CN104952696A - Wafer cleaning method and wafer cleaning equipment - Google Patents
Wafer cleaning method and wafer cleaning equipment Download PDFInfo
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- CN104952696A CN104952696A CN201410111042.2A CN201410111042A CN104952696A CN 104952696 A CN104952696 A CN 104952696A CN 201410111042 A CN201410111042 A CN 201410111042A CN 104952696 A CN104952696 A CN 104952696A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
- B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
- B08B1/12—Brushes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
- B08B1/20—Cleaning of moving articles, e.g. of moving webs or of objects on a conveyor
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H10P72/0412—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
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Abstract
本发明揭示了一种晶圆清洗方法,使用清洗刷对晶圆的表面进行清洗,晶圆和清洗刷均自转,清洗刷布置在平行于晶圆表面的方向,在晶圆和清洗刷自转的同时,晶圆和清洗刷相对位移,相对位移的范围覆盖晶圆的部分表面且相对位移的方向与清洗刷的长度方向垂直。本发明还揭示了一种晶圆清洗设备,包括清洗腔,位于清洗腔内部的晶圆驱动及支撑机构和清洗刷,清洗腔上具有供晶圆进出的门,晶圆和清洗刷均自转,清洗刷能够接近或者远离晶圆的表面,还包括相对位移装置,相对位移装置在晶圆和清洗刷自转的同时,驱动晶圆和清洗刷相对位移,相对位移的范围覆盖晶圆的部分表面且相对位移的方向与清洗刷的长度方向垂直。
The invention discloses a method for cleaning a wafer. Cleaning brushes are used to clean the surface of the wafer. Both the wafer and the cleaning brushes rotate, and the cleaning brushes are arranged in a direction parallel to the surface of the wafer. At the same time, the wafer and the cleaning brush are relatively displaced, and the range of relative displacement covers part of the surface of the wafer and the direction of relative displacement is perpendicular to the length direction of the cleaning brush. The present invention also discloses a wafer cleaning device, which includes a cleaning chamber, a wafer driving and supporting mechanism and cleaning brushes located inside the cleaning chamber. The cleaning chamber has a door for wafers to enter and exit, and both the wafer and the cleaning brush rotate on their own. The cleaning brush can be close to or away from the surface of the wafer, and also includes a relative displacement device. The relative displacement device drives the relative displacement of the wafer and the cleaning brush while the wafer and the cleaning brush are rotating. The range of relative displacement covers part of the surface of the wafer and The direction of relative displacement is perpendicular to the length direction of the cleaning brush.
Description
技术领域technical field
本发明涉及集成电路制造领域,更具体地说,涉及集成电路中的晶圆清洗技术。The invention relates to the field of integrated circuit manufacturing, more specifically, to the wafer cleaning technology in the integrated circuit.
背景技术Background technique
在晶圆抛光结束后,会在晶圆的表面留下大量的颗粒,这些颗粒必须及时被清除,否则会严重影响后续工艺。同时,晶圆表面的颗粒清洗地是否彻底,直接影响到最终晶圆的合格率。After the wafer is polished, a large number of particles will be left on the surface of the wafer, and these particles must be removed in time, otherwise the subsequent process will be seriously affected. At the same time, whether the particles on the surface of the wafer are cleaned thoroughly will directly affect the yield of the final wafer.
图1揭示了现有技术中对晶圆表面进行清洗的示意图。如图1所示,晶圆101通常呈竖直状态放置在清洗腔102中,清洗腔102的侧面具有门104,门104供晶圆进出清洗腔。在清洗腔的内部设置有一组滚轮106和一对清洗刷108。一组滚轮106用于支撑晶圆101并驱动晶圆101转动,通常滚轮106的数量至少有三个,底部两个顶部一个,三个滚轮106构成对于晶圆101稳定地支撑。三个滚轮106在驱动机构的驱动下转动,通常以相同的速率同方向转动,以带动晶圆101转动。一对清洗刷108能分别绕各自的轴转动,清洗刷108的布置方向与晶圆101的表面平行。通常的清洗过程如下:FIG. 1 discloses a schematic diagram of cleaning a wafer surface in the prior art. As shown in FIG. 1 , a wafer 101 is usually vertically placed in a cleaning chamber 102 . A door 104 is provided on a side of the cleaning chamber 102 , and the door 104 allows the wafer to enter and exit the cleaning chamber. A set of rollers 106 and a pair of cleaning brushes 108 are arranged inside the cleaning chamber. A set of rollers 106 is used to support the wafer 101 and drive the wafer 101 to rotate. Generally, there are at least three rollers 106 , two at the bottom and one at the top. The three rollers 106 form a stable support for the wafer 101 . The three rollers 106 rotate under the drive of the driving mechanism, usually at the same speed and in the same direction, so as to drive the wafer 101 to rotate. A pair of cleaning brushes 108 can respectively rotate around their respective axes, and the arrangement direction of the cleaning brushes 108 is parallel to the surface of the wafer 101 . The usual cleaning process is as follows:
打开清洗腔102的门104,将晶圆101放入清洗腔102中并架设在滚轮106上,滚轮106开始转动,带动晶圆101一起转动。一对清洗刷108合拢使得清洗刷108接近晶圆101的正反表面,此处“接近”的含义是至清洗刷108能够对晶圆101的表面进行有效地清洗,具体的间隔距离、或者两者是否接触均可根据实际情况按照本领域内的常规标准进行选择。清洗刷108绕自身的轴转动。在清洗的过程中,晶圆和清洗刷都转动,结合喷洒的清洗液进行清洗过程。清洗完成后,一对清洗刷108分离,使得有足够的距离将晶圆101取出。再次打开门104,将清洗后的晶圆101取出。Open the door 104 of the cleaning chamber 102, put the wafer 101 into the cleaning chamber 102 and mount it on the roller 106, and the roller 106 starts to rotate, driving the wafer 101 to rotate together. A pair of cleaning brushes 108 are closed so that the cleaning brushes 108 are close to the front and back surfaces of the wafer 101. The meaning of "close" here is that the cleaning brushes 108 can effectively clean the surface of the wafer 101. The specific distance, or two Whether or not to contact can be selected according to the actual situation according to the conventional standards in this field. The cleaning brush 108 rotates about its own axis. During the cleaning process, both the wafer and the cleaning brush rotate, and the cleaning process is carried out in combination with the sprayed cleaning liquid. After the cleaning is completed, the pair of cleaning brushes 108 are separated so that there is enough distance to take out the wafer 101 . The door 104 is opened again, and the cleaned wafer 101 is taken out.
