CN104488139A - 具有屏蔽件的低旁瓣反射器天线 - Google Patents
具有屏蔽件的低旁瓣反射器天线 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
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- H01Q15/16—Reflecting surfaces; Equivalent structures curved in two dimensions, e.g. paraboloidal
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- H01Q19/18—Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic using reflecting surfaces having two or more spaced reflecting surfaces
- H01Q19/19—Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic using reflecting surfaces having two or more spaced reflecting surfaces comprising one main concave reflecting surface associated with an auxiliary reflecting surface
- H01Q19/193—Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic using reflecting surfaces having two or more spaced reflecting surfaces comprising one main concave reflecting surface associated with an auxiliary reflecting surface with feed supported subreflector
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Abstract
具有碟式反射器的前馈反射器具有波导，其中该波导耦接至碟式反射器的近端部，从而沿着纵轴突出至碟式反射器内。电介质块可以耦接至波导的远端部并且副反射器可以耦接至电介质块的远端部。屏蔽件耦接至碟式反射器的外周。纵轴与焦点和屏蔽件的远端外周之间的线之间的对角为50度以下。
Description
技术领域
本发明涉及微波双反射器天线(reflector antenna)。更特别地，本发明提供低成本的自支撑前馈反射器天线，其中该自支撑前馈反射器天线具有针对反射器天线可配置的低旁瓣信号辐射图(pattern)特性，以满足诸如欧洲电信标准协会(ETSI)类别4辐射图包络(envelope)等的严格的辐射图包络标准。
背景技术
前馈双反射器天线将入射到主反射器上的信号引导至与主反射器的聚焦区域邻接地安装的副反射器，而该副反射器又将该信号通常经由馈送喇叭(horn)或孔引导至波导传输线，从而到达接收器的第一级。在使用双反射器天线来传输信号的情况下，这些信号从发送器系统的最后级经由波导行进至馈送孔、副反射器和主反射器，从而到达自由空间。
反射器天线的电气性能通常由以下进行表征：其增益、辐射图包络、交叉极化和回波损耗性能——高效的增益、辐射图包络和交叉极化特性对于高效的微波链路规划和协调而言是必要的，同时需要良好的回波损耗来进行高效的无线电操作。
具有窄辐射图包络的反射器天线使得能够将分开的反射器天线以较高的密度安装在诸如无线电塔等的共用支撑结构上，而不会在分开的点对点通信链路之间生成RF干涉。窄辐射图包络通信链路还提供使得能够在相同位置处重复再使用无线电频谱分配的优点，从而增加对给定数量的信道可用的链路的数量。
