CN104575611A - System for picosecond pulse test of device units of phase change memory - Google Patents
System for picosecond pulse test of device units of phase change memory Download PDFInfo
- Publication number
- CN104575611A CN104575611A CN201410804631.9A CN201410804631A CN104575611A CN 104575611 A CN104575611 A CN 104575611A CN 201410804631 A CN201410804631 A CN 201410804631A CN 104575611 A CN104575611 A CN 104575611A
- Authority
- CN
- China
- Prior art keywords
- pulse
- test
- pulse signal
- signal generator
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Memories (AREA)
Abstract
The invention relates to a system for a picosecond pulse test of device units of a phase change memory. The system comprises a main control computer, a picosecond pulse signal generator, a digital source meter and a device clamp box, wherein the main control computer is connected with the picosecond pulse signal generator and the digital source meter respectively; the picosecond pulse signal generator and the digital source meter are also connected with a biasing device in the device clamp box respectively; two probes of the device clamp box are connected with an upper electrode and a lower electrode of a tested phase change memory respectively to form a complete memory unit test connection loop; and the main control computer performs command and data transmission by virtue of control software to realize transmission of commands and acquisition of data. The system provided by the invention can be used for characterizing electrical and memory properties of the device units.
Description
Technical field
The present invention relates to the high-performance measuring technology of phase transformation memory device unit in micro-nano art of electronics, particularly relate to a kind of picosecond pulse test system of phase transformation memory device unit.
Background technology
Phase change memory technology is at late 1960s (Phys.Rev.Lett. based on Ovshinsky, 21,1450 ~ 1453,1968) beginning of the seventies (Appl.phys.lett., 18,254 ~ 257,1971) phase-change thin film proposed can be applied to that the conception of phase change memory medium sets up, and is the storage component part of a kind of low price, stable performance.Phase transition storage can be made on silicon substrates, and its critical material is recordable phase-change thin film, heating electrode material, thermal insulation material and extraction electrode material etc.The ultimate principle of phase transition storage utilizes electric impulse signal to act on device cell, make phase-change material, between amorphous state and polycrystalline state, reversible transition occur, by low-resistance when high resistant during resolution amorphous state and polycrystalline state, the write of information, erasing and read operation can be realized.
The reading and writing of phase transition storage, wiping operation apply voltage or the current pulse signal of different in width and height exactly on device cell: write operation (RESET), be elevated to after more than temperature of fusion when adding the phase-change material temperature in a short and strong pulse enable signal device cell, realize phase-change material polycrystalline state to amorphous conversion through quick cooling again, namely " 0 " state to " 1 " conversion of state; Wipe operation (SET), when the long and pulse enable signal phase-change material of medium tenacity of applying one is elevated to after on below temperature of fusion, Tc, and keep a period of time to impel nucleus growth, thus realize the conversion of amorphous state to polycrystalline state, namely one state is to the conversion of " 0 " state; Read operation, after adding the very weak pulse signal that a state to phase-change material can not have an impact, reads its state by the resistance value of measuring element unit.The pulse signal parameter of reading and writing, wiping operation needs to optimize.
In addition, the mechanism's great majority being engaged in phase transition storage R&D work at present are in the world major companies of semicon industry, its focus paid close attention to all concentrates on and realizes in the commercialization of phase transition storage how as early as possible, and therefore corresponding study hotspot also just launches around its device technology: reduction power consumption; Improve storage density and speed; Increase the serviceable life etc. of device, wherein the Problem of Failure of device cell is the principal element in its life-span of restriction, must further investigate, and its corresponding device cell fatigue properties test macro development is key point.Meanwhile, the realization of phase transition storage performance and sign directly perceived are also the committed steps in its study on the industrialization process.
Therefore, in order to promote the flow of research of respective memory, the sign of the electricity of its device cell and memory property (as threshold voltage and electric current, read/write/wiping operating parameter, fatigue properties etc.) is very important, but because phase transition storage is still in development at present, also there is no associated test system both at home and abroad.
Summary of the invention
Technical matters to be solved by this invention is to provide a kind of picosecond pulse test system of phase transformation memory device unit, can the electricity of characterizing device unit and memory property.
