CN104570583A - Parameter optimization method in photomask manufacturing process - Google Patents
Parameter optimization method in photomask manufacturing process Download PDFInfo
- Publication number
- CN104570583A CN104570583A CN201410815064.7A CN201410815064A CN104570583A CN 104570583 A CN104570583 A CN 104570583A CN 201410815064 A CN201410815064 A CN 201410815064A CN 104570583 A CN104570583 A CN 104570583A
- Authority
- CN
- China
- Prior art keywords
- parameter
- experiment
- optimization method
- value
- parameters
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
Abstract
The embodiment of the invention discloses a parameter optimization method in a photomask manufacturing process. The parameter optimization method comprises the following steps: parameter selection; selecting at least three parameters influencing the photomask quality, assigning parameter values with predetermined amount to each of the parameters, so as to construct an orthogonal table for the experiment, and keeping the other parameters to be invariable; experiment: according to the orthogonal table, performing the experiment to obtain experimental results, and performing parameter design on the experimental results obtained from each experiment, and determining average signal/noise ratio, namely S/N, when each of the parameters is valued differently; drawing: according to the S/N, drawing an S/N effect diagram, and analyzing and predicting the optimized parameter combination through the S/N effect diagram. According to the parameter optimization method disclosed by the embodiment of the invention, the orthogonal table is utilized to select the representative experiment parameter combination to perform the experiment, so as to optimize the multiple parameters mainly influencing the precision of the photomask product, and determine the best technological parameter combination; the method is simple in optimization method, quick and effective; the manufacturing precision of the photomask product can be greatly improved.
Description
Technical field
The invention belongs to light shield manufacture technical field, relate to the parameter optimization method in a kind of light shield manufacture process.
Background technology
Light shield (Mask) needs through overexposure, development, etching and except the process such as glue in processing procedure process, and these processes are very large for the impact such as shape of the homogeneity of Product Precision, minimum line suture width values, lines.
Impact for Mask product has several factors, such as: focus on (Foucs) size, energy (Dose) size, critical size (Critical Dimension, CD) compensating value, development (Develop) time and etching (Etch) time etc., the change of each parameter can affect the final precision of product and line quality.And be all the numerical value provided based on supplier to the setting of these parameters usually, but more often than not, due to the uncertainty of supplied materials former material photoresist thickness, quality, performance, and often need test to use new photoetching collagen material, uncertain factor etc. artificial when the change of the equipment change faint along with the change of time itself, dust-free workshop temperature humidity and processing procedure, finally causes the quality of light shield product can not reach the requirement of expection.So light shield researchist needs to carry out strong adjustment to the technological parameter of equipment itself and processing procedure as the case may be timely, but be all the technological parameter being drawn the best of final new product by the experiment of a large amount of repeatability now substantially to the adjustment of these technological parameters, not only time-consuming but also require great effort, object can not be arrived within the limited time.
Summary of the invention
Embodiment of the present invention technical matters to be solved is, parameter optimization method in a kind of light shield manufacture process is provided, analysis is enumerated to the various influence factor of light shield product, thus fast and effeciently determines best combination of process parameters, improve the precision of light shield.
In order to solve the problems of the technologies described above, the embodiment of the present invention proposes the parameter optimization method in a kind of light shield manufacture process, and described method comprises:
Parameter choose step: choose the parameter that at least 3 kinds affect light shield quality, often kind of parameter gives a predetermined number parameter value, and to form experiment orthogonal arrage, other parameters keep immobilizing;
Experimental procedure: carry out experiment according to described orthogonal arrage and obtain experimental result, and carry out parameter designing to the result of each experiment, obtains the average signal-to-noise ratio value of each parameter when different value and S/N; And
Drawing step: draw S/N effect figure according to described S/N, dopes Optimal Parameters combination by the map analysis of described S/N effect.
Further, also comprise after described drawing step:
Verification step: whether carry out parameter combinations described in experimental verification best.
Further, described method adopts following formula to carry out the judgement of parameter value quality:
Wherein, δ
2represent and the quadratic sum of many group experimental results is averaged, n representative experiment multiplicity, n=1,2,3 ..., y
ntable experimental result; S/N is signal to noise ratio (S/N ratio) and described mean value δ
2inverse; Log (S/N) representative asks logarithm to signal to noise ratio (S/N ratio); η represents the experimental result after S/N nondimensionalization, by the quality of a size judgment experiment parameters value of η.