以这种方式进行清洗,晶圆101每自转一周,晶圆101上的每一个点由清洗刷108清洗两次,在一些情况下,这种程度的清洗并不足以对颗粒进行彻底的清洗。如果要提高清洗率,只能通过延长清洗过程的时间的方式,但延长清洗过程的时间无疑会导致产量的下降。如果压缩清洗过程的时间,则不能保证颗粒被清洗干净,可能会影响到晶圆的合格率。于是,目前的清洗方式在工作效率和合格率之间难以做到平衡。In this way of cleaning, each point on the wafer 101 is cleaned twice by the cleaning brush 108 every time the wafer 101 rotates once. In some cases, this degree of cleaning is not enough to clean the particles thoroughly. If you want to increase the cleaning rate, you can only prolong the time of the cleaning process, but prolonging the time of the cleaning process will undoubtedly lead to a decline in production. If the time of the cleaning process is compressed, the particles cannot be guaranteed to be cleaned, which may affect the yield of the wafer. Therefore, the current cleaning method is difficult to achieve a balance between work efficiency and pass rate.
发明内容Contents of the invention
本发明旨在提出一种晶圆的清洗技术,通过调整晶圆和清洗刷的运动方式,使得同样时间内晶圆被清洗的效率更高。The purpose of the present invention is to propose a wafer cleaning technology, by adjusting the movement mode of the wafer and the cleaning brush, the efficiency of wafer cleaning in the same time is higher.
根据本发明的一实施例,提出一种晶圆清洗方法,使用清洗刷对晶圆的表面进行清洗,晶圆绕自身的圆心自转,清洗刷绕自身的转轴自转,清洗刷布置在平行于晶圆表面的方向,晶圆竖直放置,在晶圆和清洗刷自转的同时,晶圆和清洗刷相对位移,相对位移的范围覆盖晶圆的部分表面且相对位移的方向与清洗刷的长度方向垂直。According to an embodiment of the present invention, a wafer cleaning method is proposed. The surface of the wafer is cleaned by using a cleaning brush. The wafer rotates around its own center, and the cleaning brush rotates around its own rotation axis. The direction of the circular surface, the wafer is placed vertically, while the wafer and the cleaning brush rotate, the relative displacement of the wafer and the cleaning brush, the range of relative displacement covers part of the surface of the wafer and the direction of relative displacement is the same as the length direction of the cleaning brush vertical.
在一个实施例中,在晶圆和清洗刷自转的同时,清洗刷在竖直方向往返移动,往返的行程不大于晶圆的直径。或者在晶圆和清洗刷自转的同时,晶圆在竖直方向往返移动,往返的行程不大于晶圆的直径。In one embodiment, while the wafer and the cleaning brush are rotating, the cleaning brush reciprocates in the vertical direction, and the reciprocating stroke is not greater than the diameter of the wafer. Or when the wafer and the cleaning brush rotate, the wafer moves back and forth in the vertical direction, and the round-trip stroke is not greater than the diameter of the wafer.
在一个实施例中,在晶圆的正反两面都配置清洗刷,同时对晶圆的正反两面进行清洗,在清洗时两侧的清洗刷合拢接近晶圆的表面,完成清洗后两侧的清洗刷分离远离晶圆的表面。In one embodiment, cleaning brushes are arranged on both sides of the wafer, and the front and back sides of the wafer are cleaned at the same time. When cleaning, the cleaning brushes on both sides are close to the surface of the wafer. Cleaning brushes separate surfaces away from the wafer.
根据本发明的一实施例,提出一种晶圆清洗设备,包括清洗腔,位于清洗腔内部的晶圆驱动及支撑机构和清洗刷,清洗腔上具有供晶圆进出的门,晶圆驱动及支撑机构支撑晶圆并驱动晶圆绕自身的圆心自转,清洗刷布置在平行于晶圆表面的方向,清洗刷绕自身的转轴转动并且能够接近或者远离晶圆的表面,晶圆竖直放置,该清洗设备还包括相对位移装置,相对位移装置在晶圆和清洗刷自转的同时,驱动晶圆和清洗刷相对位移,相对位移的范围覆盖晶圆的部分表面且相对位移的方向与清洗刷的长度方向垂直。According to an embodiment of the present invention, a wafer cleaning device is proposed, including a cleaning chamber, a wafer driving and supporting mechanism and a cleaning brush located inside the cleaning chamber, the cleaning chamber has a door for wafers to enter and exit, the wafer driving and The support mechanism supports the wafer and drives the wafer to rotate around its own center of circle. The cleaning brush is arranged in a direction parallel to the surface of the wafer. The cleaning brush rotates around its own rotation axis and can approach or stay away from the surface of the wafer. The wafer is placed vertically. The cleaning equipment also includes a relative displacement device. The relative displacement device drives the relative displacement of the wafer and the cleaning brush while the wafer and the cleaning brush rotate. The range of relative displacement covers part of the surface of the wafer and the direction of relative displacement is the same as that of the cleaning brush. The length direction is vertical.