The technical solution adopted for the present invention to solve the technical problems is: the picosecond pulse test system providing a kind of phase transformation memory device unit, comprise main control computer, picopulse signal generator, digital sourcemeter and device clamp box, described main control computer is connected with digital sourcemeter with described picopulse signal generator respectively; Described picopulse signal generator and digital sourcemeter are also connected with the bias device in described device clamp box respectively; Two probes of described device clamp box connect top electrode and the bottom electrode of tested phase transition storage respectively, form a complete storage unit test link circuit; Described main control computer carries out order and data transmission by control software design, realizes the transmission of order and the collection of data.
Described main control computer realizes current-voltage test, voltage-to-current test, resistance by control software design and writes that arteries and veins height is tested, resistance and wiping arteries and veins are high tests.
The test of described current-voltage is the electric current corresponding to storage unit that the voltage pulse signal being sent amplitude increased gradually by testing software control figure source table measures tested phase transition storage.
The test of described voltage-to-current is the voltage corresponding to storage unit that the current pulse signal being sent amplitude increased gradually by function software control figure source table measures tested phase transition storage.
Described resistance is control picopulse signal generator by function software to send the pulse signal that pulse width is constant, pulse amplitude increases gradually or reduces with writing high test of arteries and veins, and pulse signal is applied on tested phase transition storage, then utilize digital sourcemeter to measure the resistance of tested phase transition storage by control software design.
Described resistance is control picopulse signal generator by function software to send the pulse signal that pulse width is constant, pulse amplitude increases gradually with wiping high test of arteries and veins, when wiping arteries and veins height and being fixing, the pulse signal utilizing the control software design order picopulse signal generator of main control computer to send pulsewidth to increase gradually or reduce, and pulse signal is applied on tested phase transition storage, then utilize digital sourcemeter to measure the resistance of tested phase transition storage by control software design.
Described main control computer is connected with digital sourcemeter with described picosecond pulse signal generator by gpib interface bus.
Bias device in described clamp box is connected with digital sourcemeter with pulse signal generator by control cables.
Beneficial effect
Owing to have employed above-mentioned technical scheme, the present invention compared with prior art, there is following advantage and good effect: the present invention is by electric current and voltage, voltage and electric current, the resistance in adjustment control operation software and write that arteries and veins is high, resistance and high four test modules of wiping arteries and veins, and coordinate the realizations such as pulse signal device, digital sourcemeter, device clamp box to operate the reversible transition of storage unit, read and write the electric properties such as wiping test, phase change operation window optimization and characterize.
Accompanying drawing explanation
Fig. 1 is the hardware configuration schematic diagram of device unit of phase change storage system;
Fig. 2 is the operational flowchart of device unit of phase change storage system;
Fig. 3 is the electric current of device unit of phase change storage system and the software flow pattern of voltage relationship or voltage and current relationship test module;
Fig. 4 is the resistance of device unit of phase change storage system and the software flow pattern writing/wipe high two test modules of arteries and veins;
Fig. 5 is the voltage-current curve graph of phase transformation memory device unit;
Fig. 6 is the resistance-write voltage arteries and veins height graph of relation of phase transformation memory device unit.
Embodiment
Below in conjunction with specific embodiment, set forth the present invention further.Should be understood that these embodiments are only not used in for illustration of the present invention to limit the scope of the invention.In addition should be understood that those skilled in the art can make various changes or modifications the present invention, and these equivalent form of values fall within the application's appended claims limited range equally after the content of having read the present invention's instruction.
Embodiments of the present invention relate to a kind of picosecond pulse test system of phase transformation memory device unit, be made up of main control computer, picopulse signal generator, digital sourcemeter and device clamp box, by gpib interface bus, main control computer is connected with digital sourcemeter with picosecond high-speed pulse signal generator, by control cables, pulse signal generator is connected with the bias device in clamp box with digital sourcemeter.Main control computer is stuck between pulse signal generator and digital sourcemeter by GPIB and carries out the transmission of order and the collection of data.Two probes of device clamp box connect top electrode and the bottom electrode of tested phase transition storage respectively, form a complete storage unit test link circuit.
Test module in adjustment control operation software, and coordinate pulse signal device, digital sourcemeter, device clamp box etc. to realize operate the reversible transition of storage unit, read and write the electric properties such as wiping test, fatigue properties, phase change operation window optimization and characterize.The concrete function of device unit of phase change storage system components is as follows:
1) main control computer mainly carries out order and data transmission by control software design, realize the transmission of order and the collection of data, with control wave generator and digital sourcemeter, be connected with the probe in clamp box by bias device again, realize writing/wiping and associated electrical performance test phase transformation memory device unit.
