CN104465865A - Surface treatment method for poor printing products in battery piece production process and production method for battery pieces - Google Patents

Surface treatment method for poor printing products in battery piece production process and production method for battery pieces Download PDF

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Publication number
CN104465865A
CN104465865A CN201410629206.0A CN201410629206A CN104465865A CN 104465865 A CN104465865 A CN 104465865A CN 201410629206 A CN201410629206 A CN 201410629206A CN 104465865 A CN104465865 A CN 104465865A
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described
cleaning
surface treatment
treatment method
defective products
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CN201410629206.0A
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CN104465865B (en
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符昌京
许明金
方菊英
王家道
席斌
盛峰
潘定烈
曾德栋
王庆森
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海南英利新能源有限公司
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product
    • Y02P70/52Manufacturing of products or systems for producing renewable energy
    • Y02P70/521Photovoltaic generators

Abstract

The invention provides a surface treatment method for poor printing products in the battery piece production process. The surface treatment method includes the early cleaning step and the scrubbing step. In the early cleaning step, an aqueous solution containing 50% to 90% of metal matrix cleaning agent is adopted for primarily cleaning the poor printing products. In the scrubbing step, silver paste and argentalium paste which are left on the surfaces of the poor printing products cleaned in the early cleaning step are removed in a scrubbing mode. By the application of the surface treatment method for the poor printing products in the battery piece production process, the secondary productivity of the poor printing battery pieces is improved, and the number of the poor printing products is reduced.

Description

The production method of defective products surface treatment method and cell piece is printed in cell piece production process

Technical field

The present invention relates to manufacture of solar cells field, in a kind of cell piece production process, print the production method of defective products surface treatment method and cell piece.

Background technology

Along with the day of global energy is becoming tight, solar energy is with pollution-free, and the exclusive advantages such as the market space is large are subject to the extensive attention of countries in the world.Numerous major company drops into solar cell research and development and production industry in the world.Obtain electric power from solar energy, need carry out light-to-current inversion to realize by solar cell, silicon solar cell is a kind of absorption solar radiation effectively and makes it to be converted into the semi-conductor electronic device of electric energy, is widely used in various flare-aircraft electricity generation system.

The transformation efficiency of solar cell is the important symbol weighing cell piece quality, and the raising of cell conversion efficiency simultaneously is also the reduction to silicon materials relative cost.But in the silkscreen process process of cell piece, two process procedures of back aluminium printing and front silver printing there will be the underproof product of printing, the raising of printing defective products amount also can increase recycling sheet quantity.And recycle the secondary of sheet or three Commercial cultivation directly have influence on cell piece outward appearance and transformation efficiency thereof, how improving the secondary productivity ratio of printing defective products and reduce printing defective products quantity, is that current each enterprise stands in the breach the technical problem that will solve.

Two kinds of methods are had for the technique of doing over again of silkscreen process: the first again prints after adopting the surface of organic solvent wiping abnormal silicon chip in prior art, this method is the ability of the dissolved organic matter utilizing organic solvent to have, and reaches the object of the metal paste dissolving silicon chip surface printing; Second method makes chemically cleaning silicon chip, namely first removes the aluminium paste of silicon chip back side with HCl cleaning fluid, then removes the silver slurry of silicon chip surface with alcohol, then use HCl, H 2o 2and H 2the mixed solution of O carries out degree of depth cleaning.

Existing these two kinds printing defective products processing modes not only increase the consumption of alcohol, and multiple-contact industrial alcohol can affect the healthy of people, there is potential safety hazard; Secondly the printing bad quantity produced in process of production is too much, increases the weight of teams and groups' pad workload; Owing to being soaked into the temporal restriction of cleaning agent liquid, cannot improve cleaning quantity, cleaning is in time just directly not overstocked to cause bad of unnecessary printing, affect follow-up cleaning performance, form spot sheet, reduce cell piece outward appearance and transformation efficiency thereof, virtually add the production cost of company.

For these reasons, be necessary to propose a kind of effective method, in order to improve the secondary productivity ratio of printing defective products and to reduce printing defective products quantity.

