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CN104795507B - 有机电致发光器件及其制造方法、电子设备 - Google Patents

有机电致发光器件及其制造方法、电子设备 Download PDF

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CN104795507B
CN104795507B CN201510180124.7A CN201510180124A CN104795507B CN 104795507 B CN104795507 B CN 104795507B CN 201510180124 A CN201510180124 A CN 201510180124A CN 104795507 B CN104795507 B CN 104795507B
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layer
light emitting
emitting layer
organic electroluminescent
light
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CN201510180124.7A
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CN104795507A (zh
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吴海东
邱云
赖韦霖
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京东方科技集团股份有限公司
鄂尔多斯市源盛光电有限责任公司
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Abstract

本发明的实施例提供了一种有机电致发光器件及其制造方法、和电子设备。所述有机电致发光器件包括:顺序地堆叠的阳极层、空穴传输层、第一发光层、第二发光层、电子传输层以及阴极层;其中,所述第一发光层和第二发光层包括相同的基质,并且所述第一发光层和/或第二发光层被掺杂,使得所述第一发光层的空穴迁移率与所述第二发光层的电子迁移率相等。本发明使用包括了相同基质的两个发光层,实现了空穴和电子的平衡注入,从而提高了有机电致发光器件的发光效率和寿命。

Description

有机电致发光器件及其制造方法、电子设备

技术领域

[0001] 本发明涉及显示技术领域,尤其涉及一种有机电致发光器件及其制造方法、电子设备。

背景技术

[0002] 有机电致发光器件(OLED)由于具有亮度高、色彩饱和、轻薄、可弯曲等优点而受到了平板显示与照明领域的高度重视。目前,常见有机电致发光器件的结构有顶发光器件结构和底发光器件结构两种,而顶发光器件结构与底发光器件结构相比,具有器开口率高、色纯度高、容易实现高PPI等优点,因此成为目前主流的有机电致发光器件结构。但是顶发光有机电致发光器件结构也存在一些技术问题,例如器件的效率低、驱动电压高、寿命较差、视角等问题。

[0003] 现有的有机电致发光器件结构,通常包括阳极层、空穴传输层(HTL)、发光层(EML)、电子传输层(ETL)、阴极层(如图1所示)。器件的工作原理为空穴从阳极注入,并在空穴传输层的HOMO能级(最高已占分子轨道)上传输,最终到达发光层的HOMO能级;而电子从阴极注入,在电子传输层的LUMO能级(最低未占分子轨道)上传输,最终到达发光层的LUMO能级。位于发光层LUMO能级上的电子,在外加电压的作用下,与位于发光层HOMO能级上的空穴发生复合,最终实现有机电致发光器件的发光。通常,最佳的器件结构要实现电子和空穴的平衡注入,使得每个电子和空穴都发生了复合,从而获得高效率的器件结构。然而,电子迀移率和空穴迀移率相同的发光材料是很难获得的。

[0004]由于发光层对于电子和空穴传输能力的不一致,进而导致传输到发光层界面处的电子和空穴,不能以相同的数量进入发光层发生复合,从而不利于有机电致发光器件效率和寿命的提尚。

发明内容

[0005] 有鉴于此,本发明的实施例提供了一种有机电致发光器件及其制造方法,实现了空穴和电子的平衡注入,从而提高了有机电致发光器件的发光效率和寿命。

[0006] 本发明的实施例提供了一种有机电致发光器件,包括:

[0007] 顺序地堆叠的阳极层、空穴传输层、第一发光层、第二发光层、电子传输层以及阴极层;

[0008] 其中,所述第一发光层和第二发光层包括相同的基质,并且所述第一发光层和/或第二发光层被掺杂,使得所述第一发光层的空穴迀移率与所述第二发光层的电子迀移率相等。

[0009] 现有的发光材料基质通常为空穴传输型(hole-transport)材料或电子传输型(electron-transport)材料。本发明的实施例使用同一种基质制作两个发光层,并使靠近阳极的发光层的空穴迀移率等于靠近阴极的发光层的电子迀移率;这样既能实现空穴和电子的平衡注入,又确保了两个发光层在物理性质上的匹配。本发明使用包括了相同基质的两个发光层,实现了空穴和电子的平衡注入,从而提高了有机电致发光器件的发光效率和寿命O

[0010] 较佳地,所述基质为4- (二氰乙烯基)-2-叔丁基-6- (I,I,7,7-四甲基久落尼定基-

4-乙烯基)-4H-吡喃(DCJTB)、8-羟基喹啉铝(Alq3)、2,3,5,6_四氟_7,7 ’,8,8 ’ -四氰二甲基对苯醌(F4-TCNQ)、4,4-二 (2,2-二苯乙烯基)-1,1-联苯(DPVBi)、或6,6-二 (2- (1-芘基)~4~苯基喹啉)(BPYPQ)。

