CN104944362A - Method for manufacturing MEMS (Micro-Electro-Mechanical System) device structure - Google Patents
Method for manufacturing MEMS (Micro-Electro-Mechanical System) device structure Download PDFInfo
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- CN104944362A CN104944362A CN201410114998.8A CN201410114998A CN104944362A CN 104944362 A CN104944362 A CN 104944362A CN 201410114998 A CN201410114998 A CN 201410114998A CN 104944362 A CN104944362 A CN 104944362A
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Abstract
The invention provides a method for manufacturing an MEMS (Micro-Electro-Mechanical System) device structure. The method comprises the steps: (1) providing a first semiconductor substrate and a second semiconductor substrate, wherein a microstructure area, a metal bonding layer and a metal welding pad are formed on the surface of the first semiconductor substrate, and the surface of the second semiconductor substrate is provided with an annular bulge; (2) removing first metal oxide layers from the surface of the metal bonding layer and the surface of the metal welding pad; (3) carrying out a bonding process; (4) carrying out a cutting process, wherein semiconductor particles are adsorbed by the surface of the metal welding pad during cutting; (5) oxidizing the semiconductor particles to form oxide particles, and forming a second metal oxide layer on the surface of the metal welding pad; (6) removing the oxide particles through acidic chemical corrosion; and (7) removing the second metal oxide layer through alkaline chemical corrosion. According to the method, the semiconductor particles adsorbed by the metal welding pad are removed through oxidizing, acid corrosion and alkali corrosion processes, so that the defect that the metal welding pad is liable to corrosion is effectively avoided in the case of not affecting the performance of an MEMS device and the performance of an aluminum welding pad. The method is simple in process and is applicable to industrial production.
Description
Technical field
The invention belongs to MEMS and manufacture field, particularly relate to a kind of preparation method of MEMS structure.
Background technology
MEMS (MEMS, Micro-Electro-Mechanical System) is the manufacturing technology platform of a kind of advanced person.It grows up based on semiconductor fabrication.MEMS technology have employed a series of prior art and the material such as photoetching, burn into film in semiconductor technology, and therefore from manufacturing technology itself, manufacturing technology basic in MEMS is ripe.But MEMS more lays particular emphasis on ultraprecise machining, and microelectronics, material, mechanics, chemistry, mechanics subjects field to be related to.The physical each branch such as power, electricity, light, magnetic, sound, surface under minute yardstick is also expanded in its subject face to.
MEMS is the mechanical system of micron size, wherein also comprises the system that difform three-dimensional flat plate printing produces.The size of these systems is generally between micron to millimeter.Physics experience daily in this magnitude range is often inapplicable.Area such as due to MEMS is more much bigger than the mechanical system in general daily life to volume ratio, and its superficial phenomenon is as important in inertia or thermal capacity etc. in electrostatic, wetting geometric ratio volumetric phenomenon.They are generally manufacture by being similar to technology such as the technology such as surface micro-fabrication, build micro Process of producing semiconductor.Comprising the silicon processing method changed as calendering, plating, wet etching, dry ecthing, spark machined etc.MEMS refers to and integrates microsensor, actuator and signal transacting and control circuit, interface circuit, communicates and the Micro Electro Mechanical System of power supply, is an independently intelligence system., actuator suitable primarily of sensing and micro-energy three parts composition.MEMS has following basic characteristics, microminiaturized, intelligent, multi-functional, high integration.MEMS, it has new principle, the element of New function and system microcomputer electric system by the microminiaturization of system, integrated exploration.MEMS relates to the application such as Aero-Space, information communication, biochemistry, medical treatment, automatically control, consumer electronics and weapons.The manufacturing process of MEMS mainly contains integrated circuit technology, micrometer/nanometer manufacturing process, gadget technique and other special process work posts.Micro electro mechanical system (MEMS) technology foundation main will comprise design and emulation technology, material and process technology, encapsulate and mounting technology, Measure and test technology, integrated with systems technology etc.
