CN104516158A - Design method and display device of spacer - Google Patents
Design method and display device of spacer Download PDFInfo
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- CN104516158A CN104516158A CN201510038977.7A CN201510038977A CN104516158A CN 104516158 A CN104516158 A CN 104516158A CN 201510038977 A CN201510038977 A CN 201510038977A CN 104516158 A CN104516158 A CN 104516158A
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- Prior art keywords
- chock insulator
- insulator matter
- display device
- pixel
- main
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
- G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
- G02F1/13396—Spacers having different sizes
Abstract
The invention provides a design method and a display device of a spacer, and relates to the technical field of display. The anti-pressure ability of the display device is improved. The design method of the spacer comprises the following steps: obtaining the unit support area ratio Z which the spacer is required to reach in the display device according to the requirement for the anti-pressure ability of the display device, wherein Z is the ratio of the support area of the spacer required for supporting unit pixel to the area of the unit pixel, Z is equal to (S1.rho)/S2, S1 is the top area of the unit spacer, rho is the distribution density of the spacer in the unit pixel, and S2 is the area of the unit pixel; obtaining the rho according to S1, S2 and the formula that Z=(S1.rho)/S2, and arranging the spacer in the display device according to the obtained rho.
Description
Technical field
The present invention relates to display technique field, particularly relate to a kind of method for designing and display device of chock insulator matter.
Background technology
Liquid crystal display is the display of current main flow, it forms primarily of polaroid, backlight, color membrane substrates, array base palte and the liquid crystal between color membrane substrates and array base palte, the gap being full of liquid crystal between color membrane substrates and array base palte is called that box is thick, and the homogeneity that box is thick weighs an important technology index of liquid crystal display quality.For the homogeneity that keeping box is thick, current most popular method arranges cylindrical spacer (Post Spacer) at color membrane substrates and array base palte to carry out supporting substrate.
Usually, chock insulator matter is formed with on color membrane substrates by exposure, and chock insulator matter comprises main chock insulator matter and secondary chock insulator matter two kinds.When color membrane substrates and array base palte are to box, main chock insulator matter top withstands on array base palte, first plays a supporting role, produce certain deformation, the homogeneity maintaining box thick is played a major role, generally, now secondary chock insulator matter top does not touch array base palte, deformation does not occur.Only have when outer bound pair liquid crystal display applies certain pressure or under low temperature condition, secondary chock insulator matter just can push up on array base palte, really plays supporting function.
For ensureing that liquid crystal display also has good display quality when bearing pressure, require that liquid crystal display will possess certain anti-pressure ability, the anti-pressure ability of liquid crystal display depends on the anchorage force that its chock insulator matter can provide, when the anchorage force that chock insulator matter provides is not enough to the pressure contending with extraneous, skew or deformation will be there is in chock insulator matter, even impaired, cause showing bad generation.Find in reality is to the test of liquid crystal display anti-pressure ability, the anti-pressure ability of existing liquid crystal display is poor.
Summary of the invention
For overcoming above-mentioned defect of the prior art, technical matters to be solved by this invention is: the method for designing and the display device that provide a kind of chock insulator matter, to improve the anti-pressure ability of display device.
For achieving the above object, the present invention adopts following technical scheme:
A first aspect of the present invention provides a kind of method for designing of chock insulator matter, comprise: compare Z according to obtaining the unit Area of bearing that chock insulator matter needs in display device reach to the requirement of display device anti-pressure ability, the Area of bearing of chock insulator matter of Z required for support organization's pixel and the area ratio of unit picture element, Z=(S1 ρ)/S2, wherein S1 is the topside area of unit chock insulator matter, ρ is the distribution density of chock insulator matter in unit pixel, and S2 is the area of unit pixel; Obtain ρ according to S1, S2 and Z=(S1 ρ)/S2, according to obtained ρ, chock insulator matter is set in a display device.
Optionally, the requirement of described basis to display device anti-pressure ability obtains chock insulator matter in display device needs the unit Area of bearing reached specifically to comprise than Z: according to the requirement of display device anti-pressure ability being obtained respectively to unit Area of bearing that unit Area of bearing that in display device, main chock insulator matter needs reach reaches than Z ' and secondary chock insulator matter needs than Z 〞; Describedly obtain ρ according to S1, S2 and Z=(S1 ρ)/S2, arrange chock insulator matter in a display device according to obtained ρ specifically to comprise: obtain according to Z=(S1 ρ)/S2, Z '=(S1 ' ρ ')/S2, wherein S1 ' is the topside area of the main chock insulator matter of unit, ρ ' is the distribution density of chock insulator matter main in unit pixel, Z 〞=(S1 〞 ρ 〞)/S2, wherein S1 〞 is the topside area of the secondary chock insulator matter of unit, and ρ 〞 is the distribution density of secondary chock insulator matter in unit pixel; Obtain ρ ' according to S1 ', S2 and Z '=(S1 ' ρ ')/S2, and obtain ρ 〞 according to S1 〞, S2 and Z 〞=(S1 〞 ρ 〞)/S2; Main chock insulator matter is set in a display device according to obtained ρ ', and secondary chock insulator matter is set in a display device according to obtained ρ 〞.
