CN104979221B - The manufacturing method and semiconductor device of semiconductor device - Google Patents

The manufacturing method and semiconductor device of semiconductor device Download PDF

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Publication number
CN104979221B
CN104979221B CN201510087712.6A CN201510087712A CN104979221B CN 104979221 B CN104979221 B CN 104979221B CN 201510087712 A CN201510087712 A CN 201510087712A CN 104979221 B CN104979221 B CN 104979221B
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China
Prior art keywords
resin
notch
semiconductor device
lead terminal
opening portion
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CN201510087712.6A
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CN104979221A (en
Inventor
横山岳
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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Priority to JP2014075581 priority Critical
Priority to JP2014-075581 priority
Priority to JP2014-147096 priority
Priority to JP2014147096A priority patent/JP6451117B2/en
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Publication of CN104979221A publication Critical patent/CN104979221A/en
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Publication of CN104979221B publication Critical patent/CN104979221B/en
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49541Geometry of the lead-frame
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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    • H01L23/053Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/057Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
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    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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    • H01L2924/19107Disposition of discrete passive components off-chip wires

Abstract

Present invention offer is able to suppress the stress being applied on the lead terminal of the lead frame through insert injection molding, even if making the manufacturing method and semiconductor device of the thinning semiconductor device that also can be improved wire bonding, improve reliability of the thickness of lead terminal.The clamping protrusion of the clamping part formed on the joint portion of lead terminal is clamped in using upper lower mold and by resin-case insert injection molding, make to be mounted with that the insulating substrate with wiring pattern of semiconductor element is fitted to resin-case and is bonded in the opening portion of the resin-case, makes to be electrically connected between the above-mentioned wiring pattern between semiconductor element and the joint portion of lead terminal and/or on insulating substrate and the joint portion of lead terminal with bonding line.

Description

The manufacturing method and semiconductor device of semiconductor device
Technical field
The present invention relates to the inside storages of the resin-case obtained by making lead frame integrally formed by insert injection molding It is equipped with the manufacturing method and semiconductor dress of the semiconductor device of the insulating substrate of semiconductor element and/or other electronic components It sets.
Background technique
As this semiconductor device, such as oneself knows the conventional example recorded in the Fig. 3 for having patent document 1.
Fig. 3 of above patent document 1 is with the lower end end for bringing-out that will be connected on the lead frame of bonding line Portion is bent into L-shaped shape and forms horizontal part, carries out the horizontal part to the inside of cricoid insulation shell mode outstanding embedding Part injection molding.For the horizontal part to the inside of cricoid insulation shell bringing-out outstanding, infused in inserts Unwanted part is cut off after being moulded into type.
In patent document 2, to configure up and down direction adjusting fixed pin in metal die under anchor leg frame The state rather resin on surface is formed when resin is semi-molten state when withdrawing fixed pin from leadframe surfaces.
Existing technical literature
Patent document
Patent document 1: Japanese Unexamined Patent Publication 11-330344 bulletin
Patent document 2: Japanese Unexamined Patent Publication 2001-18252 bulletin
Summary of the invention
Technical problem
But for above patent document 1, because cutting off the unwanted portion of bringing-out after insert injection moulding Point, so may be drawn in outside as the thickness for applying stress and lead terminal to external leading-out terminal in cutting is thinning The interconnecting piece of the bonding line of terminal deforms.Additionally, it is possible to because cutting when stress due in external leading-out terminal and insulation shell Gap is generated between the resin layer of body.As a result, when engaging bonding line with bringing-out, there are wire bonding drops Reliability low, to semiconductor device, such as the project that vibration test and/or thermal cycle etc. impact.
In addition, as the thickness of lead terminal is thinning, existing and drawing using fixed pin fixation for above patent document 2 The position of wire frame deforms, and wire bonding reduces, and follows to the reliability of semiconductor device, such as vibration test and/or heat The project that ring etc. impacts.
The present invention provides the stress for inhibiting to be applied on the lead terminal of the lead frame through insert injection molding, even if will draw The manufacturing method and semiconductor of the thinning semiconductor device that also can be improved wire bonding, improve reliability of the thickness of line terminals Device.
Technical solution
To achieve the goals above, a mode of the manufacturing method of semiconductor device of the invention is by semiconductor element Being accommodated in has opening portion by using the insert injection molding of at least two metal dies and integrally formed with lead terminal The intracorporal semiconductor device of cricoid resin shell manufacturing method, comprise the following steps: insert injection moulding process, make have drawing The clamping part for the clamping protrusion that the joint portion of line terminals is formed configures in such a way that the inside to above-mentioned opening portion is outstanding upper A metal die in metal die is stated, it is prominent to clamp clamping use using said one metal die and another metal die Rise and by above-mentioned resin-case insert injection molding;Substrate installation procedure, make to be mounted with semiconductor element has wiring pattern Insulating substrate be fitted in the above-mentioned opening portion of the above-mentioned resin-case through insert injection molding and be bonded;With lead key Process is closed, above-mentioned wiring pattern and the lead between semiconductor element and the joint portion of lead terminal and/or on insulating substrate are made It is electrically connected between the joint portion of terminal with bonding line.