[0011] 较佳地,所述第一发光层由ρ型掺杂剂掺杂,所述ρ型掺杂剂为2,3,5,6_四氟-7,7 ’,8,8 ’ -四氰二甲基对苯醌(F4-TCNQ)、三(4-溴苯基)六氯锑酸铵(TBAHA)、或4,4 ’,4〃-三(N- (1-萘基)-N-苯基氨基)三苯胺(TNATA)。

[0012] 较佳地,所述第二发光层由η型掺杂剂掺杂,所述η型掺杂剂为8-羟基喹啉锂(Liq)、氟化锂(LiF)、三联吡啶铬(Cr (bpy) 3)、或三联吡啶钌(Ru (bpy) 3)。

[0013] 较佳地,所述空穴传输层的材料为N,N’_二(1-萘基)-N,N’_二苯基-1,I’-联苯_4_4’-二胺(NPB)、三苯基二胺衍生物(TPD)、N,N’-二(苯基)-N,N’-二 (4’-(N,N-二(苯基胺基)-4-联苯基)联苯胺(TPTE)、或I,3,5-三(N-3-甲基苯基-N-苯基氨基)苯(TDAB)。

[0014] 较佳地,所述电子传输层的材料为2- (4-联苯基)-5-苯基恶二唑(PBD)、2,5_二(1-萘基)-1,3,5_恶二唑(BND)、或2,4,6-三苯氧基-1,3,5_三嗪(TRZ)。

[0015]较佳地,所述阳极层的材料为 ITO (In2O3: SnO2)、IZO (In2O3: ZnO) ,GITO(Ga0.08ln0.28Sn0.64O3)、或ZITO (Zn0.64ln0.ssSn0.66〇3)。

[0016]较佳地,所述阴极层的材料为Mg、Ag、Al、L1、K、Ca、MgxAg(I—X)、LixAl (1—x)、LixCa(i—x)、或LixAg (1—x) ο

[0017] 本发明的实施例还提供了一种有机电致发光器件的制作方法,所述方法包括:

[0018] 顺序地堆叠阳极层、空穴传输层、第一发光层、第二发光层、电子传输层以及阴极层;

[0019] 其中,所述第一发光层和第二发光层包括相同的基质,并且所述第一发光层和/或第二发光层被掺杂,使得所述第一发光层的空穴迀移率与所述第二发光层的电子迀移率相等。

[0020] 本发明的实施例使用同一种基质制作两个发光层,并使靠近阳极的发光层的空穴迀移率等于靠近阴极的发光层的电子迀移率;这样既能实现空穴和电子的平衡注入,又确保了两个发光层在物理性质上的匹配。本发明使用包括了相同基质的两个发光层,实现了空穴和电子的平衡注入,从而提高了有机电致发光器件的发光效率和寿命。

[0021] 较佳地,所述基质为4- (二氰乙烯基)-2-叔丁基-6- (I,I,7,7_四甲基久落尼定基_

4-乙烯基)-4Η-吡喃(DCJTB)、8-羟基喹啉铝(Alq3)、2,3,5,6_四氟_7,7 ’,8,8 ’ -四氰二甲基对苯醌(F4-TCNQ)、4,4-二 (2,2-二苯乙烯基)-1,1-联苯(DPVBi)、或6,6-二 (2- (1-芘基)~4~苯基喹啉)(BPYPQ)。

[0022] 较佳地,所述第一发光层由ρ型掺杂剂掺杂,所述ρ型掺杂剂为2,3,5,6_四氟-7,7 ’,8,8 ’ -四氰二甲基对苯醌(F4-TCNQ)、三(4-溴苯基)六氯锑酸铵(TBAHA)、或4,4 ’,4〃-三(N- (1-萘基)-N-苯基氨基)三苯胺(TNATA)。

[0023] 较佳地,所述第二发光层由η型掺杂剂掺杂,所述η型掺杂剂为8-羟基喹啉锂(Liq)、氟化锂(LiF)、三联吡啶铬(Cr (bpy) 3)、或三联吡啶钌(Ru (bpy) 3)。

[0024] 较佳地,所述空穴传输层的材料为N,N’_二(1-萘基)-N,N’_二苯基-1,I’-联苯_4_4’-二胺(NPB)、三苯基二胺衍生物(TPD)、N,N’-二(苯基)-N,N’-二 (4’-(N,N-二(苯基胺基)-4-联苯基)联苯胺(TPTE)、或I,3,5-三(N-3-甲基苯基-N-苯基氨基)苯(TDAB)。

[0025] 较佳地,所述电子传输层的材料为2- (4-联苯基)-5-苯基恶二唑(PBD)、2,5_二(1-萘基)-1,3,5_恶二唑(BND)、或2,4,6-三苯氧基-1,3,5_三嗪(TRZ)。

