CN104851872B - A kind of integrated circuit structure and preparation method thereof - Google Patents

A kind of integrated circuit structure and preparation method thereof Download PDF

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Publication number
CN104851872B
CN104851872B CN201410053488.4A CN201410053488A CN104851872B CN 104851872 B CN104851872 B CN 104851872B CN 201410053488 A CN201410053488 A CN 201410053488A CN 104851872 B CN104851872 B CN 104851872B
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China
Prior art keywords
metal
integrated circuit
isolating
fuse
layer
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CN201410053488.4A
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Chinese (zh)
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CN104851872A (en
Inventor
潘光燃
文燕
石金成
高振杰
王焜
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北大方正集团有限公司
深圳方正微电子有限公司
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Publication of CN104851872A publication Critical patent/CN104851872A/en
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Publication of CN104851872B publication Critical patent/CN104851872B/en

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Abstract

The invention discloses a kind of integrated circuit structure and preparation method thereof, and to solve in metal fusing process, the problem of short-circuit occurs between metal fuse and substrate.The integrated circuit structure includes:Substrate, insulating protective layer, metal fuse and isolating metal part, the metal fuse insulate with substrate and insulating protective layer;The isolating metal part is arranged between metal fuse and substrate, and the isolating metal part and above-mentioned metal fuse and insulated substrate;The metal fuse is exposed in the space to be formed is performed etching to the presumptive area of insulating protective layer, and the size of the presumptive area is not more than isolating metal part relative to the laminated size of insulation protection.

Description

A kind of integrated circuit structure and preparation method thereof

Technical field

The present invention relates to integrated circuit fields, more particularly to a kind of integrated circuit structure and preparation method thereof.

Background technology

In integrated circuits, several metal fuses are usually provided with, metal fuse is the metal being located in integrated circuit Resistance.Specific method is taken, may be such that metal fuse fuses, that is, reaches the purpose of open circuit, and when metal fuse does not have When fusing, it is conducting, i.e., by not fusing or blown metal fuse, can reach adjustment integrated circuit function or The purpose of parameter, the process of this adjustment referred to as " trim ".

As shown in Figures 1 and 2(The planar structure schematic diagram for integrated circuit structure shown in the Fig. 1, Fig. 2 show Fig. 1 Sectional drawing of the shown planar structure schematic diagram along AB lines)Structure, in the prior art integrated circuit structure include substrate 101, absolutely Edge protective layer 102 and dielectric layer 103(The material of dielectric layer typically uses silica, for isolating metal layer and substrate), metal Fuse 104, wherein metal fuse 104 are the bonding jumpers of certain length, width, and metal fuse 104 is located at substrate 101 to be protected with insulation Between sheath 102.To make metal fuse 104 when fusing, its metal can be fully played, it is necessary to be protected to insulation Sheath 102 performs etching so that metal fuse 104 is exposed in the space to be formed is performed etching to insulating protective layer 102.

Because the etching technics of insulating protective layer 102 has higher selection ratio to metal level, and to the selection of dielectric layer 103 Than very low, therefore in the etching technics of insulating protective layer 102, the dielectric layer in the region in addition to the overlay area of metal fuse 104 103 can also be etched away in the lump, expose substrate 101, as shown in Figure 2.

When integrated circuit trims, part metals fuse is quickly by solid state transformed for liquid and then again quickly by liquid State is converted into gaseous state.In the process, most metal fuses vapors away in a gaseous form, it is possible that small part Metal fuse by liquid convert gaseous state when fail to convert in time, its molten metal penetrates into the surface of substrate, when penetrate into lining When the molten metal of basal surface is more, short circuit can occur between metal fuse and substrate so that integrated circuit is qualified after trimming Rate declines.

The content of the invention

The embodiments of the invention provide a kind of integrated circuit structure and preparation method thereof, to solve metal fuse fusing During, the problem of short-circuit occurs between metal fuse and substrate.

