CN104968085A - Double filtering type grid driving system based on light beam excitation and logic protection mode - Google Patents
Double filtering type grid driving system based on light beam excitation and logic protection mode Download PDFInfo
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- CN104968085A CN104968085A CN201510324152.1A CN201510324152A CN104968085A CN 104968085 A CN104968085 A CN 104968085A CN 201510324152 A CN201510324152 A CN 201510324152A CN 104968085 A CN104968085 A CN 104968085A
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Abstract
The present invention discloses a double filtering type grid driving system based on light beam excitation and logic protection mode, mainly consisting of a switching current source, a transformer T, a driving chip M, a diode D1 and so on, wherein the double filtering type grid driving system is also provided with a double filtering amplification circuit, a light beam excitation type logic amplification circuit, and a logic protection emitter coupled type amplification circuit. The double filtering type grid driving system of the present invention can better filter clutter signals in a circuit, and performs amplification for the clutter signals, thereby further improving accuracy and application range of a product; the double filtering type grid driving system not only has functions of short circuit protection, overvoltage protection and open circuit protection, but also has low power consumption and short starting time which is only a quarter of the starting time of a traditional grid drive circuit; in addition, the double filtering type grid driving system is also provided with a switching power amplification circuit, thereby ensuring that attenuation cannot occur on a power signal inputted into the driving chip M, and further ensuring stability of the integral performance.
Description
Technical field
The present invention relates to a kind of LED drive circuit, specifically refer to based on beam excitation and the two filtering type raster data model system of virtual protection formula.
Background technology
At present, because LED has, energy consumption is low, the feature such as long service life and safety and environmental protection, and it has become one of main product of people's life lighting.Because LED is different from traditional incandescent lamp, therefore its needs are driven by special drive circuit.But, the widely used gate driver circuit of current people due to the irrationality of its project organization, defects such as result in current gate driver circuit and have that energy consumption is higher, current noise comparatively large and start-up time is longer.
Summary of the invention
The object of the invention is to the defect that energy consumption is higher, current noise is comparatively large and start-up time is longer overcoming the existence of current gate driver circuit; a kind of reasonable in design is provided; can effectively reduce energy consumption and current noise, obviously shorten start-up time based on beam excitation and the two filtering type raster data model system of virtual protection formula.
Object of the present invention is achieved through the following technical solutions:
Based on beam excitation and the two filtering type raster data model system of virtual protection formula, primarily of switched current source, transformer T, driving chip M, be serially connected with the diode D1 between the VCC pin of driving chip M and BOOST pin, be serially connected with the electric capacity C3 between the BOOST pin of driving chip M and TG pin, be serially connected with the resistance R7 between the TG pin of driving chip M and TS pin, be serially connected with the switch power amplifying circuit between switched current source and driving chip M, and base stage is connected with the TG pin of driving chip M, collector electrode is ground connection after electric capacity C4 and electric capacity C5 in turn, and the transistor Q4 of grounded emitter forms.Simultaneously, between switched current source and driving chip M, be also serially connected with beam excitation formula logic amplifying circuit, between driving chip M and this beam excitation formula logic amplifying circuit, be then also serially connected with two filter amplification circuit and virtual protection emitter-base bandgap grading manifold type amplifying circuit, described beam excitation formula logic amplifying circuit is primarily of power amplifier P4, NAND gate IC1, NAND gate IC2, NAND gate IC3, negative pole is connected with the electrode input end of power amplifier P, the polar capacitor C11 of positive pole ground connection after optical diode D3, one end is connected with the positive pole of polar capacitor C11, the resistance R17 of other end ground connection after diode D4, positive pole is connected with the tie point of diode D4 with resistance R17, the polar capacitor C13 of minus earth, one end is connected with the negative input of NAND gate IC1, the resistance R18 that the other end is connected with the electrode input end of power amplifier P4, be serially connected in the resistance R19 between the negative input of power amplifier P4 and output, one end is connected with the output of NAND gate IC1, the resistance R20 that the other end is connected with the negative input of NAND gate IC3, positive pole is connected with the output of NAND gate IC2, the electric capacity C12 that negative pole is connected with the negative input of NAND gate IC3, and one end is connected with the positive pole of polar capacitor C13, the resistance R21 that the other end is connected with the negative input of NAND gate IC2 forms, the electrode input end of described NAND gate IC1 is connected with the negative input of power amplifier P4, and its output is connected with the electrode input end of NAND gate IC2, the electrode input end of NAND gate IC3 is connected with the output of power amplifier P4, and the electrode input end of power amplifier P4 is then connected with switched current source.