Optionally, described main chock insulator matter is set in a display device according to obtained ρ ', and arrange secondary chock insulator matter in a display device according to obtained ρ 〞 specifically to comprise: the pixel of display device is divided into multiple pixel period, each described pixel period comprises multiple pixel; Obtain the magnitude setting of main chock insulator matter in each described pixel period according to ρ ', and obtain the magnitude setting of secondary chock insulator matter in each described pixel period according to ρ 〞.
Optionally, a main chock insulator matter and multiple secondary chock insulator matter is provided with in each described pixel period, the corresponding pixel of each chock insulator matter, the quantity sum of described main chock insulator matter and described secondary chock insulator matter is less than or equal to the quantity of the pixel included by each described pixel period.
Optionally, in the pixel around the pixel corresponding to described main chock insulator matter, described secondary chock insulator matter is not set at least one pixel.
Optionally, chock insulator matter described at least one comprises chock insulator matter main body and is positioned at the metal level of described chock insulator matter body top.
Optionally, the section difference at described main chock insulator matter and described secondary chock insulator matter position place is within 0.15 μm ~ 0.55 μm.
Optionally, the thin film transistor (TFT) of described main chock insulator matter and the corresponding display device of described secondary chock insulator matter difference, the top of described main chock insulator matter withstands on the thin film transistor (TFT) corresponding to it, has gap between the top of described secondary chock insulator matter and the thin film transistor (TFT) corresponding to it.
Optionally, described secondary chock insulator matter comprises secondary chock insulator matter main body and is positioned at the metal level of described secondary chock insulator matter body top.
Optionally, the thin film transistor (TFT) of the corresponding display device of described main chock insulator matter, the grid line of the corresponding display device of described secondary chock insulator matter, the top of described main chock insulator matter withstands on the thin film transistor (TFT) corresponding to it, has gap between the top of described secondary chock insulator matter and the grid line corresponding to it.
A second aspect of the present invention provides a kind of display device, and the chock insulator matter in described display device adopts the method for designing of above-described chock insulator matter to design.
Optionally, described chock insulator matter comprises main chock insulator matter and secondary chock insulator matter.
Optionally, described display device comprises multiple pixel period, and each described pixel period comprises multiple pixel; Be provided with a main chock insulator matter and multiple secondary chock insulator matter in each described pixel period, the corresponding pixel of each chock insulator matter, the quantity sum of described main chock insulator matter and described secondary chock insulator matter is less than or equal to the quantity of the pixel included by each described pixel period.
Optionally, in the pixel around described main chock insulator matter, described secondary chock insulator matter is not set at least one pixel.
Optionally, chock insulator matter described at least one comprises chock insulator matter main body and is positioned at the metal level of described chock insulator matter body top.
Optionally, the section difference at described main chock insulator matter and described secondary chock insulator matter position place is within 0.15 μm ~ 0.55 μm.
Optionally, the thin film transistor (TFT) of described main chock insulator matter and the corresponding display device of described secondary chock insulator matter difference, the top of described main chock insulator matter withstands on the thin film transistor (TFT) corresponding to it, has gap between the top of described secondary chock insulator matter and the thin film transistor (TFT) corresponding to it.
Optionally, described secondary chock insulator matter comprises secondary chock insulator matter main body and is positioned at the metal level of described secondary chock insulator matter body top.
Optionally, the thin film transistor (TFT) of the corresponding display device of described main chock insulator matter, the grid line of the corresponding display device of described secondary chock insulator matter, the top of described main chock insulator matter withstands on the thin film transistor (TFT) corresponding to it, has gap between the top of described secondary chock insulator matter and the grid line corresponding to it.
In the method for designing of chock insulator matter provided by the present invention and display device, first the unit Area of bearing reached is needed to compare Z according to obtaining chock insulator matter in display device to the requirement of display device anti-pressure ability, then according to Z=(S1 ρ)/S2, under the prerequisite that the apex area S1 of unit chock insulator matter and the area S2 of unit picture element is certain, the distribution density ρ of chock insulator matter in unit picture element can be obtained, and then the chock insulator matter of right quantity can be set in a display device according to obtained density p, avoid the very few of chock insulator matter setting, the anchorage force provided is not enough to contend with the problem of extraneous pressure, improve the anti-pressure ability of display device.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
The design drawing of the main chock insulator matter that Fig. 1 provides for the embodiment of the present invention two and secondary chock insulator matter;
The design drawing of the first formation section difference that Fig. 2 provides for the embodiment of the present invention four;
The optimal design figure of the first formation section difference that Fig. 3 provides for the embodiment of the present invention four;
The design drawing of the second formation section difference that Fig. 4 provides for the embodiment of the present invention four;
The main chock insulator matter of description of reference numerals: 11-; The secondary chock insulator matter of 12-; T-pixel period; P-unit picture element; The black matrix of BM-; AA-viewing area; 1-color membrane substrates; 2-array base palte; 21-grid; 22-gate insulator; 23-active layer; 24-source electrode; 25-drains; 26-passivation layer; 3-liquid crystal; Δ h-section is poor; TFT-thin film transistor (TFT); The secondary chock insulator matter main body of 121-; 122-metal level; Gate-grid line.
