated layer, this encapsulated layer is by can the material of printing opacity be formed, and this can the material of printing opacity be glass.
Encapsulated layer is arranged at the first surface of this light conversion layer and second surface on one of them.
Light conversion layer is made up of an optical wavelength conversion material, and this optical wavelength conversion material is up-conversion, and this optical wavelength conversion material is phosphor.
Described boost module is made up of a kind of booster circuit reducing voltage switch stress;
Boost module of the present invention comprises the input voltage vin that light collection modular converter produces, switch element S1, S2, diode D1, D2, inductance L, input capacitance C1, intermediate capacitance C2 and output capacitance Co.Due to the characteristic of switching device, switch element S1, S2 have parasitic capacitance CS1, CS2 respectively.Concrete annexation is: the positive pole of input voltage vin connects one end of inductance L and the negative terminal of input capacitance C1, the collector electrode of the other end connecting valve element S1 of inductance L, the positive level of diode D1, the collector electrode of the emitter connecting valve element S2 of switch element S1, the emitter of switch element S2 connects the negative pole of input voltage vin, one end of intermediate capacitance C2 connects the negative electrode of diode D1, the emitter of other end connecting valve element S1, the anode of diode D2 connects the negative electrode of diode D1, the negative electrode of diode D2 connects the anode of input capacitance C1, one end of output capacitance Co connects the negative electrode of diode D2, the other end of output capacitance Co connects the negative pole of input voltage vin, and produce output voltage Vout at its two ends, switch element S1, S2 forms switch element branch road, diode D1, D2 forms diode branch, switch element branch road and diode branch conducting when synchronization is different.
Switch element S can be IGBT or MOSFET, and diode is fast recovery diode or Schottky diode;
Compared with prior art, useful effect of the present invention comprises:
A kind of solar cell provided by the invention, wherein light collection modular converter is worked by the first electrode and the second electrode simultaneously, adds the uptake of battery for light, increases battery efficiency; And described booster circuit is by the turn-on and turn-off of control switch element S1, S2, the voltage drop between switch element S1, S2 collector and emitter can be made while realizing boost function to be no more than 50% of output voltage, greatly reduce its voltage stress, and it is few relative to prior art switching device, reduce conduction loss and the switching loss of global switch pipe, further reduce the overall losses of converter, structure is simple, noenergy losser in circuit, improves the operating efficiency of solar cell.
[accompanying drawing explanation]
Fig. 1: existing crisscross parallel dc-dc converter circuit structure chart;
Fig. 2: existing DC boosting matrix circuit structure chart;
Fig. 3: the structural representation with boost module of the present invention;
Fig. 4: the booster circuit first stage working condition with low-voltage switches stress of the present invention;
Fig. 5: the booster circuit second stage working condition with low-voltage switches stress of the present invention;
Fig. 6: the booster circuit phase III working condition with low-voltage switches stress of the present invention;
Fig. 7: the booster circuit fourth stage working condition with low-voltage switches stress of the present invention;
Fig. 8: the booster circuit five-stage working condition with low-voltage switches stress of the present invention.
Fig. 9: light collection modular converter structural representation of the present invention
[embodiment]
For making technical scheme of the present invention clearly, below in conjunction with accompanying drawing and specific implementation process, the present invention is described in further detail.
A kind of solar cell that the application provides, described solar cell is connected and composed by a kind of light collection modular converter of double-side photic and booster circuit.
As shown in Figure 3, the booster circuit of low-voltage switches stress of the present invention comprises the voltage Vin of light collection modular converter input, switch element S1, S2, diode D1, D2, inductance L, input capacitance C1, intermediate capacitance C2 and output capacitance Co.Due to the characteristic of switching device, switch element S1, S2 have parasitic capacitance CS1, CS2 respectively.