In addition, a mode of semiconductor device of the invention, be semiconductor element is accommodated in by insert injection moulding at Type and the intracorporal semiconductor device of cricoid resin shell with opening portion integrally formed with lead terminal, have: having and connect The above-mentioned lead terminal in conjunction portion and portion of terminal;Make the folder with the clamping protrusion formed at the joint portion of above-mentioned lead terminal Hold portion to the inside of above-mentioned opening portion it is prominent in the state of, clamp the clamping with protrusion with mutually opposed metal die to carry out Above-mentioned resin-case obtained by above-mentioned insert injection molding;Configure the tool for being mounted with above-mentioned semiconductor element in above-mentioned opening portion There is the insulating substrate of wiring pattern;And make between above-mentioned semiconductor element and the above-mentioned joint portion of above-mentioned lead terminal and above-mentioned The bonding line being electrically connected between above-mentioned wiring pattern and the above-mentioned joint portion of above-mentioned lead terminal on insulating substrate, wherein on It states clamping part and has notch.
Beneficial effect
The present invention can provide the stress for inhibiting to be applied on the lead terminal of the lead frame through insert injection molding, even if By the manufacturing method and half of the thinning semiconductor device that also can be improved wire bonding, improve reliability of the thickness of lead terminal Conductor device.
Detailed description of the invention
Figure 1A is the top view of the semiconductor device of embodiments of the present invention, and Figure 1B is the B-B sectional view of Figure 1A, Fig. 1 C It is the C-C sectional view of Figure 1A.
Fig. 2 is the portion the D enlarged drawing of Figure 1A of embodiments of the present invention.
Fig. 3 is the portion the E enlarged drawing of Figure 1B of embodiments of the present invention.
Fig. 4 A- Fig. 4 B is the portion D corresponding with Figure 1A enlarged drawing of embodiments of the present invention.
Fig. 5 is the top view for indicating the lead frame of embodiments of the present invention.
Fig. 6 is the sectional view for indicating the metal die of insert injection moulding of embodiments of the present invention.
Fig. 7 is the top view of the resin-case after the insert injection moulding for indicating embodiments of the present invention.
Fig. 8 is the top view for indicating the semiconductor device aggregate of embodiments of the present invention.
Fig. 9 is the top view for indicating the lead frame of embodiments of the present invention.
Figure 10 is the enlarged plan view corresponding with Fig. 2 of embodiments of the present invention.
Figure 11 is the sectional view on the XI-XI line of Figure 10.
Figure 12 is the enlarged plan view corresponding with Fig. 2 of embodiments of the present invention.
Figure 13 is the sectional view on the XIII-XIII line of Figure 12.
Figure 14 is the enlarged plan view corresponding with Fig. 2 of embodiments of the present invention.
Symbol description
10: semiconductor device
11: resin-case
11a: resin layer
12: opening portion
12a: notch
12b: end edge
13: lead terminal inserting surface
14: square frame-like portion
15: semiconductor element
15a, 15b: electrode
16: insulating substrate
16a: wiring pattern
21A~21D: lead terminal
21a: joint portion
21b: portion of terminal
21c: clamping part
21d, 21h, 21i, 21k: notch
21e, 21f, 21g, 21j: protrusion is used in clamping
22: bonding line
31: lead frame
32: connecting rod
41: lower mold
42: upper mold
43: slot
45: resin-case aggregate
46: semiconductor device aggregate
51,53: resin Injection Space
52,54: the prominent layer of resin
Specific embodiment
Hereinafter, illustrating embodiments of the present invention with reference to the accompanying drawings.
[embodiment one]
The semiconductor device of embodiments of the present invention is illustrated.
Figure 1A -1C, Fig. 2, the top view of Fig. 3, Fig. 4 A-4B expression embodiments of the present invention and its sectional view and amplification Figure.Figure 1A indicates that top view, Figure 1B indicate that the B-B sectional view of Figure 1A, Fig. 1 C indicate the C-C sectional view of Figure 1A.Fig. 2 indicates Figure 1A The portion D enlarged drawing, Fig. 3 indicates the portion the E enlarged drawing of Figure 1B, and Fig. 4 A-4B indicates the portion D corresponding with Figure 1A enlarged drawing.
As shown in Figure 1A, for semiconductor device 10, opening portion 12 is formed in central portion, there is lead terminal 21A ~21D and by insert injection molding come cricoid resin-case 11 obtained by integrally formed.It is embedded with absolutely in resin-case 11 Edge substrate 16 is equipped with semiconductor element 15 on the wiring pattern 16a being formed on insulating substrate 16.Semiconductor element 15, Wiring pattern 16a and lead terminal 21A~21D passes through bonding line 22 respectively and is electrically connected.
