CN104934305A - High-voltage thyristor and designing process thereof - Google Patents

High-voltage thyristor and designing process thereof Download PDF

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CN104934305A
CN104934305A CN 201410100472 CN201410100472A CN104934305A CN 104934305 A CN104934305 A CN 104934305A CN 201410100472 CN201410100472 CN 201410100472 CN 201410100472 A CN201410100472 A CN 201410100472A CN 104934305 A CN104934305 A CN 104934305A
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source
diffusion
latex
high
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CN 201410100472
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CN104934305B (en )
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陶崇勃
刘朋
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西安永电电气有限责任公司
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer

Abstract

The invention discloses a high-voltage thyristor and a designing process thereof, wherein the designing process comprises the following steps: S1, supplying a to-be-diffused aluminum source with a concentration of 6*10<15>cm<-3> to 9*10<15>cm<-3>, adding the aluminum source into SiO2 latex, in 80-90 hours, making the aluminum source perform first diffusion on an N-type substrate in a SiO2 latex diffusion manner; and S2, based on the first diffusion, supplying a to-be-diffused boron source with a concentration of 2.5*10<18>cm<-3> to 3*10<18>cm<-3>, adding the boron source into the SiO2 latex, in 8-10 hours, making the boron source perform second diffusion on a P-type layer which is formed in the first diffusion in a SiO2 latex diffusion manner. The thyristor which is manufactured through the designing process has advantages of high blocking voltage and high reliability. Furthermore the size of a device for serially connecting a plurality of thyristors is effectively reduced.

Description

高压晶闸管及设计工艺方法 And design process for high voltage thyristor

技术领域 FIELD

[0001] 本发明涉及半导体技术领域,特别是涉及一种高压晶闸管及设计工艺方法。 [0001] The present invention relates to semiconductor technology, and more particularly to a process for the design and the high voltage thyristor.

背景技术 Background technique

[0002] 晶闸管是在晶体管基础上发展起来的一种大功率半导体器件。 [0002] The power semiconductor device is a thyristor developed on the basis of the transistor. 它的出现使半导体器件由弱电领域扩展到强电领域。 It appears that the weak areas of the semiconductor device from the extended to the strong electric field. 晶闸管也像半导体二极管那样具有单向导电性,但它的导通时间是可控的,主要用于整流、逆变、调压及开关等方面。 As also thyristor as a semiconductor diode having one-way conductivity, but it is controllable conduction time, mainly used for the rectifier, inverter, and regulating switch. 晶闸管的优点包括:体积小、重量轻、效率高、动作迅速、维修简单、操作方便、寿命长、容量大。 Thyristor advantages include: small size, light weight, high efficiency, quick operation, simple maintenance, convenient operation, long life, high capacity.

[0003] 在目前高电压应用环境中,因为单只晶闸管耐压不够必须采用晶闸管串联技术,即将多只晶闸管串联起来。 [0003] In the current environment of high-voltage applications, because the pressure is not enough to be a single thyristor series thyristor technology, is about more than just the thyristor series. 多只晶闸管相互串联时,要求各器件承受电压相等,但实际上因器件特性之间的差异,一般都会存在电压分配不均匀、开通关断不同步等问题。 Multi thyristor connected in series with each other, each device requires the withstand voltage equal to, but in fact, due to the difference between device characteristics, usually uneven distribution voltage is present, do not turn off synchronization problems. 因此,如要求串联器件开通、触发特性一致性好,则同时需要增加均压措施,如此会导致装置体积增大,电路复杂,发生损坏的几率增加。 Thus, as in claim tandem devices turn, trigger characteristic consistency, while the need to increase the pressure equalization steps, thus increasing the volume of the device will result, circuit complexity, increase the probability of occurrence of damage.

发明内容 SUMMARY

[0004] 有鉴于此,本发明提供了一种高压晶闸管及设计工艺方法。 [0004] Accordingly, the present invention provides a process for the design and the high voltage thyristor.

