CN104681662A - 一种高反射率太阳能薄膜的制备方法 - Google Patents

一种高反射率太阳能薄膜的制备方法 Download PDF

Info

Publication number
CN104681662A
CN104681662A CN201310630482.4A CN201310630482A CN104681662A CN 104681662 A CN104681662 A CN 104681662A CN 201310630482 A CN201310630482 A CN 201310630482A CN 104681662 A CN104681662 A CN 104681662A
Authority
CN
China
Prior art keywords
film
reflectivity
preparation
thickness
solar energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201310630482.4A
Other languages
English (en)
Inventor
谭秀航
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qingdao Thing Hundred Praises Electronic Science And Technology Co Ltd
Original Assignee
Qingdao Thing Hundred Praises Electronic Science And Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qingdao Thing Hundred Praises Electronic Science And Technology Co Ltd filed Critical Qingdao Thing Hundred Praises Electronic Science And Technology Co Ltd
Priority to CN201310630482.4A priority Critical patent/CN104681662A/zh
Publication of CN104681662A publication Critical patent/CN104681662A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876—Particular processes or apparatus for batch treatment of the devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02697—Forming conducting materials on a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

本发明提供了一种高反射率太阳能薄膜的制备方法，其技术方案是：采用直流磁控溅射法在玻璃基材上制备纳米Ag薄膜，并采用射频磁控溅射法在其上镀一层SiO2薄膜作为保护层。测试结果表明，薄膜的反射率曲线呈周期性变化，当银膜的厚度为130nm和二氧化硅的为320nm时，膜反射率最高，太阳光和可见光反射率分别为96.66%和98.84%，并且膜材的耐磨性和抗老化性良好。

Description

一种高反射率太阳能薄膜的制备方法
技术领域
本发明提供了一种高反射率太阳能薄膜的制备方法，特别是一种太阳能反射材料的制备。
背景技术
随着世界范围内能源的短缺和环境问题的加剧，以太阳能为主的可再生能源的研究、开发和利用日益得到重视。太阳能发电主要有太阳能光热发电和太阳能光伏发电两种方式。对于太阳能热发电系统，其核心设备包括聚光集热装置、反射镜传动和跟踪系统；其中聚光系统包括定日镜群和跟踪装置，成本占总投入的 50%以上。聚光系统中的反射材料在太阳能中高温应用系统以及聚光光伏系统中有着广泛的应用，它的好坏直接决定了太阳能光伏电池的转换效率与热发电的成本。高反射率的材料是提高上述过程太阳能利用率的关键。
为了制备一种高反射率太阳能薄膜，本发明公开了一种高反射率太阳能薄膜的制备方法，该薄膜对太阳光和可见光的反射率分别为 96.66%和 98.84%，并且膜材的耐磨性和抗老化性良好。
发明内容
本发明的目的就是针对现有技术存在的缺陷，提供一种高反射率太阳能薄膜的制备方法。
其技术方案是：采用直流磁控溅射法在玻璃基材上制备纳米 Ag 薄膜，并采用射频磁控溅射法在其上镀一层 SiO2薄膜作为保护层。其特征是：银膜的厚度为 130 nm ，二氧化硅薄膜的厚度为 320 nm 。
本发明的特点是反射率高，对太阳光和可见光的反射率分别为 96.66%和 98.84%，并且膜材的耐磨性和抗老化性良好。
具体实施方式
Ag 薄膜的制备：采用中国科学院沈阳科学仪器研制中心有限公司制造的 JGP-450A 型磁控溅射沉积系统，所用 Ag 靶尺寸为 Ф60×5 mm，纯度为 99.99%，溅射气体为高纯氩（99.999%），本底真空度为 6.1×10-4Pa，工作压力设为 0.7 Pa，靶基距固定在 75 mm，Ar 的流量为 22 sccm；Ag 的溅射功率是 40 W，其中溅射电压为 0.35 KV，电流为 0.12 A；溅射速率测得约为 64.4 nm/min。溅射前先对靶材进行 5 min 的预溅射，以除去靶表面残留的氧化物和其它污染物。
SiO2薄膜的制备：SiO2薄膜采用射频磁控溅射法制备，SiO2靶材尺寸为Ф60×5 mm，纯度为99.99%，溅射气体为高纯氩（99.999%），本底真空度为 6.1×10-4Pa，工作压力设为 0.7 Pa，靶基距固定在 75 mm，Ar 的流量为 22 sccm；SiO2的溅射功率是 280 W，其中入射功率为300 W，反射功率为 20 W，板电压为 1.12 KV，板电流为 0.32 mA。整个镀膜过程由计算机控制完成。溅射速率测得是 9.1 nm/min。溅射前先对靶材进行 10 min 的预溅射，以除去靶表面残留的氧化物和其它污染物。制备的样品表面立即用去离子水和无水乙醇清洗干净，电吹风吹干后立即放入培养皿并保存于真空干燥箱中。
另外，本发明创造不意味着说明书所局限，在没有脱离设计宗旨的前提下可以有所变化。

Claims (2)

