CN104617377A - Dipolar oscillator antenna equipped with second isolating part and isolating rod - Google Patents
Dipolar oscillator antenna equipped with second isolating part and isolating rod Download PDFInfo
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- CN104617377A CN104617377A CN201510028452.5A CN201510028452A CN104617377A CN 104617377 A CN104617377 A CN 104617377A CN 201510028452 A CN201510028452 A CN 201510028452A CN 104617377 A CN104617377 A CN 104617377A
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- isolation part
- spacer bar
- oscillator
- element antenna
- sidewall
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Abstract
The invention belongs to the technical field of communication, and specifically relates to a dipolar oscillator antenna equipped with a second isolating part and an isolating rod. The dipolar oscillator antenna comprises a reflecting plate, and a plurality of oscillators arranged on the reflecting plate; each oscillator comprises two radiating units which are connected through a feeder and symmetrically arranged on top and bottom, and two radiation units which are connected through the feeder and symmetrically arranged to the left and right; each radiation unit comprises two oscillator sheets which are symmetrically arranged to the left and right; each oscillator sheet comprises a first sidewall, a first inclined arm which obliquely downwards extends from the top end of the first sidewall to another oscillator sheet, a second inclined arm which obliquely downwards extends from the bottom end of the first sidewall to another oscillator sheet, and a second sidewall which is connected with the free end of the second inclined wall and is arranged in parallel with the first sidewall. According to the dipolar oscillator antenna, the structural design is outstanding; the front-to-back ratio of minimum frequency points of single radiation unit is more than 30dB; the front-to-back ratio within the frequency band is averagely more than 32db; the average gain in the frequency band is more than 9.8dBi.
Description
Technical field
The present invention relates to a kind of communication technical field, be specifically related to a kind of bipolarity element antenna being provided with the second isolation part and spacer bar.
Background technology
Antenna a kind of high-frequency current is changed into radio wave transmission to space, while can collection space radio wave produce the device of high-frequency current.Antenna can regard the tuning circuit be made up of electric capacity and inductance as; This tuning circuit is at some Frequency point, and its capacitive and perception will be cancelled out each other, and circuit shows purely resistive, this phenomenon is referred to as resonance, and working frequency points corresponding to resonance phenomena is resonant frequency point, be in the energy of antenna resonant frequency point, its radiation characteristic is the strongest.And the antenna structure with resonance characteristic is called antenna oscillator, and the antenna structure of high-frequency current direct-drive is called active dipole, on the contrary be called parasitic element; In existing oscillator, use according to reality need to design antenna time, setting requirement is met in order to make the resonant frequency point of antenna, need to adjust the input impedance of antenna, the requirement of current communication standard still can not be met by the oscillator after adjustment and common oscillator, current communication standard is more and more higher, also more and more higher to the requirement of oscillator, and the gain of current oscillator, directivity, front and back are broken through than all needing to obtain.
Summary of the invention
The object of the invention is to overcome above-described shortcoming, the bipolarity element antenna being provided with the second isolation part and spacer bar of a kind of high-gain, good directionality is provided.
For achieving the above object, concrete scheme of the present invention is as follows: a kind of bipolarity element antenna being provided with the second isolation part and spacer bar, include reflecting plate, be provided with the multiple oscillators on reflecting plate, described oscillator includes laterally zygomorphic two radiating elements connected by feed line and symmetrical two radiating elements connected by feed line; Described each radiating element includes two the oscillator sheets be symmetrical set, described each oscillator sheet includes the first side wall, the first oblique arm extended obliquely to another oscillator sheet direction from the top of the first side wall, the second oblique arm of extending obliquely to another oscillator sheet direction from the bottom of the first side wall, also includes and is connected and the second sidewall be arranged in parallel with the first side wall with the free end of the second skew wall; The top of described second sidewall is extended with the 3rd skew wall obliquely to the first side wall direction, is connected with coupling bridge between the second sidewall of described two oscillator sheets; Feed arm is connected with between described two radiating elements.
Preferably, the outside of described the first side wall and the first skew wall junction is a fillet, and the radius of described fillet is 0.5mm-1mm.
Preferably, the radius of described fillet is 1mm.
Preferably, described first skew wall is provided with a vee, and the angle of described breach is 60 °-80 °.
Preferably, the angle of described breach is 70 °.
Preferably, the width of described the first side wall is 1.5cm-2cm.
