CN104425213B - A kind of chemical method that barium strontium titanate dielectric film is prepared on GaAs substrate - Google Patents
A kind of chemical method that barium strontium titanate dielectric film is prepared on GaAs substrate Download PDFInfo
- Publication number
- CN104425213B CN104425213B CN201310377507.4A CN201310377507A CN104425213B CN 104425213 B CN104425213 B CN 104425213B CN 201310377507 A CN201310377507 A CN 201310377507A CN 104425213 B CN104425213 B CN 104425213B
- Authority
- CN
- China
- Prior art keywords
- gaas substrate
- strontium titanate
- barium strontium
- gaas
- dielectric film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 129
- 239000000758 substrate Substances 0.000 title claims abstract description 110
- 229910052454 barium strontium titanate Inorganic materials 0.000 title claims abstract description 100
- 238000000034 method Methods 0.000 title claims abstract description 40
- 239000000126 substance Substances 0.000 title claims abstract description 26
- 238000000576 coating method Methods 0.000 claims abstract description 24
- 239000011248 coating agent Substances 0.000 claims abstract description 21
- 238000000137 annealing Methods 0.000 claims abstract description 18
- 230000001681 protective effect Effects 0.000 claims abstract description 13
- 239000003708 ampul Substances 0.000 claims abstract description 7
- 239000010453 quartz Substances 0.000 claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000000243 solution Substances 0.000 claims description 29
- 239000007789 gas Substances 0.000 claims description 26
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 20
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- 238000001020 plasma etching Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 13
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 12
- 238000001035 drying Methods 0.000 claims description 12
- 229910052786 argon Inorganic materials 0.000 claims description 10
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 9
- 238000002360 preparation method Methods 0.000 claims description 8
- 238000010792 warming Methods 0.000 claims description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 7
- 238000000992 sputter etching Methods 0.000 claims description 7
- 229960000583 acetic acid Drugs 0.000 claims description 6
- ITHZDDVSAWDQPZ-UHFFFAOYSA-L barium acetate Chemical compound [Ba+2].CC([O-])=O.CC([O-])=O ITHZDDVSAWDQPZ-UHFFFAOYSA-L 0.000 claims description 6
- FPCJKVGGYOAWIZ-UHFFFAOYSA-N butan-1-ol;titanium Chemical compound [Ti].CCCCO.CCCCO.CCCCO.CCCCO FPCJKVGGYOAWIZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000012362 glacial acetic acid Substances 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 6
- RXSHXLOMRZJCLB-UHFFFAOYSA-L strontium;diacetate Chemical compound [Sr+2].CC([O-])=O.CC([O-])=O RXSHXLOMRZJCLB-UHFFFAOYSA-L 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 239000011259 mixed solution Substances 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 3
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 claims description 3
- 230000001476 alcoholic effect Effects 0.000 claims description 3
- 230000000977 initiatory effect Effects 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 230000010355 oscillation Effects 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- 238000003756 stirring Methods 0.000 claims description 3
- 229960002415 trichloroethylene Drugs 0.000 claims description 3
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 claims description 3
- 238000001291 vacuum drying Methods 0.000 claims description 3
- 238000007711 solidification Methods 0.000 claims description 2
- 230000008023 solidification Effects 0.000 claims description 2
- 150000002576 ketones Chemical class 0.000 claims 1
- 239000012298 atmosphere Substances 0.000 abstract description 7
- 238000004381 surface treatment Methods 0.000 abstract description 5
- 238000011282 treatment Methods 0.000 abstract description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 104
- 238000001228 spectrum Methods 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- WOIHABYNKOEWFG-UHFFFAOYSA-N [Sr].[Ba] Chemical compound [Sr].[Ba] WOIHABYNKOEWFG-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 229910052712 strontium Inorganic materials 0.000 description 3
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000037230 mobility Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- -1 Acyl acetone Chemical compound 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000006701 autoxidation reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006388 chemical passivation reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 238000010406 interfacial reaction Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 229910052704 radon Inorganic materials 0.000 description 1
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910001868 water Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Abstract
The invention discloses a kind of chemical method that barium strontium titanate dielectric film is prepared on GaAs substrate, comprise the following steps:S1:Surface treatment is done to GaAs substrates and forms clean surface of the arsenic atom of atomically flating for termination face;S2:Prepare barium strontium titanate colloidal sol;S3:Above-mentioned steps S2 is prepared to obtained barium strontium titanate sol solution to be added dropwise on the GaAs substrate that above-mentioned steps S1 is obtained, whirl coating is carried out;S4:Dry;S5:Baking pretreatment;S6:The pretreated GaAs substrate of above-mentioned steps S5 bakings is placed in quartz ampoule and is passed through in a certain proportion of protective atmosphere, is made annealing treatment under specified temp, barium strontium titanate dielectric film is made.The barium strontium titanate dielectric film crystalline quality prepared using the chemical method of the present invention is good, surfacing and dielectric properties keep stable with frequency, in the range of 100KHz 1MHz, dielectric constant is higher than 250, and the making requirement of MOSFET device can be met in structure.