Embodiment
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, below in conjunction with the accompanying drawing in the embodiment of the present invention, are clearly and completely described the technical scheme in the embodiment of the present invention.Obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, other embodiments all that those of ordinary skill in the art obtain under the prerequisite of not making creative work, all belong to the scope of protection of the invention.
Embodiment one
Present embodiments provide a kind of method for designing of chock insulator matter, comprising:
Step S1: need the unit Area of bearing reached to compare Z according to obtaining chock insulator matter in display device to the requirement of display device anti-pressure ability, the Area of bearing of chock insulator matter of Z required for support organization's pixel and the area ratio of unit picture element, Z=(S1 ρ)/S2, wherein S1 is the topside area of unit chock insulator matter, ρ is the distribution density of chock insulator matter in unit pixel, and S2 is the area of unit pixel;
Step S2: obtain ρ according to S1, S2 and Z=(S1 ρ)/S2, according to obtained ρ, chock insulator matter is set in a display device.
The anti-pressure ability of display device is directly proportional than Z to unit Area of bearing, the Area of bearing of chock insulator matter of Z required for support organization's pixel and the area ratio of unit picture element, that is under the prerequisite that the area of unit picture element is certain, the Area of bearing of the chock insulator matter that support organization's pixel is used is larger, and the anti-pressure ability of display device is higher.
As shown in table 1 below, inventor finds through experiment, unit Area of bearing is directly proportional to the topside area S1 of unit chock insulator matter than Z, be directly proportional to the distribution density ρ of chock insulator matter in unit picture element, be inversely proportional to the area S2 of unit picture element, i.e. Z=(S1 ρ)/S2, wherein S1 ρ can be understood as total topside area (Area of bearing of the chock insulator matter required for support organization's pixel) of chock insulator matter in unit picture element.
It should be noted that, in following table 1, the top dimension of the main chock insulator matter of unit is the value of its diameter when main chock insulator matter is circle, then the topside area of the main chock insulator matter of unit is π r
2=π × (14/2)
2; In addition the experimental data in following table 1 is with the WXGA of 7inch (inch) (Wide Extended Graphics Array, Wide Extended Graphics Array, specification is 1280 × 800 pixels or 1280 × 768 pixels) the experimental data that obtains for object of display panel, for chock insulator matter be its main chock insulator matter, those skilled in the art should learn that the above-mentioned conclusion drawn from following table 1 is the display panel being applicable to have other size, specification, and are applicable to the chock insulator matter (as: secondary chock insulator matter) of other kind.
Table 1
Found by formula Z=(S1 ρ)/S2, for the display device of certain resolution (i.e. certain unit picture element area S2), promote its anti-pressure ability, then need to improve unit area and support ratio, and then need to increase the distribution density ρ of chock insulator matter in the topside area S1 of unit chock insulator matter and unit picture element.If fix the design of the topside area S1 of unit chock insulator matter, then ρ=(ZS2)/S1, can obtain requiring that the unit Area of bearing that in display device, chock insulator matter needs reach compares Z for meeting this to the requirement of display device anti-pressure ability according to reality, known S1 and S2, ρ can be tried to achieve, thus the anti-pressure ability of display device can be improved according to the chock insulator matter that obtained ρ carries out designing, make display device possess required anti-pressure ability.
Embodiment two
Based on embodiment one, the technical scheme that the present embodiment provides can realize the design to the display device with main chock insulator matter and secondary chock insulator matter.
Concrete, step S1 is: the unit Area of bearing according to obtaining main chock insulator matter in display device to the requirement of display device anti-pressure ability respectively and needing to reach needs the unit Area of bearing reached than Z 〞 than Z ' with secondary chock insulator matter;
Step S2 comprises:
Step S21: obtain according to Z=(S1 ρ)/S2, Z '=(S1 ' ρ ')/S2, wherein S1 ' is the topside area of the main chock insulator matter of unit, ρ ' is the distribution density of chock insulator matter main in unit pixel, Z 〞=(S1 〞 ρ 〞)/S2, wherein S1 〞 is the topside area of the secondary chock insulator matter of unit, and ρ 〞 is the distribution density of secondary chock insulator matter in unit pixel;
Step S22: obtain ρ ' according to S1 ', S2 and Z '=(S1 ' ρ ')/S2, and obtain ρ 〞 according to S1 〞, S2 and Z 〞=(S1 〞 ρ 〞)/S2;
Step S23: main chock insulator matter is set in a display device according to obtained ρ ', and secondary chock insulator matter is set in a display device according to obtained ρ 〞.
The distribution density ρ ' of main chock insulator matter in display device unit picture element and the distribution density ρ 〞 of secondary chock insulator matter in unit picture element can be obtained by above-mentioned concrete steps, thus carry out according to obtained ρ ' and ρ 〞 the main chock insulator matter that designs and secondary chock insulator matter can coordinate the anti-pressure ability improving display device, make display device possess required anti-pressure ability.
