CN104882166A - Flash memory, erasing method and programming method - Google Patents
Flash memory, erasing method and programming method Download PDFInfo
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- CN104882166A CN104882166A CN201410067931.3A CN201410067931A CN104882166A CN 104882166 A CN104882166 A CN 104882166A CN 201410067931 A CN201410067931 A CN 201410067931A CN 104882166 A CN104882166 A CN 104882166A
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Abstract
The invention relates to the technical field of memories and particularly relates to a flash memory, an erasing method thereof and a programming method of the flash memory. The flash memory comprises a memory array. The memory array comprises a data memory module and a translation lookaside buffer module. The data memory module comprises m data memory submodules. The translation lookaside buffer module comprises m translation lookaside buffer submodules. The m translation lookaside buffer submodules respectively memory erasing conditions and/or programming conditions of the m data memory submodules. When a pre-erasing or pre-programming data memory submodule in the memory array is erased or programmed, erasing or programming conditions stored in the translation lookaside buffer submodule corresponding to the pre-erasing or pre-programming data memory submodule are acquired, and then the pre-erasing or pre-programming data memory submodule is subjected to erasing or programming operation according to the erasing or programming conditions stored in the translation lookaside buffer submodule. According to the technical scheme provided in embodiments, erasing or programming performance of the flash memory is improved, thus improving reliability of the flash memory.
Description
Technical field
The present invention relates to memory technology field, particularly relate to method for deleting and the programmed method of a kind of FLASH memory storage and FLASH memory storage.
Background technology
The use of FLASH memory storage is erasing repeatedly and programming mainly, and to the process storing data in FLASH memory storage and read.
The erasing of FLASH memory storage or programming refer to according to erased conditions default in FLASH memory storage and program conditions, change storage unit threshold voltage, and then change the process of storage unit stores data state.Erased conditions or program conditions instigate the condition of storage unit threshold voltage variation, such as time step or the change frequency etc. of step-length when storage unit control gate (CG) voltage, source electrode (S) voltage, storage unit place well region voltage and erasing or programming; With this, change the threshold voltage of storage unit, and then change memory cell data store status, store data 0 or store data 1.
In prior art, the erased conditions that FLASH memory storage is preset or program conditions solidification in the storage device, along with the continuity of FLASH memory storage life cycle, can't change.But along with the continuity of life cycle, the impact of voltage etc. when storage unit is owing to being subject to erasing, programming or reading in FLASH memory storage in prior art, in storage unit, the distribution of electric charge can change, and then change the threshold voltage of storage unit, erasing default in FLASH memory storage or program conditions is made effectively not to wipe storage unit in FLASH memory storage or to programme, and then the erasing of FLASH memory storage or program performance are reduced, affect the reliability of FLASH memory storage.
Summary of the invention
The object of the invention is to the method for deleting and the programmed method that propose a kind of FLASH memory storage and FLASH memory storage, to promote the reliability of FLASH memory storage.
In first aspect, embodiments provide a kind of FLASH memory storage, comprising:
Storage array;
Described storage array comprises data memory module and shows module soon;
Described data memory module comprises m sub-data memory module;
Described fast watch module comprises m son and shows module soon, and described m son fast table module stores erased conditions and/or the program conditions of described m sub-data memory module respectively; Described erased conditions or program conditions refer to put on subdata memory module, to make the condition of storage unit threshold voltage variation in subdata memory module;
When erasing pre-in storage array or pre-programmed subdata memory module are wiped or are programmed, obtain the son corresponding with described pre-erasing or pre-programmed subdata memory module and show the erasing that stores in module or program conditions soon, show the erasing of module stores soon according to described son or program conditions carries out erase operation or programming operation to described pre-erasing or pre-programmed subdata memory module;
Wherein, m is positive integer, 1≤m.
