CN104925742A - Forming method of MEMS semiconductor device - Google Patents

Forming method of MEMS semiconductor device Download PDF

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Publication number
CN104925742A
CN104925742A CN201410105998.1A CN201410105998A CN104925742A CN 104925742 A CN104925742 A CN 104925742A CN 201410105998 A CN201410105998 A CN 201410105998A CN 104925742 A CN104925742 A CN 104925742A
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CN
China
Prior art keywords
described
semiconductor substrate
welding pad
aluminium welding
semiconductor
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CN201410105998.1A
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Chinese (zh)
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CN104925742B (en
Inventor
郑超
王伟
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中芯国际集成电路制造(上海)有限公司
中芯国际集成电路制造(北京)有限公司
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Abstract

The invention provides a forming method of an MEMS semiconductor device. The forming method comprises the following steps: placing a first aluminum bonding pad and a second aluminium bonding pad on a first semiconductor substrate; providing a second semiconductor substrate, forming a connection structure on the second semiconductor substrate, wherein the connection structure is corresponding to the first aluminum bonding pad one by one; connecting the first aluminum bonding pad and the connection structure so as to bonding the second semiconductor substrate and the first semiconductor substrate; cutting off part of the second semiconductor substrate, wherein the cut position of the second semiconductor substrate is corresponding to the second aluminum bonding pad; washing the second aluminum bonding pad by deionized water; etching the cut part of the second semiconductor substrate by a dry process etching method so as to break the second semiconductor from the cut position to expose the second aluminum bonding pad; and washing the first semiconductor substrate and the second semiconductor. The provided technical scheme avoids the phenomenon that the particles are adhered on the surface of the second aluminum bonding pad.

Description

The formation method of MEMS semiconductor devices

Technical field

The present invention relates to a kind of semiconductor technology, particularly relate to a kind of formation method of MEMS semiconductor devices.

Background technology

In the manufacture craft of MEMS semiconductor devices, usually relate to Semiconductor substrate two panels being formed with semiconductor device structure and be bonded to together to form the IC chip of 3D structure, specifically comprise:

Shown in figure 1, first Semiconductor substrate 100 is provided, wherein said first Semiconductor substrate 100 comprises: the first aluminium welding pad 110 and the second aluminium welding pad 120, the surface of described first Semiconductor substrate 100, the first aluminium welding pad 110 and the second aluminium welding pad 120 are also formed with insulating barrier 300.Wherein, device layer (not shown) is formed in described first Semiconductor substrate 100, part-structure that can have CMOS, inductance, electric capacity or semiconductor transducer etc. in described device layer, the electrode of the device that described first aluminium welding pad 110 is corresponding to described device layer with the second aluminium welding pad 120 is conducted.Preset described first aluminium welding pad 110 to be suitable for and second half conductive substrate bonding, time described second aluminium welding pad 120 is suitable for doing wire bonding or On-Wafer Measurement, contact with test probe.The concrete condition of described second aluminium welding pad 120 is with reference to details enlarged drawing in figure 1.

Next, shown in figure 2, selective etch is carried out to the insulating barrier 300 on described first Semiconductor substrate 100 surface, to expose the region of the first aluminium welding pad 110 and the second aluminium welding pad 120 place, be suitable for carrying out bonding.General, described insulating barrier 300 is removed and all needs to carry out over etching, to guarantee that the insulating barrier 300 on described first aluminium welding pad 110 and the second aluminium welding pad 120 is all removed totally, and after described insulating barrier 300 is removed, also comprise the process utilizing HF deionized water solution to remove the natural oxidizing layer on the first aluminium welding pad 110 and the second aluminium welding pad 120.

Next, shown in figure 3, provide the second Semiconductor substrate 200, described second Semiconductor substrate 200 comprises some syndetons 210, described syndeton 210 and described first aluminium welding pad 110 one_to_one corresponding.Described second Semiconductor substrate 200 also comprises flat part 220.General, described syndeton 210 is formed by the surface of etching second Semiconductor substrate 200, and described flat part 220 is the main part of described second Semiconductor substrate 200.

Next, shown in figure 4, adopt cutter 70 to cut the region described second Semiconductor substrate 200 not having described syndeton 210, and the described second cut place of Semiconductor substrate 200 is corresponding with described second aluminium welding pad 220.Concrete, in the diagram, described cut place is as shown in dotted line 1,2.