Further, often organize parameter in parameter choose step and once test, once test and at least measure the result of 2 groups of linear slit values as final this group experiment.
Further, the parameter affecting light shield quality selected in parameter choose step is at least 3 kinds in energy value, critical size compensating value, development time and etching period, often kind of parameter is imparted to few 3 parameter values, keeps other parameters changeless at least to comprise focus value, solution level.
Further, the parameter affecting light shield quality selected in parameter choose step is energy value, critical size compensating value, development time and etching period totally 4 kinds, and often kind of parameter gives 5 parameter values.
Further, described experimental procedure at least carries out exposing, develop, etch and remove glue operation.
Further, the experimental subjects that described method is corresponding to be AZ type photoresist size the be former material of soda of 5 cun.
Parameter optimization method in the light shield manufacture process of the embodiment of the present invention mainly utilizes orthogonal arrage to test to select representative experiment parameter combination, to be optimized the parameter of multiple major effect light shield Product Precision, and determine best combination of process parameters, there is simple, the quick and effective feature of optimization method, substantially increase the making precision of light shield product.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet of the parameter optimization method in the light shield manufacture process of the embodiment of the present invention.
Fig. 2 is the orthogonal schematic diagram of the embodiment of the present invention.
Fig. 3 is the orthogonal arrage L9 (3 of the Selecting All Parameters composition of the embodiment of the present invention
3).
Fig. 4 is the orthogonal arrage L25 (5 of the Selecting All Parameters composition of the embodiment of the present invention
4).
Fig. 5 is experimental technique parameter and the result table of the embodiment of the present invention.
Fig. 6 is the signal to noise ratio (S/N ratio) S/N mean value of each parameter linear slit precision when different value in Fig. 5.
Fig. 7 is the signal to noise ratio (S/N ratio) S/N effect figure drawn according to Fig. 6.
Fig. 8 is the comparison sheet of the lower linear slit accuracy value of different experiments scheme gained optimal procedure parameters combination.
Fig. 9 a, Fig. 9 b and Fig. 9 c are the SEM figure of embodiment of the present invention experiment gained light shield lines.
Embodiment
It should be noted that, when not conflicting, the embodiment in the application and the feature in embodiment can be combined with each other, and are described in further detail the present invention below in conjunction with the drawings and specific embodiments.
Embodiments provide the parameter optimization method in a kind of light shield manufacture process, use for reference Taguchi's method, utilize orthogonal arrage to select representative experiment parameter combination and carry out the alternative experiment comprehensively of experiment, only need experiment limited on a small quantity just can comform and find the parameter combinations of optimization in multiparameter, thus obtain best parameter, and can know that each parameter finally requires quality to light shield product affect size.
Please refer to Fig. 1, the embodiment of the present invention proposes the parameter optimization method in a kind of light shield manufacture process, and described method comprises: parameter choose step, experimental procedure and drawing step; As a kind of embodiment, after described drawing step, also comprise verification step.
Parameter choose step: choose the parameter that at least 3 kinds affect light shield quality, often kind of parameter gives a predetermined number parameter value, and to form experiment orthogonal arrage, other parameters keep immobilizing.Please refer to Fig. 2, is orthogonal schematic diagram.Wherein, A, B, C are respectively three coordinate axis, represent three kinds of different influence factors, and each influence factor intersects after getting different values respectively in solid space, and each intersection point comprises one group and chooses technological parameter.Please also refer to Fig. 3, be the orthogonal arrage L9 (3 of Selecting All Parameters composition
3).Wherein, A, B and C represent three kinds of different influence factors respectively, the parameter value that A1, A2, A3, B1, B2, B3, C1, C2 and C3 three of representing that each influence factor gets respectively are different.
For choosing three technological parameters, and each technological parameter gets the experiment of three values, if tested comprehensively, needs the experiment doing the combination of 3*3*3=27 kind, does not also comprise the multiplicity of each combination.Adopt the orthogonal arrage L9 (3 shown in Fig. 3
3) experiment arrangement only needs to do 9 times, greatly reduces experiment number.When technological parameter is more, when the value of each technological parameter is more, then experiment number is exponential growth comprehensively, and orthogonal greatly reduces workload.