The embodiments of the invention provide a kind of integrated circuit structure, the integrated circuit structure includes:

Substrate, insulating protective layer, metal fuse and isolating metal part;

The metal fuse insulate with substrate and insulating protective layer;The isolating metal part is arranged at metal fuse and substrate Between, and the isolating metal part insulate with above-mentioned metal fuse and substrate;

The metal fuse is exposed in the space to be formed is performed etching to the presumptive area of insulating protective layer, the presumptive area Size no more than isolating metal part relative to the laminated size of insulation protection.

Such scheme utilize between metal fuse and substrate set isolating metal part, and the isolating metal part with Metal fuse and substrate insulate, so as to which when integrated circuit is trimmed, metal fuse is converted again by solid state transformed for liquid For gaseous state when, even if the molten metal for having least a portion of metal fuse permeates downwards, will not also touch substrate and cause metal fuse It is short-circuit between substrate.Improve the qualification rate after integrated circuit trims.

Preferably, integrated circuit structure can include multiple metal fuses, the corresponding isolation gold of each metal fuse Belong to a predeterminable area of part and corresponding above-mentioned insulating protective layer;

The size of predeterminable area is not more than isolating metal part phase corresponding to the metal fuse corresponding to each metal fuse For the laminated size of above-mentioned insulation protection.

Preferably, integrated circuit structure includes multiple metal fuses, each metal fuse corresponds to one of insulating protective layer Predeterminable area, and an isolating metal part is set;

Include the size of the overall area of predeterminable area corresponding to all metal fuses, no more than isolating metal part relative to The laminated size of insulation protection.

Based on above-mentioned any embodiment, preferably, integrated circuit structure includes between above-mentioned substrate and insulating protective layer There are at least two metal layers, the isolating metal part is formed by the wherein layer of metal layer of said integrated circuit structure, the metal Fuse is formed by the layer of metal layer in addition therein of integrated circuit structure.

Based on above-mentioned any embodiment, preferably, predeterminable area is rectangle.

Based on above-mentioned any embodiment, preferably, it is plane that isolating metal part is laminated relative to insulation protection.

Based on above-mentioned any embodiment, preferably, it is curved surface that isolating metal part is laminated relative to insulation protection.

Based on the inventive concept same with constructive embodiment, the embodiment of the present invention additionally provides a kind of integrated circuit structure Preparation method, this method include:

First medium layer, isolating metal part, second dielectric layer, metal fuse and insulation is sequentially formed on substrate to protect Sheath;

The predeterminable area of insulating protective layer is performed etching so that in the exposed space formed after etching of metal fuse, The size of the presumptive area is no more than isolating metal part relative to the laminated size of insulation protection.

Such scheme utilizes makes isolating metal part between metal fuse and substrate, and the isolating metal part leads to Cross first medium layer, second dielectric layer and metal fuse and substrate insulate, so as to which when integrated circuit is trimmed, metal melts Silk by it is solid state transformed for liquid be then converted to gaseous state when, even if the molten metal for having least a portion of metal fuse permeates downwards, also not Substrate can be touched and cause short circuit between metal fuse and substrate.Improve the qualification rate after integrated circuit trims.

Preferably, sequentially formed on substrate first medium layer, isolating metal part, second dielectric layer, metal fuse with And insulating protective layer, specifically include:

First medium layer, the first metal layer, second dielectric layer, second metal layer and insulation is sequentially formed on substrate to protect Sheath;And the first metal layer includes isolating metal part, second metal layer includes metal fuse.

Brief description of the drawings

Fig. 1 is the planar structure schematic diagram of integrated circuit structure in the prior art;

Fig. 2 is sectional drawing of the planar structure schematic diagram along AB lines shown in Fig. 1;

Fig. 3 is the planar structure schematic diagram of integrated circuit structure provided in an embodiment of the present invention;

Fig. 4 is sectional drawing of the planar structure schematic diagram along AB lines shown in Fig. 3 provided in an embodiment of the present invention;

Fig. 5 is the first sectional drawing that integrated circuit structure provided in an embodiment of the present invention includes multiple metal fuses;

Fig. 6 is second of sectional drawing that integrated circuit structure provided in an embodiment of the present invention includes multiple metal fuses;

Fig. 7 is the preparation method flow chart of integrated circuit structure provided in an embodiment of the present invention.