3 structure of the present invention is elaborated by reference to the accompanying drawings, concrete annexation is: the positive pole of input voltage vin connects one end of inductance L and the negative terminal of input capacitance C1, the collector electrode of the other end connecting valve element S1 of inductance L, the positive level of diode D1, the collector electrode of the emitter connecting valve element S2 of switch element S1, the emitter of switch element S2 connects the negative pole of input voltage vin, one end of intermediate capacitance C2 connects the negative electrode of diode D1, the emitter of other end connecting valve element S1, the anode of diode D2 connects the negative electrode of diode D1, the negative electrode of diode D2 connects the anode of input capacitance C1, one end of output capacitance Co connects the negative electrode of diode D2, the other end of output capacitance Co connects the negative pole of input voltage vin, and produce output voltage Vout at its two ends.
Below in conjunction with accompanying drawing 4-8, the working condition of this booster circuit is described:
First stage, as shown in Figure 4: the equal conducting of switch element S1, S2, switching branches is in conducting state, and inductive current IL will flow through switch element S1, S2, and electric current flows to the negative pole of input voltage vin through inductance L from the positive pole of input voltage vin; Without diode D1, D2, diode branch is in off-state;
Second stage, as shown in Figure 5: switch element S1 conducting, switch element S2 turns off, due to the shutoff of switch element S2, switching branches is caused to be in off-state, inductive current will flow to input capacitance C1 and output capacitance Co by diode D1, D2, and diode branch is in conducting state, and capacitance state is now in parallel with output capacitance Co and diode D2 series arm after intermediate capacitance C2 and parasitic capacitance CS2 series connection; After reaching stable state, intermediate capacitance C2 and parasitic capacitance CS2 voltage separately will be 50% of the output voltage on output capacitance Co.
Phase III, as shown in Figure 6: switch element S1 turns off, switch element S2 turns off, due to the shutoff of switch element S1, S2, switching branches is caused still to be in off-state, inductive current will continue through diode D1, D2 and flow to input capacitance C1 and output capacitance Co, diode branch is still in conducting state, and capacitance state is now in parallel with output capacitance Co and diode D2 series arm after (1) intermediate capacitance C2 and parasitic capacitance CS2 series connection; (2) parasitic capacitance CS1 is in parallel with intermediate capacitance C2 and diode D1 series arm, after reaching stable state, intermediate capacitance C2 and parasitic capacitance CS2 voltage separately will be 50% of the output voltage on output capacitance Co, the voltage of parasitic capacitance CS1 is the voltage of intermediate capacitance C2, is also 50% of the output voltage on output capacitance Co.
Fourth stage, as shown in Figure 7: switch element S1 conducting, switch element S2 turns off, due to the shutoff of switch element S2, switching branches is caused still to be in off-state, suppose that this circuital current is in continuous mode, inductive current will continue through diode D1, D2 flows to input capacitance C1 and output capacitance Co, diode branch is still in conducting state, capacitance state is now: in parallel with output capacitance Co and diode D2 series arm after (1) intermediate capacitance C2 and parasitic capacitance CS2 series connection, (2) parasitic capacitance CS1 two ends are in short circuit state due to the conducting of switching tube S1, after reaching stable state intermediate capacitance C2 and parasitic capacitance CS2 voltage separately by for the output voltage on output capacitance Co 50%, parasitic capacitance CS1 voltage will be released and be down to 0,
Five-stage, as shown in Figure 8: switch element S1 conducting, switch element S2 conducting, due to the conducting of switch element S1.S2, switching branches is caused to get back to conducting state, inductive current IL will flow through switch element S1, S2, and electric current flows to the negative pole of input voltage vin through inductance L from the positive pole of input voltage vin; Because diode D1, D2 bear reverse pressure drop, diode branch will become and will be in off state, and capacitance state is now: (1) intermediate capacitance C2 is temporarily in suspended state (2) parasitic capacitance CS2 two ends due to the conducting of switching tube S2 and is in short circuit state; After reaching stable state, intermediate capacitance C2 temporarily because voltage can not suddenly change will will be released and will be down to 0 for 50%, parasitic capacitance CS1 of output voltage on output capacitance Co, the voltage of CS2;
Above-mentioned stage repetitive cycling is the course of work of this booster circuit, in whole process, voltage between switch element S1, S2 collector and emitter is no more than 50% of output voltage, greatly reduce its voltage stress, and few relative to prior art switching device, reduce conduction loss and the switching loss of global switch pipe, further reduce the overall losses of converter, structure is simple, and noenergy losser in circuit, improves the operating efficiency of converter.