Summary of the invention

The present invention aims to provide the production method of printing defective products surface treatment method and cell piece in a kind of cell piece production process, to improve the secondary productivity ratio of printing defective products and to reduce printing defective products quantity.

To achieve these goals, according to an aspect of the present invention, provide the surface treatment method printing defective products in a kind of cell piece production process, specifically comprise cleaning step and wiping step in early stage, its mid-early stage cleaning step be adopt the aqueous solution containing 50% ~ 90% Metal Substrate cleaning agent once to clean described printing defective products; Wiping step adopts the mode of wiping to remove the silver slurry of the described printing defective products remained on surface after described cleaning step cleaning in early stage and silver-colored aluminium paste.

Further, in earlier stage in cleaning step, after once cleaning, the step adopting water described printing defective products to be carried out to secondary cleaning is also comprised.

Further, in surface treatment method, after wiping step, also comprise later stage cleaning step, later stage cleaning step comprises: adopt the aqueous solution containing 50% ~ 90% Metal Substrate cleaning agent to carry out three cleanings to printing defective products.

Further, in later stage cleaning step, after three cleanings, also comprise and adopt water to carry out four cleanings to the printing defective products after three cleanings.

Further, one time cleaning step adopts ultrasonic infusion method, and soak time is 10min ~ 15min, and soaking temperature is 70 DEG C ~ 90 DEG C, and ultrasonic frequency is 1.0HZ ~ 1.5HZ.

Further, in wiping step, adopt metal ion cleaning agent wiping printing defective products surface silver slurry slurry, and adopt the silver-colored aluminium paste slurry on alcohol or turpentine oil wiping printing defective products back surface field surface.

Further, in three cleaning steps, adopt ultrasonic wave infusion method, and soak time is 10min ~ 15min, soaking temperature is 70 DEG C ~ 90 DEG C, and ultrasonic frequency is 1.0HZ ~ 1.5HZ.

Further, Metal Substrate cleaning agent is WIN-152, JJ-790 or PTE-3022D.

Further, in surface treatment method, also comprise the step of oven dry after later stage cleaning step, and bake out temperature is 180 DEG C ~ 210 DEG C, drying time is 10min ~ 20min.

According to a further aspect in the invention, provide a kind of cell piece production method, it is characterized in that, cell piece production method comprises:

Reclaim in cell piece production process and print defective products;

Adopt the surface of above-mentioned surface treatment method to described printing defective products to process, obtain silicon chip to be printed; And

Described silicon chip to be printed is gone into operation again and prepares cell piece.

Apply the production method of printing defective products surface treatment method and cell piece in cell piece production process of the present invention, by adopting the Metal Substrate cleaning agent aqueous solution, printing defective products is once cleaned, utilize Metal Substrate cleaning agent to dissolve silver slurry and the aluminium paste on printing defective products surface, thus reach the object removing surface metal ion; Meanwhile, the silver adopting the method for wiping to remove through the printing defective products remained on surface of previous step cleaning is starched and aluminium paste, removes the vestige-grid line print of coated surface and the silver-colored aluminium paste of back surface field further.Make silicon chip surface clean-up performance better, be suitable for again again applying silver and starch and aluminium paste, obtain qualified cell piece, thus after improve brush well, the secondary productivity ratio of bad cell piece prints defective products quantity with reducing.

Embodiment

It should be noted that, when not conflicting, the embodiment in the application and the feature in embodiment can combine mutually.The present invention is described in detail below in conjunction with embodiment.

Introduce as background technology part, for the low defect many with printing defective products quantity of the secondary productivity ratio of printing defective products in prior art.In order to solve this technical problem, inventor provides in a kind of cell piece production process and prints defective products surface treatment method.The method comprises cleaning step and wiping step in earlier stage.Wherein, the Metal Substrate cleaning agent aqueous solution is adopted once to clean printing defective products in cleaning step in early stage.The silver adopting the mode of wiping to remove through the printing defective products remained on surface of previous step cleaning in wiping step is starched and silver-colored aluminium paste.