As shown in Figure 1B, lead terminal inserting surface 13 is formed in the top of the opening portion of resin-case 11 12.Draw at this The peripheral side of line terminals inserting surface 13 is formed with square frame-like portion 14 outstanding upwards.
Notch 12a is formed in the lower face side of opening portion 12.It is fitted into notch 12a and is mounted with semiconductor element The insulating substrate 16 of part 15.Insulating substrate 16 and resin-case 11 are bonded by bonding agent.
It should be noted that the resistance other than semiconductor element 15 can also be installed in the wiring pattern 16a on insulating substrate 16 And/or the electronic components such as capacitor, form the wiring pattern 16a based on purposes.
As shown in Figure 1A, in lead terminal inserting surface 13, by insert injection molding make such as four lead terminal 21A~ 21D is integrally formed in such as bilateral symmetry and the symmetrical position in front and back and resin-case.Each lead terminal 21A~21D has respectively The joint portion 21a of the standby engagement bonding line 22 and portion of terminal 21b being connect with joint portion 21a, and form L-shaped shape.Here, each Lead terminal 21A~21D is configured in such a way that joint portion 21a becomes 12 side of opening portion, and portion of terminal 21b runs through square frame-like portion 14 And extend to the outside of resin-case 11.
It should be noted that lead terminal 21A~21D is not limited to bilateral symmetry, the symmetrical position in front and back, it can also be according to need Change the position of left and right, front and back.In addition, lead terminal 21A~21D is not limited in left and right directions through square frame-like portion 14 Situation can also be bent into L-shaped shape in square frame-like portion 14 and keep it prominent from the upper surface in square frame-like portion 14.
As shown in Figure 1 C, each lead terminal 21A~21D with upper surface from lead terminal inserting surface 13 exposing in the state of with Lead terminal inserting surface 13 becomes conplane mode and is embedded in.
As shown in Fig. 2, lead terminal 21A~21D is formed with clamping part in the end of 12 side of the opening portion of joint portion 21a 21c.Clamping part 21c is prominent into opening portion 12.
In addition, as shown in figure 3, in clamping part 21c into opening portion 12 in situation outstanding, in order to keep bonding line 22 with Insulation distance between lead terminal 21A~21D needs to improve the height of bonding line 22 as illustrating dotted line.
Therefore, as shown in Fig. 2, being formed with by the central portion of the clamping part 21c on top to resin shell in bonding line 22 Concave notch 21d of the top end face of the 12 inside clamping part 21c outstanding of opening portion of body 11 to 12 wall surface of opening portion.It is preferred that The end edge 12b of the opening portion 12 of the end face and resin-case 11 of the bottom of concave notch 21d is in the same plane.
It, can be at each joint portion of lead terminal 21A~21D by having concave notch 21d in clamping part 21c Ensure insulation distance between 21a and each bonding line 22 with each joint portion 21a connection.
As a result, as shown on the solid line in figure 3, being passed through by position for bonding line 22 forms concave notch 21d It reduces, so as to reduce the height of semiconductor device 10.
In the case where the central portion of clamping part 21c forms concave notch 21d, in order to pass through aftermentioned insert injection moulding Molding lower mold 41 and upper mold 42 are reliably clamped, and the protrusion length L1 of clamping part 21c is set as drawing The thickness t (such as 0.5mm) or more of line terminals 21A~21D.
Form the width W1 and W2 of clamping the protrusion 21e and 21f of the left and right sides edge of concave notch 21d It is set as the thickness t or more of lead terminal 21A~21D based on identical reason.In addition, by the width of concave notch 21d Degree W3 is also set to the thickness t or more of lead terminal 21A~21D, and is set as that bonding line 22 can be obtained necessary exhausted The length of edge distance.
Between the joint portion 21a of electrode 15a and lead terminal 21C and 21D that the upper surface of semiconductor element 15 is formed It is electrically connected respectively by bonding line 22.Pass through weldering (not shown) in the electrode 15b that the lower surface of semiconductor element 15 is formed Material or conductive adhesive are electrically connected with the wiring pattern 16a on insulating substrate 16.Wiring pattern 16a and lead terminal It is electrically connected respectively by bonding line 22 between 21A and 21B.
In the above-described embodiment, the case where being formed as L-shaped shape to lead terminal 21A~21D is illustrated, but simultaneously It is without being limited thereto, rectilinear form can be formed as or be formed as T-shaped etc., arbitrary shape can be formed as.
Embodiments of the present invention are to as shown in Figure 2, form in the central portion of the clamping part 21c of lead terminal 21A~21D Concave notch 21d, and form clamping in its two sides and be illustrated with the case where protrusion 21e and 21f.However, of the invention It is not limited to above structure.
