CN104559801A - High-temperature bonding wax for pressuring polish of silicon wafer and preparation method of high-temperature bonding wax - Google Patents
High-temperature bonding wax for pressuring polish of silicon wafer and preparation method of high-temperature bonding wax Download PDFInfo
- Publication number
- CN104559801A CN104559801A CN201310517895.1A CN201310517895A CN104559801A CN 104559801 A CN104559801 A CN 104559801A CN 201310517895 A CN201310517895 A CN 201310517895A CN 104559801 A CN104559801 A CN 104559801A
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- CN
- China
- Prior art keywords
- wax
- high temperature
- silicon chip
- cera flava
- gum resin
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/06—Other polishing compositions
- C09G1/08—Other polishing compositions based on wax
- C09G1/10—Other polishing compositions based on wax based on mixtures of wax and natural or synthetic resin
Abstract
The invention discloses high-temperature bonding wax for pressuring polish of a silicon wafer. The wax is prepared from the following components in percentage by mass: 35-45% of gum rosin, 25-35% of rosin ester, 20-30% of Chinese insect wax and 4-6% of beeswax. By adopting the high-temperature bonding wax for pressuring polish of the silicon wafer provided by the invention, the production cost is lowered, the wax can be used at different environmental temperatures, the wafer is not deviated under a press polish condition, and meanwhile, the wax is convenient to remove and easy to clean.
Description
Technical field
The present invention relates to a kind of high temperature bond wax field, be specifically related to a kind of for silicon chip press polished high temperature bond wax.
Background technology
All on sale on the polishing bonding wax market of current various trade mark high/low temperature, but existing market is applicable to press polished high temperature wax, and after polishing, paraffin removal is more difficult, all than the cleaning of low-temperature wax difficulty, because added synthetic wax in high temperature wax, as PE wax, hot melt adhesive.Meanwhile, because high temperature wax is firmly more crisp, when envrionment temperature is low, easily come unstuck, need to change low-temperature wax.In addition, market is bought high temperature wax cost high.
Bonding wax in existing production technique activity, mostly when press polish is generated heat, silicon wafer polishing easily occurs to run sheet, affects quality product.
Therefore, one can be applicable to varying environment temperature, reduces production cost, and paraffin removal is convenient, is convenient to cleaning, and urgently occurring for silicon chip press polished high temperature bond wax of sheet is not run in polishing pressurization.
Summary of the invention
For solving the problems of the technologies described above, the object of the present invention is to provide one can be applicable to varying environment temperature, reducing production cost, paraffin removal is convenient, is convenient to cleaning, polishing pressurization do not run sheet for silicon chip press polished high temperature bond wax.
For achieving the above object, technical scheme of the present invention is as follows: a kind of for silicon chip press polished high temperature bond wax, comprises the component of following mass percent: the gum resin of 35%-45%, the rosin fat of 25%-35%, the river wax of 20%-30% and the cera flava of 4%-6%.
Preferably, described for silicon chip press polished high temperature bond wax, comprise the component of following mass percent: the gum resin of 38%-42%, the rosin fat of 28%-32%, the river wax of 24%-26% and the cera flava of 4.5%-5.5%.
Preferably, described for silicon chip press polished high temperature bond wax, comprise the component of following mass percent: the gum resin of 40%, the rosin fat of 30%, the river wax of 25% and the cera flava of 5%.
Present invention also offers a kind of for the waxed Preparation Method of silicon chip press polished high temperature bond, specifically comprise the steps:
(1) gum resin and rosin fat are first put in Stainless Steel Kettle in proportion, 800W electric furnace heats, after gum resin and rosin fat all melt, put into river wax and cera flava, wait river wax and cera flava also to melt, fully stir evenly with spoon after lather collapse;
(2) filter with 8 layers of hospital gauze;
(3) pour into again in sizeable fluoroplastics box, can take out after cooling.
Pass through technique scheme, the beneficial effect of technical solution of the present invention is: a kind of for silicon chip press polished high temperature bond wax, comprises the component of following mass percent: the gum resin of 35%-45%, the rosin fat of 25%-35%, the river wax of 20%-30% and the cera flava of 4%-6%; Adopt and provided by the present inventionly reduce production cost for silicon chip press polished high temperature bond wax, can use at different ambient temperatures, can not run sheet at press polish situation lower silicon slice, paraffin removal is convenient and easily clean simultaneously.