As shown in Figure 1, above-mentioned steps S23 can specifically comprise:
Step S231: the pixel of display device is divided into multiple pixel period T, each pixel period T comprises multiple pixel P;
Step S232: the magnitude setting obtaining main chock insulator matter 11 in each pixel period T according to ρ ', and the magnitude setting obtaining secondary chock insulator matter 12 in each pixel period T according to ρ 〞.
Because main chock insulator matter 11 and pixel P corresponding relation are quantitatively one-to-many under normal circumstances, in the unit picture element P obtained, the distribution density ρ ' of main chock insulator matter 11 is less than 1, therefore by the pixel of display device is divided into multiple pixel period T, ρ ' is multiplied with the quantity of pixel P included in a pixel period T, obtain the magnitude setting of main chock insulator matter 11 in a pixel period T, can make this magnitude setting be greater than 1 number, the convenient design to main chock insulator matter 11.Based on the aforementioned ρ of utilization ', main chock insulator matter 11 is carried out to the method for quantitative design, the distribution density ρ 〞 of chock insulator matter 12 secondary in obtained unit picture element P is multiplied with the quantity of pixel P included in a pixel period T, obtains the magnitude setting of secondary chock insulator matter 12 in same pixel period T.
Further, a main chock insulator matter 11 and multiple secondary chock insulator matter 12 can be set in each pixel period T, the corresponding pixel P of each chock insulator matter, the quantity sum of main chock insulator matter 11 and secondary chock insulator matter 12 is less than or equal to the quantity of the pixel included by each pixel period T, thus utilize the whole pixels of main chock insulator matter to whole pixel period to carry out main support, utilize secondary chock insulator matter to be approximately man-to-man supplemental support to each pixel in pixel period respectively, further increase the anti-pressure ability of display device.
Further, can make in the pixel around the pixel corresponding to main chock insulator matter, in at least one pixel, secondary chock insulator matter is not set, be available by least one in the pixel around main chock insulator matter, thus main chock insulator matter is distinguished, make follow-up to the operation such as the detection in display device, test in can easier recognize main chock insulator matter.
With concrete example, the technical scheme provided in the present embodiment is introduced below.
As shown in table 2 below, inventor obtains through experiment, and good for ensureing display panel display after the anti-pressure ability test of 70Kgf, main chock insulator matter needs the unit Area of bearing reached at least should be about 210 μm than Z '
2/ mm
2, secondary chock insulator matter needs the unit Area of bearing reached at least should be about 16000 μm than Z 〞
2/ mm
2.
It should be noted that, in following table 2, the top dimension of unit master (pair) chock insulator matter is the value of its diameter when to lead (pair) chock insulator matter be circle, then the topside area of unit master (pair) chock insulator matter is π r
2, wherein r is the radius of main (pair) chock insulator matter; And, 7WSVGA (Wide Screen Video GraphicsArray in following table 2, widescreen video graphic array) represent that the specification of 7inch is the display panel of 1024 × 600 pixels, 7WXGA represents that the specification of 7inch is the display panel of 1280 × 800 pixels or 1280 × 768 pixels, and 8WXGA represents that the specification of 8inch is the display panel of 1280 × 800 pixels or 1280 × 768 pixels; In addition, total unit Area of bearing is than main chock insulator matter required for support organization's pixel and total Area of bearing of secondary chock insulator matter and the area ratio of unit picture element.
Table 2
For undersized display panels, the size at its main chock insulator matter top can be 7 μm ~ 11 μm, and the size at secondary chock insulator matter top can be 8 μm ~ 15 μm.
With the WXGA of 8inch (inch) (Wide Extended Graphics Array, Wide Extended Graphics Array) display panel be example, the area S2 of its unit picture element is 44.85 μm × 134.55 μm, and the topside area S1 ' of the main chock insulator matter of unit can be π × (12/2)
2μm
2, the topside area S1 〞 of the secondary chock insulator matter of unit can be π × (11.5/2)
2μm
2, according to Z '=(S1 ' ρ ')/S2 and Z 〞=(S1 〞 ρ 〞)/S2, then the distribution density ρ ' that can obtain main chock insulator matter in unit picture element is about 0.0138, and in unit picture element, the distribution density ρ 〞 of secondary chock insulator matter is about 0.972.Thus the pixel of display panel can be divided into multiple pixel period, each pixel period comprises 72 pixels, 1 main chock insulator matter and 70 secondary chock insulator matters are at least set in each pixel period, around main chock insulator matter, vacate 1 pixel, in all the other 71 pixels, be provided with 1 chock insulator matter.Through checking, area ratio is 260.30 μm to utilize the unit of the main chock insulator matter of aforementioned set-up mode to support
2/ mm
2, be greater than required standard 210 μm
2/ mm
2, the unit Area of bearing ratio of secondary chock insulator matter is 16734.20 μm
2/ mm
2, be greater than required standard 16000 μm
2/ mm
2, thus the anti-pressure ability of the display panel obtained is at more than 70Kgf.
