CN104538385A - Multi-chip packaging structure and electronic equipment - Google Patents

Multi-chip packaging structure and electronic equipment Download PDF

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Publication number
CN104538385A
CN104538385A CN201510015685.1A CN201510015685A CN104538385A CN 104538385 A CN104538385 A CN 104538385A CN 201510015685 A CN201510015685 A CN 201510015685A CN 104538385 A CN104538385 A CN 104538385A
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China
Prior art keywords
signal
chip
multichip packaging
earth terminal
packaging structure
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CN201510015685.1A
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Chinese (zh)
Inventor
刘学春
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FocalTech Systems Ltd
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Shenzhen Yageng Electronic Technology Co ltd
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Application filed by Shenzhen Yageng Electronic Technology Co ltd filed Critical Shenzhen Yageng Electronic Technology Co ltd
Priority to CN201510015685.1A priority Critical patent/CN104538385A/en
Publication of CN104538385A publication Critical patent/CN104538385A/en
Priority to PCT/CN2015/099532 priority patent/WO2016112780A1/en
Pending legal-status Critical Current

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Classifications

    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60Protection against electrostatic charges or discharges, e.g. Faraday shields
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

Abstract

The invention discloses a multi-chip packaging structure and an electronic device with the same. The multi-chip packaging structure comprises a first chip and a second chip. The first chip includes a ground terminal. The second chip comprises a signal transmission terminal. The signal transmission terminal is connected with the grounding terminal. The signal transmission terminal outputs a first signal to the ground terminal, and the first signal is used as a ground signal of the first chip, wherein the first signal is a variable signal.