The present invention, by employing is carried out first time cleaning containing the Metal Substrate cleaning agent aqueous solution to printing defective products, utilizes metal and cleaning agent to dissolve silver slurry and the aluminium paste on printing defective products surface, thus reaches the object removing surface metal ion.And adopt the mode of wiping to remove silver slurry and the aluminium paste of the printing defective products remained on surface after cleaning step cleaning premenstruum (premenstrua), remove further the grid line print remained on coated surface and the silver-colored aluminium paste remained in back surface field.Make silicon chip surface clean-up performance better, be suitable for again again applying silver and starch and aluminium paste, obtain qualified cell piece, thus after improve printing well, the secondary productivity ratio of bad cell piece prints defective products quantity with reducing.

In above-mentioned surface treatment method, preferably in early stage cleaning step, after completing once cleaning, also comprise the step of with water, printing defective products being carried out to secondary cleaning.In early stage cleaning step, water can be utilized to remove the mixture being attached to printing defective products surface by the process procedure of secondary cleaning, such as clean intermixture to starch or the reactant of aluminium paste with silver, ambient impurities and silver slurry, the complex reaction thing etc. of aluminium paste or cleaning intermixture and ambient impurities, by removing the residual mixture being attached to printing defective products surface, the consumption of the follow-up wiping agent adopted at wiping processing step can be reduced, and reduce the impact of these residual mixture on wiping agent in follow-up wiping processing step, optimize wiping effect, and then obtain the silicon chip that can recycle.

Adopting said method step to carry out surface treatment to printing defective products in cell piece production process, just can obtain the silicon chip that can recycle.In order to optimize silicon chip performance, in a preferred embodiment, after carrying out wiping step to printing defective products surface, also comprise later stage clean step, this later stage cleaning step comprises: adopt the aqueous cleaning solution of containing metal based cleaning agent solution to carry out three cleanings to printing defective products.Can starch with silver the mixture reacted to the cleaning intermixture of the grid line print chip and back surface field that are attached to coated surface by this later stage cleaning step to clean further, silicon chip surface so not only can be made to obtain better smoothness and cleanliness factor but also can remove or reduce the bonding force of some mixtures and silicon face, being conducive to the carrying out that next step cleans.

More preferably, in above-mentioned post-processing steps, after three cleanings, also comprise and adopt water to carry out four cleanings to the printing defective products after three cleanings.The effect that water in increasing water cleaning (four cleanings) step and clean early stage in later stage cleaning process cleans (secondary cleaning) step is identical, is all utilize water to remove the mixture being attached to printing defective products surface.Water cleaning (four cleanings) step is increased in later stage cleaning process, mainly last washing away is carried out to residual in last link, to be attached to silicon face Metal Substrate cleaning agent and binding mixtures, play the perfect effect that last link is cleaned, not only ensure there is no silver paste and aluminum slurry, also there is no unnecessary kish based cleaning agent simultaneously.

In above-mentioned surface treatment method, cleaning step can adopt spray process or infusion method for the first time.As long as can make fully to contact to dissolve its surface silver containing the Metal Substrate cleaning agent aqueous solution and printing defective products surface to starch or aluminium paste.In the preferred embodiment of the present invention, above-mentioned first time cleaning step employing is ultrasonic infusion method.By the mode of soaking, bad printed sheet is cleaned, the omnibearing cleaning not leaving dead angle can be played.Be equipped with ultrasonic vibration simultaneously, can be conducive to making vibrate with printing defective products surface size containing the Metal Substrate cleaning agent aqueous solution contact, promote that printing defective products surface size fully dissolves, optimization solute effect.

More preferably, when adopting this ultrasonic infusion method, can accelerate containing the Metal Substrate cleaning agent aqueous solution the rate of dissolution of silver-colored aluminium paste with silver slurry by improving soaking temperature, and impel the adhesive in silver slurry at high temperature to go bad by improving soaking temperature, to reduce the sticky viscosity of silver slurry, improve the separative efficiency of slurry and silicon chip.In the preferred embodiment of the present invention, the soak time of above-mentioned ultrasonic infusion method is 10min ~ 15min, and soaking temperature is 70 DEG C ~ 90 DEG C, and ultrasonic frequency is 1.0HZ ~ 1.5HZ.By the coordination to ultrasonic frequency, scavenging period and cleaning temperature, make between three, to reach a balance, and then optimize the cleaning performance once cleaned.