Description
Technical field
The present invention relates to ferroelectric properties field of material technology, prepared more specifically to one kind on GaAs substrate
The chemical method of barium strontium titanate dielectric film.
Background technology
GaAs(GaAs)With characteristics such as electron mobility height, broad-band gap and high strike electric fields, it has also become prepare at a high speed, greatly
The important materials of power solid device.In recent years, people wish ferroelectricity functional oxide dielectric film material, such as metatitanic acid always
Strontium barium (BST)The mos field effect transistor (MOSFET) to form GaAs bases is integrated with GaAs materials.
Polarized using ferroelectric material, the characteristic such as electric light, piezoelectricity, dielectric tunable characteristic and GaAs high mobilities, direct band gap, exploitation provides
There are electric light coupling, the multi-functional, integrated of waveguide properties, high frequency semiconductor devices.
At present, the SiO commonly used relative to semi-conductor industry2For/Si is as substrate, GaAs semiconductors are binary chemical combination
Thing, its surface and interface has higher activity, and GaAs is unable to autoxidation and forms natural chemical passivation layer, therefore in GaAs bases
Grown on piece during ferroelectric oxide dielectric film, very high interface state density can be caused by interfacial reaction or diffusion, these
Electric charge is directly injected into semiconductor during highdensity interfacial state can make fermi level pinning in band gap center or cause ferroelectric material
Big leakage current is caused, the development of GaAs related device technologies is hindered.Meanwhile, these interfacial states greatly enhance surface recombination center
Non-radiative recombination speed, destroy GaAs proper semiconductor's characteristic, the operation of serious limitation GaAs devices.
As can be seen here, the problem of interface growth is incompatible between ferroelectric material barium strontium titanate and binary compound GaAs, leads
Cause can not grow high-quality functional oxide barium strontium titanate dielectric film, the hair of restriction semiconductor devices industry on GaAs
Exhibition.
The content of the invention
The technical problem to be solved in the present invention is, for the above-mentioned ferroelectric material barium strontium titanate and dualization of prior art
Presence of an interface growth is incompatible between compound GaAs, causes that high-quality functional oxide metatitanic acid can not be grown on gallium
There is provided a kind of chemical method that barium strontium titanate dielectric film is prepared on GaAs substrate for the defect of strontium barium dielectric film.
The technical solution adopted for the present invention to solve the technical problems is:Construction one kind prepares metatitanic acid on GaAs substrate
The chemical method of strontium barium dielectric film, comprises the following steps:
S1, GaAs substrate pretreatment:First successively with trichloro ethylene solution, acetone soln and alcoholic solution to arsenic
Gallium substrate carries out sonic oscillation cleaning, then GaAs substrate is cleaned with deionized water and hydrofluoric acid solution to remove successively
The oxide layer of GaAs substrate surface is gone, GaAs substrate is finally dried up;
S2, barium strontium titanate colloidal sol preparation:Using barium acetate, strontium acetate and butyl titanate as initiation material, glacial acetic acid and second
Acyl acetone is that solvent prepares barium strontium titanate colloidal sol;
S3, whirl coating film forming:It will be placed on by the above-mentioned steps S1 GaAs substrates handled on sol evenning machine, then will pass through upper
State step S2 and prepare obtained barium strontium titanate sol solution dropwise addition on the GaAs substrate, carry out whirl coating;, will after whirl coating terminates
The GaAs substrate is placed in culture dish, is wiped the barium strontium titanate colloidal sol for being thrown out of substrate with alcohol swab, is placed to making arsenic
Change the barium strontium titanate colloidal sol solidification on gallium substrate;
S4, drying:GaAs substrate after above-mentioned steps S3 whirl coatings is placed in vacuum drying chamber and is dried;
S5, baking pretreatment:The dried GaAs substrates of above-mentioned steps S4 are placed in Muffle furnace and carry out toasting pre- place
Reason, then naturally cools to room temperature by the GaAs substrate.
S6, annealing:Pretreated GaAs substrate will be toasted to be positioned in quartz ampoule, the constant temperature of tube furnace is pushed to
Area, anneals 150~180 minutes, whole process is passed through the protective gas containing inert gas and oxygen, described at 450~650 DEG C
The flow velocity of protective gas is 600 ml/mins, and after tubular type furnace temperature is down to room temperature, sample is taken out, is positioned in drying box
Preserve.
