CN104425653A - 用于薄层太阳能电池的附加的底层 - Google Patents
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Abstract
本发明涉及一种用于薄层太阳能电池的附加的底层。本发明的主题是一种用于制造CdTe薄层太阳能电池或者用于它的半成品的改进的方法，以及根据所述方法的薄层太阳能电池。所述方法设置：施布附加的增附层，该增附层在前接触层后施加到该前接触层上，以便改进随后的CdS层的生长。作为用于增附层的特别优选的材料，优选以单层来设置CdTe。
Description
技术领域
本发明的主题是一种用于制造CdTe薄层太阳能电池或者它的半成品的、改进的方法，以及根据所述方法的薄层太阳能电池，所述方法设置：施布附加的底层(Grundierungsschicht)，该底层在前接触层后施加到该前接触层上，以便改进随后的CdS层的生长。
背景技术
在根据现有技术制造的薄层太阳能电池时，在衬底，通常是玻璃上施加透明的前接触层(例如TCO-transparent conducting oxide(透明导电氧化物))。在该前接触层上沉积由纯的或者经改性的CdS(硫化镉)组成的层，随后把CdTe层(碲化镉)沉积到该前接触层上。最后进行背接触层的施加。
CdS层的施加根据现有技术以CSS(Close spaced sublimation，近距离升华)法进行，其中，具有预先准备的前接触层的玻璃衬底在具有CdS的坩埚上运动经过。该坩埚被加热并且待蒸镀的材料(CdS)从坩埚中蒸发(升华)并且沉积在衬底的前接触层上，该前接触层与坩埚相比保持在更低的温度上。
详细研究表明，在坩埚中作为颗粒存在的CdS在升华时分解成其组成部分(2CdS->2Cd+S2)。这些组成部分分开地到达前接触层的表面并且在那里重新结合成CdS。
CdTe层的随后的施加同样优选用CSS法进行。
最后施加优选作为层序列的背接触层。
在所述方法的情况下并且也在下文中，清洁步骤、回火步骤和密封步骤根据现有技术是公知的并且不详细阐述。防反射层和保护层(例如背侧薄板或玻璃)的施加也是前提。
在大规模的使用中进行CdS层和CdTe层的施加，其方法是加热具有预先准备的前接触层(该前接触层朝向坩埚的方向)的衬底，并且将衬底以恒定的速度在坩埚上面穿过，从而构造出均匀厚度的CdS层和CdTe层。该过程根据现有技术在依次连接的、被加热的真空室内实施，衬底在由辊子或者传输带组成的传输系统上运动穿过这些真空室，辊子或者传送带在衬底的侧棱边上支撑该衬底。
在该过程中力争把CdS层尽可能薄地设计，以防止太阳能电池的光学特性由于该层而变差。然而同时必须保证CdS层不具有任何缺陷(孔洞一针孔)，通过这些缺陷可能引起前接触层与CdTe层之间的短路。根据现有技术为满足这两种需求优选CdS层厚为80nm到200nm。
在制造CdS层时的缺点是，该层的生长进行得非常慢，这是因为CdS或者其由蒸气组成的组成部分仅能困难地保持附着在前接触层的表面上。其结果是，必须从坩埚中蒸发要比构造该层所需要的更多的CdS材料。除提高成本外这还导致CdS在不期望的地方上的增强的沉积。
发明内容
所述问题的结果导致提出如下任务：减小CdS层的层厚而不降低质量，并且尤其在CSS法中更好地充分利用CdS。还应该实现覆层过程的加速。
根据本发明，该任务通过根据权利要求1的方法解决。有利的方法方式在关联的从属权利要求中说明。根据本发明设计的薄层太阳能电池在权利要求4中公开。该太阳能电池的有利的实施方式是关联的从属权利要求的主题。
根据本发明的方法设置，将起增附作用的层施加到薄层太阳能电池的前接触层上，该起增附作用的层既提高CdS的沉积率，也改进沉积的CdS层的均匀性。
起增附作用的层的目的是，延长Cd原子和／或S原子(其从S2分子在产生)在前接触层的表面上的停留时间并且因此提高反应成CdS的概率。
作为增附剂优选使用用下述物质构成的薄层：碲化镉(CdTe)、碲(Te)、硒(Se)或者硒化镉(CdSe)或者这些元素或者物质的混合物。混合物在该意义上意味着，起增附作用的层至少10％由一种或者多种所述元素或者化合物构成。特别优选使用纯净状态下的CdTe，其也应用在光伏活性层中。
优选地，增附剂施加为薄层、特别优选施加为单层。因此层厚在开始施布CdS层时优选小于10nm，特别优选小于1nm，特别优选是单层(单原子的或者单分子的层)。过厚的起增附作用的层对于CdS层的光学特性起负面的作用。
研究表明，在该增附层上CdS层的晶核形成比迄今的方法更加均匀。因此可以减小CdS的层厚。能够有利地使层厚达到30nm到100nm的范围内，而不会使CdS层具有孔洞。另外有利的是因此能够提高太阳能电池的效率。
测量表明，通过使用起增附作用的层，CdS的沉积率相对于没有起增附作用的层的方法可提高到三倍。
起增附作用的层可以使用根据现有技术的方法来施加。在此优选是湿化学法或溅射。
特别优选使用一种起增附作用的层(优选是CdTe层)，该起增附作用的层优选也使用CSS法施布。在此优选使用根据现有技术的设备。在设备安排中为此仅设置一个第一坩埚，用前接触层覆层的衬底首先在其上穿过。在此构造出起增附作用的层。
研究表明，在CSS法中吸附和解吸附作用力争达到平衡。该平衡取决于衬底温度(确切说被蒸镀的层的温度)。因此通过调节衬底温度，力争达到的层厚作为自调节过程来达到。该力争达到的层厚在用CdS开始覆层时应该优选小于10nm并且特别优选地是单层。
将由纯的或者经改性的CdS组成的层施加到起增附作用的层上之后，可以用根据现有技术的方法继续处理如此得到的半成品，直到完成太阳能电池。因此例如能够根据公知的方法施加CdTe层和背接触层序列。在纯的或者经改性的CdS组成的层之上的变化和附加的层也是可能的，并且不由于使用根据本发明的起增附作用的层而受影响。