Described pair of filter amplification circuit is by triode VT101, triode VT102, triode VT103, triode VT104, triode VT105, triode VT106, triode VT107, operational amplifier P101, operational amplifier P102, operational amplifier P103, one end is as input, the resistance R101 that the other end is connected with the base stage of triode VT107, the electric capacity C101 in parallel with resistance R101, one end is connected with the base stage of triode VT107, the resistance R103 that the other end is connected with the emitter of triode VT107 after resistance R105, one end is connected with the base stage of triode VT107, the resistance R102 that the other end is connected with the collector electrode of triode VT107 after resistance R104, positive pole is connected with the emitter of triode VT107, the electric capacity C104 that negative pole is connected with the tie point of resistance R105 with resistance R103, be serially connected in the resistance R114 between the base stage of triode VT101 and emitter, one end ground connection, the resistance R113 that the other end is connected with the base stage of triode VT102, P pole is connected with the base stage of triode VT103, the diode D101 that N pole is connected with the collector electrode of triode VT107 after electric capacity C103, P pole is connected with the N pole of diode D101 after diode D102, the diode D103 that N pole is connected with the base stage of triode VT106, be serially connected in the resistance R111 between the base stage of triode VT106 and collector electrode, one end ground connection, the resistance R112 that the other end is connected with the emitter of triode VT104, minus earth, the electric capacity C105 that positive pole is connected with the positive pole of electric capacity C104 after resistance R106, one end is connected with the positive pole of electric capacity C105, the resistance R108 that the other end is connected with the negative input end of operational amplifier P101, one end is connected with the positive pole of electric capacity C105, the resistance R107 that the other end is connected with the output of operational amplifier P101, be serially connected in the electric capacity C106 between the negative input end of operational amplifier P101 and output, minus earth, the electric capacity C108 that positive pole is connected with the positive input terminal of operational amplifier P102, negative pole is connected with the output of operational amplifier P101 after resistance R109, the electric capacity C107 that positive pole is connected with the negative input end of operational amplifier P102, one end is connected with the negative pole of electric capacity C107, the resistance R110 that the other end is connected with the positive pole of electric capacity C108, negative pole is connected with the base stage of triode VT107, the electric capacity C102 that positive pole is connected with the emitter of triode VT104 after resistance R115, minus earth, the electric capacity C109 that positive pole is connected with the tie point of resistance R104 with resistance R102 after resistance R116, one end is connected with the positive pole of electric capacity C109, the resistance R118 that the other end is connected with the negative input end of operational amplifier P103, one end is connected with the positive pole of electric capacity C109, the resistance R117 that the other end is connected with the positive input terminal of operational amplifier P103, and the electric capacity C110 be serially connected between the negative input end of operational amplifier P103 and output forms, wherein, the negative pole of electric capacity C104 is also connected with the collector electrode of triode VT105 with the collector electrode of triode VT106 simultaneously, the emitter of triode VT101, the collector electrode of triode VT103 is all connected with the output of operational amplifier P103 with the collector electrode of triode VT104, the positive input terminal ground connection of operational amplifier P103, the base stage of triode VT101 is connected with the emitter of triode VT102, the collector electrode of triode VT101 is connected with the base stage of triode VT102, the collector electrode of triode VT102 is connected with the base stage of triode VT103, the emitter of triode VT103 is connected with the base stage of triode VT104, the emitter of triode VT104 is connected with the emitter of triode VT105, the base stage of triode VT105 is connected with the emitter of triode VT106, the positive input terminal ground connection of operational amplifier P101, the positive pole of electric capacity C107 is also connected with the output of operational amplifier P102 and the N pole of diode D101 simultaneously, the emitter of described triode VT104 is connected as output and with the TD pin of driving chip M.
Described virtual protection emitter-base bandgap grading manifold type amplifying circuit is primarily of triode Q8, triode Q9, power amplifier P5, power amplifier P6, be serially connected in the resistance R23 between the negative input of power amplifier P5 and output, be serially connected in the polar capacitor C17 between the electrode input end of power amplifier P6 and output, be serially connected in the resistance R22 between the electrode input end of power amplifier P5 and the collector electrode of triode Q8, be serially connected in the resistance R24 between the collector electrode of triode Q8 and the base stage of triode Q9, the electric capacity C15 be in parallel with resistance R24, negative pole is connected with the electrode input end of power amplifier P5, the polar capacitor C14 that positive pole is connected with the emitter of triode Q8 after resistance R25, be serially connected in the resistance R26 between the base stage of triode Q9 and the positive pole of polar capacitor C14, positive pole is connected with the emitter of triode Q9, negative pole is in turn through electric capacity C16 that voltage stabilizing didoe D5 is connected with the output of power amplifier P5 after resistance R27, P pole is connected with the output of power amplifier P6, the diode D6 that N pole is connected with the tie point of resistance R27 with voltage stabilizing didoe D5 after resistance R28 through resistance R29, and P pole is connected with the negative pole of electric capacity C16, the voltage stabilizing didoe D7 that N pole is connected with the tie point of resistance R29 with diode D6 forms, the base stage of described triode Q8 is connected with the positive pole of polar capacitor C14, and its emitter is connected with the emitter of triode Q9, and its collector electrode is connected with the negative input of power amplifier P5, the collector electrode of triode Q9 is connected with the negative input of power amplifier P6, and the electrode input end of power amplifier P6 is connected with the output of power amplifier P5, the described positive pole of polar capacitor C14 is connected with the output of NAND gate IC3, and resistance R29 is then connected with the input of resistance R101 with the tie point of resistance R28.