For the display panel of the WXGA of 7inch, the size S2 of unit picture element is 39.25 μm × 117.75 μm, and the topside area S1 ' of unit major-minor chock insulator matter can be π × (11/2)
2μm
2, the topside area S1 〞 of the secondary chock insulator matter of unit can be π × (10/2)
2μm
2, according to Z '=(S1 ' ρ ')/S2 and Z 〞=(S1 〞 ρ 〞)/S2, then the distribution density ρ ' that can obtain main chock insulator matter in unit picture element is about 0.011, and in unit picture element, the distribution density ρ 〞 of secondary chock insulator matter is about 0.977.Thus the pixel of display panel can be divided into multiple pixel period, each pixel period comprises 90 pixels, 1 main chock insulator matter and 88 secondary chock insulator matters are at least set in each pixel period, around main chock insulator matter, vacate 1 pixel, in all the other 88 pixels, be provided with 1 chock insulator matter.Through checking, area ratio is 228.47 μm to utilize the unit of the main chock insulator matter of aforementioned set-up mode to support
2/ mm
2, be greater than required standard 210 μm
2/ mm
2, the unit Area of bearing ratio of secondary chock insulator matter is 16616.11 μm
2/ mm
2, be greater than required standard 16000 μm
2/ mm
2, thus the anti-pressure ability of the display panel obtained is at more than 70Kgf.
It should be noted that, the present embodiment is only specifically introduced provided method for designing with above two examples, for the display panel of other size and type, on the basis of the method for designing of the chock insulator matter that those skilled in the art can provide at the present embodiment, obtain corresponding design proposal through distortion, extension or retouching, describe in detail no longer one by one at this.
In addition, can obtain from Z=(S1 ρ)/S2, also can be improved the unit Area of bearing ratio of chock insulator matter by the topside area S1 improving unit chock insulator matter, and then improve the anti-pressure ability of display device.Concrete, precision and stability, color membrane substrates and the array base palte that can make according to the size of matrix black on actual color membrane substrates, chock insulator matter technique design the skew skew of about 3 μm (may have up and down ±) during box, the topside area S1 of the factors such as impact to unit chock insulator matter of friction process on chock insulator matter.
Further, the present embodiment does not carry out concrete restriction to the top shape of chock insulator matter, can be designed to circle, rectangle, hexagon or other polygon etc., to match with other structure (as: black matrix) in display device.
Embodiment three
Based on embodiment one, in the method for designing of the chock insulator matter that the present embodiment provides, at least one chock insulator matter is designed to the structure of the metal level comprising chock insulator matter main body and be positioned at chock insulator matter body top, the hardness of metal level is stronger, thus the support strength of chock insulator matter can be increased, and then improve the anti-pressure ability of display device.
In the present embodiment, whole chock insulator matters all can be set to the structure comprising chock insulator matter main body and metal level, to improve the support strength of chock insulator matter to greatest extent.Chock insulator matter is comprised to the display device of main chock insulator matter and secondary chock insulator matter, the main dottle pin owner main body that can first utilize intermediate tone mask technique height of formation different and secondary chock insulator matter main body, and then utilize patterning processes at the disposable formation metal level in top of the top of main dottle pin owner main body and secondary chock insulator matter main body.
Or whole secondary chock insulator matters can be designed to the structure comprising secondary chock insulator matter main body and metal level, main chock insulator matter is structure as a whole, to increase the support strength of secondary chock insulator matter.Chock insulator matter is comprised to the display device of main chock insulator matter and secondary chock insulator matter, the main chock insulator matter that can first utilize intermediate tone mask technique height of formation different and secondary chock insulator matter main body, and then utilize patterning processes to form metal level at the top of secondary dottle pin owner main body.
Or whole main chock insulator matters can be designed to the structure comprising main chock insulator matter main body and metal level, secondary chock insulator matter is structure as a whole, to increase the support strength of main chock insulator matter.Chock insulator matter is comprised to the display device of main chock insulator matter and secondary chock insulator matter, the main chock insulator matter main body that can first utilize intermediate tone mask technique height of formation different and secondary chock insulator matter, and then utilize patterning processes to form metal level at the top of main dottle pin owner main body.
In the present embodiment, chock insulator matter main body can adopt the lower resin of the hardness such as low hardness polyurethane resin or soft acrylic resin to make; Metal level can adopt the higher material of hardness to make, as: the materials such as Mo (molybdenum), Al (aluminium), ITO (tin indium oxide), the thickness of metal level preferably can be between 0.2 μm ~ 0.5 μm.
Embodiment four
Based on embodiment two, the section difference of the present embodiment to main chock insulator matter and secondary chock insulator matter position place carries out appropriate design, to reach the anti-pressure ability both improving liquid crystal indicator, ensures that again liquid crystal indicator has the object of higher liquid crystal undulate quantity.