2) pulse signal generator is that single produces pulse signal.The height of voltage pulse signal is 0-7.5V, and the width of pulse signal is 100ps-10ns.
3) the current signal scope that digital sourcemeter provides is Current adjustment scope is 1pA-3.03A, and voltage signal scope is 1 μ A-40.4V.
4) device clamp box inside includes bias device and signal probe, and wherein, bias device is used for sample signal and switches, and signal probe is for connecting storage unit.
The different content measurement of described memory cell test macro is by corresponding function software module control realization, function software module mainly comprises current-voltage test module, voltage-to-current test module, resistance and writes four test modules such as arteries and veins height test module, resistance and sassafras arteries and veins height test module, and the process flow diagram of function software as shown in Figure 2.In process control module, first the parameter of sample is inputted, then judge that whether the parameter of sample is reasonable, if unreasonable need re-enter, if rationally, select corresponding testing experiment, then input test test the parameter of required pulse producer and the parameter of digital sourcemeter, again judge that whether input parameter is reasonable, if unreasonable need re-enter, otherwise start corresponding test module, data control block is entered after corresponding test module terminates, the data recorded are drawn and edits, then the test data of gained is preserved, whole experiment terminates.The major function of each module is as follows:
A the current-voltage test module described in () is exactly measure the now corresponding electric current of storage unit by the voltage pulse signal that testing software control figure source table sends amplitude and increases gradually, be converted into corresponding heat energy due to the voltage that increases gradually by storage unit thus promote the nucleus growth of phase-change material in storage unit, achieve phase-change material from amorphous state to the conversion of polycrystalline state, because the significant difference of amorphous and polycrystalline resistor just shows two sections of curves that has obvious Different Slope on current-voltage curve, threshold voltage and the electric current of phase-change memory device can be studied by this test curve, resistance characteristic before and after phase transformation.The process flow diagram of the experiment control module of its software as shown in Figure 3.After entering experiment control module, first pulse signals generator and digital sourcemeter carry out initialization, then operate bias device and sample probe connection is switched to pulse signal generator, then operating impulse signal generator is once write sample or is wiped operation, ensures that the initial state of sample is amorphous state or polycrystalline state.Then test loop is entered, first operate bias device and sample is switched to digital sourcemeter, operand word source table records required data, finally judges whether circulation terminates, if do not terminate, continue test, otherwise terminate test and all data encasement recorded by transferring to data control block process.
B the voltage-to-current test module described in () is exactly measure the now corresponding voltage of storage unit by the current pulse signal that function software control figure source table sends amplitude and increases gradually, be converted into corresponding heat energy due to the electric current that increases gradually by storage unit thus promote the nucleus growth of phase-change material in storage unit, achieve the conversion of phase-change material from amorphous to polycrystalline, because the significant difference of amorphous and polycrystalline resistor just shows two sections of curves that has obvious Different Slope on current-voltage curve, threshold voltage and the electric current of phase-change memory device can be studied by this test curve, resistance characteristic before and after phase transformation.The process flow diagram of the experiment control module of its software as shown in Figure 3.First pulse signals generator and digital sourcemeter carry out initialization, then operate bias device and sample is switched to pulse signal generator, then operating impulse signal generator is once write sample or is wiped operation, ensures initial amorphous or the polycrystalline state of sample.Then test loop is entered, first operate bias device and sample is switched to digital sourcemeter, then operand word source table records required data, finally judges whether circulation terminates, do not terminate to continue test, otherwise all data encasement recorded by data control block process.
C the resistance described in () and the test module writing arteries and veins high relation send pulse width by function software control wave generator exactly constant, the pulse signal that pulse height increases gradually or reduces, and pulse signal is applied on sample, then utilize digital sourcemeter to measure the resistance of sample by control software design, and record, show and preserve the resistance of sample-write arteries and veins height curve.Because the pulse signal increased highly is gradually converted into heat energy by storage unit, the temperature of phase-change material is impelled to be increased to more than melting temperature, through cooling the nucleus growth preventing phase-change material in storage unit fast, when arteries and veins high (i.e. pulse amplitude) is increased to certain time, realize the sharply change of phase-change material resistance from low-resistance to high resistant, then pulse height now writes the high optimized parameter of arteries and veins just.Power consumption when realizing the height of pulse less The devices function when resistance sharply changes is lower, thus is conducive to the research of the power consumption of the device of the different materials of different structure.The process flow diagram of its software experimentation control module as shown in Figure 4.First pulse signals generator and digital sourcemeter carry out initialization, and then operate bias device and sample is switched to pulse signal generator, operating impulse signal generator once wipes operation to sample again, ensures the initial polycrystalline state of sample.Then test loop is entered, operating impulse signal generator carries out a write operation, again operate bias device and sample is switched to digital sourcemeter, the resistance value write tested by operand word source table, then sample is switched to pulse signal generator, whether last discriminating test circulation terminates, if do not terminated, continues test, otherwise all test datas are prepared by data control block process.Wherein pulse height increases gradually along with each circulation.
