CN104947087B - Extraordinary pressure chemical vapor deposition device - Google Patents

Extraordinary pressure chemical vapor deposition device Download PDF

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CN104947087B
CN104947087B CN201410122524.8A CN201410122524A CN104947087B CN 104947087 B CN104947087 B CN 104947087B CN 201410122524 A CN201410122524 A CN 201410122524A CN 104947087 B CN104947087 B CN 104947087B
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cavity
pressurize
shell
reaction cavity
reaction
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CN104947087A (en
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甘志银
胡少林
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甘志银
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Abstract

The invention discloses a kind of extraordinary pressure chemical vapor deposition device, mainly including shell, pressurize cavity, reaction cavity shell, reaction cavity.The present invention is using the dual chamber structure for setting pressurize cavity and reaction cavity, it can be adjusted by pressure and setting makes reaction cavity be in negative pressure state with respect to pressurize cavity, even if reaction cavity turns into vacuum cavity relative to pressurize cavity, the vacuum sealing design of existing vapor phase growing apparatus reaction cavity can so be retained, design of pressure vessels mainly is carried out to pressurize cavity and pressurize shell, greatly simplify extraordinary pressure chemical vapor deposition device design, the setting of other pressure shell and pressurize cavity also to a certain degree to reaction cavity add together with protective barrier, and the gas in pressurize cavity can use the safer gas of relative response gas, improve equipment safety performance.