It is described to contain inertia in the chemical method of the present invention that barium strontium titanate dielectric film is prepared on GaAs substrate
In the protective gas of gas and oxygen, the volume ratio of the inert gas and oxygen is 90:10~98:2.
In the chemical method of the present invention that barium strontium titanate dielectric film is prepared on GaAs substrate, the step S1
Also include:In the vacuum cavity that the GaAs substrate of drying is sent into RIE reactive ion etching machines, in nitrogen and argon gas
Product is than being 4:Ion etching is carried out in 1 mixed gas.
In the chemical method of the present invention that barium strontium titanate dielectric film is prepared on GaAs substrate, the GaAs
Substrate carries out ion etching 10 minutes under the conditions of the sputtering power of the RIE reactive ion etching machines is 50 milliwatts.
In the chemical method of the present invention that barium strontium titanate dielectric film is prepared on GaAs substrate, the step S2
Barium strontium titanate colloidal sol preparation, prepare according to the following steps:
S21, according to 8:2 mol ratios weigh a certain amount of barium acetate and strontium acetate, add glacial acetic acid and heat and be sufficiently stirred for
Dissolve it;
S22, measure equimolar and mixed than butyl titanate and acetylacetone,2,4-pentanedione;
S23, solution made from above-mentioned steps S21 mixed with solution made from step S22 in 50 DEG C~70 DEG C stirrings, plus
It is 2 to enter mass ratio:1 ethylene glycol monomethyl ether and ethylene glycol solution dilutes above-mentioned mixed solution, finally gives 0.01mol/L
Barium strontium titanate sol solution.
In the chemical method of the present invention that barium strontium titanate dielectric film is prepared on GaAs substrate, the step S3
Described in GaAs substrate rotating speed be 2500~3500r/ minutes under the conditions of whirl coating 30s.
In the chemical method of the present invention that barium strontium titanate dielectric film is prepared on GaAs substrate, the step S5
It is middle that Muffle furnace is warming up to 300~380 DEG C, the GaAs substrate is incubated 15~30 minutes under the temperature conditionss.
Implement the chemical method that barium strontium titanate dielectric film is prepared on GaAs substrate of the present invention, with following beneficial
Effect:Surface treatment is done by GaAs substrate and forms clean surface of the arsenic atom of atomically flating for termination face, and is passed through
Whirl coating film forming, drying, bake, the pretreated GaAs substrate of baking is placed in quartz ampoule and is passed through a certain proportion of protection gas
In atmosphere, made annealing treatment under specified temp, make to grow high-quality barium strontium titanate dielectric film on GaAs substrate, solve titanium
The problem of Presence of an interface growth is incompatible between sour strontium barium and GaAs.The barium strontium titanate prepared using the inventive method is situated between
Conductive film crystalline quality is good, and surfacing and dielectric properties keep stable with frequency, in the range of 100KHz-1MHz, dielectric
Constant is higher than 250, and the making requirement of MOSFET device can be met in structure.In addition, with
Sol-gal process prepares barium strontium titanate dielectric film, and making apparatus is simple, and cost of material is relatively low, it is not necessary to expensive vacuum equipment
Such as sputtering, molecular beam epitaxy, and it is adapted to large area film forming, be conducive to business application.
Brief description of the drawings
Below in conjunction with drawings and Examples, the invention will be further described, in accompanying drawing:
Fig. 1 is a kind of flow chart for the chemical method that barium strontium titanate dielectric film is prepared on GaAs substrate of the present invention;
Fig. 2 is the barium strontium titanate that the present invention is grown into by step S6 present invention process(BST)Dielectric film is moved back with other
The X-ray diffraction comparison diagram of BST dielectric films prepared by fiery condition;
Fig. 3 is the BST dielectric film surface regional area AFM surface topography maps that the present invention is grown into by step S6;
Fig. 4 is dielectric constant-frequency survey that the present invention grows into BST dielectric films/GaAs substrate samples by step S6
Measure curve.
Embodiment
In order to which technical characteristic, purpose and effect to the present invention are more clearly understood from, now compare accompanying drawing and describe in detail
The embodiment of the present invention.
As shown in figure 1, preparing barium strontium titanate on GaAs substrate for one kind that the present invention is provided(BST)Dielectric film
The flow chart of chemical method, is mainly included the following steps that:S1:Pretreatment → S2 of GaAs substrate:Barium strontium titanate colloidal sol is matched somebody with somebody
System → S3:Whirl coating film forming → S4:Drying → S5:Toast pretreatment → S6:Annealing.It will be illustrated below with specific embodiment.