As shown in Figure 4 A, pass through the side of the end face of the inside with the opening portion 12 perpendicular to resin-case 11 in bonding line 22 In the case where the upper surface of the end surface side of the two sides of the joint portion 21a of parallel lead terminal 21A~21D, can also with End face formation perpendicular to the two sides of the parallel joint portion 21a in the direction of the end face of the inside of the opening portion 12 of resin-case 11 is cut Oral area 21h and 21i, and in the clamping protrusion 21g of the central portion of joint portion 21a setting convex.
In addition, as shown in Figure 4 B, passing through the end of the inside with the opening portion 12 perpendicular to resin-case 11 in bonding line 22 It, can also in the case where the upper surface of the end surface side of the side of the joint portion 21a of the parallel lead terminal 21A~21D in the direction in face To form notch 21k, and the end of the joint portion 21a in the other side by the end face of the side of joint portion 21a in bonding line 22 Clamping protrusion 21j is arranged in face.
At this point, the protrusion length L3 of clamping protrusion 21g, 21j and width W4 are set as lead terminal 21A~21D's Thickness t or more.Thereby, it is possible to reliably by the lower mold 41 of aftermentioned insert injection molding and upper mold 42 come It is clamped.
It should be noted that the radical of bonding line 22 can be one, it can also be according to pressure resistance and/or the purposes of semiconductor device Deng radical required for engagement.
In addition, the opening portion 12 of resin-case 11, lead terminal inserting surface 13 and square frame-like portion 14 are by (not shown) Insulative resin, such as epoxy casting resin and/or gel sealant etc. carry out resin seal.
[embodiment two]
The manufacturing method of the semiconductor device of embodiments of the present invention is illustrated.
The top view of Fig. 5 expression lead frame 31.Lead frame 31 is with the side respectively inwards such as four groups of lead terminal 21A~21D Mode outstanding is integrally formed in the inner peripheral surface of the connecting rod 32 of rectangle frame-shaped.
Lead terminal 21A~21D is as described above, having the joint portion 21a of engagement bonding line 22 and connecting with joint portion 21a Portion of terminal 21b, portion of terminal 21b connect with connecting rod 32.
It is respectively formed in the joint portion 21a of lead terminal 21A~21D and as shown in Figure 2 has concave notch 21d Clamping part 21c.
Fig. 6 indicates the sectional view of the metal die of insert injection molding.As shown in fig. 6, lead frame 31 be assemblied in carry out it is embedding On the lower mold 41 of part injection molding.It is used in the clamping that lower mold 41 has the clamping part 21c with notch 21d The chimeric slot 43 of protrusion 21e, 21f.Lead frame 31 is assembled to lower mold 41, declines upper mold 42, lead frame 31 is prominent by clamping the clamping use of the clamping part 21c of each lead terminal 21A~21D with lower mold 41 and upper mold 42 It plays 21e, 21f and fixes.
It should be noted that slot 43 can also be not formed in lower mold, and it is formed on upper mold 42.
Then, injected with predetermined pressure into the chamber 41a and 42a for being formed in lower mold 41 and upper mold 42 by The polyphenylene sulfide (Polyphenylene Sulphide, PPS) and/or poly butylene succinate of heating melting state The resin materials of compositions such as (Polybutylene Succinate, PBS) simultaneously makes its solidification.
Has the clamping protrusion formed by the concave notch 21d of each lead terminal 21A~21D of lead frame 31 The clamping part 21c of 21e, 21f are by upper mold 42 and have and the clamping of the clamping part 21c chimeric slot of protrusion 21e, 21f 43 lower mold 41 is clamped.Thereby, it is possible to make each lead terminal 21A~21D be fixed on correct position, lead will not occur The case where terminal 21A~21D floats from the resin layer 11a of resin-case 11 and generates gap, can reliably carry out inserts note Modeling.
In addition, having the shape of the clamping part 21c of concave notch 21d as shown in Fig. 2, in order to reliably pass through inserts The lower mold 41 and upper mold 42 of injection molding are clamped, by clamping protrusion 21e, 21f of clamping part 21c Prominent length L1 is set as the thickness t (such as 0.5mm) or more of lead terminal 21A~21D.Form concave notch 21d's The width W1 and W2 of clamping the protrusion 21e and 21f of left and right lateral edge portion are set as lead terminal also based on identical reason The thickness t or more of 21A~21D.In addition, the width W3 of concave notch 21d is also set to lead terminal 21A~21D's Thickness t or more, and be set as that bonding line 22 can be obtained the length of necessary insulation distance.
Even if the thickness t of lead terminal 21A~21D for 0.5mm hereinafter, can also be by having in lead terminal 21A~21D There is the clamping part 21c for the concave notch 21d for having above-mentioned size and be fixed to correct position, is capable of forming not generate and draw The resin-case 11 of the joint portion 21a deformation of line terminals 21A~21D.
Further, since do not need in fixation of the lead frame 31 to metal die using fixed pin, thus be able to suppress through The deformation of the joint portion 21a of lead terminal 21A~21D of insert injection molding.