The preparation method of existing a kind of MEMS structure is as follows:
Step one, Semiconductor substrate and bonded substrate are provided, described semiconductor substrate surface is formed with aluminium bonded layer and is positioned at the aluminum pad of described aluminium bonded layer periphery, described aluminum pad and aluminium bonded layer surface coverage have device architecture, and described bonded substrate surface has and can form with described aluminium bonded layer the annular protrusion be sealed and matched;
Step 2, adopt photoetching process to be removed by the device architecture on described aluminum pad and aluminium bonded layer surface, expose described aluminum pad and aluminium bonded layer, now, aluminum pad and aluminium bonded layer surface can form one deck alumina layer;
Step 3, in order to strengthen bond strength, needs to adopt DHF technique to remove the alumina layer on described aluminium bonded layer surface, non-selective due to DHF technique, and meanwhile, the alumina layer on described aluminum pad surface also can be removed;
Step 4, by Semiconductor substrate and described bonded substrate described in described aluminium bonded layer and annular protrusion bonding, forms cavity structure;
Step 5, cuts described bonded substrate, removes the semi-conducting material of described annular protrusion periphery, exposes the aluminum pad of described semiconductor substrate surface, used for follow-up line.
The MEMS structure obtained by above method has following shortcoming: after DHF technique removes the metal oxide layer on described aluminum pad surface, characteristic and the electromotive force on aluminum pad surface can be changed, make it easily be adsorbed on the dust granules that in the process of cutting technique, bonded substrate produces, finally cause aluminum pad be corroded and affect performance.
In order to overcome above defective workmanship, a kind of scheme of solution increases flushing dynamics in flushing process after dicing, but this way is easy to cause some device architectures to be destroyed, and cause whole component failure.
In view of above defect, the object of the present invention is to provide a kind of preparation method of the MEMS structure that can effectively solve the problem.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of preparation method of MEMS structure, for solving the problem affecting device performance in prior art due to metal pad absorption semiconductor dust granules.
For achieving the above object and other relevant objects, the invention provides a kind of preparation method of MEMS structure, comprise step:
1) the first Semiconductor substrate and the second Semiconductor substrate are provided, described first semiconductor substrate surface is formed with microstructured area, is surrounded on the metal bonding layer of described microstructured area and is positioned at the metal pad of described metal bonding layer periphery, and described second semiconductor substrate surface has and can form with described metal bonding layer the annular protrusion be sealed and matched;
2) pre-cleaning processes is adopted to remove first metal oxide layer on described metal bonding layer and metal pad surface;
3) by the first Semiconductor substrate and the second Semiconductor substrate described in described metal bonding layer and annular protrusion bonding;
4) carry out cutting technique to described second Semiconductor substrate, to remove the semi-conducting material of described annular protrusion periphery, during cutting, described metal pad adsorption has semiconductor grain;
5) adopt oxidation technology that described semiconductor grain is oxidized and form oxidation particle, and make described metal pad surface oxidation form the second metal oxide layer;
6) acidic chemical etching process is adopted to remove described oxidation particle;
7) alkali electroless etching process is adopted to remove described second metal oxide layer.
As a kind of preferred version of the preparation method of MEMS structure of the present invention, the material of described first Semiconductor substrate and the second Semiconductor substrate is silicon.
As a kind of preferred version of the preparation method of MEMS structure of the present invention, the material of described metal pad and described metal bonding layer is aluminium.
As a kind of preferred version of the preparation method of MEMS structure of the present invention, step 2) described in pre-cleaning processes be dilute hydrofluoric acid cleaning DHF technique.
As a kind of preferred version of the preparation method of MEMS structure of the present invention, step 3) adopts gold silicon eutectic bonding technology to carry out bonding to described metal bonding layer and annular protrusion.
As a kind of preferred version of the preparation method of MEMS structure of the present invention, the cutting technique described in step 4) is mechanical cutting processes.
As a kind of preferred version of the preparation method of MEMS structure of the present invention, the oxidation technology described in step 5) is boiler tube thermal oxidation technology.
As a kind of preferred version of the preparation method of MEMS structure of the present invention, the semiconductor grain after step 6) adopts dilute hydrofluoric acid cleaning DHF technique to remove oxidation.
As a kind of preferred version of the preparation method of MEMS structure of the present invention, in described first Semiconductor substrate, be also formed with cmos device structure.