Embodiment one:The specific steps of the above-mentioned chemical method that barium strontium titanate dielectric film is prepared on GaAs substrate are such as
Under:
S1, GaAs(GaAs)The pretreatment of substrate:
GaAs substrates are surface-treated, first successively with trichloro ethylene solution, acetone soln and alcoholic solution to GaAs
Substrate carries out sonic oscillation cleaning, every time cleaning 5 minutes;Then GaAs substrates are cleaned 5 minutes with deionized water, then uses hydrogen fluorine
Acid(HF)Solution(HF:H2O=l:50)GaAs substrates are cleaned 1 minute, the oxide layer of GaAs substrate surfaces is removed, uses nitrogen(N2)
Dry up GaAs substrates;Then the GaAs substrates of drying are sent into the vacuum cavity of RIE reactive ion etching machines, in nitrogen and argon
Air volume ratio is 4:Ion etching 10 minutes is carried out in 1 mixed gas, the RIE reactive ion etching machines sputtering power is 50 millis
Watt, etched substrate surface is more cleaned, closer to atomically flating, so as to obtain the interface of high-quality in growth course;
Wherein, the material of GaAs substrates is 2 inches of Si doped p-type(Concentration is 1 × 1018cm-3)GaAs(100)For lining
Bottom, the Europe of sheet resistance about 6.
S2, barium strontium titanate colloidal sol preparation:Barium acetate, strontium acetate and butyl titanate are used for initiation material, glacial acetic acid and
Acetylacetone,2,4-pentanedione is that solvent prepares barium strontium titanate colloidal sol, is prepared according to the following steps:
S21, according to 8:2 mol ratios weigh a certain amount of barium acetate(2.0436 gram)And strontium acetate(0.4294 gram), add
Glacial acetic acid is stirred 120 minutes at 120 DEG C dissolves it;
S22, equimolar is measured again compare butyl titanate(3.5 milliliter)And acetylacetone,2,4-pentanedione(1 milliliter)60 points are stirred at 60 DEG C
Clock is sufficiently mixed;
S23, solution made from above-mentioned steps S21 mixed with solution made from step S22 in 50~70 DEG C of stirrings, obtained
The mixed solution of yellow transparent;In order to promote the hydrolytic polymerization of above-mentioned mixed solution, a small amount of deionized water is added(Content does not surpass
Cross 5%), and the PVDF miillpore filters for being 200nm with aperture are filtered, to remove molecule and dust in the solution, finally
It is 2 to add mass ratio:1 ethylene glycol monomethyl ether(4 grams)And ethylene glycol(2 grams)Solution is diluted, and finally gives 0.01mol/L's
Barium strontium titanate sol solution, and barium strontium titanate sol solution is placed on progress low temperature maturation 48 hours at 5~10 DEG C;
S3, whirl coating film forming:
GaAs substrate after being surface-treated through above-mentioned steps S1 is put on sol evenning machine, then above-mentioned steps S2 is prepared
Obtained barium strontium titanate sol solution is added dropwise on the GaAs substrate after above-mentioned steps S1 surface treatments, starts sol evenning machine
GaAs substrate is driven to rotate, under 3000 revs/min of rotating speed, whirl coating 30 seconds;After whirl coating terminates, culture dish is placed the substrate in
In, the barium strontium titanate colloidal sol being thrown out of is wiped with alcohol swab, places 15 minutes, makes the barium strontium titanate on GaAs substrate molten
The abundant gel of glue.
S4, drying:
GaAs substrate after above-mentioned steps S3 whirl coatings is placed in vacuum drying chamber, 20 points are first dried at a temperature of 80 DEG C
Clock;Vavuum pump is then turned on, under vacuum, temperature is 150 DEG C, dries 20 minutes, finally naturally cools to room temperature.
S5, baking pretreatment:
GaAs substrate made from above-mentioned steps S4 is placed in Muffle furnace, 380 DEG C are warming up to, 30 minutes are incubated, it is natural
It is cooled to room temperature;
S6, GaAs substrate is positioned in quartz ampoule, is placed on the flat-temperature zone of tube furnace, heating process parameter is set, it is whole
Individual process is passed through the protective gas containing argon gas and oxygen, argon gas:Oxygen volume ratio is 94:6, the flow velocity of protective gas is 600 millis
Liter/min;550~600 DEG C of annealing temperature.
Wherein heating process parameter is specially:
A.60 minute rises to 500 DEG C from room temperature;
B. 90 minutes are incubated under the conditions of 500 DEG C;
C. pass through 15 minutes, 600 DEG C are warming up to from 550 DEG C, then be incubated 30 minutes;
D. it is naturally cooling near room temperature.
The micro-structural and Electrical Analysis of BST/GaAs dielectric films obtained as above use following instrument:
RIE reactive ion etching machines, the FA2000Reactive Ion Etching of MRICO companies production;
X-ray diffraction, the production of Rigaku company;
AFM, the SPA300HV of Japanese SEIKO companies production;
Electric impedance analyzer, the HP4284 of Hewlett-Packard Corporation of U.S. production.