在一个实施例中,晶圆驱动及支撑机构是一组滚轮,一组滚轮支撑晶圆,并通过滚轮的旋转带动晶圆绕自身的圆心自转。相对位移装置是驱动马达,驱动马达连接到晶圆驱动及支撑机构,驱动晶圆驱动及支撑机构连同晶圆在晶圆和清洗刷自转的同时在竖直方向往返移动,往返的行程不大于晶圆的直径。或者驱动马达连接到清洗刷,驱动清洗刷在晶圆和清洗刷自转的同时在竖直方向往返移动,往返的行程不大于晶圆的直径。In one embodiment, the wafer driving and supporting mechanism is a set of rollers, which support the wafer and drive the wafer to rotate around its own center of circle through the rotation of the rollers. The relative displacement device is a driving motor, which is connected to the wafer driving and supporting mechanism, and drives the wafer driving and supporting mechanism together with the wafer to move back and forth in the vertical direction while the wafer and the cleaning brush rotate. The diameter of the circle. Or the driving motor is connected to the cleaning brush, and the cleaning brush is driven to move back and forth in the vertical direction while the wafer and the cleaning brush rotate, and the back and forth stroke is not greater than the diameter of the wafer.
在一个实施例中,清洗刷为两个,分别布置在晶圆的正反两面以同时对晶圆的正反两面进行清洗,在清洗时两个清洗刷合拢接近晶圆的表面,完成清洗后两侧的清洗刷分离远离晶圆的表面。In one embodiment, there are two cleaning brushes, which are respectively arranged on the front and back sides of the wafer to clean the front and back sides of the wafer at the same time. When cleaning, the two cleaning brushes are close to the surface of the wafer. After cleaning, The cleaning brushes on both sides separate away from the surface of the wafer.
本发明的晶圆清洗方法和晶圆清洗装置调整了晶圆和清洗刷的运动方式,在两者自转的同时增加了相对的位移,使得在同样的时间段内,晶圆上的一个点被清洗刷清洗的次数更多,由此来提高清洗效率,获得更好的清洗效果与产量之间的平衡。The wafer cleaning method and the wafer cleaning device of the present invention adjust the movement mode of the wafer and the cleaning brush, and increase the relative displacement while the two rotate, so that in the same time period, a point on the wafer is cleaned The cleaning brushes are cleaned more often, thereby improving cleaning efficiency and obtaining a better balance between cleaning effect and output.
附图说明Description of drawings
本发明上述的以及其他的特征、性质和优势将通过下面结合附图和实施例的描述而变的更加明显,在附图中相同的附图标记始终表示相同的特征,其中:The above and other features, properties and advantages of the present invention will become more apparent from the following description in conjunction with the accompanying drawings and embodiments, in which the same reference numerals represent the same features throughout, wherein:
图1揭示了现有技术中对晶圆进行清洗的示意图。FIG. 1 discloses a schematic diagram of cleaning a wafer in the prior art.
图2揭示了根据本发明的第一实施例,对晶圆进行清洗的示意图,其中晶圆被竖直设置且清洗刷往返移动。Fig. 2 discloses a schematic diagram of cleaning a wafer according to the first embodiment of the present invention, wherein the wafer is vertically arranged and the cleaning brush moves back and forth.
图3揭示了根据本发明的第二实施例,对晶圆进行清洗的示意图,其中晶圆被竖直设置且晶圆往返移动。FIG. 3 discloses a schematic diagram of cleaning a wafer according to a second embodiment of the present invention, wherein the wafer is vertically arranged and the wafer moves back and forth.
图4揭示了根据本发明的第三实施例,对晶圆进行清洗的示意图,其中晶圆被水平设置且清洗刷往返移动。FIG. 4 discloses a schematic diagram of cleaning a wafer according to a third embodiment of the present invention, wherein the wafer is arranged horizontally and the cleaning brush moves back and forth.
图5揭示了根据本发明的第四实施例,对晶圆进行清洗的示意图,其中晶圆被竖直设置且晶圆往返移动。FIG. 5 discloses a schematic diagram of cleaning a wafer according to a fourth embodiment of the present invention, wherein the wafer is vertically arranged and the wafer moves back and forth.
具体实施方式Detailed ways
本发明提出一种晶圆清洗技术,在清洗过程中,在晶圆和清洗刷自转的同时使得晶圆和清洗刷之间也产生相对位移,这样在同样的时间内,晶圆上的一个点被清洗刷清洗的次数增加,能提高清洗效率。The present invention proposes a wafer cleaning technology. During the cleaning process, a relative displacement occurs between the wafer and the cleaning brush while the wafer and the cleaning brush rotate, so that within the same time, a point on the wafer The number of times to be cleaned by the cleaning brush is increased, and the cleaning efficiency can be improved.
第一实施例first embodiment
参考图2所示,揭示了根据本发明的第一实施例对晶圆进行清洗的示意图。第一实施例中提出一种晶圆清洗设备,包括清洗腔202、位于清洗腔内部的晶圆驱动及支撑机构204和清洗刷206。清洗腔202的侧面具有供晶圆201进出的门203。晶圆驱动及支撑机构204支撑晶圆201并驱动晶圆201绕自身的圆心自转,清洗刷206布置在平行于晶圆表面的方向,清洗刷206绕自身的转轴转动并且能够接近或者远离晶圆的表面。以上的结构均与图1所示的现有技术类似。继续参考图2,在第一实施例中,该晶圆清洗设备还包括相对位移装置208,相对位移装置208在晶圆201和清洗刷206自转的同时,还驱动晶圆201和清洗刷206相对位移,并且相对位移的范围覆盖晶圆201的部分表面,相对位移的方向与清洗刷206的长度方向垂直。Referring to FIG. 2 , it discloses a schematic diagram of cleaning a wafer according to a first embodiment of the present invention. In the first embodiment, a wafer cleaning device is proposed, which includes a cleaning chamber 202 , a wafer driving and supporting mechanism 204 and cleaning brushes 206 inside the cleaning chamber. A side of the cleaning chamber 202 has a door 203 for the wafer 201 to enter and exit. The wafer driving and supporting mechanism 204 supports the wafer 201 and drives the wafer 201 to rotate around its own center of circle. The cleaning brush 206 is arranged in a direction parallel to the surface of the wafer. The cleaning brush 206 rotates around its own axis of rotation and can approach or move away from the wafer. s surface. The above structures are similar to the prior art shown in FIG. 1 . Continuing to refer to Fig. 2, in the first embodiment, the wafer cleaning equipment also includes a relative displacement device 208, and the relative displacement device 208 also drives the wafer 201 and the cleaning brush 206 to be relatively opposite while the wafer 201 and the cleaning brush 206 are rotating. displacement, and the range of relative displacement covers part of the surface of wafer 201 , and the direction of relative displacement is perpendicular to the length direction of cleaning brush 206 .