例如由ETSI提供了天线的辐射图包络(RPE)的工业接受标准测量。ETSI提供命名为类别1～类别4的四个RPE分类，其中类别4规格是最严格的。ETSI类别4RPE规格要求相对于ETSI类别3RPE规格的显著的改进。如图1a和1b所示，ETSI类别4RPE相对于ETSI类别3RPE的要求在旁瓣水平方面要求约10dB～12dB的改进，从而在无需使用附加频谱的情况下，得到可被分配的链路数量的35％-40％的提高。
以前，例如如图1c所示，满足ETSI类别4规格的反射器天线是Gregorian双反射器偏移型反射器天线。双偏移配置将副反射器15完全定位在从主反射器50到自由空间的信号路径之外，这要求大量附加结构以对准和/或完全包围大型光学系统。此外，由于双偏移配置的非对称性质，要求提高制造和/或组装精度的水平以避免产生交叉极化判别干扰。这些附加结构和/或路径对准调整的要求大大增加了所得到的天线组件的整体尺寸和复杂性，由此增加了制造、安装和日常维护成本。
深碟式(deep dish)反射器是使反射器焦距(F)与反射器直径(D)之比小于或等于0.25(与之相对的F/D是例如在更为传统的“平”碟设计中通常为0.35)的反射器碟。在2005年7月19日发行至Hills的标题为“Tuned Perturbation Cone Feed for Reflector Antenna”的共同拥有的美国专利6,919,855(US6919855)中公开了配置为与深碟式反射器一起使用的电介质锥型馈源(feed)副反射器的示例，在此通过引用包含其全部内容。US6919855利用具有副反射器表面和前锥表面的电介质块锥型馈源，其中该前锥表面具有绕电介质块的纵轴同心的多个向下成角度的非周期扰动。使锥型馈源和副反射器直径尽可能地最小化，以防止遮挡从反射器碟到自由空间的信号路径。尽管相对于现有设计存在显著改进，但这些结构具有如下信号模式，其中在这些信号模式中，馈源(feed boom)的副反射器边缘和远端边缘横跨包括(可能产生与馈源和/或副反射器的二次反射的)副反射器的接近反射器碟外周的区域和/或遮蔽(shadow)区域的反射器碟表面广泛地辐射信号的一部分，从而导致电气性能劣化。此外，电介质块中的多个成角度特征和/或台阶(step)需要复杂的制造过程，从而提高了整体制造成本。
深碟型反射器碟延伸了所得到的反射器天线的(沿着视轴)的长度，以使得反射器碟的远端部趋向于用作圆筒屏蔽件。因此，尽管在非深碟型反射器天线中是常见的，但诸如US6919855等的传统深碟式反射器天线配置通常不利用单独的向前突出的圆筒屏蔽件。
因此，本发明的目的是提供简化型反射器天线设备，其中该简化型反射器天线设备克服了现有技术的局限，并且由此呈现了如下解决方案，该解决方案使得自支撑副反射器前馈反射器天线在通常的微波通信链路所使用的整个工作频段上，能够满足最严格的辐射图包络电气性能。
附图说明
包括在本说明书中并构成本说明书的一部分的附图示出本发明的实施例，其中附图中的相同附图标记是指相同的特征或元件并且可能没有针对这些附图标记所出现的每幅图进行详细说明，并且连同以上给出的本发明的大致说明以及以下给出的实施例的详细说明一起，用来解释本发明的原理。
图1a是示出ETSI类别3和ETSI类别4共极化辐射图包络的要求之间的差异的示意图。
图1b是示出ETSI类别3和ETSI类别4交叉极化辐射图包络的要求之间的差异的示意图。
图1c是通常现有技术的Gregorian双反射器偏移型反射器天线的示意信号路径图。
图2a是示例性副反射器组件的示意剖视侧视图。
图2b是利用单独的金属碟型副反射器示出的、图2a的副反射器组件的分解示意剖视侧视图。
图3是安装在0.167F/D深碟式反射器内的图2b的副反射器组件的示意剖视侧视图。
图4是现有技术的电介质锥型副反射器组件的示意剖视侧视图。
图5是针对以22.4Ghz进行工作的图2a和图4的副反射器组件的E和H面初级辐射振幅模式建模比较图表。