Next, shown in figure 5, adopt deionized water to rinse, the cut down second Semiconductor substrate 200 to be removed, then, described second aluminium welding pad 220 has come out.But some particle 60(Silicon dust produced when cutting the second Semiconductor substrate 220 of the surface attachment of described second aluminium welding pad 220).

These particles 60, in the process of deionized water rinsing, are also difficult to get rid of, and these particles 60 can affect the contact of the second aluminium welding pad 220, subsequent device can be caused to connect loosely, easily cause shorted devices or other ill effect.

In conventional manner, general by increasing in deionized water impact process, the impulsive force of deionized water makes particle 60 be removed.And this can destroy the component graphics in the first Semiconductor substrate 100 and the second Semiconductor substrate 200.The impulse force of deionized water is less, does not have the situation of the component graphics in destruction first Semiconductor substrate 100 and the second Semiconductor substrate 200 as shown in Figure 6; The impulse force of deionized water is comparatively large, does not have the situation of the component graphics in destruction first Semiconductor substrate 100 and the second Semiconductor substrate 200 as shown in Figure 7.

Need to develop new technology, to solve the problem that particle 60 is attached to the surface of the second aluminium welding pad 220.

Summary of the invention

The shortcoming of prior art in view of the above; the object of the present invention is to provide a kind of formation method of MEMS semiconductor devices, for solving in prior art when cutting the second Semiconductor substrate, producing particle; described particle can be attached to the surface of the second aluminium welding pad, is difficult to the problem removed.

For achieving the above object and other relevant objects, the invention provides a kind of formation method of MEMS semiconductor devices, the formation method of described MEMS semiconductor devices at least comprises:

First Semiconductor substrate is provided, described first Semiconductor substrate is formed the first aluminium welding pad and the second aluminium welding pad;

Second Semiconductor substrate is provided, described second Semiconductor substrate is formed with syndeton, described syndeton and described first aluminium welding pad one_to_one corresponding;

Described first aluminium welding pad is connected with syndeton, to make described second Semiconductor substrate and described first Semiconductor substrate bonding;

Cut the segment thickness of described second Semiconductor substrate, the cut place of described second Semiconductor substrate is corresponding with described second aluminium welding pad;

Deionized water is utilized to clean described second aluminium welding pad;

Utilize dry etching to etch the cut place of described second Semiconductor substrate, described second semiconductor is ruptured from cut, exposes described second aluminium welding pad;

Described first Semiconductor substrate and the second semiconductor are cleaned.

Alternatively, described first semiconductor substrate surface is formed with insulating barrier, before described second Semiconductor substrate is bonded in described first Semiconductor substrate, also comprises and etching the first Semiconductor substrate, to expose the step of described first aluminium welding pad.

Alternatively, after with the step exposing described first aluminium welding pad, before the step be connected with syndeton by described first aluminium welding pad, also comprise the step utilizing HF deionized water solution to remove the natural oxide film on described first aluminium welding pad and the second aluminium welding pad.

Alternatively, after removing the oxide-film on described second aluminium welding pad, also comprise the step of described second aluminium welding pad and metal wire being carried out bonding or being connected with test probe by described second aluminium welding pad.

Alternatively, described second aluminium welding pad comprise around described second aluminium welding pad periphery adhering and sealing ring and be positioned at the test contact area at described second aluminium welding pad center, described test contact area is lower than described adhering and sealing ring.

Alternatively, the protuberance that described second Semiconductor substrate comprises flat part and is connected with described flat part, described syndeton is described protuberance.

Alternatively, in the step of the segment thickness of described second Semiconductor substrate of described cutting, the thickness retaining the second Semiconductor substrate is 20 μm ~ 30 μm.

Alternatively, rotary washer platform is adopted to carry out the step of cleaning described first Semiconductor substrate and the second Semiconductor substrate.

Alternatively, rotary washer platform is adopted to carry out also comprising the step of described first Semiconductor substrate and the cleaning of the second semiconductor: to detect the step whether described cleaning completes.

Alternatively, device layer is formed with in described first Semiconductor substrate.