Description

Extraordinary pressure chemical vapor deposition device
Technical field
The present invention relates to semi-conducting material manufacturing field, more particularly, to a kind of extraordinary pressure chemical vapor deposition device.
Background technology
Chemical vapor deposition(CVD)Technology collection precision optical machinery, semi-conducting material, vacuum electronic, hydrodynamics, optics, change Learn, computer is multidisciplinary is integrated, be the advanced semiconductor material that a kind of automaticity is high, expensive, integration ofTechnology degree is high Material, opto-electronic device manufacture special equipment.Ideal of the chemical vapor depsotition equipment as compound semiconductor materials epitaxial growth Method, have the characteristics that quality is high, stability is good, reproducible, technique is flexible, energy scale volume production, have become industry life The key core equipment of semiconductor photoelectric device and microwave device is produced, is had broad application prospects and industrialization value.
Group iii nitride semiconductor material(Such as AlN, GaN, InN)Because its broad spectrum is adjustable, multi-functional etc. excellent Good photoelectric properties, the extensive use on semiconductor device, based on (Ga1-y-xAlyInx) N heterojunction structures and associated alloys Device architecture is used to manufacture efficient, single chip integrated energy conversion system(Such as more knot lamination solar cells, laser(LDs) And LED for illumination(LEDs))And high speed optoelectronic device for fiber optic communication etc..At present, III-nitride is main By lower temperature deposition technology such as molecular beam epitaxy(MBE)Or metal-organic chemical vapor deposition equipment(MOCVD)Manufacture, but In low pressure deposition process, the pressure difference of partial pressure is little between reactive gas species, the decomposable process under non-equilibrium reaction process conditions It can be reversed, due to the related group III nitride material chemical instabilities of growth InN and rich In and relatively low decomposition Temperature, cause these Material growths also extremely challenging in low pressure deposition process.There are experiment and theoretical evidence to prove in high pressure (Extraordinary pressure)The In contents in the related group III nitride materials of InN and rich In can be improved under process conditions, and then are improved Related device such as LEDs and LDs performance.
People are to extraordinary pressure chemical vapor deposition at present(Superatmospheric Chemical Vapor Deposition)The research of device is less, and its manufacture difficulty is larger, how to design it is a kind of be simple to manufacture, reliability it is high Extraordinary pressure chemical vapor deposition device is to improving group iii nitride semiconductor performance, research new material has great importance.
The content of the invention
To solve the above problems, the present invention proposes a kind of extraordinary pressure chemical vapor deposition device, mainly include:Outside pressurize Shell, pressurize cavity, gas introduction part, reaction cavity, reaction cavity shell, slide glass dish, substrate, slide glass dish support, heating part Part, heater block support, base, offgas outlet, external interface.The pressurize cavity is located at pressurize shell and reaction cavity shell Between, the operating pressure of pressurize cavity is set higher than the operating pressure of reaction cavity in reaction cavity shell, to ensure reaction chamber " vacuum " state of body phase for pressurize cavity for negative pressure;Gas introduction part is used for reacting gas and its carrier gas, purge gass Body imports reaction cavity;Slide glass dish is located in the reaction cavity, is supported by slide glass dish and provides support, the energy in the slide glass dish Load single or two or more substrate;Heater block is located at below the slide glass dish, for being heated to slide glass dish, so that on State physical-chemical reaction to be smoothed out under required temperature conditionss, supported by heater block and support is provided;Offgas outlet is arranged on Reaction cavity bottom is used for the discharge of reaction end gas;More than one is arranged as required on pressurize shell or base to be used to cool down The external interface of the input and output such as water, detection or Regulate signal, electricity, reacting gas and its carrier gas, when the external interface uses The good sealing of pressurize cavity must be ensured.
Optionally, watch window, convenient situation about observing in pressurize cavity are set on pressurize shell.
The present invention can be adjusted by pressure using the dual chamber structure for setting pressurize cavity and reaction cavity and setting makes Reaction cavity is in negative pressure state with respect to pressurize cavity, even if reaction cavity turns into vacuum cavity relative to pressurize cavity, so The vacuum sealing design of existing gaseous phase deposition device reaction cavity body can be retained, mainly pressurize cavity and pressurize shell are pressed Force container designs, and greatly simplifies extraordinary chemical vapor deposition device design, the setting of pressure shell and pressurize cavity is also one in addition Determine degree and add one of protective barrier to reaction cavity, and the gas in pressurize cavity can use relative response gas more For the gas of safety, equipment safety performance is improved.
Brief description of the drawings
Fig. 1 is the extraordinary pressure chemical vapor deposition schematic device of the present invention.
Fig. 2 is the schematic diagram for increasing watch window on the basis of Fig. 1.
Embodiment
Embodiments of the invention are further illustrated below in conjunction with the accompanying drawings, and Fig. 1 is according to an embodiment of the invention The schematic cross sectional views of extraordinary pressure chemical vapor deposition device.It should be understood that Fig. 1 emphasis disclosed by the invention is illustrated according to this hair The component of the extraordinary pressure chemical vapor deposition device of a bright embodiment, that is to say, that these accompanying drawings are not intended to illustrate Each single component in excess of export aumospheric pressure cvd device.
As shown in figure 1, the extraordinary pressure chemical vapor deposition device of the present invention mainly includes:Pressurize shell 1, pressurize cavity 2, gas Body introduction part 3, reaction cavity 4, reaction cavity shell 5, slide glass dish 6, substrate 7, slide glass dish support 8, heater block 9, heating Member supporting 10, base 11, offgas outlet 12, external interface 13.The pressurize cavity 2 is located at pressurize shell 1 and reaction cavity Between shell 5, the operating pressure of pressurize cavity 2 is set higher than the operating pressure of reaction cavity 4 in reaction cavity shell 5, to protect Reaction cavity 4 is demonstrate,proved relative to " vacuum " state that pressurize cavity 2 is negative pressure;Gas introduction part 3 be used for reacting gas and its Carrier gas, purge gas import reaction cavity 4;Slide glass dish 6 is located in the reaction cavity 4, and support is provided by slide glass dish support 8, Single or two or more substrate 7 can be loaded in the slide glass dish 6;Heater block 9 positioned at the lower section of the slide glass dish 6, for pair Slide glass dish 6 is heated, so that above-mentioned physical-chemical reaction is smoothed out under required temperature conditionss, 10 are supported by heater block Support is provided;Offgas outlet 12 is arranged on the discharge that the bottom of reaction cavity 4 is used for reaction end gas;In pressurize shell 1 or base 11 On be arranged as required to more than one and be used for the input and output such as cooling water, detection or Regulate signal, electricity, reacting gas and its carrier gas External interface 13, the external interface 13 must ensure the good sealing of pressurize cavity 2 when using.
In the device course of work, the operating pressure of the reaction cavity 4 of extraordinary pressure chemical vapor deposition device is in atmospheric pressure(Often Pressure)During the above, the operating pressure of the pressure of pressurize cavity 2 and reaction cavity 4 is set to keep certain positive pressure difference, or set one The fixed pressure of pressurize cavity 2, the pressure are more than the operating pressure maximum of reaction cavity 4.So, adjust and set by pressure Reaction cavity 4 is set to be in negative pressure state with respect to pressurize cavity 2, even if reaction cavity 4 turns into vacuum chamber relative to pressurize cavity 2 Body.
Fig. 2 is the setting that watch window 14 is added on the basis of Fig. 1, convenient situation about observing in pressurize cavity 2.
It is described above to be merely exemplary for the purpose of the present invention, and nonrestrictive, the reason of those of ordinary skill in the art Solution, in the case where not departing from the spirit and scope that claim is limited, change, modification can be made according to the disclosure above content Or it is equivalent, but fall within protection scope of the present invention.

