CN104979303A - High-density integrated circuit package structure - Google Patents
High-density integrated circuit package structure Download PDFInfo
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- CN104979303A CN104979303A CN201510399162.1A CN201510399162A CN104979303A CN 104979303 A CN104979303 A CN 104979303A CN 201510399162 A CN201510399162 A CN 201510399162A CN 104979303 A CN104979303 A CN 104979303A
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- lead frame
- plastic
- outer pin
- integrated circuit
- package structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
The invention discloses a high-density integrated circuit package structure which comprises a metallic lead frame formed by a lead frame basis, an inner lead pin and an outer pin. A chip is fixed on the lead frame basis, a micro connecting line is arranged between the chip and the inner lead pin, and the lead frame, the chip and the micro connecting line are sealed in a cuboid plastic-sealed body. The length A1 of the plastic-sealed body satisfies the relation of 5.13mm<=A1<=5.23mm, the width A2 of the plastic-sealed body satisfies the relation of 5.18mm<=A2<=5.38mm, and the thickness A3 of the plastic-sealed body satisfies the relation of 1.70mm<=A3<=1.90mm. The package structure is applicable to small and medium integrated circuits with special requirements on high frequency, high bandwidth, low noise and high heat conduction and electric conduction performance, and overcomes the defects that a conventional packaging structure is low in circuit integrated level, high in packaging cost and low in performance.
Description
Technical field
The invention belongs to integrated antenna package technical field, particularly a kind of high-density integrated circuit package structure.
Background technology
Integrated antenna package not only plays bonding point and the outside effect carrying out being electrically connected in integrated circuit (IC) chip; also for integrated circuit (IC) chip provides a reliable and stable operational environment; integrated circuit (IC) chip is played to the effect of machinery or environmental protection; thus the function that integrated circuit (IC) chip is brought into normal play, and ensure that it has high stability and reliability.In a word, the quality of integrated antenna package quality is very large on the impact of integrated circuits integral performance.Therefore, encapsulation should have stronger mechanical performance, good electric property, heat dispersion and chemical stability.
Although the physical structure of IC, application, I/O quantity variance are very large, the effect of IC encapsulation and function but difference are little, and the object of encapsulation is also suitable consistent.As " Protector of chip ", encapsulation serves several effects, is summed up and mainly contains following two:
(1) protect IC, makes it from physical damnification;
(2) redistribute I/O, obtain the pin pitch being easier to assemble process.Encapsulation also has some other secondary effect, such as provides one to be easier to standardized structure, for chip provides thermal dissipating path, avoids the soft error that chip generation α particle is caused, and provides a kind of structure of be more convenient for test and ageing test.Encapsulation can also be used for the interconnection of multiple IC.
Along with the development of laboratory (lab-on-chip) device on microelectromechanical systems (MEMS) device and sheet, encapsulation serves more effect: as limited chip and extraneous contact, meet the requirement of pressure reduction and meet the requirement of chemistry and atmospheric environment.The importance that recent years, people encapsulated IC and the view of ever-increasing function there occurs very large transformation, and IC encapsulation has become an important field the same as IC itself, this is because under many circumstances, the performance of IC is subject to the restriction of IC encapsulation.Therefore, people more and more emphasis on development IC encapsulation technology to tackle new challenge.
Along with people are to the continuous increase of smart machine functional requirement, the particularly rise of intelligent appliance, the more memory of product needed, the demand of the Flash Memory being package carrier with 208mil SOP8 (flash memory) sharply rises, in the past this chip block encapsulation market monopolize by the enterprise of Korea S, TaiWan, China, along with the rise of domestic design company, technical capability does not improve, domestic support holds this chip design art at present, but the encapsulation factory Technical comparing of encapsulation technology aspect Korea S, Taiwan is ripe, continent encapsulation factory catches up with.
At present, also seldom there is this 208mil expanded letter SOP8 encapsulation technology in domestic encapsulation factory, even if having also is that technology is perfect not, Reliability comparotive is low.And Taiwan enterprise have accumulated experience for many years in encapsulation foundry, comparative maturity and perfect in 208mil expanded letter SOP8 encapsulation technology, is in monopoly position in industry.Therefore this circuit encapsulating structure is developed and encapsulation technology is very necessary.
Summary of the invention
The object of the invention is, for above-mentioned the deficiencies in the prior art, to provide a kind of high-density integrated circuit package structure, to increase the reliability of circuit integration, reduction packaging cost and raising integrated antenna package in packaging body.