Described switch power amplifying circuit is then by power amplifier P1, power amplifier P2, power amplifier P3, be serially connected in the resistance R9 between the output of power amplifier P1 and negative input and electric capacity C6, be serially connected in the resistance R10 between the output of power amplifier P2 and electrode input end and electric capacity C7, base stage is connected with the output of power amplifier P1, the triode Q5 that collector electrode is connected with the electrode input end of power amplifier P3 after resistance R11, base stage is connected with the emitter of triode Q5, the triode Q6 that collector electrode is connected with the negative input of power amplifier P3 after resistance R12, base stage is connected with the output of power amplifier P2 after resistance R14, the triode Q7 that collector electrode is connected with the base stage of triode Q6 after resistance R13, positive pole is connected with the negative input of power amplifier P3, and negative pole is connected with the emitter of triode Q6 and the electric capacity C8 of ground connection, the electric capacity C9 be in parallel with resistance R14, one end is connected with the base stage of triode Q7, the resistance R15 of the external-4V voltage of the other end, one end is connected with the emitter of triode Q7, the resistance R16 of the external-4V voltage of the other end, the electric capacity C10 be in parallel with resistance R16, and N pole is connected with the collector electrode of triode Q5, the diode D2 of the extremely external-4V voltage of P forms, the negative input of described power amplifier P1 is connected with the electrode input end of power amplifier P2, the output of power amplifier P3 is connected with the VCC pin of driving chip M, the collector electrode of triode Q7 is connected with the INP pin of driving chip M, and the electrode input end of power amplifier P1 is then all connected with switched current source with the negative input of power amplifier P2.
Further, the Same Name of Ends of the primary coil of described transformer T is connected with the tie point of electric capacity C5 with electric capacity C4, ground connection after its non-same polarity is then connected with the emitter of transistor Q4; Meanwhile, the emitter of transistor Q4 is also connected with the TS pin of driving chip M, and the secondary coil of described transformer T is provided with tap Y1 and tap Y2.
Described switched current source is by transistor Q1, transistor Q2, transistor Q3, DC power supply S, be serially connected in the resistance R1 between the collector electrode of transistor Q1 and the collector electrode of transistor Q2, be serially connected in the RC filter circuit between the emitter of transistor Q1 and the negative pole of DC power supply S, be serially connected in the resistance R2 between the base stage of transistor Q1 and the negative pole of DC power supply S, the resistance R5 in parallel with DC power supply S-phase, be serially connected in the resistance R6 between the emitter of transistor Q3 and the negative pole of DC power supply S, be serially connected in the resistance R4 between the collector electrode of transistor Q3 and the collector electrode of transistor Q2, and positive pole is connected with the collector electrode of transistor Q2, the polar capacitor C2 that negative pole is connected with the negative pole of DC power supply S forms, the base stage of described transistor Q2 is also connected with the collector electrode of transistor Q1, and the base stage of transistor Q3 is then connected with the positive pole of DC power supply S with the emitter of transistor Q2 respectively, the positive pole of described polar capacitor C2 is connected with the electrode input end of power amplifier P1, and its negative pole is then connected with the negative input of power amplifier P2, the electrode input end of described power amplifier P4 is then connected with the negative pole of DC power supply S.
For guaranteeing result of use of the present invention, described driving chip M preferentially adopts LTC4440A integrated chip to realize.
The present invention comparatively prior art compares, and has the following advantages and beneficial effect:
(1) the present invention not only has the function of short-circuit protection, overvoltage protection and open-circuit-protection, and its power consumption is lower, is only 1/4 of conventional gate drive circuit start-up time its start-up time.
(2) the present invention is provided with the switched current source carried, and therefore effectively can avoid external electromagnetic interference, meanwhile, can reduce current noise significantly.
(3) the present invention is provided with switch power amplifying circuit, therefore can guarantee that the power signal in input queued switches chip M can not produce decay, and then guarantees overall stable performance.
(4) the present invention is provided with two filter amplification circuit, better can filter the noise signal in circuit, and amplify it, further increase accuracy and the scope of application of product.
Accompanying drawing explanation
Fig. 1 is overall structure schematic diagram of the present invention.
Fig. 2 is virtual protection emitter-base bandgap grading manifold type amplification circuit structure schematic diagram of the present invention.
Fig. 3 is the circuit diagram of of the present invention pair of filter amplification circuit.
Description of reference numerals:
10, two filter amplification circuit; 20, virtual protection emitter-base bandgap grading manifold type amplifying circuit.
Embodiment
Below in conjunction with embodiment, the present invention is described in further detail, but embodiments of the present invention are not limited thereto.
Embodiment
As shown in Figure 1, the present invention is made up of transistor Q4, transformer T, driving chip M, switched current source, diode D1, electric capacity C3, resistance R7, electric capacity C4, electric capacity C5, switch power amplifying circuit, beam excitation formula logic amplifying circuit, two filter amplification circuit 10 and virtual protection emitter-base bandgap grading manifold type amplifying circuit 20.