In the preferred embodiment of the present invention, the Metal Substrate cleaning agent used include but not limited in WIN-152, JJ-790 or PTE-3022D one or more.

State on the invention in method, bad of the printing of cleaning step cleaning premenstruum (premenstrua) is upper also can exist a part of residual slurry unavoidably, in order to remove this part residual slurry, proposes the surface treatment method that cleaning in early stage coordinates wiping process simultaneously in the present invention.As long as remove the silver slurry of printing bad remained on surface and silver-colored aluminium paste by the mode of wiping in the step of wiping.In the preferred embodiment of the present invention, adopt and according to the type of slurry, the mode that slurry carries out independent wiping is processed.This method can remove the silver-colored aluminium paste and silver slurry that remain in printing defective products surface targetedly, and then can optimizing surface treatment effect.

More preferably, above-mentioned wiping step comprises: the silver slurry slurry adopting Metal Substrate cleaning agent wiping printing defective products, simultaneously and adopt the silver-colored aluminium paste slurry on alcohol or turpentine oil wiping printing defective products back surface field surface.In this approach, the silver-colored aluminium paste slurry on alcohol or turpentine oil wiping printing defective products back surface field surface is utilized.

In this cleaning step, utilize the silver slurry grid line of pure Metal Substrate cleaning agent wiping coated surface, the vestige of coated surface can well be removed, but according to cleaning experience in the past, select alcohol wipe silver slurry grid line can not obtain good effect herein, cause coated surface there is silver-colored slurry residual.And the silver-colored aluminium paste slurry printing the back surface field of defective products is mainly based on aluminium paste slurry, so place selects alcohol or turpentine oil wiping to print the back surface field of bad, in back surface field, the existence of a small amount of silver does not affect cleaning performance.

In above-mentioned surface treatment method, cleaning step can adopt spray process or infusion method for the third time.As long as Metal Substrate detergent solution and the surface of the printing defective products after wiping process can be made fully contacts to dissolve further and clean still to remain in after wiping step and print that defective products is surperficial silver-coloredly to be starched or aluminium paste.In the preferred embodiment of the present invention, above-mentioned third time cleaning step identical with the step of once cleaning, be all that what to adopt is ultrasonic infusion method.In practical operation, a ultrasonic fermentation vat in place can be set, complete once cleaning and three cleanings respectively,

More preferably, the two ultrasonic fermentation vats in place can be set respectively, be formed and process streamline continuously, with speed up processing.More preferably, in above-mentioned three cleaning steps, the soak time of ultrasonic wave infusion method is 10min ~ 15min, and soaking temperature is 70 DEG C ~ 90 DEG C, and ultrasonic frequency is 1.0HZ ~ 1.5HZ.The mixed solution that wherein preferred used Metal Substrate detergent solution is Metal Substrate cleaning agent and water..

More preferably Metal Substrate cleaning agent includes but not limited to one or more in WIN-152, JJ-790 or PTE-3022D.Above cleaning agent adsorbs the novel detergent product of the medicament that various auxiliary agent synthesizes by fine particulate alkalescent, the active abrasive particle of natural interface is adopted to be raw material, coordinating multiple actives and bactericide, polishing agent, that the green technology such as agent and unique bright factor high-tech is seen through in import is formulated, is a kind of multi-functional, efficient comprehensive Environment protection cleaning care product.Be the decontamination product of Modern New, clean effect is unique, and purposes is wide, to human body skin without any side effect.By active abrasive particle be help with abrasive particle in pollute containing all kinds of serious tough stains more thoroughly can be removed fast with slight soft friction during unique cleaning agent matching purge.

In above-mentioned surface treatment method, second time cleaning and the 4th cleaning step can adopt identical scheme, and it can adopt spray process or infusion method.Wherein preferably adopt spray process, more preferred spray time 30min spray pressure 1Mpa, shower water temperature 40 DEG C.