The technical solution adopted for the present invention to solve the technical problems is: a kind of high-density integrated circuit package structure, comprise by lead frame Ji Dao, the metal lead wire frame that interior lead-foot-line and outer pin are formed, lead frame Ji Dao is fixed with chip, micro-force sensing line is provided with between chip and interior lead-foot-line, described lead frame, chip and micro-force sensing linear sealing are in the plastic-sealed body of cuboid, the length A1 of described plastic-sealed body meets 5.13mm≤A1≤5.23mm, the width A2 of plastic-sealed body meets 5.18mm≤A2≤5.38mm, the thickness A 3 of plastic-sealed body meets 1.70mm≤A3≤1.90mm.
Described a kind of high-density integrated circuit package structure, the span B1 of its outer pin meets 7.70mm≤B1≤8.10mm, the spacing B2 of outer pin meets 1.250mm≤B2≤2.540mm, the length B3 of outer pin meets B3=(B1-A2)/2, the sole length A6 of outer pin meets 0.60mm≤A6≤0.70mm, and the width B 4 of outer pin meets 0.38mm≤B4≤0.48mm.
Described a kind of high-density integrated circuit package structure, the width A2 of its plastic-sealed body is 5.28mm, the thickness A 3 of plastic-sealed body is 1.80mm, the number B of described outer pin meets the integer of 6≤B≤40, the span B1 of outer pin is 7.90mm, the spacing B2 of outer pin is 1.27mm, the length B3 of outer pin is 1.31mm, the sole length A6 of outer pin is 0.65mm, the width B 4 of outer pin is 0.415mm, meets A1=5.23+ (B-8) × 1.8/2mm between the length A1 of plastic-sealed body and the number B of outer pin.
Described a kind of high-density integrated circuit package structure, the number B of its outer pin is eight, and the length A1 of plastic-sealed body is 5.23mm.
Described a kind of high-density integrated circuit package structure, its lead frame Ji Dao back side offers the pit of the multiple tapers in array distribution.
Described a kind of high-density integrated circuit package structure, has eight slots in its lead frame base island.
Described a kind of high-density integrated circuit package structure, in it, lead-foot-line is copper cash, copper alloy wire, iron wire, ferroalloy line, aluminum steel or aluminium alloy wire, interior lead-foot-line is also provided with the silver alloy layers that thickness is 17-76um, described silver alloy is that the In of Sn, 0.8-1.2% of Ge, 1.5-2.5% of Cu, 1.2-1.5% of 1.8-2.5% and the Ag of surplus form by mass percent.
Described a kind of high-density integrated circuit package structure, its lead frame Ji Dao is made up of copper, copper alloy, iron, ferroalloy, aluminum or aluminum alloy, it is the oxide layer of 17-76nm that the outer peripheral surface of lead frame Ji Dao is coated with a circle thickness, described oxide layer by sputtering sedimentation, this oxide layer by mass percent be the indium oxide of 45-50%, the zinc oxide of the tin oxide of 25-30%, the germanium oxide of 8-10% and surplus forms.
Described a kind of high-density integrated circuit package structure, its lead frame Ji Dao is 0.203mm to the distance on interior lead-foot-line top, the sinking distance of lead frame Ji Dao is 0.203mm, and the length of interior lead-foot-line is 0.659mm, and the encapsulating material that described plastic-sealed body uses is environment-friendly resin plastic packaging material.
Described a kind of high-density integrated circuit package structure, its size lead frame is long 300 ± 0.100mm, wide 100mm and thick 0.203mm, lead frame is provided with multiple installation unit, described installation unit broad ways arranges into 11 rows, line up 36 row along its length, be provided with multiple fabrication hole in the middle of described lead frame, described fabrication hole comprises elongated hole and square opening.
The invention has the beneficial effects as follows:
1, by the size design to plastic-sealed body length, make this encapsulated integrated circuit product can be used in having high frequency, high bandwidth, low noise, high heat conduction, high conduction performance the large scale integrated circuit of specific demand (as flash chip), overcome the shortcoming that encapsulating structure circuit integration of the prior art is low, packaging cost is high, performance is lower.
2, pass through the design of lead frame Ji Dao to interior lead-foot-line spacing, the electrical property of integrated circuit (IC) products is obviously improved, and the resultant effects such as production efficiency, production qualification rate, cost are better; The pit at the lead frame Ji Dao back side and slot can improve the bond strength of base island sealed plastic, avoid layering, improve the reliability of encapsulation.