在第一实施例中,晶圆201竖直放置。晶圆驱动及支撑机构204是一组滚轮,可以采用如图1所示的现有技术中的三个滚轮的结构,在底部布置两个滚轮,在顶部布置一个滚轮。该一组滚轮支撑晶圆201,并通过滚轮的旋转带动晶圆绕自身的圆心自转。相对位移装置208是驱动马达,驱动马达连接到晶圆驱动及支撑机构204,在该实施例中,相对位移装置208需要连接到所有的三个滚轮,相对位移装置208驱动晶圆驱动及支撑机构204,即三个滚轮连同晶圆201在晶圆和清洗刷自转的同时在竖直方向往返移动。由于清洗刷206在竖直方向内是保持不动的,晶圆驱动及支撑机构204和晶圆201的移动就形成了晶圆相对于清洗刷的相对位移。相对位移装置208带动晶圆进行往返的行程不大于晶圆的直径。通常,会将这种相对位移的范围控制在晶圆的半径范围内,即以晶圆的圆心为中心,向上或者向下纵向移动各1/3直径的距离。对于圆形的晶圆来说,两端的宽度较窄,在两端进行清洗的话清洗刷的有效工作区域较小,效率不高,因此,将移动范围限定在较宽的中部是有利的。通过这种方式,在同样的时间内(比如晶圆旋转一周),晶圆上的一个点被清洗刷清洗的次数可以大于两次,比传统的方式多,由此提高的清洗效率和清洗效果。晶圆的自转旋转速度范围是5~100转/分钟,清洗刷的自转的旋转速度范围是50~1000转/分钟。相对位移的速度是5~20厘米/分钟。In the first embodiment, the wafer 201 is placed vertically. The wafer driving and supporting mechanism 204 is a set of rollers, which can adopt the structure of three rollers in the prior art as shown in FIG. 1 , with two rollers arranged at the bottom and one roller arranged at the top. The set of rollers supports the wafer 201 , and the rotation of the rollers drives the wafer to rotate around its own center of circle. The relative displacement device 208 is a drive motor, and the drive motor is connected to the wafer drive and support mechanism 204. In this embodiment, the relative displacement device 208 needs to be connected to all three rollers, and the relative displacement device 208 drives the wafer drive and support mechanism. 204, that is, the three rollers together with the wafer 201 move back and forth in the vertical direction while the wafer and the cleaning brush rotate. Since the cleaning brush 206 remains stationary in the vertical direction, the movement of the wafer driving and supporting mechanism 204 and the wafer 201 forms a relative displacement of the wafer relative to the cleaning brush. The relative displacement device 208 drives the wafer back and forth for a stroke not greater than the diameter of the wafer. Usually, the range of this relative displacement is controlled within the radius range of the wafer, that is, the center of the wafer is taken as the center, and the upward or downward longitudinal movement is each 1/3 of the diameter. For a circular wafer, the width of both ends is narrow, and the effective working area of the cleaning brush is small if cleaning is performed at both ends, and the efficiency is not high. Therefore, it is advantageous to limit the moving range to a wider middle part. In this way, within the same period of time (for example, the wafer rotates once), a point on the wafer can be cleaned more than twice by the cleaning brush, which is more than the traditional method, thereby improving the cleaning efficiency and cleaning effect . The rotation speed range of the wafer is 5-100 rpm, and the rotation speed range of the cleaning brush is 50-1000 rpm. The speed of relative displacement is 5-20 cm/min.
第一实施例中的清洗刷206为两个,分别布置在晶圆201的正反两面以同时对晶圆的正反两面进行清洗,在清洗时两个清洗刷206合拢接近晶圆的表面,完成清洗后两侧的清洗刷206分离远离晶圆的表面。There are two cleaning brushes 206 in the first embodiment, which are respectively arranged on the front and back sides of the wafer 201 to clean the front and back sides of the wafer at the same time. When cleaning, the two cleaning brushes 206 are close to the surface of the wafer. After the cleaning is completed, the cleaning brushes 206 on both sides separate the surface away from the wafer.
第一实施例也体现了一种晶圆清洗方法,使用清洗刷对晶圆的表面进行清洗,晶圆被竖直放置,晶圆绕自身的圆心自转,清洗刷绕自身的转轴自转,清洗刷布置在平行于晶圆表面的方向,在晶圆和清洗刷自转的同时,晶圆在竖直方向往返移动,往返的行程不大于晶圆的直径,使得晶圆和清洗刷相对位移且相对位移的范围覆盖晶圆的部分表面且相对位移的方向与清洗刷的长度方向垂直。The first embodiment also embodies a wafer cleaning method, using a cleaning brush to clean the surface of the wafer, the wafer is placed vertically, the wafer rotates around its own center of circle, the cleaning brush rotates around its own rotating shaft, and the cleaning brush Arranged in a direction parallel to the surface of the wafer, while the wafer and the cleaning brush rotate, the wafer moves back and forth in the vertical direction, and the round-trip stroke is not greater than the diameter of the wafer, so that the relative displacement and relative displacement of the wafer and cleaning brush The range covers part of the surface of the wafer and the direction of relative displacement is perpendicular to the length direction of the cleaning brush.