图6是与ETSI类别4RPE和US6919855相比较的、针对安装在根据图10的0.167F/D碟式反射器内的图2的副反射器组件的E面辐射图范围数据比较图表。
图7是与ETSI类别4RPE和US6919855相比较的、针对安装在根据图10的0.167F/D碟式反射器内的图2a的副反射器组件的H面辐射图范围数据比较图表。
图8是针对图4的副反射器组件的E(上半部分)和H(下半部分)面初级能量场分布模型。
图9是针对图2a的副反射器组件的E(上半部分)和H(下半部分)面初级能量场分布模型。
图10是具有圆筒屏蔽件的示例性反射器天线的示意等距视图。
图11是图10的反射器天线的示意分解截面图。
图12是图10的反射器天线的示意截面图。
图13是具有呈向外渐缩的圆筒屏蔽件的示例性反射器天线的示意截面图。
图14是示出50度的对角的、具有.0.163F/D碟式反射器和屏蔽件的示例性反射器天线的示意半截面图。
图15是与ETSI类别4RPE相比较的、针对图14的反射器天线的以6.525GHz建模的E和H面辐射图数据图。注意，以辐射图的+-180度范围示出的非符合结果是由于建模软件计算限制所引起的并且应被忽略。
图16是示出50度的对角的、具有.0.25F/D碟式反射器和屏蔽件的示例性反射器天线的示意半截面图。
图17是与ETSI类别4RPE相比较的、针对图16的反射器天线的以6.525GHz建模的E和H面辐射图数据图。注意，以辐射图的+-180度范围示出的非符合结果是由于建模软件计算限制所引起的并且应被忽略。
图18是示出50度的对角的、具有.0.298F/D碟式反射器和屏蔽件的示例性反射器天线的示意半截面图。
图19是与ETSI类别4RPE相比较的、针对图18的反射器天线的以6.525GHz建模的E和H面辐射图数据图。注意，以辐射图的+-180度范围示出的非符合结果是由于建模软件计算限制所引起的并且应被忽略。
图20是示出40度的对角的、具有.0.163F/D碟式反射器和屏蔽件的示例性反射器天线的示意半截面图。
图21是与ETSI类别4RPE相比较的、针对图20的反射器天线的以6.525GHz建模的E和H面辐射图数据图。注意，以辐射图的+-180度范围示出的非符合结果是由于建模软件计算限制所引起的并且应被忽略。
图22是具有呈5度的向内渐缩的圆筒屏蔽件的示例性反射器天线的示意等距视图。
图23是图22的反射器天线的示意分解截面图。
图24是图22的反射器天线的示意截面图。
图25是图24的区域A的特写图。
图26是具有呈10度向内渐缩的圆筒屏蔽件的示例反射器天线的示意截面图。
图27是图26的区域B的特写图。
图28是相对于应用于圆筒屏蔽件的频率和渐缩的天线效率的所计算数据图。
图29是与具有呈5°度向内渐缩和ETSI类别4RPE的圆筒屏蔽件的相同的天线组件相比较的、针对安装在根据图10的具有圆筒屏蔽件的0.167F/D碟式反射器内的图2a的副反射器组件的H面辐射图范围数据比较图表。
具体实施方式
本发明人已意识到由尺寸被设计为使信号能量集中在反射器碟的中壁区域上的电介质锥型副反射器组件、以及与之成对出现的反射器碟外周处的改进的屏蔽所获得的在初级辐射图控制方面的改进，能够使得成本高效的自支撑副反射器前馈型反射器天线满足诸如ETSI类别4RPE等的极窄辐射图包络电气性能规格。
如图2a、2b和3所示，锥型辐射器副反射器组件1被配置为在支撑远端部20的副反射器15的一体的(unitary)电介质块10的波导过渡部5处与馈源波导3的端部耦接。副反射器组件1利用放大的副反射器直径来减小副反射器溢出。副反射器15的尺寸可以被设计为如下：例如，直径为所需工作频率(诸如所需微波频带的中频带频率)的2.5倍波长以上。示例性实施例的尺寸被设计为如下：外径为39.34mm并且最小电介质辐射部直径为26.08mm，其中这两者在22.4Ghz微波频带中的所需工作频率处，分别与2.94倍波长和1.95倍波长相对应。