Embodiment

The embodiment of the present invention provides a kind of integrated circuit structure, to solve to repair in integrated circuit present in prior art Timing, during metal fuse fuses, the problem of short-circuit occurs between metal fuse and substrate.

Below in conjunction with accompanying drawing, embodiments of the present invention is further illustrated.The following drawings is only a kind of example, not to knot Structure, shape make specific limit.

The embodiments of the invention provide a kind of integrated circuit structure, as shown in Figure 3 and shown in Fig. 4, the integrated circuit structure Including:

Substrate 101, insulating protective layer 102, dielectric layer 103, metal fuse 104 and isolating metal part 105.

The metal fuse 104 insulate with substrate 101 and insulating protective layer 102.

The isolating metal part 105 is arranged between metal fuse 104 and substrate 101, and the isolating metal part 105 with Above-mentioned metal fuse 104 and substrate 101 insulate;The isolating metal part 105 is not also connected with other any current potentials.

Metal fuse 104 is exposed in the space to be formed is performed etching to the presumptive area of insulating protective layer 102, and this is predetermined Size of the size in region no more than isolating metal part 105 relative to the one side of insulating protective layer 102.

Above-mentioned isolating metal part 105 refers to relative to the size of the one side of insulating protective layer 102:Isolating metal part 105 In the area projected on the direction of insulating protective layer 102 on insulating protective layer 102.The size of so-called presumptive area is little Size in isolating metal part 105 relative to the one side of insulating protective layer 102, refer to that presumptive area falls into isolating metal part In the range of 105 projection on insulating protective layer 102, and projecting direction is perpendicular to the direction of insulating protective layer 102.

The size of predeterminable area can be set to be equal to chi of the isolating metal part 105 relative to the one side of insulating protective layer 102 It is very little, it is of course possible to set and be less than size of the isolating metal part 105 relative to the one side of insulating protective layer 102(It is as shown in figure 3, empty Wire frame is actual size of the isolating metal part 105 relative to the one side of insulating protective layer 102)

Preferably, if integrated circuit structure includes multiple metal fuses 104(With 3 metal fuses in the embodiment of the present invention Exemplified by), then an isolating metal part 105 can be set in integrated circuit structure, multiple isolating metal parts can also be set 105:

The first implementation(Corresponding to the multiple isolating metal parts 105 of setting), as shown in Figure 5:Each metal fuse 104 correspond to an isolating metal part 105 and corresponding above-mentioned insulating protective layer 102.

The size of predeterminable area is not more than isolating metal corresponding to the metal fuse 104 corresponding to each metal fuse 104 Part 105 relative to the above-mentioned one side of insulating protective layer 102 size.So that the quilt completely of substrate 101 positioned at predeterminable area Isolating metal part 105 covers and not exposed.

Second of implementation(Corresponding to only one isolating metal part 105 of setting), as shown in Figure 6:Each metal melts One predeterminable area of the corresponding insulating protective layer 102 of silk 104, and an isolating metal part 105 is set;

The size of the overall area of predeterminable area corresponding to all metal fuses 104 is included, no more than isolating metal part 105 Relative to the size of the one side of insulating protective layer 102.So that the substrate positioned at predeterminable area is entirely isolated metal parts 105 Covering and it is not exposed.

The third implementation(Corresponding to the multiple isolating metal parts 105 of setting):Multiple metal fuses 104 are divided Group, the corresponding isolating metal part 105 of every group of metal fuse 104, and comprising pre- corresponding to the metal fuse 104 in every group If the size of the overall area in region, no more than isolating metal 105 corresponding to the group relative to the chi of the one side of insulating protective layer 102 It is very little.

Such as:The metal fuse that be distributed comparatively dense can be divided into one group, can also be grouped as needed, specifically originally Inventive embodiments are not especially limited.

Preferably, predeterminable area is rectangle(In structure shown in Fig. 3 etch when predeterminable area using rectangle as Example).

Based on above-mentioned any embodiment, preferably, the shape of isolating metal part 105 is cuboid(Institute in Fig. 3 and Fig. 4 The isolating metal part 105 shown is by taking cuboid as an example).The size of above-mentioned isolating metal part 105 refers to isolating metal part 105 Relative to the length and width of the rectangular surfaces of insulating protective layer 102.In embodiments of the present invention for the thickness of isolating metal part 105 Degree is not specifically limited.