Wherein, this beam excitation formula logic amplifying circuit is primarily of power amplifier P4, NAND gate IC1, NAND gate IC2, NAND gate IC3, negative pole is connected with the electrode input end of power amplifier P, the polar capacitor C11 of positive pole ground connection after optical diode D3, one end is connected with the positive pole of polar capacitor C11, the resistance R17 of other end ground connection after diode D4, positive pole is connected with the tie point of diode D4 with resistance R17, the polar capacitor C13 of minus earth, one end is connected with the negative input of NAND gate IC1, the resistance R18 that the other end is connected with the electrode input end of power amplifier P4, be serially connected in the resistance R19 between the negative input of power amplifier P4 and output, one end is connected with the output of NAND gate IC1, the resistance R20 that the other end is connected with the negative input of NAND gate IC3, positive pole is connected with the output of NAND gate IC2, the electric capacity C12 that negative pole is connected with the negative input of NAND gate IC3, and one end is connected with the positive pole of polar capacitor C13, the resistance R21 that the other end is connected with the negative input of NAND gate IC2 forms.
As shown in Figure 3, described pair of filter amplification circuit 10 is by triode VT101, triode VT102, triode VT103, triode VT104, triode VT105, triode VT106, triode VT107, operational amplifier P101, operational amplifier P102, operational amplifier P103, resistance R101, resistance R102, resistance R103, resistance R104, resistance R105, resistance R106, resistance R107, resistance R108, resistance R109, resistance R110, resistance R111, resistance R112, resistance R113, resistance R114, resistance R115, resistance R116, resistance R117, resistance R118, electric capacity C101, electric capacity C102, electric capacity C103, electric capacity C104, electric capacity C105, electric capacity C106, electric capacity C107, electric capacity C108, electric capacity C109, electric capacity C110, diode D101, diode D102, diode D103 forms.
During connection, one end of resistance R101 is as input, the other end is connected with the base stage of triode VT107, electric capacity C101 is in parallel with resistance R101, one end of resistance R103 is connected with the base stage of triode VT107, the other end is connected with the emitter of triode VT107 after resistance R105, one end of resistance R102 is connected with the base stage of triode VT107, the other end is connected with the collector electrode of triode VT107 after resistance R104, the positive pole of electric capacity C104 is connected with the emitter of triode VT107, negative pole is connected with the tie point of resistance R105 with resistance R103, between the base stage that resistance R114 is serially connected in triode VT101 and emitter, one end ground connection of resistance R113, the other end is connected with the base stage of triode VT102, the P pole of diode D101 is connected with the base stage of triode VT103, N pole is connected with the collector electrode of triode VT107 after electric capacity C103, the P pole of diode D103 is connected with the N pole of diode D101 after diode D102, N pole is connected with the base stage of triode VT106, between the base stage that resistance R111 is serially connected in triode VT106 and collector electrode, one end ground connection of resistance R112, the other end is connected with the emitter of triode VT104, the minus earth of electric capacity C105, positive pole is connected with the positive pole of electric capacity C104 after resistance R106, one end of resistance R108 is connected with the positive pole of electric capacity C105, the other end is connected with the negative input end of operational amplifier P101, one end of resistance R107 is connected with the positive pole of electric capacity C105, the other end is connected with the output of operational amplifier P101, between the negative input end being serially connected in operational amplifier P101 of electric capacity C106 and output, the minus earth of electric capacity C108, positive pole is connected with the positive input terminal of operational amplifier P102, the negative pole of electric capacity C107 is connected with the output of operational amplifier P101 after resistance R109, positive pole is connected with the negative input end of operational amplifier P102, one end of resistance R110 is connected with the negative pole of electric capacity C107, the other end is connected with the positive pole of electric capacity C108, the negative pole of electric capacity C102 is connected with the base stage of triode VT107, positive pole is connected with the emitter of triode VT104 after resistance R115, the minus earth of electric capacity C109, positive pole is connected with the tie point of resistance R104 with resistance R102 after resistance R116, one end of resistance R118 is connected with the positive pole of electric capacity C109, the other end is connected with the negative input end of operational amplifier P103, one end of resistance R117 is connected with the positive pole of electric capacity C109, the other end is connected with the positive input terminal of operational amplifier P103, between the negative input end that electric capacity C110 is serially connected in operational amplifier P103 and output, wherein, the negative pole of electric capacity C104 is also connected with the collector electrode of triode VT105 with the collector electrode of triode VT106 simultaneously, the emitter of triode VT101, the collector electrode of triode VT103 is all connected with the output of operational amplifier P103 with the collector electrode of triode VT104, the positive input terminal ground connection of operational amplifier P103, the base stage of triode VT101 is connected with the emitter of triode VT102, the collector electrode of triode VT101 is connected with the base stage of triode VT102, the collector electrode of triode VT102 is connected with the base stage of triode VT103, the emitter of triode VT103 is connected with the base stage of triode VT104, the emitter of triode VT104 is connected with the emitter of triode VT105, the base stage of triode VT105 is connected with the emitter of triode VT106, the positive input terminal ground connection of operational amplifier P101, the positive pole of electric capacity C107 is also connected with the output of operational amplifier P102 and the N pole of diode D101 simultaneously, the emitter of described triode VT104 is connected as output and with the TD pin of driving chip M.