第二实施例second embodiment
参考图3所示,揭示了根据本发明的第二实施例对晶圆进行清洗的示意图。第二实施例中提出一种晶圆清洗设备,包括清洗腔302、位于清洗腔内部的晶圆驱动及支撑机构304和清洗刷306。清洗腔302的侧面具有供晶圆301进出的门303。晶圆驱动及支撑机构304支撑晶圆301并驱动晶圆301绕自身的圆心自转,清洗刷306布置在平行于晶圆表面的方向,清洗刷306绕自身的转轴转动并且能够接近或者远离晶圆的表面。以上的结构均与图1所示的现有技术以及图2所示的第一实施例类似。继续参考图3,在第二实施例中,该晶圆清洗设备还包括相对位移装置308,相对位移装置308在晶圆301和清洗刷306自转的同时,还驱动晶圆301和清洗刷306相对位移,并且相对位移的范围覆盖晶圆301的部分表面。相对位移的方向与清洗刷306的长度方向垂直。与第一实施例不同的是,第二实施例中相对位移装置308驱动清洗刷306在竖直方向往返移动,而晶圆驱动及支撑机构304和晶圆301是不动的。Referring to FIG. 3 , it discloses a schematic diagram of cleaning a wafer according to a second embodiment of the present invention. In the second embodiment, a wafer cleaning device is proposed, which includes a cleaning chamber 302 , a wafer driving and supporting mechanism 304 and cleaning brushes 306 inside the cleaning chamber. A side of the cleaning chamber 302 has a door 303 for the wafer 301 to enter and exit. The wafer drive and support mechanism 304 supports the wafer 301 and drives the wafer 301 to rotate around its own center of circle. The cleaning brush 306 is arranged in a direction parallel to the surface of the wafer. The cleaning brush 306 rotates around its own axis of rotation and can approach or move away from the wafer. s surface. The above structures are similar to the prior art shown in FIG. 1 and the first embodiment shown in FIG. 2 . Continuing to refer to Fig. 3, in the second embodiment, the wafer cleaning equipment also includes a relative displacement device 308, and the relative displacement device 308 also drives the wafer 301 and the cleaning brush 306 to be relative to each other while the wafer 301 and the cleaning brush 306 are rotating. displacement, and the range of relative displacement covers part of the surface of the wafer 301. The direction of relative displacement is perpendicular to the length direction of cleaning brush 306 . Different from the first embodiment, in the second embodiment, the relative displacement device 308 drives the cleaning brush 306 to move back and forth in the vertical direction, while the wafer driving and supporting mechanism 304 and the wafer 301 are stationary.
在第二实施例中,晶圆301也是竖直放置。晶圆驱动及支撑机构304同样是一组滚轮,比如三个滚轮的结构,在底部布置两个滚轮,在顶部布置一个滚轮。滚轮支撑晶圆301,并通过滚轮的旋转带动晶圆绕自身的圆心自转。相对位移装置308是驱动马达,驱动马达连接到清洗刷306,驱动马达驱动清洗刷306在晶圆和清洗刷自转的同时在竖直方向往返移动,往返的行程不大于晶圆301的直径。在第二实施例中晶圆301在竖直方向内是保持不动的,所以清洗刷的移动同样形成与晶圆的相对位移。相对位移装置308带动清洗刷进行往返的行程不大于晶圆的直径。通常,会将这种相对位移的范围控制在晶圆的半径范围内,即以晶圆的圆心为中心,向上或者向下纵向移动各1/3直径的距离。对于圆形的晶圆来说,两端的宽度较窄,在两端进行清洗的话清洗刷的有效工作区域较小,效率不高,因此,将移动范围限定在较宽的中部是有利的。通过这种方式,在同样的时间内(比如晶圆旋转一周),晶圆上的一个点被清洗刷清洗的次数可以大于两次,比传统的方式多,由此提高的清洗效率和清洗效果。晶圆的自转旋转速度范围是5~100转/分钟,清洗刷的自转的旋转速度范围是50~1000转/分钟。相对位移的速度是5~20厘米/分钟。In the second embodiment, the wafer 301 is also placed vertically. The wafer driving and supporting mechanism 304 is also a set of rollers, such as a structure of three rollers, two rollers are arranged at the bottom, and one roller is arranged at the top. The rollers support the wafer 301, and the rotation of the rollers drives the wafer to rotate around its own center of circle. The relative displacement device 308 is a driving motor, which is connected to the cleaning brush 306, and the driving motor drives the cleaning brush 306 to move back and forth in the vertical direction while the wafer and the cleaning brush rotate, and the reciprocating stroke is not greater than the diameter of the wafer 301. In the second embodiment, the wafer 301 remains stationary in the vertical direction, so the movement of the cleaning brush also forms a relative displacement with the wafer. The relative displacement device 308 drives the cleaning brush to make a round trip that is not greater than the diameter of the wafer. Usually, the range of this relative displacement is controlled within the radius range of the wafer, that is, with the center of the wafer as the center, the upward or downward longitudinal movement is each 1/3 the distance of the diameter. For a circular wafer, the width of both ends is narrow, and the effective working area of the cleaning brush is small if cleaning is performed at both ends, and the efficiency is not high. Therefore, it is advantageous to limit the moving range to a wider middle part. In this way, within the same period of time (for example, the wafer rotates once), a point on the wafer can be cleaned more than twice by the cleaning brush, which is more than the traditional method, thereby improving the cleaning efficiency and cleaning effect . The rotation speed range of the wafer is 5-100 rpm, and the rotation speed range of the cleaning brush is 50-1000 rpm. The speed of relative displacement is 5-20 cm/min.
