CN104681471B - Wet-method etching equipment - Google Patents
Wet-method etching equipment Download PDFInfo
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- CN104681471B CN104681471B CN201510107896.8A CN201510107896A CN104681471B CN 104681471 B CN104681471 B CN 104681471B CN 201510107896 A CN201510107896 A CN 201510107896A CN 104681471 B CN104681471 B CN 104681471B
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- etch chamber
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- wet
- chamber
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- 238000005530 etching Methods 0.000 title claims abstract description 103
- 238000000034 method Methods 0.000 title claims abstract description 55
- 239000007788 liquid Substances 0.000 claims abstract description 72
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 238000002425 crystallisation Methods 0.000 claims abstract description 27
- 230000008025 crystallization Effects 0.000 claims abstract description 26
- 239000007921 spray Substances 0.000 claims abstract description 21
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 4
- 230000000873 masking effect Effects 0.000 claims description 54
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 40
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 30
- 235000006408 oxalic acid Nutrition 0.000 claims description 13
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 6
- 239000011148 porous material Substances 0.000 claims description 6
- 239000000243 solution Substances 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 2
- 238000007689 inspection Methods 0.000 claims 2
- 239000012670 alkaline solution Substances 0.000 claims 1
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 230000003749 cleanliness Effects 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
- 230000008901 benefit Effects 0.000 description 8
- 238000005406 washing Methods 0.000 description 8
- 238000001039 wet etching Methods 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 7
- 239000002351 wastewater Substances 0.000 description 7
- 230000000875 corresponding effect Effects 0.000 description 5
- 230000007306 turnover Effects 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000012216 screening Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- KBIWNQVZKHSHTI-UHFFFAOYSA-N 4-n,4-n-dimethylbenzene-1,4-diamine;oxalic acid Chemical compound OC(=O)C(O)=O.CN(C)C1=CC=C(N)C=C1 KBIWNQVZKHSHTI-UHFFFAOYSA-N 0.000 description 1
- 101100033865 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) RFA1 gene Proteins 0.000 description 1
- 101100524516 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) RFA2 gene Proteins 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000008400 supply water Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000010626 work up procedure Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Liquid Crystal (AREA)
- ing And Chemical Polishing (AREA)
Abstract
The invention provides a kind of wet-method etching equipment.The wet-method etching equipment has the function of removing the outer etching liquid crystallization of etch chamber, and it includes：Etch chamber, is performed etching to the film to be etched on substrate by etching liquid inside it, has etch chamber entrance in its front end, is exported in its back-end with etch chamber；Shower, is arranged at the lower section of the etch chamber entrance and/or etch chamber outlet, and the shower can spray liquid upward, is crystallized with the etching liquid cleaned in etch chamber entrance and/or the formation of etch chamber exit.The present invention is sprayed by shower to etch chamber entrance, etch chamber exit, a large amount of etching liquids crystallization in etch chamber entrance, the generation of etch chamber exit can effectively be removed, equipment mobility, cleanliness factor and product quality are improved, a great problem in TFT substrate manufacture craft is solved.
Description
Technical field
The present invention relates to microelectronic processing equipment technical field, more particularly to a kind of wet-method etching equipment.
Background technology
At present, in FPD (Flat Panel Display, abbreviation FPD) technology, due to liquid crystal display
(Liquid Crystal Display, abbreviation LCD) has compact, the advantages of saving placing space, gradually replaces
Cathode-ray tube (Cathode Ray Tube, abbreviation CRT), the display as main flow.In various types of LCD, film
Field-effect transistor liquid crystal display (Thin Film Transistor-Liquid Crystal Display, abbreviation TFT-
LCD) there is function admirable, the advantages of being adapted to mass automatic production, the LCD products of main flow are had become.
In TFT-LCD manufacturing process, ITO (Indium Tin Oxide, tin indium oxide) relies on its own excellent spy
Property, it is widely used in making transparent display electrode.In transparent show electrode manufacturing process, pass through magnetron sputtering first
(sputter) ito thin film is formed, then by being lithographically formed photoetching offset plate figure, finally by wet etching by ito thin film pattern
Change, form final transparent display electrode.