Further, described FLASH memory storage, described m son fast table module stores the erased conditions of described m sub-data memory module respectively;
During erasing, obtain the address of pre-erasing subdata memory module in erasing instruction;
According to the address of described pre-erasing subdata memory module, obtain the erased conditions stored in the corresponding son of described pre-erasing subdata memory module fast table module;
According to described erased conditions, erase operation is carried out to pre-erasing subdata memory module; And;
After erasure completion, upgrade the erased conditions in son fast table module corresponding to described pre-erasing subdata memory module according to described erase operation.
Further, described FLASH memory storage, described m son fast table module stores the program conditions of described m sub-data memory module respectively;
During programming, obtain the address of pre-programmed subdata memory module in programming instruction;
According to the address of described programming except subdata memory module, obtain the program conditions stored in the corresponding son of described pre-programmed subdata memory module fast table module;
According to described program conditions, programming operation is carried out to pre-programmed subdata memory module; And;
After having programmed, upgrade the program conditions in son fast table module corresponding to described pre-programmed subdata memory module according to described programming operation.
Further, described FLASH memory storage, also comprises:
Bit line select circuitry, described bit line select circuitry is electrically connected on the drain electrode of storage unit in the data memory module of described storage array; To select the storage unit in data memory module;
Word line driving circuit, described word line driving circuit is electrically connected on the control gate of storage unit in described data memory module, storage unit required voltage in data memory module during to provide erasing or to programme;
Logic control element; Logic control required when providing described FLASH memory storage to work.
Further, m described in described FLASH memory storage sub-data memory module size is identical.
In second aspect, the embodiment of the present invention additionally provides a kind of method for deleting of FLASH memory storage, comprising:
FLASH memory storage receives erasing instruction;
According to described erasing instruction, obtain the address of pre-erasing subdata memory module;
According to the address of described pre-erasing subdata memory module, obtain the erased conditions showing soon with the son corresponding to described pre-erasing subdata memory module to store in module;
According to described erased conditions, erase operation is carried out to described pre-erasing subdata memory module.
Further, the method for deleting of described FLASH memory storage, also comprises: after erase operation completes, and shows the erased conditions in module according to described erase operation upgraded corresponding to described pre-erasing subdata memory module soon.
Further, the method for deleting of described FLASH memory storage, described after erase operation completes, the erased conditions in module is shown soon according to described erase operation upgraded corresponding to described pre-erasing subdata memory module; Comprise:
After erase operation completes, according to the complexity that described erase operation performs, the son upgraded corresponding to described pre-erasing subdata memory module shows the erased conditions in module soon
In the third aspect, the embodiment of the present invention additionally provides a kind of programmed method of FLASH memory storage, comprising:
FLASH memory storage receives programming instruction;
According to described programming instruction, obtain the address of pre-programmed subdata memory module;
According to the address of described pre-programmed subdata memory module, obtain the program conditions showing soon with the son corresponding to described pre-programmed subdata memory module to store in module;
According to described program conditions, programming operation is carried out to described pre-programmed subdata memory module.
Further, the programmed method of described FLASH memory storage, also comprises: after programming operation completes, and shows the program conditions in module according to described programming operation upgraded corresponding to described pre-programmed subdata memory module soon.
Further, the programmed method of described FLASH memory storage, described after programming operation completes, the program conditions in module is shown soon according to described programming operation upgraded corresponding to described pre-programmed subdata memory module; Comprise:
After programming operation completes, according to the complexity that described programming operation performs, the son upgraded corresponding to described pre-programmed subdata memory module shows the program conditions in module soon.