Description

Multichip packaging structure and electronic equipment
Technical field
The present invention relates to a kind of multichip packaging structure and electronic equipment.
Background technology
At present, usually can be provided with several functions chip in electronic equipment (as: mobile phone, panel computer etc.), so, the general individual packages of each functional chip, causes taking the larger volume of electronic equipment and causing the cost of electronic equipment higher.
Summary of the invention
For solving the problems of the technologies described above, the invention provides a kind of multichip packaging structure and there is the electronic equipment of multichip packaging structure.
For achieving the above object, the invention provides following technical scheme:
A kind of multichip packaging structure, comprising:
First chip, comprises earth terminal; With
Second chip, comprises Signal transmissions end, and described Signal transmissions end is connected with described earth terminal, described Signal transmissions end exports the first signal to described earth terminal, described first signal is as the earth signal of described first chip, and wherein, described first signal is the signal of change.
Preferably, other voltage of described first chip all changes with the change of described earth signal.
Preferably, other voltage of described first chip all raises with the rising of the voltage of described earth signal, reduces with the reduction of the voltage of described earth signal.
Preferably, described first chip comprises power end further, and described power end receives secondary signal, at synchronization, the voltage of described secondary signal is all greater than the voltage of described first signal, and the voltage difference of described secondary signal and described first signal is the operating voltage of described first chip.
Preferably, described power end is connected with described second chip, and described second chip provides described secondary signal, and described secondary signal is the signal of change.
Preferably, described second chip comprises earth terminal further, the earth terminal of described second chip is held with connecting the equipment of an electronic equipment, or the earth terminal of described second chip is held with the equipment ground of the electronic equipment at described multichip packaging structure place and is connected, or the earth terminal of described second chip is applied with a constant voltage.
Preferably, described multichip packaging structure comprises signal electrode further, and described signal electrode is made up of electric conducting material, and described signal electrode is at least arranged on described first chip circumference.
Preferably, described signal electrode is loaded with the 3rd signal, and described 3rd signal is the signal of change.
Preferably, described 3rd signal is identical with described first signal.
Preferably, described signal electrode is connected with the earth terminal of described first chip and the Signal transmissions end of the second chip.
Preferably, described 3rd signal and described first signal synchronously change, and amplitude size is identical with change direction.
Preferably, the signal that changes with the change of described first signal of described 3rd signal.
Preferably, described 3rd signal raises with the rising of described first signal, reduces with the reduction of described first signal.
Preferably, the changes in amplitude size of described 3rd signal is corresponding identical with the changes in amplitude size of described first signal.
Preferably, described multichip packaging structure comprises fin, and described fin is made up of electric conducting material, and described fin is used for heat radiation, also for as described signal electrode.
Preferably, described first chip and described second chip are all arranged on described fin, wherein, arrange conductive layer between described first chip and described fin, arrange insulating barrier between described second chip and described fin.
Preferably, described fin is connected by described conductive layer with the earth terminal of described first chip
Preferably, described conductive layer is made up of conducting resinl, and described insulating barrier is made up of insulating cement.
Preferably, described multichip packaging structure comprises substrate further, and described first chip and described second chip are arranged over the substrate, and described substrate arranges described signal electrode.
Preferably, described signal electrode is around the first chip.
Preferably, described signal electrode is further around the second chip.
Preferably, described signal electrode is a flood electrode, is arranged between the first chip and described substrate, and with described first chip and the stacked setting of substrate, along stacked vertical direction, the edge of described signal electrode exceeds the edge of described first chip.
Preferably, described first chip is arranged on the same side of described substrate or relative both sides with described second chip.
Preferably, described first chip is sensor chip, and described second chip is control chip.
Preferably, described first chip is fingerprint sensing chip or touch-control sensing chip.
Preferably, described first chip comprises sensor board, described sensor board is used for being coupled to target object in a capacitive manner, described first chip performs sense operation to described sensor board to drive described sensor board by providing pumping signal, to obtain the predetermined information of described target object, wherein, described pumping signal changes with the change of described first signal.