In above-mentioned surface treatment method, preferably after later stage water cleaning, also comprise the step of oven dry, with the evaporation of the silicon wafer surface cleaning liquid formed after accelerating cleaning step postmenstruation.Wherein preferably bake out temperature is 180 DEG C ~ 210 DEG C, and drying time is 10min ~ 20min.Dry at 180 DEG C ~ 210 DEG C, remove the water of silicon chip surface in last link, final obtain the high and silicon chip of drying of surface cleanliness, make silicon chip directly can enter again the production technology of cell piece.

Simultaneously, present invention also offers a kind of cell piece production method, the method comprises reclaiming in cell piece production process prints defective products, adopt the above-mentioned surface of surface treatment method to described printing defective products of the present invention to process, obtain silicon chip to be printed and silicon chip to be printed is gone into operation again and prepare cell piece.The unit for electrical property parameters of the cell piece that this method provided by the present invention is produced is normal, and cell piece qualification rate reaches 1.59%.

Be described in further detail the present invention below in conjunction with specific embodiment, these embodiments can not be interpreted as restriction the present invention scope required for protection:

Embodiment 1

In rinse bath, add the aqueous solution containing 50%win-152 cleaning agent, fully stir, water and cleaning agent are merged completely, and heats to the solution of rinse bath, when the temperature of the aqueous solution reaches 50 DEG C, open ultrasonic wave, frequency setting is 0.5HZ, cleaning 5min.With the wet cloth of immersion, wiping is carried out to silicon chip surface afterwards.

Embodiment 2

In rinse bath, add the aqueous solution containing 70%win-152 cleaning agent, fully stir, water and cleaning agent are merged completely, and heats to the solution of rinse bath, when the temperature of the aqueous solution reaches 70 DEG C, open ultrasonic wave, frequency setting is that 1.0HZ cleans 10min.Afterwards silicon chip is put into pure water rinse bath, carry out second time cleaning with water, the wet cloth that second time has cleaned rear immersion carries out wiping to silicon chip surface.

Embodiment 3

In rinse bath, add the aqueous solution containing 90%win-152 cleaning agent, fully stir, water and cleaning agent are merged completely, and heats to the solution of rinse bath, when the temperature of the aqueous solution reaches 80 DEG C, open ultrasonic wave, frequency setting is that 1.3HZ cleans 13min.Afterwards silicon chip is put into pure water rinse bath, carry out second time cleaning with water, adopt water to carry out second time cleaning.Carry out wiping with the wet cloth of infusing drugs in wine essence to silicon chip surface, the aqueous solution that the complete rear use of wiping contains 50%win-152 cleaning agent carries out cleaning again, and mixeding liquid temperature is 50 DEG C, and soak time is 5min, and ultrasonic frequency is 0.5HZ.

Embodiment 4

In rinse bath, add the aqueous solution containing 50%JJ-790 cleaning agent, fully stir, water and cleaning agent are merged completely, and heats to the solution of rinse bath, when the temperature of the aqueous solution reaches 90 DEG C, open ultrasonic wave, frequency setting is that 1.5HZ cleans 15min.Afterwards silicon chip is put into pure water rinse bath, carry out second time cleaning with water, adopt water to carry out second time cleaning.With the wet cloth of infusing drugs in wine essence, wiping is carried out to silicon chip surface, the aqueous solution that the complete rear use of wiping contains 70%JJ-790 cleaning agent carries out cleaning again, mixeding liquid temperature is 70 DEG C, soak time is 10min, ultrasonic frequency is 1.0HZ, silicon chip is put into pure water groove water again and clean silicon chip surface after having carried out above-mentioned cleaning.

Embodiment 5

In rinse bath, add the aqueous solution containing 90%PTE-3022D cleaning agent, fully stir, water and cleaning agent are merged completely, and heats to the solution of rinse bath, when the temperature of the aqueous solution reaches 85 DEG C, open ultrasonic wave, frequency setting is that 1.2HZ cleans 11min.Afterwards silicon chip is put into pure water rinse bath, carry out second time cleaning with water, water carries out second time cleaning.With metal ion cleaning agent wiping printing defective products surface silver slurry slurry, and adopt alcohol wipe to print the silver-colored aluminium paste slurry on defective products back surface field surface, the aqueous solution that the complete rear use of wiping contains 90%JJ-790 cleaning agent carries out cleaning again, mixeding liquid temperature is 90 DEG C, soak time is 15min, ultrasonic frequency is 1.5HZ, silicon chip is put into pure water groove water again and clean silicon chip surface after having carried out above-mentioned cleaning.