第二实施例中的清洗刷306为两个,分别布置在晶圆301的正反两面以同时对晶圆的正反两面进行清洗,在清洗时两个清洗刷306合拢接近晶圆的表面,完成清洗后两侧的清洗刷306分离远离晶圆的表面。There are two cleaning brushes 306 in the second embodiment, which are respectively arranged on the front and back sides of the wafer 301 to clean the front and back sides of the wafer at the same time. When cleaning, the two cleaning brushes 306 are close to the surface of the wafer. After the cleaning is completed, the cleaning brushes 306 on both sides separate the surface away from the wafer.
第二实施例也体现了一种晶圆清洗方法,使用清洗刷对晶圆的表面进行清洗,晶圆被竖直放置,晶圆绕自身的圆心自转,清洗刷绕自身的转轴自转,清洗刷布置在平行于晶圆表面的方向,在晶圆和清洗刷自转的同时,清洗刷在竖直方向往返移动,往返的行程不大于晶圆的直径,使得晶圆和清洗刷相对位移且相对位移的范围覆盖晶圆的部分表面且相对位移的方向与清洗刷的长度方向垂直。The second embodiment also embodies a wafer cleaning method, using a cleaning brush to clean the surface of the wafer, the wafer is placed vertically, the wafer rotates around its own center of circle, the cleaning brush rotates around its own rotating shaft, the cleaning brush Arranged in a direction parallel to the wafer surface, while the wafer and the cleaning brush rotate, the cleaning brush moves back and forth in the vertical direction, and the round-trip stroke is not greater than the diameter of the wafer, so that the wafer and the cleaning brush are relatively displaced and relatively displaced The range covers part of the surface of the wafer and the direction of relative displacement is perpendicular to the length direction of the cleaning brush.
第三实施例third embodiment
参考图4所示,揭示了根据本发明的第三实施例对晶圆进行清洗的示意图。第三实施例中提出一种晶圆清洗设备,包括清洗腔402、位于清洗腔内部的晶圆驱动及支撑机构404和清洗刷406。清洗腔402的侧面具有供晶圆401进出的门403。晶圆驱动及支撑机构404支撑晶圆401并驱动晶圆401绕自身的圆心自转,清洗刷406布置在平行于晶圆表面的方向,清洗刷406绕自身的转轴转动并且能够接近或者远离晶圆的表面。在第三实施例中,晶圆401被水平放置。该实施例中的晶圆驱动及支撑机构404是夹具,夹具404夹持晶圆401的边缘,夹具404旋转带动晶圆401绕自身的圆心自转。该晶圆清洗设备还包括相对位移装置408,相对位移装置408在晶圆401和清洗刷406自转的同时,还驱动晶圆401和清洗刷406相对位移,并且相对位移的范围覆盖晶圆401的部分表面。相对位移的方向与清洗刷406的长度方向垂直。Referring to FIG. 4 , it discloses a schematic diagram of cleaning a wafer according to a third embodiment of the present invention. In the third embodiment, a wafer cleaning device is proposed, including a cleaning chamber 402 , a wafer driving and supporting mechanism 404 and cleaning brushes 406 inside the cleaning chamber. A side of the cleaning chamber 402 has a door 403 for the wafer 401 to enter and exit. The wafer driving and supporting mechanism 404 supports the wafer 401 and drives the wafer 401 to rotate around its own center of circle. The cleaning brush 406 is arranged in a direction parallel to the surface of the wafer. The cleaning brush 406 rotates around its own axis of rotation and can approach or move away from the wafer. s surface. In the third embodiment, the wafer 401 is placed horizontally. The wafer driving and supporting mechanism 404 in this embodiment is a clamp. The clamp 404 clamps the edge of the wafer 401 . The rotation of the clamp 404 drives the wafer 401 to rotate around its own center of circle. The wafer cleaning equipment also includes a relative displacement device 408. The relative displacement device 408 also drives the relative displacement of the wafer 401 and the cleaning brush 406 while the wafer 401 and the cleaning brush 406 are rotating, and the range of relative displacement covers the area of the wafer 401. part surface. The direction of relative displacement is perpendicular to the length direction of cleaning brush 406 .
在第三实施例中,晶圆401水平放置。夹具夹持晶圆起到支撑和驱动旋转的功能。相对位移装置408是驱动马达,驱动马达408连接到晶圆驱动及支撑机构404,即夹具。驱动马达驱动夹具连同晶圆在晶圆和清洗刷自转的同时在水平方向往返移动,往返的行程不大于晶圆的直径。由于清洗刷406在水平方向内是保持不动的,夹具连同晶圆在水平方向上的移动就形成了晶圆相对于清洗刷的相对位移。在第三实施例中,清洗刷406横向布置,相对位移的方向与清洗刷406的长度方向垂直,在水平面内纵向移动。相对位移装置408带动晶圆进行往返的行程不大于晶圆的直径。通常,会将这种相对位移的范围控制在晶圆的半径范围内,即以晶圆的圆心为中心,水平移动各1/3直径的距离。对于圆形的晶圆来说,两端的宽度较窄,在两端进行清洗的话清洗刷的有效工作区域较小,效率不高,因此,将移动范围限定在较宽的中部是有利的。通过这种方式,在同样的时间内(比如晶圆旋转一周),晶圆上的一个点被清洗刷清洗的次数可以大于两次,比传统的方式多,由此提高的清洗效率和清洗效果。晶圆的自转旋转速度范围是5~100转/分钟,清洗刷的自转的旋转速度范围是50~1000转/分钟。相对位移的速度是5~20厘米/分钟。In the third embodiment, the wafer 401 is placed horizontally. The fixture clamps the wafer to support and drive the rotation. The relative displacement device 408 is a driving motor, and the driving motor 408 is connected to the wafer driving and supporting mechanism 404 , that is, the clamp. The drive motor drives the jig and the wafer to reciprocate in the horizontal direction while the wafer and the cleaning brush rotate, and the reciprocating stroke is not greater than the diameter of the wafer. Since the cleaning brush 406 remains stationary in the horizontal direction, the movement of the clamp along with the wafer in the horizontal direction forms a relative displacement of the wafer relative to the cleaning brush. In the third embodiment, the cleaning brushes 406 are arranged horizontally, the direction of relative displacement is perpendicular to the length direction of the cleaning brushes 406, and they move longitudinally in the horizontal plane. The relative displacement device 408 drives the wafer back and forth for a stroke not greater than the diameter of the wafer. Usually, the range of this relative displacement is controlled within the radius range of the wafer, that is, the center of the wafer is taken as the center, and the distance of each 1/3 diameter is moved horizontally. For a circular wafer, the width at both ends is narrow, and the effective working area of the cleaning brush is small if the cleaning is performed at both ends, and the efficiency is not high. Therefore, it is advantageous to limit the moving range to a wider middle part. In this way, within the same period of time (for example, the wafer rotates once), a point on the wafer can be cleaned more than twice by the cleaning brush, which is more than the traditional method, thereby improving the cleaning efficiency and cleaning effect . The rotation speed range of the wafer is 5-100 rpm, and the rotation speed range of the cleaning brush is 50-1000 rpm. The speed of relative displacement is 5-20 cm/min.