As mentioned above, the invention provides a kind of preparation method of MEMS structure, comprise step: 1) provide the first Semiconductor substrate and the second Semiconductor substrate, described first semiconductor substrate surface is formed with microstructured area, is surrounded on the metal bonding layer of described microstructured area and is positioned at the metal pad of described metal bonding layer periphery, and described second semiconductor substrate surface has and can form with described metal bonding layer the annular protrusion be sealed and matched; 2) pre-cleaning processes is adopted to remove first metal oxide layer on described metal bonding layer and metal pad surface; 3) by the first Semiconductor substrate and the second Semiconductor substrate described in described metal bonding layer and annular protrusion bonding; 4) carry out cutting technique to described second Semiconductor substrate, to remove the semi-conducting material of described annular protrusion periphery, during cutting, described metal pad adsorption has semiconductor grain; 5) adopt oxidation technology that described semiconductor grain is oxidized and form oxidation particle, and make described metal pad surface oxidation form the second metal oxide layer; 6) acidic chemical etching process is adopted to remove described oxidation particle; 7) alkali electroless etching process is adopted to remove described second metal oxide layer.The present invention eliminates the semiconductor grain of metal pad adsorption successively by oxidation technology, sour corrosion technique and alkaline corrosion technique, when not affecting MEMS performance and aluminum pad performance, effectively can avoid the defect causing metal pad to be corroded due to semiconductor grain, present invention process is simple, is applicable to industrial production.
Accompanying drawing explanation
Fig. 1 is shown as each steps flow chart schematic diagram of preparation method of MEMS structure of the present invention.
The structural representation that the preparation method step 1) that Fig. 2 is shown as MEMS structure of the present invention presents.
Fig. 3 is shown as the preparation method step 2 of MEMS structure of the present invention) structural representation that presents.
The structural representation that the preparation method step 3) that Fig. 4 is shown as MEMS structure of the present invention presents.
The structural representation that the preparation method step 4) that Fig. 5 is shown as MEMS structure of the present invention presents.
The structural representation that the preparation method step 5) that Fig. 6 is shown as MEMS structure of the present invention presents.
The structural representation that the preparation method step 6) that Fig. 7 is shown as MEMS structure of the present invention presents.
The structural representation that the preparation method step 7) that Fig. 8 is shown as MEMS structure of the present invention presents.
Element numbers explanation
101 first Semiconductor substrate
102 microstructured area
103 metal bonding layer
104 metal pads
105 first metal oxide layers
106 second Semiconductor substrate
107 annular protrusions
108 au-si alloy layers
109 semiconductor grains
110 oxidation particles
111 second metal oxide layers
S11 ~ S17 step 1) ~ step 7)
Detailed description of the invention
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this description can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by detailed description of the invention different in addition, and the every details in this description also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Refer to Fig. 1 ~ Fig. 8.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, then only the assembly relevant with the present invention is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
As shown in Fig. 1 ~ Fig. 8, the present embodiment provides a kind of preparation method of MEMS structure, comprises step:
As shown in Fig. 1 ~ Fig. 2, first step 1) S11 is carried out, first Semiconductor substrate 101 and the second Semiconductor substrate 106 is provided, described first Semiconductor substrate 101 surface is formed with microstructured area 102, is surrounded on the metal bonding layer 103 of described microstructured area 102 and is positioned at the metal pad 104 of described metal bonding layer 103 periphery, and described second Semiconductor substrate 106 surface has and can form with described metal bonding layer 103 annular protrusion 107 be sealed and matched; Wherein, described metal bonding layer 103 and metal pad 104 surface are formed with the first metal oxide layer 105.
In the present embodiment, the material of described first Semiconductor substrate 101 and the second Semiconductor substrate 106 is silicon.Certainly, the material of described first Semiconductor substrate 101 and the second Semiconductor substrate 106 can be determined according to demand, can also be as Ge substrate, GeSi substrate, SiC substrate or III-V race's substrate etc., be not limited thereto.
In the present embodiment, the material of described metal pad 104 and described metal bonding layer 103 is aluminium, and aluminium surface is formed with alumina layer.Certainly, the material of described metal pad 104 and described metal bonding layer 103 can also for having the metal of metal connecting line function and key function as copper etc.
Exemplarily, in described first Semiconductor substrate 101, be also formed with cmos device structure, and the electrode of described cmos device structure is drawn by described metal pad 104.In addition, described microstructured area 102 is formed as micro-structurals such as pressure sensor, acceleration transducer, light sensors.The shape of described metal bonding layer 103 is determined according to the shape of described microstructured area 102, can be generally circle, rectangle etc.