The FLASH memory storage that the embodiment of the present invention provides, method for deleting and programmed method; Show the erasing that stores or program conditions soon according to height every in FLASH memory storage soon watch module to store data module to erasing pre-in FLASH memory storage or pre-programmed and carry out erase operation or programming operation; Simultaneously, when the erasing of FLASH memory storage or after having programmed, according to the complexity that erase operation or programming operation carry out, upgrade erased conditions or program conditions that the pre-erasing of erasing or programming or son corresponding to pre-programmed subdata memory module show to store in module soon.When again wiping pre-erasing or pre-programmed subdata memory module or programme, carry out wiping or programming according to the erased conditions newly formed or program conditions.Therefore, technical solution of the present invention, the erased conditions of FLASH memory storage or program conditions are wiped or real-time update after having programmed each, make the continuity along with FLASH memory storage life cycle, corresponding erased conditions or program conditions be corresponding change also, to adapt to the change of the CHARGE DISTRIBUTION caused along with the continuity of life cycle in FLASH memory storage, ensure that the erasing of FLASH memory storage or the performance of programming, and then improve the reliability of FLASH memory storage.
Accompanying drawing explanation
Accompanying drawing described herein is used to provide a further understanding of the present invention, forms a part of the present invention, does not form limitation of the invention.In the accompanying drawings:
Shown in Fig. 1 is FLASH memory device structure schematic diagram in the embodiment of the present invention one;
Shown in Fig. 2 is FLASH memory storage method for deleting schematic flow sheet in the embodiment of the present invention two;
Shown in Fig. 3 is FLASH memory storage programmed method schematic flow sheet in the embodiment of the present invention three.
Embodiment
Below in conjunction with drawings and the specific embodiments, the present invention is carried out more in detail and complete explanation.Be understandable that, specific embodiment described herein is only for explaining the present invention, but not limitation of the invention.It also should be noted that, for convenience of description, illustrate only part related to the present invention in accompanying drawing but not full content.
Shown in Fig. 1 is FLASH memory device structure schematic diagram in the embodiment of the present invention one; With reference to figure 1, FLASH memory storage in the present embodiment, comprising:
Storage array 11; Storage array 11 comprises data memory module 111 and fast table module 112.Fast table module 112 comprises can according to the erased conditions of subdata memory module or a look-up table of program conditions corresponding to the address maps current address of pre-erasing or pre-programmed subdata memory module; This look-up table is a non-volatile storage list simultaneously, can not lose information because of system power failure; And, son fast table module comprises a look-up table of corresponding erased conditions that corresponding subdata memory module maps or program conditions, and be understandable that every height shows the division of module according to subdata memory module soon, identical erased conditions or program conditions can be stored, also can store different erased conditions or program conditions.
Data memory module 111 comprises subdata memory module 1, subdata memory module 2 ... the m such as subdata memory module m sub-data memory module 111a.Concrete, in the present embodiment, the division of data memory module 111 neutron data memory module 111a, can divide with identical size, also can incoordinate size divide; Can divide with the distribution of storage block in storage array, also can dividing respectively with page in storage array (page), do not do concrete restriction in the present embodiment.
Fast watch module 112 comprises the fast watch module 1 of son, the fast watch module 2 of son, son fast table module 3 ... m the son fast table module 112a such as the fast watch module m-1 of son, the fast watch module m of son, m son fast table module stores erased conditions and/or the program conditions of m sub-data memory module respectively, wherein, m is positive integer, 1≤m; That is to say that each height shows erased conditions or the/program conditions that module 112a stores subdata memory module 111a corresponding thereto respectively soon.Concrete, only can store erased conditions, also only can store program conditions, XOR can store erased conditions and program conditions simultaneously, does not do concrete restriction, can make corresponding adjustment according to concrete actual needs in this enforcement to this.Erased conditions or program conditions refer to put on subdata memory module 111a, to make the condition of storage unit threshold voltage variation in subdata memory module 111a.
When erasing pre-in storage array 11 or pre-programmed subdata memory module 111a being wiped or are programmed at every turn, obtain the son corresponding with described pre-erasing or pre-programmed subdata memory module 111a and show the erasing that stores in module 112a or program conditions soon, show erasing that module 112a stores or program conditions soon to wipe in advance or pre-programmed subdata memory module 111a carries out erase operation or programming operation according to described son; Erase operation or programming operation refer under described erased conditions and program conditions effect, change the threshold voltage of storage unit in pre-erasing or pre-programmed subdata memory module 111a, to change the state of described storage unit stores data.