位于电介质块10的波导过渡部5和副反射器支撑部30之间的电介质辐射部25的大小也增加。电介质辐射部25的尺寸可被设计为例如如下：最小直径为副反射器直径的至少3/5。例如如图4所示，放大的电介质辐射部25可操作于从波导3的端部向外引出信号能量，由此使在传统的电介质锥型副反射器配置中所观察到的该区域处的衍射最小化。传统的电介质锥的外径为28mm且“辐射区域”中的最小直径为11.2mm，其中这两者在22.4Ghz微波频带中的所需工作频率处，分别与2.09倍波长和0.84倍波长相对应。
沿着电介质辐射部的外径设置有多个沟部(corrugation)作为径向向内凹槽35。在本实施例中，多个凹槽是两个凹槽35(参见图2a和2b)。电介质辐射部25的远端凹槽40可以设置有开始副反射器支撑部30的成角度的远端侧壁45。远端侧壁45可以大致与远端部20的纵向邻接部平行；也就是说，远端侧壁45可以形成与支撑副反射器15的远端部20的纵向邻接锥形表面平行的锥形表面，以使得沿着该表面的电介质厚度相对于副反射器45大致恒定。
例如如图3所示，副反射器组件1的波导过渡部5可适于匹配所需的圆形波导内径，以使得可以使副反射器组件1纳入波导3并由波导3保持，其中该波导3在反射器天线的碟式反射器50内，在接近碟式反射器50的焦点52处支撑副反射器组件1。波导过渡部5可以插入波导3内，直到该波导的端部抵靠波导过渡部5的肩部55为止。
肩部55的尺寸可以被设计为如下：使电介质辐射部25与波导端部间隔开、以及/或者进一步将远端部20的外周(副反射器信号面相对于波导端部的最远纵向距离)定位在所需工作频率的至少0.75倍波长处。示例性实施例的尺寸被设计为如下：在22.4Ghz微波频带中的所需工作频率处与1.08倍波长相对应的14.48mm的纵向长度。为了比较，图3的传统电介质锥的尺寸被设计为8.83mm纵向长度，或者在相同的所需工作频率处的0.66倍波长。
可以将波导过渡部5的近端部65的一个或多个台阶60以及/或者一个或多个凹槽用于波导3和电介体块10的电介体材料之间的阻抗匹配的目的。
所示例的副反射器15具有过渡到远端锥形表面75的近端锥形表面70，其中该远端锥形表面75与近端锥形表面70相比设置有更低的相对于副反射器组件1的纵轴的角度。
如图2a最佳地所示，可以通过向电介质块10的远端部施加金属沉积、膜、片材或其它RF反射涂层来形成副反射器15。可选地，如图2b和3所示，可以单独形成副反射器15例如作为位于电介质块10的远端部上的金属碟80。
在应用0.167F/D碟式反射器50和屏蔽件90的情况下，例如如图10所示，副反射器组件1可以提供的在信号模式方面的令人惊讶的改进，特别是在20～60度的范围内。例如，如图6和7所示，E和H面这两者中的辐射在20～60度的范围内显著减少。
图8示出传统的副反射器组件的时间片辐射能量绘图模拟，从而示出辐射图向着碟式反射器表面的宽角度扩散、特别是绘制了沿着视轴将信号能量拉回的波导端部的衍射效应，从而使得有必要限制副反射器直径以防止显著的信号遮挡和/或导致次级反射/干涉劣化的电气性能的引入。
作为对比，图9示出示例性受控照射(illumination)锥形辐射器副反射器组件1的辐射能量绘图模拟，其中该辐射能量绘图模拟示出在辐射图主要指向与副反射器遮蔽区域和碟式反射器50的外周这两者间隔开的碟式反射器50的中部区域的情况下，利用副反射器组件1的0.167F/D比碟式反射器50的受控照射。本领域技术人员应当理解，通过应用深碟型碟式反射器50，大部分辐射图以增大的向外角度(而不是向下朝着被副反射器组件1遮蔽的区域)投射使得辐射图能够影响碟式反射器50的中部(mid-section)，而不需要碟式反射器50的直径不可接受地大。
在沿着一体的电介质块的外径形成的肩部55、台阶60和凹槽35各自被设置成径向向内的情况下，可以使电介质块的制造简化，由此降低整体制造成本。将远端表面的外周的尺寸设计成垂直于组件的纵轴提供了容易安装的基准面85，从而例如通过机械加工和/或喷射模塑进一步简化了电介质块10的制造工艺。