Exemplarily, described second Semiconductor substrate 106 surface has and can form with described metal bonding layer 103 annular protrusion 107 be sealed and matched, described annular protrusion 107 is surperficial for being formed at described second Semiconductor substrate 106 by photoetching process, for forming micro-structural cavity with described metal bonding layer 103 bonding.
As shown in Figures 1 and 3, then carry out step 2) S12, adopt pre-cleaning processes to remove first metal oxide layer 105 on described metal bonding layer 103 and metal pad 104 surface.
Exemplarily, described pre-cleaning processes is dilute hydrofluoric acid cleaning DHF technique.The alumina layer on aluminium bonded layer surface effectively can be removed by DHF technique, to strengthen the bond strength of follow-up first Semiconductor substrate 101 and the second Semiconductor substrate 106, but, non-selective due to DHF technique, meanwhile, the alumina layer on described aluminum pad surface also can be removed.
As shown in Fig. 1 and Fig. 4, then carry out step 3) S13, by the first Semiconductor substrate 101 and the second Semiconductor substrate 106 described in described metal bonding layer 103 and annular protrusion 107 bonding.
In the present embodiment, adopt gold silicon eutectic bonding technology to carry out bonding to described metal bonding layer 103 and annular protrusion 107, between described annular protrusion 107 and described metal bonding layer 103, namely form au-si alloy layer 108 carry out bonding both above-mentioned.Certainly, the bonding technology of other expection is equally applicable to the present embodiment, is not limited thereto.
As shown in Figures 1 and 5, then carry out step 4) S14, carry out cutting technique to described second Semiconductor substrate 106, to remove the semi-conducting material of described annular protrusion 107 periphery, during cutting, described metal pad 104 adsorption has semiconductor grain 109.
In the present embodiment, described cutting technique is mechanical cutting processes, a large amount of semiconductor grains 109 can be produced due to during cutting, remove the alumina layer on described aluminum pad surface in DHF technique after, characteristic and the electromotive force on aluminum pad surface can be changed, make its easily these semiconductor grains 109 of absorption, easily cause aluminum pad be corroded and affect performance, therefore, these semiconductor grains 109 are necessarily removed.
As shown in Figure 1 and Figure 6, then carry out step 5) S15, adopt oxidation technology that described semiconductor grain 109 is oxidized and form oxidation particle 110, and make described metal pad 104 surface oxidation form the second metal oxide layer 111.
Exemplarily, adopt boiler tube thermal oxidation technology that described semiconductor grain 109 is oxidized and form oxidation particle 110, and make described metal pad 104 surface oxidation form the second metal oxide layer 111.
As shown in Fig. 1 and Fig. 7, then carry out step 6) S16, adopt acidic chemical etching process to remove described oxidation particle 110.
Exemplarily, the semiconductor grain 109 after adopting dilute hydrofluoric acid cleaning DHF technique to remove oxidation, meanwhile, because described metal pad 104 surface has the second metal oxide layer 111, can avoid DHF technique to cause damage to metal pad 104 surface.
As shown in Fig. 1 and Fig. 8, then carry out step 7) S17, adopt alkali electroless etching process to remove described second metal oxide layer 111.
Employing alkali electroless corrodes, and can remove described second metal oxide layer 111, obtain functional metal pad 104 while the characteristic not affecting described metal pad 104, used for techniques such as follow-up lead-in wires.