3, the lead frame announced of the present invention, the installation unit quantity on every bar adds 106.25%, and installation unit area list only reduces 21.65%, and utilance >=71.4% of lead frame has saved material greatly; Plastic packaging production efficiency, up to >=80000/hour, increases production efficiency.
4, equipment of the present invention is automatic equipment, and during plastic packaging, every two panels framework forms one group, and plastic packaging material is filled from middle flash, has maximizedly saved plastic packaging material, plastic packaging material utilance >=70.0%, increases the utilance of plastic packaging material;
5, the Trim Molding technology that the present invention uses make Trim Molding production efficiency reach >=112000/hour, increase production efficiency;
6, after plastic packaging of the present invention, the angularity (warp) of lead frame, at below 10mm, enhances the reliability of product; Responsive grade (MSL) more than 3 grades of wetness; The durability (TCT) that packaging body expands with heat and contract with cold 500 times; High temperature accelerated aging test (HAST) 168 hours; High temperature life test (HTOL) 1000 hours.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention;
Fig. 2 is the structural representation of lead frame Ji Dao of the present invention;
Fig. 3 is the schematic diagram of lead frame Facad structure of the present invention;
Fig. 4 is the structural representation of lead frame plastic packaging of the present invention.
Wherein each token name is called: 1-outer pin, 2-plastic-sealed body, 3-interior lead-foot-line, 4-pit, 5-lead frame Ji Dao, 6-slot, 7-lead frame, 8-fabrication hole, 9-excessive glue groove.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in further detail.
As shown in Figure 1, it is the schematic diagram of a kind of high-density integrated circuit package structure of the present invention, comprise outer pin 1 and plastic-sealed body 2, the length A1 of plastic-sealed body 2 meets relation 5.13mm≤A1≤5.23mm, the width A2 of plastic-sealed body 2 meets relation 5.18mm≤A2≤5.38mm, the thickness A 3 of plastic-sealed body 2 meets relation 1.70mm≤A3≤1.90mm, the span B1 of outer pin 1 meets 3.123mm≤B1≤5.123mm, the span B1 of outer pin 1 meets 7.70mm≤B1≤8.10mm, the spacing B2 of outer pin 1 meets 1.250mm≤B2≤2.540mm, the length B3 of outer pin 1 meets B3=(B1-A2)/2, i.e. 1.26mm≤B3≤1.36mm, outer pin 1 sole A6 meets 0.60mm≤A6≤0.70mm, the width B 4 of outer pin 1 meets 0.38mm≤B4≤0.48mm, by the design to above size, make this encapsulated integrated circuit product can be used in having high frequency, high bandwidth, low noise, high heat conduction, high conduction performance the large scale integrated circuit of specific demand (as flash chip), overcome the shortcoming that encapsulating structure circuit integration of the prior art is low, packaging cost is high, performance is lower.
Further, the width A2 of described plastic-sealed body 2 is 5.28mm, the thickness A 3 of plastic-sealed body 2 is 1.80mm, the number B of described outer pin 1 meets the integer of 6≤B≤40, the span B1 of outer pin 1 is 7.90mm, the spacing B2 of outer pin 1 is 1.27mm, the length B3 of outer pin 1 is 1.31mm, the sole length A6 of outer pin 1 is 0.65mm, the width B 4 of outer pin 1 is 0.415mm, meet A1=5.23+ (B-8) × 1.8/2mm between the length A1 of the plastic-sealed body 2 and number B of outer pin 1, the number B of outer pin 1 is eight, and the length A1 of plastic-sealed body 2 is 5.23mm.
The structural representation on lead frame base island 5 of the present invention as shown in Figure 2, lead frame base island 5 is fixed with chip, micro-force sensing line is provided with between chip and interior lead-foot-line 3, described lead frame 7, chip and micro-force sensing linear sealing are in the plastic-sealed body 2 of cuboid, the encapsulating material that plastic-sealed body 2 uses is environment-friendly resin plastic packaging material, when lead frame base island 5 is 0.203mm to interior lead-foot-line 3 spacing, electrical property obviously improves, and the resultant effects such as production efficiency, production qualification rate, cost are better; The back side, lead frame base island 5 offers the pit 4 of the multiple pyramidal structures in array distribution, eight slots 6 are had in lead frame base island 5, pit 4 and slot 6 can improve the bond strength of base island sealed plastic, avoid layering, improve the reliability of encapsulation.