As mentioned above, the formation method of the MEMS semiconductor devices that technical scheme of the present invention provides, has following beneficial effect:

By when cutting the second Semiconductor substrate, second Semiconductor substrate of reserve part thickness, then first clean, recycling dry etching makes the second Semiconductor substrate rupture from cut, finally wash the part that the second Semiconductor substrate ruptures, thus when ensureing cutting the second Semiconductor substrate the particle that produces can not or few dropping on the second aluminium welding pad, avoid the problem of the particle be difficult on removal second aluminium welding pad.

Accompanying drawing explanation

Fig. 1 to Fig. 7 is shown as the schematic diagram of the formation method of MEMS semiconductor devices of the prior art.

Fig. 8 to Figure 11 is shown as the schematic diagram of the formation method of the MEMS semiconductor devices in the present invention.

Element numbers explanation

100 first Semiconductor substrate

200 second Semiconductor substrate

110 first aluminium welding pads

120 second aluminium welding pads

300 insulating barriers

210 syndetons

220 flat parts

70 cutter

60 particles

D thickness

S10 ~ S70 step

Detailed description of the invention

Inventor is by repeatedly studying discovery, etching the first Semiconductor substrate to expose the first aluminium welding pad 110 and the second aluminium welding pad 120, over etching is carried out to described first aluminium welding pad 110 and the second aluminium welding pad 120, and adopt HF deionized water solution to clean the first aluminium welding pad 110 and the second aluminium welding pad 120 to remove in the process of the first aluminium welding pad 110 and the surperficial natural oxidizing layer of the second aluminium welding pad 120, the surface of the first aluminium welding pad 110 and the second aluminium welding pad 120 can be subject to etching agent, the impact of HF deionized water solution, its surface state is changed, thus the particle 60 that the easy absorption of the second aluminium welding pad 120 produces during cutting the second Semiconductor substrate 200.

Thus, the invention provides a kind of formation method of new MEMS semiconductor devices, avoid the generation of the problems referred to above.

Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this description can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by detailed description of the invention different in addition, and the every details in this description also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.

Refer to Fig. 8 to Figure 10.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, then only the assembly relevant with the present invention is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.

First, composition graphs 8, performs step S10: provide the first Semiconductor substrate, described first Semiconductor substrate is formed the first aluminium welding pad and the second aluminium welding pad;

In the present embodiment, can carry out this step by the semiconductor structure in conventional art similar to Figure 1, concrete, described first Semiconductor substrate 100 comprises: the first aluminium welding pad 110 and the second aluminium welding pad 120, the surface of described first Semiconductor substrate 100, the first aluminium welding pad 110 and the second aluminium welding pad 120 are also formed with insulating barrier 300.

Wherein, in the present embodiment, described first Semiconductor substrate 100 is silicon substrate, is wherein formed with device layer (not shown), can has part-structure of CMOS, inductance, electric capacity or semiconductor transducer etc. in described device layer.

The electrode of the device that described first aluminium welding pad 110 is corresponding to described device layer with the second aluminium welding pad 120 is conducted.Preset described first aluminium welding pad 110 to be suitable for and other Semiconductor substrate bonding, time described second aluminium welding pad 120 is suitable for doing wire bonding or On-Wafer Measurement, contact with test probe.The concrete condition of described second aluminium welding pad 120 is with reference to details enlarged drawing in figure 1.

Continue with reference to shown in figure 2, selective etch is carried out to the insulating barrier 300 on described first Semiconductor substrate 100 surface, to expose the region of the first aluminium welding pad 110 and the second aluminium welding pad 120 place, is suitable for carrying out bonding.General, described insulating barrier 300 is removed and all needs to carry out over etching, to guarantee that the insulating barrier 300 on described first aluminium welding pad 110 and the second aluminium welding pad 120 is all removed totally, and after described insulating barrier 300 is removed, also comprise the process utilizing HF deionized water solution to remove the natural oxidizing layer on the first aluminium welding pad 110 and the second aluminium welding pad 120.

Next, composition graphs 8, continues with reference to shown in figure 3, performs step S20: provide the second Semiconductor substrate, described second Semiconductor substrate is formed with syndeton, described syndeton and described first aluminium welding pad one_to_one corresponding;

Second Semiconductor substrate 200 is provided, described second Semiconductor substrate 200 comprises some syndetons 210, described syndeton 210 and described first aluminium welding pad 110 one_to_one corresponding.Described second Semiconductor substrate 200 also comprises flat part 220.General, described syndeton 210 is formed by the surface of etching second Semiconductor substrate 200, and described flat part 220 is the main part of described second Semiconductor substrate 200.

