CN104947087B - Extraordinary pressure chemical vapor deposition device - Google Patents
Extraordinary pressure chemical vapor deposition device Download PDFInfo
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- CN104947087B CN104947087B CN201410122524.8A CN201410122524A CN104947087B CN 104947087 B CN104947087 B CN 104947087B CN 201410122524 A CN201410122524 A CN 201410122524A CN 104947087 B CN104947087 B CN 104947087B
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- Prior art keywords
- cavity
- pressurize
- shell
- reaction cavity
- reaction
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- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 20
- 238000006243 chemical reaction Methods 0.000 claims abstract description 47
- 238000007789 sealing Methods 0.000 claims abstract description 5
- 239000007789 gas Substances 0.000 claims description 17
- 239000011521 glass Substances 0.000 claims description 16
- 239000012159 carrier gas Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 238000001514 detection method Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 239000000498 cooling water Substances 0.000 claims description 2
- 230000001681 protective Effects 0.000 abstract description 2
- 230000000717 retained Effects 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 description 4
- 229950008597 drug INN Drugs 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000012010 growth Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006011 modification reaction Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000003287 optical Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
The invention discloses a kind of extraordinary pressure chemical vapor deposition device, mainly including shell, pressurize cavity, reaction cavity shell, reaction cavity.The present invention is using the dual chamber structure for setting pressurize cavity and reaction cavity, it can be adjusted by pressure and setting makes reaction cavity be in negative pressure state with respect to pressurize cavity, even if reaction cavity turns into vacuum cavity relative to pressurize cavity, the vacuum sealing design of existing vapor phase growing apparatus reaction cavity can so be retained, design of pressure vessels mainly is carried out to pressurize cavity and pressurize shell, greatly simplify extraordinary pressure chemical vapor deposition device design, the setting of other pressure shell and pressurize cavity also to a certain degree to reaction cavity add together with protective barrier, and the gas in pressurize cavity can use the safer gas of relative response gas, improve equipment safety performance.
Description
Technical field
The present invention relates to semi-conducting material manufacturing field, more particularly, to a kind of extraordinary pressure chemical vapor deposition device.
Background technology
Chemical vapor deposition（CVD）Technology collection precision optical machinery, semi-conducting material, vacuum electronic, hydrodynamics, optics, change
Learn, computer is multidisciplinary is integrated, be the advanced semiconductor material that a kind of automaticity is high, expensive, integration ofTechnology degree is high
Material, opto-electronic device manufacture special equipment.Ideal of the chemical vapor depsotition equipment as compound semiconductor materials epitaxial growth
Method, have the characteristics that quality is high, stability is good, reproducible, technique is flexible, energy scale volume production, have become industry life
The key core equipment of semiconductor photoelectric device and microwave device is produced, is had broad application prospects and industrialization value.
Group iii nitride semiconductor material（Such as AlN, GaN, InN）Because its broad spectrum is adjustable, multi-functional etc. excellent
Good photoelectric properties, the extensive use on semiconductor device, based on (Ga1-y-xAlyInx) N heterojunction structures and associated alloys
Device architecture is used to manufacture efficient, single chip integrated energy conversion system（Such as more knot lamination solar cells, laser（LDs）
And LED for illumination（LEDs））And high speed optoelectronic device for fiber optic communication etc..At present, III-nitride is main
By lower temperature deposition technology such as molecular beam epitaxy（MBE）Or metal-organic chemical vapor deposition equipment（MOCVD）Manufacture, but
In low pressure deposition process, the pressure difference of partial pressure is little between reactive gas species, the decomposable process under non-equilibrium reaction process conditions
It can be reversed, due to the related group III nitride material chemical instabilities of growth InN and rich In and relatively low decomposition
Temperature, cause these Material growths also extremely challenging in low pressure deposition process.There are experiment and theoretical evidence to prove in high pressure
（Extraordinary pressure）The In contents in the related group III nitride materials of InN and rich In can be improved under process conditions, and then are improved
Related device such as LEDs and LDs performance.
People are to extraordinary pressure chemical vapor deposition at present（Superatmospheric Chemical Vapor
Deposition）The research of device is less, and its manufacture difficulty is larger, how to design it is a kind of be simple to manufacture, reliability it is high
Extraordinary pressure chemical vapor deposition device is to improving group iii nitride semiconductor performance, research new material has great importance.