第三实施例中的清洗刷406为两个,分别布置在晶圆401的正反两面以同时对晶圆的正反两面进行清洗,在清洗时两个清洗刷406合拢接近晶圆的表面,完成清洗后两侧的清洗刷406分离远离晶圆的表面。There are two cleaning brushes 406 in the third embodiment, which are respectively arranged on the front and back sides of the wafer 401 to clean the front and back sides of the wafer at the same time. When cleaning, the two cleaning brushes 406 are close to the surface of the wafer. After the cleaning is completed, the cleaning brushes 406 on both sides separate the surface away from the wafer.
第三实施例体现了一种晶圆清洗方法,使用清洗刷对晶圆的表面进行清洗,晶圆被水平放置,晶圆绕自身的圆心自转,清洗刷绕自身的转轴自转,清洗刷布置在平行于晶圆表面的方向,在晶圆和清洗刷自转的同时,晶圆在水平方向往返移动,往返的行程不大于晶圆的直径,使得晶圆和清洗刷相对位移且相对位移的范围覆盖晶圆的部分表面且相对位移的方向与清洗刷的长度方向垂直。The third embodiment embodies a wafer cleaning method. Cleaning brushes are used to clean the surface of the wafer. The wafer is placed horizontally. The wafer rotates around its own center of circle. The cleaning brush rotates around its own rotation axis. The cleaning brush is arranged on Parallel to the direction of the wafer surface, while the wafer and the cleaning brush rotate, the wafer moves back and forth in the horizontal direction, and the round-trip stroke is not greater than the diameter of the wafer, so that the relative displacement of the wafer and the cleaning brush covers Part of the surface of the wafer and the direction of relative displacement is perpendicular to the length direction of the cleaning brush.
第四实施例Fourth embodiment
参考图5所示,揭示了根据本发明的第四实施例对晶圆进行清洗的示意图。第四实施例中提出一种晶圆清洗设备,包括清洗腔502、位于清洗腔内部的晶圆驱动及支撑机构504和清洗刷506。清洗腔502的侧面具有供晶圆501进出的门503。晶圆驱动及支撑机构504支撑晶圆501并驱动晶圆501绕自身的圆心自转,清洗刷506布置在平行于晶圆表面的方向,清洗刷506绕自身的转轴转动并且能够接近或者远离晶圆的表面。与第三实施例类似,第四实施例中晶圆501也是水平放置。该实施例中的晶圆驱动及支撑机构504同样是夹具,夹具504夹持晶圆501的边缘,夹具504旋转带动晶圆501绕自身的圆心自转。该晶圆清洗设备还包括相对位移装置508,相对位移装置508在晶圆501和清洗刷506自转的同时,还驱动晶圆501和清洗刷506相对位移,并且相对位移的范围覆盖晶圆501的部分表面。相对位移的方向与清洗刷506的长度方向垂直。Referring to FIG. 5 , it discloses a schematic diagram of cleaning a wafer according to a fourth embodiment of the present invention. In the fourth embodiment, a wafer cleaning device is proposed, including a cleaning chamber 502 , a wafer driving and supporting mechanism 504 and cleaning brushes 506 inside the cleaning chamber. A side of the cleaning chamber 502 has a door 503 for the wafer 501 to enter and exit. The wafer driving and supporting mechanism 504 supports the wafer 501 and drives the wafer 501 to rotate around its own center of circle. The cleaning brush 506 is arranged in a direction parallel to the surface of the wafer. The cleaning brush 506 rotates around its own axis of rotation and can approach or move away from the wafer. s surface. Similar to the third embodiment, the wafer 501 is also placed horizontally in the fourth embodiment. The wafer driving and supporting mechanism 504 in this embodiment is also a clamp. The clamp 504 clamps the edge of the wafer 501 . The rotation of the clamp 504 drives the wafer 501 to rotate around its own center of circle. The wafer cleaning equipment also includes a relative displacement device 508. The relative displacement device 508 also drives the relative displacement of the wafer 501 and the cleaning brush 506 while the wafer 501 and the cleaning brush 506 are rotating, and the range of the relative displacement covers the wafer 501. part surface. The direction of relative displacement is perpendicular to the length direction of cleaning brush 506 .