It, can be not peeling-off by inhibiting the deformation of the joint portion 21a of the resin-case 11 through insert injection molding In the case where so that bonding line 22 is fastenably engaged to joint portion 21a, therefore the resin-case 11 that wire bonding can be made good at Type.Thereby, it is possible to improve the reliability of semiconductor device 10, such as vibration test and/or thermal cycle etc..
The top view of resin-case aggregate 45 of Fig. 7 expression through insert injection molding.Each resin-case 11 with connect Bar 32 links.
Fig. 8 shows the top views of semiconductor device aggregate 46.For constituting resin-case aggregate 45 shown in Fig. 7 For each resin-case 11, the face for being mounted with semiconductor element 15 is placed in the side of the inside of the opening portion 12 of resin-case 11 Formula is entrenched in the insulating substrate for being mounted with semiconductor element 15 16 in the notch 12a of opening portion 12.
It should be noted that be bonded by bonding agent between resin-case 11 and insulating substrate 16.
Also, the resin-case aggregate 45 for being fitted into insulating substrate 16 is engaged by wirebonding device in predetermined position Bonding line 22.
Then, it is filled by cutting off the connecting rod 32 of the lead frame 31 of semiconductor device aggregate 46 to form four semiconductors Set 10.
It should be noted that the cutting of the connecting rod 32 of lead frame 31 can also carry out before engaging bonding line 22.
In addition, after the engagement of bonding line 22, opening portion 12, lead terminal inserting surface 13 and the square box of resin-case 11 Shape portion 14 carries out resin seal by insulative resin (not shown), such as epoxy casting resin and/or gel sealant etc..
According to the manufacturing method of above-mentioned semiconductor device, to 12 inside clamping part outstanding of the opening portion of resin-case 11 21c does not need to be cut off after insert injection molding.Therefore, it is able to suppress the lead terminal 21A for being applied to resin-case 11 The stress of the joint portion 21a of~21D, to inhibit the deformation of joint portion 21a.In addition, can prevent because cutting when stress due to Gap is generated between the joint portion 21a of lead terminal 21A~21D and the resin layer 11a of resin-case 11.
Therefore, bonding line 22 can be fastenably engaged to joint portion 21a in the case where not peeling-off.Thereby, it is possible to The resin shell of reliability wire bonding is good, that semiconductor device 10 can be improved, such as vibration test and/or thermal cycle etc. Body 11 forms.
In addition, in the state that the clamping part 21c of lead terminal 21A~21D is prominent into opening portion 12, such as void in Fig. 3 Shown in line, in order to keep the insulation distance of lead terminal 21A~21D Yu bonding line 22, need to improve the height of bonding line 22.So And in embodiments of the present invention, concave notch is formed in the position opposed with bonding line 22 of clamping part 21c 21d therefore, can be comparable with concave notch 21d by being declined by position for bonding line 22 as solid line in Fig. 3 The part of height, so as to reduce the height of semiconductor device 10.
Embodiments of the present invention in the central portion of the clamping part 21c of lead terminal 21A~21D to forming as shown in Figure 2 Concave notch 21d, and form clamping in its two sides and be illustrated with the case where protrusion 21e and 21f.However, of the invention It is not limited to above structure.
As shown in Figure 4 A, pass through the direction of the inner side end with the opening portion 12 perpendicular to resin-case 11 in bonding line 22 In the case where the upper surface of the end surface side of the two sides of the joint portion 21a of parallel lead terminal 21A~21D, can also with hang down Directly notch is formed in the end face of the two sides of the parallel joint portion 21a in the direction of the inner side end of the opening portion of resin-case 11 12 21h and 21i and the central portion of joint portion 21a setting convex clamping protrusion 21g.
In addition, as shown in Figure 4 B, passing through the inner side end with the opening portion 12 perpendicular to resin-case 11 in bonding line 22 The parallel lead terminal 21A~21D in direction joint portion 21a side end surface side upper surface in the case where, Ke Yi Bonding line 22 forms notch 21k by the end face of the side of joint portion 21a, and the end face of the joint portion 21a in the other side is set Set clamping protrusion 21j.
At this point, the protrusion length L3 of clamping protrusion 21g, 21j and width W4 are set as lead terminal 21A~21D's Thickness t or more.Thereby, it is possible to reliably by the lower mold 41 of aftermentioned insert injection molding and upper mold 42 come It is clamped.
Therefore, bonding line 22 can be fastenably engaged to joint portion 21a in the case where not peeling-off.Thereby, it is possible to The resin shell of reliability wire bonding is good, that semiconductor device 10 can be improved, such as vibration test and/or thermal cycle etc. Body 11 forms.
It should be noted that the radical of bonding line 22 can be one, it can also be according to pressure resistance and/or the purposes of semiconductor device Deng radical required for engagement.