Embodiment 6

In rinse bath, add the aqueous solution containing 90%PTE-3022D cleaning agent, fully stir, water and cleaning agent are merged completely, and heats to the solution of rinse bath, when the temperature of the aqueous solution reaches 85 DEG C, open ultrasonic wave, frequency setting is that 1.2HZ cleans 11min.Afterwards silicon chip is put into pure water rinse bath, carry out second time cleaning with water, carry out second time cleaning with water.With metal ion cleaning agent wiping printing defective products surface silver slurry slurry, and adopt the silver-colored aluminium paste slurry printing defective products back surface field surface described in turpentine oil wiping, the aqueous solution that the complete rear use of wiping contains 90%JJ-790 cleaning agent carries out cleaning again, mixeding liquid temperature is 85 DEG C, soak time is 13min, ultrasonic frequency is 1.4HZ, silicon chip is put into pure water groove water again and clean silicon chip surface after having carried out above-mentioned cleaning after having carried out above-mentioned cleaning.After four cleanings are carried out to silicon chip, silicon chip is put into drying box and carries out drying, under the temperature of drying box being arranged on 180 DEG C of temperature, dry 10min.

Embodiment 7

Embodiment 7 is with the difference implementing gift 6, and final step dries 15min under the temperature of drying box being arranged on 195 DEG C of temperature.

Embodiment 8

Embodiment 8 is with the difference implementing gift 6, silicon chip is put into pure water groove water again and clean silicon chip surface after having carried out above-mentioned cleaning.

Comparative example 1

The aqueous solution containing 50% alcohol is added in rinse bath, abundant stirring, water and cleaning agent are merged completely, 50 DEG C are heated to the solution in rinse bath, open ultrasonic frequency and be arranged on 0.5Hz, with the wet cloth be immersed in alcohol, wiping is carried out to silicon chip surface afterwards, finally silicon chip is put into drying box, dry 5min at the temperature of 100 DEG C.

Comparative example 2

In rinse bath, add the aqueous solution containing 80% alcohol, fully stir, water and cleaning agent are merged completely, 80 DEG C are heated to the solution in rinse bath.Open ultrasonic frequency and be arranged on 1.5Hz.With the wet cloth be immersed in alcohol, wiping is carried out to silicon chip surface afterwards, finally silicon chip is put into drying box, dry 10min at the temperature of 180 DEG C.

The silicon chip recycling above embodiment and comparative example acquisition makes cell piece from the 6th process procedure newly entering following step:

(1) silicon chip inspection; (2) etching and surface wool manufacturing; (3) P diffusion: (4) remove phosphorosilicate glass: (5) anti-reflecting layer plated film: (6) backplate printing and drying; (7) back surface field printing and drying; (8) front electrode printing and drying; (9) front-back Metal Contact co-sintering; (10) Laser edge knot isolation; (11) Photoelectric Detection and classification.

Utilize simple test circuit, the cell piece utilizing above-mentioned silicon chip to produce and the normal cell piece produced carried out to the test of unit for electrical property parameters under following test condition:

(1) 25 DEG C, the temperature measurement system used in production, accuracy is ± 2 DEG C;

(2) AM1.5 ground standard solar spectrum adopts the AM1.5 standard solar spectrum of global radiation;

(3) 1000w/m 2, 1000w/m 2it is the radiation of the light of standard testing solar cell.

Relate to the test of following unit for electrical property parameters:

Rsh: the surface leakage produced along battery edge by surperficial pickup, along microfissure, grain boundary, crystal defect and the leakage current that formed after the irregular diffusion between dislocation and crystal boundary or electrode metallization diffusion.