通过将附加屏蔽和/或辐射吸收材料应用于碟式反射器50的外周，可以以与最终天线效率相折中的方式获得针对视轴和/或副反射器溢出区域的辐射图的进一步校正。根据工作频率，范围测量展示了相对于US6919855的ETSI类别3型反射器天线配置的、圆筒屏蔽的ETSI类别4兼容反射器天线的改进了6～14％的天线效率。
如图10～12所示，例如，可以将屏蔽应用为耦接至碟式反射器50的外周的大致圆筒形的屏蔽件90。RF吸收材料95可以耦接至屏蔽件90的内径。可以以与所得到的反射器天线的总长度相折中的方式，针对碟式反射器50的F/D和辐射图来选择屏蔽件90的沿着反射器天线的纵轴的长度。对于较小的F/D反射器，由于馈源位置在碟式反射器50内更深，因此可能需要更短的纵向长度。例如，针对直径为2英尺和4英尺的0.167F/D碟式反射器50，碟式反射器焦点52和碟式反射器50的外周之间的、相对于反射器天线的纵轴的对角(subtendedangle)可以在40°～50°的范围内。可以根据来自由于所选择的副反射器组件配置而产生的初级辐射图的不想要的溢出能量的水平来选择屏蔽长度。保持该标准，对于2ft和4ft的示例，例如，可以选择屏蔽件长度为碟式反射器50的焦距的1～3倍。例如图13所示，可以可选地向屏蔽件90应用向外渐缩(taper)。
例如如图14～19所示，可以改变反射器碟50的F/D比和相应的屏蔽件长度，以获得纵轴与焦点和屏蔽件90的远端外周54之间的线之间的50度以下的对角，从而使得一系列不同F/D的碟式反射器50能够提供如下反射器天线解决方案，其中该反射器天线解决方案在不会不可接受地增加所产生的反射器天线的整体尺寸的情况下，满足诸如ETSI 4等的严格RPE规格。
对副反射器组件1和/或碟式反射器50表面的调整可以使得能够在不会超出所需的RPE规格的情况下，使屏蔽件90的所要求长度和/或反射器天线组件的整体长度最小化。由此，例如如图20和21所示，可以使所产生的反射器天线的整体尺寸和风载荷(wind load)特性最小化，这导致例如对角减小为40度以下，由此使得能够提高给定反射器天线组件的电气性能。
图15、17、19和21所示的碟式反射器和屏蔽件组合的辐射图是基于6.525GHz的工作频带的计算机模型。进一步的建模指示了在可替代的微波频率处的相似的性能，直到如下为止：组件的所选择规模开始接近工作频率的波长、以及/或者工作频率上升到一点，该点使得所产生的反射器天线的相应缩小的规模有助于成为电气性能的决定因素的成本高效的制造容限。
如图22～27所示，在辐射图接近所需RPE的关注区域与辐射图大大低于所要求的RPE的区域之间的辐射图折中中，可以通过应用径向向内渐缩来进一步调整辐射图，以使得屏蔽件90例如以相对于反射器天线的纵轴的角度大于零且直至10度的方式逐渐变为锥形(参见图26和27)。
可以将屏蔽件90的向内渐缩的最大角度选在屏蔽件90的缩小的远端直径开始遮挡信号的点处，由此不可接受地降低了天线的整体增益。例如，通过比较2ft直径、18GHz天线的各种屏蔽件几何结构(直圆筒形屏蔽件，5度的渐缩和10度的渐缩)，在图28中示出所计算出的效率(％)。平均来说，与直屏蔽2ft的18GHz天线相比，具有10°屏蔽件向内渐缩的2ft直径18GHz天线存在7％的效率下降。如图29所示，约为5°的屏蔽向内渐缩可以提供在辐射图改进和天线效率方面的天线性能的平衡，其中：在不会不可接受地影响其它所关注角度的情况下，在工作频率为18.7Ghz的情况下，在水平面中获得了30～50度的范围内的信号模式改进。
通过上述，应当理解，本发明可以给本领域带来具有改进的电气性能和/或显著的制造成本高效的反射器天线。由于前馈自支撑副反射器组件反射器天线具有轴对称天线结构，因此可以整体避免双偏移反射器天线结构的成本和复杂度。根据本发明的反射器天线可以坚固的、轻质量、并且可以以非常高的精度水平重复地、成本高效地制造。
部件表
| 1 | 副反射器组件 |
| 3 | 波导 |
| 5 | 波导过渡部 |
| 10 | 电介质块 |
| 15 | 副反射器 |
| 20 | 远端部 |
| 25 | 电介质辐射部 |
| 30 | 副反射器支撑部 |