The parameter affecting light shield quality selected in parameter choose step is at least 3 kinds in energy value, critical size compensating value, development time and etching period, often kind of parameter is imparted to few 3 parameter values, keeps other parameters changeless at least to comprise focus value, solution level.In present embodiment, the parameter affecting light shield quality selected in parameter choose step is energy value, critical size compensating value, development time and etching period totally 4 kinds, and often kind of parameter gives 5 parameter values; Experimental subjects adopts certain AZ type photoresist size to be the former material of soda of 5 cun, with the adjustment by many kinds of parameters, obtains the light shield product closest to design load.As shown in Figure 4, orthogonal arrage is L25 (5
4), need to carry out 25 groups of experiments.As shown in Figure 5, be experimental technique setting parameter table, often organize parameter and once test, the size of an experiment measuring 2 groups of linear slit values is as the result of final this group experiment.
Experimental procedure: carry out experiment according to described orthogonal arrage and obtain experimental result, and carry out parameter designing to the result of each experiment, obtains the average signal-to-noise ratio value of each parameter when different value and S/N.Wherein, described experimental procedure at least carries out exposing, develop, etch and remove glue operation.Preferably, following formula is adopted to carry out the judgement of parameter value quality in described experimental procedure:
Wherein, δ
2represent and the quadratic sum of many group experimental results is averaged, n representative experiment multiplicity, n=1,2,3 ..., y
ntable experimental result; S/N is signal to noise ratio (S/N ratio) and described mean value δ
2inverse; Log (S/N) representative asks logarithm to signal to noise ratio (S/N ratio); η represents the experimental result after S/N nondimensionalization, by the quality of a size judgment experiment parameters value of η.As shown in Figure 6, be the signal to noise ratio (S/N ratio) S/N mean value of each parameter linear slit precision when different value.
Drawing step: draw S/N effect figure according to described S/N, dopes Optimal Parameters combination by the map analysis of described S/N effect.Please refer to Fig. 7, is the signal to noise ratio (S/N ratio) S/N effect figure drawn according to Fig. 6.Wherein, " standard " lines represent the curve of standard under design load, and the longitudinal axis represents the value of S/N, and the S/N of linear slit precision when " A " " B " " C " and " D " lines represent different value.If more close with standard value, illustrate that this parameter is more suitable.Thus described drawing makes result more directly perceived, and more convenient and quicker ground confirms to obtain most suitable parameter.
Because all being combined in statistical significance in orthogonal arrage just represents comprehensive result of testing, can think that the combination of process parameters after prediction is optimal parameter combination thus.As shown in Figure 7, can predict from Fig. 7 and determine that optimal processing parameter combination is A3B5C5D5, namely Dose is 1000, CD is 500, Develop is 60, Etch is 90.
Fig. 8 is the comparison sheet of the lower linear slit accuracy value of different experiments scheme gained optimal procedure parameters combination, and scheme one is comprehensive experimental program, the scheme of scheme two embodiment of the present invention.Wherein, design load and signal to noise ratio (S/N ratio) S/N standard are defined as: experimental design linear slit value size is 2.6 μm, can obtain according to above-mentioned formulae discovery, its standard signal to noise ratio (S/N ratio) S/N=-8.30, the combination chosen in the signal to noise ratio (S/N ratio) S/N value namely calculated at comprehensive experimental program closest to standard value is defined as the optimal parameter combination of corresponding experiment comprehensively.
As can be seen from Figure 8, prepared by the combination of prediction optimal parameter, light shield linear slit precision is out 2.64, obviously to be better than light shield linear slit precision 2.52 in scheme one, please also refer to Fig. 9 a, Fig. 9 b and Fig. 9 c, for the SEM figure of experiment gained light shield lines, respectively illustrate entirety and the section local pattern of light shield, the quality of the light shield product lines as can be seen from the figure utilizing the method for the embodiment of the present invention to make is better, and lines precision and design load are closely.
As a kind of embodiment, also comprise verification step after described drawing step, verification step: whether carry out parameter combinations described in experimental verification best; If fruit checking is not optimal parameter combination, again operate from parameter choose step, until obtain best technique to make parameter combinations.And then making to predict the outcome by the checking of verification step has more practicality, more reliably.