Preferably, the free end of described first skew wall is provided with the first isolation part.
Preferably, the free end of described 3rd skew wall is provided with the 3rd isolation part.
Preferably, described first isolation part is silicon dioxide semiconductor.
Preferably, described 3rd isolation part is silicon dioxide semiconductor.
Preferably, described second sidewall is provided with the semicircular increasing aperture frequently of at least one side by side near the side of another oscillator sheet.
Preferably, described increasing frequency aperture quantity is 5-8.
Preferably, the described diameter increasing aperture is frequently 0.5mm-1mm.
Preferably, the bottom of described second skew wall is provided with the second isolation part.
Preferably, described second isolation part is silicon dioxide semiconductor.
Preferably, described second sidewall extends at least one spacer bar side by side away from the side of another oscillator sheet.
Preferably, described spacer bar quantity is three, and the length of described three spacer bars is successively decreased from the bottom up successively.
Preferably, the longest described spacer bar length is 10mm.
Preferably, described the first side wall is provided with a plurality of first rectangle via hole, and described two the first rectangle via holes are side by side one group;
Preferably, often arranged in parallel is organized; Described often group between the first rectangle via hole is provided with the second rectangle via hole, is filled with silicon dioxide semiconductor in described second rectangle via hole.
Preferably, the length of described second rectangle via hole is 2mm-5mm.
Beneficial effect of the present invention is: by excellent structural design, by constantly testing and under parameter adjustment, achieving excellent front and back specific characteristic, than being greater than 30dB before and after the minimum frequency of single radiating element of this antenna, is greater than 32dB before and after in frequency band than on average; And have higher module gain, according to data measured, as can be seen from directional diagram, its lowest frequency dot gains is greater than 9.37dBi, and in frequency band, average gain is greater than 9.8dBi.
Accompanying drawing explanation
Fig. 1 is front view of the present invention;
Fig. 2 is the front view of oscillator of the present invention;
Fig. 3 is the partial enlarged drawing of Fig. 2;
Fig. 4 be when frequency is 820MHZ before and after the experimental data figure of ratio;
Fig. 5 be when frequency is 850MHZ before and after the experimental data figure of ratio;
Fig. 6 be when frequency is 960MHZ before and after the experimental data figure of ratio;
Fig. 7 is the directional diagram representing gain when frequency is 820MHZ;
Fig. 8 is the directional diagram representing gain when frequency is 850MHZ;
Fig. 9 is the directional diagram representing gain when frequency is 960MHZ;
Description of reference numerals in Fig. 1 to Fig. 9:
A-reflecting plate; B-oscillator;
1-the first side wall; 11-first rectangle via hole; 12-second rectangle via hole;
2-first oblique arm; 21-first isolation part;
3-second oblique arm; 31-second isolation part;
4-second sidewall; 41-spacer bar; 42-increases aperture frequently;
5-the 3rd skew wall; 51-the 3rd isolation part;
6-feed arm; 61-feed line;
7-breach.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation, is not practical range of the present invention is confined to this.
As shown in Figures 1 to 9, a kind of bipolarity element antenna being provided with the second isolation part and spacer bar described in the present embodiment, include reflecting plate a, be provided with the multiple oscillator b on reflecting plate a, described oscillator b includes laterally zygomorphic two radiating elements connected by feed line 61 and symmetrical two radiating elements connected by feed line 61; Described each radiating element includes two the oscillator sheets be symmetrical set, described each oscillator sheet includes the first side wall 1, the first oblique arm 2 extended obliquely to another oscillator sheet direction from the top of the first side wall 1, the second oblique arm 3 of extending obliquely to another oscillator sheet direction from the bottom of the first side wall 1, also includes and to be connected with the free end of the second skew wall and the second sidewall 4 be arranged in parallel with the first side wall 1; The top of described second sidewall 4 is extended with the 3rd skew wall 5 obliquely to the first side wall 1 direction, is connected with coupling bridge between the second sidewall 4 of described two oscillator sheets; Feed arm 6 is connected with between described two radiating elements; By excellent structural design, by constantly testing and under parameter adjustment, finally determining this structure, excellent communication performance is all shown at 820MHZ to 960MHZ, concrete, than being greater than 30dB before and after the minimum frequency of single radiating element, before and after in frequency band, be greater than 32dB than on average; Low frequency dot gains is greater than 9.37dBi, and in frequency band, average gain is greater than 9.8dBi; As described in the experimental data of Fig. 4 to Fig. 9, achieve excellent front and back specific characteristic at 820MHZ to 960MHZ, wherein, when 820MHZ, as Fig. 3, than being 31.225dB before and after in its frequency band; When 850MHZ, as Fig. 5, than being 33.635dB before and after in its frequency band; When 960MHZ, as Fig. 6, than being 34.135dB before and after in its frequency band; And in gain, it is known that we analyze gain performance by bearing data figure, when 820MHZ, as Fig. 7, its gain is 9.3521dB; When 850MHZ, as Fig. 8, its gain is 9.721dB; When 960MHZ, as Fig. 9, its gain is 10.121dB.