Below by structure and the performance test design sketch of the sample shown in Fig. 2 to Fig. 4 carry out the further present invention can be real
The property applied and effect.
Fig. 2 is the BST dielectric films of the annealing process growth by step S6 of the present invention, with being prepared under other annealing conditions
BST dielectric film X-ray diffraction comparison diagrams;Wherein,
(a)For the GaAs substrate XRD spectrums of unannealed non-deposited dielectric films,
(b)For in pure oxygen atmosphere 600 DEG C annealing BST/GaAs sample XRD spectrums,
(c)For in pure argon atmosphere 600 DEG C annealing BST/GaAs sample XRD spectrums,
(d)For argon gas:Oxygen=94:The BST/GaAs sample XRD spectrums of 550 DEG C of annealings in 6 atmosphere;
(a)For the GaAs substrate XRD spectrums of unannealed non-deposited dielectric films, clearly GaAs seen from the figure(200)'s
XRD characteristic peaks;(b)For the BST/GaAs sample XRD spectrums of 600 DEG C of annealings in pure oxygen atmosphere, as seen from the figure BST dielectrics
The XRD characteristic peaks of film(Marked in figure with *), illustrate that dielectric film has been crystallized, with figure(a)On GaAs(200)XRD features
Peak is compared, figure(b)Middle GaAs substrates XRD feature peak stretchings, illustrate that GaAs substrates are destroyed, surface is by severe oxidation;(c)Figure
For the BST/GaAs sample XRD spectrums for 600 DEG C of annealings in pure argon atmosphere, clearly GaAs seen from the figure(200)XRD
The characteristic peak of BST dielectric films is had no in characteristic peak, but figure, this explanation anneals BST dielectric films for amorphous under this atmosphere,
The purpose of Annealing Crystallization is not reached;(d)For argon gas:Oxygen=94:The BST/GaAs samples XRD of 550 DEG C of annealings in 6 atmosphere
, as seen from the figure, only there is the diffraction of BST dielectric films in the BST/GaAs diffraction spectra that 550 DEG C are annealed in argon atmospher in collection of illustrative plates
Peak:BST(100)、BST(110)、BST(111)、BST(200), Er Qieyan(110)Direction(High preferred orientation)Diffraction it is most strong,
Illustrate on GaAs substrates, BST dielectric films edge(011)Direction(Crystallographic axis is orientated)Preferred orientation grows.Sum it up, by this
BST dielectric films prepared by invention preparation method have good crystallization property.
Fig. 3 is the BST dielectric film surface regional area AFM surface topography maps that the present invention is grown into by step S6.By
Scheme visible dielectric film surface even compact, surface roughness is 12nm.Even compact illustrates dielectric film stable electrical properties,
It is difficult electric leakage or breakdown.Roughness reflects the flatness of dielectric film, and the smaller explanation dielectric film of roughness is more smooth, the sample
The roughness of product dielectric film is only 12nm, illustrates surfacing, has reached and has prepared micro-nano electronic device to surface smoothness
It is required that.
Fig. 4 is dielectric constant-frequency that the present invention grows into BST dielectric films/GaAs substrate structures by step S6(C-
f)Experiment curv.Abscissa Frequence represents that test b ST dielectric films are used test frequency, ordinate in figure
Dieletric constant represent the dielectric constant that BST dielectric films are obtained under test frequency.BST dielectrics are thin as seen from the figure
Film dielectric constant in 100KHz to 10MHz frequency spectrums is stable, and about 340, reach and manufacture metal oxide semiconductor field-effect crystalline substance
Body pipe(MOSFET)The requirement of device.
As shown in above-mentioned Fig. 1 to Fig. 3, it may be said that the bright method by the present invention prepares orientation life on GaAs substrate
The feasibility of long barium strontium titanate dielectric film, the crystalline quality of gained strontium titanates dielectric film is good, surfacing and dielectric
Performance keeps stable with frequency, in the range of 100KHz-1MHz, and dielectric constant is higher than 250.
Embodiment two:The step of barium strontium titanate dielectric dielectric film is prepared on GaAs substrate is as follows:
The pretreatment of S1, GaAs substrate:Step S1 in be the same as Example one;
S2, barium strontium titanate colloidal sol preparation:Step S2 in be the same as Example one;
S3, whirl coating film forming:
GaAs substrate after being surface-treated through above-mentioned steps S1 is put on sol evenning machine, then above-mentioned steps S2 is prepared
Obtained barium strontium titanate sol solution is added dropwise on the GaAs substrate after above-mentioned steps S1 surface treatments, starts sol evenning machine
GaAs substrate is driven to rotate, under 2500 revs/min of rotating speed, whirl coating 30 seconds;After whirl coating terminates, culture dish is placed the substrate in
In, the barium strontium titanate colloidal sol being thrown out of is wiped with alcohol swab, places 15 minutes, makes the barium strontium titanate on GaAs substrate molten
The abundant gel of glue.