1.一种高反射率太阳能薄膜的制备方法，其特征是：采用直流磁控溅射法在玻璃基材上制备纳米 Ag 薄膜，并采用射频磁控溅射法在其上镀一层 SiO2薄膜作为保护层。
2.根据权利要求1所述的一种高反射率太阳能薄膜的制备方法，其特征是：银膜的厚度为 130 nm ，二氧化硅薄膜的厚度为 320 nm。
CN201310630482.4A 2013-12-02 2013-12-02 一种高反射率太阳能薄膜的制备方法 Pending CN104681662A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310630482.4A CN104681662A (zh) 2013-12-02 2013-12-02 一种高反射率太阳能薄膜的制备方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310630482.4A CN104681662A (zh) 2013-12-02 2013-12-02 一种高反射率太阳能薄膜的制备方法

Publications (1)

Publication Number Publication Date
CN104681662A true CN104681662A (zh) 2015-06-03

Family

ID=53316471

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310630482.4A Pending CN104681662A (zh) 2013-12-02 2013-12-02 一种高反射率太阳能薄膜的制备方法

Country Status (1)

Country Link
CN (1) CN104681662A (zh)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105839062A (zh) * 2016-04-05 2016-08-10 吉林师范大学 一种复合型多层膜结构银纳米线及其制备方法
CN105855710A (zh) * 2016-05-11 2016-08-17 西安交通大学 一种基于Au诱导的ITO薄膜上制备周期结构的方法
CN106399940A (zh) * 2016-08-05 2017-02-15 武汉理工大学 一种太阳能热发电反射镜用SiO2‑Ag‑SiO2复合膜及其制备方法
CN107293605A (zh) * 2016-04-05 2017-10-24 神华（北京）光伏科技研发有限公司 太阳能电池背电极和太阳能电池及其制备方法
CN107557740A (zh) * 2016-06-23 2018-01-09 扬中市润宇电力设备有限公司 一种Ag-SiO2高反射率太阳能薄膜表面反射材料的制备方法
CN108950495A (zh) * 2018-08-01 2018-12-07 河南城建学院 覆有TiN/TiSiN/SiN薄膜涂层的太阳能高效吸收复合材料的制备方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105839062A (zh) * 2016-04-05 2016-08-10 吉林师范大学 一种复合型多层膜结构银纳米线及其制备方法
CN107293605A (zh) * 2016-04-05 2017-10-24 神华（北京）光伏科技研发有限公司 太阳能电池背电极和太阳能电池及其制备方法
CN105855710A (zh) * 2016-05-11 2016-08-17 西安交通大学 一种基于Au诱导的ITO薄膜上制备周期结构的方法
CN107557740A (zh) * 2016-06-23 2018-01-09 扬中市润宇电力设备有限公司 一种Ag-SiO2高反射率太阳能薄膜表面反射材料的制备方法
CN106399940A (zh) * 2016-08-05 2017-02-15 武汉理工大学 一种太阳能热发电反射镜用SiO2‑Ag‑SiO2复合膜及其制备方法
CN108950495A (zh) * 2018-08-01 2018-12-07 河南城建学院 覆有TiN/TiSiN/SiN薄膜涂层的太阳能高效吸收复合材料的制备方法

Similar Documents

Publication Publication Date Title
Sarkın et al. A review of anti-reflection and self-cleaning coatings on photovoltaic panels
CN104681662A (zh) 一种高反射率太阳能薄膜的制备方法
CN102306666B (zh) 一种具有梯度能带的铜铟镓硒太阳能电池及其制备方法
CN103388917B (zh) 一种太阳能选择性吸收涂层及其制备方法
Tan et al. Highly transparent modulated surface textured front electrodes for high‐efficiency multijunction thin‐film silicon solar cells
Janthong et al. Management of light-trapping effect for a-Si: H/µc-Si: H tandem solar cells using novel substrates, based on MOCVD ZnO and etched white glass
CN101840961A (zh) 一种晶体硅太阳电池工业化生产工艺
CN102403376B (zh) 含有硅量子点的n-i-p异质结太阳能电池及其制备方法
CN105161558A (zh) 一种太阳能电池封装薄膜
Zhang et al. SiN x/Cu Spectral Beam Splitting Films for Hybrid Photovoltaic and Concentrating Solar Thermal Systems
CN107217232A (zh) 一种提高氧化锌透明导电薄膜化学稳定性的方法
CN106206779A (zh) 以硅纳米柱阵列为基底的异质结太阳电池及其制备方法
Wu et al. Performance enhancement of pc-Si solar cells through combination of anti-reflection and light-trapping: Functions of AAO nano-grating
CN101136443A (zh) 具有增透保护膜的柔性转移衬底太阳电池及其制备方法
CN104064623A (zh) 一种提升太阳电池转换效率的后处理方法
CN109972111A (zh) 一种高掺杂MoOx基光热转换涂层及其制备方法
CN202710766U (zh) 太阳能反射镜
Fang et al. Substrate effect on ultra-thin hydrogenated amorphous silicon solar cells
CN103066134B (zh) 一种薄膜太阳能电池背反电极及其制备方法
CN105405910A (zh) 一种异质结太阳能电池及其制备方法与太阳能电池组件
Isshiki et al. New method to measure whole-wavelength transmittance of TCO substrates for thin-film silicon solar cells
Teppe et al. Progress in the industrial evaluation of the mc-Si PERCT technology based on boron diffusion
CN103972321B (zh) 一种纤维状硅基薄膜太阳电池及其制备方法
CN103963387A (zh) 一种高吸热低反射蓝膜镀膜玻璃及其制造方法
He et al. Plasma-enhanced chemical vapor-deposited SiN and liquid-phase-deposited SiO2 stack double-layer anti-reflection films for multi-crystalline solar cells

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20150603