Further, with reference to figure 1, also comprise in the present embodiment: bit line select circuitry 12, word line driving circuit 13 and logic control element 14; Logic control element 14 is connected to bit line select circuitry 12 and word line driving circuit 13.
Bit line select circuitry 12 is electrically connected on the drain electrode (D) of storage unit in the data memory module 111 of storage array 11; To select the storage unit in data memory module 111.Concrete, when bit line select circuitry 12 storage unit in data memory module 111 reads, select respective memory unit in data memory module 111 to carry out the reading of data by bit line select circuitry 12.
Word line driving circuit 13, word line driving circuit 13 is electrically connected on the control gate of storage unit in described data memory module 111, storage unit required voltage in data memory module 111 during to provide erasing or to programme.Concrete, when carrying out programming operation or erase operation, according to erased conditions or program conditions, apply the control gate of corresponding voltage to storage array 11 storage unit by word line driving circuit 13, and then change the threshold voltage of storage unit, complete erasing or programming.
Logic control element 14; Logic control required when providing described FLASH memory storage to work.When carrying out erase operation or programming operation, logic control element 14, by control word line drive circuit 13 and bit line select circuitry 12, realizes the erasing to FLASH memory storage and programming.
Concrete, with reference to figure 1, when m son fast table module stores the erased conditions of m sub-data memory module respectively in the present embodiment; That is to say that m son fast table module stores has erased conditions, or when storing erased conditions and program conditions simultaneously, to the erasing of FLASH memory storage, that is to say when erasing subdata memory module is wiped in advance in FLASH memory storage, perform:
Obtain the address of pre-erasing subdata memory module in erasing instruction.Concrete, when FLASH memory storage sends erasing instruction, the address that decoding obtains pre-erasing subdata memory module in erasing instruction is carried out to erasing instruction.Meanwhile, the address maps wiping subdata memory module is in advance shown module 112a soon to the son corresponding to corresponding pre-erasing subdata memory module 111a and pre-erasing subdata memory module 111a.
According to the address of described pre-erasing subdata memory module 111a, obtain the erased conditions stored in the corresponding son of described pre-erasing subdata memory module 111a fast table module 112a.Concrete, after the address maps wiping subdata memory module 111a is in advance shown module 112a soon to the son corresponding to corresponding pre-erasing subdata memory module 111a and pre-erasing subdata memory module 111a, obtain the erased conditions stored in son fast table module 112a.
According to described erased conditions, erase operation is carried out to pre-erasing subdata memory module 111a.Concrete, according to the erased conditions obtained, storage unit control gate in corresponding pre-erasing subdata memory module 111a is applied to the modes such as voltage, change the threshold voltage of storage unit, and then change the data mode of storage unit, will the storage unit of data 0 be stored, be adjusted to and store data 1.
Erasing or rear complexity of wiping according to this or programme of having programmed judge erasing or the program conditions of this subdata memory module next time, and the son upgrading this subdata memory module corresponding is shown soon.The erased conditions in son fast table module 112a corresponding to described pre-erasing subdata memory module 111a is upgraded according to described erase operation.Concrete, according to the complexity that erase operation in erase process performs, upgrade the erased conditions stored in the corresponding son of pre-erasing subdata module fast table module.Concrete, when the erased conditions stored in the more sub fast table module of actual erase condition in erase process is easy, the erased conditions then stored in son fast table module is effectively can wipe pre-erasing subdata memory module, and now upgrading the erased conditions of depositing in the fast watch module of son is keep the erased conditions stored in son fast table module not change; When the erased conditions stored in the more sub fast table module of actual erase condition in erase process is difficult, upgrade the erased conditions in adjustment fast table module, when pre-erasing subdata memory module being wiped to make next time, effectively can wipe corresponding pre-erasing subdata memory module according to the erased conditions after renewal, promote and wipe performance.