Embodiment
Be clearly and completely described to the technical scheme in the embodiment of the present invention below, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the present invention.
The invention discloses one and can be applicable to varying environment temperature, reduce production cost, paraffin removal is convenient, is convenient to cleaning, polishing pressurization do not run sheet for silicon chip press polished high temperature bond wax.
Embodiment 1,
A kind of for silicon chip press polished high temperature bond wax, comprise the component of following mass percent: the gum resin of 35%, the rosin fat of 35%, the river wax of 24% and the cera flava of 6%.
In the technical program, utilize gum resin softening temperature moderate, at 72 ~ 76 DEG C, make the base material of bonding wax; Utilize the characteristic of abietinic pressure-sensitive adhesive and high softening-point (90 ~ 100 DEG C), improve the bonding high temperature of wax and pressurized operation condition adaptability.
The performance of river wax be not yielding, coagulative power strong, avoid bubble to occur, can improve the cohesiveness of bonding wax, reduces the bubble of tack coat when gluing silicon chip; Utilize that the tackiness of cera flava and transmissibility are strong, low temperature extends the strong feature of ability, make bonding wax use not embrittlement to come unstuck at low ambient temperatures, increase the homogeneity of wax layer and the extrusion performance of redundant paraffin power simultaneously.
Present invention also offers a kind of for the waxed Preparation Method of silicon chip press polished high temperature bond, specifically comprise the steps:
(1) gum resin and rosin fat are first put in Stainless Steel Kettle in proportion, 800W electric furnace heats, after gum resin and rosin fat all melt, put into river wax and cera flava, wait river wax and cera flava also to melt, fully stir evenly with spoon after lather collapse;
(2) filter with 8 layers of hospital gauze;
(3) pour into again in sizeable fluoroplastics box, can take out after cooling.
The proportioning of technique scheme and the above-mentioned preparation method provided are provided, the high temperature bond wax produced, convenient self-control, be applicable to the high temperature silicon chip optics press polish bonding wax used throughout the year, use under can being applicable to varying environment temperature, and the silicon wafer polishing that can bear 2kg/mm2 pressure does not run sheet; Meanwhile, it is convenient that these 4 kinds of materials of gum resin, rosin fat, river wax, cera flava are bought, and average price is 20% of finished product high temperature bond wax on market, can reduce production cost; In addition, paraffin removal facilitates and cleans easily, dissolves rapidly in agent for carbon hydrogen detergent.
Embodiment 2,
All the other are same as the previously described embodiments, and difference is, a kind of for silicon chip press polished high temperature bond wax, comprise the component of following mass percent: the gum resin of 45%, the rosin fat of 25%, the river wax of 26% and the cera flava of 4%.
Embodiment 3,
All the other are same as the previously described embodiments, and difference is, a kind of for silicon chip press polished high temperature bond wax, comprise the component of following mass percent: the gum resin of 45%, the rosin fat of 29%, the river wax of 20% and the cera flava of 6%.
Embodiment 4,
All the other are same as the previously described embodiments, and difference is, a kind of for silicon chip press polished high temperature bond wax, comprise the component of following mass percent: the gum resin of 45%, the rosin fat of 21%, the river wax of 30% and the cera flava of 4%.
Embodiment 5,
All the other are same as the previously described embodiments, and difference is, a kind of for silicon chip press polished high temperature bond wax, comprise the component of following mass percent: the gum resin of 38%, the rosin fat of 32%, the river wax of 24.5% and the cera flava of 5.5%.
Embodiment 6,
All the other are same as the previously described embodiments, and difference is, a kind of for silicon chip press polished high temperature bond wax, comprise the component of following mass percent: the gum resin of 42%, the rosin fat of 28%, the river wax of 25.5% and the cera flava of 4.5%.
Embodiment 7,
All the other are same as the previously described embodiments, and difference is, a kind of for silicon chip press polished high temperature bond wax, comprise the component of following mass percent: the gum resin of 38.5%, the rosin fat of 32%, the river wax of 24% and the cera flava of 5.5%.
