CN1047420A - A kind of monocrystalline-silicon pressure transducer manufacture method and structure thereof - Google Patents

A kind of monocrystalline-silicon pressure transducer manufacture method and structure thereof Download PDF

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Publication number
CN1047420A
CN1047420A CN 89103289 CN89103289A CN1047420A CN 1047420 A CN1047420 A CN 1047420A CN 89103289 CN89103289 CN 89103289 CN 89103289 A CN89103289 A CN 89103289A CN 1047420 A CN1047420 A CN 1047420A
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China
Prior art keywords
silicon
pressure
monocrystalline
cavity
floor
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Withdrawn
Application number
CN 89103289
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Chinese (zh)
Inventor
李志坚
罗跃林
郑心畬
刘理天
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Tsinghua University
Qinghua University
QINGHUA UNIV
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Tsinghua University
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Priority to CN 89103289 priority Critical patent/CN1047420A/en
Publication of CN1047420A publication Critical patent/CN1047420A/en
Withdrawn legal-status Critical Current

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Abstract

The present invention relates to the manufacture method and the structure thereof of monocrystalline-silicon pressure transducer.The invention provides a kind of new method of monocrystalline-silicon pressure transducer single-sided process and the box structure of monocrystalline silicon absolute pressure transducer.The present invention has that manufacturing process is simple, rate of finished products is high, cost is low, with advantages such as ic process compatibility are good

Description

A kind of monocrystalline-silicon pressure transducer manufacture method and structure thereof
The present invention relates to a kind of manufacture method and the structure of monocrystalline-silicon pressure transducer.
Monocrystalline-silicon pressure transducer is widely used in many key areas of national economy, national defense construction as the measurement means of various mechanical quantities such as pressure, power, flow, flow velocity and acceleration, because it has unique integrated advantage, so along with the appearance of rapid development of computer and system integration technology, its range of application is more and more wider.Therefore, the research of the manufacture method of monocrystalline-silicon pressure transducer and structure thereof is paid close attention to by those skilled in the art.Making the most frequently used method of monocrystalline-silicon pressure transducer at present is to utilize two-sided process technology; corrode by the back side and to obtain pressure sensitive film; accompanying drawing 1 has provided technological process and the structure thereof that this method is made monocrystalline-silicon pressure transducer: the N type epitaxial loayer of epitaxial growth one deck desired thickness on original P type (100) the face silicon chip of Fig. 1 (a) at first; form Fig. 1 (b); utilize common process on the epitaxial wafer of Fig. 1 (b), to prepare pressure cell such as Fig. 1 (c) then; carve etch pit at the silicon chip back side that is shaped on Fig. 1 of pressure cell (c) and with its front protecting by dual surface lithography; utilize the place that the electrochemical corrosion technology will be carved with etch pit to corrode to epitaxial loayer; form pressure sensitive film such as Fig. 1 (d); silicon chip with Fig. 1 (d) is divided into chip at last; utilize the electrostatic sealing-in technology that single chip and Pyrex are sealed shown in Fig. 1 (e); again with the Chip Packaging of Fig. 1 (e) in shell; promptly finished the manufacturing of monocrystalline-silicon pressure transducer; its tube core structure is shown in Fig. 1 (e), and the weak point of this manufacture method and structure thereof is:
1. need two-sided processing, be difficult to accurately control the accuracy of alignment of pressure cell and pressure chamber, accuracy of alignment not only is subjected to the influence of double face photoetching machine, also is subjected to the influence of electrochemical corrosion, and the performance that can influence front pressure cell and integrated circuit is again corroded at the back side for a long time simultaneously.This manufacture method is difficult to make miniature pressure cell, because back side corrosion has accounted for area, makes the silicon chip utilance low, also needs the static sealing by fusing for improving temperature characterisitic, and technology is very complicated;
2. this manufacture method is difficult to make integrated pressure sensor and high-density pressure sensor array, and is poor with ic process compatibility;
3. because the complex process rate of finished products is low, adding needs twin polishing sheet or twin polishing epitaxial wafer, makes its cost height.
The objective of the invention is to make the method for monocrystalline-silicon pressure transducer and the box structure of monocrystalline silicon absolute pressure transducer and proposed a kind of single-sided process in order to overcome the deficiency of above-mentioned pressure sensor manufacture method and structure thereof.
Technical essential of the present invention is:
1. the invention provides a kind of single-sided process and make the manufacture method of monocrystalline-silicon pressure transducer, its manufacture process is at first to produce at least one cavity on lower floor's silicon, then another upper strata silicon and lower floor's silicon are sealed, then attenuate upper strata silicon is to desired thickness, so on lower floor's silicon cavity, obtained the thin Silicon pressure sensitive membrane of one deck, formed box structure, utilize common process on the Silicon pressure sensitive membrane, to make pressure cell at last, after the scribing encapsulation, promptly finished the manufacturing of monocrystalline silicon absolute pressure transducer or sensor array, also can be when lower floor's silicon produces cavity, make cavity penetrate whole lower floor silicon, make the monocrystalline silicon differential pressure pick-up or have the absolute pressure transducer in external reference chamber.
Can also manufacture treatment circuit on the silicon face outside reference cavity, make integrated pressure sensor.
2. the present invention proposes a kind of silicon box structure monocrystalline silicon absolute pressure transducer, it is characterized in that the pressure reference cavity in silicon chip, behind the formation pressure reference cavity, the shape of silicon chip and processing characteristics and original silicon chip are as broad as long.
Advantage of the present invention is:
1. only need single-sided process, eliminated the principal element that influences accuracy of alignment in the above-mentioned technology, improved machining accuracy, guaranteed the consistency of parameter.Needn't corrosion of silicon after making because of pressure cell, eliminated the damage and the influence that bring thus, improved the silicon chip utilance, be easy to manufacture miniature pressure cell, the splash coefficient that expands of the heat of silicon and silicon is in full accord, so without the static sealing by fusing;
2. this method is made integrated single-crystal silicon pressure sensor and array of pressure sensors easily, and is good with ic process compatibility;
3. because manufacture method is simple, be easy to realize, full wafer processing efficient height, finished product rate height only needs the single-sided polishing sheet, and cost is reduced.
Embodiment:
Accompanying drawing 2 is embodiments of the invention: single-sided process is made monocrystalline silicon absolute pressure transducer technological process and silicon box structure.At first the lower floor's silicon with Fig. 2 (a) (100) face adopts anisotropic corrosion technique to lose the cavity of one 800 μ m * 800 μ m, to have the lower floor's silicon of Fig. 2 (b) of cavity and the N type upper strata silicon that another (100) surface resistivity is 2~4 Ω cm then, the employing silicon direct bonding technology is bonded together, then the silicon chip of Fig. 2 (c) that bonding is good is with grinding, the throwing technology is thinned to 50 μ m with upper strata silicon, use common process to manufacture the electric bridge of forming by piezo-resistance again at the 10 μ m places, edge, chamber of Fig. 2 (d), to do the wafer dicing encapsulation of pressure cell Fig. 2 (e) at last, promptly finish the making of monocrystalline silicon absolute pressure transducer.The silicon box structure that contains pressure cell is shown in Fig. 2 (e).
In addition, after forming the pressure reference cavity, when utilizing the common process making to form electric bridge by piezo-resistance, the silicon face beyond reference cavity is made CMOS high-performance amplifier, makes the integrated pressure sensor that contains amplifying circuit on the sheet.
Adopt this method also to can be made into differential pressure, the dual-purpose transducer of absolute pressure, only need when lower floor's silicon produces cavity cavity is penetrated whole lower floor silicon, utilize static sealing by fusing technology to seal silicon chip and Pyrex again and get final product, its structure as shown in Figure 3.
Description of drawings:
The technological process and the structure chart thereof of accompanying drawing 1 two-sided processing monocrystalline-silicon pressure transducer
The technological process of accompanying drawing 2 single-sided process monocrystalline silicon absolute pressure transducers and silicon box structure chart
The monocrystalline silicon differential pressure of accompanying drawing 3 single-sided process, absolute pressure synthesis sensor structure chart