Concrete, with reference to figure 1, in the present embodiment, when described m fast table module stores the program conditions of described m sub-memory module respectively; That is to say that m son fast table module stores has program conditions, or when storing erased conditions and program conditions, to the programming of FLASH memory storage, that is to say pre-programmed subdata module in FLASH memory storage simultaneously, perform:
Obtain the address of pre-programmed subdata memory module in programming instruction.Concrete, when FLASH memory storage sends programming instruction, the address that decoding obtains pre-programmed subdata memory module in programming instruction is carried out to programming instruction.Meanwhile, the son corresponding to the address maps of pre-programmed subdata memory module to corresponding pre-programmed subdata memory module 111a and pre-programmed subdata memory module 111a is shown module 112a soon.
According to the address of described pre-programmed subdata memory module, obtain the program conditions stored in the corresponding son of described pre-programmed subdata memory module fast table module.Concrete, after the address maps of pre-programmed subdata memory module is shown module 112a soon to the corresponding son with programming corresponding to subdata memory module 111a and pre-programmed subdata memory module 111a, obtain the program conditions stored in son fast table module 112a.
According to described program conditions, programming operation is carried out to pre-programmed subdata memory module.Concrete, according to the program conditions obtained, storage unit control gate in corresponding pre-programmed subdata memory module is applied to the modes such as voltage, change the threshold voltage of storage unit, carry out the data mode changing storage unit, will the storage unit of data 1 be stored, be adjusted to and store data 0.
After having programmed, upgrade the program conditions in son fast table module corresponding to described pre-programmed subdata memory module according to described programming operation.Concrete, according to the complexity that programming operation in programming process performs, upgrade the program conditions stored in the corresponding son of pre-programmed subdata module fast table module.Concrete, when the program conditions stored in the more sub fast table module of actual program condition in programming process is easy, the program conditions then stored in son fast table module is effectively can programme to pre-programmed subdata memory module, and now upgrading the program conditions of depositing in the fast watch module of son is keep the program conditions stored in son fast table module not change; When the program conditions stored in the more sub fast table module of actual program condition in programming process is difficult, upgrade the program conditions in adjustment fast table module, when this pre-programmed subdata memory module being programmed to make next time, according to the program conditions after renewal, corresponding pre-programmed subdata memory module effectively can be programmed, promote program performance.
Optionally, in the present embodiment, m sub-data memory module size is identical.
Optionally, in the present embodiment, m sub-data memory module varies in size.
The FLASH memory storage that the present embodiment provides, method for deleting and programmed method; The erasing of module stores is shown soon or program conditions carries out erase operation or programming operation to FLASH memory storage according to height every in FLASH memory storage soon watch module; Simultaneously, when the erasing of FLASH memory storage or after having programmed, according to the complexity that erase operation or programming operation carry out, upgrade erased conditions or program conditions that the corresponding pre-erasing of erasing or programming or son corresponding to pre-programmed subdata memory module show to store in module soon.When again wiping corresponding pre-erasing or pre-programmed subdata memory module or programme, carry out wiping or programming according to the erased conditions newly formed or program conditions.Therefore, the present embodiment technical scheme, the erased conditions of FLASH memory storage or program conditions each erasing or after programme to the program conditions corresponding to programming or the address of wiping or erased conditions real-time update, make the continuity along with FLASH memory storage life cycle, corresponding erased conditions or program conditions be corresponding change also, ensure that the performance of the erasing of FLASH memory storage or programming, and then improve the reliability of FLASH memory storage.
Shown in Fig. 2 is FLASH memory storage method for deleting schematic flow sheet in the embodiment of the present invention two; With reference to figure 2, the method for deleting of FLASH memory storage in the present embodiment, comprising:
Step 201, FLASH memory storage receive erasing instruction.
Step 202, according to described erasing instruction, obtain the address of pre-erasing subdata memory module.
Step 203, address according to described pre-erasing subdata memory module, obtain the erased conditions showing soon with the son corresponding to described pre-erasing subdata memory module to store in module.