When facing the various unusual conditions occurred in light shield manufacturing process, the situations such as such as precision exceeds standard, overall length exceeds standard or plant capacity is not enough, or new glue-type uses without when to start with, when needing to regulate multiple technological parameter, the method for the embodiment of the present invention is adopted to do great many of experiments relative to traditional just to obtain the method for optimal processing parameter combination easier and reliable.
In sum, the parameter optimization method in the light shield manufacture process of the embodiment of the present invention only needs experiment limited on a small quantity can fast and effeciently select correct combination of process parameters, thus reaches the result consistent with design load, meets the requirement of client; Utilize the method can obtain new material fast and effectively simultaneously and manufacture the problems such as the accuracy error that occurs in process; And can know that, in numerous technological parameter, what each technological parameter finally required light shield quality affects size by variance analysis, be beneficial to light shield researcher and carry out convenient for light shield product and in depth study.
Although illustrate and describe embodiments of the invention, for the ordinary skill in the art, be appreciated that and can carry out multiple change, amendment, replacement and modification to these embodiments without departing from the principles and spirit of the present invention, scope of the present invention is limited by claims and equivalency range thereof.
Claims (8)
1. the parameter optimization method in light shield manufacture process, is characterized in that, described method comprises:
Parameter choose step: choose the parameter that at least 3 kinds affect light shield quality, often kind of parameter gives a predetermined number parameter value, and to form experiment orthogonal arrage, other parameters keep immobilizing;
Experimental procedure: carry out experiment according to described orthogonal arrage and obtain experimental result, and carry out parameter designing to the result of each experiment, obtains the average signal-to-noise ratio value of each parameter when different value and S/N; And
Drawing step: draw S/N effect figure according to described S/N, dopes Optimal Parameters combination by the map analysis of described S/N effect.
2. parameter optimization method as claimed in claim 1, is characterized in that, also comprise after described drawing step:
Verification step: whether carry out parameter combinations described in experimental verification best.
3. parameter optimization method as claimed in claim 1, it is characterized in that, described method adopts following formula to carry out the judgement of parameter value quality:
Wherein, δ
2represent and the quadratic sum of many group experimental results is averaged, n representative experiment multiplicity, n=1,2,3 ..., y
ntable experimental result; S/N is signal to noise ratio (S/N ratio) and described mean value δ
2inverse; Log (S/N) representative asks logarithm to signal to noise ratio (S/N ratio); η represents the experimental result after S/N nondimensionalization, by the quality of a size judgment experiment parameters value of η.
4. parameter optimization method as claimed in claim 1, is characterized in that, often organize parameter and once test in parameter choose step, once tests and at least measures the result of 2 groups of linear slit values as final this group experiment.
5. parameter optimization method as claimed in claim 1, it is characterized in that, the parameter affecting light shield quality selected in parameter choose step is at least 3 kinds in energy value, critical size compensating value, development time and etching period, often kind of parameter is imparted to few 3 parameter values, keeps other parameters changeless at least to comprise focus value, solution level.
6. parameter optimization method as claimed in claim 5, is characterized in that, the parameter affecting light shield quality selected in parameter choose step is energy value, critical size compensating value, development time and etching period totally 4 kinds, and often kind of parameter gives 5 parameter values.
7. parameter optimization method as claimed in claim 1, is characterized in that, described experimental procedure at least carries out exposing, develop, etch and remove glue operation.