Preferably, described pumping signal raises with the rising of described first signal, reduces with the reduction of described first signal.
The present invention provides again a kind of multichip packaging structure, comprising:
First chip, comprises earth terminal, and described earth terminal is for loading the signal of change; With
Second chip, comprises earth terminal, and described earth terminal is for loading constant signal.
Preferably, described second chip comprises Signal transmissions end, and described Signal transmissions end is connected with the earth terminal of described first chip, for exporting the signal of described change to the earth terminal of described first chip.
The invention provides a kind of electronic equipment, described electronic equipment comprises the multichip packaging structure described in any one described above.
The present invention provides again a kind of electronic equipment, and hold with comprising a multichip packaging structure and equipment, described multichip packaging structure comprises:
First chip, comprises earth terminal, and described earth terminal is for loading the signal of change; With
Second chip, comprises earth terminal, and described earth terminal is held with described equipment ground and is connected.
Preferably, described second chip comprises Signal transmissions end, and described Signal transmissions end is connected with the earth terminal of described first chip, for exporting the signal of described change to the earth terminal of described first chip.
Preferably, described electronic equipment comprises power supply, and described power supply comprises positive pole and negative pole, described negative pole be described equipment hold.
The multichip packaging structure of electronic equipment of the present invention is not only integrated with the first chip and the second chip, and the earth terminal of the first chip loads the voltage of change, thus improves the service behaviour and the availability that comprise the electronic equipment of multichip packaging structure.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of electronic equipment better embodiment of the present invention.
The part isometric structural representation of Fig. 2 to be packaged type be multichip packaging structure of QFN.
Fig. 3 is for multichip packaging structure shown in Fig. 2 is along the cross-sectional view of III-III line.
The part isometric structural representation of Fig. 4 to be packaged type be multichip packaging structure of BGA.
Fig. 5 is for multichip packaging structure shown in Fig. 4 is along the cross-sectional view of V-V line.
Embodiment
It should be noted that, following " signal of change " refers to: along with the extension of time, described signal does not keep same current potential always.Relatively, " constant signal " refers to: along with the extension of time, and the current potential of described signal keeps or substantially remains unchanged.Because signal is always more or less subject to other signal disturbing, thus cause signal to have fluctuation, therefore, it is constant that described constant signal is actually basic maintenance current potential.
Technical term " connection " comprises direct connection, indirectly connect, the various situation such as to couple, and except non-invention specializes as wherein a kind of situation, otherwise comprises various situation.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
The invention provides a kind of multichip packaging structure, is exactly integrated more than two and two chips in an encapsulation, all right other components and parts more integrated, such as electric capacity etc., thus the volume saving electronic equipment, and reduces the manufacturing cost of electronic equipment.
Further, inventor is found by large quantity research, and usually altogether, ground voltage is constant voltage to the multiple chips in multichip packaging structure, is generally 0V.In some encapsulating structures, there is ground level, then can be connected to this ground level chip.So, for some chip, its earthed voltage remains unchanged, and can affect service behaviour or the precision of chip, even can the design of limited chip.For fingerprint sensing chip, parasitic capacitance is formed between the earth terminal of fingerprint sensing chip and capacitance sensing pole plate, if the pumping signal of capacitance sensing pole plate is change, and the ground voltage of earth terminal remains unchanged, then the charge/discharge electricity amount change of parasitic capacitance can affect the sensing precision of fingerprint sensing chip.Therefore, as shown in the above, correspondence provides the ground voltage of respective change to be very necessary to some chip.
Refer to Fig. 1, Fig. 1 is the structural representation of electronic equipment better embodiment of the present invention.Described electronic equipment 100 is as being the equipment such as mobile phone, panel computer, GPS navigation system, TV.Described electronic equipment 100 comprises multichip packaging structure 10 and power supply 30.Described power supply 30 comprises positive pole a and negative pole b, and described positive pole a is for loading the first voltage, and described negative pole b is for loading the second voltage, and wherein, the first voltage is greater than the second voltage.Voltage difference between described first voltage and described second voltage is the supply voltage that described electronic equipment 100 normally works.Described second voltage is constant voltage, is preferably 0V.Described negative pole b is used as the equipment ground end of described electronic equipment 100, and described second voltage is ground voltage.