Embodiment 8,
All the other are same as the previously described embodiments, and difference is, a kind of for silicon chip press polished high temperature bond wax, comprise the component of following mass percent: the gum resin of 41.5%, the rosin fat of 28%, the river wax of 26% and the cera flava of 4.5%.
Embodiment 9,
All the other are same as the previously described embodiments, and difference is, a kind of for silicon chip press polished high temperature bond wax, comprise the component of following mass percent: the gum resin of 40%, the rosin fat of 30%, the river wax of 25% and the cera flava of 5%.
High temperature bond wax mass percentage in the technical program except for except the above-mentioned data exemplified out, can also be other other numerical value in this range; The high temperature bond wax prepared by embodiment 2-9 technical scheme, detect after effect with embodiment 1, wherein embodiment 9 be 40% gum resin, the rosin fat of 30%, the river wax of 25% and 5% cera flava be optimal proportion.
Pass through technique scheme, the beneficial effect of technical solution of the present invention is: a kind of for silicon chip press polished high temperature bond wax, comprises the component of following mass percent: the gum resin of 35%-45%, the rosin fat of 25%-35%, the river wax of 20%-30% and the cera flava of 4%-6%; Adopt and provided by the present inventionly reduce production cost for silicon chip press polished high temperature bond wax, can use at different ambient temperatures, can not run sheet at press polish situation lower silicon slice, paraffin removal is convenient and easily clean simultaneously.
In addition, the high temperature bond wax of the technical program production department is adopted, with a kind of wax of model in silicon chip art production process, can use at all seasons, not need environmentally temperature to buy the bonding wax of different model, to reduce production cost, save production sequence, improve production efficiency; And do not run sheet when can stand press polish heating, improve working accuracy, improve quality product, meanwhile, decrease the generation of defective products, reduce production cost, improve economic benefit.
Be more than the description to the embodiment of the present invention, by the above-mentioned explanation to the disclosed embodiments, professional and technical personnel in the field realized or uses the present invention.To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention can not be restricted to these embodiments shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (4)
1. for a silicon chip press polished high temperature bond wax, it is characterized in that, comprise the component of following mass percent: the gum resin of 35%-45%, the rosin fat of 25%-35%, the river wax of 20%-30% and the cera flava of 4%-6%.
2. according to claim 1 for silicon chip press polished high temperature bond wax, it is characterized in that, comprise the component of following mass percent: the gum resin of 38%-42%, the rosin fat of 28%-32%, the river wax of 24%-26% and the cera flava of 4.5%-5.5%.
3. according to claim 2 for silicon chip press polished high temperature bond wax, it is characterized in that, comprise the component of following mass percent: the gum resin of 40%, the rosin fat of 30%, the river wax of 25% and the cera flava of 5%.
4. for the waxed Preparation Method of silicon chip press polished high temperature bond, it is characterized in that, preparation is as claimed in claim 1 for silicon chip press polished high temperature bond wax, specifically comprises the steps:
(1) gum resin and rosin fat are first put in Stainless Steel Kettle in proportion, 800W electric furnace heats, after gum resin and rosin fat all melt, put into river wax and cera flava, wait river wax and cera flava also to melt, fully stir evenly with spoon after lather collapse;
(2) filter with 8 layers of hospital gauze;
(3) pour into again in sizeable fluoroplastics box, can take out after cooling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310517895.1A CN104559801A (en) | 2013-10-28 | 2013-10-28 | High-temperature bonding wax for pressuring polish of silicon wafer and preparation method of high-temperature bonding wax |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310517895.1A CN104559801A (en) | 2013-10-28 | 2013-10-28 | High-temperature bonding wax for pressuring polish of silicon wafer and preparation method of high-temperature bonding wax |
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| CN107254256A (en) * | 2017-06-28 | 2017-10-17 | 中国航发南方工业有限公司 | Sealing with wax and preparation method thereof for frock working face |
| CN113308221A (en) * | 2021-06-09 | 2021-08-27 | 深圳市科玺化工有限公司 | Liquid adhesive wax |
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Application publication date: 20150429 |