As mentioned above, the invention provides a kind of preparation method of MEMS structure, comprise step: 1) provide the first Semiconductor substrate 101 and the second Semiconductor substrate 106, described first Semiconductor substrate 101 surface is formed with microstructured area 102, is surrounded on the metal bonding layer 103 of described microstructured area 102 and is positioned at the metal pad 104 of described metal bonding layer 103 periphery, and described second Semiconductor substrate 106 surface has and can form with described metal bonding layer 103 annular protrusion 107 be sealed and matched; 2) pre-cleaning processes is adopted to remove first metal oxide layer 105 on described metal bonding layer 103 and metal pad 104 surface; 3) by the first Semiconductor substrate 101 and the second Semiconductor substrate 106 described in described metal bonding layer 103 and annular protrusion 107 bonding; 4) carry out cutting technique to described second Semiconductor substrate 106, to remove the semi-conducting material of described annular protrusion 107 periphery, during cutting, described metal pad 104 adsorption has semiconductor grain 109; 5) adopt oxidation technology that described semiconductor grain 109 is oxidized and form oxidation particle 110, and make described metal pad 104 surface oxidation form the second metal oxide layer 111; 6) acidic chemical etching process is adopted to remove described oxidation particle 110; 7) alkali electroless etching process is adopted to remove described second metal oxide layer 111.The present invention eliminates the semiconductor grain 109 of metal pad 104 adsorption successively by oxidation technology, sour corrosion technique and alkaline corrosion technique, when not affecting MEMS performance and aluminum pad performance, can effectively avoid due to semiconductor grain 109 and cause the defect that metal pad 104 is corroded, present invention process is simple, is applicable to industrial production.So the present invention effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (9)
1. a preparation method for MEMS structure, is characterized in that, comprises step:
1) the first Semiconductor substrate and the second Semiconductor substrate are provided, described first semiconductor substrate surface is formed with microstructured area, is surrounded on the metal bonding layer of described microstructured area and is positioned at the metal pad of described metal bonding layer periphery, and described second semiconductor substrate surface has and can form with described metal bonding layer the annular protrusion be sealed and matched;
2) pre-cleaning processes is adopted to remove first metal oxide layer on described metal bonding layer and metal pad surface;
3) by the first Semiconductor substrate and the second Semiconductor substrate described in described metal bonding layer and annular protrusion bonding;
4) carry out cutting technique to described second Semiconductor substrate, to remove the semi-conducting material of described annular protrusion periphery, during cutting, described metal pad adsorption has semiconductor grain;
5) adopt oxidation technology that described semiconductor grain is oxidized and form oxidation particle, and make described metal pad surface oxidation form the second metal oxide layer;
6) acidic chemical etching process is adopted to remove described oxidation particle;
7) alkali electroless etching process is adopted to remove described second metal oxide layer.
2. the preparation method of MEMS structure according to claim 1, is characterized in that: the material of described first Semiconductor substrate and the second Semiconductor substrate is silicon.
3. the preparation method of MEMS structure according to claim 1, is characterized in that: the material of described metal pad and described metal bonding layer is aluminium.
4. the preparation method of MEMS structure according to claim 1, is characterized in that: step 2) described in pre-cleaning processes be dilute hydrofluoric acid cleaning DHF technique.
5. the preparation method of MEMS structure according to claim 1, is characterized in that: step 3) adopts gold silicon eutectic bonding technology to carry out bonding to described metal bonding layer and annular protrusion.
6. the preparation method of MEMS structure according to claim 1, is characterized in that: the cutting technique described in step 4) is mechanical cutting processes.
7. the preparation method of MEMS structure according to claim 1, is characterized in that: the oxidation technology described in step 5) is boiler tube thermal oxidation technology.
8. the preparation method of MEMS structure according to claim 1, is characterized in that: the semiconductor grain after step 6) adopts dilute hydrofluoric acid cleaning DHF technique to remove oxidation.
9. the preparation method of MEMS structure according to claim 1, is characterized in that: be also formed with cmos device structure in described first Semiconductor substrate.
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| CN102336390A (en) * | 2010-07-26 | 2012-02-01 | 矽品精密工业股份有限公司 | Micro-electro-mechanical structure with pressure sensor and manufacturing method thereof |
| CN102556945A (en) * | 2010-12-13 | 2012-07-11 | 台湾积体电路制造股份有限公司 | Method to prevent metal pad damage in wafer level package |
| CN103420325A (en) * | 2012-04-24 | 2013-12-04 | 罗伯特·博世有限公司 | Method for manufacturing a hybrid integrated component |
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- 2014-03-26 CN CN201410114998.8A patent/CN104944362B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1428823A (en) * | 2001-12-26 | 2003-07-09 | 旺宏电子股份有限公司 | Method for removing residual polymer from etched weld-padded window |
| CN1815704A (en) * | 2005-02-01 | 2006-08-09 | 探微科技股份有限公司 | Wafer-grade packing method |
| US20060228831A1 (en) * | 2005-03-29 | 2006-10-12 | Nasiri Steven S | Method and system of releasing a MEMS structure |
| CN102336390A (en) * | 2010-07-26 | 2012-02-01 | 矽品精密工业股份有限公司 | Micro-electro-mechanical structure with pressure sensor and manufacturing method thereof |
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