| 35 | 凹槽 |
| 40 | 远端凹槽 |
| 45 | 远端侧壁 |
| 50 | 碟式反射器 |
| 52 | 焦点 |
| 54 | 远端外周 |
| 55 | 肩部 |
| 60 | 台阶 |
| 65 | 近端部 |
| 70 | 近端锥形表面 |
| 75 | 远端锥形表面 |
| 80 | 碟 |
| 85 | 基准面 |
| 90 | 屏蔽件 |
| 95 | RF吸收材料 |
| 97 | 天线罩 |
在上述说明中已经参考了具有已知等同物的材料、比率、整数和组件的情况下，这些等同物以仿佛单独陈述的方式包含于此。
尽管已经通过说明本发明的实施例说明了本发明、并且尽管已经非常详细地说明了实施例，但申请人的意图不是将所附权利要求书的范围局限或以任何方式限制于这些细节。本领域技术人员将容易明白其他的优点和变形。因此，本发明的较宽方面不限于所示和所述的具体细节、代表性设备、方法和例示示例。因此，可以在没有背离本申请人的一般创造性概念的精神和范围的情况下背离这些细节。此外，应当理解，可以在没有背离如所附权利要求书所定义的本发明的范围或精神的情况下对其进行改进和/或修改。
Claims (20)
1.一种前馈反射器天线，包括：
具有焦点的碟式反射器；
波导，其与所述碟式反射器的近端部相耦接，沿着纵轴突出至所述碟式反射器内；
电介质块，其与所述波导的远端部相耦接；
副反射器，其与所述电介质块的接近所述焦点的远端部相耦接；以及
大致圆筒形的屏蔽件，其与所述碟式反射器的外周相耦接，
其中，所述纵轴与所述焦点和所述屏蔽件的远端外周之间的线之间的对角为50度以下。
2.根据权利要求1所述的天线，其中，所述碟式反射器的反射器焦距与反射器直径之比为0.163以下。
3.根据权利要求1所述的天线，其中，所述碟式反射器的反射器焦距与反射器直径之比为0.25以下。
4.根据权利要求1所述的天线，其中，所述碟式反射器的反射器焦距与反射器直径之比为0.298以下。
5.根据权利要求1所述的天线，其中，所述对角为40度以下。
6.根据权利要求1所述的天线，其中，所述副反射器的直径的尺寸被设计为所需工作频率的2.5倍波长以上。
7.根据权利要求1所述的天线，其中，
所述电介质块是设置有波导过渡部和电介质辐射部的一体的电介质块，
所述电介质块在所述波导过渡部处耦接至所述波导，
所述电介质辐射部位于所述波导过渡部和所述副反射器之间；所述电介质辐射部的外径设置有多个径向向内凹槽；所述电介质辐射部的最小直径大于所述副反射器的直径的3/5。
8.根据权利要求7所述的天线，其中，所述多个凹槽是两个凹槽。
9.根据权利要求7所述的天线，其中，所述多个凹槽的底部宽度向着所述远端部减小。
10.根据权利要求7所述的天线，还包括在所述电介质辐射部和所述副反射器之间的副反射器支撑部，所述副反射器支撑部从所述电介质辐射部的远端凹槽延伸作为所述远端凹槽的成角度的远端侧壁。
11.根据权利要求10所述的天线，其中，所述成角度的远端侧壁与所述远端部的纵向邻接部大致平行。
12.根据权利要求1所述的天线，其中，所述电介质块的远端部设置有向着远端锥形表面过渡的近端锥形表面，与所述近端锥形表面相比，所述远端锥形表面相对于所述纵轴的角度较小。
13.根据权利要求1所述的天线，其中，所述屏蔽件向内渐缩。
14.根据权利要求13所述的天线，其中，所述屏蔽件以相对于所述纵轴呈大于0度至高达10度的角度向内渐缩。
15.根据权利要求1所述的天线，其中，所述屏蔽件的长度为所述碟式反射器的反射器焦距与反射器直径之比的1～3倍。
16.根据权利要求1所述的天线，其中，所述波导过渡部的尺寸被设计用来插入所述波导的端部，直到所述波导的端部抵靠所述波导过渡部的肩部为止。
17.一种前馈反射器天线的制造方法，包括以下步骤：
使波导耦接至碟式反射器的近端部；
使电介质块耦接至所述波导的远端部，使副反射器耦接至所述电介质块的远端部；以及
使大致圆筒形的屏蔽件耦接至所述碟式反射器的外周，
在焦点和所述屏蔽件的远端外周之间的沿着纵轴的对角为50度以下。