Uoc: when solar cell is in open-circuit condition, the size of corresponding photoelectric current produces electromotive force, i.e. open circuit voltage.

Isc: the P-N junction under illumination, during external circuit short circuit, flows out from P end, through external circuit, from the electric current that N section flows into, i.e. and short circuit current.

Irevl: after having illumination, built-in power plant reduces, and the electric current produced because of diffusion by electronics and hole becomes dark current.

FF: the ratio of the peak power output of solar cell and open circuit voltage and short circuit current product, is called fill factor, curve factor.

Ncell: conversion efficiency.

Rs: series resistance.

Testing result: as shown in table 1.

The performance parameter contrast of the cell piece made after the silicon chip after table 1. cleans is as following table:

As can be seen from above-mentioned cell piece parameter, the performance parameter of the cell piece prepared by the wiping technique of the application is better than the performance parameter of the cell piece obtained with old technology wiping, but a little less than the performance parameter of normal cell piece.Utilize the percentage of damage of wiping technique cell piece of the present invention to only have 1.72% simultaneously, and the percentage of damage of the cell piece obtained by common wiping technique is 2.52%, in sum, improve the operating efficiency of pad product qualified rate, printing pad, indirectly reduce the production cost in workshop.

The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.

Claims (11)

1. print a surface treatment method for defective products in cell piece production process, it is characterized in that, described surface treatment method comprises:
In earlier stage cleaning step: adopt the aqueous solution containing 50% ~ 90% Metal Substrate cleaning agent once to clean described printing defective products; And
Wiping step: adopt the mode of wiping to remove the silver slurry of the described printing defective products remained on surface after described cleaning step cleaning in early stage and silver-colored aluminium paste.
2. surface treatment method according to claim 1, is characterized in that, in described early stage cleaning step, after once cleaning, also comprises the step adopting water described printing defective products to be carried out to secondary cleaning.
3. surface treatment method according to claim 2, it is characterized in that, in described surface treatment method, after described wiping step, also comprise later stage cleaning step, described later stage cleaning step comprises: adopt the aqueous solution containing 50% ~ 90% Metal Substrate cleaning agent to carry out three cleanings to described printing defective products.
4. surface treatment method according to claim 3, is characterized in that, in described later stage cleaning step, after described three cleanings, also comprises and adopts water to carry out four cleanings to the described printing defective products after described three cleanings.
5. the surface treatment method described in any one of Claims 1-4, it is characterized in that, a described cleaning step adopts ultrasonic infusion method, and soak time is 10min ~ 15min, soaking temperature is 70 DEG C ~ 90 DEG C, and ultrasonic frequency is 1.0HZ ~ 1.5HZ.
6. surface treatment method according to any one of claim 1 to 4, it is characterized in that, in described wiping step, adopt described in the wiping of metal ion cleaning agent and print defective products surface silver slurry slurry, and adopt the silver-colored aluminium paste slurry printing defective products back surface field surface described in alcohol or turpentine oil wiping.
7. surface treatment method according to claim 4, is characterized in that, in described three cleaning steps, adopt ultrasonic wave infusion method, and soak time is 10min ~ 15min, soaking temperature is 70 DEG C ~ 90 DEG C, and ultrasonic frequency is 1.0HZ ~ 1.5HZ.
8. surface treatment method according to any one of claim 1 to 7, is characterized in that, described Metal Substrate cleaning agent is WIN-152, JJ-790 or PTE-3022D.
9. surface treatment method according to claim 4, is characterized in that, in described surface treatment method, also comprises the step of oven dry in the rear after phase cleaning step, and bake out temperature is 180 DEG C ~ 210 DEG C, and drying time is 10min ~ 20min.
10. a cell piece production method, is characterized in that, described cell piece production method comprises:
Reclaim the printing defective products in cell piece production process;
Adopt the surface of surface treatment method to described printing defective products according to any one of claim 1 to 9 to process, obtain silicon chip to be printed; And
Described silicon chip to be printed is gone into operation again and prepares cell piece.
CN201410629206.0A 2014-11-10 2014-11-10 The production method of defective products surface treatment method and cell piece is printed in cell piece production process CN104465865B (en)

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