[0005] 为了实现上述目的之一,本发明的一种高压晶闸管的设计工艺方法,其包括如下步骤: [0005] In order to achieve one of the above-described object, a high-pressure process for the design of the thyristor according to the present invention, comprising the steps of:

[0006] S1.提供待扩散的浓度为6X 115CnT3〜9X 115CnT3的铝源,将所述铝源加入到S12乳胶中,在80〜90h内,通过S12乳胶源扩散的方式,使铝源在N型衬底上进行第一次扩散,第一次扩散过程中,控制结深为150〜160 μ m,表面浓度为80〜10mV ; [0006] S1. Provided to be diffused at a concentration of 6X 115CnT3~9X 115CnT3 aluminum source, an aluminum source is added to the latex to S12, in 80~90h, latex S12 through diffusion source, the aluminum source N for the first diffusion-type substrate, the first diffusion process, the control junction depth 150~160 μ m, the surface concentration of 80~10mV;

[0007] S2.在第一次扩散基础上,提供待扩散的浓度为2.5 X 118CnT3〜3 X 118CnT3的硼源,将所述硼源加入到S12乳胶中,在8〜1h内,通过S12乳胶源扩散的方式,使硼源在第一次扩散形成的P型层上进行第二次扩散,第二次扩散过程中,控制结深为28〜32 μ m,表面浓度为8〜10mV。 [0007] S2. In the first diffusion based on the concentration to be provided for the diffusion of the boron source is 2.5 X 118CnT3~3 X 118CnT3, said boron source is added to the latex to S12, in 8~1h, latex through S12 source diffusion mode, a second source boron diffusion on a P type diffusion layer formed in the first, the second diffusion process, the control junction depth 28~32 μ m, the surface concentration of 8~10mV.

[0008] 作为本发明的进一步改进,所述铝源为高纯硝酸铝。 [0008] As a further improvement of the present invention, the high purity aluminum source is aluminum nitrate.

[0009] 作为本发明的进一步改进,所述高纯硝酸铝的质量为3g,将其加入到10ml的S12乳胶中,形成混合溶液。 [0009] As a further improvement of the present invention, the quality of high purity aluminum nitrate 3g, S12 and added to 10ml of the latex to form a mixed solution.

[0010] 作为本发明的进一步改进,所述硼源为高纯三氧化二硼。 [0010] As a further improvement of the present invention, the high-purity boron source is boron trioxide.

[0011] 作为本发明的进一步改进,所述高纯三氧化二硼的质量为450mg,将其加入到10ml的S12乳胶中,形成混合溶液。 [0011] As a further improvement of the present invention, the high-purity boron trioxide mass of 450mg, which was added to the latex 10ml S12, the mixed solution is formed.

[0012] 为实现上述另一发明目的,本发明的一种高压晶闸管,其根据所述权利要求1〜5任一项所述的设计工艺方法进行制造。 [0012] To achieve the above another object of the invention, a high voltage thyristor according to the present invention, which is designed according to the process claimed in any one of claims 1 ~ 5 The method of any manufactured.

[0013] 与现有技术相比,本发明的有益效果是:由本发明的设计工艺方法制造的晶闸管阻断电压高,可靠性高,有效地减小了将若干个晶闸管相串联的装置的体积。 [0013] Compared with the prior art, the beneficial effects of the present invention is that: the thyristor produced by the design process of the present invention, a high blocking voltage and high reliability, effectively reducing the volume of the plurality of thyristor means connected in series .

附图说明 BRIEF DESCRIPTION

[0014] 为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明中记载的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。 [0014] In order to more clearly illustrate the technical solutions in the embodiments or the prior art embodiment of the present invention, briefly introduced hereinafter, embodiments are described below in the accompanying drawings or described in the prior art needed to be used in describing the embodiments the drawings are only some embodiments of the present invention described, those of ordinary skill in the art is concerned, without creative efforts, can derive from these drawings other drawings.