Fig. 1 is that prior art is used for the structural representation for the wet-method etching equipment that ito thin film is patterned.It refer to Fig. 1, table
The substrate of face covering ito thin film is entered by gateway unit (IN CV), the organic matter on surface is removed in cleaning chamber (EUV), then
Into transition element (NEU), then after, etch chamber (ETCH) is entered by preceding cushion chamber (BUF1).In etch chamber, pass through etching
Liquid removes the ito thin film that need not retain on substrate (ito thin film for not being photo-etched glue pattern covering).Then, substrate by
Cushion chamber (BUF2) is sent out afterwards, via the first washing unit (SWR1), the second washing unit (SWR2), the 3rd washing unit
(SWR3), the 4th washing unit (SWR4) and final washing unit CFR) cleaned, the etching liquid of substrate surface residual is removed,
After again, it is dried, is finally transferred out by delivery unit (NT) and outlet port unit (OUT CV) wet via air knife unit (AK)
Method etching apparatus.
Fig. 2A is the top view of etch chamber and forward and backward cushion chamber in wet-method etching equipment shown in Fig. 1.Fig. 2 B are shown in Fig. 1
The side view of etch chamber and forward and backward cushion chamber in wet-method etching equipment.As shown in Figure 2 A and 2 B, it is each before and after etch chamber 200
There are a cushion chamber-preceding cushion chamber 100 and rear cushion chamber 300.Transmission wheel (101,201,301 etc.) is by substrate 400 by preceding cushion chamber
100, which are sent to etch chamber 200, performs etching, and the substrate that then again can etch completion is sent to rear cushion chamber by etch chamber 200
300。
Door (shutter) 203 is covered before preceding cushion chamber 100 is provided with close to the etch chamber porch of etch chamber 200.Should
The bottom of preceding masking door 203 is provided with rotating shaft (shaft) 203a.Rotating shaft 203a and cylinders, pass through the work up and down of cylinder
Dynamic, masking door carries out up/down upset and completes ON/OFF action before can driving.Entered in substrate 400 by preceding cushion chamber 100 and etched
Before chamber 200, the preceding masking door 203 is opened.After substrate 400 is completely into etch chamber 200, preceding masking door 203 is closed.
Equally, door (shutter) 204 is covered after rear cushion chamber 300 is provided with close to the exit of etch chamber 200.Should
The structure and working method of masking door 204 are identical with preceding masking door 203 afterwards, and its underpart is equally provided with rotating shaft (shaft) 204a.
Before substrate 400 enters rear cushion chamber 300, the rear masking door 204 is opened.After substrate 400 is completely into rear cushion chamber 300,
Masking door 204 is closed afterwards.
It can be seen that, in addition to the time that substrate is flowed into and out, etch chamber 200 keeps relative closure, so as to be substrate
Etching builds a stable etching environment.
Substrate etching is general to use the substrate of spray model, i.e. spray equipment 202 downwards to spray etching liquid, so that will not
The ito thin film for being photo-etched glue pattern covering is removed.Oxalic acid (is called ethanedioic acid), because its is with low cost, and can fully meet whole
TFT substrate process requirements, thus be widely used among ITO wet etchings.In TFT substrate technique, ITO wet etchings institute
Oxalic acid is generally the aqueous solution of the concentration 3.4%~3.8%, and technological temperature is at 40 DEG C~45 DEG C.However, oxalic acid has a spy
Point, its to the cold after easily form white crystals.And the white crystals are dissolved in water.
During ITO wet etchings, preceding masking door 203 is covered in the continuous folding of door 204, etch chamber 200 with rear
Oxalic acid can be evaporated from the masking door in open mode.Because the temperature of forward and backward cushion chamber is below the temperature of etch chamber,
Oxalic acid is crystallized to the cold, can form mass crystallization 601 at the entrance of etch chamber, outlet and masking door, as shown in Figure 3.It is of long duration
, entrance and the outlet of whole etch chamber can be covered, such as cleans not in time, the pollution of machine inside environment will be caused, even
The scuffing of substrate is caused, product quality is had a strong impact on.However, frequently cleaning, the substantial amounts of working time (up of equipment can be taken
Time), equipment mobility is reduced.