Described multichip packaging structure 10 comprises the first chip 11 and the second chip 12.First chip 11 and the second chip 12 in the same packaging structure integrated.
Described first chip 11 comprises earth terminal 11a, and described earth terminal 11a is for loading the voltage signal of change.
Described second chip 12 comprises earth terminal 12a, and described earth terminal 12a is for loading constant voltage signal.Preferably, described earth terminal 12a holds with described equipment ground and is connected, the ground voltage held with receiving described equipment, i.e. the second voltage.
Described second chip 12 comprises Signal transmissions end T further.Preferably, described Signal transmissions end T is connected with described earth terminal 11a, and described Signal transmissions end T exports the first signal to described earth terminal 11a, and described first signal is as the earth signal of described first chip 11, and wherein, described first signal is the signal of change.Preferably, described first signal is square-wave signal.More preferably, described first signal is periodically variable square-wave signal.So, the present invention does not limit this, and described first signal also can be other suitable signal, as sine wave signal etc.
Other voltage of described first chip 11 all changes with the change of described first signal.Wherein, other voltage of described first chip 11 all raises with the rising of the voltage of described earth signal, reduces with the reduction of the voltage of described earth signal.
Described first chip 11 comprises power end 11b further, described power end 11b receives secondary signal, at synchronization, the voltage of described secondary signal is greater than the voltage of described first signal, and the voltage difference of described secondary signal and described first signal is the supply voltage that described first chip 11 normally works.
Described power end 11b is connected with described second chip 12, and described second chip 12 provides described secondary signal, and described secondary signal is the signal of change.Described power end 11b also can introduce from package outside.In addition, other communication interface (sign) is also provided with between described first chip 11 and described second chip 12, to carry out information communication.
Preferably, described multichip packaging structure 10 comprises signal electrode further, and described signal electrode is made up of electric conducting material, and described signal electrode is at least arranged on around described first chip 11.Preferably, described signal electrode is used for adding electrical signals, and does not output signal to other element, is not used as input.
Described signal electrode is loaded with the 3rd signal, and described 3rd signal is the signal of change.
In one embodiment, described 3rd signal is identical with described first signal.Preferably, described signal electrode is connected with the earth terminal 11a of described first chip 11 and the Signal transmissions end T of the second chip 12.
In another embodiment, described 3rd signal and described first signal synchronously change, and size variation direction is identical.Preferably, the changes in amplitude size of described 3rd signal is corresponding identical with the changes in amplitude size of described first signal.
In yet, the signal that changes with the change of described first signal of described 3rd signal.Wherein, described 3rd signal raises with the rising of described first signal, reduces with the reduction of described first signal.As, described signal electrode is connected with the second chip 12, and described second chip 12 provides described 3rd signal to described signal electrode.Described 3rd signal is different from described first signal, but relative first signal remains unchanged.Preferably, the changes in amplitude size of described 3rd signal is corresponding identical with the changes in amplitude size of described first signal.
Different according to the packaged type of chip, quad flat non-pin package (Quad Flat No-lead Package is respectively below with regard to packaged type, be called for short QFN) be described with BGA Package (Ball Grid Array Package is called for short BGA).So, the encapsulation of chip is not limited to this two kinds of packaged types, also can be other packaged type.It should be noted that, described multichip packaging structure 10 can not packing material, also can filling epoxy resin material, can also fill other material.
Packaged type QFN
See also Fig. 2 and Fig. 3, the part isometric structural representation of Fig. 2 to be packaged type be multichip packaging structure of QFN.Fig. 3 is for multichip packaging structure shown in Fig. 2 is along the cross-sectional view of III-III line.Described multichip packaging structure 10 comprises fin 13, pin 14, lead-in wire 15 further.Described first chip 11 is connected respectively by lead-in wire 15 is corresponding with pin 14 with the second chip 12.It is peripheral that described pin 14 is arranged on described fin 13.Described fin 13 is made up of electric conducting material, for heat radiation, also for as described signal electrode.Thus, save material, save volume.
Described first chip 11 is all arranged on described fin 13 with described second chip 12, wherein, arranges conductive layer 16 between described first chip 11 and described fin 13, arranges insulating barrier 17 between described second chip 12 and described fin 13.In one embodiment, described fin 13 is connected by described conductive layer 16 with the earth terminal 11a of described first chip 11.Wherein, the substrate of described first chip 11 is preferably silicon substrate, and described earth terminal 11a is electrically connected with described fin 13 by silicon substrate.Preferably, described conductive layer 16 is made up of conducting resinl, and described insulating barrier 17 is made up of insulating cement.