Further, described interior lead-foot-line 3 is copper cash, copper alloy wire, iron wire, ferroalloy line, aluminum steel or aluminium alloy wire, interior lead-foot-line 3 is also provided with the silver alloy layers that thickness is 17-76um, and wherein silver alloy is that the In of Sn, 0.8-1.2% of Ge, 1.5-2.5% of Cu, 1.2-1.5% of 1.8-2.5% and the Ag of surplus form by mass percent; Described lead frame base island 5 is made up of copper, copper alloy, iron, ferroalloy, aluminum or aluminum alloy, it is the oxide layer of 17-76nm that the outer peripheral surface on lead frame base island 5 is coated with a circle thickness, wherein oxide layer by sputtering sedimentation, this oxide layer by mass percent be the indium oxide of 45-50%, the zinc oxide of the tin oxide of 25-30%, the germanium oxide of 8-10% and surplus forms; Lead frame base island 5 is 0.203mm to the distance on interior lead-foot-line 3 top, and the sinking distance on lead frame base island 5 is 0.203mm, and the length of interior lead-foot-line 3 is 0.659mm.
Be illustrated in figure 3 the schematic diagram of lead frame Facad structure of the present invention, the length of lead frame 7 is 300.00 ± 0.100mm, width is 100.00 ± 0.050mm, thick 0.203mm, lead frame 7 is provided with multiple installation unit, described installation unit arranges into 11 rows along the Width of lead frame 7, length direction along lead frame 7 lines up 36 row, line up the IDF matrix type structure of 11x36, 39 chips can be encapsulated during plastic packaging, from first row installation unit, often adjacent two row installation units form a construction unit, and the construction unit of neighbouring two row is together interlaced, frame base between about construction unit is that be provided with multiple elongated hole with square fabrication hole 8, step pitch between adjacent installation unit is 6.436mm, step pitch between adjacent two construction units is 16.622mm.Lead frame of the present invention and the interior size lead frame arranged of current industry contrast, as shown in table 1:
Table 1 lead frame of the present invention and existing 6 row lead frame size comparison
| Project | Overall length (mm) | Beam overall (mm) | Only/bar | Area (mm 2/ only) |
| The design's lead frame | 300.00 | 100.00 | 396 | 75.76 |
| Existing 6 row lead frames | 238.00 | 78.00 | 192 | 96.69 |
As can be seen from Table 1, arrange compared with 208mil SOP8 package lead mount structure with existing 6, the lead frame described in the design, the installation unit quantity on every bar adds 106.25%, and installation unit area list only reduces 21.65%, has saved raw material.
Be illustrated in figure 4 the structural representation of lead frame plastic packaging of the present invention, during plastic packaging, the centre of every two panels lead frame 7 is provided with square excessive glue groove 9, equipment of the present invention is automatic equipment, during plastic packaging, every two panels framework forms one group, plastic packaging material is filled from middle flash, has maximizedly saved plastic packaging material.
In lead frame structure of the present invention, be distributed with 11 row lead frame unit, the lead frame unit in so every bar lead frame structure amounts to 396, can fill 396 circuit.Can calculate by output 8 package lead mount structures with every mould, packaged battery way can reach 3168.
Table 2 lead frame of the present invention and existing 6 row lead frame plastic packaging production efficiencys contrast
| Project | Only/bar | Only/mould |
| The design's lead frame | 396 | 3168 |
| Existing 6 row lead frames | 192 | 1536 |
Simultaneously in the utilance of plastic packaging material, the present invention also will significantly improve, the consumption of the every mold sealing material of common 6 row's framework is 2598.4g/ mould at present, and plastic package method used in the present invention is 2923.2g/ mould, thus plastic packaging material utilance as shown in table 3 can be obtained, adopt method of the present invention, the utilance of plastic packaging material can improve 13.8%, and thus technique effect is obvious.Because plastic packaging equipment of the present invention is automation equipment, per hour can the framework of plastic packaging 12 mould, production efficiency is up to more than 36950/hour.