D the resistance described in () is exactly send by function software control wave generator the pulse signal that pulse width is constant, pulse height increases gradually with the test module of wiping arteries and veins high relation.When wiping arteries and veins height and being fixing, the pulse signal utilizing the corresponding control software design command pulse signal source of computer for controlling to send pulsewidth to increase gradually or reduce, and pulse signal is applied on sample, then utilize digital sourcemeter to measure the resistance of sample by control software design, and record, show and preserve the resistance-wiping pulsewidth curve of sample.The pulse signal increased highly is gradually converted into the heat energy increased gradually by storage unit, then the temperature of phase-change material is also increasing gradually, realize the conversion of phase-change material from amorphous to polycrystalline when the temperature of phase-change material is increased to more than the following Tc of temperature of fusion, the pulse height when realizing phase-change material resistance and changing from high resistant to low-resistance wipes the optimized parameter of pulse just.Power consumption when realizing the less then devices function of height of pulse during resistance variations is lower, thus is conducive to the research of the power consumption of the device of the different materials of different structure.The process flow diagram of its software as shown in Figure 4.First pulse signals generator and digital sourcemeter carry out initialization, and then operate bias device and sample is switched to pulse signal generator, operating impulse signal generator carries out a write operation to sample again, ensures the initial amorphous state of sample.Then test loop is entered, operating impulse signal generator once wipes operation, again operate bias device and sample is switched to digital sourcemeter, the resistance value of nuzzling up tested by operand word source table, then sample is switched to pulse signal generator, whether last discriminating test circulation terminates, if do not terminated, continues test, otherwise all test datas are prepared by data control block process.Wherein pulse height increases gradually along with each circulation.
The software operation process of above-mentioned device unit of phase change storage system, be exactly first choose the module that will test, then entering apparatus parameter, pulse parameter and test parameter, by button, omnidistance control is carried out to the beginning in operating process, time-out, end again, finally the data of test and curve are all saved.In sum, device unit of phase change storage system of the present invention, and the performance test of phase transformation memory device unit that the test macro described in utilizing carries out, judge whether phase transformation memory device unit there occurs phase transformation by measuring current-voltage curve; Polycrystalline state (" 0 " state) or amorphous state (one state) by measuring the state of resistance decision device unit of phase transformation memory device unit; Determine best to write wiping pulse parameter by the relation of test resistance and pulse signal width and height.
The present invention is further illustrated below with two specific embodiments.
Embodiment 1
Test macro is made up of main control computer, picopulse signal generator, digital sourcemeter, high-speed oscilloscope and device clamp box, by gpib interface bus, main control computer is connected with digital sourcemeter with picosecond high-speed pulse signal generator, by control cables, pulse signal generator is connected with the bias device in clamp box with digital sourcemeter.Main control computer is stuck between pulse signal generator and digital sourcemeter by GPIB and carries out the transmission of order and the collection of data.Two probes of device clamp box connect top electrode and the bottom electrode of phase transition storage respectively, form a complete storage unit test link circuit.Electric current and voltage, voltage and electric current, resistance in adjustment control operation software and write that arteries and veins is high, resistance and high four test modules of wiping arteries and veins, and coordinate the realizations such as pulse signal device, digital sourcemeter, device clamp box to operate the reversible transition of storage unit, read and write the electric properties such as wiping test, phase change operation window optimization and characterize.