As shown in Figure 9, as shown in the figure, light collection modular converter is the light collection modular converter of a double-side photic, and it receives light by the first sensitive surface a and/or the second sensitive surface b and be converted to electric energy.The structure of light collection modular converter is by the first light conversion layer 6, encapsulated layer 8, first electrode 4, first anti-reflective film 2, emitter layer 1, semiconductor substrate 0, back surface electric field layer 0b, second anti-reflective film 3, second electrode 5 and the second light conversion layer 7 formed, wherein, and the first electrode 4, first anti-reflective film 2, emitter layer 1, semiconductor substrate 60, back surface electric field layer 60 ', the structure of the second anti-reflective film 3 and the second electrode 5, function and manufacturing process and previous embodiment similar, therefore repeat no more, in the present embodiment, the encapsulated layer 8 of light collection modular converter is arranged on the second surface 6b of the first light conversion layer 6 and second surface 7b of the second light conversion layer 7 respectively, namely after first semiconductor structure 9 being carried out packaging operation, coated encapsulated layer 8 on the outer surface of semiconductor structure 9 again, finally on the first sensitive surface a and the second sensitive surface b, be coated with the first light conversion layer 6 and the second light conversion layer 7 respectively again, the difference of itself and previous embodiment is only that light collection modular converter arranges light conversion layer after packaging again, as can be seen here, formed after the light conversion layer of light collection modular converter is not limited to before packaging or encapsulates, it can apply situation and adjust, not as limit according to actual.
In sum, light collection modular converter provided by the present invention comprises a light conversion layer, by light conversion layer Absorbable rod first wave length the first light and launch the characteristic of second light with second wave length, and by the characteristic of light conversion layer according to conversion or lower conversion on it, be arranged at shady face or phototropic face respectively, to carry out the conversion of optical wavelength, make light collection modular converter can more effective utilization originally cannot by the spectral region used, effectively to improve the usefulness of light collection modular converter, ultraviolet light and infrared light cannot be used to solve traditional light collection modular converter, and the defect making the usefulness of light collection modular converter limited.
Finally should be noted that: above embodiment is only in order to illustrate that technical scheme of the present invention is not intended to limit, although with reference to above-described embodiment to invention has been detailed description, those of ordinary skill in the field are to be understood that: still can modify to the specific embodiment of the present invention or equivalent replacement, and not departing from any amendment of spirit and scope of the invention or equivalent replacement, it all should be encompassed in the middle of right of the present invention.