S4, drying:Step S4 in be the same as Example one;
S5, baking pretreatment:
GaAs substrate made from above-mentioned steps S4 is placed in Muffle furnace, 350 DEG C are warming up to, 30 minutes are incubated, it is natural
It is cooled to room temperature;
S6, GaAs substrate is positioned in quartz ampoule, is placed on the flat-temperature zone of tube furnace, heating process parameter is set, it is whole
Individual process is passed through the protective gas containing argon gas and oxygen, Krypton:Oxygen volume ratio is 90:10, the flow velocity of protective gas is 600 millis
Liter/min;450~580 DEG C of annealing temperature;Wherein heating process parameter is specially:
A.60 minute rises to 450 DEG C from room temperature;
B. 90 minutes are incubated under the conditions of 500 DEG C;
C. pass through 15 minutes, 580 DEG C are warming up to from 550 DEG C, then be incubated 30 minutes;
D. it is naturally cooling near room temperature.
The BST dielectric films prepared by present invention process processing procedure have good crystallization property, dielectric film table
Face is smooth, even compact, and dielectric constant is stable in 100KHz to 10MHz frequency spectrums, and dielectric constant is higher than 250, reaches and manufactures gold
Belong to oxide semiconductor field effect transistor(MOSFET)The requirement of device.The method by the present invention can be illustrated in GaAs
The feasibility of the barium strontium titanate dielectric film of oriented growth, the microstructure and property of gained strontium titanates dielectric film are prepared on substrate
Expected Results can have been reached.
Embodiment three:The step of barium strontium titanate dielectric film is prepared on GaAs substrate is as follows:
The pretreatment of S1, GaAs substrate:Step S1 in be the same as Example one;
S2, barium strontium titanate colloidal sol preparation:Step S2 in be the same as Example one;
S3, whirl coating film forming:
GaAs substrate after being surface-treated through above-mentioned steps S1 is put on sol evenning machine, then above-mentioned steps S2 is prepared
Obtained barium strontium titanate sol solution is added dropwise on the GaAs substrate after above-mentioned steps S1 surface treatments, starts sol evenning machine
GaAs substrate is driven to rotate, under 3500 revs/min of rotating speed, whirl coating 30 seconds;After whirl coating terminates, culture dish is placed the substrate in
In, the barium strontium titanate colloidal sol being thrown out of is wiped with alcohol swab, places 15 minutes, makes the barium strontium titanate on GaAs substrate molten
The abundant gel of glue.
S4, drying:Step S4 in be the same as Example one;
S5, baking pretreatment:
GaAs substrate made from above-mentioned steps S4 is placed in Muffle furnace, 300 DEG C are warming up to, 15 minutes are incubated, it is natural
It is cooled to room temperature;
S6, GaAs substrate is positioned in quartz ampoule, is placed on the flat-temperature zone of tube furnace, heating process parameter is set, it is whole
Individual process is passed through the protective gas containing argon gas and oxygen, radon gas:Oxygen volume ratio is 98:2, the flow velocity of protective gas is 600 millis
Liter/min;500~650 DEG C of annealing temperature;Wherein heating process parameter is specially:
A.60 minute rises to 500 DEG C from room temperature;
B. 90 minutes are incubated under the conditions of 500 DEG C;
C. pass through 15 minutes, 650 DEG C are warming up to from 500 DEG C, then be incubated 30 minutes;
D. it is naturally cooling near room temperature.
The BST dielectric films prepared by present invention process processing procedure have good crystallization property, dielectric film table
Face is smooth, even compact, and dielectric constant is stable in 100KHz to 10MHz frequency spectrums, and dielectric constant is higher than 250, reaches and manufactures gold
Belong to oxide semiconductor field effect transistor(MOSFET)The requirement of device.The method by the present invention can be illustrated in GaAs
The feasibility of the barium strontium titanate dielectric film of oriented growth, the microstructure and property of gained strontium titanates dielectric film are prepared on substrate
Expected Results can have been reached.
Embodiments of the invention are described above in conjunction with accompanying drawing, but the invention is not limited in above-mentioned specific
Embodiment, above-mentioned embodiment is only schematical, rather than restricted, one of ordinary skill in the art
Under the enlightenment of the present invention, in the case of present inventive concept and scope of the claimed protection is not departed from, it can also make a lot
Form, these are belonged within the protection of the present invention.