Claims (3)

1. a kind of extraordinary pressure chemical vapor deposition device, mainly includes:Pressurize shell (1), pressurize cavity (2), gas introduction part Part (3), reaction cavity (4), reaction cavity shell (5), slide glass dish (6), substrate (7), slide glass dish support (8), heater block (9), heater block support (10), base (11), offgas outlet (12), external interface (13), it is characterised in that the pressurize chamber Body (2) is located between pressurize shell (1) and reaction cavity shell (5), sets the operating pressure of pressurize cavity (2) to be higher than reaction chamber The operating pressure of body case (5) interior reaction cavity (4), to ensure reaction cavity (4) relative to pressurize cavity (2) for negative pressure shape State.
2. extraordinary pressure chemical vapor deposition device according to claim 1, it is characterised in that the pressurize shell (1) or bottom More than one is arranged as required on seat (11) and is used for cooling water, detection or Regulate signal, electricity, reacting gas and its carrier gas input The external interface (13) of output, the external interface (13) must ensure the good sealing of pressurize cavity (2) when using.
3. extraordinary pressure chemical vapor deposition device according to claim 1 or 2, it is characterised in that the pressurize shell (1) On be provided with watch window (14).
CN201410122524.8A 2014-03-31 2014-03-31 Extraordinary pressure chemical vapor deposition device Active CN104947087B (en)

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CN104947087B true CN104947087B (en) 2018-03-06

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107345293B (en) * 2016-05-06 2019-07-05 北京北方华创微电子装备有限公司 Reaction chamber and semiconductor processing equipment

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5614257A (en) * 1991-08-09 1997-03-25 Applied Materials, Inc Low temperature, high pressure silicon deposition method
CN102021530A (en) * 2009-09-11 2011-04-20 甘志银 Reaction chamber of multiple-gas coupling metal metallorganic chemical vapor deposition equipment
CN102674359A (en) * 2012-05-09 2012-09-19 天津大学 Device and method for cooing tail gas recovery liquid of polysilicon reduction furnace with inner tank
CN203174051U (en) * 2013-03-22 2013-09-04 东方电气集团东方锅炉股份有限公司 Coal water slurry water-cooled wall gasification furnace in waste boiler process

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5614257A (en) * 1991-08-09 1997-03-25 Applied Materials, Inc Low temperature, high pressure silicon deposition method
CN102021530A (en) * 2009-09-11 2011-04-20 甘志银 Reaction chamber of multiple-gas coupling metal metallorganic chemical vapor deposition equipment
CN102674359A (en) * 2012-05-09 2012-09-19 天津大学 Device and method for cooing tail gas recovery liquid of polysilicon reduction furnace with inner tank
CN203174051U (en) * 2013-03-22 2013-09-04 东方电气集团东方锅炉股份有限公司 Coal water slurry water-cooled wall gasification furnace in waste boiler process

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