CN104637786B - A kind of method of silicon nitride coating in removal IC sheet stocks - Google Patents

A kind of method of silicon nitride coating in removal IC sheet stocks Download PDF

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Publication number
CN104637786B
CN104637786B CN201510043357.2A CN201510043357A CN104637786B CN 104637786 B CN104637786 B CN 104637786B CN 201510043357 A CN201510043357 A CN 201510043357A CN 104637786 B CN104637786 B CN 104637786B
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silicon nitride
sheet stocks
nitride coating
prepared
concentration
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CN104637786A (en
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梅川奇
傅卓理
何贤安
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Jiangxi Jiushun Technology Co Ltd
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Jiangxi Jiushun Technology Co Ltd
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Abstract

The present invention relates to IC chip processing technique field, and in particular to a kind of method of silicon nitride coating in removal IC sheet stocks, comprises the following steps:Prepare corrosive liquid → cleaning, using the method for silicon nitride coating in the removal IC sheet stocks of the present invention, reaction rate is fast, the time is short, efficiency high, the disposable silicon nitride coating removed in IC sheet stocks can be achieved, it is time saving and energy saving, cleaning cost is reduced, multiple pickling is it also avoid and causes environmental pollution, once purged IC sheet stocks surface profit is bright, disclosure satisfy that large batch of cleaning requirement.

Description

A kind of method of silicon nitride coating in removal IC sheet stocks
Technical field
The present invention relates to IC chip processing technique field, and in particular to one kind removes silicon nitride coating in IC sheet stocks Method.
Background technology
In the production process of IC pieces (IC chip), frequently encountering sheet stock has silicon nitride coating to need to do at removing Reason;Existing silicon nitride etch sweep-out method, mainly there are dry and wet, the deviation of dry etching is small, and the figure of corrosion is controllable, The dosage of chemical reagent used is also smaller, but need to buy special equipment operation, and cost is high, corrosion rate is slower, is generally used for pair The higher etching of required precision, large batch of IC sheet stocks cleaning is not suitable for it;Wet etching uses chemical reagent completely To be corroded, deviation is slightly larger, can receive during applied to high-volume IC sheet stock cleanings, but using the mixed of existing tradition proportioning Acid solution, corrosion rate is still relatively slow, needs repeated multiple times pickling to remove silicon nitride coating, wastes time and energy, be equally unfavorable for dropping Low cost, and influence of the process being cleaned multiple times to environmental protection is also larger.
The content of the invention
The method that the purpose of the present invention aims to provide silicon nitride coating in a kind of removal IC sheet stocks, there is removal efficiency height, Cost is low, it is time saving and energy saving the advantages of.
To achieve the above object, in a kind of removal IC sheet stocks of the invention silicon nitride coating method, comprise the following steps: Corrosive liquid → cleaning is prepared,
1) corrosive liquid is prepared:Take 55% concentration hydrofluoric acid 9.5-10.5,70% concentration nitric acid 0.9-1.1,85% phosphorus concentration Sour 1.8-2.2, rinse bath is placed in, it is now with the current;2) clean:The IC sheet stocks of silicon nitride coating to be removed are placed in rinse bath In the corrosive liquid that step 1) is prepared, in reaction time 1-2min, when IC sheet stocks surface is in that ash is dark-coloured, discharging is rinsed well, is transferred to down Road sodium hydroxide alkali cleaning process.
The method of silicon nitride coating has following excellent effect compared with prior art in a kind of removal IC sheet stocks of the present invention Fruit.
Using the method for silicon nitride coating in the removal IC sheet stocks of the present invention, reaction rate is fast, the time is short, efficiency high, can The disposable silicon nitride coating removed in IC sheet stocks is realized, it is time saving and energy saving, cleaning cost is reduced, multiple pickling is it also avoid and makes Into environmental pollution, once purged IC sheet stocks surface profit is bright, disclosure satisfy that large batch of cleaning requirement.
Embodiment
The method of silicon nitride coating in a kind of removal IC sheet stocks of the present invention is described in further detail below.
The method of silicon nitride coating, comprises the following steps in a kind of removal IC sheet stocks of the present invention:Preparation corrosive liquid → clear Wash,
1) corrosive liquid is prepared:Take 55% concentration hydrofluoric acid 9.5-10.5,70% concentration nitric acid 0.9-1.1,85% phosphorus concentration Sour 1.8-2.2, rinse bath is placed in, it is now with the current;2) clean:The IC sheet stocks of silicon nitride coating to be removed are placed in rinse bath In the corrosive liquid that step 1) is prepared, in reaction time 1-2min, when IC sheet stocks surface is in that ash is dark-coloured, discharging is rinsed well, is transferred to down Road sodium hydroxide alkali cleaning process.
Embodiment 1:
The method of silicon nitride coating, comprises the following steps in a kind of removal IC sheet stocks:
1) corrosive liquid is prepared:55% concentration hydrofluoric acid 9.5,70% concentration nitric acid 0.9,85% concentration phosphoric acid 1.8 are taken, is placed in Rinse bath, it is now with the current;2) clean:The corruption that the step 1) that the IC sheet stocks of silicon nitride coating to be removed are placed in rinse bath is prepared Lose in liquid, reaction time 1min, when IC sheet stocks surface is in that ash is dark-coloured, discharging is rinsed well, is transferred to lower road sodium hydroxide alkali cleaning work Sequence.
Embodiment 2:
The method of silicon nitride coating, comprises the following steps in a kind of removal IC sheet stocks:
1) corrosive liquid is prepared:55% concentration hydrofluoric acid 10,70% concentration nitric acid 1,85% concentration phosphoric acid 2 are taken, is placed in cleaning Groove, it is now with the current;2) clean:The corrosive liquid that the step 1) that the IC sheet stocks of silicon nitride coating to be removed are placed in rinse bath is prepared In, in reaction time 1.5min, when IC sheet stocks surface is in that ash is dark-coloured, discharging is rinsed well, is transferred to lower road sodium hydroxide alkali cleaning process.
Embodiment 3:
The method of silicon nitride coating, comprises the following steps in a kind of removal IC sheet stocks:
1) corrosive liquid is prepared:55% concentration hydrofluoric acid 10.5,70% concentration nitric acid 1.1,85% concentration phosphoric acid 2.2 are taken, is put It is now with the current in rinse bath;2) clean:What the step 1) that the IC sheet stocks of silicon nitride coating to be removed are placed in rinse bath was prepared In corrosive liquid, in reaction time 2min, when IC sheet stocks surface is in that ash is dark-coloured, discharging is rinsed well, is transferred to lower road sodium hydroxide alkali cleaning Process.
Above example is only to spirit of the present invention for example, those skilled in the art can be right Described embodiment make different modes modification supplement or using similar mode replace, but not deviate the present invention essence Scope defined in god.