8. the parameter optimization method according to any one of claim 1 to 7, is characterized in that, experimental subjects corresponding to described method to be AZ type photoresist size the be former material of soda of 5 cun.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410815064.7A CN104570583A (en) | 2014-12-24 | 2014-12-24 | Parameter optimization method in photomask manufacturing process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410815064.7A CN104570583A (en) | 2014-12-24 | 2014-12-24 | Parameter optimization method in photomask manufacturing process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104570583A true CN104570583A (en) | 2015-04-29 |
Family
ID=53087015
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410815064.7A Pending CN104570583A (en) | 2014-12-24 | 2014-12-24 | Parameter optimization method in photomask manufacturing process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104570583A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106274069A (en) * | 2015-05-21 | 2017-01-04 | 上海超铂信息系统技术有限公司 | A kind of mark processing technique method of testing and system |
| CN110785832A (en) * | 2017-07-27 | 2020-02-11 | 株式会社斯库林集团 | Parameter design support device and parameter design support method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002099072A (en) * | 2000-09-26 | 2002-04-05 | Dainippon Printing Co Ltd | Method of manufacturing photomask |
| CN1692311A (en) * | 2003-02-17 | 2005-11-02 | 索尼株式会社 | Mask correcting method |
| CN103258082A (en) * | 2013-04-17 | 2013-08-21 | 西安工程大学 | Optimization method of production parameters for solid ground curing rapid prototyping system |
-
2014
- 2014-12-24 CN CN201410815064.7A patent/CN104570583A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002099072A (en) * | 2000-09-26 | 2002-04-05 | Dainippon Printing Co Ltd | Method of manufacturing photomask |
| CN1692311A (en) * | 2003-02-17 | 2005-11-02 | 索尼株式会社 | Mask correcting method |
| CN103258082A (en) * | 2013-04-17 | 2013-08-21 | 西安工程大学 | Optimization method of production parameters for solid ground curing rapid prototyping system |
Non-Patent Citations (2)
| Title |
|---|
| 张春飞 等: "基于田口法的高速切削参数优化研究与应用", 《现代制造工程》 * |
| 胡广荣 等: "掩模特征尺寸稳定性工艺控制", 《江苏电器》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106274069A (en) * | 2015-05-21 | 2017-01-04 | 上海超铂信息系统技术有限公司 | A kind of mark processing technique method of testing and system |
| CN110785832A (en) * | 2017-07-27 | 2020-02-11 | 株式会社斯库林集团 | Parameter design support device and parameter design support method |
| CN110785832B (en) * | 2017-07-27 | 2023-09-08 | 株式会社斯库林集团 | Parameter design support device and parameter design support method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4666918B2 (en) | Design-driven inspection or measurement | |
| CN101413791B (en) | Determining profile parameters of a structure using approximation and fine diffraction models in optical metrology | |
| CN101996855B (en) | Wafer defect analysis method | |
| JP2009075110A (en) | Determination of profile parameter of structure using dispersion function for making process parameter associate with dispersion | |
| CN103855045B (en) | The method for repairing and regulating of chip parameter on wafer | |
| CN101183399B (en) | Method for analyzing and increasing yield of semi-conductor production line | |
| CN104062305B (en) | A kind of analysis method of integrated circuit defect | |
| JP2015180953A (en) | Substrate matrix to decouple tool and process effects | |
| CN105702595B (en) | The yield judgment method of wafer and the changeable quantity measuring method of wafer conformity testing | |
| US8938695B1 (en) | Signature analytics for improving lithographic process of manufacturing semiconductor devices | |
| CN107885028B (en) | Method for determining sub-resolution auxiliary graph in OPC modeling | |
| CN105891321A (en) | Calibration method for micromagnetic detection of ferromagnetic material structural mechanics performance | |
| JP2010231338A (en) | Apparatus and method for analyzing factor | |
| CN104570583A (en) | Parameter optimization method in photomask manufacturing process | |
| KR102447609B1 (en) | Computer-assisted weak pattern detection and quantification system | |
| CN100539119C (en) | The formation method of test base, test base mask and test base | |
| CN107045259B (en) | Mask plate containing monitoring pattern and monitoring method | |
| KR20200096992A (en) | Semiconductor measurement and defect classification using electron microscope | |
| CN109858699B (en) | Water quality quantitative simulation method and device, electronic equipment and storage medium | |
| US10222710B2 (en) | Method and system for planning metrology measurements | |
| CN108052727B (en) | Estimation method for gate capacitance statistical distribution caused by metal gate work function change | |
| CN115910190B (en) | Chip yield prediction method and device and computer readable storage medium | |
| JP2015220379A (en) | Potential failure detecting device, method and program for integrated circuit device | |
| US20230160960A1 (en) | Semiconductor substrate yield prediction based on spectra data from multiple substrate dies | |
| Selvaraj et al. | Skip-lot sampling plan of type SkSP-T for life testes based on percentiles of exponentiated Rayleigh distribution |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150429 |
|
| RJ01 | Rejection of invention patent application after publication |