In addition, being easy to produce the etching liquid crystallized (for example for other used in semiconductor relevant industries wet etching：
With HNO3、CH3COOH or H3PO4For main component, for AL, MO, Ag, oxide (such as ITO, IGZO) etching etching
Liquid；With H2O2Cu etching liquids for main component etc.), there is also above-mentioned crystallisation problems.Therefore, how to solve to use and be easy to produce
The problem of etching liquid of crystallization carries out producing mass crystallization during wet etching, it has also become semiconductor relevant industries wet-etching technology
In a great problem.
The content of the invention
(1) technical problem to be solved
In view of above-mentioned technical problem, the invention provides a kind of wet-method etching equipment, to remove entrance, the outlet of etch chamber
The etching liquid crystallization at place, is improved production efficiency and product quality.
(2) technical scheme
There is the present invention wet-method etching equipment for removing the outer etching liquid crystallization function of etch chamber to include：Etch chamber, inside it
The film to be etched on substrate is performed etching by etching liquid, there is etch chamber entrance in its front end, in its back-end with quarter
Lose chamber outlet；Shower, is arranged at the lower section of the etch chamber entrance and/or etch chamber outlet, the shower can be upward
Liquid is sprayed, is crystallized with the etching liquid cleaned in etch chamber entrance and/or the formation of etch chamber exit.
(3) beneficial effect
It can be seen from the above technical proposal that wet-method etching equipment of the present invention has the advantages that：
(1) by being sprayed to etch chamber entrance, etch chamber exit, can effectively it remove in etch chamber entrance, etching
A large amount of etching liquids crystallization that chamber exit is produced, improves equipment mobility, cleanliness factor and product quality；
(2) liquid feeding pipeline can recycle the waste water of wet-method etching equipment discharge, the extra water resource without consuming, drop
Low production cost.
Brief description of the drawings
Fig. 1 is that prior art is used for the structural representation for the wet-method etching equipment that ito thin film is patterned；
Fig. 2A is the top view of etch chamber and forward and backward cushion chamber in wet-method etching equipment shown in Fig. 1；
Fig. 2 B are the side view of etch chamber and forward and backward cushion chamber in wet-method etching equipment shown in Fig. 1；
Fig. 3 is the schematic diagram that wet-method etching equipment shown in Fig. 1 forms oxalic acid crystallization at masking door；
Fig. 4 A are the schematic diagram according to first embodiment of the invention wet-method etching equipment；
Fig. 4 B are schematic diagram of the preceding cushion chamber close to etch chamber position in wet-method etching equipment shown in Fig. 4 A；
Fig. 5 is the schematic diagram according to second embodiment of the invention wet-method etching equipment；
Fig. 6 is the schematic diagram of the wet-method etching equipment course of work shown in Fig. 5.
【Main element】
Cushion chamber before 100-；
101- transmission wheels；
200- etch chambers
201- transmission wheels；202- spray equipments；
Door is covered before 203-；Door is covered after 204-；
203a, 204a- rotating shaft；
Cushion chamber after 300-；
301- transmission wheels；
400- substrates；
500- decrystallizes device；
Shower before 501-；Shower after 502-；
501a, 502a- valve；501b, 502b- pump
503- liquid feeding pipelines；504- water tanks；
601- etching liquids are crystallized.
Embodiment
The characteristics of embodiments of the invention are dissolved in water using oxalic acid crystallization, passes through the masking in etch chamber entrance and exit
Door lower section increase shower, can effectively remove a large amount of etching liquids produced at etch chamber entrance, etch chamber outlet and masking door
Crystallization.For the object, technical solutions and advantages of the present invention are more clearly understood, below in conjunction with specific embodiment, and with reference to attached
Figure, the present invention is described in more detail.
First, first embodiment
There is provided a kind of wet-method etching equipment in one exemplary embodiment of the present invention.Fig. 4 A are according to the present invention
The schematic diagram of first embodiment wet-method etching equipment.Fig. 4 B are preceding cushion chamber in wet-method etching equipment shown in Fig. 4 A close to etch chamber
The schematic diagram of position.As shown in Figure 4 A and 4 B shown in FIG., the present embodiment wet-method etching equipment includes：Preceding cushion chamber 100, etch chamber 200,
Cushion chamber 300 and decrystallize device 500 afterwards.The device 500 that decrystallizes includes：Close to etch chamber in cushion chamber 100 before being installed on
The preceding shower 501 of 200 sides；It is installed on rear shower 502 of the rear cushion chamber 300 close to the side of etch chamber 200；And supply
Liquid pipeline 503.The preceding shower 501 and rear shower 502 by the feed flow of liquid feeding pipeline 503, for clean etch chamber entrance,
Etch chamber exports and covered the etching liquid crystallization formed at door.