The content of the invention
To solve the above problems, the present invention proposes a kind of extraordinary pressure chemical vapor deposition device, mainly include：Outside pressurize
Shell, pressurize cavity, gas introduction part, reaction cavity, reaction cavity shell, slide glass dish, substrate, slide glass dish support, heating part
Part, heater block support, base, offgas outlet, external interface.The pressurize cavity is located at pressurize shell and reaction cavity shell
Between, the operating pressure of pressurize cavity is set higher than the operating pressure of reaction cavity in reaction cavity shell, to ensure reaction chamber
" vacuum " state of body phase for pressurize cavity for negative pressure；Gas introduction part is used for reacting gas and its carrier gas, purge gass
Body imports reaction cavity；Slide glass dish is located in the reaction cavity, is supported by slide glass dish and provides support, the energy in the slide glass dish
Load single or two or more substrate；Heater block is located at below the slide glass dish, for being heated to slide glass dish, so that on
State physical-chemical reaction to be smoothed out under required temperature conditionss, supported by heater block and support is provided；Offgas outlet is arranged on
Reaction cavity bottom is used for the discharge of reaction end gas；More than one is arranged as required on pressurize shell or base to be used to cool down
The external interface of the input and output such as water, detection or Regulate signal, electricity, reacting gas and its carrier gas, when the external interface uses
The good sealing of pressurize cavity must be ensured.
Optionally, watch window, convenient situation about observing in pressurize cavity are set on pressurize shell.
The present invention can be adjusted by pressure using the dual chamber structure for setting pressurize cavity and reaction cavity and setting makes
Reaction cavity is in negative pressure state with respect to pressurize cavity, even if reaction cavity turns into vacuum cavity relative to pressurize cavity, so
The vacuum sealing design of existing gaseous phase deposition device reaction cavity body can be retained, mainly pressurize cavity and pressurize shell are pressed
Force container designs, and greatly simplifies extraordinary chemical vapor deposition device design, the setting of pressure shell and pressurize cavity is also one in addition
Determine degree and add one of protective barrier to reaction cavity, and the gas in pressurize cavity can use relative response gas more
For the gas of safety, equipment safety performance is improved.
Brief description of the drawings
Fig. 1 is the extraordinary pressure chemical vapor deposition schematic device of the present invention.
Fig. 2 is the schematic diagram for increasing watch window on the basis of Fig. 1.
Embodiment
Embodiments of the invention are further illustrated below in conjunction with the accompanying drawings, and Fig. 1 is according to an embodiment of the invention
The schematic cross sectional views of extraordinary pressure chemical vapor deposition device.It should be understood that Fig. 1 emphasis disclosed by the invention is illustrated according to this hair
The component of the extraordinary pressure chemical vapor deposition device of a bright embodiment, that is to say, that these accompanying drawings are not intended to illustrate
Each single component in excess of export aumospheric pressure cvd device.
As shown in figure 1, the extraordinary pressure chemical vapor deposition device of the present invention mainly includes：Pressurize shell 1, pressurize cavity 2, gas
Body introduction part 3, reaction cavity 4, reaction cavity shell 5, slide glass dish 6, substrate 7, slide glass dish support 8, heater block 9, heating
Member supporting 10, base 11, offgas outlet 12, external interface 13.The pressurize cavity 2 is located at pressurize shell 1 and reaction cavity
Between shell 5, the operating pressure of pressurize cavity 2 is set higher than the operating pressure of reaction cavity 4 in reaction cavity shell 5, to protect
Reaction cavity 4 is demonstrate,proved relative to " vacuum " state that pressurize cavity 2 is negative pressure；Gas introduction part 3 be used for reacting gas and its
Carrier gas, purge gas import reaction cavity 4；Slide glass dish 6 is located in the reaction cavity 4, and support is provided by slide glass dish support 8,
Single or two or more substrate 7 can be loaded in the slide glass dish 6；Heater block 9 positioned at the lower section of the slide glass dish 6, for pair
Slide glass dish 6 is heated, so that above-mentioned physical-chemical reaction is smoothed out under required temperature conditionss, 10 are supported by heater block
Support is provided；Offgas outlet 12 is arranged on the discharge that the bottom of reaction cavity 4 is used for reaction end gas；In pressurize shell 1 or base 11
On be arranged as required to more than one and be used for the input and output such as cooling water, detection or Regulate signal, electricity, reacting gas and its carrier gas
External interface 13, the external interface 13 must ensure the good sealing of pressurize cavity 2 when using.