Certain isolating metal part 105 can also be other structures, and isolating metal part 105 is relative to insulating protective layer 102 one sides can be that curved surface can also be plane.

The embodiment of the present invention is not specifically limited to the structure of isolating metal part 105, only need to ensure isolating metal part 105 size is not less than the size of predeterminable area.

Such scheme utilizes and isolating metal part 105 is set between metal fuse 104 and substrate 101, and the isolation Metal parts 105 insulate with metal fuse 104 and substrate 101, so as to when integrated circuit is trimmed, metal fuse 104 by It is solid state transformed to be then converted to gaseous state for liquid, even if the molten metal for having least a portion of metal fuse 104 permeates downwards, will not also connect It is short-circuit between metal fuse 104 and substrate 101 to contact that substrate 101 causes.Improve the qualification rate after integrated circuit trims.

Based on above-mentioned any embodiment, preferably, integrated circuit structure above-mentioned substrate 101 and insulating protective layer 102 it Between include at least two metal layers, the isolating metal part 105 by said integrated circuit structure wherein layer of metal layer shape Into the metal fuse 104 is formed by the layer of metal layer in addition therein of integrated circuit structure.

For example, integrated circuit includes 2 layers of metal level altogether, second layer metal layer can be used to make metal fuse 104(If A length of 10um, a width of 0.5um), to the predeterminable area of insulating protective layer 102(It is long in the embodiment of the present invention by taking rectangular area as an example Degree could be arranged to 9.5um, width is arranged to 11um)Perform etching in the space to be formed, then in metal fuse 104 and substrate The isolating metal part 105 formed by first layer metal layer is set between 101(In the embodiment of the present invention with rectangular parallelepiped structure every Exemplified by metal parts), isolating metal part 105 could be arranged to relative to the length of the rectangular surfaces of insulating protective layer 102 15um, width could be arranged to 16um.

It can be seen from the example, metal fuse 104 can be not exclusively exposed relative to the one side of insulating protective layer 102.

Because the etching technics to insulating protective layer 102 has higher selection ratio to metal level, and to dielectric layer 103 Selection sets isolating metal part 105 than relatively low between metal fuse 104 and substrate 101, prevents to insulating protective layer When 102 predeterminable area performs etching, dielectric layer 103 is etched until substrate, metal fuse has solid-state during so as to avoid trimming When being converted into liquid and being then converted to gaseous state, even if the molten metal for having least a portion of metal fuse 104 permeates downwards, it will not also contact Caused to substrate 101 short-circuit between metal fuse 104 and substrate 101.Improve the qualification rate after integrated circuit trims.

Based on the inventive concept same with constructive embodiment, the embodiment of the present invention additionally provides a kind of integrated circuit structure system Make method, as shown in fig. 7, this method includes:

701:Sequentially formed on substrate first medium layer, isolating metal part, second dielectric layer, metal fuse and absolutely Edge protective layer;

702:The predeterminable area of insulating protective layer is performed etching so that the exposed space formed after etching of metal fuse In, the size of the presumptive area is not more than isolating metal part relative to the laminated size of insulation protection.

Such scheme utilizes makes isolating metal part between metal fuse and substrate, and the isolating metal part leads to Cross first medium layer, second dielectric layer and metal fuse and substrate insulate, so as to which when integrated circuit is trimmed, metal melts Silk by it is solid state transformed for liquid be then converted to gaseous state when, even if the molten metal for having least a portion of metal fuse permeates downwards, also not Substrate can be touched and cause short circuit between metal fuse and substrate.Improve the qualification rate after integrated circuit trims.

Preferably, sequentially formed on substrate first medium layer, isolating metal part, second dielectric layer, metal fuse with And insulating protective layer, specifically include:

First medium layer, the first metal layer, second dielectric layer, second metal layer and insulation is sequentially formed on substrate to protect Sheath;And the first metal layer includes isolating metal part, second metal layer includes metal fuse.

Obviously, those skilled in the art can carry out the essence of various changes and modification without departing from the present invention to the present invention God and scope.So, if these modifications and variations of the present invention belong to the scope of the claims in the present invention and its equivalent technologies Within, then the present invention is also intended to comprising including these changes and modification.