[0015] 图1为本发明的高压晶闸管的设计工艺方法的一具体实施方式的方法流程示意图; [0015] FIG. 1 process flow of a particular embodiment of the process for designing a high-pressure embodiment of the present invention. FIG thyristor;

[0016] 图2为本发明的高压晶闸管的纵向杂质浓度分布图,其中,Jl代表PN结,P段曲线代表第一次扩散杂质浓度分布,P+段曲线代表第二次扩散杂质浓度分布,NI段曲线代表衬底杂质浓度,Ns代表表面浓度; [0016] FIG longitudinal impurity concentration distribution high voltage thyristor of the present invention. FIG. 2, wherein, Jl behalf of the PN junction, P curve representing the first paragraph diffusion impurity concentration distribution, P + diffusion of the curve representative of the second impurity concentration distribution, the NI of the curve representative of the impurity concentration of the substrate, the surface concentration Ns representatives;

[0017] 图3为高压晶闸管的管芯阻断特性测试曲线。 Die [0017] FIG. 3 is a high voltage thyristor blocking characteristic test curve.

具体实施方式 detailed description

[0018] 为了使本技术领域的人员更好地理解本发明中的技术方案,下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。 [0018] In order to make those skilled in the art better understand the technical solutions of the present invention, the present invention in conjunction with the following drawings in the embodiments, the technical solutions in the embodiments of the present invention will be clearly and completely described in, obviously, the described embodiments are merely part of embodiments of the present invention rather than all embodiments. 基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都应当属于本发明保护的范围。 Based on the embodiments of the present invention, all other embodiments of ordinary skill in the art without creative efforts shall be made available, should fall within the scope of the present invention.

[0019] 如图1所示,本发明的一种高压晶闸管的设计工艺方法,其包括如下步骤: [0019] As shown in FIG. 1, a high-pressure process for designing the thyristor according to the present invention, comprising the steps of:

[0020] S1.提供待扩散的浓度为6X 115CnT3〜9X 115CnT3的铝源,将所述铝源加入到S12乳胶中,在80〜90h内,通过S12乳胶源扩散的方式,使铝源在N型衬底上进行第一次扩散,获得PN结。 [0020] S1. Provided to be diffused at a concentration of 6X 115CnT3~9X 115CnT3 aluminum source, an aluminum source is added to the latex to S12, in 80~90h, latex S12 through diffusion source, the aluminum source N performing a first diffusion-type substrate, a PN junction is obtained. 其中,第一次扩散过程中,控制结深为150〜160 μ m,表面浓度为80〜10mV。 Wherein the first diffusion process, the control junction depth 150~160 μ m, the surface concentration of 80~10mV.

[0021] 通过第一次扩散,形成的耐压PN结附近扩散杂质的分散较缓,从而能够减小相应的高压晶闸管中Jl结和J2结的浓度梯度,使空间电荷区展宽增加,从而降低了空间电荷区的电场强度,有利于晶闸管阻断电压的提高。 [0021] The first time through diffusion, diffusion of impurities dispersed near the PN junction formed by moderate pressure, the concentration gradient can be reduced in a corresponding voltage thyristor junction Jl and J2 junction of the widening space charge region increases, thereby reducing electric field intensity of the space charge region, help improve the blocking voltage of the thyristor.

[0022] 具体地,其中所述铝源为高纯硝酸铝。 [0022] In particular, wherein the high purity aluminum source is aluminum nitrate. 作为一种实施方式,第一次扩散过程中,所述高纯硝酸铝的质量为3g,将其加入到10ml的S12乳胶中,形成混合溶液。 As an embodiment, the first diffusion process, the quality of high purity aluminum nitrate 3g, S12 and added to 10ml of the latex to form a mixed solution.

[0023] S2.在第一次扩散基础上,提供待扩散的浓度为2.5 X 118CnT3〜3 X 118CnT3的硼源,将所述硼源加入到S12乳胶中,在8〜1h内,通过S12乳胶源扩散的方式,使硼源在第一次扩散形成的P型层上进行第二次扩散,第二次扩散过程中,控制结深为28〜32 μ m,表面浓度为8〜10mV。 [0023] S2. In the first diffusion based on the concentration to be provided for the diffusion of the boron source is 2.5 X 118CnT3~3 X 118CnT3, said boron source is added to the latex to S12, in 8~1h, latex through S12 source diffusion mode, a second source boron diffusion on a P type diffusion layer formed in the first, the second diffusion process, the control junction depth 28~32 μ m, the surface concentration of 8~10mV.