Claims (4)

1, a kind of method for production of single-sided process monocrystalline-silicon pressure transducer, it is characterized in that at first on lower floor's silicon, producing at least one cavity, then another upper strata silicon and lower floor's silicon are sealed and attenuate upper strata silicon to desired thickness, on lower floor's silicon cavity, obtain the Silicon pressure sensitive membrane, form silicon box structure, utilize common process to manufacture pressure cell again on the Silicon pressure sensitive membrane, monocrystalline silicon absolute pressure transducer or sensor array are made in last scribing encapsulation.
2, according to the method for production of the said single-sided process monocrystalline-silicon pressure transducer of claim 1, also can when lower floor's silicon produces cavity, make cavity penetrate whole lower floor silicon, make differential pressure, the dual-purpose transducer of absolute pressure.
3, according to claim 1, the method for production of 2 said single-sided process monocrystalline-silicon pressure transducers can adopt common process to manufacture treatment circuit on the silicon face outside reference cavity, makes integrated pressure sensor.
4, a kind of silicon box structure monocrystalline silicon absolute pressure transducer is characterized in that the pressure reference cavity is sandwiched in the wafer bulk, and the shape of silicon chip and processing characteristics and original silicon chip are as broad as long behind the formation pressure reference cavity.
CN 89103289 1989-05-18 1989-05-18 A kind of monocrystalline-silicon pressure transducer manufacture method and structure thereof Withdrawn CN1047420A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 89103289 CN1047420A (en) 1989-05-18 1989-05-18 A kind of monocrystalline-silicon pressure transducer manufacture method and structure thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 89103289 CN1047420A (en) 1989-05-18 1989-05-18 A kind of monocrystalline-silicon pressure transducer manufacture method and structure thereof

Publications (1)

Publication Number Publication Date
CN1047420A true CN1047420A (en) 1990-11-28

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CN 89103289 Withdrawn CN1047420A (en) 1989-05-18 1989-05-18 A kind of monocrystalline-silicon pressure transducer manufacture method and structure thereof

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100449289C (en) * 2003-06-18 2009-01-07 霍尼韦尔国际公司 Pressure sensor apparatus and method
CN100449815C (en) * 2003-07-11 2009-01-07 友达光电股份有限公司 Semiconductor pressure sensor
CN104165715A (en) * 2013-05-17 2014-11-26 上海芯敏微系统技术有限公司 Pressure transducer manufacturing method and pressure transducer structure
CN105928587A (en) * 2016-06-25 2016-09-07 苏州赛智达智能科技有限公司 High-precision digital liquid level meter

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100449289C (en) * 2003-06-18 2009-01-07 霍尼韦尔国际公司 Pressure sensor apparatus and method
CN100449815C (en) * 2003-07-11 2009-01-07 友达光电股份有限公司 Semiconductor pressure sensor
CN104165715A (en) * 2013-05-17 2014-11-26 上海芯敏微系统技术有限公司 Pressure transducer manufacturing method and pressure transducer structure
CN104165715B (en) * 2013-05-17 2016-08-03 上海芯敏微系统技术有限公司 A kind of pressure transducer manufacture method and structure thereof
CN105928587A (en) * 2016-06-25 2016-09-07 苏州赛智达智能科技有限公司 High-precision digital liquid level meter

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