Claims (4)
1. a solar cell, it comprises light collection modular converter and boost module, it is characterized in that:
Described light collection modular converter comprises
Semiconductor substrate;
Emitter layer, is formed on the sensitive surface of this semiconductor substrate, and and form pn between this semiconductor substrate and tie; Anti-reflective film, is formed on this emitter layer;
First electrode, it is connected with this emitter layer;
Second electrode, is formed on the shady face of this semiconductor substrate;
Light conversion layer, is formed on this shady face of this semiconductor substrate, has first light of long wavelength and launches second light with short wavelength, carry out photoelectricity and can change, and then improve the usefulness of this solar cell for this solar cell in order to reception;
Back surface electric field layer, is formed between this semiconductor substrate and this second electrode, and is connected with this second electrode and this semiconductor substrate;
Encapsulated layer, this encapsulated layer is by can the material of printing opacity be formed, and this can the material of printing opacity be glass;
Encapsulated layer is arranged at the first surface of this light conversion layer and second surface on one of them;
Light conversion layer is made up of an optical wavelength conversion material, and this optical wavelength conversion material is up-conversion, and this optical wavelength conversion material is phosphor;
Described boost module is made up of a kind of booster circuit reducing voltage switch stress;
The booster circuit of described reduction voltage switch stress comprises the voltage Vin inputted by light collection modular converter, switch element S1, S2, diode D1, D2, inductance L, input capacitance C1, intermediate capacitance C2 and output capacitance Co, light collection modular converter produces input voltage vin, switch element S1, S2 has parasitic capacitance CS1 respectively, CS2, switch element S1, S2 forms switch element branch road, diode D1, D2 forms diode branch, the positive pole of input voltage vin connects one end of inductance L and the negative terminal of input capacitance C1, the collector electrode of the other end connecting valve element S1 of inductance L, the positive level of diode D1, the collector electrode of the emitter connecting valve element S2 of switch element S1, the emitter of switch element S2 connects the negative pole of input voltage vin, one end of described intermediate capacitance C2 connects the negative electrode of diode D1, the emitter of other end connecting valve element S1, the anode of diode D2 connects the negative electrode of diode D1, the negative electrode of diode D2 connects the anode of input capacitance C1, one end of output capacitance Co connects the negative electrode of diode D2, the other end of output capacitance Co connects the negative pole of input voltage vin, and produce output voltage Vout at its two ends, switching branches and diode branch conducting when synchronization is different.
2. solar cell according to claim 1, is characterized in that: described switching tube S1, S2 are IGBT or MOSFET or other high-power switch devices.
3. solar cell according to claim 1, is characterized in that: described diode D1, D2 are fast recovery diode or Schottky diode.
4. solar cell according to claim 1, it is characterized in that: by the turn-on and turn-off of control switch element S1, S2, while realizing boost function, make the voltage drop between switch element S1, S2 collector and emitter be no more than 50% of output voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510279169.XA CN104993786A (en) | 2014-12-12 | 2015-05-27 | Solar cell |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2014108580170 | 2014-12-12 | ||
| CN201410858017 | 2014-12-12 | ||
| CN201510279169.XA CN104993786A (en) | 2014-12-12 | 2015-05-27 | Solar cell |
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| CN104993786A true CN104993786A (en) | 2015-10-21 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018196804A1 (en) | 2017-04-26 | 2018-11-01 | Huawei Technologies Co., Ltd. | Converter apparatus and method with auxiliary transistor for protecting components at startup |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018196804A1 (en) | 2017-04-26 | 2018-11-01 | Huawei Technologies Co., Ltd. | Converter apparatus and method with auxiliary transistor for protecting components at startup |
| US10199924B2 (en) | 2017-04-26 | 2019-02-05 | Futurewei Technologies, Inc. | Converter apparatus and method with auxiliary transistor for protecting components at startup |
| CN110574269A (en) * | 2017-04-26 | 2019-12-13 | 华为技术有限公司 | Converter arrangement and method with an auxiliary transistor for protecting components at startup |
| US10673318B2 (en) | 2017-04-26 | 2020-06-02 | Futurewei Technologies, Inc. | Converter apparatus and method with auxiliary transistor for protecting components at startup |
| CN110574269B (en) * | 2017-04-26 | 2021-11-19 | 华为数字能源技术有限公司 | Converter arrangement and method with an auxiliary transistor for protecting components at startup |
| CN114221538A (en) * | 2017-04-26 | 2022-03-22 | 华为数字能源技术有限公司 | Converter arrangement and method with an auxiliary transistor for protecting components at startup |
| CN114221538B (en) * | 2017-04-26 | 2024-04-09 | 华为数字能源技术有限公司 | Converter device and method with auxiliary transistor for protecting component at start-up |
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