[0024] 如图2所示,第二次扩散的目次在于,为了减小短基区的横向电阻,改善晶闸管的动态特性。 [0024] As shown in FIG 2, the second diffusion directory that in order to reduce the lateral resistance of the base region is short, to improve the dynamic characteristics of the thyristor. 通过第二次扩散可在P型区形成明显的浓度梯度。 It may be formed in significant concentration gradient of the second P-type region by diffusion. 因此,通过本发明的设计工艺方法制造的高压晶闸管的扩散杂质分布是阶梯型分布,这种阶梯型分布是经过优化的结构,更加适用于高压晶闸管的制造。 Thus, the diffusion impurity profile produced by a high-voltage thyristor design process of the present invention is a step-type distribution, this distribution is optimized ladder-type configuration, more suitable for manufacturing a high voltage thyristor.

[0025] 具体地,其中所述硼源为高纯三氧化二硼。 [0025] In particular, high-purity wherein said boron source is boron trioxide. 作为一种实施方式,第二次扩散过程中,所述高纯三氧化二硼的质量为450mg,将其加入到10ml的S12乳胶中,形成混合溶液。 As an embodiment, the second diffusion process, the quality of high-purity boron trioxide is 450mg, S12 and added to 10ml of the latex to form a mixed solution.

[0026] 本发明还提供一种根据如上所述的设计工艺方法制造的高压晶闸管。 [0026] The present invention further provides a method of manufacturing a thyristor according to a high-pressure process for the design described above.

[0027] 下面针对由本发明的设计工艺方法制造的高压晶闸管进行测试实验,测试实验的过程及结果如下: Process [0027] The following test experiment, test experiments designed for high voltage thyristor produced by the process of the present invention and the results were as follows:

[0028] 通过对本发明的高压晶闸管的测试,其在25 °C条件下,其正、反向阻断电压>8.6kV,漏电流〈1mA。 [0028] By testing the high-voltage thyristor according to the present invention, which is 25 ° C, at which the forward and reverse blocking voltage> 8.6kV, leakage current <1mA.

[0029] 如图3所示,为本发明的高压晶闸管的管芯阻断特性测试曲线,图中测试电路取样衰减幅度为1000:1,实测的断态不重复峰值电压为图中横坐标显示值的(1000X 31/2)倍,漏电流为图中纵坐标显示值除以100Ω的取样电阻。 [0029] As shown in FIG. 3, the die of the present invention, high voltage thyristor blocking characteristic curve test, the test circuit is sampled in FIG attenuation level 1000: 1, found no repetitive peak off-state voltage of FIG abscissa shows (1000X 31/2) times the value of the leakage current in FIG vertical display coordinate divided by the sampling resistor 100Ω.

[0030] 如此说明杂质浓度掺杂分布设计合理,工艺方案可行,实现了预期的耐压设计要求。 [0030] As the doping impurity concentration profile described rational design process is feasible, to achieve the desired breakdown voltage design requirements. 同时,本发明的高压晶闸管具有承受较高电压的特性。 Meanwhile, the present invention has a high voltage thyristor characteristics to withstand the higher voltage.

[0031] 对于本领域技术人员而言,显然本发明不限于上述示范性实施例的细节,而且在不背离本发明的精神或基本特征的情况下,能够以其他的具体形式实现本发明。 In the case [0031] to those skilled in the art, that the invention is not limited to the details of the above-described exemplary embodiment, but without departing from the spirit or essential characteristics of the present invention, the present invention can be realized in other specific forms. 因此,无论从哪一点来看,均应将实施例看作是示范性的,而且是非限制性的,本发明的范围由所附权利要求而不是上述说明限定,因此旨在将落在权利要求的等同要件的含义和范围内的所有变化囊括在本发明内。 Therefore, no matter from what point of view, the embodiments should be considered exemplary, and not limiting, the scope of the invention being indicated by the appended claims rather than by the foregoing description, the appended claims are therefore intended to All changes which come within the meaning and range of equivalents thereof are within the present invention include. 不应将权利要求中的任何附图标记视为限制所涉及的权利要求。 In the claims should not be considered as any reference numerals as claimed in claim limitations involved.