[0026]较佳地,所述阳极层的材料为 ITO (In2O3: SnO2)、IZO (In2O3: ZnO) ,GITO(Ga0.08ln0.28Sn0.64O3)、或ZITO (Zn0.64ln0.ssSn0.66〇3)。

[0027]较佳地,所述阴极层的材料为Mg、Ag、Al、L1、K、Ca、MgxAg(I—X)、LixAl (i—x)、LixCa(i—x)、或LixAg (I—x) ο

[0028] 本发明的实施例还提供了一种电子设备,所述电子设备包括如上所述的有机电致发光器件。

附图说明

[0029]图1示出了现有技术的有机电致发光器件的结构示意图;

[0030]图2示出了根据本发明实施例的有机电致发光器件的结构示意图;以及

[0031]图3示出了根据本发明实施例的有机电致发光器件的制作方法的流程图。

具体实施方式

[0032]下面结合附图,对本发明实施例提供的有机电致发光器件及其制造方法、电子设备的具体实施方式进行详细地说明。

[0033]附图中各膜层的形状和厚度不反映阵列基板的真实比例,目的只是示意说明本发明内容。

[0034]图2示出了根据本发明实施例的有机电致发光器件的结构示意图,其中所述有机电致发光器件包括:

[0035] 顺序地堆叠的阳极层、空穴传输层HTL、第一发光层EML 1、第二发光EML I1、电子传输层ETL以及阴极层;

[0036] 其中,所述第一发光层EML I和第二发光层EML II包括相同的基质,并且所述第一发光层EML I和/或第二发光层EML II被掺杂,使得所述第一发光层EML I的空穴迀移率与所述第二发光层EML II的电子迀移率相等。

[0037] 现有的发光材料基质通常为空穴传输型材料或电子传输型材料。本发明的实施例使用同一种基质制作两个发光层,并使靠近阳极的发光层的空穴迀移率等于靠近阴极的发光层的电子迀移率;这样既能实现空穴和电子的平衡注入,又确保了两个发光层在物理性质上的匹配。本发明使用包括了相同基质的两个发光层,实现了空穴和电子的平衡注入,从而提高了有机电致发光器件的发光效率和寿命。

[0038] 在本发明的实施例中,第一发光层EML I和第二发光层EML II使用相同的基质,并且第一发光层EML I和/或第二发光层EML II被掺杂。

[0039]具体地,如果发光层材料(S卩,所使用的基质)为电子传输型材料:则对第一发光层EML I进行ρ型掺杂来提高第一发光层EML I的空穴传输能力,并通过调整ρ型掺杂剂的浓度来控制其空穴传输能力;最终使得第一发光层EML I的空穴传输能力和第二发光层EML II的电子传输能力相同。如果发光层材料为空穴传输型材料:则对第二发光层EML II进行η型掺杂来提高第二发光层EML II的电子传输能力,并通过调整η型掺杂剂的浓度来控制其电子传输能力;最终使得第一发光层EML I的空穴传输能力和第二发光层EML II的电子传输能力相同。类似地,可以对第一发光层EML I和第二发光层EML II均进行掺杂,调整第一发光层EML I的空穴传输能力和第二发光层EML II的电子传输能力,并最终使得第一发光层EML I的空穴传输能力和第二发光层EML II的电子传输能力相同。

[°04°] 在具体实施时,可以使用诸如飞行时间法(time of flight, TOF)、空间电荷限制电流法(space charge limited current, SCLC)等方法对发光层的载流子迀移率(即,本发明实施例中的第一发光层EML I的空穴迀移率与所述第二发光层EML II的电子迀移率)进行测量,从而确定掺杂剂的浓度。

[0041] 较佳地,使用易于实现掺杂的材料作为基质,所述基质可以为4_( 二氰乙烯基)-2_叔丁基-6- (I,I,7,7-四甲基久落尼定基-4-乙烯基)-4H-吡喃(DCJTB)、8-羟基喹啉铝(Alq3)、2,3,5,6_四氟_7,7' ,8,8’_四氰二甲基对苯醌(F4-TCNQ)、4,4-二 (2,2-二苯乙烯基)-1,1-联苯(DPVBi)、或6,6-二 (2- (1-芘基)-4-苯基喹啉)(BPYPQ)。

[0042] 较佳地,当所述基质为电子传输型材料时,所述第一发光层由ρ型掺杂剂掺杂,所述P型掺杂剂可以为2,3,5,6-四氟-7,7 ’,8,8’_四氰二甲基对苯醌(F4-TCNQ)、三(4-溴苯基)六氯锑酸铵(TBAHA)、或4,4’,4〃_三(N- (1-萘基)-N-苯基氨基)三苯胺(TNATA)。本领域技术人员能够理解,当使用2,3,5,6-四氟-7,7 ’,8,8 ’ -四氰二甲基对苯醌(F4-TCNQ)作为基质时,可以使用除2,3,5,6_四氟-7,7’,8,8’_四氰二甲基对苯醌(F4-TCNQ)以外的其他掺杂剂进行掺杂。