Claims (4)

1. the method for silicon nitride coating, comprises the following steps in a kind of removal IC sheet stocks:Corrosive liquid → cleaning is prepared, its feature exists In:
(1) corrosive liquid is prepared:Take 55% concentration hydrofluoric acid 9.5-10.5,70% concentration nitric acid 0.9-1.1,85% concentration phosphoric acid 1.8-2.2 rinse bath is placed in, it is now with the current;(2) clean:The IC sheet stocks of silicon nitride coating to be removed are placed in rinse bath In the corrosive liquid that step (1) is prepared, in reaction time 1-2min, when IC sheet stocks surface is in that ash is dark-coloured, discharging is rinsed well, is transferred to down Road sodium hydroxide alkali cleaning process.
2. the method for silicon nitride coating in removal IC sheet stocks according to claim 1, it is characterised in that:
(1) corrosive liquid is prepared:55% concentration hydrofluoric acid 9.5,70% concentration nitric acid 0.9,85% concentration phosphoric acid 1.8 are taken, is placed in clear Washing trough, it is now with the current;(2) clean:The corruption that the step (1) that the IC sheet stocks of silicon nitride coating to be removed are placed in rinse bath is prepared Lose in liquid, reaction time 1min, when IC sheet stocks surface is in that ash is dark-coloured, discharging is rinsed well, is transferred to lower road sodium hydroxide alkali cleaning work Sequence.
3. the method for silicon nitride coating in removal IC sheet stocks according to claim 1, it is characterised in that:
(1) corrosive liquid is prepared:55% concentration hydrofluoric acid 10,70% concentration nitric acid 1,85% concentration phosphoric acid 2 are taken, is placed in rinse bath, It is now with the current;(2) clean:The corrosive liquid that the step (1) that the IC sheet stocks of silicon nitride coating to be removed are placed in rinse bath is prepared In, in reaction time 1.5min, when IC sheet stocks surface is in that ash is dark-coloured, discharging is rinsed well, is transferred to lower road sodium hydroxide alkali cleaning process.
4. the method for silicon nitride coating in removal IC sheet stocks according to claim 1, it is characterised in that:
(1) corrosive liquid is prepared:55% concentration hydrofluoric acid 10.5,70% concentration nitric acid 1.1,85% concentration phosphoric acid 2.2 are taken, is placed in clear Washing trough, it is now with the current;(2) clean:The corruption that the step (1) that the IC sheet stocks of silicon nitride coating to be removed are placed in rinse bath is prepared Lose in liquid, reaction time 2min, when IC sheet stocks surface is in that ash is dark-coloured, discharging is rinsed well, is transferred to lower road sodium hydroxide alkali cleaning work Sequence.
CN201510043357.2A 2015-01-21 2015-01-21 A kind of method of silicon nitride coating in removal IC sheet stocks Active CN104637786B (en)

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CN104637786B true CN104637786B (en) 2018-02-27

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101698473A (en) * 2009-11-12 2010-04-28 江西赛维Ldk太阳能高科技有限公司 Recovery method of high-purity silicon nitride
CN101973552A (en) * 2010-09-21 2011-02-16 江西赛维Ldk太阳能高科技有限公司 Method for separating silicon from impurities
CN102247164A (en) * 2011-04-18 2011-11-23 华中科技大学 Method for manufacturing high-frequency acoustic self-focusing spherical probe
CN102818980A (en) * 2012-08-13 2012-12-12 安阳市凤凰光伏科技有限公司 Method for testing quality of silicon substrate in solar battery

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101698473A (en) * 2009-11-12 2010-04-28 江西赛维Ldk太阳能高科技有限公司 Recovery method of high-purity silicon nitride
CN101973552A (en) * 2010-09-21 2011-02-16 江西赛维Ldk太阳能高科技有限公司 Method for separating silicon from impurities
CN102247164A (en) * 2011-04-18 2011-11-23 华中科技大学 Method for manufacturing high-frequency acoustic self-focusing spherical probe
CN102818980A (en) * 2012-08-13 2012-12-12 安阳市凤凰光伏科技有限公司 Method for testing quality of silicon substrate in solar battery

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