在第四实施例中,晶圆501水平放置。夹具夹持晶圆起到支撑和驱动旋转的功能。相对位移装置508是驱动马达,驱动马达508连接清洗刷506。驱动马达驱动清洗刷506在晶圆和清洗刷自转的同时在水平方向往返移动,往返的行程不大于晶圆的直径。由于晶圆501在水平方向内是保持不动的,清洗刷506在水平方向上的移动就形成了晶圆相对于清洗刷的相对位移。在第四实施例中,清洗刷506横向布置,相对位移的方向与清洗刷506的长度方向垂直,在水平面内纵向移动。相对位移装置508带动晶圆进行往返的行程不大于晶圆的直径。通常,会将这种相对位移的范围控制在晶圆的半径范围内,即以晶圆的圆心为中心,水平移动各1/3直径的距离。对于圆形的晶圆来说,两端的宽度较窄,在两端进行清洗的话清洗刷的有效工作区域较小,效率不高,因此,将移动范围限定在较宽的中部是有利的。通过这种方式,在同样的时间内(比如晶圆旋转一周),晶圆上的一个点被清洗刷清洗的次数可以大于两次,比传统的方式多,由此提高的清洗效率和清洗效果。晶圆的自转旋转速度范围是5~100转/分钟,清洗刷的自转的旋转速度范围是50~1000转/分钟。相对位移的速度是5~20厘米/分钟。In the fourth embodiment, the wafer 501 is placed horizontally. The fixture clamps the wafer to support and drive the rotation. The relative displacement device 508 is a driving motor, and the driving motor 508 is connected with the cleaning brush 506 . The driving motor drives the cleaning brush 506 to reciprocate in the horizontal direction while the wafer and the cleaning brush rotate, and the reciprocating stroke is not greater than the diameter of the wafer. Since the wafer 501 remains stationary in the horizontal direction, the movement of the cleaning brush 506 in the horizontal direction forms a relative displacement of the wafer relative to the cleaning brush. In the fourth embodiment, the cleaning brushes 506 are arranged horizontally, the direction of relative displacement is perpendicular to the length direction of the cleaning brushes 506, and they move longitudinally in the horizontal plane. The relative displacement device 508 drives the wafer back and forth for a stroke not greater than the diameter of the wafer. Usually, the range of this relative displacement is controlled within the radius range of the wafer, that is, the center of the wafer is taken as the center, and the distance of each 1/3 diameter is moved horizontally. For a circular wafer, the width at both ends is narrow, and the effective working area of the cleaning brush is small if the cleaning is performed at both ends, and the efficiency is not high. Therefore, it is advantageous to limit the moving range to a wider middle part. In this way, within the same period of time (for example, the wafer rotates once), a point on the wafer can be cleaned more than twice by the cleaning brush, which is more than the traditional method, thereby improving the cleaning efficiency and cleaning effect . The rotation speed range of the wafer is 5-100 rpm, and the rotation speed range of the cleaning brush is 50-1000 rpm. The speed of relative displacement is 5-20 cm/min.
第四实施例中的清洗刷506为两个,分别布置在晶圆501的正反两面以同时对晶圆的正反两面进行清洗,在清洗时两个清洗刷506合拢接近晶圆的表面,完成清洗后两侧的清洗刷506分离远离晶圆的表面。There are two cleaning brushes 506 in the fourth embodiment, which are respectively arranged on the front and back sides of the wafer 501 to clean the front and back sides of the wafer at the same time. When cleaning, the two cleaning brushes 506 are close to the surface of the wafer. After the cleaning is completed, the cleaning brushes 506 on both sides separate the surface away from the wafer.
第四实施例也体现了一种晶圆清洗方法,使用清洗刷对晶圆的表面进行清洗,晶圆被水平放置,晶圆绕自身的圆心自转,清洗刷绕自身的转轴自转,清洗刷布置在平行于晶圆表面的方向,在晶圆和清洗刷自转的同时,清洗刷在水平方向往返移动,往返的行程不大于晶圆的直径,使得晶圆和清洗刷相对位移且相对位移的范围覆盖晶圆的部分表面且相对位移的方向与清洗刷的长度方向垂直。The fourth embodiment also embodies a wafer cleaning method. Cleaning brushes are used to clean the surface of the wafer. The wafer is placed horizontally, the wafer rotates around its own center, the cleaning brush rotates around its own rotation axis, and the cleaning brushes are arranged In the direction parallel to the wafer surface, while the wafer and the cleaning brush are rotating, the cleaning brush moves back and forth in the horizontal direction, and the round-trip stroke is not greater than the diameter of the wafer, so that the relative displacement of the wafer and the cleaning brush and the range of relative displacement Part of the surface of the wafer is covered and the direction of relative displacement is perpendicular to the length direction of the cleaning brush.
本发明的晶圆清洗方法和晶圆清洗装置调整了晶圆和清洗刷的运动方式,在两者自转的同时增加了相对的位移,使得在同样的时间段内,晶圆上的一个点被清洗刷清洗的次数更多,由此来提高清洗效率,获得更好的清洗效果与产量之间的平衡。The wafer cleaning method and the wafer cleaning device of the present invention adjust the movement mode of the wafer and the cleaning brush, and increase the relative displacement while the two rotate, so that in the same time period, a point on the wafer is cleaned The cleaning brushes are cleaned more often, thereby improving cleaning efficiency and obtaining a better balance between cleaning effect and output.
上述实施例是提供给熟悉本领域内的人员来实现或使用本发明的,熟悉本领域的人员可对上述实施例做出种种修改或变化而不脱离本发明的发明思想,因而本发明的保护范围并不被上述实施例所限,而应该是符合权利要求书提到的创新性特征的最大范围。The above-mentioned embodiments are provided to those familiar with the field to implement or use the present invention, and those familiar with the art can make various modifications or changes to the above-mentioned embodiments without departing from the inventive concept of the present invention, thus protection of the present invention The scope is not limited by the examples described above, but should be the widest range consistent with the innovative features set forth in the claims.
Claims (7)
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| CN115458444A (en) * | 2022-09-27 | 2022-12-09 | 北海惠科半导体科技有限公司 | drying equipment |
| CN117340777A (en) * | 2023-11-15 | 2024-01-05 | 上海集成电路装备材料产业创新中心有限公司 | A kind of chemical mechanical grinding equipment |
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