Conduct characteristic in order to what improve the earth terminal 11a of the first chip 11 and described fin 13, in another embodiment, described earth terminal 11a can further by a wire 18 and described fin 13.
Packaged type BGA
See also Fig. 4 and Fig. 5, the part isometric structural representation of Fig. 4 to be packaged type be multichip packaging structure of BGA.Fig. 5 is for multichip packaging structure shown in Fig. 4 is along the cross-sectional view of V-V line.Described multichip packaging structure 10 comprises substrate 19, pin 14, lead-in wire 15 further, and described pin 14, described first chip 11 and described second chip 12 are arranged on described substrate 19, and described substrate 19 arranges above-mentioned signal electrode.Described first chip 11 is arranged through lead-in wire 15 with described second chip 12 and is connected with pin 14.Preferably, described substrate 19 is dielectric substrate.Preferably, described first chip 11 and the second chip 12 are arranged on described substrate 19 respectively by insulating cement 17.
Wherein, for cheer and bright, in Fig. 4 and Fig. 5, adopt label " 20 " beacon signal electrode.Preferably, described signal electrode 20 is around the first chip 11.
In another embodiment, described signal electrode 20 is further around the second chip 12.
In yet, described signal electrode 20 is a flood electrode, is arranged between the first chip 11 and described substrate 19, with described second chip 11 and the stacked setting of substrate 19.Along stacked vertical direction, the edge of described signal electrode 20 exceeds the edge of described first chip 11.
In the present embodiment, described signal electrode 20 is connected respectively with described Signal transmissions end T and earth terminal 11a, receives the first signal.
Further, described first chip 11 is arranged on the same side of described substrate 19 or relative both sides with described second chip 12.When described first chip 11 is arranged on the relative both sides of described substrate 19 with described second chip 12, described first chip 11 is preferably stacking setting with described second chip 12, and by described substrate 19 interval.Wherein, described substrate 19 is dielectric substrate.
In the respective embodiments described above, preferably, described first chip 11 is sensor chip, and described second chip 12 is control chip.So, the present invention's contrast does not limit, described first chip 11 and the second chip 12 also can be other functional chip, and for one of ordinary skill in the art, the technology of the present invention content easilier can be reasonably applicable to other functional chip according to instruction of the present invention by it.
Further, described sensor chip is as being fingerprint sensing chip or touch-control sensing chip.Particularly, described fingerprint sensing chip or touch-control sensing chip preferably adopt capacitance type sensing technology, more preferably, adopt self-capacitance detection technology.
For fingerprint sensing chip, described fingerprint sensing chip comprises sensor board, described sensor board comprises multiple capacitance sensing pole plate, described sensor board is used for being coupled to target object in a capacitive manner, described fingerprint sensing chip performs sense operation, to obtain the predetermined information of described target object to described sensor board to drive described sensor board by providing pumping signal.Described fingerprint sensing chip obtains the predetermined information of target object by the capacitance variations measured between sensor board and described target object.Wherein, described target object is as being finger.Described predetermined information is as being finger print information.
Wherein, described pumping signal changes with the change of first signal of described earth terminal 11a, to reduce the charge/discharge electricity amount between described earth terminal 11a and described sensor board.Preferably, described pumping signal raises with the rising of described first signal, reduces with the reduction of described first signal.Thus the parasitic capacitance between the earth terminal 11a of reduction fingerprint sensing chip and capacitance sensing pole plate is on the impact sensing precision.
Further, described signal electrode then for producing electric field with target object, thus makes the electric field line of the capacitance sensing pole plate at edge also and between target object comparatively even, thus obtains more real predetermined information.
Only be described for the first chip 11 and the second chip 12 in the above-mentioned multichip packaging structure 10 of the present invention.So, a number of the present invention's not limited chip, also can comprise other chip such as the 3rd chip, the 4th chip in described multichip packaging structure 10.In addition, described signal electrode also can be connected to other chip, receives the 3rd signal from other chip.
As shown in the above, the multichip packaging structure 10 of electronic equipment 100 of the present invention is not only integrated with multiple chips, and select earth terminal 11a to load the voltage of change according to chip own structural characteristics, thus improve service behaviour and the availability of multichip packaging structure 10.
To the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field are realized or uses the present invention.To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention can not be restricted to these embodiments shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.

Claims (32)

1. a multichip packaging structure, comprising:
First chip, comprises earth terminal; With
Second chip, comprises Signal transmissions end, and described Signal transmissions end is connected with described earth terminal, described Signal transmissions end exports the first signal to described earth terminal, described first signal is as the earth signal of described first chip, and wherein, described first signal is the signal of change.
2. multichip packaging structure according to claim 1, is characterized in that, other voltage of described first chip all changes with the change of described earth signal.
3. multichip packaging structure according to claim 2, is characterized in that, other voltage of described first chip all raises with the rising of the voltage of described earth signal, reduces with the reduction of the voltage of described earth signal.
4. multichip packaging structure according to claim 1, it is characterized in that, described first chip comprises power end further, described power end receives secondary signal, at synchronization, the voltage of described secondary signal is all greater than the voltage of described first signal, and the voltage difference of described secondary signal and described first signal is the operating voltage of described first chip.
5. multichip packaging structure according to claim 4, is characterized in that, described power end is connected with described second chip, and described second chip provides described secondary signal, and described secondary signal is the signal of change.
6. multichip packaging structure according to claim 1, it is characterized in that, described second chip comprises earth terminal further, the earth terminal of described second chip is held with connecting the equipment of an electronic equipment, or the earth terminal of described second chip is held with the equipment ground of the electronic equipment at described multichip packaging structure place and is connected, or the earth terminal of described second chip is applied with a constant voltage.
7. multichip packaging structure according to claim 1, is characterized in that, described multichip packaging structure comprises signal electrode further, and described signal electrode is made up of electric conducting material, and described signal electrode is at least arranged on described first chip circumference.
8. multichip packaging structure according to claim 7, is characterized in that, described signal electrode is loaded with the 3rd signal, and described 3rd signal is the signal of change.
9. multichip packaging structure according to claim 8, is characterized in that, described 3rd signal is identical with described first signal.
10. multichip packaging structure according to claim 9, is characterized in that, described signal electrode is connected with the earth terminal of described first chip and the Signal transmissions end of the second chip.
11. multichip packaging structures according to claim 8, is characterized in that, described 3rd signal and described first signal synchronously change, and amplitude size is identical with change direction.
12. multichip packaging structures according to claim 8, is characterized in that, the signal that described 3rd signal changes with the change of described first signal.
13. multichip packaging structures according to claim 12, is characterized in that, described 3rd signal raises with the rising of described first signal, reduces with the reduction of described first signal.
14. multichip packaging structures according to claim 11 or 13, it is characterized in that, the changes in amplitude size of described 3rd signal is corresponding identical with the changes in amplitude size of described first signal.
15. multichip packaging structures according to claim 8, it is characterized in that, described multichip packaging structure comprises fin, described fin is made up of electric conducting material, and described fin is used for heat radiation, also for as described signal electrode.
16. multichip packaging structures according to claim 15, it is characterized in that, described first chip and described second chip are all arranged on described fin, wherein, between described first chip and described fin, conductive layer is set, between described second chip and described fin, insulating barrier is set.
17. multichip packaging structures according to claim 16, is characterized in that, described fin is connected institute with the earth terminal of described first chip by described conductive layer.
18. multichip packaging structures according to claim 8, is characterized in that, described multichip packaging structure comprises substrate further, and described first chip and described second chip are arranged over the substrate, and described substrate arranges described signal electrode.
19. multichip packaging structures according to claim 18, is characterized in that, described signal electrode is around the first chip.
20. multichip packaging structures according to claim 19, is characterized in that, described signal electrode is further around the second chip.
21. multichip packaging structures according to claim 18, it is characterized in that, described signal electrode is a flood electrode, be arranged between the first chip and described substrate, with described first chip and the stacked setting of substrate, along stacked vertical direction, the edge of described signal electrode exceeds the edge of described first chip.
22. multichip packaging structures according to claim 18, is characterized in that, described first chip is arranged on the same side of described substrate or relative both sides with described second chip.
23. multichip packaging structures according to claim 1, is characterized in that, described first chip is sensor chip, and described second chip is control chip.
24. multichip packaging structures according to claim 23, is characterized in that, described first chip is fingerprint sensing chip or touch-control sensing chip.
25. multichip packaging structures according to claim 1, it is characterized in that, described first chip comprises sensor board, described sensor board is used for being coupled to target object in a capacitive manner, described first chip performs sense operation to described sensor board to drive described sensor board by providing pumping signal, to obtain the predetermined information of described target object, wherein, described pumping signal changes with the change of described first signal.
26. multichip packaging structures according to claim 25, is characterized in that, described pumping signal raises with the rising of described first signal, reduce with the reduction of described first signal.
27. 1 kinds of multichip packaging structures, comprising:
First chip, comprises earth terminal, and described earth terminal is for loading the signal of change; With
Second chip, comprises earth terminal, and described earth terminal is for loading constant signal.
28. multichip packaging structures according to claim 27, it is characterized in that, described second chip comprises Signal transmissions end, and described Signal transmissions end is connected with the earth terminal of described first chip, for exporting the signal of described change to the earth terminal of described first chip.
29. 1 kinds of electronic equipments, described electronic equipment comprises as the multichip packaging structure in claim 1-28 as described in any one.
30. 1 kinds of electronic equipments, hold with comprising a multichip packaging structure and equipment, described multichip packaging structure comprises:
First chip, comprises earth terminal, and described earth terminal is for loading the signal of change; With
Second chip, comprises earth terminal, and described earth terminal is held with described equipment ground and is connected.
31. electronic equipments according to claim 30, is characterized in that, described second chip comprises Signal transmissions end, and described Signal transmissions end is connected with the earth terminal of described first chip, for exporting the signal of described change to the earth terminal of described first chip.
32. electronic equipments according to claim 30, it is characterized in that, described electronic equipment comprises power supply, described power supply comprises positive pole and negative pole, described negative pole be described equipment hold.
CN201510015685.1A 2015-01-13 2015-01-13 Multi-chip packaging structure and electronic equipment Pending CN104538385A (en)

Priority Applications (2)

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