[0043] 较佳地,当所述基质为空穴传输型材料时,所述第二发光层由η型掺杂剂掺杂,所述η型掺杂剂可以为8-羟基喹啉锂(Liq)、氟化锂(LiF)、三联吡啶铬(Cr (bpy) 3)、或三联吡啶•了 (Ru (bpy) 3) ο

[0044] 较佳地,使用空穴迀移率较高的材料制作空穴传输层,所述空穴传输层的材料可以为N ,N’-二(1-萘基)-N,N’_二苯基-1,I’-联苯-4-4’-二胺(NPB)、三苯基二胺衍生物(TPD)、N,N’ -二 (苯基)-N,N,-二 (4,- (N,N-二 (苯基胺基)-4-联苯基)联苯胺(TPTE)、或I,3,5-三(N-3-甲基苯基-N-苯基氨基)苯(TDAB)。

[0045] 较佳地,使用电子迀移率较高的材料制作空穴传输层,所述电子传输层的材料可以为2- (4-联苯基)-5-苯基恶二唑(PBD)、2,5-二(1-萘基)-1,3,5-恶二唑(BND)、或2,4,6-三苯氧基-1,3,5-三嗪(TRZ)。

[0046] 较佳地,当所述有机电致发光器件为顶发射器件时,使用反射性材料制作阳极层;当所述有机电致发光器件为底发射器件时,使用透明的材料制作阳极层;所述阳极层的材料可以为 ITO(In2O3 = SnO2)、IZO (In2O3: ZnO)、GIT0 (Ga0.08ln0.28Sn0.64O3)、或 ZITO(Zn0.64ln0.ssSn0.66Ο3)。

[0047] 较佳地,当所述有机电致发光器件为顶发射器件时,使用透明的材料制作阴极层;当所述有机电致发光器件为底发射器件时,使用反射性材料制作阴极层;所述阴极层的材料可以为1区、八区、八1、1^、1(、0&、]\^^区(1—\)、LixAl (1—X)、LixCa(i—x)、或LixAg(i—x)。

[0048] 本发明的实施例还提供了一种有机电致发光器件的制作方法,所述方法包括:

[0049] 顺序地堆叠阳极层、空穴传输层、第一发光层、第二发光层、电子传输层以及阴极层;

[0050] 其中,所述第一发光层和第二发光层包括相同的基质,并且所述第一发光层和/或第二发光层被掺杂,使得所述第一发光层的空穴迀移率与所述第二发光层的电子迀移率相等。

[0051] 本发明的实施例使用同一种基质制作两个发光层,并使靠近阳极的发光层的空穴迀移率等于靠近阴极的发光层的电子迀移率;这样既能实现空穴和电子的平衡注入,又确保了两个发光层在物理性质上的匹配。本发明使用包括了相同基质的两个发光层,实现了空穴和电子的平衡注入,从而提高了有机电致发光器件的发光效率和寿命。

[0052] 较佳地,使用易于实现掺杂的材料作为基质,所述基质可以为4_( 二氰乙烯基)-2_叔丁基-6- (I,I,7,7-四甲基久落尼定基-4-乙烯基)-4H-吡喃(DCJTB)、8-羟基喹啉铝(Alq3)、2,3,5,6_四氟_7,7' ,8,8’_四氰二甲基对苯醌(F4-TCNQ)、4,4-二 (2,2-二苯乙烯基)-1,1-联苯(DPVBi)、或6,6-二 (2- (1-芘基)-4-苯基喹啉)(BPYPQ)。

[0053] 较佳地,当所述基质为电子传输型材料时,所述第一发光层由ρ型掺杂剂掺杂,所述P型掺杂剂可以为2,3,5,6-四氟-7,7 ’,8,8’_四氰二甲基对苯醌(F4-TCNQ)、三(4-溴苯基)六氯锑酸铵(TBAHA)、或4,4’,4〃_三(N- (1-萘基)-N-苯基氨基)三苯胺(TNATA)。本领域技术人员能够理解,当使用2,3,5,6-四氟-7,7 ’,8,8 ’ -四氰二甲基对苯醌(F4-TCNQ)作为基质时,可以使用除2,3,5,6_四氟-7,7’,8,8’_四氰二甲基对苯醌(F4-TCNQ)以外的其他掺杂剂进行掺杂。

[0054] 较佳地,当所述基质为空穴传输型材料时,所述第二发光层由η型掺杂剂掺杂,所述η型掺杂剂可以为8-羟基喹啉锂(Liq)、氟化锂(LiF)、三联吡啶铬(Cr (bpy) 3)、或三联吡啶•了 (Ru (bpy) 3) ο