A kind of bipolarity element antenna being provided with the second isolation part and spacer bar described in the present embodiment, the outside of described the first side wall 1 and the first skew wall junction is a fillet, and the radius of described fillet is 0.5mm-1mm; Described fillet effectively can strengthen the gain effect of high band, records by experiment, when its radius is 0.5mm-1mm, effectively can strengthen the gain effect of high band.
A kind of bipolarity element antenna being provided with the second isolation part and spacer bar described in the present embodiment, the radius of described fillet is 1mm; Preferably, when the radius of described fillet is 1mm, it effectively can strengthen the gain effect of high band, records by experiment, and its gain effect is maximum.
A kind of bipolarity element antenna being provided with the second isolation part and spacer bar described in the present embodiment, described first skew wall is provided with a vee 7, and the angle of described breach 7 is 60 °-80 °; When the angle of described breach 7 is 60 °-80 °, effectively can improves front and back ratio, record by experiment, when described in it, the angle of breach 7 is 60 °-80 °, front and back are better than effect.
A kind of bipolarity element antenna being provided with the second isolation part and spacer bar described in the present embodiment, the angle of described breach 7 is 70 °; When the angle of described breach 7 is 70 °, effectively can improves front and back ratio, record by experiment, when described in it, the angle of breach 7 is 70 °, front and back are more best than effect.
A kind of bipolarity element antenna being provided with the second isolation part and spacer bar described in the present embodiment, the width of described the first side wall 1 is 1.5cm-2cm; Record by experiment, it effectively can strengthen the gain effect of high band.
A kind of bipolarity element antenna being provided with the second isolation part and spacer bar described in the present embodiment, the free end of described first skew wall is provided with the first isolation part 21; Record by experiment, arranging the first isolation part 21 effectively can increase isolation, and isolation is at 30dB.
A kind of bipolarity element antenna being provided with the second isolation part and spacer bar described in the present embodiment, the free end of described 3rd skew wall 5 is provided with the 3rd isolation part 51; Record by experiment, arranging the 3rd isolation part 51 effectively can increase isolation, and isolation is at 30dB.
A kind of bipolarity element antenna being provided with the second isolation part and spacer bar described in the present embodiment, described first isolation part 21 is silicon dioxide semiconductor.When first isolation part 21 is silicon dioxide semiconductor, record by experiment, the isolation of the first isolation part 21 is maximum, and low-frequency range is all greater than 30dB.
A kind of bipolarity element antenna being provided with the second isolation part and spacer bar described in the present embodiment, described 3rd isolation part 51 is silicon dioxide semiconductor.When 3rd isolation part 51 is silicon dioxide semiconductor, record by experiment, the isolation of the second isolation part 31 is maximum, and low-frequency range is all greater than 30dB.
A kind of bipolarity element antenna being provided with the second isolation part and spacer bar described in the present embodiment, described second sidewall 4 is provided with at least one semicircular increasing aperture 42 frequently side by side near the side of another oscillator sheet; Cross experiment to record, it effectively can strengthen the gain effect of high band.
A kind of bipolarity element antenna being provided with the second isolation part and spacer bar described in the present embodiment, described increasing frequently aperture 42 quantity is 5-8; Experiment records, and when described increasing frequency aperture 42 quantity is 5-8, the gain effect of its high band is best.
A kind of bipolarity element antenna being provided with the second isolation part and spacer bar described in the present embodiment, the diameter of described increasing frequency aperture 42 is 0.5mm-1mm; Experiment records, and the described diameter increasing aperture 42 is frequently 0.5mm-1mm, and the gain effect of its high band is best.