Next, continue composition graphs 8, with reference to shown in Figure 10, perform step S30: be connected with syndeton by described first aluminium welding pad, to make described second Semiconductor substrate and described first Semiconductor substrate bonding;

Second Semiconductor substrate 200 is bonded together by the first aluminium welding pad 110 and syndeton 210 with described first Semiconductor substrate 100, second Semiconductor substrate 200 is combined with the device architecture in described first Semiconductor substrate 100, forms the MEMS semiconductor device structure of 3D.

Next, continue composition graphs 8, shown in figure 9, perform step S40: the segment thickness cutting described second Semiconductor substrate, the cut place of described second Semiconductor substrate is corresponding with described second aluminium welding pad;

Shown in figure 9, cutter 70 are adopted to cut described second Semiconductor substrate 200, cut place is the region described second Semiconductor substrate 200 not having described syndeton 210, and the described second cut place of Semiconductor substrate 200 is corresponding with described second aluminium welding pad 120, as shown in dotted line in Figure 10 1,2.

In this step, the described cutting to the second Semiconductor substrate 200 is not cut off the second Semiconductor substrate, and the thickness d retaining the second cut place of Semiconductor substrate 200 is 20 μm ~ 30 μm.

In this step, because the second Semiconductor substrate 200 is not cut off, less the falling on the second aluminium welding pad 120 of particle 60 produced when cutting the second Semiconductor substrate 200.

Next, continue composition graphs 8, continue with reference to shown in figure 9, perform step S50: utilize deionized water to clean described second aluminium welding pad;

In this step, the particle 60 produced when utilizing washed with de-ionized water to eliminate cutting the second Semiconductor substrate 200, prevents these particles 60 in subsequent technique, is adsorbed by the second aluminium welding pad 120.And due to the particle 60 on the second aluminium welding pad 120 fewer, also easily fallen by washed with de-ionized water, do not need the impulsive force of deliberately larger deionized water, prevent component graphics to be rushed paste by deionized water and fall.

Next, continue composition graphs 8, with reference to shown in Figure 10, perform step S60: utilize dry etching to etch the cut place of described second Semiconductor substrate, described second semiconductor is ruptured from cut;

Because described second Semiconductor substrate 200 place of being cut only remains the thickness d of 20 μm ~ 30 μm, and the other parts of the second Semiconductor substrate 200 are still very thick, thus make the second semiconductor 200 can rupture from cut in this step, expose described second aluminium welding pad 120.

Next, continue composition graphs 8, with reference to shown in Figure 11, perform step S70: described first Semiconductor substrate and the second semiconductor are cleaned.

In the present embodiment, rotary washer platform is adopted to carry out described first Semiconductor substrate and the cleaning of the second Semiconductor substrate, to get rid of second Semiconductor substrate of getting off.In addition, also comprise in this step and utilize YEScan to detect described cleaning step thoroughly.If cleaning is not thoroughly, then continue cleaning.

In sum, the present invention is by when cutting the second Semiconductor substrate, second Semiconductor substrate of reserve part thickness, then first clean, recycling dry etching makes the second Semiconductor substrate rupture from cut, finally wash the part that the second Semiconductor substrate ruptures, thus when ensureing cutting the second Semiconductor substrate the particle that produces can not or few dropping on the second aluminium welding pad, avoid the problem of the particle be difficult on removal second aluminium welding pad.So the present invention effectively overcomes various shortcoming of the prior art and tool high industrial utilization.

Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.

Claims (10)