In the device course of work, the operating pressure of the reaction cavity 4 of extraordinary pressure chemical vapor deposition device is in atmospheric pressure（Often
Pressure）During the above, the operating pressure of the pressure of pressurize cavity 2 and reaction cavity 4 is set to keep certain positive pressure difference, or set one
The fixed pressure of pressurize cavity 2, the pressure are more than the operating pressure maximum of reaction cavity 4.So, adjust and set by pressure
Reaction cavity 4 is set to be in negative pressure state with respect to pressurize cavity 2, even if reaction cavity 4 turns into vacuum chamber relative to pressurize cavity 2
Body.
Fig. 2 is the setting that watch window 14 is added on the basis of Fig. 1, convenient situation about observing in pressurize cavity 2.
It is described above to be merely exemplary for the purpose of the present invention, and nonrestrictive, the reason of those of ordinary skill in the art
Solution, in the case where not departing from the spirit and scope that claim is limited, change, modification can be made according to the disclosure above content
Or it is equivalent, but fall within protection scope of the present invention.
Claims (3)
1. a kind of extraordinary pressure chemical vapor deposition device, mainly includes：Pressurize shell (1), pressurize cavity (2), gas introduction part
Part (3), reaction cavity (4), reaction cavity shell (5), slide glass dish (6), substrate (7), slide glass dish support (8), heater block
(9), heater block support (10), base (11), offgas outlet (12), external interface (13), it is characterised in that the pressurize chamber
Body (2) is located between pressurize shell (1) and reaction cavity shell (5), sets the operating pressure of pressurize cavity (2) to be higher than reaction chamber
The operating pressure of body case (5) interior reaction cavity (4), to ensure reaction cavity (4) relative to pressurize cavity (2) for negative pressure shape
State.
2. extraordinary pressure chemical vapor deposition device according to claim 1, it is characterised in that the pressurize shell (1) or bottom
More than one is arranged as required on seat (11) and is used for cooling water, detection or Regulate signal, electricity, reacting gas and its carrier gas input
The external interface (13) of output, the external interface (13) must ensure the good sealing of pressurize cavity (2) when using.
3. extraordinary pressure chemical vapor deposition device according to claim 1 or 2, it is characterised in that the pressurize shell (1)
On be provided with watch window (14).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410122524.8A CN104947087B (en) | 2014-03-31 | 2014-03-31 | Extraordinary pressure chemical vapor deposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410122524.8A CN104947087B (en) | 2014-03-31 | 2014-03-31 | Extraordinary pressure chemical vapor deposition device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104947087A CN104947087A (en) | 2015-09-30 |
| CN104947087B true CN104947087B (en) | 2018-03-06 |
Family
ID=54162137
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410122524.8A Active CN104947087B (en) | 2014-03-31 | 2014-03-31 | Extraordinary pressure chemical vapor deposition device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104947087B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107345293B (en) * | 2016-05-06 | 2019-07-05 | 北京北方华创微电子装备有限公司 | Reaction chamber and semiconductor processing equipment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5614257A (en) * | 1991-08-09 | 1997-03-25 | Applied Materials, Inc | Low temperature, high pressure silicon deposition method |
| CN102021530A (en) * | 2009-09-11 | 2011-04-20 | 甘志银 | Reaction chamber of multiple-gas coupling metal metallorganic chemical vapor deposition equipment |
| CN102674359A (en) * | 2012-05-09 | 2012-09-19 | 天津大学 | Device and method for cooing tail gas recovery liquid of polysilicon reduction furnace with inner tank |
| CN203174051U (en) * | 2013-03-22 | 2013-09-04 | 东方电气集团东方锅炉股份有限公司 | Coal water slurry water-cooled wall gasification furnace in waste boiler process |
-
2014
- 2014-03-31 CN CN201410122524.8A patent/CN104947087B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5614257A (en) * | 1991-08-09 | 1997-03-25 | Applied Materials, Inc | Low temperature, high pressure silicon deposition method |
| CN102021530A (en) * | 2009-09-11 | 2011-04-20 | 甘志银 | Reaction chamber of multiple-gas coupling metal metallorganic chemical vapor deposition equipment |
| CN102674359A (en) * | 2012-05-09 | 2012-09-19 | 天津大学 | Device and method for cooing tail gas recovery liquid of polysilicon reduction furnace with inner tank |
| CN203174051U (en) * | 2013-03-22 | 2013-09-04 | 东方电气集团东方锅炉股份有限公司 | Coal water slurry water-cooled wall gasification furnace in waste boiler process |
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| Publication number | Publication date |
|---|---|
| CN104947087A (en) | 2015-09-30 |
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