[0055] 较佳地,使用空穴迀移率较高的材料制作空穴传输层,所述空穴传输层的材料可以为N ,N’-二(1-萘基)-N,N’_二苯基-1,I’-联苯-4-4’-二胺(NPB)、三苯基二胺衍生物(TPD)、N,N’ -二 (苯基)-N,N,-二 (4,- (N,N-二 (苯基胺基)-4-联苯基)联苯胺(TPTE)、或I,3,5-三(N-3-甲基苯基-N-苯基氨基)苯(TDAB)。

[0056] 较佳地,使用电子迀移率较高的材料制作空穴传输层,所述电子传输层的材料可以为2- (4-联苯基)-5-苯基恶二唑(PBD)、2,5-二(1-萘基)-1,3,5-恶二唑(BND)、或2,4,6-三苯氧基-1,3,5-三嗪(TRZ)。

[0057] 较佳地,当所述有机电致发光器件为顶发射器件时,使用反射性材料制作阳极层;当所述有机电致发光器件为底发射器件时,使用透明的材料制作阳极层;所述阳极层的材料可以为 ITO(In2O3 = SnO2)、IZO (In2O3: ZnO)、GIT0 (Ga0.08ln0.28Sn0.64O3)、或 ZITO(Zn0.64ln0.ssSn0.66Ο3)。

[0058] 较佳地,当所述有机电致发光器件为顶发射器件时,使用透明的材料制作阴极层;当所述有机电致发光器件为底发射器件时,使用反射性材料制作阴极层;所述阴极层的材料可以为1区、八区、八1、1^、1(、0&、]\^^区(1—\)、LixAl (1—X)、LixCa(i—x)、或LixAg(i—x)。

[0059]图3示出了根据本发明实施例的有机电致发光器件的制作方法的流程图。应当注意,图3中示出的流程图包括了有机电致发光器件的制作方法的以下两个实例。

[0060] 实例一

[0061] I)在基板上溅射阳极导电薄膜;当所述有机电致发光器件为顶发射器件时,使用反射性材料制作阳极层;当所述有机电致发光器件为底发射器件时,使用透明的材料制作阳极层;所述阳极层的材料可以为ITO (In2O3: SnO2)、IZO (In2O3: ZnO)、GIT0(Ga0.08ln0.28Sn0.64O3)、或ZITO (Zn0.64In0.88Sn0.66O3)等导电薄膜;

[0062] 2)在完成阳极导电薄膜制备后,采用真空蒸镀工艺制备空穴传输层(HTL);较佳地,使用空穴迀移率较高的材料制作空穴传输层,所述空穴传输层的材料可以为N,N’_二(1-萘基)-N,N'-二苯基-1,I ’-联苯-4-4 ’-二胺(NPB)、三苯基二胺衍生物(TPD)、N,N’-二(苯基)-N,N ’ -二 (4 ’ - (N,N-二(苯基胺基)-4-联苯基)联苯胺(TPTE)、或I,3,5-三(N-3-甲基苯基-N-苯基氨基)苯(TDAB)等;

[0063] 3)采用真空蒸镀工艺制备EMLI,同时对EMLI进行P型掺杂;当所述基质为电子传输型材料时,所述第一发光层由P型掺杂剂掺杂,所述P型掺杂剂可以为2,3,5,6-四氟-7,7 ’,8,8 ’ -四氰二甲基对苯醌(F4-TCNQ)、三(4-溴苯基)六氯锑酸铵(TBAHA)、或4,4 ’,4〃-三(N- (1-萘基)-N-苯基氨基)三苯胺(TNATA)等;

[0064] 4)采用真空蒸镀工艺制备EMLII,其EMLII发光层与EMLI未进行ρ掺杂的发光材料相同;

[0065] 5)在完成发光层的制备后,通过真空蒸镀工艺制备电子传输层(ETL);较佳地,使用电子迀移率较高的材料制作空穴传输层,所述电子传输层的材料可以为2-(4-联苯基)_

5-苯基恶二唑(PBD)、2,5-二 (1-萘基)-1,3,5-恶二唑(BND)、或2,4,6-三苯氧基-1,3,5-三嗪(TRZ)等;

[0066] 6)在完成上述步骤5)后,采用真空蒸镀工艺蒸镀阴极层;较佳地,当所述有机电致发光器件为顶发射器件时,使用透明的材料制作阴极层;当所述有机电致发光器件为底发射器件时,使用反射性材料制作阴极层;所述阴极层的材料可以为Mg、Ag、Al、L1、K、Ca、MgxAg (1—X)、LixAl (1—X)、LixCa (1—x)、或LixAg (ι—x)等。