A kind of bipolarity element antenna being provided with the second isolation part and spacer bar described in the present embodiment, the bottom of described second skew wall is provided with the second isolation part 31; Record by experiment, arranging the second isolation part 31 effectively can increase isolation, and isolation is at 32dB.
A kind of bipolarity element antenna being provided with the second isolation part and spacer bar described in the present embodiment, described second isolation part 31 is silicon dioxide semiconductor; Record by experiment, the isolation of the second isolation part 31 is maximum, and low-frequency range is all greater than 35dB.
A kind of bipolarity element antenna being provided with the second isolation part and spacer bar described in the present embodiment, described second sidewall 4 extends at least one spacer bar 41 side by side away from the side of another oscillator sheet; Record by experiment, arranging spacer bar 41 effectively can increase isolation.
A kind of bipolarity element antenna being provided with the second isolation part and spacer bar described in the present embodiment, described spacer bar 41 quantity is three, and the length of described three spacer bars 41 is successively decreased from the bottom up successively.By structural design like this, in the constantly central discovery of experiment, the structure of successively decreasing successively effectively can increase isolation, makes isolation effect more.A kind of bipolarity element antenna being provided with the second isolation part and spacer bar described in the present embodiment, the longest described spacer bar 41 length is 10mm.Isolation effect so can be made to reach best.
A kind of bipolarity element antenna being provided with the second isolation part and spacer bar described in the present embodiment: described the first side wall 1 is provided with a plurality of first rectangle via hole 11, described two the first rectangle via holes 11 are side by side one group; A kind of bipolarity element antenna being provided with the second isolation part and spacer bar described in the present embodiment, often organizes arranged in parallel; Described often group between the first rectangle via hole 11 is provided with the second rectangle via hole 12, is filled with silicon dioxide semiconductor in described second rectangle via hole 12.By this structural design, the electric current theoretical length flowing through the first side wall 1 can be made to increase, and realize the effect improving gain, arranged by this mode, its successful increased, gain is significantly increased.
A kind of bipolarity element antenna being provided with the second isolation part and spacer bar described in the present embodiment, the length of described second rectangle via hole 12 is 2mm-5mm.The structural design of this parameter, learns by experiment, its best results.By excellent structural design, by constantly testing and under parameter adjustment, achieving excellent front and back specific characteristic, than being greater than 30dB before and after the minimum frequency of single radiating element, before and after in frequency band, be greater than 32dB than on average; And have higher module gain, according to data measured, as can be seen from directional diagram, its lowest frequency dot gains is greater than 9.37dBi, and in frequency band, average gain is greater than 9.8dBi.
A kind of bipolarity element antenna being provided with the second isolation part and spacer bar described in the present embodiment, the distance of described 3rd isolation part 51 to the first side wall 1 is no less than 5mm.The width of described 3rd isolation part 51 is not less than 1mm.
The above is only a preferred embodiment of the present invention, therefore all equivalences done according to structure, feature and the principle described in patent claim of the present invention change or modify, and are included in the protection range of patent application of the present invention.
Claims (10)
1. one kind is provided with the bipolarity element antenna of the second isolation part and spacer bar, it is characterized in that: include reflecting plate, be provided with the multiple oscillators on reflecting plate, described oscillator includes laterally zygomorphic two radiating elements connected by feed line and symmetrical two radiating elements connected by feed line; Described each radiating element includes two the oscillator sheets be symmetrical set, described each oscillator sheet includes the first side wall, the first oblique arm extended obliquely to another oscillator sheet direction from the top of the first side wall, the second oblique arm of extending obliquely to another oscillator sheet direction from the bottom of the first side wall, also includes and is connected and the second sidewall be arranged in parallel with the first side wall with the free end of the second skew wall; The top of described second sidewall is extended with the 3rd skew wall obliquely to the first side wall direction, is connected with coupling bridge between the second sidewall of described two oscillator sheets; Feed arm is connected with between described two radiating elements;
The bottom of described second skew wall is provided with the second isolation part; Described second isolation part is silicon dioxide semiconductor;
Described second sidewall extends at least one spacer bar side by side away from the side of another oscillator sheet; Described spacer bar quantity is three, and the length of described three spacer bars is successively decreased from the bottom up successively; The longest described spacer bar length is 10mm.