Step 204, according to described erased conditions, erase operation is carried out to described pre-erasing subdata memory module.
Concrete, in the present embodiment, after erase operation completes, show the erased conditions in module soon according to described erase operation upgraded corresponding to described pre-erasing subdata memory module.
More specifically, in the present embodiment, after erase operation completes, according to the complexity that described erase operation performs, the son upgraded corresponding to described pre-erasing subdata memory module shows the erased conditions in module soon.
The method for deleting that the present embodiment provides; According to the erased conditions that height every in the fast watch module of FLASH memory storage shows module stores soon, erase operation is carried out to FLASH memory storage; Meanwhile, when after the erasure completion of FLASH memory storage, according to the complexity that erase operation carries out, upgrade the erased conditions that the son corresponding to pre-erasing subdata memory module wiped is shown to store in module soon.When again wiping pre-erasing subdata memory module, wipe according to the new erased conditions formed.Therefore, technical solution of the present invention, the erased conditions of FLASH memory storage touches the erased conditions real-time update in affiliated corresponding son fast table module to the storage of pre-erasing subdata after each erasure completion, make the continuity along with FLASH memory storage life cycle, corresponding erased conditions is corresponding change also, ensure that the performance that FLASH memory storage is wiped, and then improve the reliability of FLASH memory storage.
Shown in Fig. 3 is FLASH memory storage programmed method schematic flow sheet in the embodiment of the present invention three; With reference to figure 3, the programmed method of FLASH memory storage in the present embodiment, comprising:
Step 301, FLASH memory storage receive programming instruction.
Step 302, according to described programming instruction, obtain the address of pre-programmed subdata memory module.
Step 303, address according to described pre-programmed subdata memory module, obtain the program conditions showing soon with the son corresponding to described pre-programmed subdata memory module to store in module.
Step 304, according to described program conditions, programming operation is carried out to described pre-programmed subdata memory module.
Concrete, in the present embodiment, after programming operation completes, show the program conditions in module soon according to described programming operation upgraded corresponding to described pre-programmed subdata memory module.
More specifically, in the present embodiment, after programming operation completes, according to the complexity that described programming operation performs, the son upgraded corresponding to described pre-programmed subdata memory module shows the program conditions in module soon.
The programmed method that the present embodiment provides; According to the program conditions that height every in FLASH memory storage soon watch module shows module stores soon, programming operation operation is carried out to FLASH memory storage; Meanwhile, after FLASH memory storage has been programmed, operate the complexity of carrying out according to programming operation, more the son corresponding to pre-programmed subdata memory module of new program shows the program conditions that stores in module soon.When again programming to corresponding pre-programmed subdata memory module, programme according to the new program conditions formed.Therefore, the present embodiment technical scheme, program conditions real-time update after at every turn having programmed of FLASH memory storage, make the continuity along with FLASH memory storage life cycle, corresponding program conditions is corresponding change also, ensure that the performance that FLASH memory storage is programmed, and then improve the reliability of FLASH memory storage.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, to those skilled in the art, the present invention can have various change and change.All do within spirit of the present invention and principle any amendment, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (11)
1. a FLASH memory storage, is characterized in that, comprises storage array; Described storage array comprises data memory module and shows module soon;
Described data memory module comprises m sub-data memory module;
Described fast watch module comprises m son and shows module soon, and described m son fast table module stores erased conditions and/or the program conditions of described m sub-data memory module respectively; Described erased conditions or program conditions refer to put on subdata memory module, to make the condition of storage unit threshold voltage variation in subdata memory module;
When erasing pre-in storage array or pre-programmed subdata memory module are wiped or are programmed, obtain the son corresponding with described pre-erasing or pre-programmed subdata memory module and show the erasing that stores in module or program conditions soon, show the erasing of module stores soon according to described son or program conditions carries out erase operation or programming operation to described pre-erasing or pre-programmed subdata memory module;
Wherein, m is positive integer, 1≤m.