Adopt the voltage-to-current test module of above-mentioned test macro can test the voltage-current curve of phase transformation memory device unit.Concrete method of testing is as follows: the current pulse signal being sent amplitude increased gradually by function software control figure source table measures the now corresponding voltage of storage unit, voltage tester scope is 0-20V, the stepping that electric current increases is 0.005 μ A, records corresponding voltage and current numerical value and can obtain voltage-current curve (as shown in Figure 5).Be converted into corresponding heat energy due to the electric current that increases gradually by storage unit thus promote the nucleus growth of phase-change material in storage unit, achieve the conversion of phase-change material from amorphous to polycrystalline, due to the significant difference of amorphous and polycrystalline resistor, voltage-current curve just shows two sections of curves that has obvious Different Slope, the threshold voltage/current of phase-change memory device can be studied by this test curve, resistance characteristic before and after phase transformation, known by Fig. 5, in device cell, the critical phase time-dependent current of phase-change material generation crystallization is 60 μ A, critical phase time variant voltage is 1.05V.
Embodiment 2
Voltage-to-current test module used in embodiment 1 is changed into resistance and writes arteries and veins height test module, concrete test parameter is as follows: pulse current amplitude test specification is 0-7.5V, pulsewidth is 8000ps, all the other are identical with embodiment 1, record the high and resistance value of corresponding arteries and veins and can obtain resistance-arteries and veins height curve (as shown in Figure 6).Known by Fig. 6, when pulse amplitude is less than 4V, resistance is very low, and phase-change thin film is still in polycrystalline state, because phase-change material can not melt under less energy, therefore cannot obtain amorphous state.With the increase of pulse amplitude, resistance increases sharply, and illustrates that phase-change material melts, and changes the amorphous state of high-impedance state into.When pulse amplitude is greater than 4V, then amorphous state resistance is too large have been acted on for increasing to increase pulse amplitude, and illustrate for TST phase-change material, arteries and veins your pupil of 4V is to realize polycrystalline state to amorphous transformation.
Claims (8)
1. the picosecond pulse test system of a phase transformation memory device unit, comprise main control computer, picopulse signal generator, digital sourcemeter and device clamp box, it is characterized in that, described main control computer is connected with digital sourcemeter with described picopulse signal generator respectively; Described picopulse signal generator and digital sourcemeter are also connected with the bias device in described device clamp box respectively; Two probes of described device clamp box connect top electrode and the bottom electrode of tested phase transition storage respectively, form a complete storage unit test link circuit; Described main control computer carries out order and data transmission by control software design, realizes the transmission of order and the collection of data.
2. the picosecond pulse test system of phase transformation memory device unit according to claim 1, it is characterized in that, described main control computer realizes current-voltage test, voltage-to-current test, resistance by control software design and writes that arteries and veins height is tested, resistance and wiping arteries and veins are high tests.
3. the picosecond pulse test system of phase transformation memory device unit according to claim 2, it is characterized in that, the test of described current-voltage is the electric current corresponding to storage unit that the voltage pulse signal being sent amplitude increased gradually by testing software control figure source table measures tested phase transition storage.
4. the picosecond pulse test system of phase transformation memory device unit according to claim 2, it is characterized in that, the test of described voltage-to-current is the voltage corresponding to storage unit that the current pulse signal being sent amplitude increased gradually by function software control figure source table measures tested phase transition storage.
5. the picosecond pulse test system of phase transformation memory device unit according to claim 2, it is characterized in that, described resistance is control picopulse signal generator by function software to send the pulse signal that pulse width is constant, pulse amplitude increases gradually or reduces with writing high test of arteries and veins, and pulse signal is applied on tested phase transition storage, then utilize digital sourcemeter to measure the resistance of tested phase transition storage by control software design.
6. the picosecond pulse test system of phase transformation memory device unit according to claim 2, it is characterized in that, described resistance is control picopulse signal generator by function software to send pulse width constant with wiping that arteries and veins height tests, the pulse signal that pulse amplitude increases gradually, when wiping arteries and veins height and being fixing, the pulse signal utilizing the control software design order picopulse signal generator of main control computer to send pulsewidth to increase gradually or reduce, and pulse signal is applied on tested phase transition storage, then digital sourcemeter is utilized to measure the resistance of tested phase transition storage by control software design.
7. the picosecond pulse test system of phase transformation memory device unit according to claim 1, is characterized in that, described main control computer is connected with digital sourcemeter with described picosecond pulse signal generator by gpib interface bus.