The electrode input end of described NAND gate IC1 is connected with the negative input of power amplifier P4, and its output is connected with the electrode input end of NAND gate IC2; The electrode input end of NAND gate IC3 is connected with the output of power amplifier P4.
The output of described switched current source needs to be connected with the input of switch power amplifying circuit, and the output of switch power amplifying circuit then needs to be connected with driving chip M.Described diode D1 is serially connected with between the VCC pin of driving chip M and BOOST pin, to guarantee that its foreign current can not cause damage to driving chip M when transformer T damages.Electric capacity C3 is serially connected with between the BOOST pin of driving chip M and TG pin, and resistance R7 is then serially connected with between the TG pin of driving chip M and TS pin.
The base stage of described transistor Q4 is connected with the TG pin of driving chip M, and its collector electrode is ground connection after electric capacity C4 and electric capacity C5 in turn, its grounded emitter.Meanwhile, the collector electrode of this transistor Q4 also needs the driving voltage of external+6V, to guarantee that transistor Q4 can normally run.
The Same Name of Ends of the primary coil of described transformer T is connected with the tie point of electric capacity C5 with electric capacity C4, ground connection after its non-same polarity is then connected with the emitter of transistor Q4.Meanwhile, the emitter of transistor Q4 is also connected with the TS pin of driving chip M.
The secondary coil of transformer T is provided with tap Y1 and tap Y2, and namely by this tap Y1 and tap Y2, the present invention is formed with 4 outputs, the i.e. Same Name of Ends of secondary coil on the secondary coil of transformer T, the non-same polarity of Y1 tap, Y2 tap and secondary coil.
Described switch power amplifying circuit, primarily of power amplifier P1, power amplifier P2, power amplifier P3, triode Q5, triode Q6, triode Q7, be serially connected in the one-level RC filter circuit between the output of power amplifier P1 and negative input, be serially connected in the secondary RC filter circuit between the output of power amplifier P2 and electrode input end, and resistance R11, resistance R12, resistance R13, resistance R14, resistance R15, resistance R16, electric capacity C8, electric capacity C9, electric capacity C10 and diode D2 form.
Wherein, described one-level RC filtered electrical routing resistance R9 and electric capacity C6 is formed in parallel, namely between resistance R9 and the electric capacity C6 negative input that is all serially connected in power amplifier P1 and output; Described secondary RC filter circuit is then formed in parallel by resistance R10 and electric capacity C7, namely between resistance R10 and the electric capacity C7 electrode input end that is all serially connected in power amplifier P2 and output.Meanwhile, the negative input of power amplifier P1 is also connected with the electrode input end of power amplifier P2.
The base stage of triode Q5 is connected with the output of power amplifier P1, and its collector electrode is connected with the electrode input end of power amplifier P3 after resistance R11, and its emitter is then connected with the base stage of triode Q6; The collector electrode of triode Q6 is connected with the negative input of power amplifier P3 after resistance R12, meanwhile, and the collector electrode also external+10V voltage of this triode Q6.
The base stage of triode Q7 is connected with the output of power amplifier P2 after resistance R14, and its collector electrode is then connected with the base stage of triode Q6 after resistance R13.Electric capacity C9 is then in parallel with resistance R14, and for guaranteeing effect, this electric capacity C9 preferentially adopts electrochemical capacitor to realize.During connection, the negative pole of electric capacity C9 is connected with the base stage of triode Q7, and its positive pole is then connected with the output of power amplifier P2.The positive pole of electric capacity C8 is connected with the negative input of power amplifier P3, and its negative pole is then connected with the emitter of triode Q6.Meanwhile, the negative pole of this electric capacity C8 and the equal ground connection of emitter of triode Q6.
One end of resistance R15 is connected with the base stage of triode Q7, the voltage of the external-4V of its other end; And one end of resistance R16 is connected with the emitter of triode Q7, the voltage of its other end then external equally-4V.Electric capacity C10 is then in parallel with resistance R16.Equally, described electric capacity C10 and electric capacity C8 also all adopts electrochemical capacitor to realize.
The N pole of described diode D2 is connected with the collector electrode of triode Q5, and its P pole is at the voltage of external-4V.For guaranteeing the normal operation of power amplifier P1 and power amplifier P2, this electric capacity C6 and electric capacity C7 all preferentially adopts patch capacitor to realize.
Described switched current source is used for providing working power to switch power amplifying circuit and driving chip M, it is by transistor Q1, transistor Q2, transistor Q3, DC power supply S, be serially connected in the resistance R1 between the collector electrode of transistor Q1 and the collector electrode of transistor Q2, be serially connected in the RC filter circuit between the emitter of transistor Q1 and the negative pole of DC power supply S, be serially connected in the resistance R2 between the base stage of transistor Q1 and the negative pole of DC power supply S, the resistance R5 in parallel with DC power supply S-phase, be serially connected in the resistance R6 between the emitter of transistor Q3 and the negative pole of DC power supply S, be serially connected in the resistance R4 between the collector electrode of transistor Q3 and the collector electrode of transistor Q2, and positive pole is connected with the collector electrode of transistor Q2, the polar capacitor C2 that negative pole is connected with the negative pole of DC power supply S forms.