In addition, in the above-described embodiment, being carried out to the case where four semiconductor device 10 of insert injection molding simultaneously Illustrate, but the present invention is not limited thereto, while the quantity of the semiconductor device of insert injection molding can be according to metal die Specification is set as arbitrary number.
Fig. 9 is the top view for indicating lead frame 31.
In the above-described embodiment, be formed as rectangle frame-shaped the case where progress to by the connecting rod 32 for constituting lead frame 31 Explanation, but the present invention is not limited thereto, as shown in figure 9, the front and back frame portion of connecting rod 32 can also be cut off, with different connections Bar portion 32a and 32b links lead terminal 21A and 21B and lead terminal 21C and 21D.
[embodiment three]
The semiconductor device of other embodiments of the present invention is illustrated.
Figure 10 indicates the enlarged plan view corresponding with Fig. 2 in embodiment one, and Figure 11 is indicated on the XI-XI line of Figure 10 Sectional view.
In the present embodiment, change the notch 21d's of lead terminal 21A~21D in above-mentioned embodiment one Shape has structure same as embodiment one in addition to this, marks the same symbol to part corresponding with Fig. 2, and omit The detailed description carried out to it.
In the present embodiment, by the shape picture of the notch 21d formed in the joint portion 21a of lead terminal 21A~21D It is changed as shown in Figure 10.That is, with the bottom side portion 21n of notch 21d as the outer of the end edge 12b in opening portion 12 The mode of the side only position of backway L4 is formed.
In this way, the bottom side portion 21n of notch 21d has only retreated distance L4 away from the end edge 12b of opening portion 12.Therefore, As shown in Figure 10, rectangular resin Injection Space is formed between the end edge 12b of bottom side portion 21n and opening portion 12 51.For resin Injection Space 51, pass through polyphenylene sulfide (PPS) and poly butylene succinate (PBS) etc. as described above When the injection of the resin material of composition is by 11 insert injection molding of resin-case, resin can be injected in resin Injection Space 51 Material and form the prominent layer 52 of resin.
Here, in order to prevent the prominent layer 52 of resin damaged, by the bottom side portion 21n of notch 21d and opening portion 12 The distance between end edge 12b L4 is set as the thickness t (such as 0.5mm) or more of lead terminal 21A~21D.
Also, in the manufacturing method of the semiconductor device in above-mentioned embodiment three, by 11 inserts of resin-case When injection molding, into the resin Injection Space 51 in the notch 21d that the joint portion 21a of each lead terminal 21A~21D is formed It injects resin material and forms the prominent layer 52 of resin expressed such as Figure 11.
That is, in resin injection process, in the clamping for clamping clamping part 21c with lower mold 41 and upper mold 42 In the state of protrusion 21e, 21f, in the chamber 41a and 42a of lower mold 41 and upper mold 42, infused with predetermined pressure Enter the resin material being made of the polyphenylene sulfide (PPS) of heating melting state and poly butylene succinate (PBS) etc. and makes it Solidification.As a result, by injecting resin material in the resin Injection Space 51 of notch 21d, after resin material solidification, such as scheme Shown in 11, the prominent layer 52 of resin is formed between the bottom side portion 21n of notch 21d and the end edge 12b of opening portion 12.
Therefore, when resin material cure shrinkage after insert-molding, joint portion 21a such as Figure 10 institute of lead terminal 21A Show, become being jammed from four direction, the four direction is in front and back sides identical with above embodiment one and left side Plus prominent this four direction of layer 52 of resin on the basis of the resin layer 11a in these three directions of face.Therefore, it can not shell The joint portion 21a of lead terminal is set more firmly to be joined to resin-case 11 from the case where, it can be good by wire bonding Resin-case 11 forms.Thereby, it is possible to further increase the reliability of semiconductor device 10, such as vibration test and/or heat are followed Ring etc..In addition, because forming the prominent layer 52 of notch 21d and resin in the downside of bonding line 22, can side it is sufficiently true The insulation distance for protecting lead terminal and bonding line 22, while further decreasing the height of bonding line 22.
Also, even plate thickness t is less than thin lead terminal 21A~21D of 0.5mm, and it can also be by lead terminal 21A ~21D has the clamping part 21c of the concave notch 21d of above-mentioned size and is fixed to correct position, is capable of forming not Generate the resin-case 11 of the joint portion 21a deformation of lead terminal 21A~21D.
In addition, because the thickness t of lead terminal 21A~21D will be set as the distance L4 of prominent 52 width of layer of resin More than, so it is prominent to be reliably prevented from the resin when carrying out the engagement of bonding line by wirebonding device after insert-molding Layer 52 is damaged out.
Embodiments of the present invention in the central portion of the clamping part 21c of lead terminal 21A~21D to forming as shown in Figure 10 Concave notch 21d, and form clamping in its two sides and be illustrated with the case where protrusion 21e and 21f.However, of the invention It is not limited to above structure.