Claims (7)
1. a kind of chemical method that barium strontium titanate dielectric film is prepared on GaAs substrate, it is characterised in that including following step
Suddenly:
S1, GaAs substrate pretreatment:First successively with trichloro ethylene solution, acetone soln and alcoholic solution to GaAs base
Piece carries out sonic oscillation cleaning, then GaAs substrate is cleaned with deionized water and hydrofluoric acid solution to remove arsenic successively
Change the oxide layer of gallium substrate surface, finally dry up GaAs substrate;
S2, barium strontium titanate colloidal sol preparation:Using barium acetate, strontium acetate and butyl titanate as initiation material, glacial acetic acid and levulinic
Ketone is that solvent prepares barium strontium titanate colloidal sol;
S3, whirl coating film forming:It will be placed on by the above-mentioned steps S1 GaAs substrates handled on sol evenning machine, then will pass through above-mentioned step
Rapid S2 prepares obtained barium strontium titanate sol solution and is added dropwise on the GaAs substrate, carries out whirl coating;After whirl coating terminates, by the arsenic
Change gallium substrate to be placed in culture dish, wiped the barium strontium titanate colloidal sol for being thrown out of substrate with alcohol swab, place to GaAs base
Barium strontium titanate colloidal sol solidification on piece;
S4, drying:GaAs substrate after above-mentioned steps S3 whirl coatings is placed in vacuum drying chamber and is dried;
S5, baking pretreatment:The dried GaAs substrates of above-mentioned steps S4 are placed in progress baking pretreatment in Muffle furnace, so
The GaAs substrate is naturally cooled into room temperature afterwards;
S6, annealing:Above-mentioned steps S5 is toasted into pretreated GaAs substrate to be positioned in quartz ampoule, tube furnace is pushed to
Flat-temperature zone, anneals 150~180 minutes at 450~650 DEG C, and be continually fed into whole annealing process containing inert gas with
The protective gas of oxygen, and flow velocity of the protective gas containing inert gas and oxygen when being passed through is 600 ml/mins, is treated
The flat-temperature zone temperature of tube furnace is down to after room temperature, and sample is taken out, and is positioned in drying box and is preserved.
2. the chemical method according to claim 1 that barium strontium titanate dielectric film is prepared on GaAs substrate, its feature
It is, in the protective gas containing inert gas and oxygen, the volume ratio of the inert gas and oxygen is 90:10~98:
2。
3. the chemical method according to claim 1 that barium strontium titanate dielectric film is prepared on GaAs substrate, its feature
It is, the step S1 also includes:The GaAs substrate of drying is sent into the vacuum cavity of RIE reactive ion etching machines
It is interior, it is 4 in nitrogen and argon gas volume ratio:Ion etching is carried out in 1 mixed gas.
4. the chemical method according to claim 3 that barium strontium titanate dielectric film is prepared on GaAs substrate, its feature
It is, the GaAs substrate carries out sputtering work(during ion etching in the vacuum cavity of the RIE reactive ion etching machines
Rate is 50 milliwatts, and the duration for carrying out ion etching is 10 minutes.
5. the chemical method according to claim 1 that barium strontium titanate dielectric film is prepared on GaAs substrate, its feature
It is that the preparation of the barium strontium titanate colloidal sol of the step S2 is prepared according to the following steps:
S21, according to 8:2 mol ratios weigh a certain amount of barium acetate and strontium acetate, add glacial acetic acid and heat and be sufficiently stirred for making it
Dissolving;
S22, measure equimolar and mixed than butyl titanate and acetylacetone,2,4-pentanedione;
S23, solution made from above-mentioned steps S21 mixed with solution made from step S22 in 50 DEG C~70 DEG C stirrings, add matter
Amount is than being 2:1 ethylene glycol monomethyl ether and ethylene glycol solution dilutes above-mentioned mixed solution, finally gives 0.01 mol/L
Barium strontium titanate sol solution.
6. the chemical method according to claim 1 that barium strontium titanate dielectric film is prepared on GaAs substrate, its feature
It is, in the step S3, the rotating speed when GaAs substrate carries out whirl coating is 2500~3500 revolutions per seconds, the whirl coating time is
30 seconds.