Fig. 4 A are refer to, etch chamber 200 is wet-method etching equipment critical piece.In etch chamber 200, spray equipment 202
Substrate downwards sprays the oxalic acid solution of preset concentration, and the ito thin film not being covered by photoresist on substrate is removed.
Preceding cushion chamber 100 and rear cushion chamber 300 are connected to the front-end and back-end of etch chamber 200, and both pass through respectively
Etch chamber entrance and etch chamber outlet are connected with etch chamber 200.Be provided with carrying path continuous transmission wheel (101,
201、301).Substrate 400 is carried out by preceding cushion chamber 100 under the promotion of transmission wheel by etch chamber entrance into etch chamber 200
Etching, and rear cushion chamber 300 is sent to by etch chamber outlet by etch chamber 200.
In preceding cushion chamber close to etch chamber porch, masking door 203 before being provided with.The preceding masking door 203 passes through a rotating shaft
203a is installed on the bottom of etch chamber entrance.Before substrate 400 enters etch chamber 200, the preceding door 203 that covers is towards preceding cushion chamber
100 90 ° of sides are turned down, and open etch chamber entrance.Substrate 400 enters etch chamber 200 by etch chamber entrance.Enter completely in substrate 400
Enter after etch chamber 200, the preceding masking door 203 closes etch chamber entrance towards the turnover of 90 ° of 200 side of etch chamber, to ensure etching
The relative closure of environment in chamber 200.
Equally, in rear cushion chamber close to etch chamber exit, door 204 is covered after being provided with.The rear masking door 204 passes through one
Rotating shaft is installed on the bottom of etch chamber outlet.Before substrate 400 enters rear cushion chamber 300, the rear masking door 204 is buffered after
The turnover of 90 ° of 300 side of chamber, opens etch chamber outlet.Substrate 400 enters rear cushion chamber 300 by etch chamber outlet.It is complete in substrate 400
Enter entirely after rear cushion chamber 300, etch chamber is exported and closed towards the turnover of 90 ° of 200 side of etch chamber by the rear masking door 204, to protect
Demonstrate,prove the relative closure of environment in etch chamber 200.
Fig. 4 A and Fig. 4 B are refer to, in preceding cushion chamber 100, the bottom of preceding masking door 203, shower 501 before being provided with.
In rear cushion chamber 300, the bottom of rear masking door 204 is provided with rear shower 502.The preceding shower 501 and rear shower
502 by the feed flow of liquid feeding pipeline 503, and the water column that both spray can carry out clear to the masking door corresponding site in turnover state
Wash, before oxalic acid formation crystallization, remove it.
In the present embodiment, preceding shower 501 and rear shower 502 include：Spray tube body and be distributed in the shower
Body and the pore of direction upward.Wherein, the aperture of the pore is typically in the range of between 2~5mm.Herein, sprayed due to it
The water capacity is easily splashed on substrate, therefore the present invention does not recommend to be sprayed using nozzle.
It should be strongly noted that the water-column that pore is sprayed on preceding shower 501 and rear shower 502, with just
It is flushed to the masking door in the state that is turned over downwards preferably.Water column is too high, and the globule can be splashed on substrate, influences oxalic acid etching liquid
Concentration, cause etching residue, mura (the uneven aberration produced of etching) etc. is bad；Water column is too low, then can influence to remove crystallization
Effect.
Refer to Fig. 4 A, preceding shower 501 and rear shower 502 it is closed at both ends, middle part respectively by valve 501a and
Valve 502a is connected with liquid feeding pipeline 503.Wherein, valve (501a, 502a) is used to adjust the hydraulic pressure in shower, and then controls
The water-column that pore is sprayed on shower.Waste water after cleaning can be discharged by the discharge of wastewater pipeline of forward and backward cushion chamber.For
Liquid pipeline 503 is communicated to factory service pure water pipeline.