2. a kind of bipolarity element antenna being provided with the second isolation part and spacer bar according to claim 1, it is characterized in that: the outside of described the first side wall and the first skew wall junction is a fillet, the radius of described fillet is 0.5mm-1mm.
3. a kind of bipolarity element antenna being provided with the second isolation part and spacer bar according to claim 2, is characterized in that: the radius of described fillet is 1mm.
4. a kind of bipolarity element antenna being provided with the second isolation part and spacer bar according to claim 1, is characterized in that: described first skew wall is provided with a vee, and the angle of described breach is 60 °-80 °.
5. a kind of bipolarity element antenna being provided with the second isolation part and spacer bar according to claim 4, is characterized in that: the angle of described breach is 70 °.
6. a kind of bipolarity element antenna being provided with the second isolation part and spacer bar according to claim 1, is characterized in that: the width of described the first side wall is 1.5cm-2cm.
7. a kind of bipolarity element antenna being provided with the second isolation part and spacer bar according to claim 1, is characterized in that: the free end of described first skew wall is provided with the first isolation part.
8. a kind of bipolarity element antenna being provided with the second isolation part and spacer bar according to claim 1, is characterized in that: the free end of described 3rd skew wall is provided with the 3rd isolation part.
9. a kind of bipolarity element antenna being provided with the second isolation part and spacer bar according to claim 7, is characterized in that: described first isolation part is silicon dioxide semiconductor.
10. a kind of bipolarity element antenna being provided with the second isolation part and spacer bar according to claim 8, is characterized in that: described 3rd isolation part is silicon dioxide semiconductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510028452.5A CN104617377A (en) | 2015-01-21 | 2015-01-21 | Dipolar oscillator antenna equipped with second isolating part and isolating rod |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510028452.5A CN104617377A (en) | 2015-01-21 | 2015-01-21 | Dipolar oscillator antenna equipped with second isolating part and isolating rod |
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| Publication Number | Publication Date |
|---|---|
| CN104617377A true CN104617377A (en) | 2015-05-13 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510028452.5A Pending CN104617377A (en) | 2015-01-21 | 2015-01-21 | Dipolar oscillator antenna equipped with second isolating part and isolating rod |
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| CN (1) | CN104617377A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107887691A (en) * | 2017-09-19 | 2018-04-06 | 东莞市松研智达工业设计有限公司 | A kind of dual-polarized antenna |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6025811A (en) * | 1997-04-21 | 2000-02-15 | International Business Machines Corporation | Closely coupled directional antenna |
| CN104064863A (en) * | 2014-07-01 | 2014-09-24 | 石松程 | Bipolar microstrip oscillator with isolating rods |
| CN203983468U (en) * | 2014-07-06 | 2014-12-03 | 宁波镇海弘润磁材科技有限公司 | The pentagon element antenna of high-gain band convergence breach |
| CN204011703U (en) * | 2014-04-26 | 2014-12-10 | 吕祥 | A kind of dual-polarized, microstrip oscillator with distance piece |
| CN204361249U (en) * | 2015-01-21 | 2015-05-27 | 象山星旗电器科技有限公司 | Be provided with the bipolarity element antenna of the second isolation part and spacer bar |
-
2015
- 2015-01-21 CN CN201510028452.5A patent/CN104617377A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6025811A (en) * | 1997-04-21 | 2000-02-15 | International Business Machines Corporation | Closely coupled directional antenna |
| CN204011703U (en) * | 2014-04-26 | 2014-12-10 | 吕祥 | A kind of dual-polarized, microstrip oscillator with distance piece |
| CN104064863A (en) * | 2014-07-01 | 2014-09-24 | 石松程 | Bipolar microstrip oscillator with isolating rods |
| CN203983468U (en) * | 2014-07-06 | 2014-12-03 | 宁波镇海弘润磁材科技有限公司 | The pentagon element antenna of high-gain band convergence breach |
| CN204361249U (en) * | 2015-01-21 | 2015-05-27 | 象山星旗电器科技有限公司 | Be provided with the bipolarity element antenna of the second isolation part and spacer bar |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107887691A (en) * | 2017-09-19 | 2018-04-06 | 东莞市松研智达工业设计有限公司 | A kind of dual-polarized antenna |
| CN107887691B (en) * | 2017-09-19 | 2019-08-16 | 清研讯科（北京）科技有限公司 | A kind of dual-polarized antenna |
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Application publication date: 20150513 |