[0067]实例二

[0068] I)在基板上溅射阳极导电薄膜;当所述有机电致发光器件为顶发射器件时,使用反射性材料制作阳极层;当所述有机电致发光器件为底发射器件时,使用透明的材料制作阳极层;所述阳极层的材料可以为ITO (In2O3: SnO2)、IZO (In2O3: ZnO)、GIT0(Ga0.08ln0.28Sn0.64O3)、或ZITO (Zn0.64In0.88Sn0.66O3)等导电薄膜;

[0069] 2)在完成阳极导电薄膜制备后,采用真空蒸镀工艺制备空穴传输层(HTL);较佳地,使用空穴迀移率较高的材料制作空穴传输层,所述空穴传输层的材料可以为N,N’_二(1-萘基)-N,N'-二苯基-1,I ’-联苯-4-4 ’-二胺(NPB)、三苯基二胺衍生物(TPD)、N,N’-二(苯基)-N,N ’ -二 (4 ’ - (N,N-二(苯基胺基)-4-联苯基)联苯胺(TPTE)、或I,3,5-三(N-3-甲基苯基-N-苯基氨基)苯(TDAB)等;

[0070] 3)采用真空蒸镀工艺制备EMLI,其EMLI发光层与EMLII未进行η掺杂的发光材料相同;

[0071] 4)采用真空蒸镀工艺制备EMLII,,同时对EMLII进行η型掺杂,η型掺杂剂主要为具有低功函数的有机材料,优选的η型掺杂剂有8-羟基喹啉锂(Liq)、氟化锂(LiF)、三联吡啶络(Cr (bpy) 3)、三联P比啶舒(Ru (bpy) 3)等;

[0072] 5)在完成发光层的制备后,通过真空蒸镀工艺制备电子传输层(ETL);较佳地,使用电子迀移率较高的材料制作空穴传输层,所述电子传输层的材料可以为2-(4-联苯基)_5-苯基恶二唑(PBD)、2,5-二 (1-萘基)-1,3,5-恶二唑(BND)、或2,4,6-三苯氧基-1,3,5-三嗪(TRZ)等;

[0073] 6)在完成上述步骤5后,采用真空蒸镀工艺蒸镀阴极层;较佳地,当所述有机电致发光器件为顶发射器件时,使用透明的材料制作阴极层;当所述有机电致发光器件为底发射器件时,使用反射性材料制作阴极层;所述阴极层的材料可以为1838 31、1^、1(、〇&、MgxAg (ι—X)、LixAl (ι—X)、LixCa (ι—x)、或LixAg (ι—x)等。

[0074] 基于同一发明构思,本发明实施例还提供了一种电子设备,包括本发明实施例提供的上述有机电致发光器件,该电子设备可以为:照明设备、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有照明或显示功能的产品或部件。该电子设备的实施可以参见上述有机电致发光器件的实施例,重复之处不再赘述。

[0075] 现有的发光材料基质通常为空穴传输型材料或电子传输型材料。本发明的实施例使用同一种基质制作两个发光层,并使靠近阳极的发光层的空穴迀移率等于靠近阴极的发光层的电子迀移率;这样既能实现空穴和电子的平衡注入,又确保了两个发光层在物理性质上的匹配。本发明使用包括了相同基质的两个发光层,实现了空穴和电子的平衡注入,从而提高了有机电致发光器件的发光效率和寿命。

[0076]显然,本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样,倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内,则本发明也意图包含这些改动和变型在内。

Claims (15)