18.根据权利要求17所述的方法，其中，具有直径的所述副反射器的直径的尺寸被设计为所需工作频率的2.5倍波长以上。
19.一种前馈反射器天线，包括：
具有焦点的碟式反射器；
大致圆筒形的屏蔽件，其耦接至所述碟式反射器的外周，
其中，纵轴与所述焦点和所述屏蔽件的远端外周之间的线之间的对角为50度以下。
20.根据权利要求19所述的反射器天线，其中，所述反射器天线的辐射图包络小于欧洲电信标准协会类别4的辐射图包络。
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| FR2963487B1 (fr) * | 2010-08-02 | 2013-03-22 | Alcatel Lucent | Antenne a reflecteur parabolique |
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| US20130057444A1 (en) * | 2011-09-01 | 2013-03-07 | Andrew Llc | Controlled illumination dielectric cone radiator for reflector antenna |
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- 2014-05-13 KR KR1020147032767A patent/KR101545672B1/ko active IP Right Grant
- 2014-05-13 WO PCT/US2014/037756 patent/WO2015012940A1/en active Application Filing
- 2014-05-13 CN CN201480001421.4A patent/CN104488139A/zh active Pending
- 2014-05-13 IN IN2240MUN2014 patent/IN2014MN02240A/en unknown
- 2014-05-13 EP EP14789765.6A patent/EP2850695A4/en not_active Withdrawn
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| CN86104580A (zh) * | 1986-07-08 | 1987-02-11 | 孔令如 | 微波天线 |
| WO1998006147A1 (en) * | 1996-08-08 | 1998-02-12 | Endgate Corporation | A corrugated subreflector |
| FR2963487B1 (fr) * | 2010-08-02 | 2013-03-22 | Alcatel Lucent | Antenne a reflecteur parabolique |
| WO2013032557A1 (en) * | 2011-09-01 | 2013-03-07 | Andrew Llc | Low sidelobe reflector antenna |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101545672B1 (ko) | 2015-08-19 |
| EP2850695A4 (en) | 2015-08-05 |
| KR20150024313A (ko) | 2015-03-06 |
| WO2015012940A1 (en) | 2015-01-29 |
| IN2014MN02240A (zh) | 2015-10-09 |
| EP2850695A1 (en) | 2015-03-25 |
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