[0032] 此外,应当理解,虽然本说明书按照实施方式加以描述,但并非每个实施方式仅包含一个独立的技术方案,说明书的这种叙述方式仅仅是为清楚起见,本领域技术人员应当将说明书作为一个整体,各实施例中的技术方案也可以经适当合,形成本领域技术人员可以理解的其他实施方式。 [0032] Further, it should be understood that while the present specification be described in terms of embodiments, but not every embodiment contains only a separate aspect, this narrative description only for the sake of clarity, those skilled in the specification should as a whole, the technical solutions in the respective embodiments may be suitably combined to form other embodiments of the present art can be appreciated in the art.

Claims (6)

  1. 1.一种高压晶闸管的设计工艺方法,其特征在于,所述高压晶闸管的设计工艺方法包括如下步骤: 51.提供待扩散的浓度为6X 115CnT3〜9X 115CnT3的铝源,将所述铝源加入到S12乳胶中,在80〜90h内,通过S12乳胶源扩散的方式,使铝源在N型衬底上进行第一次扩散,第一次扩散过程中,控制结深为150〜160 μ m,表面浓度为80〜10mV ; 52.在第一次扩散基础上,提供待扩散的浓度为2.5 X 118Cm-3〜3 X 1018cm_3的硼源,将所述硼源加入到S12乳胶中,在8〜1h内,通过S12乳胶源扩散的方式,使硼源在第一次扩散形成的P型层上进行第二次扩散,第二次扩散过程中,控制结深为28〜32 μ m,表面浓度为8〜1mV0 1. A process for the design of high voltage thyristor, characterized in that the process for the design of high voltage thyristor comprising the steps of: providing to be 51. The diffusion concentration 6X 115CnT3~9X 115CnT3 the aluminum source, the aluminum source is added latex to S12, in 80~90h, latex S12 through diffusion source, the aluminum source is first spread over the N-type substrate, the first diffusion process, the control junction depth 150~160 μ m the surface concentration of 80~10mV; 52. on the basis of the first diffusion, diffusion to be provided at a concentration of 2.5 X 118Cm-3~3 X 1018cm_3 of boron source, the boron source is added to the latex S12, the 8 the ~1h, latex S12 through diffusion source, a second source boron diffusion on a P type diffusion layer formed in the first, the second diffusion process, the control junction depth 28~32 μ m, the surface concentration of 8~1mV0
  2. 2.根据权利要求1所述的高压晶闸管的设计工艺方法,其特征在于,所述铝源为高纯硝酸铝。 The design process for high voltage thyristor according to claim 1, wherein the high purity aluminum source is aluminum nitrate.
  3. 3.根据权利要2所述的高压晶闸管的设计工艺方法,其特征在于,所述高纯硝酸铝的质量为3g,将其加入到10ml的S12乳胶中,形成混合溶液。 3. The method of the design process for a high-voltage thyristor 2, characterized in that the mass of the high purity aluminum nitrate 3g, to which was added 10ml S12 of latex, to form a mixed solution.
  4. 4.根据权利要求1所述的高压晶闸管的设计工艺方法,其特征在于,所述硼源为高纯二氧化二硼。 The design process for high voltage thyristor according to claim 1, wherein said boron source is high-purity boron oxide.
  5. 5.根据权利要求4所述的高压晶闸管的设计工艺方法,其特征在于,所述高纯三氧化二硼的质量为450mg,将其加入到10ml的S12乳胶中,形成混合溶液。 The design process for the high voltage thyristor 4 claim, wherein said high-purity boron trioxide mass of 450mg, which was added to 10ml S12 of latex, to form a mixed solution.
  6. 6.一种高压晶闸管,其特征在于,所述高压晶闸管根据所述权利要求1〜5任一项所述的设计工艺方法进行制造。 A high voltage thyristor, characterized in that said high voltage thyristor according to the design process in accordance with the method according to any of claims 1 ~ 5 manufactured.
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