It should be noted that in the present embodiment and hereafter several embodiments, using same in preceding cushion chamber and rear cushion chamber
When the mode of device of decrystallizing is set, but the present invention is not limited thereto.The present invention can also be only in preceding cushion chamber and rear buffering
The device that decrystallizes is set in one of chamber, equally should be within protection scope of the present invention.
In addition, in the present embodiment and hereafter several embodiments, using preceding shower and the unified side supplied water of rear shower
Formula, but the present invention is not limited thereto.The preceding shower and rear shower can also supply water respectively, can equally realize this hair
It is bright.
The advantage of the present embodiment wet-method etching equipment is：Etch chamber import, etch chamber are exported by shower, and masking
Etching liquid crystallization at door is cleaned always, and removal crystallization effect is good, and design cost is relatively low；Shortcoming is：Shower is always
In cleaning state, waste water resource.
2nd, second embodiment
In another embodiment of the present invention, another wet-method etching equipment is additionally provided.Fig. 5 is according to the present invention
The schematic diagram of second embodiment wet-method etching equipment.It refer to Fig. 4 A and Fig. 5, the present embodiment wet-method etching equipment and embodiment one
It is in place of the difference of wet-method etching equipment：The difference of the feed liquid way of liquid feeding pipeline.
As shown in figure 5, in the present embodiment wet-method etching equipment, spraying the device that decrystallizes also includes：Water tank 504, two pumps
(501b、502b).Wherein, the water that liquid feeding pipeline 503 is connected in water tank 504, water tank 504 is supplied by factory service pure water pipeline.Pump
501b is arranged between liquid feeding pipeline 503 and preceding shower 501.Pump 502b be arranged at liquid feeding pipeline 503 and rear shower 502 it
Between.
Preceding shower 501 is connected to liquid feeding pipeline 503 by pump 501b, pump 501b control signal and preceding masking door gas
The control signal of cylinder is consistent, i.e.,：When the preceding masking door 203 opens (i.e. forward caching chamber rollover folding), pump 501b is opened, preceding spray
Pipe 501 is cleaned to the masking water spray of door 203；When current masking door 203 (is turned on one's side to etch chamber and rolled over) when closing, pump 501b is closed
Close, preceding shower is no longer sprayed water.
Equally, rear shower 502 is connected to liquid feeding pipeline 503 by pump 502b, pump 502b control signal and rear screening
The control signal for covering door cylinder is consistent, no longer repeats herein.
Fig. 6 is the schematic diagram of the wet-method etching equipment course of work shown in Fig. 5.Fig. 6 is refer to, the present embodiment wet etching is set
The standby course of work is as follows：
Step A：On carrying path under the promotion of transmission wheel, the substrate 400 positioned at preceding cushion chamber is towards the side of etch chamber 200
To motion, as shown in A in Fig. 6；
Step B：Before substrate 400 enters etch chamber 200, the preceding masking door 203 rolls over 90 ° towards the rollover of preceding cushion chamber, will
Etch chamber entrance is opened, meanwhile, pump 501b is opened, and preceding shower 501 is sprayed water to masking door 203, to etch chamber entrance and preceding screening
Cover the crystallization of the etching liquid at door 203 to be cleaned, the height of water spray is determined by valve 501a, as shown in B in Fig. 6；
Step C：After substrate 400 is completely into etch chamber 200, preceding masking door 203 is turned on one's side towards etch chamber to be rolled over, by etch chamber
Entrance is closed, while pump 501b is simultaneously closed off, as shown in C in Fig. 6；
Step D：In substrate 400 before rear cushion chamber 300, rear masking door 204 rolls over 90 ° towards the rollover of rear cushion chamber, beats
Open etch chamber outlet, substrate 400 by etch chamber outlet enter rear cushion chamber 300, meanwhile, pump 502b open, rear shower 502 to
Masking door 204 is sprayed water afterwards, etch chamber is exported and rear masking door 204 at etching liquid crystallization clean, the height of water spray by
Valve 502a is determined, as shown in D in Fig. 6；
Step E：After substrate 400 is completely into rear cushion chamber 300, rear masking door 204 is turned on one's side towards etch chamber 200 to be rolled over, will
Etch chamber outlet closing, while pump 502b is closed, as shown in E in Fig. 6；
The advantage of the present embodiment wet-method etching equipment is：Only when substrate passes in and out etch chamber, by spray equipment to etching
The etching liquid crystallization that chamber enters and (gone out) at mouth and corresponding masking door is cleaned, and removal crystallization effect is good, saves water resource；Shortcoming exists
In：Structure is more complicated, and design cost is higher.