8. the picosecond pulse test system of phase transformation memory device unit according to claim 1, is characterized in that, the bias device in described clamp box is connected with digital sourcemeter with pulse signal generator by control cables.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410804631.9A CN104575611A (en) | 2014-12-18 | 2014-12-18 | System for picosecond pulse test of device units of phase change memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410804631.9A CN104575611A (en) | 2014-12-18 | 2014-12-18 | System for picosecond pulse test of device units of phase change memory |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104575611A true CN104575611A (en) | 2015-04-29 |
Family
ID=53091483
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410804631.9A Pending CN104575611A (en) | 2014-12-18 | 2014-12-18 | System for picosecond pulse test of device units of phase change memory |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104575611A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110031741A (en) * | 2019-05-27 | 2019-07-19 | 江南大学 | A kind of step pulse test method of the semiconductor devices based on LabVIEW |
| CN110600068A (en) * | 2019-08-13 | 2019-12-20 | 中国科学院上海微系统与信息技术研究所 | Step pulse determination method, system and storage medium |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8094691B2 (en) * | 2004-12-07 | 2012-01-10 | Imra America, Inc. | Yb: and Nd: mode-locked oscillators and fiber systems incorporated in solid-state short pulse laser systems |
-
2014
- 2014-12-18 CN CN201410804631.9A patent/CN104575611A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8094691B2 (en) * | 2004-12-07 | 2012-01-10 | Imra America, Inc. | Yb: and Nd: mode-locked oscillators and fiber systems incorporated in solid-state short pulse laser systems |
Non-Patent Citations (2)
| Title |
|---|
| 盛俊杰: "相变随机存储器电特性测试方法研究", 《中国优秀硕士论文全文数据库》 * |
| 黄冬其: "相变存储器单元高速擦写测试方法研究", 《中国优秀硕士学位论文全文数据库》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110031741A (en) * | 2019-05-27 | 2019-07-19 | 江南大学 | A kind of step pulse test method of the semiconductor devices based on LabVIEW |
| CN110600068A (en) * | 2019-08-13 | 2019-12-20 | 中国科学院上海微系统与信息技术研究所 | Step pulse determination method, system and storage medium |
| CN110600068B (en) * | 2019-08-13 | 2021-06-04 | 中国科学院上海微系统与信息技术研究所 | Step pulse determination method, system and storage medium |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102290106B (en) | Device for testing phase change memory unit array | |
| CN1905077B (en) | System and method for testing device unit of phase change storage | |
| CN104090224B (en) | The on-line detecting system of a kind of power diode module working junction temperature and detection method | |
| CN102354537B (en) | Method for testing chip of phase change memory | |
| CN104848961A (en) | Saturation-conduction-voltage-drop-based temperature calibration platform for measuring IGBT junction temperature and method for realizing IGBT junction temperature measurement | |
| CN201653545U (en) | Photoelectric detector probe structure and irradiation uniformity tester using same | |
| CN108627753A (en) | A kind of IGBT on-line condition monitorings method and measuring system based on Miller platform time delay | |
| CN106969851A (en) | The on-line measuring device of IGBT power model junction temperatures is measured based on saturation voltage drop | |
| CN201681119U (en) | Data collecting system for electro-migration voltage at welding spot | |
| CN101783183B (en) | Current limiting circuit for testing performance index of resistive random access memory | |
| CN103605072B (en) | A kind of power device dynamic characteristic test circuit with thermoelectricity decoupling function and method of testing thereof | |
| CN102831935B (en) | Pulse I-V (intravenous) characteristic testing method and device of phase change memory unit | |
| CN105336378B (en) | Phase-change memory cell test structure and test method, phase transition storage | |
| CN206362890U (en) | Electronic power switch device junction temperature on-Line Monitor Device, detection circuit | |
| CN102759544A (en) | Method for testing thermal resistance of high-power silicon carbide diode | |
| CN104575611A (en) | System for picosecond pulse test of device units of phase change memory | |
| CN101763452B (en) | Simulation method of phase-change memory | |
| CN102539467A (en) | Method for analyzing crystallization rate and crystallization temperature of phase-change materials | |
| CN103616629B (en) | Full-automatic diode volt-ampere characteristic testing device | |
| CN202372224U (en) | Liquid level measuring device for liquid helium vessel | |
| CN203705070U (en) | Temperature-detecting device for power battery pack | |
| CN203455449U (en) | Test circuit used for intelligent power module | |
| CN103364739B (en) | A kind of node method for testing temperature rise of Switching Power Supply breaker in middle pipe | |
| CN107064781A (en) | A kind of simple resistor network automatic test approach | |
| CN201892741U (en) | Device for detecting electrical characteristics of smart meter security control module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150429 |