As shown in Figure 12 and Figure 13, pass through the end of the inside with the opening portion 12 perpendicular to resin-case 11 in bonding line 22 It, can also in the case where the upper surface of the end surface side of the side of the joint portion 21a of the parallel lead terminal 21A~21D in the direction in face To form notch 21k, and the end of the joint portion 21a in the other side by the end face of the side of joint portion 21a in bonding line 22 Clamping protrusion 21j is arranged in face.At this point, making the bottom side portion 21m of notch 21k in the outside of the end edge 12b of opening portion 12 It retreats and forms resin Injection Space 53, and form the prominent layer 54 of resin.
In addition, as shown in figure 14, passing through the end of the inside with the opening portion 12 perpendicular to resin-case 11 in bonding line 22 It, can also in the case where the upper surface of the end surface side of the two sides of the joint portion 21a of the parallel lead terminal 21A~21D in the direction in face In the end face shape of the joint portion 21a two sides parallel with the direction of end face of inside of opening portion 12 perpendicular to resin-case 11 At notch 21h and 21i, and in the clamping protrusion 21g of the central portion of joint portion 21a setting convex.At this point, also making notch Bottom side portion 21m, 21n of 21h and 21i retreats to the outside of the end edge 12b of opening portion 12 and forms resin Injection Space 53, And form the prominent layer 54 of resin.
It should be noted that in the above-described embodiment, bottom side portion 21m, 21n of notch 21h, 21i being formed as and being open The case where end edge 12b in portion 12 parallel rectilinear form, is illustrated, and but it is not limited to this, can be formed as corrugated The arbitrary shapes such as shape, curve shape, broken line shape.
In addition, in the above-described embodiment, the case where being formed as L-shaped shape to lead terminal 21A~21D, is said Bright, but it is not limited to this, can be formed as rectilinear form or be formed as T-shaped etc., can be formed as arbitrary shape.

Claims (25)

1. a kind of manufacturing method of semiconductor device is accommodated in semiconductor element by using at least two metal dies Insert injection molding and integrally formed with the intracorporal semiconductor device of cricoid resin shell with opening portion of lead terminal Manufacturing method, which is characterized in that comprise the following steps:
Insert injection moulding process, by the joint portion of the bonding line of lead terminal formed and have clamping protrusion and with the key The clamping part for the notch that the opposed position of zygonema is formed configures in such a way that the inside to the opening portion is outstanding in the gold Belong to a metal die in mold, clamp the clamping protrusion using one metal die and another metal die and By the resin-case insert injection molding;
Substrate installation procedure, make the insulating substrate with wiring pattern for being mounted with semiconductor element be fitted to through insert injection moulding at In the opening portion of the resin-case of type and it is bonded;
Wire bonding sequence makes the wiring between semiconductor element and the joint portion of lead terminal and/or on insulating substrate It is electrically connected between pattern and the joint portion of lead terminal with bonding line.
2. a kind of manufacturing method of semiconductor device is to be accommodated in semiconductor element to be integrally formed by insert injection molding There is the manufacturing method of the intracorporal semiconductor device of cricoid resin shell with opening portion of lead terminal, which is characterized in that packet Include following process:
Insert injection moulding process;
Substrate installation procedure forms wiring pattern in the main surface of insulating substrate, and described half is installed on the wiring pattern Conductor element;
Bonding process pacifies the resin-case formed in the insert injection moulding process in the substrate installation procedure The insulating substrate for having filled the semiconductor element is fitted into and is bonded;
Wire bonding sequence makes between the joint portion of the lead terminal and the semiconductor element after the bonding process And/or the lead terminal the joint portion and the insulating substrate wiring pattern between be electrically connected with bonding line;
The insert injection moulding process comprises the following steps:
Arrangement step will have terminal in such a way that the inside in the opening portion of the resin-case configures the joint portion The configuration of the lead terminal at portion and the joint portion of bonding line is on a metal die in a pair of of metal die;
Fixed step sandwiches institute between the one metal die and another metal die in the pair of metal die State lead terminal;
In resin injection process, one metal die in the pair of metal die and another described metal die It injects resin and forms the resin-case;
Wherein, clamping part is formed at the joint portion of the lead terminal, the clamping part has to the resin-case The inside of opening portion clamping protrusion outstanding, the notch formed in the position opposed with the bonding line,
The clamping protrusion is clamped in the fixed step by one metal die and another described metal die,
The slot for clamping protrusion insertion is formed in one metal die.
3. the manufacturing method of semiconductor device according to claim 1, which is characterized in that the clamping protrusion to institute The inside length outstanding for stating the opening portion of resin-case is the thickness of the lead terminal or more.
4. the manufacturing method of semiconductor device according to claim 2, which is characterized in that the clamping protrusion to institute The inside length outstanding for stating the opening portion of resin-case is the thickness of the lead terminal or more.