1. a formation method for MEMS semiconductor devices, is characterized in that, the formation method of described MEMS semiconductor devices at least comprises:
First Semiconductor substrate is provided, described first Semiconductor substrate is formed the first aluminium welding pad and the second aluminium welding pad;
Second Semiconductor substrate is provided, described second Semiconductor substrate is formed with syndeton, described syndeton and described first aluminium welding pad one_to_one corresponding;
Described first aluminium welding pad is connected with syndeton, to make described second Semiconductor substrate and described first Semiconductor substrate bonding;
Cut the segment thickness of described second Semiconductor substrate, the cut place of described second Semiconductor substrate is corresponding with described second aluminium welding pad;
Deionized water is utilized to clean described second aluminium welding pad;
Utilize dry etching to etch the cut place of described second Semiconductor substrate, described second semiconductor is ruptured from cut, exposes described second aluminium welding pad;
Described first Semiconductor substrate and the second semiconductor are cleaned.
2. the formation method of MEMS semiconductor devices according to claim 1, it is characterized in that: described first semiconductor substrate surface is formed with insulating barrier, before described second Semiconductor substrate is bonded in described first Semiconductor substrate, also comprise and the first Semiconductor substrate is etched, to expose the step of described first aluminium welding pad.
3. the formation method of MEMS semiconductor devices according to claim 2, it is characterized in that: after with the step exposing described first aluminium welding pad, before the step be connected with syndeton by described first aluminium welding pad, also comprise the step utilizing HF deionized water solution to remove the natural oxide film on described first aluminium welding pad and the second aluminium welding pad.
4. the formation method of MEMS semiconductor devices according to claim 1, it is characterized in that: after removing the oxide-film on described second aluminium welding pad, also comprise the step of described second aluminium welding pad and metal wire being carried out bonding or being connected with test probe by described second aluminium welding pad.
5. the formation method of MEMS semiconductor devices according to claim 1, it is characterized in that: described second aluminium welding pad comprise around described second aluminium welding pad periphery adhering and sealing ring and be positioned at the test contact area at described second aluminium welding pad center, described test contact area is lower than described adhering and sealing ring.
6. the formation method of MEMS semiconductor devices according to claim 1, is characterized in that: the protuberance that described second Semiconductor substrate comprises flat part and is connected with described flat part, and described syndeton is described protuberance.
7. the formation method of MEMS semiconductor devices according to claim 1, is characterized in that: in the step of the segment thickness of described second Semiconductor substrate of described cutting, and the thickness retaining the second Semiconductor substrate is 20 μm ~ 30 μm.
8. the formation method of MEMS semiconductor devices according to claim 1, is characterized in that: adopt rotary washer platform to carry out the step of cleaning described first Semiconductor substrate and the second Semiconductor substrate.
9. the formation method of MEMS semiconductor devices according to claim 8, is characterized in that: adopt rotary washer platform to carry out also comprising the step of described first Semiconductor substrate and the cleaning of the second semiconductor: to detect the step whether described cleaning completes.
10. the formation method of MEMS semiconductor devices according to claim 1, is characterized in that: be formed with device layer in described first Semiconductor substrate.
CN201410105998.1A 2014-03-20 2014-03-20 The forming method of MEMS semiconductor devices CN104925742B (en)

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JP2003273043A (en) * 2002-03-19 2003-09-26 Iwate Toshiba Electronics Co Ltd Method of manufacturing semiconductor device
JP2005051007A (en) * 2003-07-28 2005-02-24 Tokyo Electron Ltd Manufacturing method of semiconductor chip
CN1650420A (en) * 2002-07-12 2005-08-03 赋权新加坡私人有限公司 Method and wafer for maintaining ultra clean bonding pads on a wafer
US20120149152A1 (en) * 2010-12-13 2012-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. Method to prevent metal pad damage in wafer level package
CN102569036A (en) * 2012-03-09 2012-07-11 常州银河半导体有限公司 Silicon wafer cleaning technology
CN103633201A (en) * 2012-08-29 2014-03-12 晶翰光电材料股份有限公司 Regeneration method of graphical sapphire substrate

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020072213A1 (en) * 2000-12-08 2002-06-13 Tao-Kuang Chang Method of fabricating soldering balls for semiconductor encapsulation
JP2003273043A (en) * 2002-03-19 2003-09-26 Iwate Toshiba Electronics Co Ltd Method of manufacturing semiconductor device
CN1650420A (en) * 2002-07-12 2005-08-03 赋权新加坡私人有限公司 Method and wafer for maintaining ultra clean bonding pads on a wafer
JP2005051007A (en) * 2003-07-28 2005-02-24 Tokyo Electron Ltd Manufacturing method of semiconductor chip
US20120149152A1 (en) * 2010-12-13 2012-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. Method to prevent metal pad damage in wafer level package
CN102569036A (en) * 2012-03-09 2012-07-11 常州银河半导体有限公司 Silicon wafer cleaning technology
CN103633201A (en) * 2012-08-29 2014-03-12 晶翰光电材料股份有限公司 Regeneration method of graphical sapphire substrate

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