Inventor studies discovery, in liquid crystal indicator, the section difference Δ h at main chock insulator matter and secondary chock insulator matter place is less, and its anchorage force that can provide is larger, thus the anti-pressure ability of liquid crystal indicator is stronger, but Δ h is less, the liquid crystal undulate quantity of liquid crystal indicator can be caused to decline; And the section difference Δ h at main chock insulator matter and secondary chock insulator matter place is too large, although liquid crystal undulate quantity can improve, but can cause is that main chock insulator matter is played a supporting role always, in fact secondary chock insulator matter is difficult to play supporting role, the anti-pressure ability of liquid crystal indicator reduces greatly, even cause main chock insulator matter crushed, cause display bad.Visible, the anti-pressure ability of liquid crystal indicator and liquid crystal undulate quantity are the relation mutually restricted.
As shown in table 3 below, inventor obtains through experiment, when the section difference Δ h at main chock insulator matter and secondary chock insulator matter position place is within 0.15 μm ~ 0.55 μm, above-mentioned anti-pressure ability and liquid crystal undulate quantity can reach certain equilibrium relation, good anti-pressure ability can be reached, can meet again good liquid crystal undulate quantity, and effect is best when section difference Δ h is 0.55 μm.It should be noted that, require liquid crystal undulate quantity in usual display panels more than 3% for qualified.
Table 3
Liquid crystal indicator generally includes: the color membrane substrates be oppositely arranged and array base palte, and is positioned at liquid crystal therebetween, generally chock insulator matter can be arranged on color membrane substrates.In the present embodiment, the section of being formed difference Δ h mode can have multiple.
Such as: as shown in Figure 2, the TFT of main chock insulator matter 11 and the corresponding display device of secondary chock insulator matter 12 difference can be made, the top of main chock insulator matter 11 withstands on the TFT corresponding to it, have gap between the secondary top of chock insulator matter 12 and the TFT corresponding to it, this period, difference Δ h was formed with the difference in height of secondary chock insulator matter 12 by main chock insulator matter 11; The difference in height of main chock insulator matter 11 and secondary chock insulator matter 12 preferably can more than 0.45 μm, thus the section difference formed is also more than 0.45 μm; Resin material can be utilized by the main chock insulator matter of the disposable formation of intermediate tone mask technique 11 and secondary chock insulator matter 12.On this basis, further secondary chock insulator matter 12 can be designed to structure as shown in Figure 3, comprise secondary chock insulator matter main body 121 and the metal level 122 being positioned at secondary chock insulator matter main body 121 top, utilize metal level 122 to improve the support strength of secondary chock insulator matter 12; Wherein the difference in height of main chock insulator matter 11 and secondary chock insulator matter main body 121 preferably can between 0.65 μm ~ 1.05 μm, and the thickness of metal level 122 preferably can be between 0.2 μm ~ 0.5 μm, thus the section that can form more than 0.45 μm is poor; Resin material can be utilized by the main chock insulator matter of the disposable formation of intermediate tone mask technique 11 and secondary chock insulator matter main body 121, then utilize and form metal level 122 at secondary chock insulator matter main body 121 top.
And for example: as shown in Figure 4, the TFT of the corresponding display device of main chock insulator matter 11 can be made, the grid line Gate of the corresponding display device of secondary chock insulator matter 12, the top of main chock insulator matter 11 withstands on the TFT corresponding to it, have gap between the secondary top of chock insulator matter 12 and the Gate corresponding to it, this period, difference Δ h was formed by the gap between secondary chock insulator matter 12 and Gate; Main chock insulator matter 11 preferably can more than 0.45 μm with the difference in height of secondary chock insulator matter 12; Resin material can be utilized by the identical main chock insulator matter 11 of the disposable height of formation of common masking process and secondary chock insulator matter 12, and make the difference in height of TFT and Gate more than 0.45 μm, thus the section forming more than 0.45 μm is poor; Or resin material can be utilized by the different main chock insulator matter 11 of the disposable height of formation of intermediate tone mask technique and secondary chock insulator matter 12, make the difference in height of main chock insulator matter 11 and secondary chock insulator matter 12 between 0.15 μm ~ 0.25 μm, and make the difference in height of TFT and Gate more than 0.3 μm, thus the section forming more than 0.45 μm is poor.
Further, can be the structure of the metal level comprising main chock insulator matter main body and be positioned at main chock insulator matter body top by the structural design of main chock insulator matter 11, to improve the support strength of main chock insulator matter 11; The structure that the structure of the secondary chock insulator matter 12 corresponding with Gate also can be designed to comprise secondary chock insulator matter main body and be positioned at the metal level in secondary chock insulator matter main body.
In the present embodiment, for main chock insulator matter and the secondary chock insulator matter of integrative-structure, it forms material preferably can adopt the various soft resin such as urethane resin or soft acrylic resin; For the chock insulator matter comprising chock insulator matter main body and metal level, the formation material of its chock insulator matter main body preferably can adopt the various soft resin such as urethane resin or soft acrylic resin, and the formation material of metal level can adopt the materials such as Mo, Al, ITO.
Embodiment five
Present embodiments provide a kind of display device, the chock insulator matter in this display device adopts the method for designing design of the chock insulator matter described in embodiment one ~ tri-.