Table 3 lead frame of the present invention and existing 6 row lead frame plastic packaging production efficiencys contrast
| Project | Only/mould | Plastic packaging material (g)/only | Plastic packaging material (g)/mould | Utilance |
| The design's lead frame | 396 | 4.2 | 2105.6 | 78.9％ |
| Existing 6 row lead frames | 192 | 4.2 | 1240.6 | 65.1％ |
As Fig. 3 can find out that frame structure of the present invention is every two row one group, totally 11 rows, for boosting productivity, adapt to large matrix high density production mode, provide a kind of Trim Molding technology, cut in muscle method of the present invention, die-cut 4 row frame units while of each, so each die-cut lead frame unit amounts to 44, can calculate for die-cut 55 times with often per minute, die-cut lead frame element number then often per minute is 2420, and 6 common at present row lead frames, die-cut 24 at every turn, die-cut 1320 per minute, therefore 83.3% can be improved cutting the present invention in muscle efficiency.
The present invention compared with prior art has following useful technique effect:
1. framework utilance >=71.4%, has saved material greatly;
2. plastic packaging material utilance >=70.0%, increases the utilance of plastic packaging material;
3. plastic packaging production efficiency is up to >=80000/hour, increases production efficiency;
4. Trim Molding production efficiency reach >=112000/hour, increase production efficiency;
5. after plastic packaging, the angularity (warp) of lead frame, at below 10mm, enhances the reliability of product;
6. responsive grade (MSL) more than 3 grades of wetness;
7. the packaging body durability (TCT) of expanding with heat and contract with cold 500 times;
8. high temperature accelerated aging test (HAST) 168 hours;
9. high temperature life test (HTOL) 1000 hours
Above-described embodiment is illustrative principle of the present invention and effect thereof only; and the embodiment that part is used, for the person of ordinary skill of the art, without departing from the concept of the premise of the invention; can also make some distortion and improvement, these all belong to protection scope of the present invention.
Claims (10)
1. a high-density integrated circuit package structure, it is characterized in that: comprise by lead frame Ji Dao (5), the metal lead wire frame (7) that interior lead-foot-line (3) and outer pin (1) are formed, (5) are fixed with chip to lead frame Ji Dao, micro-force sensing line is provided with between chip and interior lead-foot-line (3), described lead frame (7), chip and micro-force sensing linear sealing are in the plastic-sealed body (2) of cuboid, the length A1 of described plastic-sealed body (2) meets 5.13mm≤A1≤5.23mm, the width A2 of plastic-sealed body (2) meets 5.18mm≤A2≤5.38mm, the thickness A 3 of plastic-sealed body (2) meets 1.70mm≤A3≤1.90mm.
2. a kind of high-density integrated circuit package structure according to claim 1, it is characterized in that, the span B1 of described outer pin (1) meets 7.70mm≤B1≤8.10mm, the spacing B2 of outer pin (1) meets 1.250mm≤B2≤2.540mm, the length B3 of outer pin (1) meets B3=(B1-A2)/2, the sole length A6 of outer pin (1) meets 0.60mm≤A6≤0.70mm, and the width B 4 of outer pin (1) meets 0.38mm≤B4≤0.48mm.
3. a kind of high-density integrated circuit package structure according to claim 1 and 2, it is characterized in that, the width A2 of described plastic-sealed body (2) is 5.28mm, the thickness A 3 of plastic-sealed body (2) is 1.80mm, the number B of described outer pin (1) meets the integer of 6≤B≤40, the span B1 of outer pin (1) is 7.90mm, the spacing B2 of outer pin (1) is 1.27mm, the length B3 of outer pin (1) is 1.31mm, the sole length A6 of outer pin (1) is 0.65mm, the width B 4 of outer pin (1) is 0.415mm, A1=5.23+ (B-8) × 1.8/2mm is met between the length A1 of plastic-sealed body (2) and the number B of outer pin (1).
4. a kind of high-density integrated circuit package structure according to claim 3, is characterized in that, the number B of described outer pin (1) is eight, and the length A1 of plastic-sealed body (2) is 5.23mm.
5. a kind of high-density integrated circuit package structure according to any one of Claims 1-4, is characterized in that, described lead frame Ji Dao (5) back side offers the pit (4) of the multiple tapers in array distribution.
6. a kind of high-density integrated circuit package structure according to claim 5, is characterized in that, has eight slots (6) in described lead frame Ji Dao (5).
7. a kind of high-density integrated circuit package structure according to any one of claim 1 or 2 or 4 or 6, it is characterized in that, described interior lead-foot-line (3) is copper cash, copper alloy wire, iron wire, ferroalloy line, aluminum steel or aluminium alloy wire, interior lead-foot-line (3) is also provided with the silver alloy layers that thickness is 17-76um, and described silver alloy is that the In of Sn, 0.8-1.2% of Ge, 1.5-2.5% of Cu, 1.2-1.5% of 1.8-2.5% and the Ag of surplus form by mass percent.