1.一种有机电致发光器件,其特征在于,包括: 顺序地堆叠的阳极层、空穴传输层、第一发光层、第二发光层、电子传输层以及阴极层; 其中,所述第一发光层和第二发光层包括相同的基质,并且所述第一发光层和/或第二发光层被掺杂,使得所述第一发光层的空穴迀移率与所述第二发光层的电子迀移率相等; 所述第一发光层由P型掺杂剂掺杂,所述P型掺杂剂为2,3,5,6_四氟-7,7’,8,8’_四氰二甲基对苯醌(F4-TCNQ)、三(4-溴苯基)六氯锑酸铵(TBAHA)、或4,4’,4〃_三(N- (1-萘基)-N-苯基氨基)三苯胺(TNATA); 所述第二发光层由η型掺杂剂掺杂,所述η型掺杂剂为8-羟基喹啉锂(Liq)、氟化锂(LiF)、三联吡啶铬(Cr (bpy) 3)、或三联吡啶钌(Ru (bpy) 3)。
2.如权利要求1所述的有机电致发光器件,其特征在于,所述基质为4- (二氰乙烯基)-2-叔丁基-6- (I,I,7,7-四甲基久落尼定基-4-乙烯基)-4H-吡喃(DCJTB)、8-羟基喹啉铝(Alq3)、2,3,5,6_四氟_7,7' ,8,8’_四氰二甲基对苯醌(F4-TCNQ)、4,4-二 (2,2-二苯乙烯基)-1,1-联苯(DPVBi)、或6,6-二 (2- (1-芘基)-4-苯基喹啉)(BPYPQ)。
3.如权利要求1所述的有机电致发光器件,其特征在于,所述空穴传输层的材料为N,N'-二(1-萘基)-W-二苯基-1,I c联苯-4-4L二胺(NPB)、三苯基二胺衍生物(TPD)、N,N'-二 (苯基)-N,N'-二 (4L (N,N-二 (苯基胺基)-4-联苯基)联苯胺(TPTE)、或I,3,5_三(N-3-甲基苯基-N-苯基氨基)苯(TDAB)。
4.如权利要求1所述的有机电致发光器件,其特征在于,所述电子传输层的材料为2-(4-联苯基)-5-苯基恶二唑(PBD)、2,5-二(1-萘基)-1,3,5-恶二唑(BND)、或2,4,6-三苯氧基-1,3,5-三嗪(TRZ) ο
5.如权利要求1所述的有机电致发光器件,其特征在于,所述阳极层的材料为ITO(In203:Sn02)、ΙΖ0 (Ιη2θ3: ZnO)、GIT0 (Ga0.08ln0.2sSn0.64O3)、或ZITO (Zn0.64ln0.ssSn0.66Ο3)。
6.如权利要求1所述的有机电致发光器件,其特征在于,所述阴极层的材料为Mg、Ag、Al、L1、K、Ca、MgxAg(i—X)、LixAl (1—x)、LixCa(i—x)、或LixAg(i—x)。
7.一种有机电致发光器件的制作方法,其特征在于,所述方法包括: 顺序地堆叠阳极层、空穴传输层、第一发光层、第二发光层、电子传输层以及阴极层; 其中,所述第一发光层和第二发光层包括相同的基质,并且所述第一发光层和/或第二发光层被掺杂,使得所述第一发光层的空穴迀移率与所述第二发光层的电子迀移率相等。
8.如权利要求7所述的方法,其特征在于,所述基质为4-(二氰乙烯基)-2-叔丁基-6-(1,I,7,7-四甲基久落尼定基-4-乙烯基)-4H-吡喃(DCJTB)、8_羟基喹啉铝(Alq3) ,2,3,5,6-四氟-7 ,7' ,8,8 ’ -四氰二甲基对苯醌(F4-TCNQ)、4,4-二(2,2-二苯乙烯基)-1,1-联苯(DPVBi)、或6,6-二 (2-(1-芘基)-4-苯基喹啉)(BPYPQ)。
9.如权利要求7所述的方法,其特征在于,所述第一发光层由ρ型掺杂剂掺杂,所述ρ型掺杂剂为2,3,5,6-四氟-7,7’,8,8’-四氰二甲基对苯醌(F4-TCNQ)、三(4-溴苯基)六氯锑酸铵(TBAHA)、或4,4’,4〃_三(N- (1-萘基)-N-苯基氨基)三苯胺(TNATA)。
10.如权利要求7所述的方法,其特征在于,所述第二发光层由η型掺杂剂掺杂,所述η型掺杂剂为8-羟基喹啉锂(Liq)、氟化锂(LiF)、三联吡啶铬(Cr (bpy) 3)、或三联吡啶钌(Ru(bpy) 3) ο
11.如权利要求7所述的方法,其特征在于,所述空穴传输层的材料为N,N。二(1-萘基)-N,N^二苯基-1,I c联苯-4-4L二胺(NP©、三苯基二胺衍生物(TPD)、^_二 (苯基)-W-二 (V - (N,N-二(苯基胺基)-4-联苯基)联苯胺(TPTE)、或I,3,5-三(N-3-甲基苯基-N-苯基氨基)苯(TDAB)。
12.如权利要求7所述的方法,其特征在于,所述电子传输层的材料为2-(4-联苯基)-5-苯基恶二唑(PBD)、2,5-二 (1-萘基)-1,3,5-恶二唑(BND)、或2,4,6-三苯氧基-1,3,5-三嗪(TRZ) ο
13.如权利要求7所述的方法,其特征在于,所述阳极层的材料为ITO (In2O3: SnO2)、IZO(Ιη2θ3: ZnO)、GIT0 (Ga0.08ln0.28Sn0.64O3)、或ZITO (Zn0.64ln0.ssSn0.66Ο3)。
14.如权利要求7所述的方法,其特征在于,所述阴极层的材料为Mg、Ag、Al、L1、K、Ca、MgxAg(i—x)、LixAl (1-X)、LixCa (I—X)、I^LixAg (ι—χ)。
15.—种电子设备,其特征在于,所述电子设备包括如权利要求1-6之一所述的有机电致发光器件。
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Families Citing this family (4)