3rd, 3rd embodiment
In another embodiment of the present invention, another wet-method etching equipment is additionally provided.The present embodiment wet method is carved
It is in place of the difference of erosion equipment and second embodiment：Cell S WR1 discharge of wastewater pipeline is washed by wet-method etching equipment first
Draw one of pipeline feed-tank water supply.The flow of first washing cell S WR1 washings is larger, and this dress that decrystallizes can be met completely
The water for removing oxalic acid crystallization is put, unnecessary water can be discharged from the top of water tank.
Other operation principles of the present embodiment wet-method etching equipment are identical with second embodiment, no longer repeat herein.
Under normal conditions, the first washing cell S WR1 waste water is directly drained.Advantage of this embodiment is that：Go
Except crystallization effect is good, the waste water of wet-method etching equipment discharge is recycled, without consuming water resource, production cost is reduced；Shortcoming
It is：Structure is more complicated, and design cost is higher.
In terms of long-term benefit, the present invention recommends 3rd embodiment.
It should be noted that above three embodiment is illustrated by taking oxalic acid etching solution etching ito thin film as an example, but
The present invention is not limited thereto.Etching liquid can also be easy to produce the etching liquid of crystallization for others, for example：With HNO3、
CH3COOH or H3PO4For main component, for AL, MO, Ag, the etching liquid of oxide (such as ITO, IGZO) etching, with H2O2
Cu etching liquids for main component etc..In such a case, it is possible to be cleaned using pure water to etching liquid crystallization, it can also adopt
Increase corresponding effect enhancing ingredients with other liquid or in pure water, such as NaOH, KOH etc., specifically make depending on wet-method etching equipment
Depending on etching liquid situation.
In addition, in the front end of etch chamber, can also be other chambers in addition to preceding cushion chamber；Equally, in etch chamber
Rear end, can also be other chambers in addition to rear cushion chamber, can equally be applicable the present invention.
So far, three embodiments of the invention are described in detail combined accompanying drawing.According to above description, this area
Technical staff should have clear understanding to wet-method etching equipment of the present invention.
In addition, the above-mentioned definition to each element and method is not limited in various concrete structures, the shape mentioned in embodiment
Shape or mode, those of ordinary skill in the art simply can be changed or be replaced to it, for example：Except in above-described embodiment
Outside the masking door for turning down type, other kinds of masking door is equally applicable to the present invention, in addition, the turnover angle of masking door
Degree can be adjusted as needed, and be not strictly limited to described above 90 °.
In summary, the present invention increases shower by the etch chamber entrance to etch chamber and etch chamber exit, can be with
Crystallized with relatively low cost-effective removal in a large amount of etching liquids that etch chamber entrance, exit are produced, improve equipment mobility, it is clean
Cleanliness and product quality, with higher application value.
It should be noted that in accompanying drawing or specification description, similar or identical part all uses identical figure number.It is attached
The implementation for not illustrating or describing in figure, is form known to a person of ordinary skill in the art in art.In addition, though this
Text can provide the demonstration of the parameter comprising particular value, it is to be understood that parameter is without being definitely equal to corresponding value, but be able to can connect
The error margin received is similar to corresponding value in design constraint.The direction term mentioned in embodiment, for example " on ", " under ",
"front", "rear", "left", "right" etc., are only the directions of refer to the attached drawing.Therefore, the direction term used is for illustrating not to use
To limit the scope of the invention.
Particular embodiments described above, has been carried out further in detail to the purpose of the present invention, technical scheme and beneficial effect
Describe in detail it is bright, should be understood that the foregoing is only the present invention specific embodiment, be not intended to limit the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvements done etc., should be included in the guarantor of the present invention
Within the scope of shield.
