CN104513968B - 气相成膜装置 - Google Patents

气相成膜装置 Download PDF

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Publication number
CN104513968B
CN104513968B CN201410512506.0A CN201410512506A CN104513968B CN 104513968 B CN104513968 B CN 104513968B CN 201410512506 A CN201410512506 A CN 201410512506A CN 104513968 B CN104513968 B CN 104513968B
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China
Prior art keywords
film
film formation
nitride
gas
forming
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CN201410512506.0A
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Chinese (zh)
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CN104513968A (zh
Inventor
须田昇
大石隆宏
米野纯次
卢柏菁
薛士雍
钟步青
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Hermes Epitek Corp
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Hermes Epitek Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
CN201410512506.0A 2013-10-04 2014-09-29 气相成膜装置 Active CN104513968B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-209507 2013-10-04
JP2013209507A JP6058515B2 (ja) 2013-10-04 2013-10-04 気相成膜装置

Publications (2)

Publication Number Publication Date
CN104513968A CN104513968A (zh) 2015-04-15
CN104513968B true CN104513968B (zh) 2017-04-12

Family

ID=52693369

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410512506.0A Active CN104513968B (zh) 2013-10-04 2014-09-29 气相成膜装置

Country Status (6)

Country Link
US (1) US20150096496A1 (https=)
JP (1) JP6058515B2 (https=)
KR (1) KR101681375B1 (https=)
CN (1) CN104513968B (https=)
DE (1) DE102014114099A1 (https=)
TW (1) TWI521089B (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102773048B (zh) * 2011-05-09 2017-06-06 波利玛利欧洲股份公司 生产环己酮肟的氨肟化反应器
TWI563542B (en) * 2014-11-21 2016-12-21 Hermes Epitek Corp Approach of controlling the wafer and the thin film surface temperature
JP6569406B2 (ja) * 2015-09-09 2019-09-04 セイコーエプソン株式会社 原子層堆積装置および原子層堆積の成膜方法
JP6685216B2 (ja) * 2016-01-26 2020-04-22 東京エレクトロン株式会社 成膜装置、成膜方法、プログラム及びコンピュータ可読記憶媒体
TWI612176B (zh) * 2016-11-01 2018-01-21 漢民科技股份有限公司 應用於沉積系統的氣體分配裝置
US10844490B2 (en) 2018-06-11 2020-11-24 Hermes-Epitek Corp. Vapor phase film deposition apparatus
CN214848503U (zh) 2018-08-29 2021-11-23 应用材料公司 注入器设备、基板处理设备及在机器可读介质中实现的结构
TWI680201B (zh) * 2018-09-27 2019-12-21 漢民科技股份有限公司 氣相沉積裝置及其蓋板與噴氣裝置
DE102018130140A1 (de) * 2018-11-28 2020-05-28 Aixtron Se Verfahren zur Herstellung eines Bestandteils eines CVD-Reaktors
DE102020101066A1 (de) * 2020-01-17 2021-07-22 Aixtron Se CVD-Reaktor mit doppelter Vorlaufzonenplatte
CN112323043A (zh) * 2020-10-30 2021-02-05 泉芯集成电路制造(济南)有限公司 一种气体分配器以及原子层沉积反应设备
CN119220962A (zh) * 2023-06-28 2024-12-31 中微半导体设备(上海)股份有限公司 晶圆承载装置、气相沉积设备及使用方法

Citations (2)

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CN101818333A (zh) * 2009-02-26 2010-09-01 日本派欧尼株式会社 Iii族氮化物半导体的气相生长装置
CN102687242A (zh) * 2010-04-12 2012-09-19 细美事有限公司 气体注入单元和使用该气体注入单元的薄膜气相沉积设备及方法

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JPH08181076A (ja) * 1994-10-26 1996-07-12 Fuji Xerox Co Ltd 薄膜形成方法および薄膜形成装置
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CN102687242A (zh) * 2010-04-12 2012-09-19 细美事有限公司 气体注入单元和使用该气体注入单元的薄膜气相沉积设备及方法

Also Published As

Publication number Publication date
KR20150040228A (ko) 2015-04-14
JP2015076417A (ja) 2015-04-20
JP6058515B2 (ja) 2017-01-11
TW201531589A (zh) 2015-08-16
US20150096496A1 (en) 2015-04-09
TWI521089B (zh) 2016-02-11
KR101681375B1 (ko) 2016-11-30
DE102014114099A1 (de) 2015-04-09
CN104513968A (zh) 2015-04-15

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