附图说明
图1示意性地示出根据本发明的太阳能电池的层结构。在玻璃衬底1上施加有前侧接触层21。此外存在薄的起增附作用的层5，其上然后布置有现有技术公知的层序列，其由CdS层3、CdTe层4以及背侧接触层22组成。
图2示意性地示出根据现有技术的太阳能电池的层结构。该太阳能电池在衬底1上具有由前侧接触层21、CdS层3、CdTe层4以及背侧接触层22组成的层序列。
具体实施方式
具有尺寸1600mm×1200mm×3.2mm的衬底1被覆层有由氧化铟锡(ITO)组成的、250nm厚的层21，其作为透明的前接触层21。
接着把带有朝下指向的前接触层21的衬底1放入一系列真空室内。衬底1在第一真空室内被加热到450℃。当衬底1搁放在传输设备上并由其运动穿过该第一真空室时，这种加热借助适宜的加热设备进行。衬底1到达随后的真空室并且继续由传输设备(运动速度为1.5m／min)以0.5cm的间隔在具有颗粒状的CdTe的坩埚上运动经过。坩埚超过衬底1的整个宽度(垂直于传输方向)并且沿传输方向延伸过17cm的长度。CdTe在坩埚中被加热到620℃并且升华。上升的气体在衬底1的前接触层21上沉积。当衬底1经过坩埚后，前接触层21具有完整的(除放置位置外)、均匀的、厚度为5nm的起增附作用的层5。在施加该起增附作用的层5后根据现有技术进行衬底1的继续处理。为此把衬底继续加热到500℃并且传输到随后的加工室内。因此现在同样用CSS法来施加CdS层3。由于起增附作用的层5，这可以用比迄今更少的具有CdS的坩埚来进行。因此衬底1仅还要在一个具有CdS的坩埚(温度：640℃)上穿过。达到的CdS的层厚为60nm。接着在CSS法中施加厚度为5000nm的CdTe层4。其后使用根据现有技术的方法进行一层或多层背接触层22的施加。在此，背接触层由适配层和实际的接触层组成的层序列构成。在此，由Te(50nm)组成的适配层通过CdTe层的NP腐蚀来构造，随后将Mo层(250nm)作为实际的接触层沉积到该适配层上。
最后根据现有技术进行其它处理步骤。
附图标记
1 衬底(玻璃)
21 前接触层(透明的，TCO)
22 背接触层(金属)
3 CdS层
4 CdTe层
5 CdTe增附层
Claims (7)
1.一种用于制造薄层太阳能电池的半成品的方法，其特征在于下述步骤：
a.提供具有前接触层或者前接触层序列的透明的衬底，
b.将增附层施加到所述前接触层或者前接触层序列上，
c.将由纯的或者经改性的CdS组成的层施加到所述增附层上。
2.根据权利要求1所述的方法，其特征在于，用CSS法施加所述由纯的或者经改性的CdS组成的层。
3.根据权利要求2所述的方法，其特征在于，所述步骤b.和c.在一系列带有共同的传输系统的真空室内实施。
4.薄层太阳能电池，其至少具有下述层：
a.透明的衬底，
b.前接触层或者前接触层序列，
c.由纯的或者经改性的CdS组成的层，
d.CdTe层，
e.背接触层或者背接触层序列，
其特征在于，在前接触层或者前接触层序列与所述由纯的或者经改性的CdS组成的层之间布置有起增附作用的层。
5.根据权利要求4所述的薄层太阳能电池，其特征在于，所述起增附作用的层具有碲、碲化镉、硒、硒化镉或者它们的混合物。
6.根据权利要求4或权利要求5所述的薄层太阳能电池，其特征在于，所述起增附作用的层具有小于10nm的厚度。
7.根据权利要求4或权利要求5所述的薄层太阳能电池，其特征在于，所述起增附作用的层是单层。
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| CN201310537497.6A CN104425653B (zh) | 2013-08-30 | 2013-08-30 | 用于薄层太阳能电池的附加的底层 |
| US14/915,126 US20160240716A1 (en) | 2013-08-30 | 2014-08-27 | Additional foundation layer for thin layer solar cells |
| PCT/EP2014/068194 WO2015028521A1 (de) | 2013-08-30 | 2014-08-27 | Zusätzliche grundierungsschicht für dünnschichtsolarzellen |
| EP14755826.6A EP3039721B1 (de) | 2013-08-30 | 2014-08-27 | Haftvermittlerschicht für dünnschichtsolarzellen |
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| Publication number | Publication date |
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| WO2015028521A1 (de) | 2015-03-05 |
| US20160240716A1 (en) | 2016-08-18 |
| CN104425653B (zh) | 2017-11-21 |
| EP3039721A1 (de) | 2016-07-06 |
| EP3039721B1 (de) | 2019-07-24 |
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