Claims (8)
1. a kind of wet-method etching equipment, it is characterised in that the wet-method etching equipment, which has, removes the outer etching liquid crystallization of etch chamber
Function, it includes：
Etch chamber, is performed etching to the film to be etched on substrate by etching liquid inside it, in its front end there is etch chamber to enter
Mouthful, exported in its back-end with etch chamber；
Shower, is arranged at the lower section of the etch chamber entrance and/or etch chamber outlet, and the shower can spray liquid upward
Body, is crystallized with the etching liquid cleaned in etch chamber entrance and/or the formation of etch chamber exit；
Adjacent chambers, are connected to the front end or rear end of the etch chamber；
Door is covered, to turn down the masking door of type, etch chamber entrance is installed on by a rotating shaft or etch chamber is exported, it is in substrate
By when open, other times close；
Wherein, the shower is arranged at the lower section of the masking door in open mode, to clean the quarter formed on masking door
Liquid crystallization is lost, it is concordant with the masking door in open mode that the shower sprays the height of liquid upwards；
Wherein, the liquid of the spray pipe inspection is alkaline solution；
The wet-method etching equipment also includes：Liquid feeding pipeline, for supplying liquid for the shower；Valve, is arranged at described
Between liquid feeding pipeline and the shower, the pressure for adjusting liquid in liquid feeding pipeline, and then control spray pipe inspection liquid
Height；
Wherein, in closed state, the masking door is vertical with the direction that substrate is advanced, the etching between adjacent chambers and etch chamber
Chamber entrance and/or etch chamber port closing；In the on-state, it is described masking door towards adjacent chambers direction turn down 90 °, it is adjacent
Etch chamber entrance and/or etch chamber outlet between chamber and etch chamber are opened.
2. wet-method etching equipment according to claim 1, it is characterised in that：
The shower is all the time to upward injection liquid；Or
When the masking door is in open mode, the shower sprays liquid upwards, when the masking door is in closure state,
The shower stops spraying liquid upward.
3. wet-method etching equipment according to claim 1, it is characterised in that the shower includes：
Spray tube body；And
Multigroup pore, is distributed on the spray tube body and the masking door of direction upward.
4. wet-method etching equipment according to claim 3, it is characterised in that the aperture of the pore between 2mm~5mm it
Between.
5. wet-method etching equipment according to claim 1 or 2, it is characterised in that including：Adjacent chambers described in two and two
Individual described shower；Wherein：
Two adjacent chambers are preceding cushion chamber and rear cushion chamber, are connected respectively by preceding masking door and rear masking door with the etch chamber
It is logical；
Two showers include：Preceding shower, is installed in the preceding cushion chamber, the lower section of the preceding masking door；Shower afterwards,
It is installed in the rear cushion chamber, the lower section of the rear masking door.
6. wet-method etching equipment according to claim 1, it is characterised in that the etching liquid is oxalic acid solution, HNO3It is molten
Liquid, CH3COOH solution or H3PO4Solution.
7. wet-method etching equipment according to claim 1, it is characterised in that between the liquid feeding pipeline and the shower
Pump is provided with, the control signal of the pump is consistent with the control signal of the masking door：
When covering door opening, pump is opened simultaneously, and the liquid feeding pipeline starts to supply liquid to shower；
When covering door closing, pump is simultaneously closed off, and the liquid feeding pipeline stops supplying liquid to shower.