2. FLASH memory storage as claimed in claim 1, is characterized in that, described m son fast table module stores the erased conditions of described m sub-data memory module respectively;
During erasing, obtain the address of pre-erasing subdata memory module in erasing instruction;
According to the address of described pre-erasing subdata memory module, obtain the erased conditions stored in the corresponding son of described pre-erasing subdata memory module fast table module;
According to described erased conditions, erase operation is carried out to pre-erasing subdata memory module; And;
After erasure completion, upgrade the erased conditions in son fast table module corresponding to described pre-erasing subdata memory module according to described erase operation.
3. FLASH memory storage as claimed in claim 1, is characterized in that, described m son fast table module stores the program conditions of described m sub-data memory module respectively;
During programming, obtain the address of pre-programmed subdata memory module in programming instruction;
According to the address of described programming except subdata memory module, obtain the program conditions stored in the corresponding son of described pre-programmed subdata memory module fast table module;
According to described program conditions, programming operation is carried out to pre-programmed subdata memory module; And;
After having programmed, upgrade the program conditions in son fast table module corresponding to described pre-programmed subdata memory module according to described programming operation.
4. FLASH memory storage as claimed in claim 1, is characterized in that, also comprise:
Bit line select circuitry, described bit line select circuitry is electrically connected on the drain electrode of storage unit in the data memory module of described storage array; To select the storage unit in data memory module;
Word line driving circuit, described word line driving circuit is electrically connected on the control gate of storage unit in described data memory module, storage unit required voltage in data memory module during to provide erasing or to programme;
Logic control element; Logic control required when providing described FLASH memory storage to work.
5. FLASH memory storage as claimed in claim 1, is characterized in that, described m sub-data memory module size is identical.
6. a method for deleting for FLASH memory storage, is applied to the FLASH memory storage that claim 1 shows to store in module erased conditions soon, it is characterized in that, comprising:
FLASH memory storage receives erasing instruction;
According to described erasing instruction, obtain the address of pre-erasing subdata memory module;
According to the address of described pre-erasing subdata memory module, obtain the erased conditions showing soon with the son corresponding to described pre-erasing subdata memory module to store in module;
According to described erased conditions, erase operation is carried out to described pre-erasing subdata memory module.
7. the method for deleting of FLASH memory storage as claimed in claim 6, is characterized in that, also comprise: after erase operation completes, and shows the erased conditions in module according to described erase operation upgraded corresponding to described pre-erasing subdata memory module soon.
8. the method for deleting of FLASH memory storage as claimed in claim 7, is characterized in that, described after erase operation completes, and shows the erased conditions in module according to described erase operation upgraded corresponding to described pre-erasing subdata memory module soon; Comprise:
After erase operation completes, according to the complexity that described erase operation performs, the son upgraded corresponding to described pre-erasing subdata memory module shows the erased conditions in module soon.
9. a programmed method for FLASH memory storage, is applied to the FLASH memory storage that claim 1 shows to store in module program conditions soon, it is characterized in that, comprising:
FLASH memory storage receives programming instruction;
According to described programming instruction, obtain the address of pre-programmed subdata memory module;
According to the address of described pre-programmed subdata memory module, obtain the program conditions showing soon with the son corresponding to described pre-programmed subdata memory module to store in module;
According to described program conditions, programming operation is carried out to described pre-programmed subdata memory module.
10. the programmed method of FLASH memory storage as claimed in claim 9, is characterized in that, also comprise: after programming operation completes, show the program conditions in module according to described programming operation upgraded corresponding to described pre-programmed subdata memory module soon.
The programmed method of 11. FLASH memory storages as claimed in claim 10, is characterized in that, described after programming operation completes, and shows the program conditions in module according to described programming operation upgraded corresponding to described pre-programmed subdata memory module soon; Comprise:
After programming operation completes, according to the complexity that described programming operation performs, the son upgraded corresponding to described pre-programmed subdata memory module shows the program conditions in module soon.
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