Meanwhile, the base stage of this transistor Q2 is also connected with the collector electrode of transistor Q1, and the base stage of transistor Q3 is then connected with the positive pole of DC power supply S with the emitter of transistor Q2 respectively.The positive pole of described polar capacitor C2 will be connected with the electrode input end of power amplifier P1, and the negative pole of polar capacitor C2 then will be connected with the negative input of power amplifier P2.
Described RC filter circuit is then formed in parallel by resistance R3 and electric capacity C1, and namely after resistance R3 and electric capacity C1 parallel connection, an one common port is connected with the emitter of transistor Q1, its another common port is then connected with the negative pole of DC power supply S.The electrode input end of described power amplifier P4 also will be connected with the negative pole of DC power supply S.
As shown in Figure 2, this virtual protection emitter-base bandgap grading manifold type amplifying circuit 20 is primarily of triode Q8, triode Q9, power amplifier P5, power amplifier P6, be serially connected in the resistance R23 between the negative input of power amplifier P5 and output, be serially connected in the polar capacitor C17 between the electrode input end of power amplifier P6 and output, be serially connected in the resistance R22 between the electrode input end of power amplifier P5 and the collector electrode of triode Q8, be serially connected in the resistance R24 between the collector electrode of triode Q8 and the base stage of triode Q9, the electric capacity C15 be in parallel with resistance R24, negative pole is connected with the electrode input end of power amplifier P5, the polar capacitor C14 that positive pole is connected with the emitter of triode Q8 after resistance R25, be serially connected in the resistance R26 between the base stage of triode Q9 and the positive pole of polar capacitor C14, positive pole is connected with the emitter of triode Q9, negative pole is in turn through electric capacity C16 that voltage stabilizing didoe D5 is connected with the output of power amplifier P5 after resistance R27, P pole is connected with the output of power amplifier P6, the diode D6 that N pole is connected with the tie point of resistance R27 with voltage stabilizing didoe D5 after resistance R28 through resistance R29, and P pole is connected with the negative pole of electric capacity C16, the voltage stabilizing didoe D7 that N pole is connected with the tie point of resistance R29 with diode D6 forms.
Wherein, the base stage of described triode Q8 is connected with the positive pole of polar capacitor C14, and its emitter is connected with the emitter of triode Q9, and its collector electrode is connected with the negative input of power amplifier P5; The collector electrode of triode Q9 is connected with the negative input of power amplifier P6, and the electrode input end of power amplifier P6 is connected with the output of power amplifier P5.
During connection, the positive pole of described polar capacitor C14 will be connected with the output of NAND gate IC3, and resistance R29 is then connected with the input of resistance R101 with the tie point of resistance R28.
For guaranteeing result of use, the high-frequency N-channel MOS FET grid drive chip that this driving chip M preferentially adopts Linear Techn Inc. to produce, i.e. LTC4440A integrated chip.This driving chip can with the input voltage work up to 80V, up to can continuous operation during 100V transient state.
As mentioned above, just the present invention can well be realized.
Claims (5)
1. based on beam excitation and the two filtering type raster data model system of virtual protection formula, primarily of switched current source, transformer T, driving chip M, be serially connected with the diode D1 between the VCC pin of driving chip M and BOOST pin, be serially connected with the electric capacity C3 between the BOOST pin of driving chip M and TG pin, be serially connected with the resistance R7 between the TG pin of driving chip M and TS pin, be serially connected with the switch power amplifying circuit between switched current source and driving chip M, and base stage is connected with the TG pin of driving chip M, collector electrode is ground connection after electric capacity C4 and electric capacity C5 in turn, and the transistor Q4 of grounded emitter forms, it is characterized in that, beam excitation formula logic amplifying circuit is also serially connected with between switched current source and driving chip M, two filter amplification circuit (10) and virtual protection emitter-base bandgap grading manifold type amplifying circuit (20) is then also serially connected with between driving chip M and this beam excitation formula logic amplifying circuit, described beam excitation formula logic amplifying circuit is primarily of power amplifier P4, NAND gate IC1, NAND gate IC2, NAND gate IC3, negative pole is connected with the electrode input end of power amplifier P, the polar capacitor C11 of positive pole ground connection after optical diode D3, one end is connected with the positive pole of polar capacitor C11, the resistance R17 of other end ground connection after diode D4, positive pole is connected with the tie point of diode D4 with resistance R17, the polar capacitor C13 of minus earth, one end is connected with the negative input of NAND gate IC1, the resistance R18 that the other end is connected with the electrode input end of power amplifier P4, be serially connected in the resistance R19 between the negative input of power amplifier P4 and output, one end is connected with the output of NAND gate IC1, the resistance R20 that the other end is connected with the negative input of NAND gate IC3, positive pole is connected with the output of NAND gate IC2, the electric capacity C12 that negative pole is connected with the negative input of NAND gate IC3, and one end is connected with the positive pole of polar capacitor C13, the resistance R21 that the other end is connected with the negative input of NAND gate IC2 forms, the electrode input end of described NAND gate IC1 is connected with the negative input of power amplifier P4, and its output is connected with the electrode input end of NAND gate IC2, the electrode input end of NAND gate IC3 is connected with the output of power amplifier P4, and the electrode input end of power amplifier P4 is then connected with switched current source,