8. wet-method etching equipment according to claim 1, it is characterised in that the liquid feeding pipeline is connected to water tank.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510107896.8A CN104681471B (en) | 2015-03-12 | 2015-03-12 | Wet-method etching equipment |
| US14/906,866 US20170110344A1 (en) | 2015-03-12 | 2015-08-14 | Wet etching apparatus |
| PCT/CN2015/087022 WO2016141675A1 (en) | 2015-03-12 | 2015-08-14 | Wet etching equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510107896.8A CN104681471B (en) | 2015-03-12 | 2015-03-12 | Wet-method etching equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104681471A CN104681471A (en) | 2015-06-03 |
| CN104681471B true CN104681471B (en) | 2017-09-15 |
Family
ID=53316351
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510107896.8A Expired - Fee Related CN104681471B (en) | 2015-03-12 | 2015-03-12 | Wet-method etching equipment |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20170110344A1 (en) |
| CN (1) | CN104681471B (en) |
| WO (1) | WO2016141675A1 (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104681471B (en) * | 2015-03-12 | 2017-09-15 | 京东方科技集团股份有限公司 | Wet-method etching equipment |
| CN105044943B (en) * | 2015-08-25 | 2018-02-23 | 深圳市华星光电技术有限公司 | Etaching device |
| CN106971933B (en) * | 2017-03-31 | 2018-10-19 | 深圳市华星光电技术有限公司 | Etching chamber and its cleaning assembly with automatic cleaning function, cleaning method |
| CN109087871B (en) * | 2018-07-20 | 2020-09-01 | 深圳市华星光电技术有限公司 | Wet etching machine |
| CN108811352A (en) * | 2018-08-02 | 2018-11-13 | 宁波东盛集成电路元件有限公司 | PCB board etching machine |
| CN109659261B (en) * | 2018-12-19 | 2021-08-24 | 武汉华星光电半导体显示技术有限公司 | Substrate etching equipment and processing system thereof |
| CN110197802B (en) * | 2019-05-16 | 2021-01-01 | 武汉华星光电半导体显示技术有限公司 | Wet etching equipment |
| US11373885B2 (en) * | 2019-05-16 | 2022-06-28 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Wet etching apparatus |
| CN110634773B (en) * | 2019-08-29 | 2022-04-01 | 武汉华星光电半导体显示技术有限公司 | Wet etching equipment, control method thereof and storage medium |
| CN112466774B (en) * | 2019-09-06 | 2023-11-17 | 泰州隆基乐叶光伏科技有限公司 | Etching equipment |
| CN113552042A (en) * | 2021-07-21 | 2021-10-26 | 乐金显示光电科技(中国)有限公司 | Wet etching equipment and management method thereof |
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| CN201520802U (en) * | 2009-08-21 | 2010-07-07 | 深圳华映显示科技有限公司 | Wet etching equipment |
| CN102154648A (en) * | 2010-02-12 | 2011-08-17 | 住友精密工业株式会社 | Etching method |
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| JP2000144454A (en) * | 1998-11-18 | 2000-05-26 | Hitachi Ltd | Equipment and method for wet etching |
| EP1108804A3 (en) * | 1999-11-29 | 2004-03-10 | Canon Kabushiki Kaisha | Process and apparatus for forming zinc oxide film, and process and apparatus for producing photovoltaic device |
| US20050061775A1 (en) * | 2003-09-19 | 2005-03-24 | Kuo-Tang Hsu | Novel design to eliminate wafer sticking |
| KR20070057482A (en) * | 2005-12-02 | 2007-06-07 | 삼성전자주식회사 | Wet etching apparatus |
| JP5133428B2 (en) * | 2009-02-02 | 2013-01-30 | シャープ株式会社 | Substrate processing equipment |
| CN201611648U (en) * | 2009-12-15 | 2010-10-20 | 中芯国际集成电路制造(上海)有限公司 | Wet etching equipment |
| JP2012081428A (en) * | 2010-10-13 | 2012-04-26 | Tokyo Ohka Kogyo Co Ltd | Coating apparatus and coating method |
| KR102092702B1 (en) * | 2011-06-14 | 2020-05-28 | 삼성디스플레이 주식회사 | Apparatus for cleaning substrate |
| CN102800581A (en) * | 2012-08-28 | 2012-11-28 | 常州捷佳创精密机械有限公司 | Equipment and method for softly etching and cleaning solar cell slice |
| JP6260109B2 (en) * | 2013-05-16 | 2018-01-17 | シンフォニアテクノロジー株式会社 | Load port device |
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- 2015-03-12 CN CN201510107896.8A patent/CN104681471B/en not_active Expired - Fee Related
- 2015-08-14 US US14/906,866 patent/US20170110344A1/en not_active Abandoned
- 2015-08-14 WO PCT/CN2015/087022 patent/WO2016141675A1/en active Application Filing
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| CN201520802U (en) * | 2009-08-21 | 2010-07-07 | 深圳华映显示科技有限公司 | Wet etching equipment |
| CN102154648A (en) * | 2010-02-12 | 2011-08-17 | 住友精密工业株式会社 | Etching method |
| CN102163543A (en) * | 2010-12-15 | 2011-08-24 | 友达光电股份有限公司 | Etching apparatus and control method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| US20170110344A1 (en) | 2017-04-20 |
| CN104681471A (en) | 2015-06-03 |
| WO2016141675A1 (en) | 2016-09-15 |
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