7. the chemical method according to claim 1 that barium strontium titanate dielectric film is prepared on GaAs substrate, its feature
It is, Muffle furnace is warming up to 300 DEG C~380 DEG C in the step S5, and be incubated 15~30 minutes.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310377507.4A CN104425213B (en) | 2013-08-26 | 2013-08-26 | A kind of chemical method that barium strontium titanate dielectric film is prepared on GaAs substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310377507.4A CN104425213B (en) | 2013-08-26 | 2013-08-26 | A kind of chemical method that barium strontium titanate dielectric film is prepared on GaAs substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104425213A CN104425213A (en) | 2015-03-18 |
CN104425213B true CN104425213B (en) | 2017-09-26 |
Family
ID=52973904
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310377507.4A Active CN104425213B (en) | 2013-08-26 | 2013-08-26 | A kind of chemical method that barium strontium titanate dielectric film is prepared on GaAs substrate |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN104425213B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114531872B (en) * | 2020-12-30 | 2023-06-02 | 深圳清华大学研究院 | Atomic-level rough surface preparation process based on reverse order process |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6327135B1 (en) * | 1992-12-18 | 2001-12-04 | Symetrix Corp | Thin film capacitors on gallium arsenide substrate |
US5792592A (en) * | 1996-05-24 | 1998-08-11 | Symetrix Corporation | Photosensitive liquid precursor solutions and use thereof in making thin films |
US5942376A (en) * | 1997-08-14 | 1999-08-24 | Symetrix Corporation | Shelf-stable liquid metal arylketone alcoholate solutions and use thereof in photoinitiated patterning of thin films |
CN100401109C (en) * | 2005-03-18 | 2008-07-09 | 中国科学院上海技术物理研究所 | Strontium-barium titanate reflective membrane and process for preparing same |
CN101717067A (en) * | 2009-11-28 | 2010-06-02 | 桂林电子科技大学 | Barium strontium titanate-porous silicon composite material and preparation method thereof |
US8008208B2 (en) * | 2009-12-07 | 2011-08-30 | Applied Materials, Inc. | Method of cleaning and forming a negatively charged passivation layer over a doped region |
CN102181833A (en) * | 2011-06-10 | 2011-09-14 | 电子科技大学 | Method for epitaxially growing strontium titanate (STO) thin film on gallium arsenide (GaAs) substrate |
-
2013
- 2013-08-26 CN CN201310377507.4A patent/CN104425213B/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN104425213A (en) | 2015-03-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104609856B (en) | The highly preparation method of preferred orientation bismuth titanate sodium titanate-barium lead-free piezoelectric thin film | |
CN102787309B (en) | A kind of aluminum oxide film and preparation method and application thereof | |
CN106803601B (en) | preparation method of solid electrolyte lithium lanthanum titanium oxide film | |
CN103708828A (en) | Preparation method of bismuth sodium titanate-barium titanate lead-free composite piezoelectric thick film | |
CN108493102A (en) | Method and the application of hafnium oxide based ferroelectric film are prepared using full-inorganic precursor solution | |
CN111933519B (en) | Preparation method of non-layered two-dimensional gallium oxide film | |
CN103833416B (en) | A kind of chemical solution deposition preparation method of the sour lanthanum conductive film of nickel | |
CN100590101C (en) | Hafnium oxide doping cerium oxide grid dielectric material and preparation method thereof | |
CN104425213B (en) | A kind of chemical method that barium strontium titanate dielectric film is prepared on GaAs substrate | |
CN101211764A (en) | Chromium doped titanium dioxide ferromagnetic film room temperature preparation method | |
CN113121221B (en) | Preparation method of high-dielectric-property calcium copper titanate epitaxial film | |
CN105568265B (en) | Highly doped BaTiO3:Many ferroelectric material films of Fe and preparation method thereof | |
CN108588693A (en) | Method and the application of doped yttrium hafnium oxide ferroelectric thin film are prepared using full-inorganic precursor solution | |
CN101817559B (en) | Method for preparing potassium-sodiumniobate lead-free piezoelectric thick film | |
CN102181833A (en) | Method for epitaxially growing strontium titanate (STO) thin film on gallium arsenide (GaAs) substrate | |
CN105200404B (en) | The preparation method of the potassium-sodium niobate barium zirconate bismuth-sodium titanate lead-free piezoelectric thin film with vertical phase boundary of epitaxial growth | |
CN1295759C (en) | Method of preparing silicon dioxide film by plasma oxidation under oxygen atmosphore | |
CN111525021A (en) | Sodium bismuth titanate-based film with positive and negative electrocaloric effects and preparation method thereof | |
CN109721353A (en) | A kind of preparation method of huge dielectric constant CCTO based film material | |
CN103194798B (en) | Ferromagnetic polycrystal film of a kind of transient metal doped zno-based and preparation method thereof | |
CN102659400A (en) | Method for manufacturing pyrochlore phase bismuth titanate functional films on surfaces of glass substrates | |
CN103227281B (en) | Method of preparing potassium sodium niobate-sodium bismuth titanate unleaded piezoelectric composite thick film with KNN powder in different particle diameters | |
CN102795891B (en) | Preparation method for barium strontium titanate film taking MgO as buffer layer | |
CN109553415B (en) | Preparation method of silicon-doped lead zirconate titanate non-oriented film with high electrothermal effect | |
CN102174697B (en) | Method for growing oxide ferroelectric film on metallic nickel substrate |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |