CN104992828A - Low-partial-discharge-value single-structure-based mutual inductor and manufacturing method thereof - Google Patents
Low-partial-discharge-value single-structure-based mutual inductor and manufacturing method thereof Download PDFInfo
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- CN104992828A CN104992828A CN201510476727.1A CN201510476727A CN104992828A CN 104992828 A CN104992828 A CN 104992828A CN 201510476727 A CN201510476727 A CN 201510476727A CN 104992828 A CN104992828 A CN 104992828A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 45
- 239000011111 cardboard Substances 0.000 claims description 21
- 239000000123 paper Substances 0.000 claims description 21
- 238000004804 winding Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 238000003466 welding Methods 0.000 claims description 3
- 230000005684 electric field Effects 0.000 abstract description 12
- 238000012360 testing method Methods 0.000 abstract description 8
- 230000007704 transition Effects 0.000 abstract 1
- 238000010276 construction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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Abstract
The invention relates to a low-partial-discharge-value single-structure-based mutual inductor and a manufacturing method thereof. The low-partial-discharge-value single-structure-based mutual inductor comprises a piece of semiconductor crepe paper 2, a P1 terminal 3, a conducting rod 4, a mutual inductor coil 6, and a P2 terminal 7 and is characterized in that the conducting rod 4 is arranged below a primary terminal; a C-shaped semiconductor paper plate 5 is arranged at the inner side of the conducting rod 4 and is fixed on the conducting rod 4 by the semiconductor crepe paper 2; and the mutual inductor coil 6 is sleeved into a primary coil of the mutual inductor. The mutual inductor has the following advantages: the primary coil of the mutual inductor forms a uniform electric field under a high voltage and electric field intensities of all parts of the mutual inductor are distributed uniformly; the field intensity transition is in a smooth mode; no field intensity distortion phenomenon occurs; when the partial discharge value is measured in a test voltage state, the apparent discharge magnitude is low; and the partial discharge value inside the mutual inductor is reduced in a high voltage state.
Description
Technical field
What the present invention relates to is single turn structure instrument transformer and the manufacture method that value is put in a kind of low office, belongs to instrument transformer technical field.
Background technology
In instrument transformer production and use procedure, the quality that office puts not only has reacted the quality of instrument transformer interior quality, more involves the useful life of instrument transformer, so mutual inductance general ability problem of putting is the problem that instrument transformer manufacturer and user compare concern always.Along with the development of technology, many instrument transformers can both reach lower office and put value, but still have the mutual inductance general ability of some structures to put value and there is certain problem, instrument transformer as some single turn structures is put the high experimental tests current political situation to put value higher carrying out office, user's requirement can not be met, sometimes even can scrap because of can not GB be met, not only waste material, make also can not be guaranteed the delivery date of product simultaneously.
Existing single turn instrument transformer structure, this kind of structure only to instrument transformer terminal (by P1 terminal 3, P2 terminal 7 is formed) and a winding forming of conducting rod 4 to do electric fields uniform coated, any shielding or electric field treatment measure is not done between P1 outlet terminal 3 and P2 outlet terminal 7, under action of high voltage, one time winding will there will be Electric Field Distribution inequality, especially there is larger distortion along with the sudden change of medium in electric field between two outlet terminals, also there is the unfavorable conditions such as most advanced and sophisticated simultaneously, when a terminal applies voltage, electric interpolar discharge will be there is because of the distortion of the uneven of electric field and electric field near a terminal, creeping discharge, the multiple discharge scenario such as point discharge.Under test voltage state, measure its office when putting value, its Apparent discharge magnitude is comparatively large, after repeatedly processing, gets rid of surface and waits and still can not reduce its office during other factors and put value, as shown in Figure 3 instrument transformer.
Summary of the invention
What the present invention proposed is single turn structure instrument transformer and the manufacture method that value is put in a kind of low office, and its object is intended to the above-mentioned defect overcome existing for prior art, and the quality that raising office puts, meets user's requirement.
Technical solution of the present invention: the single turn structure instrument transformer of value is put in low office, comprise semiconductor crimped paper 2, P1 terminal 3, conducting rod 4, mutual inductor coil 6, P2 terminal 7, it is characterized in that the below of a terminal is provided with conducting rod 4, the inner side of electric pole 4 is provided with C shape semiconductor cardboard 5; C shape semiconductor cardboard 5 is fixed on conducting rod 4 by semiconductor crimped paper 2; Mutual inductor coil 6 is inserted in instrument transformer winding.
Its manufacture method, comprises the steps:
(1) make C type semiconductor cardboard 5, comprise,
1) first semiconductor crimped paper 2 is wrapped on hard insulating board 1 with the canoe of half lap one deck;
2) ensure that whole hard insulating board 1 is covered by semiconductor crimped paper 2 when being wound around;
3) width of hard insulating board 1 is consistent with a termination width, stand-by after completing;
4) instrument transformer P1 terminal 3 and P2 terminal 7 are welded with conducting rod 4, after completing welding, mutual inductor coil 6 is inserted in instrument transformer winding;
(2) first with semiconductor crimped paper 2, integral coating is carried out to a terminal and conducting rod 4;
(3) the C type semiconductor cardboard 5 after completing is placed the P1 terminal 3 of instrument transformer and the back side of P2 terminal 7;
(4) with semiconductor crimped paper 2, C type semiconductor cardboard 5 and a winding of instrument transformer are done integral coating again.
Advantage of the present invention: make whole instrument transformer winding form a uniform electric field under high voltages, instrument transformer device body each position electric field strength is evenly distributed, field intensity is excessively mild, situation that field intensity is undistorted.Under test voltage state, measure its office when putting value, its Apparent discharge magnitude is less, and value is put in the office that can reduce instrument transformer inside under high-voltage state.
Accompanying drawing explanation
Fig. 1 is the concise and to the point construction drawing of semiconductor cardboard;
Fig. 2 is the structural representation that the single turn structure instrument transformer of value is put in low office;
Fig. 3 original single turn instrument transformer structural representation.
In figure 1 is hard insulating board, and 2 is semiconductor crimped paper, and 3 is P1 terminals, and 4 is conducting rods, and 5 is C type semiconductor cardboards, and 6 is mutual inductor coils, and 7 is P2 terminals.
Embodiment
As shown in drawings, the single turn structure instrument transformer of value is put in low office, comprise semiconductor crimped paper 2, P1 terminal 3, conducting rod 4, mutual inductor coil 6, P2 terminal 7, it is characterized in that the below of a terminal is provided with conducting rod 4, the inner side of electric pole 4 is provided with C shape semiconductor cardboard 5; C shape semiconductor cardboard 5 is fixed on conducting rod 4 by semiconductor crimped paper 2; Mutual inductor coil 6 is inserted in instrument transformer winding.
A described terminal is made up of P1 outlet terminal 3 and P2 outlet terminal 7;
Described C shape semiconductor cardboard 5 is entwined by hard insulating board 1, semiconductor crimped paper 2, and the width of described hard insulating board 1 is consistent with a termination width;
Described P1 terminal 3 and P2 terminal 7 weld with conducting rod 4;
Described instrument transformer winding is made up of P1 terminal 3, P2 terminal 7, conducting rod 4;
The manufacture method of the single turn structure instrument transformer of value is put in low office, comprises the steps:
(1) make C type semiconductor cardboard 5, comprise,
1) first semiconductor crimped paper 2 is wrapped on hard insulating board 1 with the canoe of half lap one deck;
2) ensure that whole hard insulating board 1 is covered by semiconductor crimped paper 2 when being wound around;
3) width of hard insulating board 1 is consistent with a termination width, and stand-by after completing, one time terminal comprises P1 outlet terminal and P2 outlet terminal,
4) instrument transformer P1 terminal 3 and P2 terminal 7 are welded with conducting rod 4, be inserted in by mutual inductor coil 6 in instrument transformer winding after completing welding, instrument transformer winding is made up of P1 terminal 3, P2 terminal 7, conducting rod 4; As shown in Figure 1;
(2) first integral coating is carried out with semiconductor crimped paper 2 pairs of instrument transformers terminal and conducting rod 4;
(3) the C type semiconductor cardboard 5 after completing is placed the back side of instrument transformer P1 terminal 3 and P2 terminal 7;
(4) C type semiconductor cardboard 5 is fixed on the back side of P1 terminal 3 and P2 terminal 7;
(5) with semiconductor crimped paper 2, C type semiconductor cardboard 5 and a winding of instrument transformer are done integral coating again;
(6) after completing above-mentioned steps, C type semiconductor cardboard 5 and instrument transformer winding form a uniform electric field under high voltages, and instrument transformer device body each position electric field strength is evenly distributed, and field intensity is excessively mild, simultaneously the undistorted situation of field intensity.Under test voltage state, measure its office when putting value, its Apparent discharge magnitude is less, as shown in Figure 2.
Concrete case study on implementation: make 5 35kV current transformers by Fig. 2 new construction and carry out local discharge test, during local discharge test, high voltage is applied to P1 terminal 3 or P2 terminal 7, the outlet terminal of mutual inductor coil 6 connects earth connection, test by GB partial discharge program, power-frequency voltage to instrument transformer during rated voltage is applied to instrument transformer terminal 3 or 7 and does not occur visual partial discharge situation, continue to be applied to 1.5 times of rated voltages to start to occur electric discharge, continue to boost to specified industrial frequency withstand voltage 80% keeps 60S, start step-down, its Apparent discharge magnitude is detected when being depressurized to 1.2Um/ √ 3 voltage, its result is 1-5pC, be better than GB.
This current transformer new construction of experiment results proved is far superior to old structure in partial discharge performance.
Claims (7)
1. the single turn structure instrument transformer of value is put in low office, comprises semiconductor crimped paper, P1 terminal, conducting rod, mutual inductor coil, P2 terminal, it is characterized in that the below of a terminal is provided with conducting rod, and the inner side of electric pole is provided with C shape semiconductor cardboard; C shape semiconductor cardboard is fixed on conducting rod by semiconductor crimped paper; Mutual inductor coil is inserted in instrument transformer winding.
2. the single turn structure instrument transformer of value is put in low office according to claim 1, it is characterized in that a described terminal is made up of P1 outlet terminal and P2 outlet terminal.
3. the single turn structure instrument transformer of value is put in low office according to claim 1, it is characterized in that described C shape semiconductor cardboard is entwined by hard insulating board, semiconductor crimped paper.
4. the single turn structure instrument transformer of value is put in low office according to claim 3, it is characterized in that the width of described hard insulating board is consistent with a termination width.
5. the single turn structure instrument transformer of value is put in low office according to claim 2, it is characterized in that described P1 terminal and P2 terminal weld with conducting rod.
6. the single turn structure instrument transformer of value is put in low office according to claim 1, it is characterized in that described instrument transformer winding is made up of P1 terminal, P2 terminal, conducting rod.
7. the manufacture method of the single turn structure instrument transformer of value is put in low office as claimed in claim 1, it is characterized in that comprising the steps:
(1) make C type semiconductor cardboard, comprise,
1) first semiconductor crimped paper is wrapped on hard insulating board with the canoe of half lap one deck;
2) ensure that whole hard insulating board is covered by semiconductor crimped paper when being wound around;
3) width of hard insulating board is consistent with a termination width, stand-by after completing;
4) instrument transformer P1 terminal and P2 terminal are welded with conducting rod, after completing welding, mutual inductor coil is inserted in instrument transformer winding;
(2) first with semiconductor crimped paper, integral coating is carried out to a terminal and conducting rod;
(3) the C type semiconductor cardboard after completing is placed the P1 terminal of instrument transformer and the back side of P2 terminal;
(4) with semiconductor crimped paper, a winding of C type semiconductor cardboard and instrument transformer is done integral coating again.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510476727.1A CN104992828B (en) | 2015-08-06 | 2015-08-06 | Low-partial-discharge-value single-structure-based mutual inductor and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510476727.1A CN104992828B (en) | 2015-08-06 | 2015-08-06 | Low-partial-discharge-value single-structure-based mutual inductor and manufacturing method thereof |
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| Publication Number | Publication Date |
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| CN104992828A true CN104992828A (en) | 2015-10-21 |
| CN104992828B CN104992828B (en) | 2017-04-12 |
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| CN201510476727.1A Active CN104992828B (en) | 2015-08-06 | 2015-08-06 | Low-partial-discharge-value single-structure-based mutual inductor and manufacturing method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106098354A (en) * | 2016-08-24 | 2016-11-09 | 河南森源电气股份有限公司 | Single-turn transformer and a winding thereof and a winding manufacture method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0063636A1 (en) * | 1981-04-28 | 1982-11-03 | Sprecher + Schuh AG | Current transformer with annular case to be built in a metal cast high-tension switchgear installation |
| CN201311838Y (en) * | 2008-11-14 | 2009-09-16 | 厦门大一互科技有限公司 | Current transformer with primary shielding for SF6 gas cabinets |
| CN201549358U (en) * | 2009-10-28 | 2010-08-11 | 大连中广互感器制造有限公司 | High-capacity voltage transformer capable of reducing local electric discharge |
| CN202749216U (en) * | 2012-06-29 | 2013-02-20 | 天津市滨海纽泰克电气有限公司 | Discharge-preventing shielding device for current transformer |
| CN203799857U (en) * | 2014-03-20 | 2014-08-27 | 大连中广互感器制造有限公司 | Low-partial-discharge high-capacity post type current transformer |
| CN204927009U (en) * | 2015-08-06 | 2015-12-30 | 河南森源电气股份有限公司 | Single circle structure mutual -inductor of low office value of putting |
-
2015
- 2015-08-06 CN CN201510476727.1A patent/CN104992828B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0063636A1 (en) * | 1981-04-28 | 1982-11-03 | Sprecher + Schuh AG | Current transformer with annular case to be built in a metal cast high-tension switchgear installation |
| CN201311838Y (en) * | 2008-11-14 | 2009-09-16 | 厦门大一互科技有限公司 | Current transformer with primary shielding for SF6 gas cabinets |
| CN201549358U (en) * | 2009-10-28 | 2010-08-11 | 大连中广互感器制造有限公司 | High-capacity voltage transformer capable of reducing local electric discharge |
| CN202749216U (en) * | 2012-06-29 | 2013-02-20 | 天津市滨海纽泰克电气有限公司 | Discharge-preventing shielding device for current transformer |
| CN203799857U (en) * | 2014-03-20 | 2014-08-27 | 大连中广互感器制造有限公司 | Low-partial-discharge high-capacity post type current transformer |
| CN204927009U (en) * | 2015-08-06 | 2015-12-30 | 河南森源电气股份有限公司 | Single circle structure mutual -inductor of low office value of putting |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106098354A (en) * | 2016-08-24 | 2016-11-09 | 河南森源电气股份有限公司 | Single-turn transformer and a winding thereof and a winding manufacture method |
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| CN104992828B (en) | 2017-04-12 |
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