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Publication number Priority date Publication date Assignee Title
CN104795507B (zh) * 2015-04-16 2017-03-22 京东方科技集团股份有限公司 有机电致发光器件及其制造方法、电子设备
KR20170047636A (ko) 2015-10-23 2017-05-08 엘지디스플레이 주식회사 유기발광 표시장치
CN105895819B (zh) * 2016-04-28 2018-07-06 京东方科技集团股份有限公司 种oled器件及其制备方法、oled显示面板
CN106856225A (zh) 2016-12-15 2017-06-16 上海天马有机发光显示技术有限公司 一种有机发光显示面板及装置

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG2009086778A (en) * 2000-12-28 2016-11-29 Semiconductor Energy Lab Co Ltd Luminescent device
JP3728309B2 (ja) * 2003-09-30 2005-12-21 三洋電機株式会社 有機エレクトロルミネッセント素子及び有機エレクトロルミネッセント素子用有機化合物
JP2005276583A (ja) * 2004-03-24 2005-10-06 Idemitsu Kosan Co Ltd 有機エレクトロルミネッセンス素子及び表示装置
CN100482024C (zh) * 2004-05-20 2009-04-22 株式会社半导体能源研究所 发光元件及发光装置
US20060194077A1 (en) * 2005-02-28 2006-08-31 Fuji Photo Film Co., Ltd. Organic light emitting diode and display using the same
CN1822409A (zh) * 2006-01-10 2006-08-23 陕西科技大学 一种无机盐掺杂型有机电致发光显示器件
US8112324B2 (en) 2006-03-03 2012-02-07 Amazon Technologies, Inc. Collaborative structured tagging for item encyclopedias
JP4702145B2 (ja) 2006-03-31 2011-06-15 株式会社豊田自動織機 斜板式圧縮機
JP5149497B2 (ja) 2006-08-28 2013-02-20 パナソニック株式会社 有機発光素子
ES2624694T3 (es) 2007-03-20 2017-07-17 Toray Industries, Inc. Material de moldeo, preimpregnado, material compuesto reforzado con fibras y proceso para la producción de un material de base de moldeo reforzado con fibras
KR20080106130A (ko) * 2007-05-30 2008-12-04 제일모직주식회사 유기 광전 소자 및 이에 사용되는 재료
CN101394696A (zh) * 2007-09-20 2009-03-25 清华大学;北京维信诺科技有限公司;昆山维信诺显示技术有限公司 有机电致发光器件
GB2456298A (en) * 2008-01-07 2009-07-15 Anthony Ian Newman Electroluminescent materials comprising oxidation resistant fluorenes
CN100484353C (zh) * 2008-01-29 2009-04-29 清华大学;北京维信诺科技有限公司;昆山维信诺显示技术有限公司 有机电致发光器件
CN101562232B (zh) 2009-05-25 2012-05-23 中国科学院长春应用化学研究所 一种颜色可调有机电致发光器件及其制备方法
GB0917083D0 (en) * 2009-09-30 2009-11-11 Lomox Ltd Electroluminescent materials
CN102074660A (zh) 2010-12-01 2011-05-25 郑州大学 一种顶发射有机电致发光器件
US9299942B2 (en) * 2012-03-30 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, display device, electronic appliance, and lighting device
CN102651454B (zh) * 2012-04-25 2015-02-11 京东方科技集团股份有限公司 一种电致发光器件、显示装置和电致发光器件制备方法
CN102969459A (zh) 2012-10-23 2013-03-13 上海大学 有机电致发光器件及其制备方法
KR20140083412A (ko) * 2012-12-26 2014-07-04 엘지디스플레이 주식회사 적색 인광 호스트 물질 및 이를 이용한 유기전계발광소자
KR20140083413A (ko) * 2012-12-26 2014-07-04 엘지디스플레이 주식회사 적색 인광 화합물 및 이를 이용한 유기전계발광소자
CN103050634B (zh) 2013-01-07 2015-04-22 陕西科技大学 一种高电子注入效率有机电致发光器件及其制备方法
TW201521222A (en) * 2013-10-16 2015-06-01 Semiconductor Energy Lab Light-emitting element, light-emitting device, electronic device, and lighting device
JP6435626B2 (ja) * 2014-04-04 2018-12-12 セイコーエプソン株式会社 発光素子、発光装置、表示装置および電子機器
JP6432149B2 (ja) * 2014-04-04 2018-12-05 セイコーエプソン株式会社 発光素子、発光装置、表示装置および電子機器
KR20160069625A (ko) * 2014-12-08 2016-06-17 엘지디스플레이 주식회사 유기전계발광소자
CN104795507B (zh) * 2015-04-16 2017-03-22 京东方科技集团股份有限公司 有机电致发光器件及其制造方法、电子设备

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