5. the manufacturing method of semiconductor device according to claim 1, which is characterized in that the notch is with the notch The mode that the bottom side portion in portion is aligned with the end edge of the opening portion is formed.
6. the manufacturing method of semiconductor device according to claim 2, which is characterized in that the notch is with the notch The mode that the bottom side portion in portion is aligned with the end edge of the opening portion is formed.
7. the manufacturing method of semiconductor device according to claim 1, which is characterized in that the notch is in the notch Be formed through insert injection moulding process injection resin material between the bottom side portion in portion and the end edge of the opening portion and Form the resin Injection Space of the prominent layer of resin.
8. the manufacturing method of semiconductor device according to claim 2, which is characterized in that the notch is in the notch Be formed through insert injection moulding process injection resin material between the bottom side portion in portion and the end edge of the opening portion and Form the resin Injection Space of the prominent layer of resin.
9. the manufacturing method of semiconductor device described according to claim 1~any one of 8, which is characterized in that the notch Portion is described draw with the width in the direction parallel with the end face of the opening portion of the resin-case of the clamping protrusion The mode more than thickness of line terminals is formed.
10. the manufacturing method of semiconductor device described according to claim 1~any one of 8, which is characterized in that the notch Portion is formed in the center of the clamping part, is formed with the clamping protrusion in the two sides of the notch.
11. the manufacturing method of semiconductor device described according to claim 1~any one of 8, which is characterized in that the notch Portion retains the clamping by the central portion in the clamping part and is formed in a manner of protrusion.
12. the manufacturing method of semiconductor device described according to claim 1~any one of 8, which is characterized in that
The notch is in the clamping parallel with the direction of end face of the opening portion perpendicular to the resin-case The mode that one end in portion retains clamping protrusion is formed.
13. the manufacturing method of semiconductor device described according to claim 1~any one of 8, which is characterized in that the lead The portion of terminal and connecting rod of terminal link.
14. a kind of semiconductor device is that semiconductor element is accommodated in through insert injection molding integrally formed with lead end The intracorporal semiconductor device of cricoid resin shell with opening portion of son, has:
The lead terminal for having joint portion and portion of terminal;
Make inside of the clamping part with the clamping protrusion formed at the joint portion of the lead terminal to the opening portion In the state of protrusion, the clamping is clamped with protrusion with mutually opposed metal die to carry out obtained by the insert injection molding The resin-case;
Configure the insulating substrate with wiring pattern for being mounted with the semiconductor element in the opening portion;
Make the cloth between the semiconductor element and the joint portion of the lead terminal and on the insulating substrate The bonding line being electrically connected between line pattern and the joint portion of the lead terminal;
Wherein, the clamping part has notch.
15. semiconductor device according to claim 14, which is characterized in that notch setting with the bonding line Opposed position, the bonding line is by the joint portion of the lead terminal and the semiconductor element and the insulating substrate On the electrical connection of at least one of the wiring pattern.
16. semiconductor device according to claim 14, which is characterized in that the notch is with the bottom edge of the notch The mode that portion is aligned with the end edge of the opening portion is formed.
17. semiconductor device according to claim 15, which is characterized in that the notch is with the bottom edge of the notch The mode that portion is aligned with the end edge of the opening portion is formed.
18. semiconductor device according to claim 14, which is characterized in that the notch is on the bottom edge of the notch Injection is formed through between portion and the end edge of the opening portion to form the resin material of the resin-case and form tree The resin Injection Space of the prominent layer of rouge.
19. semiconductor device according to claim 15, which is characterized in that the notch is on the bottom edge of the notch Injection is formed through between portion and the end edge of the opening portion to form the resin material of the resin-case and form tree The resin Injection Space of the prominent layer of rouge.
20. semiconductor device according to claim 14, which is characterized in that the clamping protrusion of the clamping part to institute The inside length outstanding for stating the opening portion of resin-case is the thickness of the lead terminal or more.
21. semiconductor device according to claim 14, which is characterized in that the notch is with the clamping of the clamping part It is the thickness of the lead terminal with the width in the direction parallel with the end face of the opening portion of the resin-case in protrusion Degree or more mode formed.
22. semiconductor device according to claim 15, which is characterized in that the notch is with the clamping of the clamping part It is the thickness of the lead terminal with the width in the direction parallel with the end face of the opening portion of the resin-case in protrusion Degree or more mode formed.
23. semiconductor device described in any one of 5~22 according to claim 1, which is characterized in that the notch setting exists The center of the clamping part, and the clamping protrusion is formed in the two sides of the notch.
24. semiconductor device described in any one of 5~22 according to claim 1, which is characterized in that the notch is in institute The mode for stating the central portion reserved gripping protrusion of clamping part is arranged.
25. semiconductor device described in any one of 5~22 according to claim 1, which is characterized in that the notch with Perpendicular to an end reserved gripping of the parallel clamping part in the direction of the end face of the opening portion of the resin-case It is arranged with the mode of protrusion.
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