8. a kind of high-density integrated circuit package structure according to claim 7, it is characterized in that, described lead frame Ji Dao (5) is made up of copper, copper alloy, iron, ferroalloy, aluminum or aluminum alloy, it is the oxide layer of 17-76nm that the outer peripheral surface of lead frame Ji Dao (5) is coated with a circle thickness, described oxide layer by sputtering sedimentation, this oxide layer by mass percent be the indium oxide of 45-50%, the zinc oxide of the tin oxide of 25-30%, the germanium oxide of 8-10% and surplus forms.
9. a kind of high-density integrated circuit package structure according to claim 8, it is characterized in that, described lead frame Ji Dao (5) is 0.203mm to the distance on interior lead-foot-line (3) top, the sinking distance of lead frame Ji Dao (5) is 0.203mm, the length of interior lead-foot-line (3) is 0.659mm, and the encapsulating material that described plastic-sealed body (2) uses is environment-friendly resin plastic packaging material.
10. a kind of high-density integrated circuit package structure according to claim 1 to 8 any one, it is characterized in that, described lead frame (7) is of a size of long 300 ± 0.100mm, wide 100 ± 0.050mm and thick 0.203mm, (7) are provided with multiple installation unit to lead frame, described installation unit broad ways arranges into 11 rows, line up 36 row along its length, be provided with multiple fabrication hole (8) in the middle of described lead frame (7), described fabrication hole (8) comprises elongated hole and square opening.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017121336A1 (en) * | 2016-01-15 | 2017-07-20 | 气派科技股份有限公司 | High density integrated circuit package structure and integrated circuit |
| CN107093595A (en) * | 2017-05-03 | 2017-08-25 | 广东气派科技有限公司 | A kind of lead frame unit, lead frame and the packaging based on lead frame unit |
| CN108109977A (en) * | 2018-02-12 | 2018-06-01 | 王孝裕 | It is a kind of to manufacture ic chip package structure with ultrasonic copper wire |
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| CN102361025A (en) * | 2011-10-28 | 2012-02-22 | 深圳市气派科技有限公司 | High-density integrated circuit packaging structure, packaging method for packaging structure, and integrated circuit |
| CN202259258U (en) * | 2011-10-28 | 2012-05-30 | 深圳市气派科技有限公司 | 8-pin high-density integrated circuit packaging structure |
| CN203218252U (en) * | 2013-03-15 | 2013-09-25 | 气派科技股份有限公司 | EMSOP8 integrated circuit packaging lead frame structure |
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| US6031282A (en) * | 1998-08-27 | 2000-02-29 | Advantest Corp. | High performance integrated circuit chip package |
| CN102361025A (en) * | 2011-10-28 | 2012-02-22 | 深圳市气派科技有限公司 | High-density integrated circuit packaging structure, packaging method for packaging structure, and integrated circuit |
| CN202259258U (en) * | 2011-10-28 | 2012-05-30 | 深圳市气派科技有限公司 | 8-pin high-density integrated circuit packaging structure |
| CN203218252U (en) * | 2013-03-15 | 2013-09-25 | 气派科技股份有限公司 | EMSOP8 integrated circuit packaging lead frame structure |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017121336A1 (en) * | 2016-01-15 | 2017-07-20 | 气派科技股份有限公司 | High density integrated circuit package structure and integrated circuit |
| CN107093595A (en) * | 2017-05-03 | 2017-08-25 | 广东气派科技有限公司 | A kind of lead frame unit, lead frame and the packaging based on lead frame unit |
| CN108109977A (en) * | 2018-02-12 | 2018-06-01 | 王孝裕 | It is a kind of to manufacture ic chip package structure with ultrasonic copper wire |
| CN108109977B (en) * | 2018-02-12 | 2020-04-21 | 王艺蒲 | Integrated circuit chip packaging device manufactured by ultrasonic copper wires |
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| CN104979303B (en) | 2018-12-04 |
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Denomination of invention: A High Density Integrated Circuit Package Structure Effective date of registration: 20221215 Granted publication date: 20181204 Pledgee: Shenzhen small and medium sized small loan Co.,Ltd. Pledgor: China Chippacking Technology Co.,Ltd. Registration number: Y2022980027696 |