According to the requirement to display device anti-pressure ability, the method for designing adopting the embodiment of the present invention to provide carries out appropriate design to the magnitude setting of chock insulator matter, enable the anchorage force that chock insulator matter provides sufficient, thus improve the anti-pressure ability of display device, what avoid that chock insulator matter arranges is very few, and the anchorage force provided is not enough to contend with extraneous pressure and the bad problem of the display that causes.
Further, in the display device that the present embodiment provides, its chock insulator matter comprises main chock insulator matter and secondary chock insulator matter, the method for designing that the quantity of main chock insulator matter and secondary chock insulator matter adopts inventive embodiments to provide respectively designs, thus make main chock insulator matter and secondary chock insulator matter with the use of, improve the anti-pressure ability of display device further.
Comparatively preferably, the pixel in display device can be divided into multiple pixel period, each pixel period comprises multiple pixel, in each pixel period main chock insulator matter and secondary chock insulator matter to arrange situation identical.A main chock insulator matter and multiple secondary chock insulator matter can be set in each pixel period further, the corresponding pixel of each chock insulator matter, the quantity sum of main chock insulator matter and secondary chock insulator matter is less than or equal to the quantity of the pixel included by each pixel period, thus makes most pixel in each pixel period all can obtain the support of chock insulator matter.
For the ease of conveniently finding out main chock insulator matter in the follow-up test carried out display device, preferably at least one pixel, secondary chock insulator matter can be set in the pixel around main chock insulator matter.
At least one chock insulator matter can be set to the structure of the metal level comprising chock insulator matter main body and be positioned at chock insulator matter body top in the present embodiment, because the formation material hardness of metal level is larger, therefore, it is possible to improve the support strength of chock insulator matter, and then improve the anti-pressure ability of display device.
Preferably can be arranged within 0.15 μm ~ 0.55 μm by the section difference at main chock insulator matter and secondary chock insulator matter position place, both to ensure that liquid crystal indicator has stronger anti-pressure ability, by guarantee, it has good liquid crystal undulate quantity.By making main chock insulator matter and secondary chock insulator matter corresponding thin film transistor (TFT) respectively, the top of main chock insulator matter withstands on the thin film transistor (TFT) corresponding to it, has gap between the top of secondary chock insulator matter and the thin film transistor (TFT) corresponding to it, forms section poor; The metal level that secondary chock insulator matter can be designed to comprise secondary chock insulator matter main body further and be positioned at secondary chock insulator matter body top.Or can make the corresponding thin film transistor (TFT) of main chock insulator matter, the corresponding grid line of secondary chock insulator matter, the top of main chock insulator matter withstands on the thin film transistor (TFT) corresponding to it, has gap between the top of secondary chock insulator matter and the grid line corresponding to it, forms section poor.
It should be noted that, the display device that the present embodiment provides such as can be ADS (Advanced SuperDimension Switch, senior super Wei Chang conversion), IPS (In-Plane Switching, plane conversion) type, FFS (Fringe Field Switching, boundary electric field switches), MVA (Mul ti-domain Vert icalAlignment, multidomain vertical orientation), PVA (Patterned Vertical Al ignment, image vertical orientation), TN (Twisted Nematic, twisted-nematic) etc. the liquid crystal indicator of type, also can be other to need to arrange the display device of chock insulator matter to the thick non-liquid crystal type supported of box, and the display device that the present embodiment provides is applicable to mobile phone, panel computer, televisor, display, notebook computer, digital album (digital photo frame), any product or parts with Presentation Function such as navigating instrument.
The foregoing is only the specific embodiment of the present invention; but protection scope of the present invention is not limited thereto; anyly be familiar with those skilled in the art in the technical scope that the present invention discloses, the change that can expect easily or replacement, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain of described claim.
Claims (19)
1. a method for designing for chock insulator matter, is characterized in that, comprising:
The unit Area of bearing reached is needed to compare Z according to obtaining chock insulator matter in display device to the requirement of display device anti-pressure ability, the Area of bearing of chock insulator matter of Z required for support organization's pixel and the area ratio of unit picture element, Z=(S1 ρ)/S2, wherein S1 is the topside area of unit chock insulator matter, ρ is the distribution density of chock insulator matter in unit pixel, and S2 is the area of unit pixel;
Obtain ρ according to S1, S2 and Z=(S1 ρ)/S2, according to obtained ρ, chock insulator matter is set in a display device.
2. the method for designing of chock insulator matter according to claim 1, it is characterized in that, the requirement of described basis to display device anti-pressure ability obtains chock insulator matter in display device needs the unit Area of bearing reached specifically to comprise than Z: according to the requirement of display device anti-pressure ability being obtained respectively to unit Area of bearing that unit Area of bearing that in display device, main chock insulator matter needs reach reaches than Z ' and secondary chock insulator matter needs than Z 〞;
Describedly obtain ρ according to S1, S2 and Z=(S1 ρ)/S2, chock insulator matter be set in a display device according to obtained ρ and specifically comprise:
Obtain according to Z=(S1 ρ)/S2, Z '=(S1 ' ρ ')/S2, wherein S1 ' is the topside area of the main chock insulator matter of unit, ρ ' is the distribution density of chock insulator matter main in unit pixel, Z 〞=(S1 〞 ρ 〞)/S2, wherein S1 〞 is the topside area of the secondary chock insulator matter of unit, and ρ 〞 is the distribution density of secondary chock insulator matter in unit pixel;
Obtain ρ ' according to S1 ', S2 and Z '=(S1 ' ρ ')/S2, and obtain ρ 〞 according to S1 〞, S2 and Z 〞=(S1 〞 ρ 〞)/S2;
Main chock insulator matter is set in a display device according to obtained ρ ', and secondary chock insulator matter is set in a display device according to obtained ρ 〞.