Described pair of filter amplification circuit (10) is by triode VT101, triode VT102, triode VT103, triode VT104, triode VT105, triode VT106, triode VT107, operational amplifier P101, operational amplifier P102, operational amplifier P103, one end is as input, the resistance R101 that the other end is connected with the base stage of triode VT107, the electric capacity C101 in parallel with resistance R101, one end is connected with the base stage of triode VT107, the resistance R103 that the other end is connected with the emitter of triode VT107 after resistance R105, one end is connected with the base stage of triode VT107, the resistance R102 that the other end is connected with the collector electrode of triode VT107 after resistance R104, positive pole is connected with the emitter of triode VT107, the electric capacity C104 that negative pole is connected with the tie point of resistance R105 with resistance R103, be serially connected in the resistance R114 between the base stage of triode VT101 and emitter, one end ground connection, the resistance R113 that the other end is connected with the base stage of triode VT102, P pole is connected with the base stage of triode VT103, the diode D101 that N pole is connected with the collector electrode of triode VT107 after electric capacity C103, P pole is connected with the N pole of diode D101 after diode D102, the diode D103 that N pole is connected with the base stage of triode VT106, be serially connected in the resistance R111 between the base stage of triode VT106 and collector electrode, one end ground connection, the resistance R112 that the other end is connected with the emitter of triode VT104, minus earth, the electric capacity C105 that positive pole is connected with the positive pole of electric capacity C104 after resistance R106, one end is connected with the positive pole of electric capacity C105, the resistance R108 that the other end is connected with the negative input end of operational amplifier P101, one end is connected with the positive pole of electric capacity C105, the resistance R107 that the other end is connected with the output of operational amplifier P101, be serially connected in the electric capacity C106 between the negative input end of operational amplifier P101 and output, minus earth, the electric capacity C108 that positive pole is connected with the positive input terminal of operational amplifier P102, negative pole is connected with the output of operational amplifier P101 after resistance R109, the electric capacity C107 that positive pole is connected with the negative input end of operational amplifier P102, one end is connected with the negative pole of electric capacity C107, the resistance R110 that the other end is connected with the positive pole of electric capacity C108, negative pole is connected with the base stage of triode VT107, the electric capacity C102 that positive pole is connected with the emitter of triode VT104 after resistance R115, minus earth, the electric capacity C109 that positive pole is connected with the tie point of resistance R104 with resistance R102 after resistance R116, one end is connected with the positive pole of electric capacity C109, the resistance R118 that the other end is connected with the negative input end of operational amplifier P103, one end is connected with the positive pole of electric capacity C109, the resistance R117 that the other end is connected with the positive input terminal of operational amplifier P103, and the electric capacity C110 be serially connected between the negative input end of operational amplifier P103 and output forms, wherein, the negative pole of electric capacity C104 is also connected with the collector electrode of triode VT105 with the collector electrode of triode VT106 simultaneously, the emitter of triode VT101, the collector electrode of triode VT103 is all connected with the output of operational amplifier P103 with the collector electrode of triode VT104, the positive input terminal ground connection of operational amplifier P103, the base stage of triode VT101 is connected with the emitter of triode VT102, the collector electrode of triode VT101 is connected with the base stage of triode VT102, the collector electrode of triode VT102 is connected with the base stage of triode VT103, the emitter of triode VT103 is connected with the base stage of triode VT104, the emitter of triode VT104 is connected with the emitter of triode VT105, the base stage of triode VT105 is connected with the emitter of triode VT106, the positive input terminal ground connection of operational amplifier P101, the positive pole of electric capacity C107 is also connected with the output of operational amplifier P102 and the N pole of diode D101 simultaneously, the emitter of described triode VT104 is connected as output and with the TD pin of driving chip M,
Described virtual protection emitter-base bandgap grading manifold type amplifying circuit (20) is primarily of triode Q8, triode Q9, power amplifier P5, power amplifier P6, be serially connected in the resistance R23 between the negative input of power amplifier P5 and output, be serially connected in the polar capacitor C17 between the electrode input end of power amplifier P6 and output, be serially connected in the resistance R22 between the electrode input end of power amplifier P5 and the collector electrode of triode Q8, be serially connected in the resistance R24 between the collector electrode of triode Q8 and the base stage of triode Q9, the electric capacity C15 be in parallel with resistance R24, negative pole is connected with the electrode input end of power amplifier P5, the polar capacitor C14 that positive pole is connected with the emitter of triode Q8 after resistance R25, be serially connected in the resistance R26 between the base stage of triode Q9 and the positive pole of polar capacitor C14, positive pole is connected with the emitter of triode Q9, negative pole is in turn through electric capacity C16 that voltage stabilizing didoe D5 is connected with the output of power amplifier P5 after resistance R27, P pole is connected with the output of power amplifier P6, the diode D6 that N pole is connected with the tie point of resistance R27 with voltage stabilizing didoe D5 after resistance R28 through resistance R29, and P pole is connected with the negative pole of electric capacity C16, the voltage stabilizing didoe D7 that N pole is connected with the tie point of resistance R29 with diode D6 forms, the base stage of described triode Q8 is connected with the positive pole of polar capacitor C14, and its emitter is connected with the emitter of triode Q9, and its collector electrode is connected with the negative input of power amplifier P5, the collector electrode of triode Q9 is connected with the negative input of power amplifier P6, and the electrode input end of power amplifier P6 is connected with the output of power amplifier P5, the described positive pole of polar capacitor C14 is connected with the output of NAND gate IC3, and resistance R29 is then connected with the input of resistance R101 with the tie point of resistance R28.