Claims (7)

  1. A kind of 1. integrated circuit structure, it is characterised in that including:
    Substrate, insulating protective layer, metal fuse and isolating metal part:
    The metal fuse insulate with the substrate and the insulating protective layer;
    The isolating metal part is arranged between the metal fuse and the substrate, and the isolating metal part with it is described Metal fuse and the substrate insulate;
    The metal fuse is exposed in the space to be formed is performed etching to the presumptive area of insulating protective layer, the presumptive area Size no more than the isolating metal part relative to the laminated size of the insulation protection;
    It is plane that the isolating metal part is laminated relative to the insulation protection;
    The integrated circuit structure includes multiple metal fuses, and each metal fuse correspond to the insulating protective layer one is default Region, and an isolating metal part is set;The size of the overall area of predeterminable area corresponding to all metal fuses is included, less In the isolating metal part relative to the laminated size of the insulation protection.
  2. 2. integrated circuit structure as claimed in claim 1, it is characterised in that the integrated circuit structure melts including multiple metals One predeterminable area of silk, the corresponding isolating metal part of each metal fuse and the corresponding insulating protective layer;
    The size of predeterminable area corresponding to each metal fuse no more than isolating metal part corresponding to the metal fuse relative to The laminated size of the insulation protection.
  3. 3. integrated circuit structure as claimed in claim 1, it is characterised in that the integrated circuit structure is in the substrate and absolutely Include at least two metal layers between edge protective layer, the isolating metal part is by wherein one layer of the integrated circuit structure Metal level is formed, and the metal fuse is formed by the layer of metal layer in addition therein of the integrated circuit structure.
  4. 4. the integrated circuit structure as described in any one of claims 1 to 3, it is characterised in that the predeterminable area is rectangle.
  5. 5. the integrated circuit structure as described in any one of claims 1 to 3, it is characterised in that the isolating metal part is relative Laminated in the insulation protection is curved surface.
  6. A kind of 6. preparation method of integrated circuit structure, it is characterised in that including:
    First medium layer, isolating metal part, second dielectric layer, metal fuse and insulation protection are sequentially formed on substrate Layer;
    The predeterminable area of insulating protective layer is performed etching so that in the exposed space formed after etching of the metal fuse, The size of the predeterminable area is no more than the isolating metal part relative to the laminated size of the insulation protection.
  7. 7. preparation method as claimed in claim 6, it is characterised in that it is described sequentially formed on substrate first medium layer, every From metal parts, second dielectric layer, metal fuse and insulating protective layer, specifically include:
    First medium layer, the first metal layer, second dielectric layer, second metal layer and insulation protection are sequentially formed on substrate Layer;The first metal layer includes isolating metal part, and the second metal layer includes metal fuse.
CN201410053488.4A 2014-02-17 2014-02-17 A kind of integrated circuit structure and preparation method thereof CN104851872B (en)

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CN201410053488.4A CN104851872B (en) 2014-02-17 2014-02-17 A kind of integrated circuit structure and preparation method thereof

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CN201410053488.4A CN104851872B (en) 2014-02-17 2014-02-17 A kind of integrated circuit structure and preparation method thereof

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CN104851872B true CN104851872B (en) 2018-02-13

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108630664A (en) * 2017-03-17 2018-10-09 中芯国际集成电路制造(上海)有限公司 Fuse-wires structure and forming method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6372556B1 (en) * 1999-10-20 2002-04-16 Samsung Electronics Co., Ltd. Semiconductor device having a fuse and fabricating method therefor
CN1901170A (en) * 2005-07-21 2007-01-24 台湾积体电路制造股份有限公司 Semiconductor device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4297677B2 (en) * 2002-10-29 2009-07-15 株式会社ルネサステクノロジ Manufacturing method of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6372556B1 (en) * 1999-10-20 2002-04-16 Samsung Electronics Co., Ltd. Semiconductor device having a fuse and fabricating method therefor
CN1901170A (en) * 2005-07-21 2007-01-24 台湾积体电路制造股份有限公司 Semiconductor device

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