3. the method for designing of chock insulator matter according to claim 2, is characterized in that, describedly arranges main chock insulator matter in a display device according to obtained ρ ', and arranges secondary chock insulator matter in a display device according to obtained ρ 〞 and specifically comprise:
The pixel of display device is divided into multiple pixel period, and each described pixel period comprises multiple pixel;
Obtain the magnitude setting of main chock insulator matter in each described pixel period according to ρ ', and obtain the magnitude setting of secondary chock insulator matter in each described pixel period according to ρ 〞.
4. the method for designing of chock insulator matter according to claim 3, it is characterized in that, a main chock insulator matter and multiple secondary chock insulator matter is provided with in each described pixel period, the corresponding pixel of each chock insulator matter, the quantity sum of described main chock insulator matter and described secondary chock insulator matter is less than or equal to the quantity of the pixel included by each described pixel period.
5. the method for designing of chock insulator matter according to claim 4, is characterized in that, in the pixel around the pixel corresponding to described main chock insulator matter, does not arrange described secondary chock insulator matter at least one pixel.
6. the method for designing of the chock insulator matter according to any one of Claims 1 to 5, is characterized in that, chock insulator matter described at least one comprises chock insulator matter main body and is positioned at the metal level of described chock insulator matter body top.
7. the method for designing of the chock insulator matter according to any one of claim 2 ~ 5, is characterized in that, the section difference at described main chock insulator matter and described secondary chock insulator matter position place is within 0.15 μm ~ 0.55 μm.
8. the method for designing of chock insulator matter according to claim 7, it is characterized in that, the thin film transistor (TFT) of described main chock insulator matter and the corresponding display device of described secondary chock insulator matter difference, the top of described main chock insulator matter withstands on the thin film transistor (TFT) corresponding to it, has gap between the top of described secondary chock insulator matter and the thin film transistor (TFT) corresponding to it.
9. the method for designing of chock insulator matter according to claim 8, is characterized in that, described secondary chock insulator matter comprises secondary chock insulator matter main body and is positioned at the metal level of described secondary chock insulator matter body top.
10. the method for designing of chock insulator matter according to claim 7, it is characterized in that, the thin film transistor (TFT) of the corresponding display device of described main chock insulator matter, the grid line of the corresponding display device of described secondary chock insulator matter, the top of described main chock insulator matter withstands on the thin film transistor (TFT) corresponding to it, has gap between the top of described secondary chock insulator matter and the grid line corresponding to it.
11. 1 kinds of display device, is characterized in that, the chock insulator matter in described display device adopts the method for designing design of the chock insulator matter described in any one of claim 1 ~ 10.
12. display device according to claim 11, is characterized in that, described chock insulator matter comprises main chock insulator matter and secondary chock insulator matter.
13. display device according to claim 12, is characterized in that, described display device comprises multiple pixel period, and each described pixel period comprises multiple pixel; Be provided with a main chock insulator matter and multiple secondary chock insulator matter in each described pixel period, the corresponding pixel of each chock insulator matter, the quantity sum of described main chock insulator matter and described secondary chock insulator matter is less than or equal to the quantity of the pixel included by each described pixel period.
14. display device according to claim 13, is characterized in that, in the pixel around described main chock insulator matter, do not arrange described secondary chock insulator matter at least one pixel.
15. display device according to any one of claim 11 ~ 14, is characterized in that, chock insulator matter described at least one comprises chock insulator matter main body and is positioned at the metal level of described chock insulator matter body top.
16. display device according to any one of claim 12 ~ 14, it is characterized in that, the section difference at described main chock insulator matter and described secondary chock insulator matter position place is within 0.15 μm ~ 0.55 μm.
17. display device according to claim 16, it is characterized in that, the thin film transistor (TFT) of described main chock insulator matter and the corresponding display device of described secondary chock insulator matter difference, the top of described main chock insulator matter withstands on the thin film transistor (TFT) corresponding to it, has gap between the top of described secondary chock insulator matter and the thin film transistor (TFT) corresponding to it.
18. display device according to claim 17, is characterized in that, described secondary chock insulator matter comprises secondary chock insulator matter main body and is positioned at the metal level of described secondary chock insulator matter body top.
19. display device according to claim 16, it is characterized in that, the thin film transistor (TFT) of the corresponding display device of described main chock insulator matter, the grid line of the corresponding display device of described secondary chock insulator matter, the top of described main chock insulator matter withstands on the thin film transistor (TFT) corresponding to it, has gap between the top of described secondary chock insulator matter and the grid line corresponding to it.
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