2. according to claim 1 based on beam excitation and the two filtering type raster data model system of virtual protection formula, it is characterized in that, described switch power amplifying circuit is then by power amplifier P1, power amplifier P2, power amplifier P3, be serially connected in the resistance R9 between the output of power amplifier P1 and negative input and electric capacity C6, be serially connected in the resistance R10 between the output of power amplifier P2 and electrode input end and electric capacity C7, base stage is connected with the output of power amplifier P1, the triode Q5 that collector electrode is connected with the electrode input end of power amplifier P3 after resistance R11, base stage is connected with the emitter of triode Q5, the triode Q6 that collector electrode is connected with the negative input of power amplifier P3 after resistance R12, base stage is connected with the output of power amplifier P2 after resistance R14, the triode Q7 that collector electrode is connected with the base stage of triode Q6 after resistance R13, positive pole is connected with the negative input of power amplifier P3, and negative pole is connected with the emitter of triode Q6 and the electric capacity C8 of ground connection, the electric capacity C9 be in parallel with resistance R14, one end is connected with the base stage of triode Q7, the resistance R15 of the external-4V voltage of the other end, one end is connected with the emitter of triode Q7, the resistance R16 of the external-4V voltage of the other end, the electric capacity C10 be in parallel with resistance R16, and N pole is connected with the collector electrode of triode Q5, the diode D2 of the extremely external-4V voltage of P forms, the negative input of described power amplifier P1 is connected with the electrode input end of power amplifier P2, the output of power amplifier P3 is connected with the VCC pin of driving chip M, the collector electrode of triode Q7 is connected with the INP pin of driving chip M, and the electrode input end of power amplifier P1 is then all connected with switched current source with the negative input of power amplifier P2.
3. according to claim 2 based on beam excitation and the two filtering type raster data model system of virtual protection formula, it is characterized in that, the Same Name of Ends of the primary coil of described transformer T is connected with the tie point of electric capacity C5 with electric capacity C4, ground connection after its non-same polarity is then connected with the emitter of transistor Q4; Meanwhile, the emitter of transistor Q4 is also connected with the TS pin of driving chip M, and the secondary coil of described transformer T is provided with tap Y1 and tap Y2.
4. according to claim 3 based on beam excitation and the two filtering type raster data model system of virtual protection formula, it is characterized in that, described switched current source is by transistor Q1, transistor Q2, transistor Q3, DC power supply S, be serially connected in the resistance R1 between the collector electrode of transistor Q1 and the collector electrode of transistor Q2, be serially connected in the RC filter circuit between the emitter of transistor Q1 and the negative pole of DC power supply S, be serially connected in the resistance R2 between the base stage of transistor Q1 and the negative pole of DC power supply S, the resistance R5 in parallel with DC power supply S-phase, be serially connected in the resistance R6 between the emitter of transistor Q3 and the negative pole of DC power supply S, be serially connected in the resistance R4 between the collector electrode of transistor Q3 and the collector electrode of transistor Q2, and positive pole is connected with the collector electrode of transistor Q2, the polar capacitor C2 that negative pole is connected with the negative pole of DC power supply S forms, the base stage of described transistor Q2 is also connected with the collector electrode of transistor Q1, and the base stage of transistor Q3 is then connected with the positive pole of DC power supply S with the emitter of transistor Q2 respectively, the positive pole of described polar capacitor C2 is connected with the electrode input end of power amplifier P1, and its negative pole is then connected with the negative input of power amplifier P2, the electrode input end of described power amplifier P4 is then connected with the negative pole of DC power supply S.
5. according to any one of Claims 1 to 4 based on the two filtering type raster data model system of beam excitation and virtual protection formula, it is characterized in that, described driving chip M is LTC4440A integrated chip.
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| CN201510324152.1A CN104968085A (en) | 2014-11-28 | 2015-06-12 | Double filtering type grid driving system based on light beam excitation and logic protection mode |
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| CN201410714486.5A CN104411064A (en) | 2014-11-28 | 2014-11-28 | Gate drive system based on beam excitation and logic protection mode |
| CN2014107144865 | 2014-11-28 | ||
| CN201510324152.1A CN104968085A (en) | 2014-11-28 | 2015-06-12 | Double filtering type grid driving system based on light beam excitation and logic protection mode |
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| CN104968085A true CN104968085A (en) | 2015-10-07 |
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| CN201510324152.1A Pending CN104968085A (en) | 2014-11-28 | 2015-06-12 | Double filtering type grid driving system based on light beam excitation and logic protection mode |
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Application publication date: 20151007 |